FR2761629B1 - Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope - Google Patents

Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope

Info

Publication number
FR2761629B1
FR2761629B1 FR9704207A FR9704207A FR2761629B1 FR 2761629 B1 FR2761629 B1 FR 2761629B1 FR 9704207 A FR9704207 A FR 9704207A FR 9704207 A FR9704207 A FR 9704207A FR 2761629 B1 FR2761629 B1 FR 2761629B1
Authority
FR
France
Prior art keywords
silicon oxide
polysilicon
doped silicon
layers
polishing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9704207A
Other languages
English (en)
French (fr)
Other versions
FR2761629A1 (fr
Inventor
Eric Jacquinot
Maurice Rivoire
Catherine Euvrard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Francaise Hoechst Ste
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Francaise Hoechst Ste filed Critical Francaise Hoechst Ste
Priority to FR9704207A priority Critical patent/FR2761629B1/fr
Priority to EP01101577A priority patent/EP1111023B1/fr
Priority to DE69829329T priority patent/DE69829329T2/de
Priority to AT01101577T priority patent/ATE527211T1/de
Priority to EP98400715A priority patent/EP0878838B1/fr
Priority to AT98400715T priority patent/ATE291277T1/de
Priority to US09/054,518 priority patent/US6126518A/en
Priority to MYPI98001512A priority patent/MY119523A/en
Priority to KR10-1998-0012061A priority patent/KR100510951B1/ko
Priority to JP9296598A priority patent/JP4233629B2/ja
Priority to SG1998000701A priority patent/SG77633A1/en
Priority to CNB98109693XA priority patent/CN1152416C/zh
Publication of FR2761629A1 publication Critical patent/FR2761629A1/fr
Application granted granted Critical
Publication of FR2761629B1 publication Critical patent/FR2761629B1/fr
Priority to HK99103450.9A priority patent/HK1018540B/xx
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
FR9704207A 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope Expired - Lifetime FR2761629B1 (fr)

Priority Applications (13)

Application Number Priority Date Filing Date Title
FR9704207A FR2761629B1 (fr) 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope
DE69829329T DE69829329T2 (de) 1997-04-07 1998-03-26 Verfahren zum chemisch-mechanischen Polieren von halbleitenden oder isolierenden Schichten
AT01101577T ATE527211T1 (de) 1997-04-07 1998-03-26 Neutrale wassrige suspension von kolloidalen kieselsäure
EP98400715A EP0878838B1 (fr) 1997-04-07 1998-03-26 Nouveau procédé de polissage mécanochimique de couches de matériaux semiconducteurs ou isolants
AT98400715T ATE291277T1 (de) 1997-04-07 1998-03-26 Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten
EP01101577A EP1111023B1 (fr) 1997-04-07 1998-03-26 Suspension aqueuse neutre de silice colloidale
US09/054,518 US6126518A (en) 1997-04-07 1998-04-03 Chemical mechanical polishing process for layers of semiconductor or isolating materials
MYPI98001512A MY119523A (en) 1997-04-07 1998-04-04 Chemical mechanical polishing process for layers of semiconductor or isolating materials
KR10-1998-0012061A KR100510951B1 (ko) 1997-04-07 1998-04-06 반도체층또는절연재층의신규한화학적기계적연마방법
JP9296598A JP4233629B2 (ja) 1997-04-07 1998-04-06 絶縁材料又は半導体の層のための新規な化学的機械的研磨法
SG1998000701A SG77633A1 (en) 1997-04-07 1998-04-06 New chemical mechanical polishing process for layers of semi-conductors of isolating materials
CNB98109693XA CN1152416C (zh) 1997-04-07 1998-04-07 半导体或绝缘材料层的机械-化学新抛光方法
HK99103450.9A HK1018540B (en) 1997-04-07 1999-08-10 New chemical mechanical polishing process for layers of semiconductor or isolating materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9704207A FR2761629B1 (fr) 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope

Publications (2)

Publication Number Publication Date
FR2761629A1 FR2761629A1 (fr) 1998-10-09
FR2761629B1 true FR2761629B1 (fr) 1999-06-18

Family

ID=9505584

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9704207A Expired - Lifetime FR2761629B1 (fr) 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope

Country Status (10)

Country Link
US (1) US6126518A (enExample)
EP (2) EP0878838B1 (enExample)
JP (1) JP4233629B2 (enExample)
KR (1) KR100510951B1 (enExample)
CN (1) CN1152416C (enExample)
AT (2) ATE527211T1 (enExample)
DE (1) DE69829329T2 (enExample)
FR (1) FR2761629B1 (enExample)
MY (1) MY119523A (enExample)
SG (1) SG77633A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2781922B1 (fr) 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
JP2002050594A (ja) * 2000-08-04 2002-02-15 Fuso Chemical Co Ltd コロイド状シリカスラリー
FR2819245B1 (fr) * 2001-01-09 2004-11-26 Clariant Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
FR2819244B1 (fr) * 2001-01-09 2003-04-11 Clariant France Sa Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
US6939203B2 (en) * 2002-04-18 2005-09-06 Asm Nutool, Inc. Fluid bearing slide assembly for workpiece polishing
EP1362827B1 (en) * 2002-05-16 2008-09-03 Micronit Microfluidics B.V. Method of fabrication of a microfluidic device
US20070286773A1 (en) * 2002-05-16 2007-12-13 Micronit Microfluidics B.V. Microfluidic Device
JP2004165613A (ja) * 2002-06-03 2004-06-10 Shipley Co Llc 電子デバイスの製造
KR101004525B1 (ko) * 2002-08-19 2010-12-31 호야 가부시키가이샤 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
EP2063461A4 (en) * 2006-09-13 2010-06-02 Asahi Glass Co Ltd POLISHING AGENT FOR AN INTEGRATED SEMICONDUCTOR ELEMENTS, POLISHING METHOD AND METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR EQUIPMENT
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
US8540894B2 (en) * 2007-09-28 2013-09-24 Nitta Haas Incorporated Polishing composition
DE102011079694A1 (de) 2011-07-25 2013-01-31 Carl Zeiss Smt Gmbh Verfahren zum Polieren einer Schicht aus amorphem Silizium
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
JP7528681B2 (ja) * 2020-09-29 2024-08-06 住友金属鉱山株式会社 ＳｉＣ多結晶基板の研磨方法
CN113045992A (zh) * 2021-03-23 2021-06-29 广东精坚科技有限公司 一种中性抛光液及其制备方法
CN114744065B (zh) * 2022-03-23 2024-06-14 中国电子科技集团公司第十一研究所 台面结构芯片的非接触式光刻方法

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US35420A (en) * 1862-05-27 And bdwaed joslin
US2744001A (en) * 1950-09-08 1956-05-01 Rare Earths Inc Polishing material and method of making same
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US4435247A (en) * 1983-03-10 1984-03-06 International Business Machines Corporation Method for polishing titanium carbide
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US5575706A (en) * 1996-01-11 1996-11-19 Taiwan Semiconductor Manufacturing Company Ltd. Chemical/mechanical planarization (CMP) apparatus and polish method
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Also Published As

Publication number Publication date
SG77633A1 (en) 2001-01-16
KR100510951B1 (ko) 2005-11-21
EP0878838A2 (fr) 1998-11-18
EP0878838A3 (fr) 1998-12-16
DE69829329D1 (de) 2005-04-21
DE69829329T2 (de) 2006-04-13
KR19980081128A (ko) 1998-11-25
ATE291277T1 (de) 2005-04-15
CN1152416C (zh) 2004-06-02
CN1208248A (zh) 1999-02-17
JP4233629B2 (ja) 2009-03-04
ATE527211T1 (de) 2011-10-15
FR2761629A1 (fr) 1998-10-09
EP1111023A2 (fr) 2001-06-27
HK1018540A1 (en) 1999-12-24
EP1111023A3 (fr) 2008-01-23
EP1111023B1 (fr) 2011-10-05
MY119523A (en) 2005-06-30
JPH10308379A (ja) 1998-11-17
US6126518A (en) 2000-10-03
EP0878838B1 (fr) 2005-03-16

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Owner name: MERCK PATENT GMBH, DE

Effective date: 20150204

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Year of fee payment: 20