JPH10308162A5 - - Google Patents

Info

Publication number
JPH10308162A5
JPH10308162A5 JP1997116965A JP11696597A JPH10308162A5 JP H10308162 A5 JPH10308162 A5 JP H10308162A5 JP 1997116965 A JP1997116965 A JP 1997116965A JP 11696597 A JP11696597 A JP 11696597A JP H10308162 A5 JPH10308162 A5 JP H10308162A5
Authority
JP
Japan
Prior art keywords
layer
gate terminal
forming
seal
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997116965A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10308162A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11696597A priority Critical patent/JPH10308162A/ja
Priority claimed from JP11696597A external-priority patent/JPH10308162A/ja
Priority to US09/072,665 priority patent/US6133678A/en
Priority to TW087106957A priority patent/TW381281B/zh
Priority to FR9805810A priority patent/FR2763173B1/fr
Priority to KR1019980016318A priority patent/KR100281814B1/ko
Publication of JPH10308162A publication Critical patent/JPH10308162A/ja
Publication of JPH10308162A5 publication Critical patent/JPH10308162A5/ja
Pending legal-status Critical Current

Links

JP11696597A 1997-05-07 1997-05-07 電界放出素子 Pending JPH10308162A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11696597A JPH10308162A (ja) 1997-05-07 1997-05-07 電界放出素子
US09/072,665 US6133678A (en) 1997-05-07 1998-05-05 Field emission element
TW087106957A TW381281B (en) 1997-05-07 1998-05-06 Field emission element
FR9805810A FR2763173B1 (fr) 1997-05-07 1998-05-07 Element a emission de champ
KR1019980016318A KR100281814B1 (ko) 1997-05-07 1998-05-07 전계방출소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11696597A JPH10308162A (ja) 1997-05-07 1997-05-07 電界放出素子

Publications (2)

Publication Number Publication Date
JPH10308162A JPH10308162A (ja) 1998-11-17
JPH10308162A5 true JPH10308162A5 (enExample) 2004-10-21

Family

ID=14700139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11696597A Pending JPH10308162A (ja) 1997-05-07 1997-05-07 電界放出素子

Country Status (5)

Country Link
US (1) US6133678A (enExample)
JP (1) JPH10308162A (enExample)
KR (1) KR100281814B1 (enExample)
FR (1) FR2763173B1 (enExample)
TW (1) TW381281B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11111156A (ja) * 1997-10-02 1999-04-23 Futaba Corp 電界放出素子
JP3595718B2 (ja) * 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
US20020036452A1 (en) * 1999-12-21 2002-03-28 Masakazu Muroyama Electron emission device, cold cathode field emission device and method for the production thereof, and cold cathode field emission display and method for the production thereof
EP1225048A1 (en) * 2001-01-18 2002-07-24 Tonejet Corporation Pty Ltd Electrode for a drop-on-demand printer
TW486709B (en) * 2001-02-06 2002-05-11 Au Optronics Corp Field emission display cathode panel with inner via and its manufacturing method
US20020117952A1 (en) * 2001-02-15 2002-08-29 Christopher Chang Field emission display device and method for making the same
US7071603B2 (en) * 2002-02-20 2006-07-04 Cdream Corporation Patterned seed layer suitable for electron-emitting device, and associated fabrication method
US7053538B1 (en) * 2002-02-20 2006-05-30 Cdream Corporation Sectioned resistor layer for a carbon nanotube electron-emitting device
US20040037972A1 (en) * 2002-08-22 2004-02-26 Kang Simon Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
US7175494B1 (en) 2002-08-22 2007-02-13 Cdream Corporation Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device
US6803708B2 (en) * 2002-08-22 2004-10-12 Cdream Display Corporation Barrier metal layer for a carbon nanotube flat panel display
US6984535B2 (en) * 2002-12-20 2006-01-10 Cdream Corporation Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
US20050236963A1 (en) * 2004-04-15 2005-10-27 Kang Sung G Emitter structure with a protected gate electrode for an electron-emitting device
KR101001518B1 (ko) 2004-06-28 2010-12-14 삼성에스디아이 주식회사 프릿을 구비하는 평판표시장치
KR100759414B1 (ko) * 2006-07-31 2007-09-20 삼성에스디아이 주식회사 발광 장치 및 이 발광 장치를 백라이트 유닛으로 사용하는액정 표시장치
JP4831009B2 (ja) * 2007-07-27 2011-12-07 双葉電子工業株式会社 集束型電界放出カソードと電界放出型表示装置
US12034033B2 (en) * 2022-01-25 2024-07-09 Ge Aviation Systems Llc Semiconductor device package and method of forming

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0148284B1 (ko) * 1993-04-26 1998-11-16 호소야 레이지 화상표시 패널용 기밀용기 및 화상표시 패널 및 그 제조방법
JP2766174B2 (ja) * 1993-12-28 1998-06-18 日本電気株式会社 電界放出冷陰極とこれを用いた電子管
FR2717304B1 (fr) * 1994-03-09 1996-04-05 Commissariat Energie Atomique Source d'électrons à cathodes émissives à micropointes.
JP3079352B2 (ja) * 1995-02-10 2000-08-21 双葉電子工業株式会社 ＮｂＮ電極を用いた真空気密素子
JP2852357B2 (ja) * 1995-03-09 1999-02-03 双葉電子工業株式会社 表示装置
JPH08337008A (ja) * 1995-06-09 1996-12-24 Futaba Corp 電界放出型プリントヘッドおよびその駆動方法
JP2874605B2 (ja) * 1995-07-27 1999-03-24 ヤマハ株式会社 電界放出型素子の製造方法
JP2907080B2 (ja) * 1995-09-26 1999-06-21 双葉電子工業株式会社 電界放出型表示装置
JP3171121B2 (ja) * 1996-08-29 2001-05-28 双葉電子工業株式会社 電界放出型表示装置

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