JPH10302469A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH10302469A
JPH10302469A JP9109423A JP10942397A JPH10302469A JP H10302469 A JPH10302469 A JP H10302469A JP 9109423 A JP9109423 A JP 9109423A JP 10942397 A JP10942397 A JP 10942397A JP H10302469 A JPH10302469 A JP H10302469A
Authority
JP
Japan
Prior art keywords
bit line
memory cell
potential
transfer gate
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9109423A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10302469A5 (enExample
Inventor
Satoshi Eto
聡 江渡
Masato Matsumiya
正人 松宮
Hideki Kano
英樹 加納
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9109423A priority Critical patent/JPH10302469A/ja
Priority to US08/946,586 priority patent/US6169701B1/en
Publication of JPH10302469A publication Critical patent/JPH10302469A/ja
Publication of JPH10302469A5 publication Critical patent/JPH10302469A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Dram (AREA)
JP9109423A 1997-04-25 1997-04-25 半導体記憶装置 Pending JPH10302469A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9109423A JPH10302469A (ja) 1997-04-25 1997-04-25 半導体記憶装置
US08/946,586 US6169701B1 (en) 1997-04-25 1997-10-07 Semiconductor memory device using shared sense amplifier system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9109423A JPH10302469A (ja) 1997-04-25 1997-04-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH10302469A true JPH10302469A (ja) 1998-11-13
JPH10302469A5 JPH10302469A5 (enExample) 2004-12-24

Family

ID=14509877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9109423A Pending JPH10302469A (ja) 1997-04-25 1997-04-25 半導体記憶装置

Country Status (2)

Country Link
US (1) US6169701B1 (enExample)
JP (1) JPH10302469A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008269785A (ja) * 2008-07-04 2008-11-06 Renesas Technology Corp 半導体記憶装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414899B2 (en) * 2000-02-02 2002-07-02 Broadcom Corporation Limited swing driver circuit
US6603712B2 (en) 2000-02-02 2003-08-05 Broadcom Corporation High precision delay measurement circuit
US6492844B2 (en) 2000-02-02 2002-12-10 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6417697B2 (en) 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6724681B2 (en) 2000-02-02 2004-04-20 Broadcom Corporation Asynchronously-resettable decoder with redundancy
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6611465B2 (en) * 2000-02-02 2003-08-26 Broadcom Corporation Diffusion replica delay circuit
US7173867B2 (en) * 2001-02-02 2007-02-06 Broadcom Corporation Memory redundancy circuit techniques
US6535025B2 (en) 2000-02-02 2003-03-18 Broadcom Corp. Sense amplifier with offset cancellation and charge-share limited swing drivers
US6937538B2 (en) * 2000-02-02 2005-08-30 Broadcom Corporation Asynchronously resettable decoder for a semiconductor memory
US6745354B2 (en) 2000-02-02 2004-06-01 Broadcom Corporation Memory redundancy implementation
US6411557B2 (en) * 2000-02-02 2002-06-25 Broadcom Corporation Memory architecture with single-port cell and dual-port (read and write) functionality
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
DE10107314C2 (de) * 2001-02-16 2003-03-27 Infineon Technologies Ag Verfahren zum Lesen einer Speicherzelle eines Halbleiterspeichers und Halbleiterspeicher
US6757202B2 (en) * 2002-08-29 2004-06-29 Micron Technology, Inc. Bias sensing in DRAM sense amplifiers
KR100555522B1 (ko) * 2003-10-29 2006-03-03 삼성전자주식회사 부스트 기입 동작을 수반하는 메모리 셀 데이터 기입 방법및 그 메모리 장치
JP2009032315A (ja) * 2007-07-25 2009-02-12 Oki Electric Ind Co Ltd 半導体記憶装置
FR2951575B1 (fr) * 2009-10-20 2011-12-16 St Microelectronics Rousset Amplificateur de lecture ayant des moyens de precharge de bitline rapides

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945693A (ja) * 1982-09-09 1984-03-14 Nec Corp メモリ回路
JPH04298885A (ja) * 1991-03-28 1992-10-22 Toshiba Corp ダイナミック型半導体記憶装置
JPH06162764A (ja) * 1992-11-17 1994-06-10 Toshiba Corp 半導体記憶装置
JPH07182860A (ja) * 1993-11-09 1995-07-21 Samsung Electron Co Ltd 半導体メモリ装置のワード線駆動回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04186593A (ja) * 1990-11-21 1992-07-03 Mitsubishi Electric Corp 半導体記憶装置
JPH08171796A (ja) * 1994-12-16 1996-07-02 Toshiba Corp 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945693A (ja) * 1982-09-09 1984-03-14 Nec Corp メモリ回路
JPH04298885A (ja) * 1991-03-28 1992-10-22 Toshiba Corp ダイナミック型半導体記憶装置
JPH06162764A (ja) * 1992-11-17 1994-06-10 Toshiba Corp 半導体記憶装置
JPH07182860A (ja) * 1993-11-09 1995-07-21 Samsung Electron Co Ltd 半導体メモリ装置のワード線駆動回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008269785A (ja) * 2008-07-04 2008-11-06 Renesas Technology Corp 半導体記憶装置

Also Published As

Publication number Publication date
US6169701B1 (en) 2001-01-02

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