JPH10261838A5 - - Google Patents

Info

Publication number
JPH10261838A5
JPH10261838A5 JP1997065725A JP6572597A JPH10261838A5 JP H10261838 A5 JPH10261838 A5 JP H10261838A5 JP 1997065725 A JP1997065725 A JP 1997065725A JP 6572597 A JP6572597 A JP 6572597A JP H10261838 A5 JPH10261838 A5 JP H10261838A5
Authority
JP
Japan
Prior art keywords
quantum well
layer
layers
semiconductor laser
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997065725A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10261838A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP6572597A priority Critical patent/JPH10261838A/ja
Priority claimed from JP6572597A external-priority patent/JPH10261838A/ja
Priority to US09/380,537 priority patent/US6377597B1/en
Priority to PCT/JP1998/000828 priority patent/WO1998039827A1/ja
Priority to DE69834415T priority patent/DE69834415T2/de
Priority to EP98905700A priority patent/EP1022825B1/en
Priority to KR10-1999-7008066A priority patent/KR100447367B1/ko
Publication of JPH10261838A publication Critical patent/JPH10261838A/ja
Priority to US10/050,078 priority patent/US6956882B2/en
Publication of JPH10261838A5 publication Critical patent/JPH10261838A5/ja
Priority to US11/128,217 priority patent/US7183569B2/en
Pending legal-status Critical Current

Links

JP6572597A 1997-03-07 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置 Pending JPH10261838A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP6572597A JPH10261838A (ja) 1997-03-19 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置
KR10-1999-7008066A KR100447367B1 (ko) 1997-03-07 1998-02-27 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치
EP98905700A EP1022825B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
PCT/JP1998/000828 WO1998039827A1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
DE69834415T DE69834415T2 (de) 1997-03-07 1998-02-27 Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung
US09/380,537 US6377597B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
US10/050,078 US6956882B2 (en) 1997-03-07 2002-01-17 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
US11/128,217 US7183569B2 (en) 1997-03-07 2005-05-13 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6572597A JPH10261838A (ja) 1997-03-19 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置

Publications (2)

Publication Number Publication Date
JPH10261838A JPH10261838A (ja) 1998-09-29
JPH10261838A5 true JPH10261838A5 (enExample) 2005-02-10

Family

ID=13295294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6572597A Pending JPH10261838A (ja) 1997-03-07 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置

Country Status (1)

Country Link
JP (1) JPH10261838A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690700B2 (en) 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP4854829B2 (ja) * 1999-11-22 2012-01-18 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2002094189A (ja) 2000-09-14 2002-03-29 Sharp Corp 窒化物半導体レーザ素子およびそれを用いた光学装置
JP4678805B2 (ja) * 2001-02-14 2011-04-27 シャープ株式会社 半導体発光装置およびその製造方法
JP4756784B2 (ja) * 2001-07-16 2011-08-24 シャープ株式会社 窒化物半導体レーザ素子とその製造方法
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
JP2005039140A (ja) * 2003-07-18 2005-02-10 Sharp Corp 酸化物半導体レーザ素子
JP2006270028A (ja) 2005-02-25 2006-10-05 Mitsubishi Electric Corp 半導体発光素子
JP4541318B2 (ja) * 2005-04-27 2010-09-08 パナソニック株式会社 窒化物半導体発光・受光素子
WO2007026767A1 (ja) * 2005-08-31 2007-03-08 Kyoto University 発光素子及びその製造方法
JP2007110090A (ja) 2005-09-13 2007-04-26 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
JP4872450B2 (ja) * 2006-05-12 2012-02-08 日立電線株式会社 窒化物半導体発光素子
JP2008078311A (ja) 2006-09-20 2008-04-03 Toshiba Corp 窒化物系半導体レーザ装置
KR101423721B1 (ko) * 2007-10-09 2014-07-31 서울바이오시스 주식회사 나노 패턴들을 갖는 레이저 다이오드 및 그것을 제조하는방법
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP2010206063A (ja) * 2009-03-05 2010-09-16 Sony Corp ＧａＮ系半導体発光素子の駆動方法、画像表示装置におけるＧａＮ系半導体発光素子の駆動方法、面状光源装置の駆動方法、及び、発光装置の駆動方法
JP2012243780A (ja) * 2011-05-13 2012-12-10 Toshiba Corp 半導体発光素子及びウェーハ
JP5522147B2 (ja) * 2011-11-02 2014-06-18 住友電気工業株式会社 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法

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