JP2008177624A5 - - Google Patents
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- Publication number
- JP2008177624A5 JP2008177624A5 JP2008104869A JP2008104869A JP2008177624A5 JP 2008177624 A5 JP2008177624 A5 JP 2008177624A5 JP 2008104869 A JP2008104869 A JP 2008104869A JP 2008104869 A JP2008104869 A JP 2008104869A JP 2008177624 A5 JP2008177624 A5 JP 2008177624A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- quantum well
- semiconductor laser
- gallium nitride
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002601 GaN Inorganic materials 0.000 claims description 100
- 239000004065 semiconductor Substances 0.000 claims description 91
- 238000005253 cladding Methods 0.000 claims description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 28
- 230000010355 oscillation Effects 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 24
- 239000013078 crystal Substances 0.000 description 19
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- 239000002994 raw material Substances 0.000 description 18
- 230000008020 evaporation Effects 0.000 description 14
- 238000001704 evaporation Methods 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008104869A JP2008177624A (ja) | 2008-04-14 | 2008-04-14 | 窒化ガリウム系半導体レーザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008104869A JP2008177624A (ja) | 2008-04-14 | 2008-04-14 | 窒化ガリウム系半導体レーザ素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05259697A Division JP4365898B2 (ja) | 1997-03-07 | 1997-03-07 | 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008177624A JP2008177624A (ja) | 2008-07-31 |
| JP2008177624A5 true JP2008177624A5 (enExample) | 2009-09-24 |
Family
ID=39704349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008104869A Pending JP2008177624A (ja) | 2008-04-14 | 2008-04-14 | 窒化ガリウム系半導体レーザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008177624A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010123920A (ja) * | 2008-10-20 | 2010-06-03 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法 |
| JP5255106B2 (ja) | 2011-10-24 | 2013-08-07 | 住友電気工業株式会社 | 窒化物半導体発光素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111558A (ja) * | 1994-10-07 | 1996-04-30 | Hitachi Ltd | 半導体レーザ素子 |
| JP3373975B2 (ja) * | 1995-05-24 | 2003-02-04 | 三洋電機株式会社 | 半導体発光素子 |
-
2008
- 2008-04-14 JP JP2008104869A patent/JP2008177624A/ja active Pending
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