JPH10256657A5 - - Google Patents

Info

Publication number
JPH10256657A5
JPH10256657A5 JP1997052596A JP5259697A JPH10256657A5 JP H10256657 A5 JPH10256657 A5 JP H10256657A5 JP 1997052596 A JP1997052596 A JP 1997052596A JP 5259697 A JP5259697 A JP 5259697A JP H10256657 A5 JPH10256657 A5 JP H10256657A5
Authority
JP
Japan
Prior art keywords
quantum well
layer
gallium nitride
layers
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997052596A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10256657A (ja
JP4365898B2 (ja
Filing date
Publication date
Priority claimed from JP05259697A external-priority patent/JP4365898B2/ja
Priority to JP05259697A priority Critical patent/JP4365898B2/ja
Application filed filed Critical
Priority to KR10-1999-7008066A priority patent/KR100447367B1/ko
Priority to EP98905700A priority patent/EP1022825B1/en
Priority to PCT/JP1998/000828 priority patent/WO1998039827A1/ja
Priority to DE69834415T priority patent/DE69834415T2/de
Priority to US09/380,537 priority patent/US6377597B1/en
Publication of JPH10256657A publication Critical patent/JPH10256657A/ja
Priority to US10/050,078 priority patent/US6956882B2/en
Publication of JPH10256657A5 publication Critical patent/JPH10256657A5/ja
Priority to US11/128,217 priority patent/US7183569B2/en
Publication of JP4365898B2 publication Critical patent/JP4365898B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP05259697A 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 Expired - Fee Related JP4365898B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP05259697A JP4365898B2 (ja) 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置
KR10-1999-7008066A KR100447367B1 (ko) 1997-03-07 1998-02-27 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치
EP98905700A EP1022825B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
PCT/JP1998/000828 WO1998039827A1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
DE69834415T DE69834415T2 (de) 1997-03-07 1998-02-27 Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung
US09/380,537 US6377597B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
US10/050,078 US6956882B2 (en) 1997-03-07 2002-01-17 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
US11/128,217 US7183569B2 (en) 1997-03-07 2005-05-13 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05259697A JP4365898B2 (ja) 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008104869A Division JP2008177624A (ja) 2008-04-14 2008-04-14 窒化ガリウム系半導体レーザ素子

Publications (3)

Publication Number Publication Date
JPH10256657A JPH10256657A (ja) 1998-09-25
JPH10256657A5 true JPH10256657A5 (enExample) 2005-02-10
JP4365898B2 JP4365898B2 (ja) 2009-11-18

Family

ID=12919176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05259697A Expired - Fee Related JP4365898B2 (ja) 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置

Country Status (1)

Country Link
JP (1) JP4365898B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286448A (ja) 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2002094189A (ja) * 2000-09-14 2002-03-29 Sharp Corp 窒化物半導体レーザ素子およびそれを用いた光学装置
JP2006270028A (ja) * 2005-02-25 2006-10-05 Mitsubishi Electric Corp 半導体発光素子
JP2007110090A (ja) 2005-09-13 2007-04-26 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
JP2008078311A (ja) 2006-09-20 2008-04-03 Toshiba Corp 窒化物系半導体レーザ装置
CN101904064A (zh) 2007-12-19 2010-12-01 罗姆股份有限公司 半导体发光元件
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置

Similar Documents

Publication Publication Date Title
EP1022825B1 (en) Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
JP3653169B2 (ja) 窒化ガリウム系半導体レーザ素子
US6614824B2 (en) Nitride semiconductor laser device and optical device using the same
JPH11340580A (ja) 半導体レーザ、半導体発光素子、及び、その製造方法
JPH10261838A5 (enExample)
Nakamura First III–V-nitride-based violet laser diodes
US6617607B2 (en) Nitride semiconductor laser device and optical pickup apparatus therewith
JPH1065271A (ja) 窒化ガリウム系半導体光発光素子
JPH10261838A (ja) 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置
US7622749B2 (en) Semiconductor light-emitting element and method for fabricating the same
JP2000208875A (ja) 多重量子井戸構造半導体発光素子
JP4365898B2 (ja) 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置
JP3880683B2 (ja) 窒化ガリウム系半導体発光素子の製造方法
JPH10256657A5 (enExample)
JP3933637B2 (ja) 窒化ガリウム系半導体レーザ素子
JP3655066B2 (ja) 窒化ガリウム系化合物半導体レーザ及びその製造方法
JPH11340573A (ja) 窒化ガリウム系半導体レーザ素子
JPH10303505A (ja) 窒化ガリウム系半導体発光素子およびその製造方法
Kimura et al. Room-temperature pulsed operation of GaN-based laser diodes on a-face sapphire substrate grown by low-pressure metalorganic chemical vapor deposition
JPH08264907A (ja) 半導体発光素子
JP2008177624A5 (enExample)
JP2008177624A (ja) 窒化ガリウム系半導体レーザ素子
JPH1117277A (ja) 窒化物系半導体レーザ装置およびその製造方法
JP2001102690A (ja) 窒化物系半導体レーザ装置
JP3963632B2 (ja) 半導体光デバイス装置