JP4365898B2 - 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 - Google Patents

窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 Download PDF

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Publication number
JP4365898B2
JP4365898B2 JP05259697A JP5259697A JP4365898B2 JP 4365898 B2 JP4365898 B2 JP 4365898B2 JP 05259697 A JP05259697 A JP 05259697A JP 5259697 A JP5259697 A JP 5259697A JP 4365898 B2 JP4365898 B2 JP 4365898B2
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Japan
Prior art keywords
layer
quantum well
semiconductor laser
gallium nitride
type
Prior art date
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Expired - Fee Related
Application number
JP05259697A
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English (en)
Japanese (ja)
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JPH10256657A (ja
JPH10256657A5 (enExample
Inventor
敏之 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
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Sharp Corp
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Publication date
Priority to JP05259697A priority Critical patent/JP4365898B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to DE69834415T priority patent/DE69834415T2/de
Priority to KR10-1999-7008066A priority patent/KR100447367B1/ko
Priority to EP98905700A priority patent/EP1022825B1/en
Priority to PCT/JP1998/000828 priority patent/WO1998039827A1/ja
Priority to US09/380,537 priority patent/US6377597B1/en
Publication of JPH10256657A publication Critical patent/JPH10256657A/ja
Priority to US10/050,078 priority patent/US6956882B2/en
Publication of JPH10256657A5 publication Critical patent/JPH10256657A5/ja
Priority to US11/128,217 priority patent/US7183569B2/en
Application granted granted Critical
Publication of JP4365898B2 publication Critical patent/JP4365898B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP05259697A 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 Expired - Fee Related JP4365898B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP05259697A JP4365898B2 (ja) 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置
KR10-1999-7008066A KR100447367B1 (ko) 1997-03-07 1998-02-27 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치
EP98905700A EP1022825B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
PCT/JP1998/000828 WO1998039827A1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
DE69834415T DE69834415T2 (de) 1997-03-07 1998-02-27 Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung
US09/380,537 US6377597B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
US10/050,078 US6956882B2 (en) 1997-03-07 2002-01-17 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
US11/128,217 US7183569B2 (en) 1997-03-07 2005-05-13 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05259697A JP4365898B2 (ja) 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008104869A Division JP2008177624A (ja) 2008-04-14 2008-04-14 窒化ガリウム系半導体レーザ素子

Publications (3)

Publication Number Publication Date
JPH10256657A JPH10256657A (ja) 1998-09-25
JPH10256657A5 JPH10256657A5 (enExample) 2005-02-10
JP4365898B2 true JP4365898B2 (ja) 2009-11-18

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Family Applications (1)

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JP05259697A Expired - Fee Related JP4365898B2 (ja) 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置

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JP (1) JP4365898B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286448A (ja) 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2002094189A (ja) * 2000-09-14 2002-03-29 Sharp Corp 窒化物半導体レーザ素子およびそれを用いた光学装置
JP2006270028A (ja) * 2005-02-25 2006-10-05 Mitsubishi Electric Corp 半導体発光素子
JP2007110090A (ja) 2005-09-13 2007-04-26 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
JP2008078311A (ja) 2006-09-20 2008-04-03 Toshiba Corp 窒化物系半導体レーザ装置
CN101904064A (zh) 2007-12-19 2010-12-01 罗姆股份有限公司 半导体发光元件
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置

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JPH10256657A (ja) 1998-09-25

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