JP2008177624A - 窒化ガリウム系半導体レーザ素子 - Google Patents

窒化ガリウム系半導体レーザ素子 Download PDF

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Publication number
JP2008177624A
JP2008177624A JP2008104869A JP2008104869A JP2008177624A JP 2008177624 A JP2008177624 A JP 2008177624A JP 2008104869 A JP2008104869 A JP 2008104869A JP 2008104869 A JP2008104869 A JP 2008104869A JP 2008177624 A JP2008177624 A JP 2008177624A
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Japan
Prior art keywords
layer
quantum well
semiconductor laser
gan
gallium nitride
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JP2008104869A
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Japanese (ja)
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JP2008177624A5 (enExample
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Toshiyuki Okumura
敏之 奥村
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Sharp Corp
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Sharp Corp
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JP2008104869A 2008-04-14 2008-04-14 窒化ガリウム系半導体レーザ素子 Pending JP2008177624A (ja)

Priority Applications (1)

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JP2008104869A JP2008177624A (ja) 2008-04-14 2008-04-14 窒化ガリウム系半導体レーザ素子

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JP2008104869A JP2008177624A (ja) 2008-04-14 2008-04-14 窒化ガリウム系半導体レーザ素子

Related Parent Applications (1)

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JP05259697A Division JP4365898B2 (ja) 1997-03-07 1997-03-07 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置

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JP2008177624A true JP2008177624A (ja) 2008-07-31
JP2008177624A5 JP2008177624A5 (enExample) 2009-09-24

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JP2008104869A Pending JP2008177624A (ja) 2008-04-14 2008-04-14 窒化ガリウム系半導体レーザ素子

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047297A1 (ja) * 2008-10-20 2010-04-29 住友電気工業株式会社 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
WO2013061651A1 (ja) 2011-10-24 2013-05-02 住友電気工業株式会社 窒化物半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111558A (ja) * 1994-10-07 1996-04-30 Hitachi Ltd 半導体レーザ素子
JPH08316585A (ja) * 1995-05-24 1996-11-29 Sanyo Electric Co Ltd 半導体発光素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111558A (ja) * 1994-10-07 1996-04-30 Hitachi Ltd 半導体レーザ素子
JPH08316585A (ja) * 1995-05-24 1996-11-29 Sanyo Electric Co Ltd 半導体発光素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047297A1 (ja) * 2008-10-20 2010-04-29 住友電気工業株式会社 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
JP2010123920A (ja) * 2008-10-20 2010-06-03 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
WO2013061651A1 (ja) 2011-10-24 2013-05-02 住友電気工業株式会社 窒化物半導体発光素子
US8731016B2 (en) 2011-10-24 2014-05-20 Sumitomo Electric Industries, Ltd. Nitride semiconductor light emitting device

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