JPH10261838A - 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置 - Google Patents

窒化ガリウム系半導体発光素子及び半導体レーザ光源装置

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Publication number
JPH10261838A
JPH10261838A JP6572597A JP6572597A JPH10261838A JP H10261838 A JPH10261838 A JP H10261838A JP 6572597 A JP6572597 A JP 6572597A JP 6572597 A JP6572597 A JP 6572597A JP H10261838 A JPH10261838 A JP H10261838A
Authority
JP
Japan
Prior art keywords
quantum well
layer
layers
semiconductor laser
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6572597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10261838A5 (enExample
Inventor
Toshiyuki Okumura
敏之 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6572597A priority Critical patent/JPH10261838A/ja
Priority to KR10-1999-7008066A priority patent/KR100447367B1/ko
Priority to EP98905700A priority patent/EP1022825B1/en
Priority to PCT/JP1998/000828 priority patent/WO1998039827A1/ja
Priority to DE69834415T priority patent/DE69834415T2/de
Priority to US09/380,537 priority patent/US6377597B1/en
Publication of JPH10261838A publication Critical patent/JPH10261838A/ja
Priority to US10/050,078 priority patent/US6956882B2/en
Publication of JPH10261838A5 publication Critical patent/JPH10261838A5/ja
Priority to US11/128,217 priority patent/US7183569B2/en
Pending legal-status Critical Current

Links

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP6572597A 1997-03-07 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置 Pending JPH10261838A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP6572597A JPH10261838A (ja) 1997-03-19 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置
KR10-1999-7008066A KR100447367B1 (ko) 1997-03-07 1998-02-27 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치
EP98905700A EP1022825B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
PCT/JP1998/000828 WO1998039827A1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
DE69834415T DE69834415T2 (de) 1997-03-07 1998-02-27 Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung
US09/380,537 US6377597B1 (en) 1997-03-07 1998-02-27 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device
US10/050,078 US6956882B2 (en) 1997-03-07 2002-01-17 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
US11/128,217 US7183569B2 (en) 1997-03-07 2005-05-13 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6572597A JPH10261838A (ja) 1997-03-19 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置

Publications (2)

Publication Number Publication Date
JPH10261838A true JPH10261838A (ja) 1998-09-29
JPH10261838A5 JPH10261838A5 (enExample) 2005-02-10

Family

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Family Applications (1)

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JP6572597A Pending JPH10261838A (ja) 1997-03-07 1997-03-19 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置

Country Status (1)

Country Link
JP (1) JPH10261838A (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148546A (ja) * 1999-11-22 2001-05-29 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2002246686A (ja) * 2001-02-14 2002-08-30 Sharp Corp 半導体発光装置およびその製造方法
JP2003031898A (ja) * 2001-07-16 2003-01-31 Sharp Corp 窒化物半導体レーザ素子とその製造方法
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
US6614824B2 (en) 2000-09-14 2003-09-02 Sharp Kabushiki Kaisha Nitride semiconductor laser device and optical device using the same
US6690700B2 (en) 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP2005039140A (ja) * 2003-07-18 2005-02-10 Sharp Corp 酸化物半導体レーザ素子
JP2006332611A (ja) * 2005-04-27 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体素子
WO2007026767A1 (ja) * 2005-08-31 2007-03-08 Kyoto University 発光素子及びその製造方法
JP2007305851A (ja) * 2006-05-12 2007-11-22 Hitachi Cable Ltd 窒化物半導体発光素子
US7522645B2 (en) 2006-09-20 2009-04-21 Kabushiki Kaisha Toshiba Nitride-based semiconductor laser device
US7756177B2 (en) 2005-02-25 2010-07-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor light-emitting device
JP2010206063A (ja) * 2009-03-05 2010-09-16 Sony Corp ＧａＮ系半導体発光素子の駆動方法、画像表示装置におけるＧａＮ系半導体発光素子の駆動方法、面状光源装置の駆動方法、及び、発光装置の駆動方法
US8168986B2 (en) 2008-04-14 2012-05-01 Sony Corporation GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus
US8168966B2 (en) 2005-09-13 2012-05-01 Sony Corporation GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
JP2012243780A (ja) * 2011-05-13 2012-12-10 Toshiba Corp 半導体発光素子及びウェーハ
WO2013065381A1 (ja) * 2011-11-02 2013-05-10 住友電気工業株式会社 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法
EP2048754B1 (en) * 2007-10-09 2015-09-09 Seoul Viosys Co., Ltd Laser diode having nano patterns and method of fabricating the same

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690700B2 (en) 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP2001148546A (ja) * 1999-11-22 2001-05-29 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
US6614824B2 (en) 2000-09-14 2003-09-02 Sharp Kabushiki Kaisha Nitride semiconductor laser device and optical device using the same
JP2002246686A (ja) * 2001-02-14 2002-08-30 Sharp Corp 半導体発光装置およびその製造方法
JP2003031898A (ja) * 2001-07-16 2003-01-31 Sharp Corp 窒化物半導体レーザ素子とその製造方法
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
JP2005039140A (ja) * 2003-07-18 2005-02-10 Sharp Corp 酸化物半導体レーザ素子
US7756177B2 (en) 2005-02-25 2010-07-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor light-emitting device
JP2006332611A (ja) * 2005-04-27 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体素子
WO2007026767A1 (ja) * 2005-08-31 2007-03-08 Kyoto University 発光素子及びその製造方法
US8168966B2 (en) 2005-09-13 2012-05-01 Sony Corporation GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
JP2007305851A (ja) * 2006-05-12 2007-11-22 Hitachi Cable Ltd 窒化物半導体発光素子
US7522645B2 (en) 2006-09-20 2009-04-21 Kabushiki Kaisha Toshiba Nitride-based semiconductor laser device
EP2048754B1 (en) * 2007-10-09 2015-09-09 Seoul Viosys Co., Ltd Laser diode having nano patterns and method of fabricating the same
US8168986B2 (en) 2008-04-14 2012-05-01 Sony Corporation GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus
JP2010206063A (ja) * 2009-03-05 2010-09-16 Sony Corp ＧａＮ系半導体発光素子の駆動方法、画像表示装置におけるＧａＮ系半導体発光素子の駆動方法、面状光源装置の駆動方法、及び、発光装置の駆動方法
US8553740B2 (en) 2009-03-05 2013-10-08 Sony Corporation Method of driving GaN-based semiconductor light emitting element, method of driving GaN-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device
JP2012243780A (ja) * 2011-05-13 2012-12-10 Toshiba Corp 半導体発光素子及びウェーハ
US9142717B2 (en) 2011-05-13 2015-09-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device and wafer
WO2013065381A1 (ja) * 2011-11-02 2013-05-10 住友電気工業株式会社 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法
JP2013098429A (ja) * 2011-11-02 2013-05-20 Sumitomo Electric Ind Ltd 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法

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