JPH10256243A - 薄膜、薄膜形成方法及び装置 - Google Patents

薄膜、薄膜形成方法及び装置

Info

Publication number
JPH10256243A
JPH10256243A JP9062996A JP6299697A JPH10256243A JP H10256243 A JPH10256243 A JP H10256243A JP 9062996 A JP9062996 A JP 9062996A JP 6299697 A JP6299697 A JP 6299697A JP H10256243 A JPH10256243 A JP H10256243A
Authority
JP
Japan
Prior art keywords
film
high frequency
layer
thin film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9062996A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10256243A5 (https=
Inventor
Naoki Suzuki
直樹 鈴木
Kazuyuki Sawada
和幸 澤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9062996A priority Critical patent/JPH10256243A/ja
Publication of JPH10256243A publication Critical patent/JPH10256243A/ja
Publication of JPH10256243A5 publication Critical patent/JPH10256243A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP9062996A 1997-03-17 1997-03-17 薄膜、薄膜形成方法及び装置 Pending JPH10256243A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9062996A JPH10256243A (ja) 1997-03-17 1997-03-17 薄膜、薄膜形成方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9062996A JPH10256243A (ja) 1997-03-17 1997-03-17 薄膜、薄膜形成方法及び装置

Publications (2)

Publication Number Publication Date
JPH10256243A true JPH10256243A (ja) 1998-09-25
JPH10256243A5 JPH10256243A5 (https=) 2005-02-17

Family

ID=13216505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9062996A Pending JPH10256243A (ja) 1997-03-17 1997-03-17 薄膜、薄膜形成方法及び装置

Country Status (1)

Country Link
JP (1) JPH10256243A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015151151A1 (ja) * 2014-03-31 2015-10-08 Ｓｐｐテクノロジーズ株式会社 加熱装置、及びこれを備えたプラズマ処理装置
JP2018133477A (ja) * 2017-02-16 2018-08-23 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015151151A1 (ja) * 2014-03-31 2015-10-08 Ｓｐｐテクノロジーズ株式会社 加熱装置、及びこれを備えたプラズマ処理装置
JP2018133477A (ja) * 2017-02-16 2018-08-23 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Similar Documents

Publication Publication Date Title
JP3135198B2 (ja) プラズマ励起ｃｖｄによるシリコンオキシナイトライド膜の堆積方法
CN100577865C (zh) 为介质cvd膜实现晶片间厚度均匀性的高功率介质干燥
JP4066332B2 (ja) シリコンカーバイド膜の製造方法
CN107104036B (zh) 用于在沟槽侧壁或平整表面上选择性形成氮化硅膜的方法
JPH0684888A (ja) 絶縁膜の形成方法
US20180148833A1 (en) Methods for depositing flowable silicon containing films using hot wire chemical vapor deposition
JPH07142416A (ja) 改良された界面を有する層のプラズマ化学蒸着法
JP3406250B2 (ja) 窒化珪素系膜の成膜方法
JP3112880B2 (ja) Ｃｖｄ装置のクリーニング方法
JPH05315268A (ja) プラズマｃｖｄ装置
JPH10256243A (ja) 薄膜、薄膜形成方法及び装置
JP3224548B2 (ja) タングステンシリサイド膜の堆積時応力を最小にする装置および方法
CN118910591A (zh) 一种形成保护膜的方法、保护膜及半导体工艺设备
JPH0745610A (ja) 半導体装置の製造方法
JPH03237715A (ja) エッチング方法
JP3243816B2 (ja) 絶縁膜の形成方法
JP2000332012A (ja) シリコン窒化膜の成膜方法
JPH09326387A (ja) 薄膜形成方法及びその装置
JP3230185B2 (ja) 均一誘電層の沈積法
JPH08339992A (ja) 薄膜形成装置および薄膜形成方法
JPS6052578A (ja) 窒化シリコン膜の形成方法
JPH09223672A (ja) プラズマ処理方法及び装置
JPH07235530A (ja) 絶縁膜の形成方法
JPH02102534A (ja) 半導体装置の形成方法
JPS6262529A (ja) 窒化シリコン膜の作成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040310

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041214

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050412