JPH10223873A5 - - Google Patents

Info

Publication number
JPH10223873A5
JPH10223873A5 JP1997026928A JP2692897A JPH10223873A5 JP H10223873 A5 JPH10223873 A5 JP H10223873A5 JP 1997026928 A JP1997026928 A JP 1997026928A JP 2692897 A JP2692897 A JP 2692897A JP H10223873 A5 JPH10223873 A5 JP H10223873A5
Authority
JP
Japan
Prior art keywords
substrate
silicon
electrode
pads
conductive bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997026928A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10223873A (ja
JP3678526B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP02692897A priority Critical patent/JP3678526B2/ja
Priority claimed from JP02692897A external-priority patent/JP3678526B2/ja
Publication of JPH10223873A publication Critical patent/JPH10223873A/ja
Publication of JPH10223873A5 publication Critical patent/JPH10223873A5/ja
Application granted granted Critical
Publication of JP3678526B2 publication Critical patent/JP3678526B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP02692897A 1997-02-10 1997-02-10 半導体装置 Expired - Lifetime JP3678526B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02692897A JP3678526B2 (ja) 1997-02-10 1997-02-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02692897A JP3678526B2 (ja) 1997-02-10 1997-02-10 半導体装置

Publications (3)

Publication Number Publication Date
JPH10223873A JPH10223873A (ja) 1998-08-21
JPH10223873A5 true JPH10223873A5 (enExample) 2004-11-18
JP3678526B2 JP3678526B2 (ja) 2005-08-03

Family

ID=12206841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02692897A Expired - Lifetime JP3678526B2 (ja) 1997-02-10 1997-02-10 半導体装置

Country Status (1)

Country Link
JP (1) JP3678526B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4317280B2 (ja) * 1998-11-02 2009-08-19 浜松ホトニクス株式会社 半導体エネルギー検出器
JP4562875B2 (ja) * 2000-07-17 2010-10-13 浜松ホトニクス株式会社 半導体装置
JP4606610B2 (ja) * 2001-01-26 2011-01-05 浜松ホトニクス株式会社 裏面照射型半導体装置及び充填材充填方法
CN100477239C (zh) * 2002-08-09 2009-04-08 浜松光子学株式会社 光电二极管阵列和放射线检测器
WO2004047178A1 (ja) * 2002-11-18 2004-06-03 Hamamatsu Photonics K.K. 裏面入射型ホトダイオードアレイ、その製造方法及び半導体装置
US7810740B2 (en) 2002-11-18 2010-10-12 Hamamatsu Photonics K.K. Back illuminated photodiode array, manufacturing method and semiconductor device thereof
JP4220817B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
JP4499385B2 (ja) * 2003-07-29 2010-07-07 浜松ホトニクス株式会社 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法
JP4641820B2 (ja) 2005-02-17 2011-03-02 三洋電機株式会社 半導体装置の製造方法
KR101793316B1 (ko) * 2011-03-16 2017-11-02 케이엘에이-텐코 코포레이션 박막 스펙트럼 순도 필터 코팅을 갖는 영상 센서를 사용하는 ｅｕｖ 화학선 레티클 검사 시스템
JP6803137B2 (ja) * 2015-09-30 2020-12-23 浜松ホトニクス株式会社 裏面入射型固体撮像素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651323B2 (ja) * 1992-07-22 1997-09-10 浜松ホトニクス株式会社 半導体エネルギー検出器
JP3290703B2 (ja) * 1992-07-22 2002-06-10 浜松ホトニクス株式会社 半導体エネルギー検出器の製造方法
JPH06350068A (ja) * 1993-06-03 1994-12-22 Hamamatsu Photonics Kk 半導体エネルギー線検出器の製造方法

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