JP3678526B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP3678526B2
JP3678526B2 JP02692897A JP2692897A JP3678526B2 JP 3678526 B2 JP3678526 B2 JP 3678526B2 JP 02692897 A JP02692897 A JP 02692897A JP 2692897 A JP2692897 A JP 2692897A JP 3678526 B2 JP3678526 B2 JP 3678526B2
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
thinned portion
semiconductor substrate
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP02692897A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10223873A (ja
JPH10223873A5 (enExample
Inventor
勝己 柴山
雅治 村松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP02692897A priority Critical patent/JP3678526B2/ja
Publication of JPH10223873A publication Critical patent/JPH10223873A/ja
Publication of JPH10223873A5 publication Critical patent/JPH10223873A5/ja
Application granted granted Critical
Publication of JP3678526B2 publication Critical patent/JP3678526B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP02692897A 1997-02-10 1997-02-10 半導体装置 Expired - Lifetime JP3678526B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02692897A JP3678526B2 (ja) 1997-02-10 1997-02-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02692897A JP3678526B2 (ja) 1997-02-10 1997-02-10 半導体装置

Publications (3)

Publication Number Publication Date
JPH10223873A JPH10223873A (ja) 1998-08-21
JPH10223873A5 JPH10223873A5 (enExample) 2004-11-18
JP3678526B2 true JP3678526B2 (ja) 2005-08-03

Family

ID=12206841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02692897A Expired - Lifetime JP3678526B2 (ja) 1997-02-10 1997-02-10 半導体装置

Country Status (1)

Country Link
JP (1) JP3678526B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138365A (ja) * 1998-11-02 2000-05-16 Hamamatsu Photonics Kk 半導体エネルギー検出器

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4562875B2 (ja) * 2000-07-17 2010-10-13 浜松ホトニクス株式会社 半導体装置
JP4606610B2 (ja) * 2001-01-26 2011-01-05 浜松ホトニクス株式会社 裏面照射型半導体装置及び充填材充填方法
WO2004019411A1 (ja) * 2002-08-09 2004-03-04 Hamamatsu Photonics K.K. フォトダイオードアレイ、その製造方法、及び放射線検出器
CN100446261C (zh) * 2002-11-18 2008-12-24 浜松光子学株式会社 背面入射型光电二极管阵列、其制造方法以及半导体装置
US7810740B2 (en) 2002-11-18 2010-10-12 Hamamatsu Photonics K.K. Back illuminated photodiode array, manufacturing method and semiconductor device thereof
JP4220817B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
JP4499385B2 (ja) * 2003-07-29 2010-07-07 浜松ホトニクス株式会社 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法
JP4641820B2 (ja) 2005-02-17 2011-03-02 三洋電機株式会社 半導体装置の製造方法
WO2012125647A2 (en) * 2011-03-16 2012-09-20 Kla-Tencor Corporation Euv actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating
JP6803137B2 (ja) * 2015-09-30 2020-12-23 浜松ホトニクス株式会社 裏面入射型固体撮像素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3290703B2 (ja) * 1992-07-22 2002-06-10 浜松ホトニクス株式会社 半導体エネルギー検出器の製造方法
JP2651323B2 (ja) * 1992-07-22 1997-09-10 浜松ホトニクス株式会社 半導体エネルギー検出器
JPH06350068A (ja) * 1993-06-03 1994-12-22 Hamamatsu Photonics Kk 半導体エネルギー線検出器の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138365A (ja) * 1998-11-02 2000-05-16 Hamamatsu Photonics Kk 半導体エネルギー検出器

Also Published As

Publication number Publication date
JPH10223873A (ja) 1998-08-21

Similar Documents

Publication Publication Date Title
TWI353045B (enExample)
KR101180815B1 (ko) 반도체 패키지 및 그 제조 방법
US7556975B2 (en) Method for manufacturing backside-illuminated optical sensor
US6077723A (en) Method for fabricating a multi chip module with alignment member
JP3678526B2 (ja) 半導体装置
JP3767398B2 (ja) 半導体装置およびその製造方法
JP5430245B2 (ja) 機械電気変換素子及び機械電気変換装置の製造方法
US20030102777A1 (en) Ultrasonic transducer and method of manufacturing the same
JP2013518432A (ja) Ｉｃダイ又はウエハをｔｓｖウエハに接合するためのデュアルキャリア
JPH04303946A (ja) 半導体装置
JP2821062B2 (ja) 半導体エネルギー検出器の製造方法
JP4482455B2 (ja) 裏面入射型ホトダイオードアレイ、その製造方法及び半導体装置
CN108428662A (zh) 在芯片制造期间处置薄晶片
US20220315413A1 (en) Sensing device and method for manufacturing sensing device
JP4020367B2 (ja) 半導体装置の製造方法
JP5197219B2 (ja) 半導体装置およびその製造方法
JP2011501126A (ja) 半導体マイクロアネモメータ装置およびファブリケーション方法
CN102132409A (zh) 半导体装置及其制造方法
US20050189474A1 (en) Semiconductor relay apparatus and wiring board fabrication method
CN100440520C (zh) 半导体装置及其制造方法
JPH09260581A (ja) 複合半導体装置の製造方法
JP3343071B2 (ja) 撮像素子の実装方法
JPH09246325A (ja) 半導体素子の実装構造及びその製造方法
CN111211140B (zh) 一种固态图像拾取装置及其制造方法
CN119856086A (zh) 改进的光源集成

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20041201

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050125

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20050317

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050325

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050419

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050510

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080520

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090520

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100520

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110520

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110520

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120520

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130520

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130520

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140520

Year of fee payment: 9

EXPY Cancellation because of completion of term