JPH10178070A - Adhesive composition for semiconductor device and adhesive sheet for semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reflow resistance and thermal cycle property by forming an adhesive composition for forming an adhesive layer with an epoxy resin, a thermoplastic resin, and a thermosetting type adhesive containing aluminum hydroxide. SOLUTION: An adhesive layer 23 is composed of an epoxy resin, a thermoplastic resin, and a thermocuring type adhesive composition containing aluminum hydroxide. Any epoxy resin containing at least two epoxy groups in one molecule may be used. A copolymer with butadiene as an essential copolymerization constituent is preferable as a thermoplastic resin. Aluminum hydroxide is not especially limited in terms of a grain size and resin. Aluminum hydroxide is not especially limited in terms of a grain size and a shape but one of 1μm or less grain size is preferably used, and the amount of blend is preferably 2-40wt.% in the adhesive composition. A coating obtained by dissolving the adhesive composition in a solvent is applied onto a polyester film with a mold release property and is dried to obtain the adhesive layer 23. Then, a protection film 24 with a weak release force is laminated to obtain an adhesive sheet for semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive composition and an adhesive sheet constituting a substrate (interposer) for connecting a semiconductor integrated circuit (IC) used for mounting and packaging the semiconductor integrated circuit (IC). . More specifically, a wiring board layer composed of an insulating layer and a conductor pattern constituting a substrate for connecting a semiconductor integrated circuit used in a ball grid array (BGA) and land grid array (LGA) type surface mounting package, and a metal reinforcing plate, for example. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive composition which adheres between layers on which a conductor pattern such as (stiffener) or the like is not formed, and is excellent in reliability such as solder heat resistance and thermal cyclability, and an adhesive sheet for a semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor integrated circuit (IC) package, a dual in-line package (DIP),
Package forms such as a small outline package (SOP) and a quad flat package (QFP) have been used. However, with the increase in the number of pins of the IC and the miniaturization of the package, the limit of the QFP having the largest number of pins is approaching its limit. This is due to the difficulty in handling due to the narrow pitch between external terminals (leads) and the difficulty in obtaining solder printing accuracy on the printed board, particularly when mounting on a printed board. Therefore, in recent years, a BGA method, an LGA method, a PGA method and the like have been put to practical use as means for increasing the number of pins and reducing the size. Above all, the BGA method has attracted a great deal of attention not only because it can be reduced in cost, weight and thickness by using a plastic material, but also because it can be surface-mounted.

FIG. 1 shows an example of the BGA system. The BGA method is characterized in that solder balls almost corresponding to the number of pins of an IC are provided in a grid (area array) as external connection terminals of a semiconductor integrated circuit connection board to which the IC is connected.
The connection to the printed board is performed by batch reflow in which the solder ball surface is placed so as to match the conductor pattern of the printed board on which the solder is already printed, and the solder is melted by reflow. The feature of the package is that the connection terminals are arranged on the back surface of the package, compared to the conventional IC package in which the connection terminals are arranged around the QFP.
The reason is that more connection terminals can be arranged in a small space at a wide interval. For this reason, on the mounting surface, it is possible to reduce the mounting area and increase the mounting efficiency.

[0004] A chip scale package (CSP) is one that has further advanced this function, and is called a micro BGA because of its similarity. The present invention relates to these BGs.
The present invention can be applied to a CSP having an A structure.

On the other hand, the BGA package has the following problems. (A) Flatness of the solder ball surface, (b) reflow resistance, (c) heat dissipation, and (c) thermal cycle properties.

As a method of improving these, a method of laminating a material such as a metal plate for reinforcement (maintaining flatness), heat radiation, and electromagnetic shielding on a substrate for connecting a semiconductor integrated circuit is generally used. . This is particularly important when a TAB tape or a flexible substrate shown in FIG. 3 is used for an insulating layer for connecting an IC and a wiring board layer including a conductor pattern.

Therefore, the substrate for connecting a semiconductor integrated circuit is
As illustrated in FIG. 2, a wiring board layer including an insulator layer 11 and a conductor pattern 13 for connecting an IC, a reinforcing plate (stiffener), a heat sink (heat spreader),
Layer 1 on which no conductor pattern such as a shield plate is formed
5, and at least one adhesive layer 14 for laminating them. These semiconductor integrated circuit connection substrates are preliminarily prepared by laminating or applying and drying an adhesive composition in a semi-cured state on either a wiring substrate layer or a layer on which no conductor is formed, and then assembling the package. Lamination in the process,
It is made by heat curing.

Finally, the adhesive layer 14 remains inside the package. From the above points, the properties required for the adhesive layer 14 include (a) reflow resistance, and (b) stress absorption occurring between different materials such as a wiring board layer and a reinforcing plate during a temperature cycle or reflow. Low stress), (c) easy workability,
(D) Insulation when laminated on wirings, and the like.

Among them, important requirements are reflow resistance and thermal cycle resistance.

[0010] The reflow resistance is determined by a mounting method in which the entire package is heated to a high temperature of 210 to 270 ° C, such as immersion in a solder bath, heating with a saturated vapor of an inert gas (a vapor phase method), or infrared reflow. It peels off and reduces the reliability of the package. It is said that the peeling in the reflow process is caused by the explosion of water that has been absorbed between the curing of the adhesive layer and the mounting process explosively turning into steam during heating. A method has been used in which a package that has been completely dried and stored in a sealed container is shipped.

The thermal cycle resistance is a characteristic required for a package having a large number of pins, such as a BGA, because the temperature of the package is higher than 100 ° C. during operation. In order to alleviate this, a low elastic modulus is required.

For these reasons, various improvements in adhesives have been studied. For example, as an adhesive layer having excellent thermal cycle resistance, a thermoplastic resin or a silicone elastomer having a low elastic modulus (Japanese Patent Publication No. 6-50448).
And so on.

[0013]

However, the method of enclosing a dry package in a container has disadvantages in that the manufacturing process and the handling of the product are complicated, and the product price is extremely high.

Further, although the adhesives proposed variously have excellent thermal cycle resistance, they do not satisfy the reflow resistance.

SUMMARY OF THE INVENTION An object of the present invention is to solve the problems arising in the reflow process, to provide a highly reliable adhesive composition for a semiconductor device having excellent reflow resistance and thermal cycling properties, and to a semiconductor device using the same. An object of the present invention is to provide an adhesive sheet.

[0016]

That is, the present invention provides a wiring board comprising an insulator layer and a conductor pattern, a semiconductor integrated circuit substrate having at least one or more layers each having no conductor pattern and an adhesive layer. An adhesive composition for a semiconductor integrated circuit forming an adhesive layer, wherein the adhesive composition contains an epoxy resin (A), a thermoplastic resin (B), and aluminum hydroxide (C). An adhesive composition for a semiconductor device, and an adhesive sheet for a semiconductor device using the same.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail.

It is important that the adhesive layer in the present invention is composed of a thermosetting adhesive composition containing an epoxy resin (A), a thermoplastic resin (B) and aluminum hydroxide (C). .

In the present invention, the epoxy resin (A) is
It is not particularly limited as long as it has two or more epoxy groups in one molecule, and specific examples thereof include, for example, a cresol novolak type epoxy resin, a phenol novolak type epoxy resin, the following formulas (I), (II), and ( III),
Epoxy resins represented by (IV) and (V),

Embedded image (Wherein, R ₁ to R ₁₀ each show a hydrogen atom, C1 -C4 lower alkyl group or a halogen atom.)

Embedded image (However, R _{1 to} R ₈ each represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)

Embedded image (However, two of R _{1 to} R ₈ are 2,3-epoxypropoxy groups, and the rest each represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)

Embedded image (Wherein, R ₁ to R ₄ each show a hydrogen atom, C1 -C4 lower alkyl group or a halogen atom.)

Embedded image (However, R _{1 to} R ₄ each represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.) Linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy Resins and halogenated epoxy resins.

Among these epoxy resins (A), those particularly preferably used in the present invention are those having the above formulas (I), (II),
An epoxy resin represented by (III), (IV) or (V). And, the epoxy resin (A) is prepared by using the above formula (I), (II), (III), (IV) or (V)
20% by weight or more of epoxy resin having a skeleton represented by
It is preferred that the content be 0% by weight or more.

In the epoxy resin represented by the above formula (I), preferred examples of R _{1 to} R ₁₀ include a hydrogen atom, a methyl group, an ethyl group, a sec-butyl group, a t-butyl group, a chlorine atom, And a bromine atom. Preferred specific examples of the epoxy resin represented by the above formula (I) include bisphenol A epoxy resin, bisphenol F epoxy resin, brominated bisphenol A epoxy resin, and brominated bisphenol F epoxy resin.

In the epoxy resin represented by the formula (II), preferred examples of R _{1 to} R ₈ include a hydrogen atom, a methyl group, an ethyl group, a sec-butyl group, a t-butyl group, a chlorine atom, And a bromine atom. Preferred specific examples of the epoxy resin represented by the above formula (II) include 4,4′-bis (2,3-epoxypropoxy).
Biphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy)-
3,3 ', 5,5'-tetramethyl-2-chlorobiphenyl, 4,4'-bis (2,3-epoxypropoxy)
-3,3 ', 5,5'-tetramethyl-2-bromobiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3', 5,5'-tetraethylbiphenyl,
4,4′-bis (2,3-epoxypropoxy) -3,
3 ', 5,5'-tetrabutylbiphenyl and the like.

In the epoxy resin represented by the formula (III), preferred examples of R _{1 to} R ₈ include a hydrogen atom, a methyl group, an ethyl group, a sec-butyl group, a t-butyl group, a chlorine atom, And a bromine atom. Preferred specific examples of the epoxy resin represented by the above formula (III) include 1,5-bis (2,3-epoxypropoxy)
Naphthalene, 1,5-bis (2,3-epoxypropoxy) -7-methylnaphthalene, 1,6-bis (2,3-
Epoxypropoxy) naphthalene, 1,6-bis (2,
3-epoxypropoxy) -2-methylnaphthalene,
1,6-bis (2,3-epoxypropoxy) -8-methylnaphthalene, 1,6-bis (2,3-epoxypropoxy) -4,8-dimethylnaphthalene, 1,6-bis (2,3- Epoxypropoxy) -2-bromonaphthalene, 1,6-bis (2,3-epoxypropoxy) -8
-Bromonaphthalene and the like.

In the epoxy resin represented by the above formula (IV), preferred examples of R _{1 to} R ₄ include a hydrogen atom, a methyl group, an ethyl group, a sec-butyl group, a t-butyl group, a chlorine atom, And a bromine atom. A preferred specific example of the epoxy resin represented by the above formula (IV) is EXA-7200 (Dainippon Ink Chemical Industry Co., Ltd.)
And ZX-1257 (manufactured by Toto Kasei Co., Ltd.).

In the epoxy resin represented by the above formula (V), preferred specific examples of R _{1 to} R ₄ include a hydrogen atom,
Examples include a methyl group, an ethyl group, a sec-butyl group, a t-butyl group, a chlorine atom and a bromine atom. Preferred specific examples of the epoxy resin represented by the above formula (V) include terpene diphenol diglycidyl ether (manufactured by Yuka Shell Epoxy Co., Ltd.).

In the present invention, the amount of the epoxy resin (A) is 5 to 90% by weight, preferably 10 to 90% by weight in the adhesive composition.
７０70% by weight, more preferably 20-60% by weight.

The thermoplastic resin (B) of the present invention is not particularly limited as long as it gives flexibility to the adhesive layer. Specific examples thereof include acrylonitrile-butadiene copolymer (NBR) and acrylonitrile- Butadiene rubber
Styrene resin (ABS), polybutadiene, styrene
Butadiene-ethylene resin (SEBS), acrylic, polyvinyl butyral, polyamide, polyethylene, polyester, polyimide, polyamide imide, polyurethane and the like. Further, these thermoplastic resins preferably have a functional group capable of reacting with the epoxy resin (A) in order to improve heat resistance. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group.

Among them, a copolymer containing butadiene as an essential copolymer component is preferably used in terms of adhesiveness, flexibility and thermal stress relaxation. Particularly, acrylonitrile-butadiene copolymer (N
BR), styrene-butadiene-ethylene resin (SEB)
S), styrene-butadiene resin (SBS) and the like are preferred. Further, a copolymer having butadiene as an essential copolymer component and having a carboxyl group is preferably used, and specific examples thereof include NBR having a carboxyl group (NBR-C).
And SEBS having a carboxyl group (SEBS-
C).

The aluminum hydroxide (C) of the present invention is not particularly limited in terms of particle size and shape.
It is 0 μm or less, preferably 10 μm or less, and more preferably 1 μm or less.

The amount of aluminum hydroxide (C) is 1 to 70% by weight, preferably 2 to 50% by weight, more preferably 2 to 40% by weight in the adhesive composition.

In the present invention, by adding a phenol resin (D) to the adhesive layer, reflow resistance and insulation reliability can be further improved. Specific examples of the phenol resin (D) include, for example, a phenol novolak resin, a cresol novolak resin, a bisphenol A type resin, various resole resins, and the like.

The mixing ratio of the phenol resin is usually 0.5 to 1 phenolic hydroxyl group per equivalent of epoxy resin.
It is desirably in the range of 0.0 equivalent, preferably 0.7 to 7.0 equivalent.

The adhesive layer of the present invention contains a curing accelerator which promotes a single reaction of the epoxy resin (A) or a reaction between the epoxy resin (A) and the thermoplastic resin (B) or the phenol resin (D). Can be. The curing accelerator is not particularly limited as long as it accelerates the curing reaction, and specific examples thereof include:
For example, 2-methylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-methylimidazole,
Imidazole compounds such as 2-phenylimidazole, 2-phenyl-4-methylimidazole and 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine,
-(Dimethylaminomethyl) phenol, 2,4,6-
Tris (dimethylaminomethyl) phenol and 1,
Tertiary amine compounds such as 8-diazabicyclo (5,4,0) undecene-7, zirconium tetramethoxide,
Organometallic compounds such as zirconium tetrapropoxide, tetrakis (acetylacetonato) zirconium and tri (acetylacetonato) aluminum; and triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine and tri Organic phosphine compounds such as (nonylphenyl) phosphine are exemplified.

Two or more of these curing accelerators may be used in combination depending on the application. The amount of the curing accelerator ranges from 0.1 to 10 parts by weight based on 100 parts by weight of the epoxy resin (A). preferable.

The adhesive sheet for a semiconductor device of the present invention is
The adhesive composition for a semiconductor device of the present invention is used as an adhesive layer, and has at least one or more peelable protective film layers. For example, a two-layer configuration of a protective film / adhesive layer or a three-layer configuration of a protective film / adhesive layer / protective film corresponds to this. The thickness of the adhesive layer is 10 μm or more, preferably 30 μm or more, and more preferably 50 μm or more from the viewpoint of stress relaxation and handling.

The term "protective film layer" as used herein means that an adhesive layer is applied to a wiring board layer (such as a TAB tape) composed of an insulator layer and a conductor pattern or a layer (a stiffener, a heat spreader, etc.) where no conductor pattern is formed. It is not particularly limited as long as it can be peeled without impairing the form and function of the adhesive layer before being combined, and specific examples thereof include polyester, polyolefin, polyphenylene sulfide, polyvinyl chloride, polytetrafluoroethylene, polyvinyl fluoride, and polyvinylbutyral. Plastic films of polyvinyl acetate, polyvinyl alcohol, polycarbonate, polyamide, polyimide, polymethyl methacrylate, etc., and films coated with a release agent such as silicone or fluorine compound, etc. Paper laminated with Irumu, paper and the like impregnated or coated release properties of certain resins. The thickness of the protective film is 2 in terms of heat resistance.
It is at least 0 μm, preferably at least 25 μm, more preferably at least 35 μm.

When protective film layers are provided on both sides of the adhesive layer, when the peeling force of each protective film layer with respect to the adhesive layer is F1, F2 (F1> F2), F1-
F2 is preferably at least 5 N / m, more preferably 10 N / m.
N / m or more is required.

When F1-F2 is smaller than 5 N / m,
It is not stable which release film side the release surface is on,
It is not preferable because it causes a problem in use. Also, the peeling force F
1 and F2 are both 1 to 200 N / m, preferably 3 to 200 N / m.
It is 150 N / m, more preferably 3 to 100 N / m. If it is lower than 1 N / m, the protective film will fall off. If it exceeds 200 N / m, peeling becomes difficult, which is not preferable.

Next, a method of manufacturing an adhesive sheet for a semiconductor device will be described. A coating material in which the adhesive composition of the present invention is dissolved in a solvent is applied on a polyester film having releasability and dried. The thickness of the adhesive layer is 10 to 100 μm
It is preferable to apply so that Drying condition is 1
00 to 200 ° C for 1 to 5 minutes. Solvents are not particularly limited, but aromatic solvents such as toluene, xylene, and chlorobenzene; ketones such as methyl ethyl ketone and methyl ethyl isobutyl ketone; aprotic polar solvents such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidine alone or as a mixture; Is preferred.

An adhesive sheet of the present invention is obtained by further laminating a polyester or polyolefin-based protective film having a weak release force and releasability on the coated and dried adhesive layer. FIG. 4 shows the configuration of the adhesive sheet of the present invention. 23 is an adhesive layer, and 24 is a protective sheet. In order to further increase the thickness of the adhesive, the adhesive sheet may be laminated a plurality of times. In some cases, after lamination, the degree of curing may be adjusted by aging, for example, at 40 to 100 ° C. for about 1 to 200 hours.

[0041]

The present invention will be described more specifically with reference to the following examples.

Examples 1 to 6 and Comparative Examples 1 and 2 The following thermoplastic resins, epoxy resins and other additives were blended so as to have the composition ratios shown in Table 1, respectively.
The mixture was stirred and dissolved in a DMF / monochlorobenzene / MIBK mixed solvent at 40 ° C. so as to have a concentration of 28% by weight to prepare an adhesive solution.

A. Epoxy resin I. Bisphenol A type epoxy resin (epoxy equivalent:
186) II. 4,4'-bis (2,3-epoxypropoxy)
-3,3 ', 5,5'-Tetramethylbiphenyl (epoxy equivalent: 195) C. Thermoplastic resin SEBS-C (MX-073, manufactured by Asahi Kasei Corporation) Aluminum hydroxide I. Average particle size: 25 μm aluminum hydroxide II. Average particle size: 18 μm aluminum hydroxide III. Average particle size: 8 μm aluminum hydroxide IV. A. Average particle size: 1 μm aluminum hydroxide Additive 4,4'-diaminodiphenyl sulfone

These adhesive solutions were applied to a 25 μm-thick silicated polyethylene terephthalate film I with a bar coater to a dry thickness of about 50 μm, and dried at 100 ° C., 1 minute and 150 ° C. for 5 minutes. Then, an adhesive sheet was prepared. On the other hand, an adhesive solution was similarly applied to a polyethylene terephthalate film II having a lower peeling force than polyethylene terephthalate I so as to have a thickness of about 50 μm, and then dried. A 100 μm adhesive sheet was prepared.

The adhesive strength of this sheet was measured, this sheet was affixed to a semiconductor connection substrate, and the reflow resistance and thermal cycle resistance were measured. The measuring method was as follows. Table 1 shows the results.

[Adhesion] Polyimide film (75 μm)
m: An adhesive sheet was laminated on “Upilex 75S” manufactured by Ube Industries, Ltd. at 40 ° C. and 1 MPa. Then, 130 μm of SUS304 having a thickness of 25 μm was applied to the surface of the adhesive sheet laminated on the polyimide film.
After further laminating under the conditions of 1 ° C. and 1 MPa, a heat treatment was sequentially performed in an air oven at 100 ° C. for 1 hour, at 150 ° C. for 1 hour, and an evaluation sample was prepared. After slitting the polyimide film to a width of 5 mm, the polyimide film having a width of 5 mm was peeled off at a speed of 50 mm / min in a 90 ° direction, and the adhesive force at that time was measured.

[Reflow Resistance] An adhesive sheet having a thickness of 50 μm was placed on a 30 mm square semiconductor connection substrate on which a simulated pattern having a conductor width of 100 μm and a distance between conductors of 100 μm was formed.
After laminating under the conditions of 0 ° C. and 1 MPa, 30 mm × 0.25 mm thick SUS304 was placed on the adhesive sheet for 15 minutes.
Crimping was performed under the conditions of 0 ° C. and 75 MPa. Then 150
The composition was cured at 2 ° C. for 2 hours to prepare a sample for evaluating reflow resistance. 85 ° C / 85 for 30mm □ samples
% RH, and then absorbed for 48 hours. 24
The sample was subjected to an IR reflow at 5 ° C. for 10 seconds, and the peeled state was observed with an ultrasonic short wound machine.

[Thermal Cycle Property] Ten 30 mm square samples prepared by the same method as the sample for evaluating reflow resistance were subjected to a cycle treatment at -65 ° C. to 150 ° C. and a minimum and maximum temperature of 30 minutes each. Internal peeling was observed using an ultrasonic flaw detector.

[0049]

[Table 1]

As is clear from the results shown in Table 1, the adhesive composition for a semiconductor device obtained according to the present invention has high adhesive strength and excellent reflow resistance and thermal cycle properties. On the other hand, the comparative example not using the thermosetting adhesive of the present invention has not only low adhesiveness but also poor reflow resistance.

[0051]

According to the present invention, a thermosetting adhesive composition for a semiconductor device having excellent reflow resistance and thermal cycling properties and an adhesive sheet for a semiconductor device using the same can be industrially put into practical use. Could be provided. Further, the reliability of the semiconductor device for surface mounting could be improved by the adhesive composition for a semiconductor device of the present invention.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of one embodiment of a BGA semiconductor device.

FIG. 2 is a schematic cross-sectional view of one embodiment of a semiconductor integrated circuit connection substrate before connection of the semiconductor integrated circuit.

FIG. 3 is a schematic perspective view of one embodiment of a pattern tape (TAB tape) constituting a substrate for connecting a semiconductor integrated circuit.

FIG. 4 is a schematic cross-sectional view of one embodiment of the adhesive sheet for a semiconductor device of the present invention.

[Explanation of symbols]

1. 1. Semiconductor integrated circuit Gold bumps 3,11,17. Flexible insulating film 4,12,18. Adhesive layer constituting wiring board layer 5, 13, 21. Conductors for connecting semiconductor integrated circuits 6, 14, 23. Adhesive layer composed of adhesive composition of the present invention 7,15. Layer in which no conductor pattern is formed 8,16. Solder resist 9. Solder ball 10. Sealing resin 19. Sprocket hole 20. Device hole 22. Conductor part for solder ball connection 24. Protective film layer constituting the adhesive sheet of the present invention

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Claims (9)

[Claims] A semiconductor integrated circuit for forming an adhesive layer of a substrate for a semiconductor integrated circuit having at least one layer of a wiring board comprising an insulator layer and a conductor pattern, a layer on which no conductor pattern is formed, and an adhesive layer. Adhesive composition for use, wherein the adhesive composition is a thermosetting adhesive containing an epoxy resin (A), a thermoplastic resin (B), and aluminum hydroxide (C). Adhesive composition for semiconductor devices. 2. An aluminum hydroxide (C) having an average particle size of 2
The adhesive composition for a semiconductor device according to claim 1, wherein the thickness is 0 µm or less. 3. An aluminum hydroxide (C) having an average particle size of 1
The adhesive composition for a semiconductor device according to claim 1, wherein the thickness is 0 µm or less. 4. An aluminum hydroxide (C) having an average particle size of 1
The adhesive composition for a semiconductor device according to claim 1, wherein the thickness is not more than μm. 5. The content of aluminum hydroxide (C) is 2 to 5.
The adhesive composition for a semiconductor device according to claim 1, wherein the content is 40% by weight. 6. The adhesive composition for a semiconductor device according to claim 1, wherein the thermoplastic resin (B) contains a thermoplastic resin (B ′) containing butadiene as an essential copolymerization component. 7. The adhesive composition for a semiconductor device according to claim 1, wherein the thermoplastic resin (B) is a thermoplastic resin (B ″) containing butadiene as an essential copolymer component and having a carboxyl group. Stuff. 8. An adhesive sheet for a semiconductor device, comprising the adhesive composition for a semiconductor device according to claim 1 as an adhesive layer and having at least one or more peelable protective film layers. 9. It has a protective film layer on both sides of the adhesive layer,
When the peeling force of each protective film layer with respect to the adhesive layer is F1, F2 (F1> F2), F1-F2 ≧ 5.
The adhesive sheet for a semiconductor device according to claim 8, wherein the adhesive sheet has a ratio of N / m.