JP2007266394A - Adhesive sheet for semiconductor, substrate for connecting semiconductor using the same, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive sheet for a semiconductor and a substrate for connecting the semiconductor capable of achieving a semiconductor device with an antistatic effect as well as high reliability. <P>SOLUTION: The adhesive sheet for a semiconductor has an adhesive layer of two layers or more on at least one surface of a protective film layer thereof. The surface resistivity of at least one layer of the adhesive layer is 1×10<SP>10</SP>to 1×10<SP>12</SP>Ω/sq. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor adhesive sheet. More specifically, tape automated bonding (TAB) pattern processing tape, semiconductor grid connection substrates such as ball grid array (BGA) package interposers, lead frame fixing tape, which are used when mounting semiconductor integrated circuits, Adhesives between electronic components such as LOC fixing tapes and semiconductor elements and supporting members such as lead frames and insulating support substrates, that is, die bonding materials, heat spreaders, reinforcing plates, adhesives for shielding materials, solder resists, anisotropic conductive films The present invention relates to an adhesive sheet suitable for producing a copper-clad laminate, a coverlay, etc., a semiconductor connection substrate, and a semiconductor device.

  A method using a metal lead frame is most often used for mounting a semiconductor integrated circuit (IC). In recent years, a conductive pattern for IC connection is formed on an organic insulating film such as glass epoxy or polyimide. An increasing number of systems are provided via a semiconductor connection substrate called an interposer. As a package form, a package form such as a dual in-line package (DIP), a small outline package (SOP), a quad flat package (QFP) has been used. However, with the increase in the number of pins of ICs and the miniaturization of packages, the QFP that can increase the number of pins is approaching the limit. Therefore, BGA (ball grid array) and CSP (chip scale package) in which connection terminals are arranged on the back surface of the package have been used.

  Examples of the connection method for the semiconductor connection substrate include a tape automated bonding (TAB) method, a wire bonding method, and a flip chip method.

  A TAB adhesive-attached tape can be used for the semiconductor connection substrate. The TAB method is naturally advantageous for the connection method having the inner leads, but the BGA method is particularly suitable for the process of laminating the copper foil after mechanically punching the holes for solder balls and the device holes for IC. Is suitable. On the other hand, for wire bonding and flip chip connection without inner leads, it is possible to use not only TAB adhesive tape but also copper-clad laminates that have already been laminated with copper foil and heat-cured adhesive. is there.

  FIG. 1 shows an example of a BGA type semiconductor device. The BGA system is characterized by having solder balls 6 on the grid (grid array) corresponding to the number of pins of the IC as an external connection portion of the semiconductor integrated circuit connection substrate to which the IC 1 is connected. Connection to the printed circuit board is performed by placing the solder ball surface so as to coincide with the conductor pattern 4 of the printed circuit board on which the solder is already printed, and melting the solder by reflow. The greatest feature is that since the surface of the interposer can be used, many terminals can be arranged in a small space as compared with a package such as QFP that can use only the peripheral side. A chip scale package (CSP) is a further advancement of this miniaturization function. Micro BGA (μ-BGA), fine pitch BGA (FPBGA), memory BGA (m-BGA), board on chip (BOC), etc. The structure is proposed. The μ-BGA is characterized in that a beam lead is taken out from the interposer and connected to the IC. In the m-BGA, BOC (FIG. 1), and FP-BGA, the IC and the interposer are connected by wire bonding. The wire bonding connection is difficult to cope with a fine pitch, but does not require complicated beam lead processing and can use a conventional wire bonder for a lead frame, which is advantageous in terms of cost. An adhesive, that is, a die bonding material is also used for bonding the IC having the above structure and the interposer.

  Furthermore, the semiconductor connection board is also laminated with components such as a reinforcing plate (stiffener) for imparting rigidity and flatness or a heat radiating plate (heat spreader) for radiating heat. An adhesive is used.

As electronic devices become smaller and more dense, these adhesives often end up in the package, so they satisfy various properties such as adhesiveness, heat resistance, and thermal cycleability. Is required. As an adhesive sheet for semiconductors satisfying these conditions, the tensile modulus change rate after the sheeted adhesive composition was heat-cured at 170 ° C. for 2 hours and further allowed to stand at 150 ° C. for 250 hours was 100% or less. Some adhesive compositions for semiconductor devices have been proposed (see, for example, Patent Document 1).
JP 2002-249754 A

  Also, since the IC chip is destroyed by static electricity called charging current generated when the IC and the interposer are bonded together or when the package is transferred after mounting the IC chip, it is important to remove this charging current. It has become. As a countermeasure, in the production process of semiconductor devices, for example, static electricity generation devices such as ionizers are used to suppress the generation of static electricity in the surrounding environment, but sufficient antistatic effects cannot be obtained and productivity is not sufficient. Absent. An object of the present invention is to solve such problems, and to provide an adhesive sheet for a semiconductor and a semiconductor connection substrate that can obtain a semiconductor device having an antistatic effect and excellent in reliability.

That is, the present invention is an adhesive sheet for a semiconductor having two or more adhesive layers on at least one side of a protective film layer, and the surface resistivity of at least one layer of the adhesive layer is 1 × 10 ¹⁰ to 1 ×. A semiconductor adhesive sheet characterized by 10 ¹² Ω / □, and a semiconductor connection substrate and a semiconductor device using the same.

  Since the adhesive sheet for semiconductor of the present invention has an antistatic effect while maintaining insulation, it can be used to provide a semiconductor device with excellent reliability.

  The adhesive sheet for semiconductor in the present invention (hereinafter referred to as adhesive sheet) is a TAB pattern processing tape used when mounting a semiconductor integrated circuit for a stiffener, a heat spreader, a semiconductor element, or a wiring board (interposer). , BGA package interposers and other semiconductor connection substrates, lead frame fixing tapes, LOC fixing tapes, adhesives between electronic components such as semiconductor elements and support members such as lead frames and insulating support substrates, die bonding materials, heat spreaders The shape and material of these adherends are not particularly limited, although they are preferably used for producing reinforcing plates, adhesives for shielding materials, solder resists and the like.

The adhesive sheet in the present invention has two or more adhesive layers on at least one surface of the protective film layer, and the surface resistivity of at least one layer of the adhesive layer is 1 × 10 ¹⁰ to 1 × 10 ¹² Ω /. It is characterized by □. If the surface resistivity of all the adhesive layers exceeds 1 × 10 ¹² Ω / □, a sufficient antistatic effect cannot be obtained. On the other hand, when the surface resistivity of all the adhesive layers is less than 1 × 10 ¹⁰ Ω / □, sufficient insulation cannot be obtained in the adhesive layers. In addition, the surface resistivity in this invention is measured by the method according to the insulation resistance of the copper clad laminated board test method 7.2 surface layer for JISC-6471 flexible printed wiring boards.

It is preferable to have an adhesive layer (hereinafter referred to as an adhesive layer (A)) having a surface resistivity of 1 × 10 ¹⁰ to 1 × 10 ¹² Ω / □ in at least one outermost layer of the adhesive layer. By having the adhesive layer (A) as the outermost layer, an antistatic effect of the adherend is easily obtained.

In the present invention, the adhesive layer may be composed only of (A), but in addition to the adhesive layer (A), the adhesive layer (B) having a surface resistivity of 1 × 10 ¹⁴ Ω / □ or more. ). By providing the adhesive layer (B), the insulating property becomes better.

  The adhesive layer (A) preferably contains a conductive filler. Conductive fillers include metal powders such as gold, silver, copper, nickel, aluminum and stainless steel, metal oxides such as zinc oxide and tin oxide, and metal oxides doped with different metals such as aluminum and gallium, carbon black, ceramic , Nickel, aluminum and the like coated with silver. Among these, zinc oxide, tin oxide, zinc oxide doped with a different metal, and tin oxide doped with a different metal are preferable from the viewpoints of stable conductive characteristics and material stability. These may be contained alone or in combination.

  The average particle size of the conductive filler is preferably 0.3 to 20 μm, and more preferably 2 μm or less. Since the content of the conductive filler depends on the type and the degree to which the peeling charge is lowered, it cannot be determined unconditionally, but is preferably 10 with respect to 100 parts by weight of the composition other than the conductive filler constituting the adhesive layer. It is at least 20 parts by weight, more preferably at least 20 parts by weight, even more preferably at least 30 parts by weight, preferably at most 150 parts by weight, more preferably at most 100 parts by weight, even more preferably at most 70 parts by weight.

  From the viewpoint of adhesiveness, heat resistance, insulation reliability, etc., the adhesive layer of the present invention preferably contains at least one kind of thermoplastic resin and thermosetting resin. The thermoplastic resin has functions such as adhesion, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. In addition, a thermosetting resin alone can form a hard but brittle adhesive film, but adding a thermoplastic resin to it adds toughness and provides an excellent adhesive.

  Although it does not specifically limit as a thermoplastic resin, From the point of adhesiveness, flexibility, and the relaxation effect of a thermal stress, NBR, SEBS, the acrylate ester which has a C1-C8 side chain, and / or Or a copolymer (acrylic rubber) containing methacrylic acid ester and acrylonitrile as a copolymerization component, polyamide resin, polyamideimide resin, polyimide resin, polyetherimide resin, polyesterimide resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin Examples thereof include polyvinyl butyral resin, polyurethane resin, polyester resin, silicone resin, phenoxy resin, and polyurea resin. Further, one kind or plural kinds of thermoplastic resins may be used. These thermoplastic resins may have a functional group capable of reacting with a thermosetting resin described later. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. These functional groups are preferable because the bond with the epoxy resin becomes strong and the heat resistance is improved.

  As the polyamide resin, those containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) as an essential component are suitable. Polyamide resin containing dimer acid is obtained by polycondensation of dimer acid and diamine by a conventional method. At this time, dicarboxylic acid other than dimer acid, azelaic acid, sebacic acid and the like is contained as a copolymerization component. Also good. Known diamines such as ethylenediamine, hexamethylenediamine, and piperazine can be used, and two or more diamines may be used in terms of hygroscopicity and solubility.

  As a thermoplastic resin, from the balance of adhesiveness, heat resistance, chemical resistance, and the like, acrylonitrile-butadiene copolymer (NBR-C) having a carboxyl group, styrene-butadiene-ethylene resin (SEBS-C), An acrylic rubber having an epoxy group, a carboxyl group or a hydroxyl group can be mentioned. Here, “C” means having a carboxyl group.

  Examples of NBR-C include those obtained by carboxylating terminal groups of a copolymer rubber obtained by copolymerizing acrylonitrile and butadiene at a molar ratio of about 10/90 to 50/50, or acrylonitrile, butadiene and acrylic acid, maleic acid, etc. And terpolymer rubbers of carboxyl group-containing polymerizable monomers. Specifically, PNR-1H (manufactured by Nippon Synthetic Rubber Co., Ltd.), “Nipol” 1072J, “Nipol” DN612, “Nipol” DN631 (manufactured by Nippon Zeon Co., Ltd.), “Hiker” CTBN (BF Goodrich) Etc.). Moreover, MX-073 (Asahi Kasei Co., Ltd. product) can be illustrated as SEBS-C.

  As the carboxyl group-containing acrylic rubber, SG-280DR, SG-70L, WS-023B (manufactured by Nagase ChemteX Corporation), and as the epoxy group-containing acrylic rubber, SG-P3, SG-80H (above Nagase Chemtex) XFP-1834 (manufactured by Toupe Co., Ltd.) and the like can be exemplified as “Nipol” AR-51 (manufactured by Nippon Zeon Co., Ltd.) and hydroxyl group-containing acrylic rubber.

  Among them, an acrylic rubber having an epoxy group, a carboxyl group, or a hydroxyl group is particularly preferably used because it does not contain a diene bond in the main chain and is not easily deteriorated by high temperature oxidation.

  The thermosetting resin is preferably used for realizing a balance of heat resistance, insulation at high temperature, chemical resistance, strength of the adhesive layer, and the like. Specific examples include known resins such as epoxy resins, phenol resins, melamine resins, xylene resins, furan resins, and cyanate ester resins. The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but diglycidyl ether such as bisphenol F, bisphenol A, bisphenol S, resorcinol, dihydroxynaphthalene, dicyclopentadiene diphenol, and epoxidation Examples include phenol novolak, epoxidized cresol novolak, epoxidized trisphenylol methane, epoxidized tetraphenylol ethane, epoxidized metaxylene diamine, cyclohexane epoxide, and the like. Specific examples include YD-128 (manufactured by Toto Kasei Co., Ltd.), “Epicoat” 828, “Epicoat” 1001, “Epicoat” 180 (manufactured by Japan Epoxy Resin Co., Ltd.), and the like. Furthermore, it is also effective to use a halogenated epoxy resin, particularly a brominated epoxy resin, for imparting flame retardancy. At this time, although the flame retardancy can be imparted only by the brominated epoxy resin, the heat resistance of the adhesive is greatly reduced, and therefore, it is more effective to use a mixed system with a non-brominated epoxy resin. Examples of brominated epoxy resins include copolymerized epoxy resins of tetrabromobisphenol A and bisphenol A, or brominated phenol novolac type epoxy resins such as “BREN” -S (manufactured by Nippon Kayaku Co., Ltd.). . Two or more of these brominated epoxy resins may be used in consideration of bromine content and epoxy equivalent.

  As the phenol resin, any known phenol resin such as novolak type phenol resin and resol type phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, p-t-butylphenol, nonylphenol, p-phenylphenol, cyclic alkyl-modified phenols such as terpene and dicyclopentadiene, hetero groups such as nitro groups, halogen groups, cyano groups, and amino groups Examples thereof include those having functional groups containing atoms, those having a skeleton such as naphthalene and anthracene, and resins composed of polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

  The total content of the thermosetting resin is preferably 5 to 400 parts by weight, more preferably 50 to 200 parts by weight with respect to 100 parts by weight of the thermoplastic resin. When the content is 5 parts by weight or more, an effect of improving the elastic modulus at high temperature is obtained, and the heat resistance of the adhesive sheet can be improved. When the content is 400 parts by weight or less, the flexibility of the adhesive sheet is maintained, and the stress relaxation effect and heat resistance are balanced, which is preferable.

  It is not limited at all that the adhesive layer constituting the adhesive sheet of the present invention contains a thermosetting resin curing agent and a curing accelerator. For example, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol, 2,4,6-tris (dimethylaminomethyl) phenol and 1,8-diazabicyclo (5,4,0) Tertiary amine compounds such as undecene-7, 3,3′5,5′-tetramethyl-4,4′-diaminodiphenylmethane, 3,3′5,5′-tetraethyl-4,4′-diaminodiphenylmethane, 3, , 3′-dimethyl-5,5′-diethyl-4,4′-diaminodiphenylmethane, 3,3′-dichloro-4,4′-diaminodiphenylmethane, 2,2′3,3′-tetrachloro-4, 4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfide, 3,3′-diaminobenzophenone, , 3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminobenzophenone, 3,4,4'-triaminodiphenyl sulfone, and other aromatic polyamines Boron trifluoride amine complexes such as boron trifluoride triethylamine complex, organic compounds such as 2-alkyl-4-methylimidazole, imidazole derivatives such as 2-phenyl-4-alkylimidazole, phthalic anhydride, trimellitic anhydride, etc. Organic phosphine compounds such as acid, dicyandiamide, triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine and tri (nonylphenyl) phosphine can be used. These may be used alone or in combination of two or more. The content is preferably 0.1 to 50 parts by weight with respect to 100 parts by weight of the adhesive composition.

  Moreover, a silane coupling agent can also be used together as a hardening | curing agent. The silane coupling agent has an organic functional group capable of binding or binding to silicon with an organic matrix, and a hydrolyzable group capable of binding to an inorganic material. Examples of the organic functional group include an alkyl group, a phenyl group, an amino group, an epoxy group, a vinyl group, a methacryloxy group, a mercaptooxy group, and generally bonded to a silicon atom via an alkylene group having 1 to 6 carbon atoms. is doing. Among them, those having an epoxy group or amino group as the organic functional group are preferable because they have good reactivity and are excellent in reflow resistance of the adhesive. Specifically, when the organic functional group is an amino group, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltris (β-methoxyethoxyethoxy) silane, N-methyl -Γ-aminopropyltrimethoxysilane, N- (β-aminoethyl) -γ-aminopropyltrimethoxysilane, N- (β-aminoethyl) -γ-aminopropylmethyldimethoxysilane, triaminopropyltrimethoxysilane, Examples thereof include N-phenyl-γ-aminopropyltrimethoxysilane and γ-4,5-dihydroxyimidazolepropyltriethoxysilane. When the organic functional group is an epoxy group, β-3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyl Examples include diethoxysilane.

  In addition to the above components, an inorganic filler may be contained for the purpose of improving film strength and improving adhesive strength and heat resistance. It is preferable that content of an inorganic filler is 5 to 60 weight% of the whole adhesive composition. When it is 5% by weight or more, an effect of improving the film strength is obtained, and when it is 60% by weight or less, the effect of improving the film strength is high without impairing the adhesive strength. About the kind of inorganic filler, the thing which does not decompose | disassemble at the temperature of 250-260 degreeC at the time of solder reflow is especially preferable from the point of reflow resistance. Specific examples include metal oxides such as silica and alumina, or glass. You may use these individually or in mixture of 2 or more types.

  Of these, silica is particularly preferable because the thermal decomposition temperature greatly exceeds 300 ° C., the fluidity of the adhesive sheet is easily adjusted, and the particle size is stable. There are no particular restrictions on the particle shape and crystallinity, and crushing systems, spheres, scales, etc. are used, but they have good dispersibility in paints, excellent adhesive strength and film strength of the adhesive composition, and thermal expansion. Since the effect of reducing the coefficient is great, fused spherical silica is preferably used. The method for producing the fused silica does not necessarily need to go through a molten state, and examples thereof include a method of melting crystalline silica and a method of synthesizing from various raw materials.

  Although it does not specifically limit about the particle size of an inorganic filler, From a viewpoint, such as a dispersibility, coating property, and reflow resistance, it is preferable that an average particle size is 0.01-2 micrometers. When the average particle size is 0.01 μm or more, it is possible to obtain a uniform dispersed state without causing particle aggregation in the adhesive coating during the adhesive manufacturing process, improving film strength, adhesive strength, and heat resistance. Can be improved. When the average particle size is 2 μm or less, the dispersion of the particles in the adhesive composition is good, the embedding failure in the adherend does not occur, and the effect of improving the film strength is excellent.

  The average particle size of the inorganic filler can be measured using a laser diffraction / scattering particle size distribution measuring device, a dynamic light scattering particle size distribution measuring device, or the like. Moreover, the particle diameter contained in an adhesive bond layer can also be investigated by TEM (transmission electron microscope) observation of the adhesive bond cross section after hardening.

  These inorganic fillers may be subjected to a surface treatment using a silane coupling agent or the like in order to improve heat resistance, adhesive strength and the like.

  In the present invention, the thickness of the entire adhesive layer can be appropriately selected in relation to the embedding of the adherend into the unevenness, the adhesive strength, the reflow resistance, the thermal cycle resistance, etc., and is not particularly limited, but is 10 to 500 μm. Is preferred.

  The adhesive sheet of the present invention has one or more peelable protective film layers. For example, the structure of protective film layer / adhesive layer (A) / adhesive layer (B), or the structure of protective film layer / adhesive layer (A) / adhesive layer (B) / protective film layer shown in FIG. Corresponds to this. A composite structure in which an insulating film such as polyimide is laminated in addition to the adhesive layer and the protective film layer is also included. The adhesive sheet may be adjusted in degree of curing by heat treatment. Adjustment of the degree of cure has the effect of preventing excessive flow of the adhesive when adhering the adhesive sheet to the wiring board or IC and preventing foaming due to moisture during heat curing. The degree of curing can be defined by, for example, the minimum viscosity (flow tester method) at the bonding processing temperature specified in JIS-K7210. The flow tester method requires conditions to be defined, but as an example, if the temperature is 120 ° C., the die size is 2 × 5 mm, and the test pressure is 9.8 MPa, 3000 to 60000 Pa · s, preferably 6000 to 30000 Pa · s is suitable. .

  The protective film layer as used herein refers to an adhesive before bonding an adhesive layer to a wiring board layer (TAB tape or the like) composed of an insulator layer and a conductor pattern or a layer (stiffener or the like) where no conductor pattern is formed. Although it will not specifically limit if it can peel without impairing the form and function of a layer, For example, polyester, polyolefin, polyphenylene sulfide, polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, polyvinyl butyral, polyvinyl acetate, polyvinyl alcohol , Polycarbonate, polyamide, polyimide, polymethylmethacrylate and other plastic films, and these are coated with a release agent such as silicone or fluorine compound, and these films are laminated Paper, paper or the like impregnated or coated with a releasing property of a certain resin. More preferably, the protective film layer is colored. Since it can be confirmed visually whether the protective film has been peeled off, forgetting to peel off can be prevented.

When the protective film layers are provided on both surfaces of the adhesive layer, when the peeling force of each protective film layer to the adhesive layer is F ₁ and F ₂ (F ₁ > F ₂ ), F ₁ -F ₂ is preferably It is 5 Nm ⁻¹ or more, more preferably 15 Nm ⁻¹ or more. Further, the peeling forces F ₁ and F ₂ are preferably ¹ to 200 Nm ⁻¹ , more preferably 3 to 100 Nm ⁻¹ .

  Next, examples of the method for manufacturing the adhesive sheet and the semiconductor device of the present invention will be described.

(1) Adhesive sheet (a) A paint obtained by dissolving an adhesive composition in a solvent is applied onto a polyester film having releasability and dried. It is preferable to apply so that the thickness of the adhesive layer is 10 to 100 μm. Drying conditions are 100 to 200 ° C. and 1 to 5 minutes. Solvents are not particularly limited, but aromatics such as toluene, xylene and chlorobenzene, ketones such as methylethylketone and methylisobutylketone, and aprotic polar solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone alone or a mixture are preferred. It is.

  (B) The adhesive sheet of the present invention is obtained by laminating a polyester or polyolefin-based protective film layer having a releasability with a lower peel strength than the above to the film of (a). When the adhesive thickness is further increased, the adhesive sheet may be laminated a plurality of times. After lamination, for example, the degree of curing may be adjusted by heat treatment at 40 to 70 ° C. for about 20 to 200 hours.

(2) Semiconductor device (a) A 35 to 12 μm electrolytic copper foil is laminated on a tape with an adhesive for TAB under conditions of 130 to 170 ° C. and 0.1 to 0.5 MPa, and subsequently 80 to 80 in an air oven. A heat curing treatment at 170 ° C. is performed to produce a TAB tape with a copper foil. Photoresist film formation, etching, resist peeling, electrolytic nickel plating, electrolytic gold plating, and solder resist film fabrication are performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method to fabricate a semiconductor connection substrate.

  (B) The adhesive sheet obtained in (1) is thermocompression bonded to the semiconductor connection substrate of (a), and the IC is thermocompression bonded to the opposite surface of the adhesive sheet. In this state, heat curing at 120 to 180 ° C. is performed.

  (C) The IC and the semiconductor connection substrate are wire-bonded under conditions of about 110 to 200 ° C. and about 100 to 150 kHz, and then sealed with resin.

  (D) Finally, a solder ball is mounted by reflow to obtain the semiconductor device of the present invention.

  EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. First, evaluation methods used in Examples and Comparative Examples will be described.

<1> Preparation of evaluation pattern tape An 18 μm thick electrolytic copper foil was applied to a tape with adhesive for TAB (trade name # 7100, manufactured by Toray Industries, Inc.) at 140 ° C., 0.3 MPa, 0.3 m / min. And roll laminated. Subsequently, in an air oven, a heat curing treatment was sequentially performed at 80 ° C. for 3 hours, at 100 ° C. for 5 hours, and at 150 ° C. for 5 hours to prepare a TAB tape with copper foil. For evaluation, a photoresist film is formed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, and etching and resist peeling are performed, and a comb-like conductor pattern having a conductor width of 25 μm and a distance between conductors of 25 μm is provided. A pattern tape was prepared.

<2> Adhesive Strength The adhesive sheet of the present invention was roll-laminated on the conductor pattern of the evaluation pattern tape prepared in the above <1> under the conditions of 130 ° C., 0.5 MPa, and 0.3 m / min. Thereafter, in the air oven, a post-cure was sequentially performed at 100 ° C. for 1 hour and at 160 ° C. for 2 hours to prepare an evaluation sample. After slitting to a width of 5 mm from the adhesive sheet side, the adhesive sheet was peeled off at a speed of 50 mm / min in the 90 ° direction, and the adhesive force at that time was measured. The adhesive strength is preferably 5 N / cm or more from the viewpoint of processability, handling properties, and device reliability.

<3> Reflow resistance 20 pieces prepared by cutting the post-cured evaluation sample prepared by the method <2> into 30 mm squares were prepared. The sample was heat-dried at 125 ° C. for 12 hours and then moisture-absorbed for 168 hours under conditions of 30 ° C. and 70% RH, and then subjected to IR reflow at a maximum temperature of 250 ° C. for 10 seconds or a maximum temperature of 260 ° C. for 10 seconds. The peeled state was observed with an ultrasonic short wound machine. In the test at each reflow temperature, the number of samples where peeling occurred in 20 pieces was examined, and the ratio was defined as a defective rate.

<4> Surface resistivity On the copper foil surface of the TAB tape with copper foil produced by the method of <1> above, the insulation resistance of the surface layer of JIS C-6471 copper-clad laminate for flexible printed wiring boards A pattern was prepared by a similar method, and the surface resistivity was measured.

<5> Package defect rate Photoresist film formation, etching, resist stripping, electrolytic nickel plating, electrolytic gold plating, solder resist film creation are performed on the TAB tape with copper foil prepared by the method of <1> above, respectively. A semiconductor connection substrate was produced. The adhesive layer (B) having a high surface resistivity of the adhesive sheet was thermocompression bonded to the substrate for semiconductor connection, and the IC was thermocompression bonded to the adhesive layer (A) having a low surface resistivity of the adhesive sheet. In this state, heat curing was performed at 160 ° C. for 2 hours. After the IC and the semiconductor connection substrate were connected by wire bonding at 200 ° C. and 150 kHz, resin sealing was performed. FIG. 3 is a cross-sectional view of the manufactured semiconductor device. The number of defective packages out of 100 manufactured semiconductor devices was defined as a package defect rate.

<6> Thermal cycle property Twenty pieces of post-cured evaluation samples prepared by the method <2> were cut into 30 mm squares. The sample was put into a thermal cycle tester (PL-3 type, manufactured by Tabai Espec Co., Ltd.), and a thermal cycle test was performed at -65 ° C to 175 ° C. The cycle of holding the minimum temperature and the maximum temperature for 30 minutes each was evaluated for the presence or absence of delamination in the sample after a total of 500 cycles. The number of samples where peeling occurred in 20 pieces was examined, and the ratio was defined as the defective rate.

Examples 1-6, Comparative Example 1
40 parts by weight of epoxy group-containing acrylic rubber (manufactured by Nagase ChemteX Corp., trade name SG-P3), 17 parts by weight of o-cresol novolac type epoxy resin (Japan Epoxy Resin Co., Ltd., trade name Epicoat 180), 17 parts by weight of bisphenol A type epoxy resin (trade name Epicoat 828, manufactured by Japan Epoxy Resin Co., Ltd.), 20 parts by weight of spherical silica (trade name SE-1, manufactured by Tokuyama Co., Ltd., average particle size 0.7 μm), phenol 5.9 parts by weight of novolak resin (manufactured by Gunei Chemical Industry Co., Ltd., trade name: PSM4261), 0.1 part by weight of 2-undecylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: Curazole C11Z) DMF (dimethylformamide) / monochlorobenzene / MIBK (methyl ethyl isobutyrate) to a concentration of 28% by weight Stirred at 40 ° C. ketone) an equal amount mixed solvent was dissolved to prepare an adhesive solution (b).

This adhesive solution (b) was applied to a 38 μm-thick polyethylene terephthalate film with a silicone release agent (“Film Vina” GT manufactured by Fujimori Kogyo Co., Ltd.) with a thickness of 50 μm (in the case of Examples 1 to 6). Or a thickness of 70 μm (in the case of Comparative Example 1), dried at 150 ° C. for 4 minutes, and bonded with a protective film to form an adhesive layer having a surface resistivity of 4 × 10 ¹⁴ Ω / □ (B ) Was formed.

  Zinc oxide (trade name: 1 type zinc oxide manufactured by Hakusui Tech Co., Ltd.), zinc oxide doped with Al (trade name: Passet CK, manufactured by Hakusui Tech Co., Ltd.), tin oxide (Mitsui) Metal Mining Co., Ltd., trade name Pastoran) was mixed in the amounts shown in Table 1 to obtain an adhesive solution (a).

  This adhesive solution (a) was applied with a bar coater to a polyethylene terephthalate film with a silicone release agent having a thickness of 38 μm (“Film Vina” GT manufactured by Fujimori Kogyo Co., Ltd.) so as to have a thickness of 20 μm. After drying for 4 minutes, the adhesive layer (B) formed by the above method was roll-laminated to prepare an adhesive sheet. The evaluation results of the obtained adhesive sheet are shown in Table 1.

  As is apparent from the results of Examples and Comparative Examples in Table 1, an adhesive sheet having an antistatic effect on the IC chip was obtained by the present invention while having an insulating effect of the entire adhesive.

FIG. 14 is a cross-sectional view of one embodiment of a BGA semiconductor device. Sectional drawing of the one aspect | mode of the adhesive agent sheet for electronic devices of this invention. FIG. 14 is a cross-sectional view of one embodiment of a BGA semiconductor device using the electronic device adhesive sheet of the present invention.

Explanation of symbols

1 IC
2, 9 Adhesive layer 3 Insulator layer 4 Conductor pattern 5 Bonding wire 6 Solder ball 7 Sealing resin 8 Protective film layer 10 Layer having low surface resistivity

Claims (6)

A semiconductor adhesive sheet having two or more adhesive layers on at least one surface of a protective film layer, wherein the surface resistivity of at least one layer of the adhesive layer is 1 × 10 ¹⁰ to 1 × 10 ¹² Ω / □. An adhesive sheet for semiconductors, characterized in that The adhesive sheet for semiconductor according to claim 1, comprising an adhesive layer having a surface resistivity of 1 × 10 ¹⁰ to 1 × 10 ¹² Ω / □ in at least one outermost layer of the adhesive layer. The surface resistivity of at least one layer of the adhesive layer is 1 × 10 ¹⁰ to 1 × 10 ¹² Ω / □, and the surface resistivity of other layers is 1 × 10 ¹⁴ Ω or more. The adhesive sheet for semiconductors according to 1. The adhesive layer having a surface resistivity of 1 × 10 ¹⁰ to 1 × 10 ¹² Ω / □ is selected from the group consisting of zinc oxide, tin oxide, zinc oxide doped with a different metal, and tin oxide doped with a different metal. The adhesive sheet for semiconductor according to claim 1, comprising at least one conductive filler. The board | substrate for semiconductor connection using the adhesive agent sheet for semiconductors in any one of Claims 1-4. A semiconductor device using the semiconductor connection substrate according to claim 5.

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