JPH11220051A - Adhesive sheet for semiconductor device, part for semiconductor-integrated-circuit connecting substrate and semiconductor device using this part - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reflow resistance, thermal cycle property and processing property, by specifying the thickness of adhesive layer in an adhesive sheet for a semiconductor device having the laminated layer comprising at least one or more protecting layers and an adhesive layer. SOLUTION: The adhesive sheet for a semiconductor device has the constitution having the laminated body comprising at least one or more layers of protecting films 24 and an adhesive layer 23. For example the sheet corresponds to the two-layer constitution of protecting film layer 24/adhesive layer 23 or the three layer constitution of protecting film layer 24/adhesive layer 23/protecting film layer 24. The thickness of one adhesive layer 23 is in the range of 10 μm-250 μm based on stress relief and handling. The protecting film layer 24 is the film, wherein the mold release of silicone or fluorochemical material or the like is performed. Furthermore, it is recommendable that the polyester film wherein the mold release is performed is excellent in heat resistance.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive sheet for a semiconductor device constituting a substrate (interposer) for connecting a semiconductor integrated circuit used when mounting and packaging a semiconductor integrated circuit. More specifically, a ball grid array (BGA) and a land grid array (LG
A), a wiring board layer composed of an insulator layer and a conductor pattern constituting a substrate for connecting a semiconductor integrated circuit used in a pin grid array (PGA) method, and a conductor pattern such as a metal reinforcing plate (stiffener) are formed. The present invention relates to an adhesive sheet for a semiconductor device having a function of adhering layers that are not present and having a function of relaxing thermal stress generated between the layers due to a temperature difference.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor integrated circuit (IC) package, a dual in-line package (DIP),
Package forms such as a small outline package (SOP) and a quad flat package (QFP) have been used. However, with the increase in the number of pins of the IC and the miniaturization of the package, the limit of the QFP that can increase the number of pins is approaching its limit. This is due to the difficulty in maintaining the flatness of the leads and the difficulty in obtaining solder printing accuracy on the printed circuit board, particularly when mounting on a printed circuit board. Therefore, in recent years, BGA has been
System, LGA system, PGA system, etc. have been put to practical use. Above all, the BGA method has attracted attention because of its low cost, light weight, and thinness due to the use of plastic materials.

FIG. 1 shows an example of the BGA system. A layer 7 on which no conductor pattern is formed, such as an insulator layer 3 and a conductor pattern 5 for connecting the IC 1, a wiring board layer made of an adhesive 4, a reinforcing plate (stiffener), a radiator plate (heat spreader), and a shield plate , And at least one or more adhesive layers 6 for laminating them, and further has a gold bump 2 and a solder resist 8,
The IC 1 is packaged with a sealing resin 10. The BGA method is characterized in that solder balls 9 corresponding to the number of pins of an IC are provided on a grid (grid array) as external connection portions of a semiconductor integrated circuit connection substrate to which the IC 1 is connected. The connection to the printed circuit board is performed by placing the solder ball surface on the conductor pattern 5 of the printed circuit board on which the solder is already printed, and melting the solder by reflow. The greatest feature is that since the surface of the substrate for connecting a semiconductor integrated circuit can be used, more terminals can be arranged in a smaller space as compared with a package that can be used only around a QFP or the like. A chip-scale package (C
SP), and based on their similarity, micro BGA (μ-B
GA). The present invention can be applied to a CSP having these BGA structures.

On the other hand, the BGA method has the following problems. (A) maintaining the flatness of the surface of the solder ball; (b) improving the heat radiation; (c) mitigating the thermal stress applied to the solder ball during temperature cycling and reflow; (d) increasing the number of reflows. Requires high reflow resistance. As a method to improve these, reinforcement for the substrate for connecting semiconductor integrated circuits,
A method of laminating a material such as a metal plate for the purpose of heat radiation and electromagnetic shielding is generally used. In particular, the wiring board layer composed of an insulator layer and a conductor pattern for connecting an IC has a T
This is important when an AB tape or a flexible printed board is used. For this reason, the substrate for connecting a semiconductor integrated circuit is
As illustrated in FIG. 2, a wiring board layer (FIG. 3) including an insulator layer 11 and a conductor pattern 13 for connecting an IC and an adhesive layer 12 (FIG. 3), a reinforcing plate (stiffener), a heat sink (heat spreader), It is configured to have at least one or more layers 15 such as a shield plate on which no conductor pattern is formed, an adhesive layer 14 for laminating these layers, and a solder resist 16. Note that FIG.
The wiring board layer (pattern tape) illustrated in FIG. 1 has a sprocket hole 19 for transport and a device hole 20 for connecting a semiconductor to the flexible insulating layer 17.
And a conductor pattern 21 and a conductor portion 22 for external connection are laminated thereon with an adhesive layer 18 interposed therebetween. These semiconductor integrated circuit connection substrates are prepared by laminating or applying the adhesive composition in a semi-cured state on any of a wiring board layer, a layer on which a conductor pattern is not formed, or a metal plate such as a reinforcing plate in advance, and drying. In general, a product is prepared by pasting, bonding together in a process before connecting ICs, curing by heating, and molding.

[0005] Finally, the adhesive layer 14 remains inside the package. From the above points, the following points can be cited as characteristics required of the adhesive layer 14. (A) easy workability,
(B) reflow resistance, (c) stress absorption (low stress) generated between different kinds of materials such as a wiring board layer and a reinforcing plate during temperature cycling or reflow, (d) when laminated on wiring. Insulation and the like can be mentioned.

[0006] Among them, important requirements are reflow resistance and workability. In the mounting method in which the entire package is heated to a high temperature of 210 to 270 ° C. such as solder bath immersion, heating with an inert gas saturated vapor (a vapor phase method), and infrared reflow, the adhesive layer is peeled off and the package is reflow resistant. Is to lower the reliability. It is said that the occurrence of peeling in the reflow process is caused by explosive vaporization and expansion of the moisture absorbed during the time from heating after the adhesive layer is cured until during the mounting process,
As a countermeasure, a method in which a post-cured package is stored in a completely dried and sealed container and then shipped is used.

The easy processability is a characteristic required for improving the reflow resistance. It increases the yield of package production and reduces the generation of foreign matter and moisture between the adhesive layer and the adherend. For the purpose of suppressing generation, low defectivity and workability in a short time are required.

For these reasons, various improvements in adhesives have been studied. For example, as an adhesive layer having excellent thermal cycle resistance, a thermoplastic resin or a silicone elastomer having a low elastic modulus (Japanese Patent Publication No. 6-50448).
And so on.

[0009]

However, the method of enclosing a dry package in a container has disadvantages in that the manufacturing process and the handling of the product are complicated, and the product price is extremely high. In addition, although various proposed adhesives have excellent thermal cycle resistance, they did not satisfy reflow resistance. Further, with regard to processability, there has been no proposal as an adhesive sheet for a semiconductor device having a particularly excellent structure.

An object of the present invention is to provide an adhesive sheet for a semiconductor device which solves the problems caused in the reflow step, has high reliability, is excellent in reflow resistance and thermal cycleability, and is excellent in workability. Is to do.

[0011]

That is, the present invention relates to an adhesive sheet for a semiconductor device having a laminate comprising at least one protective film layer and an adhesive layer, wherein the adhesive layer has a thickness of 10 to 10. An adhesive sheet for a semiconductor device, wherein the adhesive sheet is in a range of 250 μm, and a component of a substrate for connecting a semiconductor integrated circuit using the adhesive sheet;
And a semiconductor device using the same.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION The adhesive sheet for a semiconductor device of the present invention, which will be described in detail below, has a structure having at least one or more protective film layers and a laminate comprising an adhesive layer. Say. For example, a two-layer structure of a protective film layer / adhesive layer, or a protective film layer / adhesive layer /
The three-layer structure of the protective film layer corresponds to this. The thickness of the adhesive layer is 10 μm to 2 from the viewpoint of stress relaxation and handling.
It is in the range of 50 μm, preferably in the range of 30 μm to 150 μm.

The protective film layer of the present invention is a wiring board layer (such as a TAB tape) composed of an insulator layer and a conductor pattern.
Alternatively, there is no particular limitation as long as the adhesive layer can be peeled off without impairing the form and function of the adhesive layer before the adhesive layer is bonded to a layer (a stiffener, a heat spreader, etc.) on which a conductor pattern is not formed. , Polyolefin, polyphenylene sulfide,
Polyvinyl chloride, polytetrafluoroethylene, polyvinyl fluoride, polyvinyl butyral, polyvinyl acetate,
Plastic films of polyvinyl alcohol, polycarbonate, polyamide, polyimide, polymethyl methacrylate, etc., films coated with a release agent such as silicone, alkyd resin, polyolefin resin or fluorine-containing compound, or laminating these films Paper, a laminate of these films, and paper impregnated with or coated with a releasable resin. Among these protective films, those which are particularly preferably used in the present invention are films that have been subjected to a release treatment of silicone or a fluorine-containing compound, etc., which is excellent in control of the release property. More preferably, the polyester film subjected to the release treatment described above is excellent in heat resistance. Further, the protective film may be colored with a pigment so that visibility is good at the time of processing.

The thickness of the protective film can be classified according to function due to the method of preparing the adhesive sheet. That is, a protective film used as a base material to which a paint is applied when an adhesive sheet is prepared, and a protective film laminated on an adhesive layer dried after application. First, the thickness of the protective film used as a base material to which the coating material is applied is required to have a heat resistance because of a drying process after coating, and a thickness of 20 μm to
It is in the range of 100 μm, preferably 25 μm or more, more preferably 35 μm or more. Further, the protective film laminated on the adhesive layer dried after coating is preferably in a range of 10 μm to 100 μm, in particular, if it is not heated after coating, it is sufficient to prevent adhesion of foreign substances and the like. Is 15 μm or more, more preferably 25 μm or more. However, the thickness of these protective films is 100 μm
The above is not suitable because it is difficult to process the adhesive layer so as not to impair the form of the adhesive layer.

Further, the thickness of the protective film of the present invention is closely related to the thickness of the adhesive layer and is important. That is,
When the thickness of the adhesive layer is 10 to 15 μm, if the thickness of the protective film is less than 10 μm, the adhesive layer of the adhesive sheet may be damaged by external impact or the like, which is not preferable. When the thickness of the adhesive layer is 15 to 30 μm, as described above, if the thickness of the protective film is less than 15 μm, the adhesive layer of the adhesive sheet is undesirably damaged by an external impact or the like. Next, the thickness of the adhesive layer is 30 to 50 μm.
m, the thickness of the protective film is 20 as described above.
When the thickness is less than μm, the adhesive layer of the adhesive sheet is damaged by an external impact or the like, which is not preferable. Heat shrinkage of the film occurs due to the temperature, and it is difficult to realize a form as an adhesive sheet, which is not preferable. Similarly, when the thickness of the adhesive layer is 50 to 1
In the case of 00 μm, if the thickness of the protective film used as the base material on which the coating material is applied is less than 35 μm, it is difficult to realize the form as the adhesive sheet, which is not preferable. Further, in order to make the thickness of the adhesive layer 30 μm to 250 μm, a method of laminating the applied adhesive layers to have a predetermined thickness can be selected. In this case, if the thickness of the protective film used as a base material for applying the coating material is less than 25 μm, not only the problem of heat shrinkage of the film at the time of coating processing, but also wrinkles, bubbles and the like are involved during lamination. This is not preferable because it is difficult to realize a form as an adhesive sheet.

When a protective film layer is provided on both sides of the adhesive layer, when the peeling force of each protective film layer from the adhesive layer is F1, F2 (F1> F2), F1-F2
F2 is preferably at least 5 N / m, more preferably 10 N / m.
N / m or more is required.

When F1-F2 is smaller than 5 N / m,
It is not stable which release film side the release surface is on,
It is not preferable because it causes a problem in use. Also, the peeling force F
1 and F2 are both 1 to 200 N / m, preferably 3 to 200 N / m.
It is 150 N / m, more preferably 3 to 100 N / m. If it is less than 1 N / m, the protective film will fall off, and if it exceeds 200 N / m, peeling becomes difficult, which is not preferable.

The adhesive composition constituting the adhesive layer of the present invention comprises at least one thermoplastic resin and at least one thermosetting resin.
It is more preferable to include more than one kind from the viewpoint of reflow resistance, but the kind is not particularly limited. Thermoplastic resin has functions such as adhesion, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. Thermosetting resin has heat resistance, insulation at high temperatures, chemical resistance, and adhesion. This is important for achieving the balance of the strength and the like of the agent layer.

As the thermoplastic resin, acrylonitrile-butadiene copolymer (NBR), acrylonitrile-
Butadiene rubber-styrene resin (ABS), polybutadiene, styrene-butadiene-ethylene resin (SEB
S), acrylic, polyvinyl butyral, polyamide,
Known materials such as polyester, polyimide, polyamideimide, and polyurethane are exemplified. Further, these thermoplastic resins may have a functional group capable of reacting with a thermosetting resin described below. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. These functional groups are preferable because the bond with the thermosetting resin is strengthened and the heat resistance is improved. As the thermoplastic resin, a copolymer containing butadiene as an essential copolymer component is particularly preferred from the viewpoint of adhesiveness to the material (B), flexibility, and an effect of relaxing thermal stress, and various types can be used. Particularly, acrylonitrile-butadiene copolymer (NBR), styrene-butadiene-ethylene resin (SEBS), styrene-butadiene resin (SBS), and the like are preferable from the viewpoints of adhesion to metals, chemical resistance, and the like. Further, a copolymer containing butadiene as an essential copolymer component and having a carboxyl group is more preferable. For example, NBR (NBR-C) and SEB
S (SEBS-C), SBS (SBS-C) and the like. Examples of NBR-C include acrylonitrile and butadiene copolymerized in a molar ratio of about 10/90 to 50/50, in which the end groups of a copolymer rubber are carboxylated, or acrylonitrile, butadiene and acrylic acid, maleic acid, etc. And a ternary copolymer rubber of a carboxyl group-containing polymerizable monomer. Specifically, P
NR-1H (Nippon Synthetic Rubber Co., Ltd.), "Nipol" 1
072J, "Nipole" DN612, "Nipole" DN
631 (Nippon Zeon Co., Ltd.), "Hiker" CT
BN (manufactured by BF Goodrich) and the like. Also, SEB
MX-073 (manufactured by Asahi Kasei Corporation) was used as the SC.
As BS-C, D1300X (Shell Japan Co., Ltd.)
Manufactured).

Examples of the thermosetting resin include known resins such as an epoxy resin, a phenol resin, a melamine resin, a xylene resin, a furan resin, and a cyanate ester resin. Particularly, epoxy resin and phenol resin are preferable because of their excellent insulating properties.

The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but diglycidyl ethers such as bisphenol F, bisphenol A, bisphenol S, resorcinol, dihydroxynaphthalene, dicyclopentadiene diphenol and the like. Epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, alicyclic epoxy such as cyclohexaneepoxide, and the like. Further, it is effective to use a halogenated epoxy resin, particularly a brominated epoxy resin, for imparting flame retardancy. At this time, although the use of only the brominated epoxy resin can impart flame retardancy, the heat resistance of the adhesive is greatly reduced, so that it is more effective to use a mixed system with a non-brominated epoxy resin. Examples of brominated epoxy resins include copolymerized epoxy resins of tetrabromobisphenol A and bisphenol A, or "BRE
N "-S (manufactured by Nippon Kayaku Co., Ltd.), and the like. Brominated phenol novolak type epoxy resins. These brominated epoxy resins may be mixed even if two or more kinds are mixed in consideration of bromine content and epoxy equivalent. good.

As the phenol resin, any known phenol resin such as a novolak phenol resin and a resol phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, and p-phenylphenol; cyclic alkyl-modified phenols such as terpene and dicyclopentadiene; and heterocycles such as nitro, halogen, cyano, and amino groups. Those having a functional group containing atoms, naphthalene, those having a skeleton such as anthracene,
Examples of resins include polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

The addition amount of the thermosetting resin is 10
5-400 parts by weight, preferably 50-400 parts by weight per 0 parts by weight
200 parts by weight. When the addition amount of the thermosetting resin is less than 5 parts by weight, the elastic modulus at a high temperature is remarkably reduced, and the semiconductor integrated circuit connection substrate is deformed during use of the device on which the semiconductor device is mounted, and is handled in a processing step. This is not preferable because of lack of workability. If the addition amount of the thermosetting resin exceeds 400 parts by weight, the modulus of elasticity is high, the coefficient of thermal expansion is small, and the effect of relaxing the thermal stress is small.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited at all. For example, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol,
Tertiary amine compounds such as 4,6-tris (dimethylaminomethyl) phenol and 1,8-diazabicyclo (5,4,0) undecene-7; 3,3′5,5′-tetramethyl-4,4 ′ -Diaminodiphenylmethane, 3,
3'5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-diethyl-4,4'-diaminodiphenylmethane, 3,3'-
Dichloro-4,4'-diaminodiphenylmethane, 2,
2'3,3'-tetrachloro-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfide, 3,3'-diaminobenzophenone, 3,3'-diaminodiphenylsulfone, 4,4'-diamino Diphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'-diaminobenzophenone, 3,4,4 '
Aromatic amines such as triaminodiphenylsulfone; amine complexes of boron trifluoride such as triethylamine boron trifluoride; imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole; Phthalic acid, organic acids such as trimellitic anhydride, dicyandiamide, triphenylphosphine, trimethylphosphine, triethylphosphine,
Known compounds such as organic phosphine compounds such as tributylphosphine, tri (p-methylphenyl) phosphine and tri (nonylphenyl) phosphine can be used.
These may be used alone or in combination of two or more. The addition amount is preferably 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive composition.

In addition to the above components, addition of organic or inorganic components such as antioxidants and ion scavengers is not limited as long as the properties of the adhesive are not impaired. Examples of fine inorganic components include aluminum hydroxide, magnesium hydroxide, metal hydroxides such as calcium aluminate hydrate, silica, alumina, zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, and magnesium oxide. Titanium oxide, iron oxide, cobalt oxide, chromium oxide, metal oxides such as talc, inorganic salts such as calcium carbonate, aluminum, gold, silver, nickel, iron, metal fine particles such as, or carbon black, glass, Examples of the organic component include crosslinked polymers such as styrene, NBR rubber, acrylic rubber, polyamide, polyimide, and silicone. These may be used alone or in combination of two or more. The average particle diameter of the fine component is preferably 0.2 to 5 μm in consideration of dispersion stability. Also,
The compounding amount is suitably 2 to 50 parts by weight of the whole adhesive composition.

The components (hereinafter, referred to as components) of the substrate for connecting a semiconductor integrated circuit of the present invention are materials in an intermediate processing stage used for producing a substrate for a semiconductor integrated circuit and a semiconductor device. This component uses a flexible printed circuit board or a TAB tape as a wiring board layer composed of an insulator layer and a conductor pattern, and has a silicone protective polyester film on one or both sides thereof.
A wiring board with an adhesive laminated with an adhesive layer of a stage or a metal plate of copper, stainless steel, 42 alloy or the like as a layer on which no conductor pattern is formed, and having a protective film on one or both surfaces in the same manner as described above A metal plate with an adhesive (such as a stiffener with an adhesive) in which an adhesive layer of a stage is laminated corresponds to the component of the present invention. A so-called adhesive obtained by laminating a B-stage adhesive layer having a protective film on the outermost layer, even when each of the wiring board layer including the insulator layer and the conductor pattern and one or more layers on which the conductor pattern is not formed are provided. The present invention also includes a substrate for connecting a semiconductor integrated circuit.

The semiconductor device referred to in the present invention means a device manufactured using the semiconductor device adhesive sheet of the present invention.
For example, the shape and structure are not particularly limited as long as the package is a BGA type or LGA type package. The connection method between the semiconductor integrated circuit connection substrate and the IC can be any of TAB gang bonding and single point bonding, wire bonding used for a lead frame, resin sealing by flip chip mounting, anisotropic conductive film connection, etc. Good. Further, a package called a CSP is also included in the semiconductor device of the present invention.

Next, examples of the adhesive sheet for a semiconductor device of the present invention, components of a substrate for connecting a semiconductor integrated circuit, and a method of manufacturing a semiconductor device using the same will be described.

(1) Preparation of adhesive sheet for semiconductor device:
A coating material in which the adhesive composition of the present invention is dissolved in a solvent is applied on a polyester film having releasability and dried. It is preferable to apply the adhesive layer so that the film thickness is 10 to 100 μm. Drying conditions are 100 ~ 200 ° C, 1 ~
5 minutes. Solvents are not particularly limited, but aromatic solvents such as toluene, xylene, and chlorobenzene; ketones such as methyl ethyl ketone and methyl ethyl isobutyl ketone; aprotic polar solvents such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidine alone or as a mixture; Is preferred.

[0030] A polyester or polyolefin-based protective film having a weak release force and a releasing property is further laminated on the coated and dried adhesive layer to obtain the adhesive sheet of the present invention. In order to further increase the thickness of the adhesive, the adhesive sheet may be laminated a plurality of times. In some cases, after lamination, the degree of curing may be adjusted by aging, for example, at 40 to 100 ° C. for about 1 to 200 hours. FIG. 4 illustrates the shape of the adhesive sheet for a semiconductor device obtained by the present invention.

The adhesive sheet for a semiconductor device of the present invention obtained as described above is obtained by semi-curing the adhesive composition on a layer (a stiffener, a heat spreader, etc.) in which a wiring board layer and a conductor pattern are not formed in advance. After passing through a process of producing an intermediate processed product laminated in a state, it is used as a substrate for connecting a semiconductor integrated circuit by bonding, heating and curing in a process before connecting the IC. In this case, in order to prevent air bubbles and foreign matter from being caught between the adhesive layer and the above-mentioned adherend, to process the adhesive sheet so as not to impair the form and function thereof, and to prepare a substrate for connecting a semiconductor integrated circuit. In order to increase the yield, it is preferable that the adhesive sheet for a semiconductor device is supplied in a roll shape and has a structure that can withstand a continuous process. Further, the adhesive sheet for a semiconductor device supplied in a roll shape may be prepared in advance in a width corresponding to the size of the substrate for connecting a semiconductor integrated circuit. Further, it is more preferable that the adhesive sheet for a semiconductor device supplied in a roll shape is dried under reduced pressure and then hermetically sealed and packaged by heat sealing as a means of increasing the reflow resistance. The reduced pressure condition at this time may be any value as long as the water attached to the surface layer of the semiconductor device adhesive sheet can be reduced.
A condition of 30,000 Pa or less is sufficient, but is preferably 15,000 Pa or less, more preferably 133 Pa or less.

(2) Production of a component (stiffener with adhesive) of a substrate for connecting a semiconductor integrated circuit: thickness 0.05 to
A 0.5 mm copper plate or a stainless steel plate is degreased with acetone, and the protective film on one side of the adhesive sheet for a semiconductor device prepared in the above (1) is peeled off and then laminated. A lamination temperature of 20 to 200 ° C. and a pressure of 0.1 to 3 MPa are preferred. Alternatively, the paint of (1) may be directly applied to the metal plate and dried, and a protective film may be laminated. Finally, punching and cutting are performed as appropriate depending on the shape of the semiconductor device. FIG. 5 illustrates the component of the present invention.

(3) Preparation of a substrate for connecting a semiconductor integrated circuit:
The part (stiffener with adhesive) obtained in (2)
A stiffener with an adhesive is punched out with a mold, for example, a square shape having a square hole in the center. Peel off the protective film from the stiffener with adhesive. A three-layer TAB tape in which an adhesive layer and a protective film layer are laminated on a polyimide film is processed by the following steps (a) to (d). (A) perforation of sprocket and device holes; (b) thermal lamination with copper foil; (c) tin or gold plating. The center hole of the stiffener with the adhesive is bonded to the conductor pattern surface of the wiring substrate layer obtained as described above or the polyimide film surface of the back surface so as to match the device hole of the wiring substrate. The bonding conditions are preferably a temperature of 20 to 200 ° C. and a pressure of 0.1 to 3 MPa. Finally, post-curing is performed at 80 to 200 ° C. for about 15 to 180 minutes for heating and curing the adhesive layer in a hot air oven.

FIG. 2 shows an example of the substrate for connecting a semiconductor integrated circuit described above.

(4) Fabrication of a semiconductor device: The inner lead portion of the substrate for connecting a semiconductor integrated circuit of (3) is thermocompression-bonded (inner lead bonding) to a gold bump of the IC.
With. Next, a semiconductor device is manufactured through a sealing step using a sealing resin. FIG. 1 is a cross-sectional view of one embodiment of a semiconductor device.

[0036]

The present invention will be described more specifically with reference to the following examples.

Example 1 The following thermoplastic resin, epoxy resin and other additives were blended so as to have the composition ratio of composition 1 shown in Table 1, respectively, and DMF / monochloroform was adjusted to a concentration of 28% by weight. The mixture was stirred and dissolved at 40 ° C. in a benzene / MIBK mixed solvent to prepare an adhesive solution.

A. Epoxy resin 1. o-cresol novolak type epoxy resin (epoxy equivalent: 200) Bisphenol A type epoxy resin (epoxy equivalent:
186) B.I. C. Thermoplastic resin SEBS-C (MX-073, manufactured by Asahi Kasei Corporation) D. Inorganic filler Aluminum hydroxide (average particle size: 2 μm) P. phenol resin phenol novolak resin (hydroxyl equivalent: 107) Additives 1,4,4'-Diaminodiphenylsulfone 2.2-Heptadecylimidazole These adhesive solutions were applied to a 25 μm-thick silicated polyester film 1 with a bar coater for about 50 μm.
It was applied to a dry thickness of μm and dried at 100 ° C. for 1 minute and at 150 ° C. for 5 minutes to prepare an adhesive sheet.
On the other hand, an adhesive solution is similarly applied to a polyester film 2 having a lower peeling force than the polyester film 1 so as to have a thickness of about 50 μm, and then dried. Take-up,
An adhesive sheet having a thickness of 100 μm was prepared.

[Examples 2 to 3, Comparative Examples 1 to 3] The thickness of the adhesive layer, the thickness and the material of the protective film were adjusted to the thicknesses shown in Table 2, and the conditions other than those described above were the same as in Example 1. Similarly, an adhesive sheet was prepared.

Examples 4 to 6, Comparative Example 4 The composition of Example 4 was the same as that of Example 1, Example 5 was the composition ratio of Composition 2 shown in Table 1, and Example 6 was the composition ratio of Table 1. An adhesive sheet was prepared in the same manner as in Example 1 except that each composition was blended so as to have the composition ratio of Composition 3 shown and Comparative Example 4 had the composition ratio of Composition 4 shown in Table 1.

Example 7, Comparative Example 5 An adhesive sheet was prepared in the same manner as in Example 1 except that the adhesive sheet was formed into the shape or form shown in Table 5. Further, as a pretreatment for workability, the product was dried under reduced pressure under a condition of 133 Pa, and then sealed and packaged.

The evaluation methods used in Examples and Comparative Examples will be described below.

[Adhesion] Polyimide film (75 μm)
m: An adhesive sheet was laminated on “Upilex 75S” manufactured by Ube Industries, Ltd. at 40 ° C. and 1 MPa. Then, SUS304 having a thickness of 0.35 mm was laminated on the above-mentioned polyimide film by an adhesive sheet surface.
After further laminating under the conditions of 30 ° C. and 1 MPa, heat treatment was sequentially performed in an air oven at 100 ° C. for 1 hour, 150 ° C. for 1 hour, and an evaluation sample was prepared.

After slitting the polyimide film to a width of 5 mm, the polyimide film having a width of 5 mm was peeled off at a speed of 50 mm / min in a 90 ° direction, and the adhesive force at that time was measured.

[Reflow Resistance] A 50 μm thick adhesive sheet was placed on a 30 mm square semiconductor connection substrate on which a simulated pattern having a conductor width of 100 μm and a distance between conductors of 100 μm was formed.
After laminating under the conditions of 0 ° C. and 1 MPa, 30 mm × 0.25 mm thick SUS304 was placed on the adhesive sheet for 15 minutes.
Crimping was performed under the conditions of 0 ° C. and 75 MPa. Then 150
The composition was cured at 2 ° C. for 2 hours to prepare a sample for evaluating reflow resistance.

[0048] Twenty 30mm □ samples were prepared at 85 ° C / 85
% RH for 12 hours. 23
The film was subjected to IR reflow at 0 ° C. for 10 seconds, and the peeled state was observed with an ultrasonic short wound machine.

[Protective Film Peeling Force] In the case of a protective film which is peeled off first and has a small peeling force, an adhesive sheet having a width of 30 mm is attached to a stainless steel plate with a double-sided tape, and a speed of 300 mm / min in a 90 ° direction. And the peeling force at that time was measured. On the other hand, in the case of a protective film which is finally peeled with a large peeling force, the protective film which is peeled first with a low peeling force is peeled off from the adhesive sheet having a width of 30 mm, and the adhesive layer is bonded to a stainless steel plate with a double-sided tape. The film was peeled at a speed of 300 mm / min in the 90 ° direction, and the peeling force at that time was measured.

[Evaluation of adhesive sheet warpage] Both sides 150 m
After removing the static electricity on the surface of the adhesive sheet having a length of m on a flat glass plate, the adhesive sheet is allowed to stand, and the height of the square is measured.
The average value of the heights of the four corners at that time was defined as the adhesive sheet warpage amount.

[Evaluation of workability] 0.35 mm thick, 50 m wide
m, SUS304 with a length of 125 mm, 30
Under the conditions of ° C / 70% RH, the width was 40 m, which was made to absorb moisture for 96 hours.
m at 40 ° C., 0.1 MPa, speed 3
Laminating was performed under the condition of m / min to prepare a sample for processability evaluation.

The occurrence of defects such as air bubbles between the adhesive layer of the 20 samples and the SUS plate was visually observed and observed with a microscope.

[0051]

[Table 1]

[0052]

[Table 2]

The state of the adhesive sheet was evaluated as ○ = good without warp or wrinkle, Δ = slightly good, × = impossible or unstable. As is clear from the results in Table 2, the adhesive sheet for a semiconductor device obtained by the present invention can realize a form as an adhesive sheet and has excellent workability. On the other hand, Comparative Examples 1 and 2 in which the constitutions of the adhesive layer thickness and the protective film thickness of the present invention were not observed, and Comparative Example 3 in which the material of the protective film was not a polyester film having high heat resistance, was used as an adhesive sheet. It turns out that a form cannot be realized.

[0054]

[Table 3]

[0055]

[Table 4]

As is clear from the results shown in Tables 3 and 4, the adhesive sheet for a semiconductor device obtained by the present invention has high adhesive strength and excellent reflow resistance and workability. Further, the adhesive sheet for a semiconductor device using the protective film layer of the present invention has a large protective film peeling force. on the other hand,
Comparative Example 4, which does not use the thermosetting adhesive and the protective film layer of the present invention, is also inferior in reflow resistance and protective film peeling force. In addition, when a protective film that had not been subjected to a silicide treatment was used, peeling was not possible, and the peeling force could not be measured.

[0057]

[Table 5]

As is clear from the results shown in Table 5, the adhesive sheet for a semiconductor device obtained by the present invention has excellent adhesiveness and workability. Comparative Example 5 in which the adhesive sheet of the present invention was not in the form of a roll and was not hermetically packaged after drying under reduced pressure, was inferior in workability.

[0059]

According to the present invention, an adhesive sheet for a semiconductor device having excellent reflow resistance and workability is industrially provided. A semiconductor device for surface mounting is provided by the adhesive composition for a semiconductor device of the present invention. Can be improved in reliability.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of one embodiment of a BGA semiconductor device processed using an adhesive sheet for a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a semiconductor integrated circuit connection substrate before being connected to a semiconductor integrated circuit, which is processed using the semiconductor device adhesive sheet of the present invention.

FIG. 3 is a perspective view of one embodiment of a pattern tape (TAB tape) constituting a substrate for connecting a semiconductor integrated circuit.

FIG. 4 is a cross-sectional view of one embodiment of the adhesive sheet for a semiconductor device of the present invention.

FIG. 5 is a cross-sectional view of one embodiment of a component of a substrate for connecting a semiconductor integrated circuit processed using the adhesive sheet for a semiconductor device of the present invention.

[Explanation of symbols]

1. 1. Semiconductor integrated circuit Gold bumps 3,11,17. Flexible insulator layer 4, 12, 18. Adhesive layer constituting wiring board layer 5, 13, 21. Conductors for connecting semiconductor integrated circuits 6, 14, 23. Adhesive layer composed of adhesive composition of the present invention 7,15. Layer in which no conductor pattern is formed 8,16. Solder resist 9. Solder ball 10. Sealing resin 19. Sprocket hole 20. Device hole 22. Conductor part for solder ball connection 24. Protective film layer constituting the adhesive sheet of the present invention

Claims (13)

[Claims] 1. An adhesive sheet for a semiconductor device having a laminate comprising at least one protective film layer and an adhesive layer, wherein the thickness of the adhesive layer is in the range of 10 to 250 μm. Adhesive sheet for semiconductor devices. 2. The protective film has a thickness of 10 μm to 200 μm.
2. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive sheet is in a range of m. 3. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive sheet for a semiconductor device is supplied in a roll form, dried under reduced pressure, and then hermetically sealed by heat sealing. 4. An adhesive has a protective film layer on both sides, and the peeling force of each protective film layer from the adhesive layer is F.
_{1, F 2 (F 1>} F 2) and the time, the adhesive sheet for a semiconductor device according to claim 1, characterized in that the F ₁ -F ₂ ≧ 5Nm ^-1. 5. The adhesive sheet for a semiconductor device according to claim 1, wherein the surface of the protective film layer is subjected to a release treatment. 6. The adhesive sheet for a semiconductor device according to claim 5, wherein the surface of the protective film layer is subjected to a release treatment with silicone. 7. The adhesive sheet for a semiconductor device according to claim 1, wherein the protective film layer is a polyester film. 8. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive composition constituting the adhesive layer contains at least one or more of a thermoplastic resin and a thermosetting resin as essential components. . 9. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive composition constituting the adhesive layer contains a copolymer containing butadiene as an essential copolymer component. 10. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive composition constituting the adhesive layer contains butadiene as an essential copolymer component and a copolymer having a carboxyl group. . 11. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive composition constituting the adhesive layer contains an epoxy resin and / or a phenol resin. 12. The semiconductor device adhesive sheet according to claim 1, wherein the protective film layer, the adhesive layer, and the metal plate are laminated in this order, and the material of the protective film is a polyester film. Parts of a substrate for connecting semiconductor integrated circuits. 13. The semiconductor adhesive sheet according to claim 1, comprising at least one wiring board layer comprising an insulator layer and a conductor pattern, a layer on which no conductor pattern is formed, and at least one adhesive layer. Semiconductor device created using