JPH10178053A - Adhesive composition for semiconductor device and adhesive sheet for semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate balancing of the modulus of elasticity and the coefficient of linear expansion with respect to an adhesive force, by combining thermoplastic resin and thermosetting resin so as to control the temperature dependence of the modulus of elasticity and the coefficient of linear expansion. SOLUTION: An adhesive composition, forming an adhesive layer 6 of a semiconductor integrated circuit board having at least one layer each of a wiring board layer including an insulating layer 3 and a conductor pattern, a layer 7 in which no conductor pattern is formed, and the adhesive layer 6, contains at least one type of thermoplastic resin and at least one type of thermosetting resin, as an essential condition. This adhesive composition, within a temperature range of -50 to 150 deg.C after thermosetting, has a storage modulus of preferably 0.1 to 10000MPa, and more preferably 1 to 5000MPa, and a coefficient of linear expansion of preferably 0.1×10<-5> to 50×10<-5> deg.C<-1> and more preferably 1 to 30×10<-5> deg.C<-1> .

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive composition for forming a substrate (interposer) for connecting a semiconductor integrated circuit used when mounting and packaging a semiconductor integrated circuit and a semiconductor device using the same. It relates to an adhesive sheet. More specifically, a ball grid array (BG
A), a wiring board layer composed of an insulator layer and a conductor pattern constituting a substrate for connecting a semiconductor integrated circuit used in a land grid array (LGA) and a pin grid array (PGA) method, for example, a metal reinforcing plate (stiffener)
Adhesion between layers where conductor patterns such as etc. are not formed,
The present invention also relates to an adhesive composition having a function of relieving thermal stress generated between respective layers due to a temperature difference, and an adhesive sheet for a semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor integrated circuit (IC) package, a dual in-line package (DIP),
Package forms such as a small outline package (SOP) and a quad flat package (QFP) have been used. However, with the increase in the number of pins of the IC and the miniaturization of the package, the limit of the QFP that can increase the number of pins is approaching its limit. This is due to the difficulty in maintaining the flatness of the leads and the difficulty in obtaining solder printing accuracy on the printed circuit board, particularly when mounting on a printed circuit board.
Therefore, in recent years, BGA method, LGA method, PGA method and the like have been put to practical use as means for increasing the number of pins and reducing the size.
Above all, the BGA method has attracted attention because of its low cost, light weight, and thinness due to the use of plastic materials.

FIG. 1 shows an example of the BGA system. The BGA method is characterized in that solder balls almost corresponding to the number of pins of an IC are provided on a grid (grid array) as external connection portions of a semiconductor integrated circuit connection substrate to which the IC is connected. The connection to the printed circuit board is performed by placing the solder ball surface on the conductor pattern of the printed circuit board on which the solder is already printed so as to match the conductor pattern, and melting the solder by reflow. The greatest feature is that since the surface of the substrate for connecting a semiconductor integrated circuit can be used, more terminals can be arranged in a smaller space as compared with a package such as QFP which can use only peripheral sides. A chip scale package (CSP) has further advanced this miniaturization function.
Due to their similarity, they may be referred to as micro BGA (μ-BGA). The present invention relates to a CS having these BGA structures.
Applicable to P.

On the other hand, the BGA method has the following problems. (A) maintaining the flatness of the solder ball surface; (b) improving the heat dissipation; (c) mitigating the thermal stress applied to the solder ball during temperature cycling and reflow; (d) higher due to the large number of reflows Requires reflow resistance. As a method of improving these, a method of laminating a material such as a metal plate for reinforcement, heat radiation, and electromagnetic shielding on a substrate for connecting a semiconductor integrated circuit is generally used. In particular, the insulating substrate layer for connecting the IC and the wiring board layer composed of the conductor pattern have a TA
This is important when a B tape or a flexible printed circuit board is used. For this reason, the substrate for connecting a semiconductor integrated circuit includes an insulator layer 1 for connecting an IC as illustrated in FIG.
A layer 15 on which no conductor pattern is formed, such as a wiring board layer composed of the conductor pattern 1 and the conductor pattern 13, a reinforcing plate (stiffener), a heat sink (heat spreader), and a shield plate;
And at least one adhesive layer 14 for laminating them. These semiconductor integrated circuit connection substrates are preliminarily prepared by laminating or applying and drying the adhesive composition in a semi-cured state on either the wiring board layer or the layer where the conductor pattern is not formed, In general, they are formed by laminating in a process before connecting ICs, curing by heating, and molding.

[0005] From the above points, the following characteristics are required as the characteristics required of the adhesive layer 14. (A) high adhesive strength that does not peel off even under reflow conditions (230 ° C. or higher),
(B) To reduce thermal stress applied between dissimilar materials such as a wiring board layer and a reinforcing plate during a temperature cycle or reflow,
Moderate elastic modulus and linear expansion coefficient characteristics, (c) easy workability that enables low-temperature, short-time bonding and heating and curing, and (d) insulating properties when laminated on wiring.

[0006] From such a viewpoint, conventionally, a thermoplastic resin or a silicone elastomer (Japanese Patent Publication No.
-50448) and the like.

[0007]

However, it has been difficult to balance, among the above-mentioned properties, an appropriate elastic modulus and a linear expansion coefficient property with respect to the adhesive strength in particular. That is, in the conventional adhesive composition, when the adhesive strength is improved, the elastic modulus at a high temperature is reduced, and thus, a sufficient property is not necessarily obtained as a whole.

[0008] In general, it is possible to increase the breaking energy by lowering the elastic modulus of the adhesive, thereby improving the adhesive force.
There is a problem that the adhesive softens under high humidity, and the reflow resistance and the adhesive strength at high temperature and high humidity decrease. On the other hand, in order to improve reflow resistance and adhesion at high temperature and high humidity,
Increasing the degree of crosslinking of the adhesive is not preferred because the adhesive is liable to brittle fracture and the internal stress is increased due to curing shrinkage, which lowers the adhesive strength. Furthermore, the effect of relaxing the thermal stress caused by the temperature difference is also lost.

The present invention solves the above problems and provides a novel adhesive composition for semiconductor devices excellent in processability, adhesive strength, insulation reliability and durability, and an adhesive sheet for semiconductor devices using the same. The purpose is to provide.

[0010]

Means for Solving the Problems In order to achieve the above object, the present inventors have made intensive studies on the cured physical properties of the adhesive component of the adhesive composition for semiconductor devices. A semiconductor suitable for a substrate for connecting semiconductor integrated circuits with excellent adhesive strength and thermal stress relaxation effect by skillfully combining conductive resins and moderately controlling the temperature dependence of the elastic modulus and linear expansion coefficient. The inventors have found that an adhesive composition for a device can be obtained, and have accomplished the present invention.

That is, the present invention provides a semiconductor having at least one layer of (A) a wiring board layer comprising an insulator layer and a conductor pattern, (B) a layer having no conductor pattern formed thereon, and (C) an adhesive layer. (C) An adhesive composition for a semiconductor device forming an adhesive layer of an integrated circuit substrate, wherein the adhesive composition contains at least one or more of a thermoplastic resin and a thermosetting resin as essential components. An adhesive composition for a semiconductor device, and an adhesive sheet for a semiconductor device using the same.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION The substrate for connecting a semiconductor integrated circuit according to the present invention is for connecting a semiconductor integrated circuit (bare chip) which has been separated after a device is formed on a semiconductor substrate such as silicon. (A) a wiring board layer comprising an insulator layer and a conductor pattern, (B) a layer having no conductor pattern formed thereon, and (C) an adhesive layer comprising the adhesive composition of the present invention, each having at least one or more layers. If so, the shape, material, and manufacturing method are not particularly limited. Therefore, the most basic structure is A / C / B, but this also includes a multilayer structure such as A / C / B / C / B.

(A) is a layer having a conductor pattern for connecting an electrode pad of a bare chip to the outside of a package (a printed circuit board or the like). The conductor pattern is formed on one or both sides of an insulator layer. is there. The insulator layer referred to here is made of a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or a composite material such as an epoxy resin impregnated glass cloth, and has a thickness of 10%. ~ 125μ
An insulating film having a flexibility of m, a ceramic substrate of alumina, zirconia, soda glass, quartz glass, or the like is suitable, and a plurality of layers selected from these may be laminated and used. If necessary, the insulator layer may be subjected to surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical surface roughening, and easy adhesion coating treatment. The formation of the conductor pattern is generally performed by either the subtractive method or the additive method, but any of them may be used in the present invention. In the subtractive method, a metal plate such as a copper foil is adhered to the insulator layer with an insulating adhesive (the adhesive composition of the present invention can also be used), or the metal plate is provided with the insulator layer. A pattern is formed by stacking precursors and etching a material prepared by a method of forming an insulator layer by heat treatment or the like by a chemical solution treatment. Specific examples of the material here include copper-clad materials for rigid or flexible printed circuit boards and TAB.
An example is a tape (FIG. 3). On the other hand, in the additive method, a conductor pattern is directly formed on the insulator layer by electroless plating, electrolytic plating, sputtering, or the like. In any case, the formed conductor may be plated with a metal having high corrosion resistance to prevent corrosion. Via holes may be formed in the wiring board layer (A) formed as described above, if necessary, and the conductor patterns formed on both sides by plating may be connected by plating.

(B) is a uniform layer substantially independent of (A) or (C), for reinforcing and dimensionally stabilizing a substrate for connecting a semiconductor integrated circuit (generally referred to as a reinforcing plate or a stiffener). , Electromagnetic shielding between outside and IC, I
Heat dissipation of C (generally referred to as a heat sink, heat spreader, heat sink, etc.), imparting flame retardancy to a substrate for connecting a semiconductor integrated circuit, imparting discriminability by the shape of the substrate for connecting a semiconductor integrated circuit, etc. It carries the function. Therefore, the shape may be not only a layer shape but also a three-dimensional shape having a fin structure for heat dissipation. In addition, any insulator or conductor may be used as long as it has the above function, and the material is not particularly limited. Examples of metals include copper, iron, aluminum, gold, silver, nickel, and titanium.
Examples of the inorganic material include alumina, zirconia, soda glass, quartz glass, carbon, and the like, and examples of the organic material include polyimide, polyamide, polyester, vinyl, phenol, and epoxy polymer materials.
Further, a composite material obtained by combining these can also be used.
For example, those having a shape in which thin metal plating is formed on a polyimide film, those having conductivity by kneading carbon into a polymer, and those having a metal plate coated with an organic insulating polymer can be exemplified. Further, it is not limited that various surface treatments are performed in the same manner as in the above (A).

(C) is an adhesive layer mainly used for adhesion between (A) and (B). However, the use of (A) or (B) for bonding to another member (for example, an IC or a printed board) is not limited at all. This adhesive layer is usually laminated in a semi-cured state on the semiconductor integrated circuit connection substrate, and before or after lamination, 30 to 20 times.
The degree of curing can be adjusted by performing a pre-curing reaction at a temperature of 0 ° C. for an appropriate time. This adhesive layer is an adhesive composition for a semiconductor device of the present invention (hereinafter referred to as an adhesive composition).
And the adhesive composition after heating and curing is -50
In the temperature range of ~ 150 ° C, the storage modulus is preferably 0.1 to 10000 MPa, more preferably 1 to 5 MPa.
000 MPa and a coefficient of linear expansion of preferably
1 × 10 ⁻⁵ to 50 × 10 ⁻⁵ ° C. ⁻¹ , more preferably 1 to
30 × 10 ⁻⁵ ° C. ⁻¹ . When the storage elastic modulus is less than 0.1 MPa, the strength of the adhesive is low, and the semiconductor integrated circuit connection substrate is deformed during use of the device on which the semiconductor device is mounted. Absent. If it exceeds 10,000 MPa, the effect of relieving thermal stress is small, and warpage of the substrate for connecting a semiconductor integrated circuit, peeling between layers, and solder ball cracks are not preferable. When the coefficient of linear expansion is less than 0.1 × 10 ⁻⁵ ° C. ⁻¹ , the effect of relaxing thermal stress is small, which is not preferable. 50x
When the temperature exceeds 10 ^-5 ° C ^-1 , the adhesive itself causes thermal stress, which is even more undesirable.

[0016] The adhesive composition may be cured by heating.
The breaking energy per unit area at 25 ° C. (hereinafter referred to as breaking energy) is 5 × 10 ⁵ m ⁻¹ or more, preferably 8 × 10 ⁵ N m ⁻¹ or more, more preferably 10 × 10 ⁵ N m ⁻¹ or more.
It is preferable that it is not less than × 10 ⁵ N m ⁻¹ . It is considered that the breaking energy has a correlation with the adhesive strength in the cohesive failure mode of the adhesive layer. The fracture energy is determined by the area under the stress-strain curve in the tensile test. If the breaking energy is lower than 5 × 10 ⁴ N m ⁻¹ , the adhesive strength is undesirably reduced.

Further, the adhesive composition has a breaking strength of 1 × 10 ² N cm ⁻² or more, preferably 5 × 10 ² N cm ⁻² or more, more preferably 1 × 10 ² N cm ⁻² or more at 25 ° C. after heat curing. 10 ³ N cm ^-2 or more and elongation at break of 5
It is suitable that it is 0% or more, preferably 100% or more, and more preferably 150% or more. The breaking strength and the breaking elongation are determined from the stress and elongation when the sample breaks in the tensile test. The breaking strength is equal to the stress at break. When the elongation at break is the initial sample length L and the elongation at break ΔL, the elongation at break is (ΔL / L) × 100). When the breaking strength is lower than 1 × 10 ² N cm ⁻² or when the breaking elongation is lower than 50%, the adhesive strength is lowered and the thermal stress relaxation effect is lowered, which is not preferable.

The thickness of the adhesive layer can be appropriately selected depending on the relationship between the elastic modulus and the coefficient of linear expansion, but is preferably 2 to 500 μm, more preferably 20 to 200 μm.

It is essential that the adhesive composition of the present invention contains at least one type of thermoplastic resin and at least one type of thermosetting resin as essential components, but the type is not particularly limited. Thermoplastic resin has functions such as adhesion, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. Thermosetting resin has heat resistance, insulation at high temperatures, chemical resistance, and adhesion. It is necessary to achieve a balance between physical properties such as strength of the agent layer.

As the thermoplastic resin, acrylonitrile-butadiene copolymer (NBR), acrylonitrile-
Butadiene rubber-styrene resin (ABS), polybutadiene, styrene-butadiene-ethylene resin (SEB
S), acrylic, polyvinyl butyral, polyamide,
Known materials such as polyester, polyimide, polyamideimide, and polyurethane are exemplified. Further, these thermoplastic resins may have a functional group capable of reacting with a thermosetting resin described below. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. These functional groups are preferable because the bond with the thermosetting resin is strengthened and the heat resistance is improved. As the thermoplastic resin, a copolymer containing butadiene as an essential copolymer component is particularly preferred from the viewpoint of adhesiveness to the material (B), flexibility, and an effect of relaxing thermal stress, and various types can be used. Particularly, acrylonitrile-butadiene copolymer (NBR), styrene-butadiene-ethylene resin (SEBS), styrene-butadiene resin (SBS), and the like are preferable from the viewpoints of adhesion to metals, chemical resistance, and the like. Further, a copolymer containing butadiene as an essential copolymer component and having a carboxyl group is more preferable. For example, NBR (NBR-C) and SEB
S (SEBS-C), SBS (SBS-C) and the like. Examples of NBR-C include acrylonitrile and butadiene copolymerized in a molar ratio of about 10/90 to 50/50, in which the end groups of a copolymer rubber are carboxylated, or acrylonitrile, butadiene and acrylic acid, maleic acid, etc. And a terpolymer rubber of a carboxyl group-containing polymerizable monomer. Specifically, PN
R-1H (Nippon Synthetic Rubber Co., Ltd.), "Nipol" 10
72J, "Nipole" DN612, "Nipole" DN6
31 (Nippon Zeon Co., Ltd.), "Hiker" CTB
N (manufactured by BF Goodrich) and the like. SEBS
MX-73 (manufactured by Asahi Kasei Corporation) as C
-C is D1300X (manufactured by Shell Japan Co., Ltd.)
Can be exemplified.

Examples of the thermosetting resin include known resins such as epoxy resin, phenol resin, melamine resin, xylene resin, furan resin and cyanate ester resin. Particularly, epoxy resin and phenol resin are preferable because of their excellent insulating properties.

The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but is not limited to bisphenol F, bisphenol A, bisphenol S,
Diglycidyl ethers such as resorcinol, dihydroxynaphthalene, dicyclopentadiene diphenol, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, cyclohexane epoxide, etc. Alicyclic epoxy, and the like. Further, it is effective to use a halogenated epoxy resin, particularly a brominated epoxy resin, for imparting flame retardancy. At this time, although the use of only the brominated epoxy resin can impart flame retardancy, the heat resistance of the adhesive is greatly reduced, so that it is more effective to use a mixed system with a non-brominated epoxy resin. Examples of the brominated epoxy resin include a copolymerized epoxy resin of tetrabromobisphenol A and bisphenol A, or "BR
EN "-S (manufactured by Nippon Kayaku Co., Ltd.) and the like. These brominated epoxy resins are used in combination of two or more kinds in consideration of bromine content and epoxy equivalent. May be.

As the phenol resin, any known phenol resin such as a novolak phenol resin and a resol phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, and p-phenylphenol; cyclic alkyl-modified phenols such as terpene and dicyclopentadiene; and heterocycles such as nitro, halogen, cyano, and amino groups. Those having a functional group containing atoms, naphthalene, those having a skeleton such as anthracene,
Examples of resins include polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

The addition amount of the thermosetting resin is 10
5-400 parts by weight, preferably 50-400 parts by weight per 0 parts by weight
200 parts by weight. When the addition amount of the thermosetting resin is less than 5 parts by weight, the elastic modulus at a high temperature is remarkably reduced, and the semiconductor integrated circuit connection substrate is deformed during use of the device on which the semiconductor device is mounted, and is handled in a processing step. This is not preferable because of lack of workability. If the addition amount of the thermosetting resin exceeds 400 parts by weight, the modulus of elasticity is high, the coefficient of linear expansion is small, and the effect of relaxing thermal stress is small.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited at all. For example, 3,3'5,5'-tetramethyl-4,4'-diaminodiphenylmethane,
3,3'5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-diethyl-4,4'-diaminodiphenylmethane, 3,3
'-Dichloro-4,4'-diaminodiphenylmethane,
2,2'3,3'-tetrachloro-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfide, 3,3'-diaminobenzophenone, 3,3 '
-Diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminobenzophenone, 3,4,4
Aromatic polyamines such as'-triaminodiphenylsulfone; amine complexes of boron trifluoride such as boron trifluoride triethylamine complex; imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole; Organic acids such as phthalic anhydride and trimellitic anhydride, dicyandiamide and triphenylphosphine can be used. These may be used alone or in combination of two or more. The addition amount is preferably 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive composition.

In addition to the above components, addition of organic or inorganic components such as an antioxidant and an ion scavenger is not limited as long as the properties of the adhesive are not impaired. Examples of fine inorganic components include aluminum hydroxide, magnesium hydroxide, metal hydroxides such as calcium aluminate hydrate, silica, alumina, zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, and magnesium oxide. Titanium oxide, iron oxide, cobalt oxide, chromium oxide, metal oxides such as talc, inorganic salts such as calcium carbonate, aluminum, gold, silver, nickel, iron, metal fine particles such as, or carbon black, glass, Examples of the organic component include crosslinked polymers such as styrene, NBR rubber, acrylic rubber, polyamide, polyimide, and silicone. These may be used alone or in combination of two or more. The average particle diameter of the fine particle component is preferably 0.2 to 5 μ in consideration of dispersion stability. Also, the compounding amount is suitably 2 to 50 parts by weight of the whole adhesive composition.

The adhesive sheet for a semiconductor device of the present invention is:
The adhesive composition for a semiconductor device of the present invention is used as an adhesive layer, and has at least one or more peelable protective film layers. For example, a two-layer configuration of a protective film layer / adhesive layer or a three-layer configuration of a protective film layer / adhesive layer / protective film layer corresponds to this.

The protective film layer referred to here is (A) a wiring board layer (TAB) composed of an insulator layer and a conductor pattern.
Before bonding the adhesive layer to a layer (stiffener or the like) on which no conductive pattern is formed (tape or the like), the adhesive layer is not particularly limited as long as it can be peeled off without impairing the form and function of the adhesive layer. Plastic films such as polyolefin, polyphenylene sulfide, polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, polyvinyl butyral, polyvinyl acetate, polyvinyl alcohol, polycarbonate, polyamide, polyimide, polymethyl methacrylate, etc. Alternatively, a film coated with a release agent such as a fluorine compound, a paper laminated with such a film, a paper impregnated or coated with a resin having a release property, and the like can be given.

When protective film layers are provided on both sides of the adhesive layer, when the peeling force of each protective film layer with respect to the adhesive layer is F ₁ , F ₂ (F ₁ > F ₂ ), F ₁ -F ₂
Is preferably 5 N m ^-1 or more, more preferably 15 N m ^-1 or more.
m ^-1 or more is required. If F ₁ -F ₂ is less than 5 N m ⁻¹ , it is not preferable because which protective film layer side the peeled surface is not stable, and it becomes a serious problem in use. Further, the peeling forces F ₁ and F ₂ are preferably both 1 to 1.
200 N m ^-1, more preferably 3 to 100 nm ^-1
It is. If it is lower than 1 N m ^{-1, the} protective film layer will fall off, and if it exceeds 200 N m ^-1 , peeling is unstable and the adhesive layer may be damaged, which is not preferable.

Next, examples of the adhesive composition of the present invention and a method for producing an adhesive sheet for a semiconductor device using the same will be described.

(A) A coating obtained by dissolving the adhesive composition of the present invention in a solvent is applied onto a polyester film having releasability and dried. It is preferable to apply the adhesive layer so that the film thickness is 10 to 100 μm. Drying condition is 10
0 to 200 ° C for 1 to 5 minutes. The solvent is not particularly limited, but aromatic solvents such as toluene, xylene and chlorobenzene, ketones such as methyl ethyl ketone and methyl isobutyl ketone, and aprotic polar solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone alone or a mixture thereof are preferred. It is.

(B) The adhesive sheet of the present invention is obtained by laminating a polyester or polyolefin-based protective film layer having a releasability having a lower peel strength than the above to the film of (a). When the thickness of the adhesive is further increased, the adhesive sheet may be laminated plural times. After lamination, the degree of curing may be adjusted by heat treatment at 40 to 70 ° C. for about 20 to 200 hours.

[0033]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

Evaluation method (1) Preparation of evaluation pattern tape: An 18 μm electrolytic copper foil was laminated on a TAB adhesive tape (# 7100, manufactured by Toray Industries, Inc.) at 140 ° C. and 0.1 MPa. Then, in an air oven at 80 ° C for 3 hours, 100
The tape was heated and cured sequentially at 150 ° C. for 5 hours at 150 ° C. to prepare a TAB tape with a copper foil. A photoresist film was formed on the copper foil surface of the obtained TAB tape with copper foil, etching, and resist peeling were performed by a conventional method to prepare a pattern tape sample for evaluation.

(2) Embedding property of conductor pattern and cure foaming: A pure copper plate having a thickness of 100 mm and having an adhesive layer made of an adhesive composition and having a thickness of 0.1 mm was used as a conductor of the pattern tape for evaluation of (1). 130 ° C, 0.1
After laminating under the condition of MPa, 1
Heat curing treatment was performed at 50 ° C. for 2 hours. This was immersed in an etching solution containing ferric chloride as a main component to dissolve the pure copper plate. Finally, the exposed adhesive layer was observed under a microscope to evaluate the foaming during curing and the embedding property of the conductor pattern.

(3) Peeling strength: A pure copper plate with an adhesive layer similar to that of (2) was applied to a polyimide film (“UPILEX” 75S manufactured by Ube Industries, Ltd.) at 130 ° C. and 0.1 MPa.
After laminating under the conditions of a, 150
Heat curing treatment was performed at 2 ° C. for 2 hours. The obtained polyimide film of the sample was cut so as to have a width of 2 mm, and peeled in a 90 ° direction at a speed of 50 mm / min, and the peeling force at that time was measured.

(4) Insulation reliability: Conductor width 100 μm, distance between conductors 100 μm of pattern tape for evaluation in (1)
On the conductor pattern surface of the sample for evaluating the comb shape,
A pure copper plate with an adhesive layer similar to that of (2) was heated at 130 ° C.
After laminating under the condition of 0.1 MPa, a heat curing treatment was performed in an air oven at 150 ° C. for 2 hours. Using the obtained sample, in a state where a voltage of 100 V was continuously applied in a constant temperature and humidity chamber of 85 ° C. and 85% RH, the resistance value was measured immediately after the measurement and after 200 hours.

(5) Solder heat resistance: A 30 mm square sample prepared by the above method (3) was conditioned for 48 hours in an atmosphere of 85 ° C. and 85% RH, and immediately placed on a solder bath for 60 seconds. The highest temperature without floating, swelling and peeling was measured.

(6) Heat cycle test: A 30 mm square sample prepared by the above method (3) was subjected to a heat cycle tester (PL-3, manufactured by Tabai Espec Co., Ltd.) at -20.
600 cycles of treatment were carried out at a temperature of 1 to 100 ° C and a minimum and maximum temperature of 1 hour each, and the occurrence of peeling was evaluated.

(7) Measurement of Storage Elasticity: An adhesive sheet was laminated to a thickness of 500 μm, and post-cured at 150 ° C. for 2 hours to prepare a sample. This is measured by a dynamic viscoelasticity measuring device (RHEOVIBRON-
DDV-II / III-EA, manufactured by Orientec Co., Ltd.) at a frequency of 35 Hz and a heating rate of 2 ° C. min ⁻¹ .

(8) Measurement of linear expansion coefficient: 5 as in (7)
Three samples having a thickness of 00 μm were laminated. This was heated in a compression mode at 2 ° C. min ⁻¹ by a micro constant load thermal dilatometer (manufactured by Rigaku Denki Co., Ltd.), and the linear expansion coefficient was determined from the linear expansion coefficient at a reference temperature of 25 ° C.

[0042] (9) Tensile test: A sample of sample length 40mm with 100μm of thickness was produced in the same manner as (7), a tensile tester (UCT-100 type, Ltd. Orientec) 50 mm min at ^{- A} tensile test was performed at a speed of ¹ to record a stress-strain curve up to fracture, and the fracture energy was determined from the area under the curve.

(10) Protective film layer peeling force: In the case of a protective layer having a low peeling force, an adhesive sheet having a width of 30 mm is adhered to a stainless steel plate with a double-sided tape, and peeled in a 90 ° direction at a speed of 300 mm / min. The peeling force at that time was measured. On the other hand, in the case of a protective layer having a high peeling force, the width is 30 m.
The protective film layer having a low peeling force is peeled off from the adhesive sheet having a thickness of m, the adhesive layer side is adhered to a stainless steel plate with a double-sided tape, and peeled in a 90 ° direction at a speed of 300 mm / min, and the peeling force at that time is measured. did.

Example 1 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H), brominated epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epicoat" 50)
50, bromine content 49%, epoxy equivalent 395), non-brominated epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epico-
834, epoxy equivalent 250), 4,4′-diaminodiphenylsulfone, and methyl ethyl ketone of the same weight as the dispersion were added so as to have the composition ratios in Table 1, respectively.
The mixture was stirred and mixed at 30 ° C. to prepare an adhesive solution. This adhesive solution was applied with a bar coater to a 25 μm thick polyethylene terephthalate film (“Film Vina” NSC manufactured by Fujimori Kogyo Co., Ltd.) with a silicone release agent so as to have a dry thickness of about 50 μm. Dry for 5 minutes.
On the other hand, a 25 μm thick silicone release agent with a low release force
Polyethylene terephthalate film (Fujimori Industry Co., Ltd.)
An adhesive layer was formed in the same manner as described above except that “Film Binner” GT) was used to obtain a dry thickness of about 50 μm. The peeling force was NSC (F ₁ )> GT (F ₂ ). Next, these were laminated together with the adhesive surfaces together to prepare an adhesive sheet for a semiconductor device of the present invention having an adhesive thickness of 100 μm. FIG. 6 shows the configuration. This adhesive sheet was laminated on a pure copper plate having a thickness of 0.1 mm under the conditions of 100 ° C. and 0.1 MPa to obtain a pure copper plate with an adhesive layer. The characteristics are shown in Table 2, FIG. 4 and FIG.

Example 2 Spherical silica ("Excelica", manufactured by Tokuyama Corporation) was mixed with toluene, followed by sand milling to prepare a silica dispersion. NBR-C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H), SEBS-C (manufactured by Asahi Kasei Corporation, MX-073), epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd.) Epicoat “828, epoxy equivalent 186), 4,4′-diaminodiphenyl sulfone,
Then, methyl ethyl ketone of the same weight as that of the dispersion was added so as to have the composition ratio shown in Table 1, and the mixture was stirred and mixed at 30 ° C. to prepare an adhesive solution. Using this adhesive solution, a pure copper plate with an adhesive sheet and an adhesive layer was obtained in the same manner as in Example 1. Table 2 shows the characteristics.

Example 3 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H), epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epicoat" 828, epoxy equivalent: 186), phenol novolak resin (manufactured by Gunei Chemical Industry Co., Ltd., PSM4261) ), 4,4'-diaminodiphenylsulfone, triphenylphosphine and methyl ethyl ketone in the same weight as the dispersion, respectively.
And the mixture was stirred and mixed at 30 ° C. to prepare an adhesive solution. Example 1 using this adhesive solution
In the same manner as in the above, an adhesive sheet and a pure copper plate with an adhesive layer were obtained. Table 2 shows the characteristics.

Example 4 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H and BF Goodrich Co., Hiker CTBN 1300X1)
3), brominated epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epicoat" 5050, bromine content 49%, epoxy equivalent: 395), non-brominated epoxy resin (Yukaka Shell Co., Ltd.)
"Epicoat" 157, epoxy equivalent 200)
4,4'-diaminodiphenyl sulfone and a dispersion were added to each of the same weight of methyl ethyl ketone so as to have a composition ratio shown in Table 1, and the mixture was stirred and mixed at 30 ° C to prepare an adhesive solution. Using this adhesive solution, a pure copper plate with an adhesive sheet and an adhesive layer was obtained in the same manner as in Example 1. Table 2 shows the characteristics.

Example 5 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H), SBS-
C (manufactured by Shell Japan K.K., D1300X), brominated epoxy resin (manufactured by Yuka Shell K.K., "Epicoat" 5)
050, bromine content 49%, epoxy equivalent 395), non-brominated epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epico-
G, 180, epoxy equivalent 210), 4,4'-diaminodiphenylsulfone and the same amount of methyl ethyl ketone as the dispersion were added so as to have the composition ratios shown in Table 1, respectively.
The mixture was stirred and mixed at 30 ° C. to prepare an adhesive solution. Using this adhesive solution, a pure copper plate with an adhesive sheet and an adhesive layer was obtained in the same manner as in Example 1. Table 2 shows the characteristics.

Comparative Example 1 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H) and a dispersion were added to each of the same proportions of methyl ethyl ketone so as to have the composition ratio shown in Table 1, followed by stirring and mixing at 30 ° C. to prepare an adhesive solution. Using this adhesive solution, a pure copper plate with an adhesive sheet and an adhesive layer was obtained in the same manner as in Example 1.
Table 2 shows the characteristics.

Comparative Example 2 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. A phenol novolak resin (manufactured by Gunei Chemical Industry Co., Ltd., PSM42) was added to this dispersion.
61), hexamethylenetetramine and methyl ethyl ketone of the same weight as the dispersion were added so as to have the composition ratios shown in Table 1, respectively, and stirred and mixed at 30 ° C. to prepare an adhesive solution. Using this adhesive solution, a pure copper plate with an adhesive sheet and an adhesive layer was obtained in the same manner as in Example 1. Table 2 shows the characteristics.

[0051]

[Table 1]

[0052]

[Table 2]

From the examples and comparative examples in Tables 1 and 2, it can be seen that the adhesive compositions for semiconductor devices obtained by the present invention are excellent in processability, adhesive strength, insulation reliability and durability.

[0054]

Industrial Applicability The present invention industrially provides a novel adhesive composition for semiconductor devices excellent in processability, adhesive strength, insulation reliability and durability, and an adhesive sheet for semiconductor devices using the same. In addition, the semiconductor device adhesive composition of the present invention can improve the economics based on the reliability and processability of the semiconductor integrated circuit connection substrate for high-density mounting and the semiconductor device.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of one embodiment of a BGA type semiconductor device using a semiconductor device adhesive composition and a semiconductor device adhesive sheet of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a substrate for connecting a semiconductor integrated circuit before connecting the semiconductor integrated circuit using the adhesive composition for a semiconductor device of the present invention.

FIG. 3 is a perspective view of one embodiment of a pattern tape (TAB tape) constituting a substrate for connecting a semiconductor integrated circuit.

FIG. 4 is a graph showing the temperature dependence of the storage modulus of the adhesive composition of Example 1 after curing.

FIG. 5 is a diagram showing the temperature dependence of the linear expansion coefficient of the adhesive composition of Example 1 after curing.

FIG. 6 is a cross-sectional view of one embodiment of the adhesive sheet for a semiconductor device of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor integrated circuit 2 Gold bump 3,11,17 Flexible insulating film 4,12,18 Adhesive layer which comprises a wiring board layer 5,13,21 Conductor for connecting a semiconductor integrated circuit 6,14, 23 Adhesive layer composed of the adhesive composition of the present invention 7, 15 Layer on which no conductor pattern is formed 8, 16 Solder resist 9 Solder ball 10 Sealing resin 19 Sprocket hole 20 Device hole 22 Solder ball connection Conductor part 24 Protective film layer constituting adhesive sheet of the present invention

Continuation of the front page (51) Int.Cl. ⁶ Identification code FI C09J 163/00 C09J 163/00 201/00 201/00 H01L 23/12 H01L 23/12 L

Claims (10)

[Claims] 1. A semiconductor integrated circuit connection comprising (A) a wiring board layer comprising an insulator layer and a conductor pattern, (B) at least one layer having no conductor pattern and (C) an adhesive layer. An adhesive composition for a semiconductor device forming an adhesive layer (C) of a substrate, wherein the adhesive composition contains at least one or more of a thermoplastic resin and a thermosetting resin as essential components. Adhesive composition for semiconductor devices. 2. The storage elastic modulus and the linear expansion coefficient after heat curing are 0.1 to 10,000 MPa and 0.1 × 10 ^-5 to 50, respectively, in a temperature range of -50 to 150 ° C.
The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition is in a range of ^{10-5 -1C} . 3. The adhesive composition for a semiconductor device according to claim 1, wherein, after the heat curing, at 25 ° C., the breaking energy is 5 × 10 ⁵ N m ⁻¹ or more. 4. After heating and curing, at 25 ° C., the breaking strength is 1 × 10 ² N cm ⁻² or more and the breaking elongation is 50%.
%. The adhesive composition for a semiconductor device according to claim 1, wherein 5. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains a copolymer containing butadiene as an essential copolymer component. 6. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains butadiene as an essential copolymer component and contains a copolymer having a carboxyl group. 7. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains an epoxy resin and / or a phenol resin. 8. An adhesive sheet for a semiconductor device, comprising the adhesive composition for a semiconductor device according to claim 1 as an adhesive layer and having at least one or more peelable protective film layers. 9. The adhesive sheet for a semiconductor device according to claim 8, wherein the protective film layer is subjected to a release treatment. 10. A protective film layer is provided on both sides of an adhesive layer, and when the peeling force of each protective film layer from the adhesive layer is F ₁ , F ₂ (F ₁ > F ₂ ), F ₁ − F ₂
9. The adhesive sheet for a semiconductor device according to claim 8, wherein ≧ 5 N m ⁻¹ .