JPH10178251A - Board for connecting semiconductor integrated circuit, parts constituting it, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a board having high workability, adhesive force, insulation reliability, and durability by mixing one or more kinds selected thermoplastic resin, a thermosetting resin, and crosslinked polymer particles in the adhesive forming the adhesive layer of the board and, at the same time, to provide parts constituting the board and a semiconductor device. SOLUTION: A particle-dispersed solution is prepared by mixing methylsiloxane- crosslinked polymer particles in a mixed solvent containing toluene and methyl ethyl ketone at a mixing ratio of 1:1 and treating the mixture in a sand mill. Then an adhesive solution is prepared by adding NBR-C, a brominated epoxy resin, a non- brominated epoxy resin, 4,4' diaminodiphenyl sulfone, and methyl ethyl ketone which is added to the same weight as that of the dispersed solution to the dispersed solution and agitating and mixing the solution. The adhesive solution is applied to a polyethylene terephthalate film. On the other hand, and adhesive layer is formed by using the same method except the used of a polyethylene terephthalate film coated with a silicone mold-release agent having a weak peel force. Then the adhesive layer and the polyethylene terephathalate film are put together by sticking their adhesive surfaces to each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit connecting substrate (interposer) used for mounting and packaging a semiconductor integrated circuit, components constituting the same, and a semiconductor device. For more information,
A wiring board layer composed of an insulator layer and a conductor pattern constituting a substrate for connecting a semiconductor integrated circuit used in a ball grid array (BGA), a land grid array (LGA), and a pin grid array (PGA) system, for example, a metal reinforcing plate (Stiffener) and other layers on which no conductor pattern is formed are bonded by an adhesive composition having a function of relaxing thermal stress generated between the layers due to a temperature difference, and are connected to a semiconductor integrated circuit having a laminated structure. The present invention relates to a substrate for use, components constituting the same, and a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor integrated circuit (IC) package, a dual in-line package (DIP),
Package forms such as a small outline package (SOP) and a quad flat package (QFP) have been used. However, with the increase in the number of pins of the IC and the miniaturization of the package, the limit of the QFP that can increase the number of pins is approaching its limit. This is due to the difficulty in maintaining the flatness of the leads and the difficulty in obtaining solder printing accuracy on the printed circuit board, particularly when mounting on a printed circuit board.
Therefore, in recent years, BGA method, LGA method, PGA method and the like have been put to practical use as means for increasing the number of pins and reducing the size.
Above all, the BGA method has attracted attention because of its high possibility of cost reduction, weight reduction and thickness reduction by using plastic materials.

FIG. 1 shows an example of the BGA system. The BGA method is characterized in that solder balls almost corresponding to the number of pins of an IC are provided on a grid (grid array) as external connection portions of a semiconductor integrated circuit connection substrate to which the IC is connected. The connection to the printed circuit board is performed by placing the solder ball surface on the conductor pattern of the printed circuit board on which the solder is already printed so as to match the conductor pattern, and melting the solder by reflow. The greatest feature is that since the surface of the substrate for connecting a semiconductor integrated circuit can be used, more terminals can be arranged in a smaller space as compared with a package such as QFP which can use only peripheral sides. A chip scale package (CSP) has further advanced this miniaturization function.
Due to their similarity, they may be referred to as micro BGA (μ-BGA). The present invention relates to a CS having these BGA structures.
Applicable to P.

On the other hand, the BGA method has the following problems. (A) maintaining the flatness of the solder ball surface; (b) improving the heat dissipation; (c) mitigating the thermal stress applied to the solder ball during temperature cycling and reflow; (d) higher due to the large number of reflows Requires reflow resistance. As a method of improving these, a method of laminating a material such as a metal plate for reinforcement, heat radiation, and electromagnetic shielding on a substrate for connecting a semiconductor integrated circuit is generally used. In particular, the insulating substrate layer for connecting the IC and the wiring board layer composed of the conductor pattern have a TA
This is important when a B tape or a flexible printed circuit board is used. For this reason, the substrate for connecting a semiconductor integrated circuit includes an insulator layer 1 for connecting an IC as illustrated in FIG.
A layer 15 on which no conductor pattern is formed, such as a wiring board layer composed of the conductor pattern 1 and the conductor pattern 13, a reinforcing plate (stiffener), a heat sink (heat spreader), and a shield plate;
And at least one adhesive layer 14 for laminating them. These semiconductor integrated circuit connection substrates are prepared as intermediate products by laminating or applying and drying an adhesive composition in a semi-cured state on either a wiring substrate layer or a layer on which no conductor pattern is formed. In general, it is generally formed by bonding, heating, curing and molding in a process before connecting the ICs.

[0005] From the above points, the following characteristics are required as the characteristics required of the adhesive layer 14. (A) high adhesive strength that does not peel off even under reflow conditions (230 ° C. or higher),
(B) To reduce thermal stress applied between dissimilar materials such as a wiring board layer and a reinforcing plate during a temperature cycle or reflow,
Moderate elastic modulus and linear expansion coefficient characteristics, (c) easy workability that enables low-temperature, short-time bonding and heating and curing, and (d) insulating properties when laminated on wiring.

[0006] From such a viewpoint, conventionally, a thermoplastic resin or a silicone elastomer (Japanese Patent Publication No.
-50448) and the like.

[0007]

However, it has been difficult to balance the thermal stress relaxation effect and the reflow resistance with respect to the adhesive force among the above-mentioned characteristics. That is, in the conventional adhesive composition, when the adhesive strength is improved, the elastic modulus at a high temperature is reduced, and the reflow property is also reduced.

[0008] In general, it is possible to increase the breaking energy by lowering the elastic modulus of the adhesive, thereby improving the adhesive force.
There is a problem that the adhesive softens under high humidity, and the reflow resistance and the adhesive strength at high temperature and high humidity decrease. On the other hand, in order to improve reflow resistance and adhesion at high temperature and high humidity,
Increasing the degree of crosslinking of the adhesive is not preferred because the adhesive is liable to brittle fracture and the internal stress is increased due to curing shrinkage, which lowers the adhesive strength. Furthermore, the effect of relaxing the thermal stress caused by the temperature difference is also lost.

Although a method of using a thermoplastic resin having a high softening point is also conceivable, a high bonding temperature is required when preparing a substrate for connecting a semiconductor integrated circuit, and the wiring substrate layer is damaged, and the dimensional accuracy is reduced. Cause trouble.

The present invention solves such problems and provides a novel substrate for connecting a semiconductor integrated circuit which is excellent in processability, adhesive strength, insulation reliability and durability, a component constituting the substrate, and a semiconductor device. The purpose is to:

[0011]

Means for Solving the Problems In order to achieve the above object, the present inventors have made intensive studies on the cured physical properties of an adhesive layer constituting a substrate for connecting a semiconductor integrated circuit. The present inventors have found that a substrate for connecting a semiconductor integrated circuit, which is excellent in adhesive force and thermal stress relaxation effect, can be obtained by skillfully combining a thermosetting resin and crosslinked polymer particles.

That is, the present invention provides a semiconductor having at least one layer of (A) a wiring board layer composed of an insulator layer and a conductor pattern, (B) a layer having no conductor pattern formed thereon, and (C) an adhesive layer. An integrated circuit connecting substrate, wherein the adhesive composition for forming the adhesive layer (C) contains at least one or more of a thermoplastic resin, a thermosetting resin, and crosslinked polymer particles as essential components. A semiconductor integrated circuit connection substrate, components constituting the substrate, and a semiconductor device.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION The substrate for connecting a semiconductor integrated circuit according to the present invention is for connecting a semiconductor integrated circuit (bare chip) which has been separated after a device is formed on a semiconductor substrate such as silicon. (A) a wiring board layer comprising an insulator layer and a conductor pattern, (B) a layer having no conductor pattern formed thereon, and (C) an adhesive layer comprising the adhesive composition of the present invention, each having at least one or more layers. If so, the shape, material, and manufacturing method are not particularly limited. Therefore, the most basic structure is A / C / B, but this also includes a multilayer structure such as A / C / B / C / B.

(A) is a layer having a conductor pattern for connecting an electrode pad of a bare chip to the outside of a package (a printed circuit board or the like). The conductor pattern is formed on one or both sides of an insulator layer. is there. The insulator layer referred to here is made of a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or a composite material such as an epoxy resin impregnated glass cloth, and has a thickness of 10%. ~ 125μ
An insulating film having a flexibility of m, a ceramic substrate of alumina, zirconia, soda glass, quartz glass, or the like is suitable, and a plurality of layers selected from these may be laminated and used. If necessary, the insulator layer may be subjected to surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical surface roughening, and easy adhesion coating treatment. The formation of the conductor pattern is generally performed by either the subtractive method or the additive method, but any of them may be used in the present invention. In the subtractive method, a metal plate such as a copper foil is adhered to the insulator layer with an insulating adhesive (the adhesive composition of the present invention can also be used), or the metal plate is provided with the insulator layer. A pattern is formed by stacking precursors and etching a material prepared by a method of forming an insulator layer by heat treatment or the like by a chemical solution treatment. Specific examples of the material here include copper-clad materials for rigid or flexible printed circuit boards and TAB.
An example is a tape (FIG. 3). In particular, at least one layer or more of a polyimide film is used as an insulator layer, and a wiring board layer made by a subtractive method using a copper-clad material for flexible printed circuit boards or a TAB tape using a copper foil as a conductor pattern has a fine pattern. It is preferable because not only has a good track record in forming, but also it can be continuously produced in the form of a long film, so that it is economical.

On the other hand, in the additive method, a conductor pattern is directly formed on the insulator layer by electroless plating, electrolytic plating, sputtering or the like. In any case, the formed conductor may be plated with a metal having high corrosion resistance to prevent corrosion. Via holes may be formed in the wiring board layer (A) formed as described above, if necessary, and the conductor patterns formed on both sides by plating may be connected by plating. (B) is a uniform layer substantially independent of (A) or (C), which reinforces and dimensionally stabilizes a substrate for connecting a semiconductor integrated circuit (generally referred to as a reinforcing plate or stiffener); Electromagnetic shielding of ICs, heat dissipation of ICs (generally referred to as heat sinks, heat spreaders, heat sinks), imparting flame retardancy to substrates for connecting semiconductor integrated circuits, and discrimination by shape of substrates for connecting semiconductor integrated circuits It has functions such as imparting properties. Therefore, the shape may be not only a layer shape but also a three-dimensional shape having a fin structure for heat dissipation.
In addition, any insulator or conductor may be used as long as it has the above function, and the material is not particularly limited. Examples of metals include copper, iron, aluminum, gold, silver, nickel, and titanium. Examples of the material include alumina, zirconia, soda glass, quartz glass, carbon, and the like, and examples of the organic material include polyimide, polyamide, polyester, vinyl, phenol, and epoxy polymer materials. Further, a composite material obtained by combining these can also be used. For example, those having a shape in which thin metal plating is formed on a polyimide film, those having conductivity by kneading carbon into a polymer, and those having a metal plate coated with an organic insulating polymer can be exemplified. Further, it is not limited that various surface treatments are performed in the same manner as in the above (A).

(C) is an adhesive layer mainly used for bonding (A) and (B). However, the use of (A) or (B) for bonding to another member (for example, an IC or a printed board) is not limited at all. This adhesive layer is usually laminated in a semi-cured state on the semiconductor integrated circuit connection substrate, and before or after lamination, 30 to 20 times.
The degree of curing can be adjusted by performing a pre-curing reaction at a temperature of 0 ° C. for an appropriate time. The thickness of the adhesive layer can be appropriately selected depending on properties such as adhesive strength, thermal and thermal stress relaxation effect, and workability, but is preferably 2 to 500 μm, more preferably 20 to 200 μm.

The adhesive composition constituting the adhesive layer must contain at least one or more of a thermoplastic resin, a thermosetting resin and crosslinked polymer particles, respectively, but the type is not particularly limited.

Thermoplastic resins have functions such as adhesiveness, flexibility, relaxation of thermal stress, and improvement of insulation properties due to low water absorption. Thermosetting resin resins have heat resistance, low curing shrinkage, low Water absorption,
Excellent properties such as heat resistance of adhesive layer, insulation at high temperature,
It is necessary to achieve a balance between physical properties such as chemical resistance and strength of the adhesive layer. The crosslinked polymer particles have an elastic modulus,
By changing physical properties such as hardness, there is an effect that control of the above physical properties is further facilitated. This is because the physical properties of the crosslinked polymer particles can be easily controlled as compared with the inorganic particles. Furthermore, since the size is fixed, unlike the case of modification by the conventional polymer addition system, the addition does not affect the phase separation structure of the system, and the type, amount and addition of other adhesive components Regardless of the method, a stable effect can be obtained. Further, since it is an organic substance, it has an excellent affinity for a thermoplastic resin and a thermosetting resin, and its specific gravity is close to these, so that its dispersibility is good.

As the thermoplastic resin, acrylonitrile-butadiene copolymer (NBR), acrylonitrile-
Butadiene rubber-styrene resin (ABS), styrene-
Known examples include butadiene-ethylene resin (SEBS), styrene-butadiene-styrene resin (SBS), acryl, polyvinyl butyral, polyamide, polyester, polyimide, polyamideimide, polyurethane, and polydimethylsiloxane. Further, these resins may have a functional group capable of reacting with a cyanate ester resin or another thermosetting resin. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. These functional groups are preferable because the bond with the thermosetting resin is strengthened and the heat resistance is improved.

As the thermoplastic resin, a copolymer containing butadiene as an essential copolymer component is particularly preferred from the viewpoints of adhesion to the material (B), flexibility, and an effect of reducing thermal stress, and various types can be used. . In particular, acrylonitrile-butadiene copolymer (NB) is preferred from the viewpoints of adhesion to metals, chemical resistance, and the like.
R), styrene-butadiene-ethylene resin (SEB
S), styrene-butadiene-ethylene resin (SEB)
S) is preferred. Further, a copolymer containing butadiene as an essential copolymer component and having a carboxyl group is more preferable. For example, NBR (NBR-C), SEBS (SEB
SC), SBS (SBS-C) and the like. NB
As R-C, for example, acrylonitrile and butadiene are copolymerized at a molar ratio of about 10/90 to 50/50, and a terminal rubber is carboxylated, or acrylonitrile, butadiene and acrylic acid, maleic acid, etc. And a terpolymer rubber of a carboxyl group-containing polymerizable monomer. Specifically, PNR-1H (manufactured by Nippon Synthetic Rubber Co., Ltd.), "Nipol" 1072J, "Nipol" DN612, "Nipol" DN631 (all manufactured by Zeon Corporation), "Hiker" CTBN (BF Goodrich) Company). Also, MX-073 (manufactured by Asahi Kasei Corporation) as SEBS-C and DBS as SBS-C
1300X (manufactured by Shell Japan Co., Ltd.).

Further, it is preferable that the thermoplastic resin and the thermosetting resin be soluble in a solvent, since the adhesive composition can be formed into an adhesive layer having a uniform composition and a uniform thickness by coating. In this case, the solubility is preferably 5 at 25 ° C.
% By weight or more, more preferably 10% by weight or more.
If it is less than 5% by weight, it is difficult to obtain an adhesive layer having a substantially appropriate thickness, which is not preferable. Although the solvent is not particularly limited, an organic solvent having a boiling point of 60 to 250 ° C is preferable in consideration of drying of the solvent in coating.

Examples of the thermosetting resin include known resins such as an epoxy resin, a phenol resin, a melamine resin, a xylene resin, a furan resin, and a cyanate ester resin. Particularly, epoxy resin and phenol resin are preferable because of their excellent insulating properties.

The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but is not limited to bisphenol F, bisphenol A, bisphenol S,
Diglycidyl ethers such as resorcinol, dihydroxynaphthalene, dicyclopentadiene diphenol, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, cyclohexane epoxide, etc. Alicyclic epoxy, and the like. Further, it is effective to use a halogenated epoxy resin, particularly a brominated epoxy resin, for imparting flame retardancy. At this time, although the use of only the brominated epoxy resin can impart flame retardancy, the heat resistance of the adhesive is greatly reduced, so that it is more effective to use a mixed system with a non-brominated epoxy resin. Examples of the brominated epoxy resin include a copolymerized epoxy resin of tetrabromobisphenol A and bisphenol A, or "BR
EN "-S (manufactured by Nippon Kayaku Co., Ltd.) and the like. These brominated epoxy resins are used in combination of two or more kinds in consideration of bromine content and epoxy equivalent. May be.

As the phenol resin, any known phenol resin such as a novolak phenol resin and a resol phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, and p-phenylphenol; cyclic alkyl-modified phenols such as terpene and dicyclopentadiene; and heterocycles such as nitro, halogen, cyano, and amino groups. Those having a functional group containing atoms, naphthalene, those having a skeleton such as anthracene,
Examples of resins include polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

The amount of the thermosetting resin to be added is as follows.
5 to 400 parts by weight, preferably 50 to 100 parts by weight
２００200 parts by weight. When the addition amount of the thermosetting resin is less than 5 parts by weight, the effect of addition is small, and when it exceeds 400 parts by weight, the properties of the cyanate ester resin are not exhibited, and neither is preferable.

The addition of a thermosetting resin curing agent and a curing accelerator to the adhesive composition constituting the adhesive layer is not limited at all. For example, 3,3'5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 3,3 '
5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-diethyl-
4,4'-diaminodiphenylmethane, 3,3'-dichloro-4,4'-diaminodiphenylmethane, 2,2 '
3,3'-tetrachloro-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide,
3,3'-diaminobenzophenone, 3,3'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone,
Aromatic polyamines such as 4,4'-diaminobenzophenone and 3,4,4'-triaminodiphenylsulfone; amine complexes of boron trifluoride such as boron trifluoride triethylamine complex; 2-alkyl-4-methylimidazole; Known compounds such as imidazole derivatives such as 2-phenyl-4-alkylimidazole, organic acids such as phthalic anhydride and trimellitic anhydride, dicyandiamide and triphenylphosphine can be used. These may be used alone or in combination of two or more. The addition amount is preferably 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive composition constituting the adhesive layer.

It is necessary that the crosslinked polymer particles used in the present invention do not dissolve in a solvent and maintain the particle shape while being contained in the final adhesive composition.

The method for crosslinking the crosslinked polymer particles is not particularly limited, and may be any of a covalent bond and an ionic bond. For example, a method in which a polymer having a double bond in a main chain or a side chain dispersed in fine particles by emulsion polymerization is further crosslinked with a peroxide is exemplified.

The average particle diameter of the crosslinked polymer particles is 0.0
It is preferably from 2 to 20 μm, more preferably from 0.2 to 5 μm.
μm. If less than 0.02μ, the effect of addition cannot be obtained,
Improvements in physical properties such as adhesion, flexibility, relaxation of thermal stress, low water absorption, heat resistance, etc. are not sufficient.

On the other hand, if the thickness exceeds 20 μm, separation from other adhesive components is remarkable, and the unevenness of the surface is large.
It is not preferable because processability and the like are reduced.

Examples of such crosslinked polymers include polybutadiene, polyisoprene, styrene, acrylonitrile-butadiene copolymer (NBR rubber), acrylonitrile-styrene-butadiene copolymer, ethylene-styrene-butadiene copolymer, polybutyl acrylate. And its copolymer (acrylic rubber), polyvinyl butyral, polyamide, polyimide, silicone, etc. as the main chain, double bond, amino group, epoxy group, carboxyl group, mercapto group, hydroxyl group, isocyanate group, methylol group, silanol group And the like into which a functional group for crosslinking is introduced. Further, crosslinked polymer particles having a composite structure of two or more of these polymers can also be preferably used. An example of such an example is a crosslinked polymer particle having a core-shell structure in which polymethyl methacrylate is present in an outer layer, centered on crosslinked polybutyl acrylate.

The crosslinked polymer particles have double bonds, amino groups,
Epoxy group, carboxyl group, mercapto group, hydroxyl group,
It may have a functional group that reacts with a thermoplastic resin and a thermosetting resin, such as an isocyanate group, a methylol group, and a silanol group. This case is preferable because the strength and heat resistance of the adhesive composition are improved. The method for introducing such a functional group is not particularly limited, and examples thereof include a method for introducing a functional group used for crosslinking of the polymer in excess, and a method for introducing the functional group by a graft reaction after forming the crosslinked polymer.

The content of the crosslinked polymer particles is from 1 to 80 parts by weight, preferably from 5 to 5 parts by weight, per 100 parts by weight of the adhesive composition.
0 parts by weight. When the amount of the crosslinked polymer particles is less than 1 part by weight, the effect of addition cannot be obtained, and the improvement of physical properties such as adhesiveness, flexibility, relaxation of thermal stress, low water absorption, heat resistance and the like is not sufficient. Also,
If the amount exceeds 80 parts by weight, the amount of addition is too large and the surface irregularities are large, so that the adhesive strength, workability and the like are undesirably reduced.

In addition to the above components, addition of organic and inorganic components such as an antioxidant and an ion scavenger as long as the properties of the adhesive are not impaired is not limited at all. Examples of fine inorganic components include aluminum hydroxide, magnesium hydroxide, metal hydroxides such as calcium aluminate hydrate, silica, alumina, zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, and magnesium oxide. Titanium oxide, iron oxide, cobalt oxide, chromium oxide, metal oxides such as talc, inorganic salts such as calcium carbonate, aluminum, gold, silver, nickel, iron, metal fine particles such as, or carbon black, glass, Examples of the organic component include crosslinked polymers such as styrene, NBR rubber, acrylic rubber, polyamide, polyimide, and silicone. These may be used alone or in combination of two or more. The average particle diameter of the fine particle component is preferably from 0.02 to 20 µ, and more preferably from 0.2 to 5 µ, in consideration of dispersion stability. The compounding amount is appropriately 1 to 80 parts by weight, preferably 5 to 50 parts by weight, based on 100 parts by weight of the adhesive composition.

The components (hereinafter, referred to as components) of the substrate for connecting a semiconductor integrated circuit of the present invention are materials used for producing a substrate for connecting a semiconductor integrated circuit and a semiconductor device at an intermediate processing stage. The component has (A) at least one or more adhesive layers having an insulating layer and a conductor pattern, and (C ') an adhesive layer having a protective film layer, or (B) a conductor pattern. And at least one adhesive layer having a (C ′) protective film layer, respectively.
(C ′) It is essential that the adhesive composition constituting the adhesive layer contains at least one or more of a thermoplastic resin, a thermosetting resin, and crosslinked polymer particles, respectively, but other configurations and structures are not particularly limited. . For example, (A) a flexible printed board or a TAB tape is used as a wiring board layer including an insulator layer and a conductor pattern,
A wiring board with an adhesive in which an uncured or semi-cured adhesive layer having a (C ') silicone release-treated polyester protective film on one or both sides thereof is laminated;
An adhesive in which a metal plate of copper, stainless steel, 42 alloy, or the like is used as a layer on which no conductor pattern is formed, and an uncured or semi-cured adhesive layer having a protective film similar to the above on one or both surfaces thereof is laminated. The attached metal plate (stiffener with adhesive) corresponds to the component of the present invention. Further, even when (A) a wiring board layer comprising an insulator layer and a conductor pattern and (B) one or more layers each having no conductor pattern formed thereon, each of the uncured or semi-cured layers having a protective film layer as the outermost layer. The so-called substrate for connecting a semiconductor integrated circuit with an adhesive in which a cured state adhesive layer is laminated is also included in the component of the present invention.

The protective film layer here is not particularly limited as long as it can be peeled off before the adhesive layer is adhered without impairing its function and form. Examples thereof include polyester, polyolefin, polyphenylene sulfide, polyvinyl chloride, and polytetrafluoroethylene. Plastic film of ethylene, polyvinylidene fluoride, polyvinyl fluoride, polyvinyl butyral, polyvinyl acetate, polyvinyl alcohol, polycarbonate, polyamide, polyimide, polymethyl methacrylate, etc., and coating treatment of these with release agent such as silicone or fluorine compound. Applied films, paper laminated with these films, paper impregnated or coated with a resin having releasability, and the like.

The peel strength of the protective film layer is preferably 1
２００200 N m ⁻¹ , more preferably 3 to 100 N m
It is ^-1 . When it is lower than 1 N m ^-1 , the protective film layer is apt to fall off, and when it exceeds 200 N m ^-1 , the protective film layer is hardly peeled off, and in both cases, the workability is undesirably reduced.

The semiconductor device according to the present invention is a device using the substrate for connecting a semiconductor integrated circuit according to the present invention.
The shape and structure are not particularly limited as long as they are A type, LGA type, and PGA type packages. The connection method between the semiconductor integrated circuit connection substrate and the IC includes gang bonding and single point bonding of TAB method, wire bonding used for a lead frame, resin sealing by flip chip mounting, anisotropic conductive film (adhesive). Any of connection and the like may be used. Further, a package called a CSP is also included in the semiconductor device of the present invention.

Next, an example of a method for manufacturing a semiconductor device according to the present invention will be described.

(1) Preparation of Wiring Board Layer (A) Consisting of Insulator Layer and Conductor Pattern:
T with a three-layer structure in which an adhesive layer and a protective film layer are laminated
The AB tape is processed by the following steps (a) to (d). (A) perforation of sprocket and device holes,
(B) thermal lamination with copper foil, (c) pattern formation (resist coating, etching, resist removal), (d) tin or gold-plating treatment. FIG. 3 shows an example of the shape of the obtained TAB tape (pattern tape).

(2) Preparation of layer (B) on which no conductor pattern is formed: A copper plate or a stainless (SUS304) plate having a thickness of 0.05 to 0.5 mm is degreased with acetone.

(3) Preparation of adhesive layer (C): Prepared by the following steps (a) and (b). (A) A coating obtained by dissolving the adhesive composition in a solvent is applied on a polyester film having releasability and dried. The thickness of the adhesive layer is 10
It is preferable to apply so that the thickness is 100 μm. Drying conditions are 100 to 200 ° C. for 1 to 5 minutes. The solvent is not particularly limited, but aromatic solvents such as toluene, xylene and chlorobenzene, ketones such as methyl ethyl ketone and methyl isobutyl ketone, and aprotic polar solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone alone or a mixture thereof are preferred. It is. (B)
An adhesive sheet is obtained by laminating a polyester or polyolefin-based protective film having a releasability with a lower peel strength than the above film on the film of (a). When the thickness of the adhesive is further increased, the adhesive sheet may be laminated plural times. After lamination, for example, 40-70 ° C
For about 20 to 200 hours to adjust the degree of curing.

(4) Preparation of a component (wiring board with adhesive) of a substrate for connecting a semiconductor integrated circuit: A protective film on one side of the adhesive sheet prepared in (3) is applied to the wiring board layer of (1). Laminate after peeling. The laminate surface may be either a surface with or without a conductor pattern. Laminating temperature 20 ~ 200 ℃, pressure 0.1 ~ 3M
Pa is preferred. Finally, depending on the shape of the semiconductor device,
Punching and cutting are performed as appropriate. FIG. 4 shows an example of the component of the present invention.

(5) Preparation of a component (stiffener with an adhesive) of a substrate for connecting a semiconductor integrated circuit: After peeling off the protective film on one side of the adhesive sheet prepared in (3) above on the metal plate (2). Laminate. A lamination temperature of 20 to 200 ° C. and a pressure of 0.1 to 3 MPa are preferred.
Alternatively, the coating of (3) may be directly applied to (B) and dried, and a protective film may be laminated. Finally, punching and cutting are performed as appropriate depending on the shape of the semiconductor device. FIG. 5 shows an example of the component of the present invention.

(6) Preparation of a substrate for connecting a semiconductor integrated circuit: (a) Method using a wiring board with an adhesive A protective film of an adhesive layer is peeled off from the component (wiring board with an adhesive) in (4), and a suitable Glue it to a punched metal plate. As the metal plate, for example, a metal plate having a rectangular shape and punched into a shape having a rectangular hole at the center in accordance with the device hole of the wiring board can be exemplified. The bonding conditions are a temperature of 20 to 200 ° C and a pressure of 0.1 to 3M.
Pa is preferred. Finally, post-curing is performed in a hot-air oven at 80 to 200 ° C. for about 15 to 180 minutes for heat curing of the adhesive.

(B) Method using a stiffener with an adhesive The component (5) (stiffener with an adhesive) is punched out with a metal mold, and for example, a stiffener with an adhesive having a square shape and a square hole at the center. And The protective film was peeled off from the stiffener with the adhesive, and the center hole of the stiffener with the adhesive was aligned with the device hole of the wiring board on the conductor pattern surface of the wiring substrate layer or the polyimide film surface on the back surface of (1). And stick them together. The bonding conditions are a temperature of 20 to 200 ° C. and a pressure of 0.
1-3 MPa is suitable. Finally, hot air oven
Within 15 to 80 to 200 ° C for heat curing of the adhesive within
Perform post cure for about 180 minutes.

FIG. 2 shows an example of the substrate for connecting a semiconductor integrated circuit described above.

(7) Fabrication of semiconductor device: The inner lead portion of the substrate for connecting a semiconductor integrated circuit of (6) is thermocompression-bonded (inner lead bonding) to a gold bump of the IC, and
With. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin. The obtained semiconductor device is connected to a printed circuit board or the like on which other components are mounted via solder balls, and mounted on an electronic device. Further, a so-called TCP type semiconductor device in which an IC is connected to the wiring board in the above (1) in advance and sealed with a resin can be used. FIG. 1 is a cross-sectional view of one embodiment of a semiconductor device of the present invention.

[0049]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

Evaluation method (1) Preparation of evaluation pattern tape: An 18 μm electrolytic copper foil was laminated on a TAB adhesive tape (# 7100, manufactured by Toray Industries, Inc.) at 140 ° C. and 0.1 MPa. Then, in an air oven at 80 ° C for 3 hours, 100
The tape was heated and cured sequentially at 150 ° C. for 5 hours at 150 ° C. to prepare a TAB tape with a copper foil. A photoresist film was formed on the copper foil surface of the obtained TAB tape with copper foil, etching, and resist peeling were performed by a conventional method to prepare a pattern tape sample for evaluation.

(2) Embedding property of conductor pattern and cure foaming: A pure copper plate having a thickness of 0.1 mm and having an adhesive layer of an adhesive composition and having a thickness of 100 μm was used as a conductor of the pattern tape for evaluation of (1). 130 ° C, 0.1
After laminating under the condition of MPa, 1
Heat curing treatment was performed at 50 ° C. for 2 hours. This was immersed in an etching solution containing ferric chloride as a main component to dissolve the pure copper plate. Finally, the exposed adhesive layer was observed under a microscope to evaluate the foaming during curing and the embedding property of the conductor pattern.

(3) Peel strength: A pure copper plate with an adhesive layer similar to that of (2) was applied to a polyimide film ("UPILEX" 75S, manufactured by Ube Industries, Ltd.) at 130.degree.
After laminating under the conditions of a, 150
Heat curing treatment was performed at 2 ° C. for 2 hours. The obtained polyimide film of the sample was cut so as to have a width of 2 mm, and peeled in a 90 ° direction at a speed of 50 mm / min, and the peeling force at that time was measured.

(4) Insulation reliability: Conductor width 100 μm, distance between conductors 100 μm of pattern tape for evaluation in (1)
On the conductor pattern surface of the sample for evaluating the comb shape,
A pure copper plate with an adhesive layer similar to that of (2) was heated at 130 ° C.
After laminating under the condition of 0.1 MPa, a heat curing treatment was performed in an air oven at 150 ° C. for 2 hours. Using the obtained sample, in a state where a voltage of 100 V was continuously applied in a constant temperature and humidity chamber of 85 ° C. and 85% RH, the resistance value was measured immediately after the measurement and after 200 hours.

(5) Solder heat resistance: A 30 mm square sample prepared by the above method (3) was conditioned for 48 hours in an atmosphere of 85 ° C. and 85% RH, and was immediately placed on a solder bath for 60 seconds. The highest temperature without floating, swelling and peeling was measured.

(6) Reflow test of semiconductor device: thickness 1
The FR-4 glass epoxy copper-clad substrate having a thickness of 1 mm was etched according to a conventional method to form a solder ball connection pattern having a pitch of 1 mm. This was coated with cream solder, and a BGA type semiconductor device sample prepared in the following example was prepared.
After conditioning for 48 hours in an atmosphere of 5 ° C. and 85% RH, the film was immediately passed through a reflow furnace under a reflow condition of a maximum temperature of 230 ° C. for 10 seconds, and then the occurrence of swelling and peeling was evaluated.

(7) Heat cycle test: A 30 mm square sample prepared by the above method (3) was subjected to a heat cycle tester (Model PL-3, manufactured by Tabai Espec Corp.) at -20.
600 cycles of treatment were carried out at a temperature of 1 to 100 ° C and a minimum and maximum temperature of 1 hour each, and the occurrence of peeling was evaluated.

(8) Thermal cycle test of semiconductor device: A 1 mm thick FR-4 glass epoxy copper-clad substrate was etched according to a conventional method to form a solder ball connection pattern having a pitch of 1 mm. Apply cream solder to this,
A sample for a thermal cycle test was prepared by mounting a BGA type semiconductor device sample prepared in an example described later under a reflow condition of 230 ° C. This is converted to 60 under the same conditions as in (7).
After 0 cycles, the occurrence of cracks in the solder balls was evaluated.

Example 1 Methylsiloxane cross-linked polymer particles (manufactured by Toshiba Silicone Co., Ltd., “Tospearl” 105, average particle diameter: 0.1)
5 μm) was mixed with a mixed solvent of toluene / methyl ethyl ketone = 1/1 and then subjected to a sand mill treatment to prepare a particle dispersion. NBR-C (PNR-1H, manufactured by Nippon Synthetic Rubber Co., Ltd.), brominated epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epicoat" 5050, bromine content 49%, epoxy equivalent) 395), a non-brominated epoxy resin ("Epiccoat" 834, manufactured by Yuka Shell Co., Ltd., epoxy equivalent: 250), 4,4'-diaminodiphenyl sulfone, and a methyl ethyl ketone having the same weight as the dispersion, respectively, as shown in Table 1. The mixture was added so as to have a ratio, and stirred and mixed at 30 ° C. to prepare an adhesive solution. This adhesive solution was applied to a 25 μm thick polyethylene terephthalate film with a silicone release agent with a bar coater to a dry thickness of about 20 μm, and dried at 170 ° C. for 5 minutes. On the other hand, except that a 25 μm thick polyethylene terephthalate film with a silicone release agent having a low release force was used, an adhesive layer was formed in the same manner as described above to a dry thickness of about 50 μm. Next, these were laminated together with the adhesive surfaces together to prepare an adhesive sheet for a semiconductor device of the present invention having an adhesive thickness of 40 μm. FIG. 6 shows the configuration. This adhesive sheet was laminated on a pure copper plate having a thickness of 0.1 mm under the conditions of 100 ° C. and 0.1 MPa to obtain a pure copper plate with an adhesive layer. Table 2 shows the characteristics.

The pure copper plate with the adhesive layer obtained by the above procedure was punched into a shape having a 30 mm square outer shape and a 20 mm square hole in the center, and was used as a component for a semiconductor integrated circuit connection substrate (stiffener with an adhesive). It was created.

On the other hand, a pattern tape (wiring board layer) shown in FIG. 3 was prepared in the same manner as the above-mentioned evaluation method (1). However, a photosensitive solder resist (“Probimer” 71, manufactured by Ciba Geigy) is applied to the conductive pattern surface, dried, exposed with a photomask, developed, and heat-cured to form a pad for solder ball connection (solder ball pitch 1.0 m).
m) The resist was removed above. Then, the stiffener with the adhesive was aligned at 130 ° C. and 0.1 MPa so that the holes corresponded to the device holes of the pattern tape.
After thermocompression bonding to the surface opposite to the conductor pattern under the conditions of the above, heat curing treatment is performed in an air oven at 150 ° C for 2 hours,
A substrate for connecting a semiconductor integrated circuit was prepared.

Further, the inner lead portion of the substrate for connecting a semiconductor integrated circuit was subjected to inner lead bonding at 450 ° C. for 1 minute to connect the semiconductor integrated circuit. Next, resin sealing was performed with an epoxy-based liquid sealing agent (“Chipcoat” 1320-617, manufactured by Hokuriku Paint Co., Ltd.). After solder cream printing on the pad for solder ball connection, solder ball of 0.3mm diameter (Tanaka Electronics Industries
(Manufactured by Co., Ltd.) and heated in a reflow furnace at 260 ° C. to obtain a semiconductor device. FIG. 1 shows a cross section of the obtained semiconductor device. Table 2 shows the characteristics.

Example 2 Acrylonitrile-butadiene copolymer (NBR rubber)
And crosslinked polymer particles having a carboxyl group (XER-91, manufactured by Nippon Synthetic Rubber Co., Ltd., average particle diameter: 0.07 μm) and aluminum hydroxide (H-42I, manufactured by Showa Denko KK) After mixing with a mixed solvent of toluene / methyl ethyl ketone = 1/1, the mixture was subjected to a sand mill treatment to prepare a particle dispersion. The NBR-C
(PNR-1H, manufactured by Nippon Synthetic Rubber Co., Ltd.), brominated epoxy resin ("Epicoat" 505, manufactured by Yuka Shell Co., Ltd.)
0, bromine content 49%, epoxy equivalent 395), non-brominated epoxy resin ("Epicoat" manufactured by Yuka Shell Co., Ltd.)
834, epoxy equivalent 250), 4,4 ′ diaminodiphenyl sulfone and the same amount of methyl ethyl ketone as the dispersion were added so as to have the composition ratios shown in Table 1, respectively.
Then, the mixture was stirred and mixed to prepare an adhesive solution. Using this adhesive solution, components of a substrate for connecting a semiconductor integrated circuit (a stiffener with an adhesive) and a substrate for connecting a semiconductor integrated circuit were obtained in the same manner as in Example 1. Table 2 shows the characteristics.

Example 3 Amino group-containing dimethylsiloxane-crosslinked polymer particles (manufactured by Toray Dow Corning Silicone Co., Ltd., “Trefil” E-601, average particle diameter: 5 μm) and spherical silica (manufactured by Tokuyama Corporation) Excelica ") was mixed with toluene and then sand-milled to form a silica dispersion. NBR-C (Nippon Synthetic Rubber Co., Ltd.)
Manufactured by PNR-1H), SEBS-C (manufactured by Asahi Kasei Corporation)
MX-073), epoxy resin ("Epicoat" 828, manufactured by Yuka Shell Epoxy Co., Ltd., epoxy equivalent: 18)
6), 4,4′-diaminodiphenyl sulfone, and a dispersion and methyl ethyl ketone of the same weight were added so as to have the composition ratios shown in Table 1, and stirred and mixed at 30 ° C. to prepare an adhesive solution.

Next, an adhesive sheet was prepared from this adhesive solution in the same manner as in Example 1. The adhesive sheet was applied to a pattern tape (wiring board layer) prepared in the same manner as in Example 1 at 80 ° C. in the same procedure as in Example 1.
Thermocompression bonding was performed on the surface opposite to the conductor pattern under the condition of 0.1 MPa. Further, the adhesive layer sheet with the protective film is punched out in accordance with the device hole or the like of the wiring board layer, and the components of the semiconductor integrated circuit connecting board (wiring board with adhesive)
I got

On the other hand, a pure copper plate having a thickness of 0.1 mm
A 20 mm square hole was punched out in the center of a square mm to form a stiffener. This was aligned with the adhesive-attached wiring board so that the holes of the stiffener corresponded to the device holes of the pattern tape.
Thermocompression bonding was performed on the surface opposite to the conductor pattern under the condition of 0.1 MPa. Finally, a heat curing treatment was performed at 150 ° C. for 2 hours in an air oven to prepare a semiconductor integrated circuit connection substrate. Table 2 shows the characteristics.

Example 4 Core-shell crosslinked polymer particles (manufactured by Zeon Corporation, F351, average particle diameter: 0.3 μm) having polybutyl acrylate crosslinked polymer as a core and polymethyl methacrylate as a shell, and aluminum hydroxide (Showa Denko KK, H-42I) was mixed with a mixed solvent of toluene / methyl ethyl ketone = 1/1, and then subjected to sand mill treatment to prepare an aluminum hydroxide dispersion. NBR-C (PNR-1 manufactured by Nippon Synthetic Rubber Co., Ltd.)
H), epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epicoat" 828, epoxy equivalent: 186), phenol novolak resin (manufactured by Gunei Chemical Industry Co., Ltd., PSM4261),
4,4'-Diaminodiphenylsulfone, triphenylphosphine, and a dispersion were added to each of the same weight of methyl ethyl ketone so as to have the composition ratio shown in Table 1, followed by stirring and mixing at 30 ° C to prepare an adhesive solution. Using this adhesive solution, components of a substrate for connecting a semiconductor integrated circuit (a stiffener with an adhesive) and a substrate for connecting a semiconductor integrated circuit were obtained in the same manner as in Example 1. Table 2 shows the characteristics.

Comparative Example 1 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H) and a dispersion were added to each of the same proportions of methyl ethyl ketone so as to have the composition ratio shown in Table 1, followed by stirring and mixing at 30 ° C. to prepare an adhesive solution. Using this adhesive solution, components of a substrate for connecting a semiconductor integrated circuit (a stiffener with an adhesive) and a substrate for connecting a semiconductor integrated circuit were obtained in the same manner as in Example 1.
Table 2 shows the characteristics.

Comparative Example 2 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. A phenol novolak resin (manufactured by Gunei Chemical Industry Co., Ltd., PSM42) was added to this dispersion.
61), hexamethylenetetramine and methyl ethyl ketone of the same weight as the dispersion were added so as to have the composition ratios shown in Table 1, respectively, and stirred and mixed at 30 ° C. to prepare an adhesive solution. Using this adhesive solution, components of a substrate for connecting a semiconductor integrated circuit (a stiffener with an adhesive) and a substrate for connecting a semiconductor integrated circuit were obtained in the same manner as in Example 1. Table 2 shows the characteristics.

[0069]

[Table 1]

[0070]

[Table 2]

From the examples and comparative examples in Tables 1 and 2, it can be seen that the semiconductor integrated circuit connection substrate obtained by the present invention is excellent in adhesive strength, insulation reliability and durability.

[0072]

The present invention is to provide a novel substrate for connecting a semiconductor integrated circuit which is excellent in processability, adhesive strength, insulation reliability and durability, components constituting the same, and a semiconductor device, which are industrially provided. The substrate for connecting a semiconductor integrated circuit according to the present invention can improve the economic efficiency based on the reliability and the ease of processing of a semiconductor device for high-density mounting.

[Brief description of the drawings]

FIG. 1 shows B using a semiconductor integrated circuit connection substrate of the present invention.
FIG. 4 is a cross-sectional view of one embodiment of a GA semiconductor device.

FIG. 2 is a cross-sectional view of one embodiment of a substrate for connecting a semiconductor integrated circuit of the present invention.

FIG. 3 is a perspective view of one embodiment of a pattern tape (TAB tape) constituting a substrate for connecting a semiconductor integrated circuit according to the present invention.

FIG. 4 is a cross-sectional view of one embodiment of a component (wiring substrate with an adhesive) of the substrate for connecting a semiconductor integrated circuit according to the present invention.

FIG. 5 is a cross-sectional view of one embodiment of a component (a stiffener with an adhesive) of a substrate for connecting a semiconductor integrated circuit according to the present invention.

FIG. 6 is a cross-sectional view of one embodiment of the adhesive sheet for a semiconductor device of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor integrated circuit 2 Gold bump 3,11,17 Flexible insulating film 4,12,18 Adhesive layer which comprises a wiring board layer 5,13,21 Conductor for connecting a semiconductor integrated circuit 6,14, 23 Adhesive layer composed of the adhesive composition of the present invention 7, 15 Layer on which no conductor pattern is formed 8, 16 Solder resist 9 Solder ball 10 Sealing resin 19 Sprocket hole 20 Device hole 22 Solder ball connection Conductor

Continuation of front page (51) Int.Cl. ⁶ Identification code FI C09J 109/00 C09J 109/00 113/00 113/00 161/06 161/06 163/00 163/00 201/00 201/00 201/08 201/08

Claims (18)

[Claims] 1. A semiconductor integrated circuit connection comprising (A) a wiring board layer comprising an insulator layer and a conductor pattern, (B) at least one layer having no conductor pattern and (C) an adhesive layer. A semiconductor integrated circuit connection, comprising: a substrate, wherein (C) the adhesive composition constituting the adhesive layer contains at least one or more of a thermoplastic resin, a thermosetting resin, and crosslinked polymer particles as essential components. Substrate. 2. The substrate for connecting a semiconductor integrated circuit according to claim 1, wherein the crosslinked polymer particles constituting the adhesive composition have an average particle diameter of 0.02 to 20 μm. 3. The content of the crosslinked polymer particles constituting the adhesive composition is from 1 to 80 with respect to 100 parts by weight of the adhesive composition.
2. The substrate for connecting a semiconductor integrated circuit according to claim 1, wherein the substrate is a weight part. 4. The substrate for connecting a semiconductor integrated circuit according to claim 1, wherein the adhesive composition contains a copolymer containing butadiene as an essential copolymer component. 5. The substrate according to claim 1, wherein the adhesive composition contains butadiene as an essential copolymer component and contains a copolymer having a carboxyl group. 6. The thermosetting resin constituting the adhesive composition,
2. The substrate for connecting a semiconductor integrated circuit according to claim 1, wherein the substrate is an epoxy resin and / or a phenol resin. 7. The method according to claim 1, wherein (A) the insulating layer constituting the wiring board layer comprising the insulating layer and the conductor pattern comprises at least one or more polyimide films, and the conductor pattern contains copper. The substrate for connecting a semiconductor integrated circuit according to claim 1. 8. A semiconductor device using the substrate for connecting a semiconductor integrated circuit according to claim 1. 9. A component of a substrate for connecting a semiconductor integrated circuit having at least one each of (A) a wiring board layer composed of an insulator layer and a conductor pattern and (C ′) an adhesive layer having a protective film layer. And (C ′) a substrate for connecting a semiconductor integrated circuit, wherein the adhesive composition constituting the adhesive layer contains at least one or more of a thermoplastic resin, a thermosetting resin, and crosslinked polymer particles as essential components. parts. 10. A component of a substrate for connecting a semiconductor integrated circuit, comprising: (B) at least one layer having no conductive pattern and (C ′) at least one adhesive layer having a protective film layer. ') A component of a substrate for connecting a semiconductor integrated circuit, wherein the adhesive composition constituting the adhesive layer contains at least one or more of a thermoplastic resin, a thermosetting resin, and crosslinked polymer particles as essential components. 11. The component for a substrate for connecting a semiconductor integrated circuit according to claim 9, wherein an average particle diameter of the crosslinked polymer particles constituting the adhesive composition is 0.02 to 20 μm. 12. The content of the crosslinked polymer particles constituting the adhesive composition is 1 to 8 with respect to 100 parts by weight of the adhesive composition.
The component of the substrate for connecting a semiconductor integrated circuit according to claim 9 or 10, wherein the component is 0 parts by weight. 13. The component for a substrate for connecting a semiconductor integrated circuit according to claim 9, wherein the adhesive composition constituting the adhesive layer contains a copolymer containing butadiene as an essential copolymer component. . 14. The semiconductor integrated circuit according to claim 9, wherein the adhesive composition constituting the adhesive layer contains butadiene as an essential copolymer component and contains a copolymer having a carboxyl group. Parts of connection board. 15. The component for a substrate for connecting a semiconductor integrated circuit according to claim 9, wherein the adhesive composition constituting the adhesive layer contains an epoxy resin and / or a phenol resin. (A) The insulating layer constituting the wiring board layer comprising the insulating layer and the conductor pattern is made of at least one or more polyimide films, and the conductor pattern contains copper. The component of the substrate for connecting a semiconductor integrated circuit according to claim 9. 17. The component for a substrate for connecting a semiconductor integrated circuit according to claim 10, wherein the layer in which (B) the conductor pattern is not formed is a metal plate. 18. The method according to claim 18, wherein the protective film layer of the adhesive layer (C ′) comprises:
The component of the substrate for connecting a semiconductor integrated circuit according to claim 9, wherein the component is an organic film subjected to a release treatment.