JP2007246875A - Resin paste for die bonding, method for producing semiconductor device by using the resin paste, and semiconductor device obtained by the production method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin paste for die bonding, easily supplied or coated by a printing method on a substrate requiring that a semiconductor device is stuck at a comparatively low temperature, and hardly causing cracks and voids at postcuring even if a prebaking step before sticking the semiconductor device is omitted; to provide a method for producing the semiconductor device by using the resin paste for the die bonding; and to provide the semiconductor device. <P>SOLUTION: The resin paste for the die bonding contains (A) a polymer of butadiene having a carboxylic acid terminal group, (B) a thermosetting resin, (C) a filler, (D) a silicone rubber and (E) a solvent for printing, regulated so that the content of the silicone resin (D) may be ≥30 wt.% based on the whole resin component. The method for producing the semiconductor device by using the resin paste for the die bonding, and the semiconductor device are also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a resin paste for die bonding used as a bonding material (die bonding material) between a semiconductor element such as an IC or LSI and a support member such as a lead frame or an insulating support substrate, and a semiconductor device using the resin paste. The present invention relates to a manufacturing method and a semiconductor device obtained by the manufacturing method.

  Conventionally, Au—Si eutectic alloy, solder, silver paste, and the like are known as bonding materials between semiconductor elements such as IC and LSI and support members such as lead frames and insulating support substrates. Further, an adhesive film using a specific polyimide resin previously proposed by the present inventors, an adhesive film for die bonding in which a conductive filler or an inorganic filler is added to a specific polyimide resin, and the like are generally known. (See Patent Documents 1 to 3).

  However, although the Au—Si eutectic alloy has high heat resistance and high moisture resistance, it has a problem that it is easily broken and expensive when applied to a large chip because of its high elastic modulus. Moreover, although solder is cheap, it is inferior in heat resistance, and its elastic modulus is as high as that of an Au—Si eutectic alloy, so that it is difficult to apply it to a large chip. In addition, silver paste is inexpensive, has high moisture resistance, has the lowest elastic modulus, and has heat resistance that can be applied to a thermocompression bonding wire bonder at 350 ° C, so it is still widely used as a die bonding material. However, as the integration of ICs and LSIs increases and the size of the chips increases, it is difficult to spread and apply the silver paste over the entire surface of the chip. Absent.

  On the other hand, the above-mentioned adhesive film for die bonding can form a die bonding layer on a support substrate relatively easily, and can be suitably used especially for 42 alloy lead frames, and can be bonded at a relatively low temperature. In addition, it has good hot adhesive strength.

  However, in order to efficiently supply and affix this adhesive film to a support substrate, an affixing device for cutting out (or punching out) and affixing the adhesive film to a chip size in advance is required. Further, the method of punching the adhesive film and pasting a plurality of chips at once tends to waste the adhesive film. Furthermore, since most of the support substrate has an inner layer wiring formed inside the substrate, the surface to which the adhesive film is applied has many irregularities, and voids are generated when the adhesive film is applied, so that the reliability tends to decrease. In addition, before the semiconductor element is attached to the die bonding material, the moisture absorbed by the substrate and the die bonding material is removed to prevent cracks and voids from being generated in the die bonding layer during post-curing. Recently, there is a demand for a die bonding material that does not generate cracks or voids during post-curing even if this pre-baking step is omitted from the viewpoint of process control and shortening of assembly time.

In recent years, attention has been focused on a method for supplying a die bonding material by a printing method with high mass productivity for the purpose of reducing the manufacturing cost.
Japanese Patent Application Laid-Open No. 07-228697 Japanese Patent Laid-Open No. 06-145639 Japanese Patent Laid-Open No. 06-264035

  The present invention can easily supply and apply by a printing method to a substrate on which a semiconductor element needs to be attached at a relatively low temperature, and can eliminate cracks and voids during post-curing even if the pre-bake process before attaching the semiconductor element is omitted. An object of the present invention is to provide a die-bonding resin paste that does not generate cavities, a method of manufacturing a semiconductor device using the die-bonding resin paste, and a semiconductor device.

  That is, the present invention is characterized by the following items (1) to (5).

  (1) A butadiene polymer having a carboxylic acid end group (A), a thermosetting resin (B), a filler (C), a silicone rubber (D), and a printing solvent (E), wherein the silicone rubber (D ) Is contained in all resin components in an amount of 30% by weight or more.

  (2) The above (1) characterized in that the solid content is 40 to 90% by weight, the thixotropy index is 1.5 to 8.0, and the viscosity (25 ° C.) is 5 to 1000 Pa · s. The resin paste for die bonding as described.

  (3) A step of applying a predetermined amount of the resin paste for die bonding described in (1) or (2) on a support substrate, a step of drying the applied resin paste to form a B stage, and a B stage A method of manufacturing a semiconductor device, comprising: mounting a semiconductor element on the resin paste, and post-curing the resin paste.

  (4) A step of applying a predetermined amount of the die bonding resin paste according to (1) or (2) on a support substrate, a step of mounting a semiconductor element on the applied resin paste, and the resin paste A method for manufacturing a semiconductor device, comprising a step of curing.

  (5) A semiconductor device obtained by the method for manufacturing a semiconductor device according to (3) or (4).

  ADVANTAGE OF THE INVENTION According to this invention, the resin paste for die bonding which can be easily supplied and apply | coated with a printing method with respect to the board | substrate which needs to affix a semiconductor element at comparatively low temperature can be provided.

  In addition, the resin paste for die bonding of the present invention has heat resistance, is easy to handle, and is excellent in low stress property, adhesive force during heat and low temperature adhesive property. Furthermore, since the hygroscopicity of the die bonding material is low, there is no generation of cracks and voids during post-curing even if the pre-bake process before the semiconductor element is affixed, contributing to process management and shortening of assembly time during semiconductor device assembly. .

  Further, the resin paste for die bonding of the present invention can be suitably used for an insulating support substrate such as an organic substrate, and a support substrate such as a copper lead frame or a 42 alloy lead frame.

  Hereinafter, the present invention will be described in more detail.

  The resin paste for die bonding according to the present invention (hereinafter sometimes simply referred to as “resin paste”) includes a butadiene polymer (A) (homopolymer or copolymer) having a carboxylic acid end group, and a thermosetting resin (B). , Filler (C), silicone rubber (D), and printing solvent (E).

  The butadiene polymer having a carboxylic acid end group as component (A) is not particularly limited. For example, it can be suitably used as a low molecular weight liquid polybutadiene having acrylonitrile introduced into the main chain and having a carboxylic acid at the end. Hycer CTB-2009 × 162, CTBN-1300 × 31, CTBN-1300 × 8, CTBN-1300 × 13, CTBNX-1300 × 9 (all manufactured by Ube Industries, Ltd., trade name) and carboxylic acid NISSO-PB-C-2000 (manufactured by Nippon Soda Co., Ltd., trade name), which is a low molecular weight liquid polybutadiene having a group. These can be used alone or in combination of two or more.

  Although it does not specifically limit as a thermosetting resin which is a component (B), Preferably, it is an epoxy resin, and includes an epoxy resin, a phenol resin or the compound which has a phenolic hydroxyl group in a molecule | numerator, and a hardening accelerator. It may be used as a resin mixture. More preferably, the epoxy resin contains at least two epoxy groups in the molecule, and phenol glycidyl ether type epoxy resin is particularly preferable from the viewpoint of curability and cured product characteristics. Specific examples of such resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F or a condensed product of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolac resin, glycidyl ether of cresol novolac resin, bisphenol. Examples thereof include glycidyl ether of A novolac resin. These can be used alone or in combination of two or more.

  When the epoxy resin is used, the blending amount is not more than 300 parts by weight, preferably not more than 200 parts by weight with respect to 100 parts by weight of the component (A). If this amount exceeds 300 parts by weight, the storage stability of the paste tends to be lowered.

  The phenol resin has at least two phenolic hydroxyl groups in the molecule, and examples thereof include phenol novolac resin, cresol novolac resin, bisphenol A novolac resin, poly-p-vinylphenol, phenol aralkyl resin and the like. Can be mentioned. These can be used alone or in combination of two or more.

  Moreover, it is preferable that the compounding quantity of the compound which has a phenolic hydroxyl group in a phenol resin or a molecule | numerator is 0-150 weight part with respect to 100 weight part of epoxy resins, More preferably, it is 0-120 weight part. When this compounding quantity exceeds 150 weight part, there exists a possibility that sclerosis | hardenability may become inadequate.

  The curing accelerator is not particularly limited as long as it is used for curing an epoxy resin. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo (5,4,0) undecene-7-tetraphenylborate and the like. Two or more of these may be used in combination. Moreover, it is preferable that the quantity of a hardening accelerator is 0-50 weight part with respect to 100 weight part of epoxy resins, More preferably, it is 0-20 weight part. When this compounding quantity exceeds 50 weight part, there exists a possibility that the storage stability of a paste may fall.

  Moreover, the imide compound which has at least 2 thermosetting imide group in 1 molecule can also be used as a thermosetting resin (B). Examples of such compounds include orthobismaleimide benzene, metabismaleimide benzene, parabismaleimide benzene, 1,4-bis (p-maleimidocumyl) benzene, 1,4-bis (m-maleimidocumyl). Benzene is mentioned. These can be used alone or in combination of two or more.

〔式中、ＸやＹは、Ｏ、ＣＨ_２、ＣＦ_２、ＳＯ_２、Ｓ、ＣＯ、Ｃ（ＣＨ_３）_２又はＣ（Ｃ
Ｆ_３）_２を示し、Ｒ_１、Ｒ_２、Ｒ_３、Ｒ_４、Ｒ_５、Ｒ_６、Ｒ_７及びＲ_８は、それぞれ独立に水素、低級アルキル基、低級アルコキシ基、フッ素、塩素又は臭素を示し、Ｄはエチレン性不飽和二重結合を有するジカルボン酸残基を示し、ｍは０〜４の整数を示す。〕 Furthermore, it is also preferable to use imide compounds represented by the following general formulas (I) to (III).

[Wherein X and Y are O, CH ₂ , CF ₂ , SO ₂ , S, CO, C (CH ₃ ) ₂ or C (C
F ₃ ) ₂ , R ₁ , R ₂ , R ₃ , R ₄ , R ₅ , R ₆ , R ₇ and R ₈ are each independently hydrogen, lower alkyl group, lower alkoxy group, fluorine, chlorine or bromine D represents a dicarboxylic acid residue having an ethylenically unsaturated double bond, and m represents an integer of 0 to 4. ]

Examples of the imide compound of the general formula (I) include 4,4-bismaleimide diphenyl ether, 4,4-bismaleimide diphenylmethane, 4,4-bismaleimide-3,
3′-dimethyl-diphenylmethane, 4,4-bismaleimide diphenylsulfone, 4,
4-bismaleimide diphenyl sulfide, 4,4-bismaleimide diphenyl ketone,
2,2′-bis (4-maleimidophenyl) propane, 4,4-bismaleimidediphenylfluoromethane, 1,1,1,3,3,3-hexafluoro-2,2-bis (4-maleimidophenyl) Examples include propane.

Examples of the imide compound of the general formula (II) include bis [4- (4-maleimidophenoxy) phenyl] ether, bis [4- (4-maleimidophenoxy) phenyl] methane, and bis [4- (4 -Maleimidophenoxy) phenyl] fluoromethane, bis [4- (4-maleimidophenoxy) phenyl] sulfone, bis [4- (3-maleimidophenoxy) phenyl] sulfone, bis [4- (4-maleimidophenoxy) phenyl]
Sulfide, bis [4- (4-maleimidophenoxy) phenyl] ketone, 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane, 1,1,1,3,3,3-hexafluoro-2 , 2-bis [4- (4-maleimidophenoxy) phenyl] propane, and the like.

  The compounding amount in the case of using the imide compound is not more than 200 parts by weight, preferably not more than 100 parts by weight with respect to 100 parts by weight of the component (A). When this amount exceeds 200 parts by weight, the storage stability of the paste tends to be lowered.

  Moreover, in order to accelerate | stimulate hardening of the said imide compound, you may use a radical polymerization agent. Examples of the radical polymerization agent include acetylcyclohexylsulfonyl peroxide, isobutyryl peroxide, benzoyl peroxide, octanoyl peroxide, acetyl peroxide, dicumyl peroxide, cumene hydroperoxide, azobisisobutyronitrile and the like. Can be mentioned. As for the usage-amount of a radical polymerization agent, about 0.01-1.0 weight part is preferable with respect to 100 weight part of said imide compounds.

  Examples of the filler of component (C) include conductive (metal) fillers such as silver powder, gold powder, and copper powder, and inorganic substance fillers such as silica, alumina, titania, glass, iron oxide, and ceramic. Among these fillers, conductive (metal) fillers such as silver powder, gold powder, and copper powder are added for the purpose of imparting conductivity, heat conductivity, or thixotropic property to the adhesive, and silica, alumina, titania, glass, and iron oxide. Inorganic fillers such as ceramics are added for the purpose of imparting low thermal expansion, low moisture absorption, and thixotropic properties to the adhesive. These can be used alone or in combination of two or more.

Further, as the inorganic filler, an inorganic ion exchanger may be used for the purpose of improving the electrical reliability of the semiconductor device. Examples of the inorganic ion exchanger include ions extracted into an aqueous solution when the cured resin paste is extracted in hot water, for example, ions such as Na ⁺ , K ⁺ , Cl ⁻ , F ⁻ , RCOO ⁻ and Br ^−. Those having a capturing action are effective. Examples of such ion exchangers include naturally produced zeolites, natural minerals such as zeolites, acid clay, dolomite, hydrotalcites, and artificially synthesized synthetic zeolites.

  These conductive fillers or inorganic fillers can be used in combination of two or more. As long as the physical properties are not impaired, one or more conductive fillers and one or more inorganic fillers may be mixed and used.

  In general, the amount of the filler is preferably 1 to 100 parts by weight, more preferably 2 to 50 parts by weight with respect to 100 parts by weight of the component (A). The amount of the filler is preferably 1 part by weight or more from the viewpoint of imparting sufficient thixotropic properties (thixotropic index: 1.5 or more) to the paste. Further, the amount of the filler is preferably 100 parts by weight or less from the viewpoint of adhesiveness. If the amount is too large, the elastic modulus of the cured product is increased, and as a result, the stress of the die bonding material is increased. There is a risk that the relaxation ability is lowered and the mounting reliability of the semiconductor device is lowered.

  Moreover, mixing and kneading of the filler can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a ball mill.

  Moreover, the silicone rubber which is the said component (D) is used in order to reduce the hygroscopic property of a resin paste, and to maintain low stress property. The silicone rubber (D) is not particularly limited as long as it is a rubber-like filler having heat resistance, low moisture absorption, low stress, and low elasticity. For example, one obtained by three-dimensionally cross-linking dimethyl silicone is used. Can be mentioned. More specifically, Trefill E-500, Trefil E-600, Trefil E-601 (all are trade names, silicone elastomers manufactured by Toray Dow Corning Co., Ltd.) and the like are mixed. May be used.

  The blending amount of the silicone rubber (D) is 30% by weight or more in the total resin components (the components (A), (B), (D) and other resin components added as necessary)). The upper limit is preferably 70% by weight or less. When the blending amount of the silicone rubber (D) is less than 30% by weight, it is difficult to obtain the above effect obtained by blending the silicone rubber. On the other hand, when it exceeds 70% by weight, the adhesive strength after curing tends to decrease. It is in.

  The printing solvent as the component (E) is preferably selected from solvents that can uniformly knead or disperse the filler. In view of preventing solvent volatilization during printing, it is preferable to select a solvent having a boiling point of 100 ° C. or higher.

  Examples of the printing solvent include N-methyl-2-pyrrolidinone, diethylene glycol dimethyl ether (also referred to as diglyme), triethylene glycol dimethyl ether (also referred to as triglyme), diethylene glycol diethyl ether, 2- (2-methoxyethoxy) ethanol, γ -Butyrolactone, isophorone, carbitol, carbitol acetate, 1,3-dimethyl-2-imidazolidinone, 2- (2-butoxyethoxy) ethyl acetate, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, anisole, Examples include solvents mainly composed of petroleum distillates that are used as solvents for printing inks. You may use these in mixture of 2 or more types.

  The amount of the printing solvent (E) is preferably 10 to 100 parts by weight with respect to 100 parts by weight of the component (A).

  In addition, when bubbles and voids are noticeable during the printing of the resin paste of the present invention, it is effective to add a defoaming agent, a defoaming agent, a defoaming agent, etc. in the printing solvent (E). It is. The addition amount is preferably 0.01% by weight or more in the solvent (E) from the viewpoint of exerting a foam suppression effect, and in the solvent (E) from the viewpoint of viscosity stability and adhesiveness of the resin paste. It is preferable to add so that it may contain 10 weight% or less.

  In addition, in order to improve the adhesive strength, a silane coupling agent, a titanium coupling agent, a nonionic surfactant, a fluorine surfactant, a silicone additive, or the like may be appropriately added to the resin paste of the present invention. Good.

  The resin paste of the present invention containing the components as described above preferably has a solid content of 40 to 90% by weight. The solid content is preferably 40% by weight or more from the viewpoint of shape change suppression due to volume reduction after drying the resin paste, and from the viewpoint of improving the fluidity and printing workability of the resin paste, Is preferably 90% by weight or less.

Moreover, it is preferable that the thixotropy index | exponent of the resin paste of this invention is 1.5-8.0. When the thixotropy index is 1.5 or more, the occurrence of sagging of the resin paste supplied and applied by the printing method is suppressed, and the printed shape is easily maintained. The thixotropy index is 8.0 or less. If this is the case, it becomes easy to suppress the occurrence of “chips” or blurring of the resin paste supplied and applied by the printing method. The thixotropy index is defined by a ratio of a value measured with an E-type rotational viscometer at 25 ° C. and a rotational speed of 1 min ⁻¹ to a value measured at a rotational speed of 10 min ⁻¹ . The method for obtaining the thixotropy index will be described in detail in Examples.

Moreover, it is preferable that the viscosity (25 degreeC) of the resin paste of this invention is 5-1000 Pa.s from a viewpoint of printing workability | operativity. The viscosity of the resin paste is preferably adjusted as appropriate depending on the type of printing method. For example, when a mesh or the like is stretched at the mask opening as in a screen mesh plate or the like, it is preferable to adjust to a range of 5 to 100 Pa · s in consideration of detachability of the mesh portion. Is preferably adjusted to a range of 20 to 500 Pa · s. When many voids remain in the resin paste after drying, it is effective to adjust the viscosity to 150 Pa · s or less. In addition, let the said viscosity be a value when it measures by 25 degreeC and rotation speed 0.5min < ^-1 > using an E-type rotational viscometer.

  The semiconductor device of the present invention is not particularly limited as long as the semiconductor element is mounted on the support substrate using the resin paste of the present invention, and the manufacturing process may be according to known methods and conditions. The supply and application of the resin paste onto the support substrate are preferably performed by a printing method. Specifically, for example, a resin paste layer (die bonding layer) is formed on a support substrate by supplying and applying the resin paste of the present invention by a printing method and drying and semi-curing (B-stage). Thereafter, a semiconductor element (chip) such as an IC or LSI can be applied by heating and pressing under appropriate conditions on the resin paste layer, and then the resin paste layer can be post-cured. Note that this post-curing of the resin paste layer may be performed together with the post-curing step of the sealing material when there is no problem in the mounting assembly process.

  The support substrate is not particularly limited. For example, a lead frame such as a 42 alloy lead frame or a copper lead frame, a plastic film such as a polyimide resin, an epoxy resin or a polyimide resin, a polyimide resin on a substrate such as a glass nonwoven fabric, Examples thereof include a material impregnated and cured with a resin composition containing an epoxy resin, a polyimide resin, or the like (prepreg), or a ceramic support member such as alumina.

  Further, although the resin paste of the present invention contains a solvent, most of it is volatilized by the B-stage of the resin paste, so that there is less void in the resin paste layer and the semiconductor device has good mounting reliability. Can be assembled. In addition, after supplying and applying the resin paste of the present invention on the support substrate, if there is no effect on the package reliability, the semiconductor element is heated and pressed without being semi-cured (B-stage). Also good.

  Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto.

<Preparation of resin paste>
Example 1
As a butadiene polymer (A) (base resin) having a carboxylic acid end group, 100 parts by weight of CTBNX-1300 × 9 was weighed and placed in a raking machine. Here, a carbitol acetate solution containing 25 parts by weight of an epoxy resin (YDCH-702) and 15 parts by weight of a phenol resin (H-1) (prepared as a thermosetting resin (B) in advance) is a solvent. 60 parts by weight of carbitol acetate) and 0.5 parts by weight of a curing accelerator (TPPK) were added and mixed.

  Subsequently, as filler (C), 8 parts by weight of Aerosil, which is a fine silica powder, and 60 parts by weight of Trefil E-601 as silicone rubber (D) are added, and the solvent for printing (E) is used for viscosity adjustment. 26 parts by weight of a certain carbitol acetate was added and stirred and kneaded for 1 hour to obtain a resin paste for die bonding (resin paste No. 1, solid content 70.9% by weight).

(Examples 2-5, Comparative Examples 1-3)
The base resin (A), the thermosetting resin (B), the filler (C), the silicone rubber (D) and the solvent (E) are appropriately changed in kind and amount and subjected to the same steps as in Example 1, Resin paste for die bonding was obtained (resin paste Nos. 2 to 8). Table 1 shows the composition of each resin paste.

※各組成の配合量の単位は全て重量部
※表１における略号は次の通りである。ＣＴＢＮＸ−１３００×９：宇部興産（株）製、商品名、カルボン酸末端液状ポリブタジエン（官能基数２．３／ｍｏｌ）、ＣＴＢＮ−１３００×３１：宇部興産（株）製、商品名、カルボン酸末端液状ポリブタジエン（官能基数１．９／ｍｏｌ）、ＣＴＢＮ−１３００×８：宇部興産（株）製、商品名、カルボン酸末端液状ポリブタジエン（官能基数１．８５／ｍｏｌ）、ＹＤＣＨ−７０２：東都化成（株）製、商品名、クレゾールノボラック型エポキシ樹脂（エポキシ当量２２０）、ＥＳＣＮ−１９５：日本化薬（株）製、商品名、クレゾールノボラック型エポキシ樹脂（エポキシ当量２００）、Ｈ−１：明和化成（株）製、商品名、フェノールノボラック樹脂（ＯＨ当量１０６）、ＶＨ−４１７０：大日本インキ化学工業（株）製、商品名、ビスフェノールＡノボラック樹脂（ＯＨ当量１１８）、ＴＰＰＫ：東京化成工業（株）製、商品名、テトラフェニルホスホニウムテトラフェニルボラート、２Ｐ４ＭＨＺ；四国化成工業（株）製、キュアゾール（イミダゾール化合物）、アエロジル：日本アエロジル（株）製、商品名アエロジル＃３８０（シリカの微粉末）、Ｅ−６０１：東レ・ダウコーニング（株）製、商品名、シリコーンエラストマ、ＣＡ：カルビトールアセテート、ＮＭＰ：Ｎ−メチル−２−ピロリドン

* The unit of the blending amount of each composition is all parts by weight. * Abbreviations in Table 1 are as follows. CTBNX-1300 × 9: Ube Industries, trade name, carboxylic acid-terminated liquid polybutadiene (functional group number 2.3 / mol), CTBN-1300 × 31: Ube Industries, trade name, carboxylic acid terminal Liquid polybutadiene (functional group number 1.9 / mol), CTBN-1300 × 8: manufactured by Ube Industries, Ltd., trade name, carboxylic acid-terminated liquid polybutadiene (functional group number 1.85 / mol), YDCH-702: Toto Kasei ( Co., Ltd., trade name, cresol novolac type epoxy resin (epoxy equivalent 220), ESCN-195: Nippon Kayaku Co., Ltd., trade name, cresol novolak type epoxy resin (epoxy equivalent 200), H-1: Meiwa Kasei Product name, phenol novolac resin (OH equivalent 106), VH-4170: manufactured by Dainippon Ink & Chemicals, Inc. Bisphenol A novolak resin (OH equivalent 118), TPPK: manufactured by Tokyo Chemical Industry Co., Ltd., trade name, tetraphenylphosphonium tetraphenylborate, 2P4MHZ; manufactured by Shikoku Chemical Industries, Co., Ltd. Nippon Aerosil Co., Ltd., trade name Aerosil # 380 (silica fine powder), E-601: Toray Dow Corning Co., Ltd. trade name, silicone elastomer, CA: carbitol acetate, NMP: N-methyl- 2-pyrrolidone

<Evaluation of resin paste>
(Viscosity and thixotropy index)
For the resin pastes of the examples and comparative examples, the viscosity and thixotropy index were measured as follows. The results are shown in Table 2.
Viscosity: Viscosity at 25 ° C. was measured using an E-type viscometer manufactured by Toki Sangyo Co., Ltd. with a diameter of 19.4 mm and a 3 ° cone (rotation speed: 0.5 min ⁻¹ ).
Thixotropy index: Using the above viscometer, the viscosities at rotational speeds of 1 min ⁻¹ and 10 min ⁻¹ were measured and determined by the following formula.
[Equation 1]
Thixotropic index = (viscosity at 1 min ⁻¹ ) ^/ (viscosity at 10 min ⁻¹ )

(Peel strength)
The resin paste of each Example and Comparative Example is printed on an organic substrate coated with Solder Resist PSR-4000AUS-5 manufactured by Taiyo Ink Manufacturing Co., Ltd. and dried at 60 ° C. for 15 minutes and at 100 ° C. for 30 minutes. After making this into a B-stage, a 5 × 5 mm silicon chip was pressure-bonded to the B-stage resin paste layer on a 180 ° C. or 250 ° C. hot platen for 5 seconds. The silicon chip is prepared to have a protrusion of 150 μm thickness at the end by half-cutting a 400 μm thick wafer to 250 μm and applying a force in the back side direction. Then, the semiconductor device sample was produced by post-curing the resin paste layer at 180 ° C. for 1 hour.

  Next, about each sample obtained above, the peeling strength at the time of a 20 second heating was measured using the measuring apparatus shown in FIG. The results are shown in Table 2. The measuring apparatus shown in FIG. 1 is an improved push-pull gauge. A sample comprising a substrate 1, a resin paste layer (die bonding material) 2 and a silicon chip 3 is placed on a hot plate 10 to support 11. In a state where the push-pull gauge 13 hung on the protrusion of the silicon chip 3 is moved in the direction indicated by the arrow in the figure, the resin paste chip peeling strength is detected. The thickness (peel strength) can be measured. In general, the higher this value, the less likely reflow cracks will occur.

(Check for cracks and voids)
Resin pastes of each example and comparative example were applied to an E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) substrate having a 0.2 mm thick copper foil peeled on both sides, and the thickness after drying was about 40 μm. After applying to a size of 7 mm square, it was dried in an oven at 120 ° C. for 100 min. Next, after being left for 24 hours in a clean room conditioned at 23 ° C. and 50% RH, a 10 mm square (thickness: 0.5 mm) glass chip was pressure-bonded to the resin paste layer at 120 ° C. and 7 kg for 5 seconds. Furthermore, the temperature was raised from room temperature to 180 ° C. in an oven for 60 minutes, and heat curing was performed at 180 ° C. for 60 minutes, thereby producing a semiconductor device sample. Subsequently, the presence or absence of cracks or voids was visually observed for the obtained resin paste layers of the respective samples. The results are shown in Table 2.

  As shown in Table 2, no. It was confirmed that the resin pastes 1 to 5 (Examples 1 to 5) exhibited high peel adhesion at a chip attaching temperature of 180 ° C. or 250 ° C., and were excellent in heat adhesion and heat resistance. No. Since the resin pastes 1 to 5 (Examples 1 to 5) were blended with 30% by weight or more of the silicone rubber in the total resin components, the resin paste layer (die bonding layer) after post-curing even without pre-bake treatment before die bonding No cracks or voids were observed inside.

It is a schematic sectional drawing of the apparatus which measures peel adhesive force.

Explanation of symbols

1 substrate 2 die bonding material 3 silicon chip 10 hot plate 11 support 12 support 13 push-pull gauge

Claims (5)

  A butadiene polymer having a carboxylic acid end group (A), a thermosetting resin (B), a filler (C), a silicone rubber (D), and a printing solvent (E). A resin paste for die bonding, characterized in that the resin component contains 30% by weight or more.   2. The die bonding according to claim 1, wherein the solid content is 40 to 90 wt%, the thixotropy index is 1.5 to 8.0, and the viscosity (25 ° C.) is 5 to 1000 Pa · s. Resin paste. Applying a predetermined amount of the die bonding resin paste according to claim 1 or 2 on a support substrate;
Drying the applied resin paste to form a B-stage;
A step of mounting a semiconductor element on the B-staged resin paste, and a step of post-curing the resin paste;
A method for manufacturing a semiconductor device, comprising: Applying a predetermined amount of the die bonding resin paste according to claim 1 or 2 on a support substrate;
A method of manufacturing a semiconductor device, comprising: a step of mounting a semiconductor element on the applied resin paste; and a step of curing the resin paste.   A semiconductor device obtained by the method for manufacturing a semiconductor device according to claim 3.

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