JP2008112972A - Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide resin paste for die bonding for easily supplying/applying a semiconductor chip by a print method to a substrate to which a semiconductor chip should be attached at a relatively low temperature, and for achieving the following processes even by saving the hardening process of resin paste after attaching the semiconductor chip, that is, for achieving sufficient thermal resistance and chip adhesive property in the B-stage state and sufficient thermal resistance and chip adhesive property even after the hardening. <P>SOLUTION: This resin paste for die bonding is characterized to contain a silane modification resin, a thermosetting resin, a filler and solvent for printing which are expressed by general form (I). In this case, R in this formula is -CH<SB>3</SB>or -OCH<SB>3</SB>, and X is the resin section, and n is the integers of 1 to 7. Also, a plurality of existing R may be equal or different. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a resin paste for die bonding, a method for manufacturing a semiconductor device, and a semiconductor device, and more specifically, a bonding material (die bonding) between a semiconductor element such as IC or LSI and a support member such as a lead frame or an insulating support substrate. The present invention relates to a die bonding resin paste used as a material, a method of manufacturing a semiconductor device using the same, and a semiconductor device.

  Conventionally, Au—Si eutectic alloy, solder, silver paste, or the like is known as a bonding material between an IC or LSI and a lead frame. Moreover, the adhesive film using a specific polyimide resin and the adhesive film for die bonding which added the electroconductive filler or the inorganic filler to the specific polyimide resin are proposed previously (refer patent documents 1-3).

Japanese Patent Application Laid-Open No. 07-228697 Japanese Patent Laid-Open No. 06-145639 Japanese Patent Laid-Open No. 06-264035

  Although the Au—Si eutectic alloy has high heat resistance and moisture resistance, it has a problem of being easily broken when applied to a large chip because of its large elastic modulus. In addition, the Au—Si eutectic alloy has a drawback that it is expensive. On the other hand, although solder is cheap, it is inferior in heat resistance, and its elastic modulus is as high as that of an Au—Si eutectic alloy, so that it is difficult to apply it to a large chip.

  On the other hand, silver paste is inexpensive, has high moisture resistance, has a lower elastic modulus than Au—Si eutectic alloy and solder, and has heat resistance enough to be applied to a thermocompression bonding wire bonder at 350 ° C. Therefore, silver paste is currently the mainstream of die bonding materials. However, as ICs and LSIs become more highly integrated and the size of the chip grows, the silver paste is spread over the entire surface of the chip and applied to the IC or LSI and the lead frame. It is difficult to do.

  In addition, with the recent miniaturization and weight reduction of packages, the use of insulating support substrates has become widespread, and for the purpose of reducing manufacturing costs, let's supply die bonding materials with a mass-productive printing method. The method has been attracting attention. In such a situation, when an adhesive film as described in Patent Documents 1 to 3 is to be efficiently supplied and pasted to an insulating support substrate, the adhesive film is previously cut (or punched out) into a chip size. It is necessary to paste.

  In the method of cutting the adhesive film into a chip size and sticking it to the substrate, a sticking device for increasing the production efficiency is required. Further, in the method in which the adhesive film is punched and a plurality of chips are pasted together, the adhesive film is likely to be wasted. Furthermore, since most of the insulating support substrate has an inner layer wiring formed inside the substrate, the surface to which the adhesive film is applied has many irregularities, and voids are created when the adhesive film is applied, and the reliability tends to decrease. .

  In addition, in the method of previously forming a die bonding material on a substrate and attaching a semiconductor chip thereto, the die bonding material applied to the substrate is dried and semi-cured (B-stage) before attaching the semiconductor chip. The semiconductor chip is pressure-bonded, and the die bonding material is cured in an oven at 180 ° C. for 1 hour as post-curing. However, recently, there has been a demand for a die bonding material that can perform subsequent assembly processes, that is, wire bonding and sealing, even if the post-curing process is omitted from the viewpoint of process management and shortening of assembly time. Usually, the working temperature of wire bonding is 120 to 150 ° C., and the working temperature of sealing is 170 ° C. to 190 ° C. Then, for example, the sealing material is heated at 180 ° C. for 2 to 5 hours as a curing process. When the post-curing process is omitted, the die bonding material after chip pressing is post-cured simultaneously in the sealing material curing process after the wire bonding and sealing processes. Therefore, in the assembly process without the post-curing process, it is necessary that the die bonding material in the B stage state has heat resistance at about 180 ° C. and chip adhesion. In addition, after post-curing with the sealing material, a solder reflow process is performed. Since the maximum temperature at this time is 250 ° C. to 260 ° C., the post-cured paste is required to have heat resistance and chip adhesion at 250 ° C. to 260 ° C.

  The present invention has been made in view of such circumstances, and can be easily supplied and applied by a printing method to a substrate on which a semiconductor chip needs to be attached at a relatively low temperature. Even if the curing step of the resin paste after application is omitted, the subsequent steps are possible, that is, sufficient heat resistance and chip adhesion can be obtained in the B-stage state, and sufficient heat resistance even after post-curing. An object of the present invention is to provide a resin paste for die bonding that can have chip adhesiveness. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the die bonding resin paste, and a semiconductor device.

［式中、Ｒは、−ＣＨ_３又は−ＯＣＨ_３を示し、Ｘは樹脂部分を示し、ｎは１〜７の整数を示す。なお、複数存在するＲは同一でも異なっていてもよい。］ In order to achieve the above object, the present invention provides a die bonding resin paste containing a silane-modified resin represented by the following general formula (I), a thermosetting resin, a filler, and a printing solvent. provide.

[Wherein, R represents a -CH ₃ or -OCH _3, X represents a resin portion, n is an integer of 1-7. A plurality of R may be the same or different. ]

  According to such a resin paste for die bonding, it can be easily supplied and applied by a printing method to a substrate on which a semiconductor chip needs to be attached at a relatively low temperature, and is represented by the general formula (I). By including the silane-modified resin, sufficient heat resistance and chip adhesion can be obtained in the B-stage state, so that the subsequent assembly process can be performed even if the post-curing process after the semiconductor chip is attached is omitted. In addition, it is possible to obtain an effect that sufficient heat resistance and chip adhesion can be obtained even after post-curing. Moreover, in the above-mentioned resin paste for die bonding, high reliability can be obtained after post-curing with a thermosetting resin, and thixotropy necessary for printing can be imparted with a filler, and further, viscosity can be increased with a printing solvent. Can be adjusted.

  In the silane-modified resin, the resin portion represented by X in the general formula (I) is at least one selected from the group consisting of a polyimide resin, a polyamideimide resin, a polyurethane resin, an epoxy resin, and a phenol resin. A portion made of resin is preferable. By using such a silane-modified resin, the resin paste for die bonding can obtain more sufficient heat resistance and chip adhesion both in the B-stage state and after post-curing.

  Moreover, it is preferable that the resin paste for die bonding of this invention further contains a polyurethane imide resin. Thereby, the favorable fluidity | liquidity in a die attach process can be provided to a resin paste.

  The present invention also includes a coating step of coating the die bonding resin paste of the present invention on a substrate to form a coating film, and a semiconductor chip mounting step of mounting a semiconductor chip on the coating film. An apparatus manufacturing method is provided.

  According to such a method for manufacturing a semiconductor device, since the die bonding resin paste of the present invention is used, a semiconductor chip can be attached on a substrate at a relatively low temperature, and excellent heat resistance and chip adhesion. Can be obtained.

  In addition, the method for manufacturing a semiconductor device of the present invention further includes a drying step of drying the coating film to form a B-stage after the coating step, and the B-staged coating film on the coating step of the semiconductor chip. It is preferable to mount a semiconductor chip.

  Since the resin paste for die bonding of the present invention can obtain sufficient heat resistance and chip adhesion both in the B-stage state and after post-curing, it is a more reliable semiconductor by including the drying step. A device can be obtained.

  The present invention further provides a semiconductor device obtained by the method for manufacturing a semiconductor device of the present invention. Such a semiconductor device can obtain excellent heat resistance and chip adhesiveness because the semiconductor chip is bonded onto the substrate using the die bonding resin paste of the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, the resin paste for die bonding which can be easily supplied and apply | coated with a printing method with respect to the board | substrate which needs to affix a semiconductor chip at comparatively low temperature can be provided. In addition, the resin paste for die bonding of the present invention has heat resistance, is easy to handle, and is excellent in low stress property and low temperature adhesion property. Furthermore, since the heat resistance in the B-stage state is excellent, the post-curing process after the semiconductor chip pressure bonding can be omitted, which contributes to process management and assembly time reduction during the assembly of the semiconductor device. Further, excellent heat resistance and chip adhesion can be obtained even after post-curing. The resin paste for die bonding of the present invention can be suitably used for an insulating support substrate such as an organic substrate and a copper lead frame for die bonding, and can also be used for a 42 alloy lead frame. Furthermore, according to the present invention, it is possible to provide a semiconductor device manufacturing method using the die bonding resin paste of the present invention and a semiconductor device manufactured by the manufacturing method.

  Hereinafter, preferred embodiments of the present invention will be described in detail.

  The resin paste for die bonding according to the present invention (hereinafter, simply referred to as “resin paste” in some cases) is (A) a silane-modified resin represented by the following general formula (I) (hereinafter, “(A) component”) ")").

［式中、Ｒは、−ＣＨ_３又は−ＯＣＨ_３を示し、Ｘは樹脂部分を示し、ｎは１〜７の整数を示す。なお、複数存在するＲは同一でも異なっていてもよい。］

[Wherein, R represents a -CH ₃ or -OCH _3, X represents a resin portion, n is an integer of 1-7. A plurality of R may be the same or different. ]

  In addition to the component (A), the resin paste of the present invention comprises (B) polyurethane imide resin (hereinafter sometimes referred to as “component (B)”) and (C) butadiene having a carboxylic acid end group. It is preferable to further contain a polymer (homopolymer or copolymer) (hereinafter sometimes referred to as “component (C)”). The resin paste of the present invention comprises (D) a thermosetting resin (hereinafter sometimes referred to as “(D) component”) and (E) filler (hereinafter sometimes referred to as “(E) component”). And (F) a printing solvent (hereinafter sometimes referred to as “component (F)”) as an essential component. Hereinafter, each component will be described in detail.

  (A) The silane-modified resin is represented by the above general formula (I), and greatly contributes to the chip adhesive force of the B-stage resin paste. Preferred examples of the resin constituting the resin portion represented by X in the general formula (I) include a polyimide resin, a polyamideimide resin, a polyurethane resin, an epoxy resin, and a phenol resin. Among these, phenol resin and epoxy resin are particularly preferable from the viewpoint of chemical affinity with (D) thermosetting resin.

  Preferred examples of the phenol resin include those having at least two phenolic hydroxyl groups in the molecule. For example, phenol novolak resin, cresol novolac resin, bisphenol A novolak resin, poly-p-vinylphenol resin, phenol aralkyl resin. Etc. Specifically, as the (A) silane-modified resin having a phenol resin portion, a compound represented by the following general formula (II) is commercially available from Arakawa Chemical Industries, Ltd.

［式中、Ｒは、−ＣＨ_３又は−ＯＣＨ_３を示し、ｍは２〜８の整数を示す。］

[Wherein, R represents —CH ₃ or —OCH ₃ , and m represents an integer of 2 to 8. ]

  The epoxy resin preferably includes at least two epoxy groups in the molecule, and a phenol glycidyl ether type epoxy resin is particularly preferable from the viewpoint of curability and cured product characteristics. . Examples of phenol glycidyl ether type epoxy resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F, or a condensate of halogenated bisphenol A and epichlorohydrin; glycidyl ether of phenol novolac resin; cresol novolac resin Examples thereof include glycidyl ether; glycidyl ether of bisphenol A novolak resin, and the like.

  The blending amount of the component (A) in the resin paste is preferably 0.1 to 15% by mass, more preferably 0.5 to 10% by mass, based on the total solid content in the resin paste. If the blending amount exceeds 15% by mass, the hygroscopicity of the resin paste tends to be high and storage stability tends to be poor, and if it is less than 0.1% by mass, the chip adhesive strength at the B stage decreases. There is a fear.

［式中、Ｒ^１は芳香族環又は脂肪族環を含む２価の有機基を示し、Ｒ^２は分子量１００〜１０，０００の２価の有機基を示し、Ｒ^３は４個以上の炭素原子を含む４価の有機基を示し、ｒ及びｓは各々独立に１〜１００の整数を示す。］ The polyurethaneimide resin as component (B) is preferably one represented by the following general formula (III).

[Wherein R ¹ represents a divalent organic group containing an aromatic ring or an aliphatic ring, R ² represents a divalent organic group having a molecular weight of 100 to 10,000, and R ³ represents 4 or more carbon atoms. The tetravalent organic group containing an atom is shown, r and s show the integer of 1-100 each independently. ]

で表される構造を１０〜１００ｍｏｌ％含むことがより好ましい。 In the general formula (III), the divalent organic group containing an aromatic ring or an aliphatic ring represented by R ¹ is preferably a diisocyanate residue, and the following general formula (IV);

It is more preferable that 10-100 mol% of the structure represented by these is included.

等が挙げられ、これらは１種類あるいは２種類以上を組み合わせて用いることができる。 Further, as the remaining diisocyanate residue, the following formula:

These can be used, and these can be used alone or in combination of two or more.

The divalent organic group having a molecular weight of 100 to 10,000 represented by R ² in the general formula (III) is preferably a diol residue, and the following general formula (V);
_{- (CH 2 -CH 2 -CH 2} -CH 2 -O) - (V)
It is more preferable that the structure which consists of a repeating unit represented by 10 to 100 mol% is included.

等の繰り返し単位を有するものが挙げられ、これらは１種類あるいは２種類以上を組み合わせて用いることができる。これらの重量平均分子量は１００〜１０，０００であることが好ましく、５００〜５，０００であることがより好ましい。 Further, as the remaining diol residue, the following formula:

These have repeating units such as, and these can be used alone or in combination of two or more. These weight average molecular weights are preferably 100 to 10,000, and more preferably 500 to 5,000.

等が挙げられる。これらは１種類あるいは２種類以上を組み合わせて用いることができる。 The tetravalent organic group containing 4 or more carbon atoms represented by R ³ in the general formula (III) is preferably a tetracarboxylic anhydride residue, and has the following formula:

Etc. These can be used alone or in combination of two or more.

  Moreover, r and s in the said general formula (III) need to be an integer of 1-100 each independently, and it is more preferable that it is an integer of 1-50.

  (B) The polyurethaneimide resin can be synthesized by an ordinary method such as a solution polymerization method. For example, in the case of a solution polymerization method, a diisocyanate and a diol are dissolved in a solvent in which a polyurethaneimide resin to be generated is dissolved, such as N-methyl-2-pyrrolidone (NMP), and the temperature is 70 ° C. to 180 ° C. for 1 hour to 5 hours. React to synthesize urethane oligomer. Next, tetracarboxylic dianhydride is added and reacted at 70 to 180 ° C. for 1 to 10 hours to obtain an NMP solution of a polyurethaneimide resin. Thereafter, in some cases, the terminal of the polyurethane imide resin can be modified by further adding a monohydric alcohol, oxime, amine, isocyanate, acid anhydride or the like to continue the reaction. In the synthesis, water, alcohol, tertiary amine or the like can be used as a catalyst.

  The obtained polyurethaneimide resin solution can also be separated from the polyurethaneimide resin by a reprecipitation method with water or the like according to the purpose. The composition ratio of diisocyanate and diol constituting the urethane oligomer is preferably 0.1 to 1.0 mol of the diol component with respect to 1.0 mol of diisocyanate. The composition ratio of the polyurethane oligomer and the tetracarboxylic dianhydride constituting the polyurethaneimide resin is preferably 0.1 to 2.0 mol of tetracarboxylic dianhydride with respect to 1.0 mol of the polyurethane oligomer.

  The (B) polyurethaneimide resin in the present invention preferably has a polystyrene-equivalent weight average molecular weight of 5,000 to 500,000 as measured by gel permeation chromatography using tetrahydrofuran as a solvent, and is preferably 10,000 to 100,000. More preferably, it is 000. If the weight average molecular weight is less than 5,000, the strength of the resin tends to be low, and if it exceeds 500,000, the solubility of the resin tends to be poor.

  It is preferable that the compounding quantity of (B) component in a resin paste is 20-60 mass% on the basis of the solid content whole quantity in a resin paste. If this amount exceeds 60% by mass, the curability tends to decrease, and if it is less than 20% by mass, the fluidity in the B-stage state may decrease.

  The butadiene homopolymer or copolymer having a carboxylic acid end group as the component (C) is, for example, a low molecular weight liquid polybutadiene having acrylonitrile introduced into the main chain and having a carboxylic acid at the end, as one that can be suitably used. “Hycer CTB-2009 × 162”, “CTBN-1300 × 31”, “CTBN-1300 × 8”, “CTBN-1300 × 13”, “CTBNX-1300 × 9” (all manufactured by Ube Industries) And “NISSO-PB-C-2000” (manufactured by Nippon Soda Co., Ltd.), which is a low molecular weight liquid polybutadiene having a carboxylic acid group. These can be used alone or in combination of two or more.

  As a thermosetting resin which is (D) component, an epoxy resin is mentioned as a preferable thing, for example. Moreover, as (D) component, you may use the resin mixture containing an epoxy resin, a phenol resin or the compound which has a phenolic hydroxyl group in a molecule | numerator, and a hardening accelerator.

  The epoxy resin contains at least two epoxy groups in the molecule, and a phenol glycidyl ether type epoxy resin is preferable from the viewpoint of curability and cured product characteristics. Examples of such resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F, or a condensate of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolac resin, glycidyl ether of cresol novolac resin, bisphenol A novolak resin. And glycidyl ether. These can be used alone or in combination of two or more.

  (D) When using an epoxy resin as a component, it is preferable that the compounding quantity is 30 mass% or less on the basis of the solid content whole quantity of a resin paste. When this compounding quantity exceeds 30 mass%, there exists a tendency for the storage stability of a resin paste to fall easily.

  The phenol resin has at least two phenolic hydroxyl groups in the molecule, and examples thereof include a phenol novolac resin, a cresol novolac resin, a bisphenol A novolac resin, poly-p-vinylphenol, and a phenol aralkyl resin. These can be used alone or in combination of two or more.

  In the component (D), the compounding amount of the phenol resin or the compound having a phenolic hydroxyl group in the molecule is preferably 0 to 150 parts by mass, and 0 to 120 parts by mass with respect to 100 parts by mass of the epoxy resin. It is more preferable. When this compounding quantity exceeds 150 mass parts, there exists a possibility that sclerosis | hardenability may become inadequate.

  The curing accelerator is not particularly limited as long as it is used for curing the epoxy resin. Examples of such a curing accelerator include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo. (5,4,0) undecene-7-tetraphenylborate and the like. These can be used alone or in combination of two or more.

  In the component (D), the blending amount of the curing accelerator is preferably 0 to 50 parts by mass, and more preferably 0 to 20 parts by mass with respect to 100 parts by mass of the epoxy resin. When this compounding quantity exceeds 50 mass parts, there exists a possibility that the storage stability of a resin paste may fall.

  Moreover, as (D) thermosetting resin, the imide compound which has at least 2 thermosetting imide group in 1 molecule can also be used. Examples of such compounds include orthobismaleimide benzene, metabismaleimide benzene, parabismaleimide benzene, 1,4-bis (p-maleimidocumyl) benzene, 1,4-bis (m-maleimidocumyl). Examples include benzene. These can be used alone or in combination of two or more. Furthermore, as the imide compound, it is also preferable to use imide compounds represented by the following general formulas (VI) to (VIII).

In the above formulas (VI) to (VIII), Y and Z are each independently —O—, —CH ₂ —, —CF ₂ —, —SO ₂ —, —S—, —CO—, —C (CH ₃ ) ₂ -or -C (CF ₃ ) _2- , wherein R ¹¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ , R ¹⁶ , R ¹⁷ and R ¹⁸ are each independently a hydrogen atom, lower alkyl A group, a lower alkoxy group, a fluorine atom, a chlorine atom or a bromine atom, D represents a dicarboxylic acid residue having an ethylenically unsaturated double bond, and p represents an integer of 0 to 4.

  Examples of the filler that is the component (E) include conductive (metal) fillers such as silver powder, gold powder, and copper powder; inorganic fillers such as silica, alumina, titania, glass, iron oxide, and ceramic.

  Among the fillers, conductive (metal) fillers such as silver powder, gold powder, and copper powder are added for the purpose of imparting conductivity, heat conductivity, or thixotropy to the adhesive. Further, inorganic fillers such as silica, alumina, titania, glass, iron oxide, and ceramic are added for the purpose of imparting low thermal expansion, low moisture absorption, and thixotropy to the adhesive. These can be used alone or in combination of two or more.

Moreover, you may add an inorganic ion exchanger as a filler which improves the electrical reliability of a semiconductor device. As the inorganic ion exchanger, ions extracted from an aqueous solution when the paste cured product is extracted in hot water, for example, ion traps such as Na ⁺ , K ⁺ , Cl ⁻ , F ⁻ , RCOO ⁻ , Br ^−, etc. Those whose action is recognized are effective. Examples of such ion exchangers include naturally produced zeolites, natural minerals such as zeolites, acid clay, dolomite, hydrotalcites, and artificially synthesized synthetic zeolites.

  These conductive fillers or inorganic fillers can be used singly or in combination of two or more. In addition, one or more kinds of conductive fillers and one or more kinds of inorganic fillers may be mixed and used as long as the physical properties are not impaired.

  (E) It is preferable that the compounding quantity of a filler is 300 mass parts or less with respect to 100 mass parts of said (D) component, and it is more preferable that it is 200 mass parts or less. The blending amount of the filler is preferably 10 parts by mass or more from the viewpoint of imparting sufficient thixotropy (for example, thixotropy index: 1.5 or more) to the resin paste. Furthermore, the blending amount of the filler is preferably 300 parts by mass or less from the viewpoint of adhesiveness. When the blending amount exceeds 300 parts by mass, the elastic modulus of the cured product is increased, and as a result, the stress of the die bonding material is increased. There is a possibility that the relaxation ability is lowered and the mounting reliability of the semiconductor device is lowered.

  (E) Mixing and kneading of the filler is performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a triple roll, and a ball mill.

  The printing solvent as component (F) is preferably selected from solvents that can uniformly knead or disperse filler (E). In view of preventing solvent volatilization during printing, it is preferable to select a solvent having a boiling point of 100 ° C. or higher.

  Examples of the printing solvent include N-methyl-2-pyrrolidinone, diethylene glycol dimethyl ether (also referred to as diglyme), triethylene glycol dimethyl ether (also referred to as triglyme), diethylene glycol diethyl ether, 2- (2-methoxyethoxy) ethanol, γ -Butyrolactone, isophorone, carbitol, carbitol acetate, 1,3-dimethyl-2-imidazolidinone, 2- (2-butoxyethoxy) ethyl acetate, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, anisole Other examples include solvents mainly composed of petroleum distillates used as solvents for printing inks. These can be used individually by 1 type or in mixture of 2 or more types.

  The blending amount of the (F) printing solvent is preferably blended so that the solid content of the resin paste is 40 to 90% by mass. When the solid content is 40% by mass or more, it is preferable from the viewpoint of shape change suppression based on volume reduction after drying the paste, and when it is 90% by mass or less, it is preferable from the viewpoint of improving the fluidity of the paste and printing workability.

  When bubbles and voids are noticeable during the printing of the resin paste, it is effective to add additives such as a defoaming agent, a defoaming agent, and a defoaming agent to the above-mentioned (F) printing solvent. From the viewpoint of exerting the foam suppression effect, the amount added is preferably 0.01% by mass or more based on the total amount of the printing solvent and the additive, and adhesiveness and viscosity stability of the paste. In view of the above, it is preferably 10% by mass or less.

  Moreover, in order to improve adhesive force, you may add a silane coupling agent, a titanium coupling agent, a nonionic surfactant, a fluorine-type surfactant, a silicone type additive etc. in a resin paste suitably.

  The thixotropy index of the resin paste is preferably 1.0 to 8.0. When the thixotropy index of the resin paste is 1.0 or more, the occurrence of sagging or the like in the paste supplied and applied by the printing method tends to be suppressed, and the printed shape tends to be kept good. Furthermore, when the thixotropy index is 8.0 or less, it tends to be possible to suppress the occurrence of “chips” or scumming in the paste supplied and applied by the printing method.

  The viscosity (25 ° C.) of the resin paste is preferably 5 to 1000 Pa · s. It is suitable from the viewpoint of printing workability that the viscosity of the resin paste is 5 to 1000 Pa · s. The viscosity of the resin paste is preferably adjusted as appropriate depending on the type of printing method.For example, when a mesh or the like is stretched on the mask opening, such as a screen mesh plate, the removal of the mesh portion is taken into consideration. In the case of a stencil plate or the like, it is preferably adjusted in the range of 20 to 500 Pa · s. Moreover, when many voids remain in the paste after drying, it is effective to adjust the viscosity to 150 Pa · s or less.

  The said viscosity shall be a value when it measures on 25 degreeC and rotation speed 0.5rpm conditions using an E-type rotational viscometer. The thixotropy index is defined by a ratio between a value measured with an E-type rotational viscometer at 25 ° C. and a rotational speed of 1 rpm and a value measured at 25 ° C. and a rotational speed of 10 rpm (thixotropic index). = (Viscosity at 1 rpm) / (viscosity at 10 rpm)).

  The resulting resin paste for die bonding includes a lead frame such as a 42 alloy lead frame or a copper lead frame; or a plastic film such as a polyimide resin, an epoxy resin, or a polyimide resin; A resin, epoxy resin, polyimide resin or other plastic impregnated and cured; or a ceramic support member such as alumina can be supplied and applied by a printing method to form a B stage. Thereby, a support substrate with a B stage adhesive is obtained. A semiconductor element (chip) such as an IC or LSI is attached to the support substrate with the B stage adhesive, and the chip is bonded to the support substrate by heating. Thereafter, the chip is mounted on the support substrate by a step of post-curing the resin paste. This post-curing of the resin paste may be performed together with the post-curing process of the sealing material when there is no problem in the mounting assembly process.

  The method for manufacturing a semiconductor device according to the present invention preferably includes at least a coating step of applying a resin paste on a substrate to form a coating film, and a semiconductor chip mounting step of mounting a semiconductor chip on the coating film. Is a method that further includes a drying step of drying the coating film to form a B-stage after the coating step, and more specifically includes the above-described steps. The semiconductor device according to the present invention is manufactured by a manufacturing method including the above steps.

  The die bonding resin paste contains a solvent, but when used in a semiconductor device manufacturing method, most of the solvent is volatilized by forming a B stage in the drying process. It is possible to assemble a semiconductor device with a small amount and good mounting reliability.

  On the other hand, after supplying and applying the resin paste by the printing method, if there is no effect on the package reliability, the semiconductor element can be attached without drying and semi-curing, and then the chip can be bonded to the support substrate by heating. .

  Therefore, another method of manufacturing a semiconductor device according to the present invention includes the steps of applying a predetermined amount of the above-mentioned die bonding resin paste on a substrate and mounting the semiconductor chip on the resin paste. The semiconductor device according to the invention is manufactured by a manufacturing method including the above steps.

  Here, FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device (substrate having a memory BOC structure) according to the present invention. In the semiconductor device 100 shown in FIG. 1, a semiconductor chip 2 such as an IC chip is bonded to a substrate 6 having solder balls 8 via an adhesive 4 made of a resin paste for die bonding of the present invention. Here, the solder balls 8 are formed on the circuit layer 14 formed on the surface of the substrate 6. A resist layer 16 is formed on the circuit layer 14. The semiconductor device 100 has a configuration in which the connection terminal of the semiconductor chip 2 is electrically connected to the substrate 6 via a wire 10 such as a gold wire and is further sealed with a sealing resin 12.

  Hereinafter, based on an Example and a comparative example, this invention is demonstrated further more concretely.

(Examples 1-7 and Comparative Examples 1-9)
Diphenylmethane-4,4′-diisocyanate (1.0 mol), diphenylmethane-2,4′-diisocyanate (1.0 mol), and polytetramethylene glycol (0.8 mol) having a weight average molecular weight of 1,000 After reacting in methyl-2-pyrrolidone at 100 ° C. for 1 hour in a nitrogen atmosphere, 4,4′-oxydiphthalic anhydride (1.0 mol) and 1-methyl-2-pyrrolidone (60 0.0 mol) was added, and the mixture was further stirred at 100 ° C. for 3 hours. Subsequently, benzyl alcohol (0.49 mol) was further added and stirred at 100 ° C. for 1 hour to complete the reaction. The obtained solution was put into vigorously stirred water, and the produced precipitate was filtered off and dried in vacuum at 80 ° C. for 8 hours to obtain a polyurethaneimide resin. As a result of measuring the obtained polyurethane imide resin using GPC, it was Mw = 93,700 and Mn = 38,800 in terms of polystyrene. Moreover, the obtained polyurethane imide resin was melt | dissolved in carbitol acetate (CA) by solid content concentration of 40 mass%, and the polyurethane imide resin solution was obtained.

  In addition, 14.08 parts by mass of cresol novolac type epoxy resin (trade name: YDCN-702S, manufactured by Toto Kasei Co., Ltd., epoxy equivalent 200), bisphenol A novolac resin (trade name: VH-4170, Dainippon Ink & Chemicals, Inc.) Co., Ltd., OH equivalent 118) 9.92 parts by mass of a carbitol acetate (36 parts by mass) solution was prepared. Similarly, a carbitol acetate (30 parts by mass) solution containing 11.73 parts by mass of a cresol novolac type epoxy resin (YDCN-702S) and 8.27 parts by mass of a bisphenol A novolac resin (VH-4170) was prepared. Furthermore, carboxylic acid-terminated liquid polybutadiene (trade name: CTBNX-1300 × 9, Ube Industries, Ltd., functional group number 2.3 / mol), tetraphenylphosphonium tetraphenylborate (trade name: TPPK, Tokyo Chemical Industry ( ), Aerosil (trade name: AEROSIL 50, trade name: AEROSIL 380, Nippon Aerosil Co., Ltd., fine powder of silica), and KBM-403, 603, 903, 573, 803 as silane coupling agents , KBE-403 (manufactured by Shin-Etsu Chemical Co., Ltd., trade name), A174 (manufactured by Nihon Unicar Co., Ltd., trade name), and P501 (trade name, silane-modified phenol, manufactured by Arakawa Chemical Industries, Ltd.) Resin and OH equivalent (270) were prepared.

  These materials were put in a rough machine so as to have the ratio shown in the following Tables 1 to 3 in terms of solid mass ratio, kneaded, and then defoamed and kneaded for 1 hour at 5 Torr or less. Examples 1 to 7 and Comparative Examples 1-9 resin pastes for die bonding were obtained. In addition, the compounding quantity of the carbitol acetate (CA) in Tables 1-3 is the quantity of the carbitol acetate contained as a solvent in the polyurethane imide resin solution and the carbitol acetate solution of the epoxy resin and the phenol resin. Is shown.

  Further, as the characteristics of the resin paste, the hot die shear strength at 180 ° C. after the semiconductor chip press-bonding and the hot die shear strength at 250 ° C. after the semiconductor chip press-bonding and post-curing of the resin paste were measured.

  The method for measuring the die shear strength during heating at 180 ° C. is as follows. The resin paste was printed on a 42 alloy lead frame and dried in an oven at 150 ° C. for 70 minutes to form a B-stage coating film (die bonding layer). Thereafter, a 5 × 5 mm silicon chip (thickness 0.5 mm) was pressure-bonded on the die bonding layer for 1 second on a 180 ° C. hot platen under a load of 1.5 kg. This was measured for shear strength (kgf / chip) at 180 ° C. using an automatic adhesive strength tester (trade name: series-4000, manufactured by Daisy). The results are shown in Tables 1-3.

  The method for measuring the hot die shear strength at 250 ° C. is as follows. The resin paste was printed on a 42 alloy lead frame and dried in an oven at 120 ° C. for 60 minutes to form a B-stage coating film (die bonding layer). Thereafter, a 5 × 5 mm silicon chip (thickness 0.5 mm) was pressure-bonded on the die bonding layer for 1 second on a 180 ° C. hot platen under a load of 1.5 kg. Subsequently, it was heated in an oven at 180 ° C. for 60 minutes and post-cured. This was measured for shear strength (kgf / chip) at 250 ° C. using an automatic adhesive strength tester (trade name: series-4000, manufactured by Daisy). The results are shown in Tables 1-3.

  As shown in Tables 1 to 3, the resin pastes of the present invention (Examples 1 to 7) are the conventional resin pastes (comparative examples) in the hot die shear strength (180 ° C.) after printing, B-staging, and chip pressing. 1, 2) and a resin paste using various silane coupling agents (Comparative Examples 3 to 9) showed high chip adhesion. In addition, the heat-resistant die shear strength at 250 ° C. after post-curing maintains high heat resistance equivalent to or higher than that of the comparative example, and has high chip adhesion and heat resistance both after B-stage and after post-curing. It was confirmed that it has sex.

It is a schematic cross section showing one embodiment of a semiconductor device of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 2 ... Semiconductor chip, 4 ... Adhesive, 6 ... Board | substrate, 8 ... Solder ball, 10 ... Wire, 12 ... Sealing resin, 100 ... Semiconductor device.

Claims (6)

A resin paste for die bonding containing a silane-modified resin represented by the following general formula (I), a thermosetting resin, a filler, and a printing solvent.

[Wherein, R represents a -CH ₃ or -OCH _3, X represents a resin portion, n is an integer of 1-7. A plurality of R may be the same or different. ]   2. The die bonding according to claim 1, wherein the resin portion represented by X is a portion made of at least one resin selected from the group consisting of a polyimide resin, a polyamideimide resin, a polyurethane resin, an epoxy resin, and a phenol resin. Resin paste.   The resin paste for die bonding according to claim 1 or 2, further comprising a polyurethaneimide resin. An application step of applying the resin paste for die bonding according to any one of claims 1 to 3 on the substrate to form a coating film;
A semiconductor chip mounting step of mounting a semiconductor chip on the coating film;
A method for manufacturing a semiconductor device, comprising: After the coating step, further includes a drying step of drying the coating film to make a B-stage,
The method for manufacturing a semiconductor device according to claim 4, wherein in the semiconductor chip mounting step, a semiconductor chip is mounted on the B-staged coating film.   A semiconductor device obtained by the method for manufacturing a semiconductor device according to claim 4.

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