JP2007142117A - Die-bonding paste and semiconductor device using same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a die-bonding paste in which a high adhesive strength upon heating is high; in which a cured substance is excellent in a stress relaxation property; and which is suitable for adhering a large-sized chip such as an IC or the like, in particular, a copper frame, does not cause a characteristic failure due to a chip crack or a warping of a chip in an IC assembly step, has a low temperature speed curing property and a long usable period, and does not cause voids in the cured substance; and to provide a semiconductor device at a high reliability. <P>SOLUTION: The die-bonding paste contains an epoxy resin, a phenol compound having a specific structure, an aluminum chelate compound, and an inorganic filler as essential components. The semiconductor device uses the die-bonding paste. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention provides a cured product having excellent thermal adhesive strength and excellent stress relaxation properties used for bonding a semiconductor element such as an IC or LSI (hereinafter also referred to as a chip) to a metal frame or the like. The present invention relates to a die bonding paste and a highly reliable semiconductor device using the same.

  Due to recent remarkable developments in the electronics industry, semiconductor devices have evolved into transistors, ICs, LSIs, and super LSIs. The degree of integration of circuits in these semiconductor devices has increased dramatically, and mass production has become possible. With the popularization of semiconductor products, improvement of workability and cost reduction in mass production have become important issues. Conventionally, a semiconductor element is usually bonded to a conductor such as a metal frame by an Au—Si eutectic method and then sealed with a hermetic seal to obtain a semiconductor product. However, from the viewpoint of workability and cost in mass production, a resin sealing method has been developed and is now generalized. Along with this, as a method for improving the Au—Si eutectic method in the mounting process, a solder method or a resin paste, that is, a method using a mounting resin has been taken up.

 However, the solder method is disadvantageous in that it is low in reliability and easily contaminates the electrode of the element, and its use is limited to elements of power transistors and power ICs that require high thermal conductivity. On the other hand, the method using the mount resin is excellent in workability and reliability as compared with the solder method, and the demand for the mount resin is rapidly increasing.

In recent years, chips have become larger due to higher integration density of ICs and the like. On the other hand, the 42 alloy frame, which has been used in the past, is expensive, so a copper frame is used for cost reduction purposes. Has come to be. Here, when the size of a chip such as an IC becomes larger than about 4 to 5 mm square, the thermal expansion coefficient of the chip and the copper frame can be obtained by using the Au-Si eutectic method in the mounting process due to heating in the assembly process of the IC or the like. Due to the difference from the coefficient of thermal expansion, there is a problem of poor characteristics due to chip cracks and warpage.
That is, the thermal expansion coefficient of silicon or the like which is the material of the chip is 3 × 10 ⁻⁶ / ° C., whereas it is 8 × 10 ⁻⁶ / ° C. in the 42 alloy frame, but 20 × in the copper frame. This is because it becomes as large as 10 ⁻⁶ / ° C. Therefore, a method of using a mounting resin paste in the mounting process is conceivable. However, in the conventional epoxy resin paste, the epoxy resin, which is the main resin component, is a thermosetting resin, and the three-dimensional cross-linking causes the elasticity of the cured product. The rate was high and the strain between the chip and the copper frame could not be absorbed.

  In addition, if an epoxy resin that reduces the crosslinking density after curing, for example, a paste containing a large amount of a monoepoxy compound, the elastic modulus of the cured product can be lowered, but there is a problem that the adhesive strength is lowered. It was. In addition, epoxy resins generally have a high viscosity. When an inorganic filler is added to the epoxy resin, the viscosity is further increased, and there is a problem that workability is deteriorated by stringing at the time of dispensing. When a large amount of solvent is added to improve workability, a new problem that voids are generated arises. A die bonding paste for improving them has been proposed (for example, see Patent Document 1).

  The die bonding paste described in Patent Document 1 has good workability and adhesiveness, but from the viewpoint of warping after curing and improved connection reliability, reduction of the curing temperature and further improvement of various properties are desired. . Further, regarding a low-temperature and fast-curing die bonding paste, a cationic polymerizable curing agent system has been proposed, but it does not sufficiently satisfy the requirements (for example, see Patent Document 2).

JP 2001-106767 A JP 2004-87268 A

  The object of the present invention is not to deteriorate the adhesive strength during heating even in the combination of a large chip such as an IC and a copper frame, and does not cause defective characteristics such as an IC due to chip crack or warpage, that is, excellent in stress relaxation. Die bonding paste that provides a cured product, is low-temperature and fast-curing, has a long pot life (hereinafter sometimes referred to as pot life), and does not generate voids, and a highly reliable semiconductor using the same To provide an apparatus.

[式中、R¹およびR²はそれぞれ独立に−Hまたは−CH₃を示す。Ｘは−CH₂−、−Ｃ（ＣＨ₃）₂−、−ＣH（ＣＨ₃）−、−Ｃ（ＣF₃）₂−、−C O−、−ＳＯ₂−または−O−を示す。ｍおよびnはそれぞれ0から4の整数であり、どちらか一方は必ず1以上である。]
で示されるフェノール化合物、（Ｃ）アルミニウムキレート化合物、および（D）無機フィラーを必須成分として含有し、（Ａ）成分１００質量部に対して（B）成分を１〜２００質量部、（C）成分を０．１〜４０質量部、および、（D）成分を１００〜１００００質量部の割合で含むことを特徴とするダイボンディングペースト、
（２）さらに、(Ｅ)（メタ）アクリロイル基を有するシランカップリング剤を、ペースト硬化物量に基づき０．０１〜２．０質量％の割合で含む上記（１）に記載のダイボンディングペースト、
（３）さらに、(Ｆ)アルコキシ基を有するシラン化合物をペースト硬化物量に基づき０．０１〜３０質量％の割合で含む上記（１）又は（２）に記載のダイボンディングペースト、
（４）無機フィラーが銀粉末である上記（１）〜（３）のいずれかに記載のダイボンディングペースト、
（５）さらに反応性希釈剤を含む上記（１）〜（４）のいずれかに記載のダイボンディングペーストおよび
（６）上記（１）〜（５）のいずれかに記載のダイボンディングペーストを用いてなる半導体装置
を提供するものである。 As a result of intensive studies to develop a die bonding paste having an epoxy resin as a main resin component in order to achieve the above object, the present inventors have used a phenol compound having a special chemical structure as a curing agent, The present inventors have found that a die bonding paste having excellent characteristics and a highly reliable semiconductor device using the same can be obtained, and the present invention has been completed.
That is, the present invention
(1) (A) Epoxy resin, (B) General formula (I)

[Wherein, R ¹ and R ² each independently represent —H or —CH ₃ . X represents —CH ₂ —, —C (CH ₃ ) ₂ —, —CH (CH ₃ ) —, —C (CF ₃ ) ₂ —, —CO—, —SO ₂ — or —O—. m and n are each an integer of 0 to 4, and one of them is always 1 or more. ]
(C) an aluminum chelate compound, and (D) an inorganic filler as essential components, and (A) 100 parts by mass of component (B) 1 to 200 parts by mass of component (C) A die bonding paste comprising 0.1 to 40 parts by mass of the component and 100 to 10,000 parts by mass of the component (D),
(2) The die bonding paste according to (1), further comprising (E) a silane coupling agent having a (meth) acryloyl group in a proportion of 0.01 to 2.0% by mass based on the amount of paste cured product,
(3) The die bonding paste according to (1) or (2), further comprising (F) a silane compound having an alkoxy group in a proportion of 0.01 to 30% by mass based on the amount of the paste cured product,
(4) The die bonding paste according to any one of the above (1) to (3), wherein the inorganic filler is silver powder,
(5) Using the die bonding paste according to any one of (1) to (4) and (6) the die bonding paste according to any one of (1) to (5), further including a reactive diluent. A semiconductor device is provided.

  The die bonding paste of the present invention gives a cured product that is excellent in workability, has low temperature and fast curability, and is excellent in stress relaxation without lowering the adhesive strength during heating. In addition, the pot life is long, the adhesive strength of the cured product is good, and no interfacial peeling occurs between the chip and the frame. By using this die bonding paste, a highly reliable semiconductor device can be obtained.

  In the die bonding paste of the present invention, the epoxy resin as the component (A) has two or more epoxy groups in one molecule and may be either solid or liquid at room temperature (23 ° C.). Can be used. For example, bisphenol A type epoxy resin such as bisphenol A glycidyl ether, bisphenol F type epoxy resin such as bisphenol F glycidyl ether, cresol novolac type epoxy resin, glycidyl ester type epoxy resin, special multifunctional type epoxy resin, alicyclic epoxy Examples thereof include resins. These epoxy resins may be used individually by 1 type, and may be used in combination of 2 or more type.

  The epoxy equivalent of the epoxy resin as the component (A) is preferably 100 to 1000, more preferably 150 to 250, from the viewpoint of the crosslinking density and physical properties of the cured product.

Furthermore, in the present invention, other resins can be used in combination with the epoxy resin of the component (A) as long as the effects are not impaired for the purpose of stress relaxation and adhesion. Examples of other resins include polyester resins, polybutadiene resins, silicone resins, polyurethane resins, xylene resins, and the like.
The compounding quantity of other resin is the range of 0-50 mass parts normally with respect to 100 mass parts of (A) component epoxy resins.

上記一般式（Ｉ）において、R¹およびR²はそれぞれ独立に−Hまたは−CH₃を示す。Ｘは−CH₂−、−Ｃ（ＣＨ₃）₂−、−ＣH（ＣＨ₃）−、−Ｃ（ＣF₃）₂−、−C O−、−ＳＯ₂−、または−O−を示す。ｍおよびnはそれぞれ０から４の整数であり、どちらか一方は必ず1以上である。 In the die bonding paste of the present invention, the (B) component phenolic compound used as a curing agent is represented by the following general formula (I).

In the general formula (I), R ¹ and R ² each independently represent —H or —CH ₃ . X represents —CH ₂ —, —C (CH ₃ ) ₂ —, —CH (CH ₃ ) —, —C (CF ₃ ) ₂ —, —CO—, —SO ₂ —, or —O—. m and n are each an integer of 0 to 4, and one of them is always 1 or more.

Examples of the compound include 2,2′-diallylbisphenol F, 2,2′-diallyl-6,6′-dimethylbisphenol F, 2,2′-diallylbisphenol A, 2,2′-diallyl-6, Examples include 6'-dimethylbisphenol A, 2,2'-diallyl bisphenol AD, 2,2'-diallyl-6,6'-diallyl bisphenol AD, and the like. These may be used singly or in combination of two or more.
(B) The compounding part number of the phenol compound which is a component is 1-200 mass parts with respect to 100 mass parts of epoxy resins of (A) component, Preferably, it is 50-150 mass parts. If it is 1 part by mass or more, the expected effect can be expressed, and if it is 200 parts by mass or less, the residual amount of phenolic hydroxyl groups in the cured product is small, and good adhesive strength, moisture resistance, and the like are obtained. The blending ratio of the component (A) and the component (B) is stoichiometrically 0.5 to 1.5 moles of hydroxyl groups in the component (B) per mole of epoxy groups in the epoxy resin of the component (A). It is preferable to adjust so that it becomes.

  In the die bonding paste of the present invention, the aluminum chelate compound as the component (C) is used as a catalyst for promoting the reaction between the epoxy resin and the phenol compound. Specifically, ethyl acetoacetate aluminum diisopropylate, aluminum tris (ethyl acetoacetate), alkyl acetoacetate aluminum diisopropylate, aluminum monoacetylacetonate bis (ethyl acetoacetate), aluminum tris (acetylacetonate), aluminum Examples thereof include aluminum acetate complexes such as monoisopropoxy monooroxyethyl acetoacetate, N-nitrosophenylhydroxylamine aluminum salt, and the like. These may be used singly or in combination of two or more. (C) The compounding part number of a component is 0.1-40 mass parts with respect to 100 mass parts of epoxy resin of (A) component, Preferably, it is 5-30 mass parts. If it is 1 part by mass or more, a curing accelerating effect is exhibited, and if it is 40 parts by mass or less, it has a sufficient pot life, and good adhesive strength, moisture resistance and the like are obtained.

Examples of the inorganic filler of component (D) in the die bonding paste of the present invention include metal powders such as silver powder and copper powder, alumina powder, and silica filler. Metal powder such as silver powder is used for imparting conductivity to the cured die bonding paste, and the content of ionic impurities such as halogen ions and alkali metal ions is preferably 20 ppm or less. The shape of the metal powder or the like may be any of a scale shape, a flake shape, a spherical shape, and the like. The particle size of the metal powder varies depending on the required viscosity of the paste, but the average particle size is usually 1 to 15 μm, preferably 1 to 10 μm, and the maximum allowable particle size is about 50 μm. If the average particle size is 1 μm or more, the paste has an appropriate viscosity, and if it is 15 μm or less, bleeding of the epoxy resin as the component (A) is suppressed when the paste is applied and during curing. In addition, the metal powder can be used by mixing relatively coarse and fine metal powders, and the above-mentioned various kinds of metal powders may be appropriately mixed and used.
The average particle size of the silica filler is usually 1 to 25 μm, preferably 1 to 10 μm, and the maximum allowable particle size is about 50 μm. If the average particle diameter is 1 μm or more, the paste has an appropriate viscosity, and if it is 25 μm or less, bleeding of the epoxy resin as the component (A) is suppressed when the paste is applied and during curing.
In both the metal powder and the silica filler, when the maximum particle size greatly exceeds 50 μm, when the paste is applied with a dispenser, the needle outlet is blocked, and continuous use for a long time cannot be performed. Moreover, in the case of a silica filler, it is also possible to use a mixture of relatively coarse and fine ones, and various shapes similar to the above metal powder may be appropriately mixed and used. Furthermore, you may mix inorganic fillers other than a metal powder and a silica filler in order to provide the required characteristic.

  (D) The mixing | blending part number of the inorganic filler of a component is 100-10000 mass parts with respect to 100 mass parts of (A) component epoxy resins, Preferably, it is 100-5000 mass parts, More preferably, it is 300-1000 mass parts. It is. If the blending number of the inorganic filler is 100 parts by mass or more, the expansion coefficient of the paste cured product will not be too large, and the connection reliability will be good.

A silane coupling agent having a (meth) acryloyl group can be further added to the die bonding paste of the present invention as the component (E). The silane coupling agent is not particularly limited as long as it contains a (meth) acryloyl group from the viewpoint of obtaining good adhesiveness. For example, 3- (meth) acryloxypropyltrimethoxysilane 3- (meth) acryloxypropylmethyldimethoxysilane, 3- (meth) acryloxypropyldimethylmethoxysilane, 3- (meth) acryloxypropyltriethoxysilane, 3- (meth) acryloxypropylmethyldiethoxysilane, 3- (meth) acryloxypropyldimethylethoxysilane etc. are mentioned. One of these silane coupling agents may be used alone, or two or more thereof may be used in combination.
Further, the content of the silane coupling agent is preferably in the range of 0.01 to 2.0% by mass based on the amount of the cured product of the die bonding paste of the present invention,
0.1-1.5 mass% is more preferable. Sufficient adhesiveness is expressed by setting it to 0.01% by mass or more, and it is sufficient to suppress generation of bubbles caused by outgas, that is, a silane coupling agent, by setting it to 2.0% by mass or less. Can exhibit excellent adhesiveness.

A silane compound having an alkoxy group can be further added to the die bonding paste of the present invention as the component (F). A silane compound having hydrolyzability (which needs to be converted into a silanol compound by hydrolysis) can also be added, and is not particularly limited. Examples thereof include diphenyldimethoxysilane and diphenyldiethoxysilane. These silane compounds may be used individually by 1 type, and may be used in combination of 2 or more type.
The content of these silane compounds is preferably in the range of 0.01 to 30% by mass and more preferably in the range of 0.5 to 5% by mass based on the amount of the cured paste. By setting it as 0.01 mass% or more, the aluminum chelate compound of (C) component can be activated, and by setting it as 30 mass% or less, the pot life of a paste can be ensured.

  In the die bonding paste of the present invention, in addition to the aforementioned components, a curing accelerator such as imidazoles, a solvent for adjusting the viscosity of the die bonding paste, an epoxy group-containing reactive diluent having ring-opening polymerization property, Furthermore, adhesive strength improvers such as coupling agents and acid anhydrides, fine silica powder, antifoaming agents, and other various additives can be blended within a range that does not hinder the function of the die bonding paste.

  Examples of the solvent include cellosolve acetate, ethyl cellosolve, butyl cellosolve, butyl cellosolve acetate, butyl carbitol acetate, propylene glycol phenyl ether, diethylene glycol dimethyl ether, and diacetone alcohol. These may be used singly or in combination of two or more.

  Examples of the reactive diluent include n-butyl glycidyl ether, t-butylphenyl glycidyl ether, allyl glycidyl ether, 2-ethylhexyl glycidyl ether, styrene oxide, phenyl glycidyl ether, and cresyl glycidyl ether. These may be used singly or in combination of two or more.

  The die bonding paste of the present invention comprises the above-described epoxy resin of component (A), the phenol compound represented by general formula (I) of component (B), the aluminum chelate compound of component (C), and the component (D). Disperse after adding inorganic filler and silane coupling agent of component (E), silane compound of component (F), curing accelerator, solvent, reactive diluent, etc., which are used as necessary, and mixing well It can be easily prepared by kneading with a kneader, a three-roll mill or the like and then defoaming.

  The die bonding paste of the present invention thus obtained is excellent in workability because it has little stringiness and spreadability, and it does not reduce the hot bond strength even in a combination of a large chip such as an IC and a copper frame. , IC defects due to chip cracks and warpage do not occur, that is, it gives a cured product with excellent stress relaxation properties, low temperature and fast curing, long usable life, and voids are generated in the cured product There can be no die bonding paste.

  For example, the die bonding paste of the present invention can be filled in a syringe and applied onto a substrate using a dispenser, and then a semiconductor element can be mounted and the semiconductor element can be bonded onto the substrate by curing the paste. Furthermore, the resin-sealed semiconductor device of the present invention can be manufactured by performing wire bonding and sealing with a resin that is a sealing agent. If the die bonding paste of the present invention is used, curing at a low temperature of 100 ° C. or lower, which has not been achieved conventionally, can be performed. Curing is preferably performed by heating at about 100 ° C. for 1 to 2 hours. However, even if curing is performed at a temperature and time higher than that, characteristics such as adhesion performance can be sufficiently achieved. Curing at low temperature is effective from the viewpoint of reducing residual stress in the cured product and reducing warping of the chip to achieve excellent hot adhesive strength. Practically, the curing temperature and curing time should be determined in consideration of productivity and hot adhesive strength.

EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited at all by these examples.
In addition, the component used in each example is as follows.
(1) Epoxy resin A [Allyl-modified bisphenol A glycidyl ether: RE-810NM, epoxy equivalent 220 manufactured by Nippon Kayaku Co., Ltd.]
(2) Epoxy resin B [bisphenol F glycidyl ether: “Japan Epoxy Resin Co., Ltd.” YL983U, epoxy equivalent 170]
(3) Phenol compound A [2,2'-diallylbisphenol A: DABPA manufactured by "AP Corporation"]
(4) Phenol Compound B [Bisphenol A: “Wako Pure Chemical Industries, Ltd.”]
(5) Aluminum chelate compound [Ethyl acetoacetate aluminum diisopropylate: Kawaken Fine Chemical Co., Ltd. aluminum chelate ALCH or N-nitrosophenylhydroxylamine aluminum salt: Wako Pure Chemical Industries, Ltd. Q- 1301]
(6) Silver powder (scale-like, tap density 4.2 g / cm ³ , specific surface area 0.6 m ² / g)
(7) Reactive diluent [t-butylphenylglycidyl ether: TGE-H manufactured by Nippon Kayaku Co., Ltd.]
(8) Silane compound [Dimethoxydiphenylsilane, LS-5300 manufactured by Shin-Etsu Chemical Co., Ltd.]
(9) Coupling agent (3-glycidoxypropyltrimethoxysilane)
(10) Hardener [Dicyandiamide: “Nippon Carbide Co., Ltd.”]
(11) Curing accelerator [Imidazole: 2E4MZ-CN manufactured by "Shikoku Chemicals Co., Ltd."]
(12) Silica powder [spherical silica with an average particle size of 2 μm: “SO-E5” manufactured by Admatechs Co., Ltd.]

Examples 1-7 and Comparative Examples 1-5
Thoroughly mix the types and amounts of the components shown in Table 1 and Table 2, and then knead at 25 ° C using three rolls to prepare a die bonding paste. The properties (viscosity and workability) are as follows: It calculated | required by the method shown in. The results are shown in Tables 1 and 2.
Next, the die bonding paste obtained above was used to bond and cure the semiconductor chip and the substrate, and cured product characteristics (chip bonding strength, thermal conductivity, water absorption rate) were determined by the following methods. The results are shown in Tables 1 and 2.

[Characteristics of die bonding paste]
(1) Viscosity Using an E-type viscometer (3 ° cone, 0.5 rpm and 5 rpm), the viscosity at a temperature of 25 ° C. was measured. In Tables 1 and 2, only the viscosity at 0.5 rpm was described (unit: Pa · s).
(2) Thixotropic property The ratio of the viscosity values at 0.5 rpm and 5 rpm was used as an index of thixotropic property.
(3) Workability (a) Threading property Dispensing threading property was evaluated according to the following criteria.
○: No threading △: Slightly stringing ×: Many threadings occurred (b) Spreadability 0.1mm ³ of paste is applied onto a copper frame whose surface is silver-plated and immediately prepared (18mm square glass) The diameter of the spread area of the paste when a load of 196 mN was applied for 10 seconds was measured and evaluated according to the following criteria. The measurement was performed in a room at 25 ° C.
○: 5 mm or more △: 3-5 mm
X: Less than 3 mm (4) Pot life The viscosity after 24 hours at a temperature of 25 ° C. was measured, and the rate of increase relative to the viscosity immediately after blending was used as an index of pot life.

[Characteristics of cured die bonding paste]
(1) Void Voids were observed by a soft X-ray transmission method for the sample before measuring the adhesive strength.
(2) Chip Adhesive Strength Adhesive strength between the silicon chip (4 mm opening) and the substrate (Cu / Ag plating lead frame) was measured under the conditions of temperature: 260 ° C. and measurement method: die shear strength (unit: N).
In the table showing the adhesive strength, Si vs Cu / Ag is the adhesive strength between the silicon chip and the Cu / Ag plated lead frame, Si vs PPF is the adhesive strength between the silicon chip and the PPF frame, and Au vs PPF is the silicon chip. The adhesion strength between the silicon back Au plated chip and the PPF frame is shown.
(3) Shear fracture mode The state of the paste cured material broken in the chip bond strength evaluation test of (2) was visually confirmed.
○: Cohesive failure of the cured paste layer ×: Interfacial peeling (4) Elastic modulus The elastic modulus of the tensile mode was measured at 25 ° C. and 260 ° C. with a thermal analyzer DMA (TE Instruments Japan, DMAQ800). . The heating rate is 10 ° C./min (unit: Gpa).
(5) Water Absorption Rate The mass change rate after exposure for 24 hours in an environment of 85 ° C. and RH 85% was measured and used as the water absorption rate (unit: mass%).
(6) Warp of chip After applying a paste on a copper frame and mounting an 8 × 8 mm silicon chip on the coated surface, the paste was adhesively cured and the amount of warpage was measured (unit: μm). Curing was performed at 100 ° C. for 2.0 hours for the samples used in Examples 1-7 and Comparative Examples 1-3, and at 170 ° C. for 2.0 hours for the samples used in Comparative Examples 4 and 5.

As can be seen from Tables 1 and 2, the die-bonding paste of the example using the phenol compound represented by the general formula (I) is better in stringiness and spread than the paste of the comparative example not using it. There is little nature. Therefore, workability is good, and low temperature and fast curability are obtained. In the comparative example, although the curing accelerator is used, the properties of the cured product are poor (particularly, in Comparative Example 2, the properties of the cured product cannot be measured due to poor curing of the die bonding paste).
In particular, even when cured at a temperature of 100 ° C. or lower, the characteristics are sufficiently exhibited. In addition, it has a long pot life and exhibits good chip adhesion strength even in various combinations of chips and frames, and a good shear failure mode without interfacial delamination between the cured paste and the chip or frame (substrate) showed that. Further, the cured product of the die bonding paste of the present invention has a low water absorption rate, a small chip warp, and excellent properties.

  The die bonding paste of the present invention has a good workability and gives a cured product excellent in stress relaxation property and the like, and the reliability of the semiconductor device can be improved by using this die bonding paste.

Claims (6)

(A) Epoxy resin, (B) General formula (I)

[Wherein, R ¹ and R ² each independently represent —H or —CH ₃ . X represents —CH ₂ —, —C (CH ₃ ) ₂ —, —CH (CH ₃ ) —, —C (CF ₃ ) ₂ —, —CO—, —SO ₂ — or —O—. m and n are each an integer of 0 to 4, and one of them is always 1 or more. ]
(C) an aluminum chelate compound, and (D) an inorganic filler as essential components, and (A) 100 parts by mass of component (B) 1 to 200 parts by mass of component (C) A die bonding paste comprising 0.1 to 40 parts by mass of the component and 100 to 10,000 parts by mass of the component (D).   Furthermore, the die-bonding paste of Claim 1 which contains the silane coupling agent which has (E) (meth) acryloyl group in the ratio of 0.01-2.0 mass% based on the amount of paste hardened | cured materials.   Furthermore, the die-bonding paste of Claim 1 or 2 which contains the silane compound which has (F) alkoxy group in the ratio of 0.01-30 mass% based on the amount of paste hardened | cured materials.   The die bonding paste according to any one of claims 1 to 3, wherein the inorganic filler is silver powder.   Furthermore, the die-bonding paste in any one of Claims 1-4 containing a reactive diluent.   A semiconductor device using the die bonding paste according to claim 1.