JP2001354938A - Adhesive composition for semiconductor device, and adhesive sheet prepared by using the composition, semiconductor-connecting substrate, and semiconductor device prepared by using the composition - Google Patents
Adhesive composition for semiconductor device, and adhesive sheet prepared by using the composition, semiconductor-connecting substrate, and semiconductor device prepared by using the compositionInfo
- Publication number
- JP2001354938A JP2001354938A JP2000175114A JP2000175114A JP2001354938A JP 2001354938 A JP2001354938 A JP 2001354938A JP 2000175114 A JP2000175114 A JP 2000175114A JP 2000175114 A JP2000175114 A JP 2000175114A JP 2001354938 A JP2001354938 A JP 2001354938A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- semiconductor device
- semiconductor
- adhesive composition
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体集積回路を実
装する際に用いられる、テープオートメーテッドボンデ
ィング(TAB)方式のパターン加工テープ、ボールグ
リッドアレイ(BGA)パッケージ用インターポーザー
等の半導体接続用基板、リードフレーム固定テープ、L
OC固定テープ、ダイボンディング材、ヒートスプレッ
ダ、補強板、シールド材の接着剤、ソルダーレジスト、
等を作成するために適した接着剤組成物およびそれを用
いた接着剤シート、半導体接続用基板ならびに半導体装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for semiconductor connection, such as a tape automated bonding (TAB) type pattern processing tape, a ball grid array (BGA) package interposer, and the like, which are used when mounting a semiconductor integrated circuit. , Lead frame fixing tape, L
OC fixing tape, die bonding material, heat spreader, reinforcing plate, shield material adhesive, solder resist,
TECHNICAL FIELD The present invention relates to an adhesive composition suitable for producing an article and the like, an adhesive sheet using the same, a substrate for semiconductor connection, and a semiconductor device.
【0002】[0002]
【従来の技術】半導体集積回路(IC)の実装には、金
属製のリードフレームを用いた方式がもっとも多く用い
られているが、近年ではガラスエポキシやポリイミド等
の有機絶縁性フィルム上にIC接続用の導体パターンを
形成した、インターポーザーと称する半導体接続用基板
を介した方式が増加している。2. Description of the Related Art For mounting a semiconductor integrated circuit (IC), a method using a metal lead frame is most often used. In recent years, however, IC connection on an organic insulating film such as glass epoxy or polyimide is performed. The method using a semiconductor connection substrate called an interposer on which a conductor pattern is formed has been increasing.
【0003】パッケージ形態としては、パッケージの裏
面に接続端子を配列するBGA(ボールグリッドアレ
イ)、CSP(チップスケールパッケージ)が用いられ
るようになってきた。[0003] As a package form, a BGA (ball grid array) and a CSP (chip scale package) in which connection terminals are arranged on the back surface of the package have come to be used.
【0004】半導体接続用基板の接続方式としては、テ
ープオートメーテッドボンディング(TAB)方式、ワ
イヤーボンデイング方式、フリップチップ方式、等が挙
げられる。[0004] Examples of the connection method of the semiconductor connection substrate include a tape automated bonding (TAB) method, a wire bonding method, and a flip chip method.
【0005】したがって、半導体接続用基板には TA
B用接着剤付きテープを使用することができる。インナ
ーリードを有する接続方式に有利であることは当然であ
るが、BGA方式では半田ボール用の孔やIC用のデバ
イスホールを機械的に打ち抜いた後に銅箔をラミネート
するプロセスに特に適している。一方、インナーリード
を有しないワイヤーボンディングおよびフリップチップ
接続の場合は、TAB用接着剤付きテープだけでなく、
すでに銅箔を積層し接着剤を加熱硬化させた銅張り積層
板を用いることも可能である。[0005] Therefore, TA
A tape with an adhesive for B can be used. Naturally, the BGA method is particularly suitable for a process of laminating a copper foil after mechanically punching a hole for a solder ball or a device hole for an IC, although it is naturally advantageous to a connection method having inner leads. On the other hand, in the case of wire bonding and flip chip connection without an inner lead, not only a tape with an adhesive for TAB,
It is also possible to use a copper-clad laminate in which a copper foil has already been laminated and the adhesive has been cured by heating.
【0006】さらに、半導体接続基板には剛性と平面性
の付与のための補強板(スティフナー)あるいは放熱の
ための放熱板(ヒートスプレッダー)等の部品を積層す
ることも行われるが、その際にも接着剤が使用される。Further, components such as a reinforcing plate (stiffener) for imparting rigidity and flatness or a heat radiating plate (heat spreader) for radiating heat are also laminated on the semiconductor connecting substrate. Even glue is used.
【0007】電子機器の小型化、高密度化が進行するに
伴い、これらの半導体接続基板に使用される接着剤はい
ずれも最終的にパッケージ内に残留することが多いた
め、絶縁性、耐熱性、接着性等の諸特性を満たすことが
要求される。[0007] With the progress of miniaturization and high-density of electronic equipment, adhesives used for these semiconductor connection substrates often ultimately remain in the package, so that insulation and heat resistance are increased. It is required to satisfy various characteristics such as adhesiveness and the like.
【0008】半導体接続用基板のパターンピッチ(導体
幅および導体間幅)は非常に狭くなってきており、高い
絶縁信頼性と狭い導体幅における銅箔接着力(以下、接
着力と称する)を有する接着剤の必要性が高まってい
る。最近は特に、絶縁信頼性の加速試験として、130
℃、85%RHの高温高湿、あるいは125℃〜150
℃の高温で連続した電圧印加状態における絶縁抵抗の低
下速度が重要視されるようになった。また、半導体装置
は温度、湿度等の環境条件変化により発生する応力によ
り信頼性が低下し、破壊されることもある。従って、温
度、湿度による応力、特に熱応力の緩和機能は半導体用
接着剤にとって極めて重要である。The pattern pitch (conductor width and width between conductors) of a substrate for semiconductor connection has become very narrow, and has high insulation reliability and copper foil adhesive strength (hereinafter referred to as adhesive strength) in a narrow conductor width. The need for adhesives is growing. Recently, especially as an accelerated test for insulation reliability, 130
℃, 85% RH high temperature and high humidity, or 125 ℃ ~ 150
Attention has been paid to the rate of decrease in insulation resistance in a state where a voltage is continuously applied at a high temperature of ° C. Further, the reliability of the semiconductor device may be reduced due to stress generated by changes in environmental conditions such as temperature and humidity, and the semiconductor device may be destroyed. Therefore, the function of relieving stress due to temperature and humidity, particularly thermal stress, is extremely important for adhesives for semiconductors.
【0009】このような接着剤の例として、従来のTA
B用テープの接着剤層は、エポキシ樹脂および/または
フェノール樹脂とポリアミド樹脂の混合組成物を主とし
たものであった(特開平2−143447号公報、特開
平3−217035号公報等)。一方、上記のように接
着力および耐熱特性の改善を目的として、シロキサン構
造を有するエポキシを添加する方法も開示されている
(特開平5−259228号公報)。As an example of such an adhesive, a conventional TA
The adhesive layer of the tape for B was mainly composed of a mixed composition of an epoxy resin and / or a phenol resin and a polyamide resin (JP-A-2-14347, JP-A-3-217035, etc.). On the other hand, there is also disclosed a method of adding an epoxy having a siloxane structure for the purpose of improving the adhesive strength and the heat resistance as described above (JP-A-5-259228).
【0010】[0010]
【発明が解決しようとする課題】しかし、上述の絶縁信
頼性および接着力において、従来の半導体用接着剤組成
物は必ずしも十分とはいえない。たとえば、高温高湿で
の連続した電圧印加状態における絶縁低下が早いため、
絶縁信頼性が不足してしまう。特に、高速動作する集積
回路等で発熱量が大きい場合、信頼性が低下し、半導体
装置が破壊するような事態を招く。However, conventional semiconductor adhesive compositions are not always satisfactory in the above-described insulation reliability and adhesive strength. For example, because insulation decreases rapidly in the state of continuous voltage application at high temperature and high humidity,
Insulation reliability will be insufficient. In particular, when an integrated circuit or the like that operates at a high speed generates a large amount of heat, the reliability is reduced and the semiconductor device is broken.
【0011】絶縁信頼性を向上させるには熱硬化樹脂に
よる架橋の強化とそれに伴うガラス転移温度(Tg)の
上昇による分子運動の抑制が有効であり、従来の接着剤
もこのような設計が通常であった。しかし、このような
架橋密度の高い接着剤では、可撓性が低下し、接着性の
低下、反りの発生が避けられなかった。また、低温での
可撓性が低く、熱応力の緩和効果が小さいため半導体の
信頼性を低下させていた。つまり、優れた絶縁性と優れ
た接着性、反りの防止および熱応力緩和効果(温度サイ
クル耐久性)は同時に達成不可能であった。In order to improve the insulation reliability, it is effective to enhance the crosslinking by the thermosetting resin and to suppress the molecular motion by increasing the glass transition temperature (Tg), and such a design of the conventional adhesive is usually used. Met. However, with such an adhesive having a high cross-linking density, the flexibility is reduced, and the reduction in adhesiveness and the occurrence of warpage cannot be avoided. In addition, the flexibility at low temperatures is low, and the effect of relaxing thermal stress is small, thereby lowering the reliability of the semiconductor. That is, it was impossible to simultaneously achieve excellent insulation and excellent adhesion, prevention of warpage, and thermal stress relaxation effect (temperature cycle durability).
【0012】本発明はこのような問題点を解決し、優れ
た絶縁性を保持しつつ、優れた接着性、反りの防止およ
び温度サイクル耐久性を同時に達成し得る半導体装置用
接着剤組成物およびそれを用いた接着剤シート、半導体
接続用基板ならびに半導体装置を提供することを目的と
する。The present invention solves the above problems and provides an adhesive composition for a semiconductor device capable of simultaneously achieving excellent adhesiveness, prevention of warpage, and temperature cycle durability while maintaining excellent insulating properties. An object of the present invention is to provide an adhesive sheet, a semiconductor connection substrate, and a semiconductor device using the same.
【0013】[0013]
【課題を解決するための手段】すなわち、本発明は、主
鎖にエステル基を有するポリエステルアミドを必須成分
として含有することを特徴とする半導体装置用接着剤組
成物およびそれを用いた接着剤シート、半導体接続用基
板ならびに半導体装置である。That is, the present invention provides an adhesive composition for a semiconductor device comprising a polyesteramide having an ester group in a main chain as an essential component, and an adhesive sheet using the same. , A semiconductor connection substrate and a semiconductor device.
【0014】[0014]
【発明の実施の形態】本発明者らは、上記の目的を達成
するために半導体用接着剤組成物の接着剤成分の化学構
造と金属に対する接着性および絶縁性との関係を鋭意検
討した結果、絶縁信頼性を保持しつつ、接着力に優れか
つ反りの改善された半導体装置用接着剤組成物が得られ
ることを見い出し、本発明に至ったものである。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have conducted intensive studies on the relationship between the chemical structure of the adhesive component of the adhesive composition for semiconductors and the adhesiveness to metal and insulation to achieve the above object. The present inventors have found that an adhesive composition for a semiconductor device having excellent adhesion and improved warpage can be obtained while maintaining insulation reliability, and the present invention has been accomplished.
【0015】本発明の半導体用接着剤組成物は、必須成
分としてアミド結合とエステル結合を含む共重合体を含
むものであればよく、その構造は特に制限されない。エ
ステル結合を有することで、接着性、可撓性、絶縁性の
良好なポリアミドに加え吸水性が小さく、耐溶剤性に優
れるポリエステルの長所を有効に利用できるので好まし
い。The adhesive composition for a semiconductor of the present invention may be any one containing a copolymer containing an amide bond and an ester bond as essential components, and its structure is not particularly limited. Having an ester bond is preferable because the advantages of polyester having low water absorption and excellent solvent resistance can be effectively used in addition to polyamide having good adhesiveness, flexibility, and insulating properties.
【0016】モノマーの構造は特に制限されず、ジカル
ボン酸化合物、ジアミン化合物、ヒドロキシアミン化合
物、ヒドロキシカルボン酸化合物、ジヒドロキシ化合
物、ラクタム化合物、ラクトン化合物のいずれの組み合
わせによるポリエステルアミドでもよい。骨格構造は、
可撓性、低吸水性の点から、好ましくは炭素数2〜6
0、より好ましくは6〜36の脂肪族炭化水素基または
エーテル鎖を含有するモノマー、もしくは6〜36の脂
肪族炭化水素基とエーテル鎖の両方を含有するモノマー
を用いるとよい。特に、接着剤層に可撓性を持たせ、か
つ低吸水率のため絶縁性にすぐれる、炭素数が36であ
るジカルボン酸(いわゆるダイマー酸)を必須成分とし
て含むポリエステルアミド樹脂が好適である。炭素数6
0をこえるとポリオレフィンの性質に近づくので接着性
が低下し、好ましくない。エーテル鎖は低温での可撓性
に優れるので、半導体装置の温度サイクル耐久性を改善
するのに有効である。エーテル鎖としては炭素数2〜1
2のものが好ましい。炭素数12を越えるとエーテル構
造の特性が発揮されず、可撓性を与える効果が低いの
で、最終的に温度サイクル耐久性が劣る。The structure of the monomer is not particularly limited, and it may be a polyesteramide formed by any combination of a dicarboxylic acid compound, a diamine compound, a hydroxyamine compound, a hydroxycarboxylic acid compound, a dihydroxy compound, a lactam compound, and a lactone compound. The skeletal structure is
From the viewpoint of flexibility and low water absorption, preferably it has 2 to 6 carbon atoms.
It is preferable to use 0, more preferably a monomer containing 6 to 36 aliphatic hydrocarbon groups or ether chains, or a monomer containing 6 to 36 aliphatic hydrocarbon groups or ether chains. In particular, a polyesteramide resin containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) as an essential component, which has flexibility in the adhesive layer and has excellent insulating properties due to low water absorption, is suitable. . Carbon number 6
If it exceeds 0, the properties of the polyolefin are approached, so that the adhesiveness decreases, which is not preferable. Since the ether chain has excellent flexibility at low temperatures, it is effective for improving the temperature cycle durability of the semiconductor device. The ether chain has 2 to 1 carbon atoms
Two are preferred. If the number of carbon atoms exceeds 12, the properties of the ether structure are not exhibited and the effect of imparting flexibility is low, so that the temperature cycle durability is ultimately poor.
【0017】一方、軟化点の制御のため、環状脂肪族骨
格も好ましく用いられる。このようなものとして、イソ
ホロンジアミン、シクロヘキサンジアミン、ピペラジ
ン、シクロヘキサンジカルボン酸、等が例示される。On the other hand, for controlling the softening point, a cyclic aliphatic skeleton is also preferably used. Examples of such a substance include isophoronediamine, cyclohexanediamine, piperazine, and cyclohexanedicarboxylic acid.
【0018】また、耐熱性を付与するために芳香族骨格
を持つモノマーを用いることも有効である。たとえば、
炭素数1〜12の炭化水素基またはハロゲン化炭化水素
基を有するベンゼン環、ナフタレン環、アントラセン
環、およびこれらが共有結合(ビフェニル等)、炭素数
1〜12の炭化水素基およびハロゲン化炭化水素基、ス
ルフィド基、スルホン基、リン酸基、イミノ基、等で複
数結合した骨格構造が例示される。It is also effective to use a monomer having an aromatic skeleton for imparting heat resistance. For example,
A benzene ring, a naphthalene ring, an anthracene ring having a hydrocarbon group having 1 to 12 carbon atoms or a halogenated hydrocarbon group, and a covalent bond thereof (such as biphenyl), a hydrocarbon group having 1 to 12 carbon atoms, and a halogenated hydrocarbon; A skeleton structure in which a plurality of groups are bonded by a group, a sulfide group, a sulfone group, a phosphate group, an imino group, or the like is exemplified.
【0019】ポリエステルアミドの結合基当量(結合基
(アミド基とエステル基の総和)1個当たりの分子量)
は、100〜800好ましくは200〜700、さらに
好ましくは250〜600である。100未満では結合
基数が多く、吸水率の増加あるいは溶解性の低下が生
じ、加工しにくくなるので好ましくない。一方、700
を越えると銅箔、金属板、絶縁性フィルム等との接着力
が低下するので好ましくない。Bonding group equivalent of polyesteramide (molecular weight per binding group (sum of amide group and ester group))
Is 100 to 800, preferably 200 to 700, and more preferably 250 to 600. If it is less than 100, the number of bonding groups is large, so that the water absorption increases or the solubility decreases, which makes processing difficult, which is not preferable. On the other hand, 700
Exceeding the range is not preferred because the adhesive strength to a copper foil, a metal plate, an insulating film or the like is reduced.
【0020】ポリエステルアミド中のエステル基は全結
合基中に1つ以上あればよい。たとえば、後述のように
ブロック、グラフト共重合体で、異種連鎖の結合部がエ
ステル結合である場合も本発明のポリエステルアミドに
含まれる。エーテル鎖を有する場合、その含有量は1〜
50重量%、好ましくは2〜30重量%、さらに好まし
くは5〜20重量%であるとよい。1重量%未満では可
撓性が発揮されず、50重量%を越えるとでは耐熱性に
劣るのでいずれも好ましくない。The number of ester groups in the polyesteramide may be one or more in all the bonding groups. For example, the polyesteramide of the present invention also includes a case where the bonding portion of the hetero-chain is an ester bond in a block or graft copolymer as described later. When it has an ether chain, its content is from 1 to
The content is 50% by weight, preferably 2 to 30% by weight, and more preferably 5 to 20% by weight. If it is less than 1% by weight, flexibility is not exhibited, and if it exceeds 50% by weight, heat resistance is inferior.
【0021】本発明中のポリエステルアミドは、モノマ
ー単位がアミド結合のみで結合した部分であるアミド連
鎖(A)、同じくエステル結合のみで結合したエステル
連鎖(B)および同じくエーテル結合のみで結合したエ
ーテル連鎖(C)をいずれか少なくとも2種含有する共
重合体であってもよい。さらに共重合体はブロック共重
合体、グラフト共重合体のどちらでも構わず、ポリアミ
ド、ポリエステルおよびポリエーテルそれぞれの特性が
さらに発揮されやすく、かつ適用できるモノマーの範囲
も広がるため、好ましく用いられる。The polyester amide in the present invention includes an amide chain (A) in which monomer units are bonded only by an amide bond, an ester chain (B) also bonded only by an ester bond, and an ether chain bonded only by an ether bond. A copolymer containing at least two kinds of the chains (C) may be used. Further, the copolymer may be either a block copolymer or a graft copolymer, and is preferably used because the properties of polyamide, polyester and polyether are more easily exhibited and the range of applicable monomers is widened.
【0022】アミド連鎖(A)、エステル連鎖(B)お
よびエーテル連鎖(C)には上述のモノマーがいずれも
使用できる。従って、AB型、ABA型、ABC型、等
のいずれの組み合わせであってもよい。たとえば、アミ
ド連鎖(A)が末端あるいは主鎖中にカルボン酸を有
し、末端に水酸基を有するエステル鎖(B)またはエー
テル鎖(C)が該カルボン酸とエステル結合により結合
されたブロックまたはグラフト共重合体は、ABまたは
ACブロック(またはグラフト)共重合体としてこの範
囲に含まれる。Any of the above monomers can be used for the amide chain (A), ester chain (B) and ether chain (C). Therefore, any combination of AB type, ABA type, ABC type, etc. may be used. For example, a block or graft in which an amide chain (A) has a carboxylic acid at the terminal or main chain and an ester chain (B) or an ether chain (C) having a hydroxyl group at the terminal is bonded to the carboxylic acid by an ester bond. Copolymers are included in this range as AB or AC block (or graft) copolymers.
【0023】本発明のポリエステルアミドは通常可撓性
を有する熱可塑樹脂として使用するが、エポキシ基、メ
チロール基、チオール基等の自己架橋性を有する官能基
を導入することで、架橋性樹脂とすることも可能であ
る。また、後述のフェノール樹脂(D)、エポキシ樹脂
(E)等の熱硬化性樹脂との反応が可能な官能基を有し
ていてもよい。具体的には、アミノ基、カルボキシル
基、エポキシ基、水酸基、メチロール基、イソシアネー
ト基、ビニル基、シラノール基等である。これらの官能
基により熱硬化性樹脂との結合が強固になり、耐熱性が
向上するので好ましい本発明の接着剤組成物中のポリエ
ステルアミド添加量は、好ましくは2〜80重量%、よ
り好ましくは5〜60重量%、さらに好ましくは10〜
50重量%である。2重量%未満では可撓性が得られ
ず、80重量%を越えると耐熱性に欠けるのでいずれも
好ましくない。The polyesteramide of the present invention is usually used as a thermoplastic resin having flexibility. By introducing a self-crosslinkable functional group such as an epoxy group, a methylol group or a thiol group, the polyesteramide can be used as a crosslinkable resin. It is also possible. Further, it may have a functional group capable of reacting with a thermosetting resin such as a phenol resin (D) and an epoxy resin (E) described below. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. Since the bond with the thermosetting resin is strengthened by these functional groups and the heat resistance is improved, the amount of the polyesteramide added to the adhesive composition of the present invention is preferably 2 to 80% by weight, more preferably 5 to 60% by weight, more preferably 10 to 60% by weight
50% by weight. If it is less than 2% by weight, flexibility cannot be obtained, and if it exceeds 80% by weight, heat resistance is lacking.
【0024】本発明の接着剤層にポリエステルアミド以
外の熱可塑性樹脂を含有させることは何ら制限されな
い。熱可塑性樹脂は接着力、可撓性、熱応力の緩和、低
吸水性による絶縁性の向上等の機能を有する。ポリエス
テルアミド以外の熱可塑性樹脂の添加量は1〜30重量
%、好ましくは5〜20重量%である。The inclusion of a thermoplastic resin other than polyesteramide in the adhesive layer of the present invention is not limited at all. The thermoplastic resin has functions such as adhesive strength, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. The addition amount of the thermoplastic resin other than the polyesteramide is 1 to 30% by weight, preferably 5 to 20% by weight.
【0025】本発明に用いられる熱可塑性樹脂として
は、アクリロニトリル−ブタジエン共重合体(NB
R)、アクリロニトリル−ブタジエンゴム−スチレン樹
脂(ABS)、スチレン−ブタジエン−エチレン樹脂
(SEBS)、アクリル、ポリビニルブチラール、ポリ
アミド、ポリエステル、ポリイミド、ポリアミドイミ
ド、ポリウレタン等公知のものが例示される。As the thermoplastic resin used in the present invention, acrylonitrile-butadiene copolymer (NB)
R), acrylonitrile-butadiene rubber-styrene resin (ABS), styrene-butadiene-ethylene resin (SEBS), acryl, polyvinyl butyral, polyamide, polyester, polyimide, polyamideimide, polyurethane and the like.
【0026】本発明において、接着剤組成物中にフェノ
ール樹脂(D)を添加することにより、一層絶縁信頼
性、耐薬品性、接着剤組成物の強度を向上させることが
できる。In the present invention, by adding a phenol resin (D) to the adhesive composition, insulation reliability, chemical resistance, and strength of the adhesive composition can be further improved.
【0027】フェノール樹脂(D)としては、ノボラッ
ク型フェノール樹脂、レゾール型フェノール樹脂、等の
公知のフェノール樹脂がいずれも使用できる。たとえ
ば、フェノール、クレゾール、p−t−ブチルフェノー
ル、ノニルフェノール、p−フェニルフェノール等のア
ルキル置換フェノール、テルペン、ジシクロペンタジエ
ン等の環状アルキル変性フェノール、ニトロ基、ハロゲ
ン基、シアノ基、アミノ基等のヘテロ原子を含む官能基
を有するもの、ナフタレン、アントラセン等の骨格を有
するもの、ビスフェノールF、ビスフェノールA、ビス
フェノールS、レゾルシノール、ピロガロール等の多官
能性フェノールからなる樹脂が挙げられる。中でも、レ
ゾール型フェノール樹脂は絶縁抵抗低下時間が向上させ
る効果があるのでより好適である。As the phenol resin (D), any known phenol resin such as a novolak phenol resin and a resol phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, and p-phenylphenol; cyclic alkyl-modified phenols such as terpene and dicyclopentadiene; and heterocycles such as nitro, halogen, cyano, and amino groups. Examples thereof include those having a functional group containing an atom, those having a skeleton such as naphthalene and anthracene, and resins made of polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol. Among them, a resol type phenol resin is more preferable because it has an effect of improving the insulation resistance reduction time.
【0028】フェノール樹脂の添加量は接着剤組成物の
好ましくは5〜80重量%、より好ましくは10〜70
重量%、さらに好ましくは35重量%を越え、60重量
%未満である。5重量%以下では絶縁性が低下するので
好ましくなく、80重量%以上では接着力が低下するの
で、いずれも好ましくない。特に、接着剤組成物がレゾ
ール型フェノール樹脂を、35重量%を越え60重量%
以下含有することが好ましい。The amount of the phenol resin added is preferably 5 to 80% by weight of the adhesive composition, more preferably 10 to 70% by weight.
%, More preferably more than 35% and less than 60% by weight. If it is less than 5% by weight, the insulating property is lowered, so that it is not preferable. If it is more than 80% by weight, the adhesive strength is lowered, and neither is preferable. In particular, the adhesive composition may contain more than 35% by weight of the resole type phenolic resin and more than 60% by weight.
It is preferable to contain the following.
【0029】本発明の接着剤層に公知のエポキシ樹脂
(E)を添加すると、接着力の向上が計れるので好まし
い。エポキシ樹脂は1分子内に2個以上のエポキシ基を
有するものであれば特に制限されないが、ビスフェノー
ルF、ビスフェノールA、ビスフェノールS、ジヒドロ
キシナフタレン、ジシクロペンタジエンジフェノール、
ジシクロペンタジエンジキシレノール等のジグリシジル
エーテル、エポキシ化フェノールノボラック、エポキシ
化クレゾールノボラック、エポキシ化トリスフェニロー
ルメタン、エポキシ化テトラフェニロールエタン、エポ
キシ化メタキシレンジアミン、脂環式エポキシ等が挙げ
られる。It is preferable to add a known epoxy resin (E) to the adhesive layer of the present invention because the adhesive strength can be improved. The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but bisphenol F, bisphenol A, bisphenol S, dihydroxynaphthalene, dicyclopentadiene diphenol,
Examples thereof include diglycidyl ethers such as dicyclopentadiene dixylenol, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, and alicyclic epoxy.
【0030】エポキシ樹脂の添加量は接着剤組成物の好
ましくは2〜50重量%、さらに好ましくは5〜30重
量%である。The amount of the epoxy resin added is preferably 2 to 50% by weight, more preferably 5 to 30% by weight of the adhesive composition.
【0031】本発明の接着剤組成物にエポキシ樹脂およ
びフェノール樹脂の硬化剤および硬化促進剤を添加する
ことは何等制限されない。たとえば、芳香族ポリアミ
ン、三フッ化ホウ素トリエチルアミン錯体等の三フッ化
ホウ素のアミン錯体、2−アルキル−4−メチルイミダ
ゾール、2−フェニル−4−アルキルイミダゾール等の
イミダゾール誘導体、無水フタル酸、無水トリメリット
酸等の有機酸、ジシアンジアミド、トリフェニルフォス
フィン、ジアザビシクロウンデセン等公知のものが使用
できる。添加量は0.05〜10重量%、さらに好まし
くは0.1〜5重量%であると好ましい。The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive composition of the present invention is not limited at all. For example, aromatic polyamines, amine complexes of boron trifluoride such as boron trifluoride triethylamine complex, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, phthalic anhydride, trianhydride Organic acids such as melitic acid, dicyandiamide, triphenylphosphine, diazabicycloundecene and the like can be used. The added amount is preferably 0.05 to 10% by weight, more preferably 0.1 to 5% by weight.
【0032】微粒子状の無機成分としては水酸化アルミ
ニウム、水酸化マグネシウム、カルシウム・アルミネー
ト水和物等の金属水酸化物、シリカ、アルミナ、酸化ジ
ルコニウム、酸化亜鉛、三酸化アンチモン、五酸化アン
チモン、酸化マグネシウム、酸化チタン、酸化鉄、酸化
コバルト、酸化クロム、タルク等の金属酸化物、炭酸カ
ルシウム等の無機塩、アルミニウム、金、銀、ニッケ
ル、鉄、等の金属微粒子、あるいはカーボンブラック、
ガラスが挙げられ、有機成分としてはスチレン、NBR
ゴム、アクリルゴム、ポリアミド、ポリイミド、シリコ
ーン等の架橋ポリマが例示される。これらを単独または
2種以上混合して用いても良い。微粒子状の成分の平均
粒子径は分散安定性を考慮すると、0.2〜5μが好ま
しい。また、配合量は接着剤組成物全体の2〜50重量
部が適当である。Examples of the finely divided inorganic components include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, and calcium aluminate hydrate, silica, alumina, zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, and the like. Metal oxides such as magnesium oxide, titanium oxide, iron oxide, cobalt oxide, chromium oxide, and talc; inorganic salts such as calcium carbonate; aluminum, gold, silver, nickel, iron, and other metal fine particles; or carbon black;
Glass is exemplified, and styrene and NBR are used as organic components.
Examples include crosslinked polymers such as rubber, acrylic rubber, polyamide, polyimide, and silicone. These may be used alone or in combination of two or more. The average particle diameter of the fine particle component is preferably 0.2 to 5 μ in consideration of dispersion stability. Also, the compounding amount is suitably 2 to 50 parts by weight of the whole adhesive composition.
【0033】以上の成分以外に、接着剤の特性を損なわ
ない範囲で酸化防止剤、イオン捕捉剤などの有機、無機
成分を添加することは何ら制限されるものではない。In addition to the above components, addition of organic and inorganic components such as antioxidants and ion scavengers is not limited as long as the properties of the adhesive are not impaired.
【0034】次に本発明の半導体用接着剤組成物を用い
た接着剤シートの製造方法について説明する。Next, a method for producing an adhesive sheet using the semiconductor adhesive composition of the present invention will be described.
【0035】保護フィルムに、上記接着剤組成物を溶剤
に溶解した塗料を塗布、乾燥する。接着剤層の膜厚は5
〜200μとなるように塗布することが好ましい。乾燥
条件は、100〜200℃、1〜5分である。溶剤は特
に限定されないが、トルエン、キシレン、クロルベンゼ
ン等の芳香族系とメタノール、エタノール、プロパノー
ル等のアルコール系の混合が好適である。このようにし
て得られたフィルムはそのまま巻き取るかあるいはさら
に保護フィルムをラミネートする。使用形態に応じ、任
意の幅にスリットする。A coating obtained by dissolving the adhesive composition in a solvent is applied to the protective film and dried. The thickness of the adhesive layer is 5
It is preferable to apply so that the thickness becomes 200 μm. Drying conditions are 100 to 200 ° C. for 1 to 5 minutes. The solvent is not particularly limited, but a mixture of an aromatic compound such as toluene, xylene, and chlorobenzene and an alcohol compound such as methanol, ethanol, and propanol is preferable. The film thus obtained is wound as it is or a protective film is further laminated. Slit to an arbitrary width according to the usage form.
【0036】ここでいう保護フィルム層とは、接着剤シ
ートを銅箔、金属板、絶縁性フィルム等の被着体にラミ
ネートする前に接着剤面から接着剤シートの形態を損な
うことなく剥離できれば特に限定されないが、たとえば
シリコーンあるいはフッ素化合物のコーティング処理を
施したポリエステルフィルム、ポリオレフィンフィル
ム、およびこれらをラミネートした紙が挙げられる。The term "protective film layer" as used herein means that the adhesive sheet can be peeled from the adhesive surface without damaging the form of the adhesive sheet before laminating the adhesive sheet to an adherend such as a copper foil, a metal plate, or an insulating film. Although not particularly limited, examples thereof include a polyester film, a polyolefin film coated with a silicone or a fluorine compound, and paper laminated with these.
【0037】次に本発明の接着剤シートを用いた半導体
装置の製造方法を例示して説明する。 (1)接着剤シートをTAB用接着剤付きテープおよび
半導体接続用基板と半導体との接着に適用した例 ポリイミド等の絶縁性フィルム(幅35〜70mm)
に、該絶縁性フィルムより狭い幅(29.7〜60.6
mm)の本発明の接着剤シートを100〜160℃、1
0N/cm、5m/minの条件で熱ロールラミネート
し、TAB用接着剤付きテープを作成する。次いで、該
TAB用接着剤付きテープサンプルに18μの電解銅箔
を、110〜180℃、30N/cm、1m/minの
条件でラミネートする。続いてエアオーブン中で、80
℃、3時間、100℃、5時間、150℃、5時間の順
次加熱硬化処理を行ない、銅箔付きの半導体用接着剤付
きテープを作成する。Next, a method for manufacturing a semiconductor device using the adhesive sheet of the present invention will be described by way of example. (1) An example in which an adhesive sheet is applied to a tape with an adhesive for TAB and bonding of a semiconductor connecting substrate to a semiconductor Insulating film of polyimide or the like (width: 35 to 70 mm)
The width narrower than the insulating film (29.7 to 60.6)
mm) of the adhesive sheet of the present invention at 100 to 160 ° C.,
Hot roll lamination is performed under the conditions of 0 N / cm and 5 m / min to prepare a tape with an adhesive for TAB. Next, 18 μm of electrolytic copper foil is laminated on the TAB adhesive tape sample under the conditions of 110 to 180 ° C., 30 N / cm, and 1 m / min. Then, in an air oven,
C., 3 hours, 100.degree. C., 5 hours, 150.degree. C., and 5 hours are sequentially performed to prepare a tape with an adhesive for semiconductors with a copper foil.
【0038】得られた銅箔付きのTAB用接着剤付きテ
ープの銅箔面に常法によりフォトレジスト膜形成、エッ
チング、レジスト剥離、電解金メッキ、ソルダーレジス
ト膜形成を行ない、半導体接続用基板(パターン加工T
ABテープ)を作成する(図1)。A photoresist film formation, etching, resist peeling, electrolytic gold plating, and solder resist film formation are performed on the copper foil surface of the TAB adhesive tape with copper foil thus obtained, and the semiconductor connection substrate (pattern) Processing T
AB tape) (FIG. 1).
【0039】該パターン加工TABテープ上に、半導体
集積回路(IC)を、厚さ50μmの本発明の接着剤シ
ートを用い、110〜250℃、3秒でダイボンディン
グし、さらにワイヤーボンディング接続する。ワイヤー
ボンディング条件は、110〜200℃、60〜110
kHzが好ましい。最後にエポキシ系封止樹脂による封
止、ハンダボール接続工程を経てFP−BGA方式の半
導体装置を得る(図2)。On the patterned TAB tape, a semiconductor integrated circuit (IC) is die-bonded at 110 to 250 ° C. for 3 seconds using an adhesive sheet of the present invention having a thickness of 50 μm, and further connected by wire bonding. Wire bonding conditions are 110-200 ° C, 60-110
kHz is preferred. Finally, an FP-BGA type semiconductor device is obtained through a sealing process using an epoxy-based sealing resin and a solder ball connection process (FIG. 2).
【0040】(2)接着剤シートを半導体接続用基板と
補強板との接着に使用した例 厚さ0.25mmのニッケルメッキ銅板に、厚さ100
μmの本発明の接着剤シートを、100〜200℃、3
0N/cm、1m/minの条件で熱ロールラミネート
し、30〜50mm角に打ち抜いた接着剤付き補強板を
作成する。(2) Example in which an adhesive sheet is used for bonding a semiconductor connecting substrate and a reinforcing plate to a nickel-plated copper plate having a thickness of 0.25 mm and a thickness of 100
μm adhesive sheet of the present invention at 100-200 ° C., 3
Hot roll lamination is performed under the conditions of 0 N / cm and 1 m / min, and a reinforcing plate with an adhesive punched into a 30 to 50 mm square is prepared.
【0041】一方、フィンガーリード形成と無電解スズ
メッキを行った以外は(1)と同様に作成したギャング
ボンディング用パターン加工TABテープに、金バンプ
形成した半導体集積回路(IC)を、500℃、1秒の
ギャングボンディング方式でインナーリード接続し、さ
らに液状封止樹脂による封止を行う。この半導体を接続
したパターン加工TABテープに上記の接着剤付き補強
板を、100〜200℃、30MPa、5秒の条件でプ
レス貼り付けし、100℃、1時間の後160℃、2時
間の接着剤の加熱硬化を行い、さらにハンダボール接続
工程を経てテープBGA方式の半導体装置を得る(図
3)。On the other hand, a semiconductor integrated circuit (IC) having gold bumps formed on a TAB tape for gang bonding pattern processing prepared in the same manner as in (1) except that finger lead formation and electroless tin plating were performed, was performed at 500 ° C. for 1 hour. The inner leads are connected by a gang bonding method in seconds, and sealing with a liquid sealing resin is performed. The above-mentioned reinforcing plate with an adhesive is press-attached to the patterned TAB tape to which the semiconductor is connected at 100 to 200 ° C., 30 MPa, and 5 seconds, and is bonded at 160 ° C. for 2 hours after 100 ° C. for 1 hour. The agent is heated and cured, and further through a solder ball connection process, a tape BGA type semiconductor device is obtained (FIG. 3).
【0042】[0042]
【実施例】以下に実施例を挙げて本発明を説明するが、
本発明はこれらの実施例に限定されるものではない。実
施例の説明に入る前に評価方法について述べる。EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.
【0043】評価方法 (1)評価用サンプル作成方法 (a)接着剤シートの作成 実施例および比較例の接着剤組成物をモノクロルベンゼ
ン/エタノール=2/1重量比の溶剤に、濃度25重量
%となるように30℃で撹拌、混合して接着剤溶液を作
成した。この接着剤溶液を乾燥後に12μm厚の接着剤
層となるように、シリコーン処理により離型性を有する
ポリエチレンテレフタレート(PET)保護フィルム
(25μm)上に、バーコータで塗工し、100℃、1
分および160℃で5分間で乾燥した。Evaluation method (1) Method of preparing sample for evaluation (a) Preparation of adhesive sheet The adhesive compositions of the examples and comparative examples were dissolved in a solvent having a monochlorobenzene / ethanol ratio of 2/1 by weight and a concentration of 25% by weight. The mixture was stirred and mixed at 30 ° C. so as to obtain an adhesive solution. The adhesive solution is coated with a bar coater on a polyethylene terephthalate (PET) protective film (25 μm) having release properties by silicone treatment so as to form an adhesive layer having a thickness of 12 μm after drying.
And dried at 160 ° C. for 5 minutes.
【0044】(b)TAB用接着剤付きテープの作成 (a)の接着剤シートを、75μm厚のポリイミドフィ
ルム(宇部興産(株)製、”ユーピレックス”75S)
に、130℃、10N/cm、5m/minの条件で熱
ロールラミネートし、35mm幅のTAB用接着剤付き
テープを作成した。(B) Preparation of tape with adhesive for TAB The adhesive sheet of (a) was converted to a 75 μm-thick polyimide film (“UPILEX” 75S, manufactured by Ube Industries, Ltd.).
Then, hot roll lamination was performed under the conditions of 130 ° C., 10 N / cm, and 5 m / min to prepare a tape with a TAB adhesive having a width of 35 mm.
【0045】(c)パターン加工TABテープの作成 (b)のTAB用接着剤付きテープサンプルに18μの
電解銅箔を、140℃、30N/cm、1m/minの
条件でラミネートした。続いてエアオーブン中で、80
℃、3時間、100℃、5時間、150℃、5時間の順
次加熱硬化処理を行ない、銅箔付きの半導体用接着剤付
きテープを作成した。 得られた銅箔付きの半導体用接
着剤付きテープの銅箔面に常法によりフォトレジスト膜
形成、エッチング、レジスト剥離、電解金メッキを行な
い、評価用サンプルおよび半導体装置接続用基板を作成
した。ニッケルメッキ厚は3μm、金メッキ厚は1μm
とした。(C) Preparation of Patterned TAB Tape An electrolytic copper foil of 18 μm was laminated on the tape sample with a TAB adhesive of (b) at 140 ° C., 30 N / cm, 1 m / min. Then, in an air oven,
C., 3 hours, 100.degree. C., 5 hours, 150.degree. C., and 5 hours were sequentially performed to prepare a tape with a copper foil and an adhesive for a semiconductor. A photoresist film was formed, etched, stripped of resist, and electrolytically gold-plated on the copper foil surface of the obtained tape with adhesive for semiconductors with copper foil by a conventional method to prepare an evaluation sample and a semiconductor device connection substrate. Nickel plating thickness is 3μm, gold plating thickness is 1μm
And
【0046】(d)半導体接続基板とIC接続用接着剤
シートの作成 (a)と同様にして接着剤層が50μm厚の接着剤シー
トを作成した。(D) Preparation of an adhesive sheet for connecting a semiconductor substrate and an IC An adhesive sheet having an adhesive layer having a thickness of 50 μm was prepared in the same manner as in (a).
【0047】(2)評価用半導体装置の作成 (1)(b)で得たTAB用接着剤付きテープに、
(1)(d)で得られた接着剤シートを加熱圧着し、さ
らに接着剤シートの反対面に20mm角のICを加熱圧
着する。この状態で170℃、2時間の加熱硬化を行
う。次いで、ICと配線基板を150℃、110kHz
の条件でワイヤーボンディング接続した後、樹脂封止す
る。最後にハンダボールをリフローにて搭載し、評価用
の半導体装置を得た。(2) Preparation of Evaluation Semiconductor Device (1) The TAB adhesive tape obtained in (b) was
(1) The adhesive sheet obtained in (d) is thermocompression-bonded, and a 20 mm square IC is thermocompression-bonded to the opposite surface of the adhesive sheet. In this state, heat curing is performed at 170 ° C. for 2 hours. Next, the IC and the wiring board were heated at 150 ° C. and 110 kHz.
After wire bonding connection under the conditions described above, resin sealing is performed. Finally, solder balls were mounted by reflow to obtain a semiconductor device for evaluation.
【0048】(3)剥離強度 上記(1)の方法で得た導体幅50μの評価用サンプル
を用いて、導体を90°方向に10mm/minの速度
で剥離し、その際の剥離力を測定した。(3) Peel strength The conductor was peeled at a rate of 10 mm / min in the direction of 90 ° using the sample for evaluation of the conductor width of 50 μ obtained by the above method (1), and the peel force at that time was measured. did.
【0049】(4)高温高湿絶縁信頼性 上記(1)の方法で得た導体幅25μ、導体間距離25
μ、対抗電極長40mmのくし型形状の評価用サンプル
を用いて、恒温恒湿槽(タバイエスペック(株)製、T
PC−211D型)中で130℃、85%RH、直流1
00Vの電圧を連続的に印加した状態において、抵抗値
が107 Ω以下となる絶縁抵抗低下時間を測定した。(4) High-Temperature, High-Humidity Insulation Reliability The conductor width 25 μ and the inter-conductor distance 25 obtained by the method (1) are used.
μ, using a comb-shaped evaluation sample having a counter electrode length of 40 mm, a thermo-hygrostat (Tabayespec Co., Ltd., T
130 ° C, 85% RH, DC1 in PC-211D)
In a state where a voltage of 00 V was continuously applied, the insulation resistance drop time at which the resistance value became 10 7 Ω or less was measured.
【0050】(5)反り評価 (1)(b)のTAB用接着剤付きテープを、幅35m
m×長さ6mmに切断し、保護フィルムを除いた後、8
0℃、3時間、100℃、5時間、150℃、5時間の
順次加熱硬化処理を行ない、硬化させた。このサンプル
を23℃、55%RHの条件で24時間調湿したのち、
サンプルの最大反り高さを1/1000mmのマイクロ
メータで測定した。(5) Evaluation of warpage (1) The tape with the TAB adhesive of (b) was applied to a tape having a width of 35 m.
mx 6mm in length, after removing the protective film, 8
Heat-curing treatment was sequentially performed at 0 ° C., 3 hours, 100 ° C., 5 hours, 150 ° C., and 5 hours to cure. After humidifying this sample for 24 hours at 23 ° C. and 55% RH,
The maximum warp height of the sample was measured with a micrometer of 1/1000 mm.
【0051】(6)耐リフロー性 上記(2)の方法で作成した20mm角の評価用半導体
装置のサンプルを、85℃、85%RHの雰囲気下で1
68時間調湿した後、すみやかに最高温度230℃、1
0秒の赤外線リフロー炉を通過させ、膨れおよび剥がれ
を確認した。 (7)温度サイクル試験 上記(4)の方法で作成した20mm角の評価用半導体
装置サンプルを、熱サイクル試験器(タバイエスペック
(株)製、PL−3型)中で、−20℃〜100℃、最低
および最高温度で各1時間保持の条件で600サイクル
処理し、剥がれの発生を評価した。(6) Reflow Resistance A 20 mm square sample of the semiconductor device for evaluation prepared by the method of (2) above was subjected to a test under an atmosphere of 85 ° C. and 85% RH.
After humidifying for 68 hours, the maximum temperature immediately reaches 230 ° C, 1
After passing through an infrared reflow furnace for 0 seconds, swelling and peeling were confirmed. (7) Temperature cycle test A 20 mm square sample of the semiconductor device for evaluation prepared by the method of the above (4) was subjected to a heat cycle tester (Tabayspeck).
(PL-3 type), at -20 ° C. to 100 ° C., at minimum and maximum temperatures for 1 hour each for 600 cycles, and the occurrence of peeling was evaluated.
【0052】実施例1 (1)接着剤シートの作成 ダイマー酸を含有するポリアミド連鎖(A)およびエー
テル基とエステル基を有する連鎖の2つから構成される
ブロック共重合体であるポリエーテルエステルアミド樹
脂(富士化成工業(株)製、TPAE−12)、エポキ
シ樹脂(東都化成(株)製、“エポトート”YDDP−
100、エポキシ当量260)、クレゾール型フェノー
ルレゾール樹脂(群栄化学(株)製、PL2407)、
p−t−Bu/ビスフェノールA混合型フェノールレゾ
ール樹脂(昭和高分子(株)製、CKM935)、球状
シリカ(アドマテックス(株)製、SO−C5)、2−
エチルイミダゾールをそれぞれ表1の組成比となるよう
に配合し、評価方法(1)(a)および(d)の条件に
従って接着剤シートを作成した。Example 1 (1) Preparation of Adhesive Sheet Polyetheresteramide which is a block copolymer composed of a polyamide chain (A) containing dimer acid and a chain having an ether group and an ester group Resin (TPAE-12, manufactured by Fuji Kasei Kogyo Co., Ltd.), Epoxy resin ("Epototo" YDDP-, manufactured by Toto Kasei Co., Ltd.)
100, epoxy equivalent 260), cresol type phenol resole resin (PL2407, manufactured by Gunei Chemical Co., Ltd.),
pt-Bu / bisphenol A mixed type phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM935), spherical silica (manufactured by Admatex, SO-C5), 2-
Ethyl imidazole was blended so as to have the composition ratio shown in Table 1, and an adhesive sheet was prepared according to the conditions of evaluation methods (1), (a) and (d).
【0053】(2)TAB用接着剤付きテープの作成 得られた接着剤シートを用いて評価方法(1)(b)に
従ってTAB用接着剤付きテープとした。 (3)半導体接続用基板の作成 上記の手順で得られたTAB用接着剤付きテープを用い
て、前述の評価方法(1)(c)と同一の方法で半導体
集積回路接続用の導体回路を形成し、半導体接続用基板
(パターンテープ)を得た。特性を表2に示す。 (4)半導体装置の作成 上記(3)の半導体接続用基板を用いて、(2)の評価
方法に従い、評価用半導体装置を作成した。図3は得ら
れた半導体装置の断面を示したものである。特性を表2
に示す。(2) Preparation of TAB Adhesive Tape Using the obtained adhesive sheet, a TAB adhesive tape was prepared according to evaluation methods (1) and (b). (3) Preparation of Substrate for Connecting Semiconductor Using the tape with TAB adhesive obtained in the above procedure, a conductor circuit for connecting a semiconductor integrated circuit was formed in the same manner as in the above evaluation methods (1) and (c). Thus, a substrate (pattern tape) for semiconductor connection was obtained. Table 2 shows the characteristics. (4) Production of Semiconductor Device An evaluation semiconductor device was produced using the semiconductor connection substrate of the above (3) according to the evaluation method of (2). FIG. 3 shows a cross section of the obtained semiconductor device. Table 2 shows the characteristics
Shown in
【0054】実施例2 ポリエーテルエステルアミド樹脂(富士化成工業(株)
製、TPAE−12)、ダイマー酸ポリアミド樹脂(ヘ
ンケルジャパン(株)製、”マクロメルト”690
0)、エポキシ樹脂(油化シェルエポキシ(株)製、
“エピコート”1032、エポキシ当量260および”
エピコート”828、エポキシ当量186)、p−t−
Bu/ストレート混合型フェノールレゾール樹脂(昭和
高分子(株)製、CKM1282)、2−エチルイミダ
ゾールをそれぞれ表1の組成比となるように配合し、評
価方法(1)(a)および(d)の条件に従って接着剤
シートを作成した。Example 2 Polyetheresteramide resin (Fuji Kasei Kogyo Co., Ltd.)
TPAE-12), dimer acid polyamide resin (manufactured by Henkel Japan K.K., "Macromelt" 690)
0), epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd.)
"Epicoat" 1032, epoxy equivalent 260 and "
Epicoat “828, epoxy equivalent 186), pt-
Bu / straight mixed type phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM1282) and 2-ethylimidazole were blended so as to have the composition ratios shown in Table 1, respectively, and evaluation methods (1) (a) and (d) An adhesive sheet was prepared according to the conditions described in (1).
【0055】得られた接着剤シートを用いて実施例1と
同様にしてTAB用接着剤付きテープ、半導体接続用基
板(パターンテープ)および評価用半導体装置を作成し
た。特性を表2に示す。Using the obtained adhesive sheet, a tape with a TAB adhesive, a substrate for semiconductor connection (pattern tape) and a semiconductor device for evaluation were prepared in the same manner as in Example 1. Table 2 shows the characteristics.
【0056】実施例3 ポリアミド連鎖(A)およびエーテル基とエステル基を
有する連鎖から構成されるブロック共重合体であるポリ
エーテルエステルアミド樹脂(エルフ アトケム社製、
PEBAX2533)、ダイマー酸ポリアミド樹脂(ヘ
ンケルジャパン(株)製、”マクロメルト”690
0)、エポキシ樹脂(東都化成(株)製、“エポトー
ト”YDDP−100、エポキシ当量260)、フェノ
ールノボラック型エポキシ樹脂(油化シェルエポキシ
製、”エピコート”152、エポキシ当量175)、ス
トレート型フェノールレゾール樹脂(住友デュレズ
(株)製、PR50087)、p−t−Bu型フェノー
ルレゾール樹脂(昭和高分子(株)製、CKM163
4)、高純度球状シリカ(アドマテックス(株)製、S
O−E1)、2−エチルイミダゾールをそれぞれ表1の
組成比となるように配合し、評価方法(1)(a)およ
び(d)の条件に従って接着剤シートを作成した。Example 3 A polyetheresteramide resin (a block copolymer composed of a polyamide chain (A) and a chain having an ether group and an ester group) (manufactured by Elf Atochem Co., Ltd.)
PEBAX2533), dimer acid polyamide resin (manufactured by Henkel Japan K.K., “Macromelt” 690)
0), epoxy resin (manufactured by Toto Kasei Co., Ltd., "Epototo" YDDP-100, epoxy equivalent: 260), phenol novolak type epoxy resin (manufactured by Yuka Shell Epoxy, "Epicoat" 152, epoxy equivalent: 175), straight type phenol Resole resin (PR50087, manufactured by Sumitomo Durez Co., Ltd.), pt-Bu type phenol resole resin (CKM163, manufactured by Showa Polymer Co., Ltd.)
4), high-purity spherical silica (Admatex Co., Ltd., S
OE1) and 2-ethylimidazole were blended so as to have the composition ratios shown in Table 1, respectively, and adhesive sheets were prepared according to the conditions of the evaluation methods (1), (a) and (d).
【0057】得られた接着剤シートを用いて実施例1と
同様にしてTAB用接着剤付きテープ、半導体接続用基
板(パターンテープ)および評価用半導体装置を作成し
た。特性を表2に示す。Using the obtained adhesive sheet, a tape with an adhesive for TAB, a substrate for connecting a semiconductor (pattern tape) and a semiconductor device for evaluation were prepared in the same manner as in Example 1. Table 2 shows the characteristics.
【0058】実施例4 (1)ポリエステルアミド樹脂の合成 酸成分として、ダイマー酸(PRIPOL1009、ユ
ニケマ社製)、アミン成分としてヘキサメチレンジアミ
ン(和光純薬(株)製)、グリコール成分としてネオペ
ンチルグリコール(和光純薬(株)製)を用い、カルボ
キシル基/アミノ基/水酸基比を1/0.8/0.2と
して、酸/アミン/グリコール反応物、消泡剤および1
%以下の三酸化アンチモン、モノブチルモノヒドロキシ
錫オキシド触媒、リン酸を加え、ポリエステルアミド反
応体を調製した。このポリエステルアミド反応体を、1
40℃,1時間撹拌加熱後、205℃まで昇温し、約
1.5時間撹拌した。約15mmHgの真空下で、0.
5時間保持し、温度を低下させた。最後に、酸化防止剤
を添加し、ポリエステルアミド樹脂を取り出した。Example 4 (1) Synthesis of Polyesteramide Resin Dimer acid (PRIPOL1009, manufactured by Unichema) as an acid component, hexamethylenediamine (manufactured by Wako Pure Chemical Industries, Ltd.) as an amine component, and neopentyl glycol as a glycol component (Manufactured by Wako Pure Chemical Industries, Ltd.), the ratio of carboxyl group / amino group / hydroxyl group was 1 / 0.8 / 0.2, acid / amine / glycol reactant, defoamer and 1
% Or less of antimony trioxide, a monobutyl monohydroxytin oxide catalyst, and phosphoric acid were added to prepare a polyesteramide reactant. This polyesteramide reactant is
After stirring and heating at 40 ° C. for 1 hour, the temperature was raised to 205 ° C., and the mixture was stirred for about 1.5 hours. Under a vacuum of about 15 mmHg,
Hold for 5 hours to reduce temperature. Finally, an antioxidant was added, and the polyesteramide resin was taken out.
【0059】(2)接着剤組成物の調製 得られたポリエステルアミド樹脂、ダイマー酸ポリアミ
ド樹脂(ヘンケルジャパン(株)製、”マクロメルト”
6900)、ビスフェノールAノボラック型エポキシ樹
脂(油化シェルエポキシ(株)製、“エピコート”15
7S70、エポキシ当量210)、フェノールノボラッ
ク樹脂(群栄化学(株)製、PSM4326)、p−t
−Bu/ストレート混合型フェノールレゾール樹脂(昭
和高分子(株)製、CKM1282)、高純度球状シリ
カ(アドマテックス(株)製、SO−E1)、トリフェ
ニルホスフィンをそれぞれ表1の組成比となるように配
合し、評価方法(1)(a)および(d)の条件に従っ
て接着剤シートを作成した。(2) Preparation of Adhesive Composition The obtained polyesteramide resin and dimer acid polyamide resin (manufactured by Henkel Japan K.K., "Macromelt")
6900), bisphenol A novolak epoxy resin (“Epicoat” 15 manufactured by Yuka Shell Epoxy Co., Ltd.)
7S70, epoxy equivalent 210), phenol novolak resin (PSM4326, manufactured by Gunei Chemical Co., Ltd.), pt
-Bu / straight mixed type phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM1282), high-purity spherical silica (manufactured by Admatechs, Inc., SO-E1), and triphenylphosphine have the composition ratios shown in Table 1, respectively. And an adhesive sheet was prepared according to the conditions of evaluation methods (1), (a) and (d).
【0060】得られた接着剤シートを用いて実施例1と
同様にしてTAB用接着剤付きテープ、半導体接続用基
板(パターンテープ)および評価用半導体装置を作成し
た。特性を表2に示す。Using the obtained adhesive sheet, a tape with an adhesive for TAB, a substrate for connecting semiconductors (pattern tape) and a semiconductor device for evaluation were prepared in the same manner as in Example 1. Table 2 shows the characteristics.
【0061】比較例1 ポリエーテルエステルアミドに替えて可溶性ポリアミド
(日本リルサン(株)製、”プラタボンド”M127
6)を用いた以外は実施例1と同様の方法で、それぞれ
表1に示した原料および組成比で調合した接着剤を用い
て半導体装置用接着剤付きテープを得た。特性を表2に
示す。Comparative Example 1 Soluble polyamide ("PLATABOND" M127, manufactured by Nippon Rilsan Co., Ltd.) was used instead of polyetheresteramide.
A tape with an adhesive for a semiconductor device was obtained in the same manner as in Example 1 except that 6) was used, and using the raw materials and the adhesive prepared at the composition ratios shown in Table 1, respectively. Table 2 shows the characteristics.
【0062】比較例2 ポリエーテルエステルアミドに替えて可溶性ポリエステ
ル(ユニチカ(株)製、”エリーテル”UE3690)
を用い、メチルエチルケトンを溶剤とした以外は実施例
1と同様の方法で、それぞれ表1に示した原料および組
成比で調合した接着剤を用いて半導体装置用接着剤付き
テープを得た。特性を表2に示す。Comparative Example 2 Soluble polyester ("Elitel" UE3690, manufactured by Unitika Ltd.) in place of polyetheresteramide
In the same manner as in Example 1 except that methyl ethyl ketone was used as a solvent, a tape with an adhesive for a semiconductor device was obtained using the raw materials and adhesives prepared at the composition ratios shown in Table 1. Table 2 shows the characteristics.
【0063】[0063]
【表1】 [Table 1]
【0064】[0064]
【表2】 [Table 2]
【0065】実施例および比較例の結果より、本発明に
より得られる半導体用接着剤組成物は、絶縁信頼性に優
れるものであることに加え、接着力および反りが優れて
いた。From the results of the examples and comparative examples, the adhesive composition for semiconductors obtained according to the present invention was excellent not only in insulation reliability but also in adhesive strength and warpage.
【0066】[0066]
【発明の効果】本発明によれば、優れた絶縁性を保持し
つつ、優れた接着性、反りの防止および温度サイクル耐
久性を同時に達成し得る半導体用接着剤組成物およびそ
れを用いた接着剤シートならびに半導体装置を提供でき
る。According to the present invention, an adhesive composition for a semiconductor which can simultaneously achieve excellent adhesiveness, prevention of warpage and durability against temperature cycling while maintaining excellent insulating properties, and bonding using the same. An agent sheet and a semiconductor device can be provided.
【図1】本発明の半導体装置用接着剤付きテープを加工
して得られた、半導体集積回路搭載前の半導体接続用基
板(パターンテープ)の一態様の斜視図。FIG. 1 is a perspective view of one embodiment of a substrate (pattern tape) for semiconductor connection before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for a semiconductor device of the present invention.
【図2】本発明の半導体装置用接着剤付きテープを用い
た半導体装置(CSP)の一態様の断面図。FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for a semiconductor device of the present invention.
【図3】本発明の半導体装置用接着剤付きテープを用い
た半導体装置(BGA)の一態様の断面図。FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for a semiconductor device of the present invention.
1、13、17 可撓性を有する絶縁性フィルム 2、7、22 半導体接続基板の導体を接着する接着剤 3 スプロケット孔 4 デバイス孔 5 半導体集積回路接続用の導体 6、16 半田ボール接続用ランド 8、20 半導体集積回路 9、25 封止樹脂 10 ワイヤーボンド用パッド 11 金ワイヤー 12 ダイボンディング材 14、23 半田ボール 15、26 ソルダーレジスト 18 補強板 19 補強板接着用の接着剤 21 金バンプ 24 インナーリ−ド 1, 13, 17 Flexible insulating film 2, 7, 22 Adhesive for bonding conductor of semiconductor connection board 3 Sprocket hole 4 Device hole 5 Conductor for connecting semiconductor integrated circuit 6, 16 Land for connecting solder ball 8, 20 Semiconductor integrated circuit 9, 25 Sealing resin 10 Pad for wire bonding 11 Gold wire 12 Die bonding material 14, 23 Solder ball 15, 26 Solder resist 18 Reinforcing plate 19 Adhesive for bonding reinforcing plate 21 Gold bump 24 Inner -Do
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/60 311 H01L 21/60 311W 5F067 23/14 23/50 Y 23/373 23/14 Z 23/50 23/36 M Fターム(参考) 4J004 AA12 AA13 AA16 CA04 CA06 CA08 CB03 FA05 FA08 4J040 EB051 EB052 EC001 EC002 EC061 EC062 EC071 EC072 EC161 EC162 EC261 EC262 EG041 EG042 GA08 NA20 5F036 BC05 BD21 5F044 MM11 5F047 BA21 BB03 5F067 AA10 AA11 CC06 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) H01L 21/60 311 H01L 21/60 311W 5F067 23/14 23/50 Y 23/373 23/14 Z 23/50 23 / 36 MF term (reference) 4J004 AA12 AA13 AA16 CA04 CA06 CA08 CB03 FA05 FA08 4J040 EB051 EB052 EC001 EC002 EC061 EC062 EC071 EC072 EC161 EC162 EC261 EC262 EG041 EG042 GA08 NA20 5F036 BC05 BD21 5F044A11 MM11
Claims (9)
ミドを必須成分として含有することを特徴とする半導体
装置用接着剤組成物。1. An adhesive composition for a semiconductor device, comprising a polyesteramide having an ester group in a main chain as an essential component.
するポリエーテルエステルアミドであることを特徴とす
る請求項1記載の半導体装置用接着剤組成物。2. The adhesive composition for a semiconductor device according to claim 1, wherein the polyesteramide is a polyetheresteramide containing an ether bond.
エステル連鎖(B)、エーテル連鎖(C)のうち、いず
れか少なくとも2種の連鎖をそれぞれ含有する共重合体
であることを特徴とする請求項1記載の半導体装置用接
着剤組成物。3. The polyesteramide is an amide linkage (A),
The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition is a copolymer containing at least two types of each of an ester chain (B) and an ether chain (C).
有することを特徴とする請求項1記載の半導体装置用接
着剤組成物。4. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains a phenol resin (D).
することを特徴とする請求項1記載の半導体装置用接着
剤組成物。5. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains an epoxy resin (E).
ボン酸を必須成分として含むことを特徴とする請求項1
記載の半導体装置用接着剤組成物。6. The polyesteramide according to claim 1, wherein the polyesteramide contains a dicarboxylic acid having 36 carbon atoms as an essential component.
The adhesive composition for a semiconductor device according to the above.
用接着剤組成物からなる接着剤層と、少なくとも1層の
保護フィルム層を有する接着剤シート。7. An adhesive sheet comprising an adhesive layer comprising the adhesive composition for a semiconductor device according to claim 1 and at least one protective film layer.
用接着剤組成物を用いた半導体接続用基板。8. A substrate for semiconductor connection using the adhesive composition for a semiconductor device according to claim 1.
半導体装置。9. A semiconductor device using the substrate for semiconductor connection according to claim 8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000175114A JP2001354938A (en) | 2000-06-12 | 2000-06-12 | Adhesive composition for semiconductor device, and adhesive sheet prepared by using the composition, semiconductor-connecting substrate, and semiconductor device prepared by using the composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000175114A JP2001354938A (en) | 2000-06-12 | 2000-06-12 | Adhesive composition for semiconductor device, and adhesive sheet prepared by using the composition, semiconductor-connecting substrate, and semiconductor device prepared by using the composition |
Publications (1)
Publication Number | Publication Date |
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JP2001354938A true JP2001354938A (en) | 2001-12-25 |
Family
ID=18677039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000175114A Pending JP2001354938A (en) | 2000-06-12 | 2000-06-12 | Adhesive composition for semiconductor device, and adhesive sheet prepared by using the composition, semiconductor-connecting substrate, and semiconductor device prepared by using the composition |
Country Status (1)
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JP (1) | JP2001354938A (en) |
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---|---|---|---|---|
JP2005535135A (en) * | 2002-08-05 | 2005-11-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for manufacturing an electrical substrate frame, method for manufacturing a surface mountable semiconductor device and substrate frame strip |
JP2008045036A (en) * | 2006-08-17 | 2008-02-28 | Toyobo Co Ltd | Polyamide resin, and composition and adhesive each using the same, adhesive sheet using the adhesive, and printed circuit board using the adhesive sheet |
JP2010021570A (en) * | 2002-08-05 | 2010-01-28 | Osram Opto Semiconductors Gmbh | Substrate frame, substrate frame strip, and surface-mountable light-emitting semiconductor element |
WO2012011265A1 (en) * | 2010-07-23 | 2012-01-26 | タツタ電線株式会社 | Adhesive agent composition and adhesive film |
WO2012164836A1 (en) * | 2011-05-31 | 2012-12-06 | タツタ電線株式会社 | Adhesive composition and adhesive film |
WO2024009969A1 (en) * | 2022-07-06 | 2024-01-11 | 東亞合成株式会社 | Adhesive composition, bonding film, laminate with adhesive composition layer, laminate, and electromagnetic wave shield film |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2005535135A (en) * | 2002-08-05 | 2005-11-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for manufacturing an electrical substrate frame, method for manufacturing a surface mountable semiconductor device and substrate frame strip |
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WO2024009969A1 (en) * | 2022-07-06 | 2024-01-11 | 東亞合成株式会社 | Adhesive composition, bonding film, laminate with adhesive composition layer, laminate, and electromagnetic wave shield film |
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