JP2001354938A - Adhesive composition for semiconductor device, and adhesive sheet prepared by using the composition, semiconductor-connecting substrate, and semiconductor device prepared by using the composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an adhesive composition for semiconductors, which, while retaining excellent insulation properties, can achieve excellent adhesiveness, warpage prevention, and temperature cycle endurance, and to prepare an adhesive sheet and to provide a semiconductor device both prepared by using the same. SOLUTION: This adhesive composition contains, as an essential ingredient, a polyesteramide having ester groups in the main chain. Both the adhesive sheet and the semiconductor device are prepared by using the composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for semiconductor connection, such as a tape automated bonding (TAB) type pattern processing tape, a ball grid array (BGA) package interposer, and the like, which are used when mounting a semiconductor integrated circuit. , Lead frame fixing tape, L
OC fixing tape, die bonding material, heat spreader, reinforcing plate, shield material adhesive, solder resist,
TECHNICAL FIELD The present invention relates to an adhesive composition suitable for producing an article and the like, an adhesive sheet using the same, a substrate for semiconductor connection, and a semiconductor device.

[0002]

2. Description of the Related Art For mounting a semiconductor integrated circuit (IC), a method using a metal lead frame is most often used. In recent years, however, IC connection on an organic insulating film such as glass epoxy or polyimide is performed. The method using a semiconductor connection substrate called an interposer on which a conductor pattern is formed has been increasing.

[0003] As a package form, a BGA (ball grid array) and a CSP (chip scale package) in which connection terminals are arranged on the back surface of the package have come to be used.

[0004] Examples of the connection method of the semiconductor connection substrate include a tape automated bonding (TAB) method, a wire bonding method, and a flip chip method.

[0005] Therefore, TA
A tape with an adhesive for B can be used. Naturally, the BGA method is particularly suitable for a process of laminating a copper foil after mechanically punching a hole for a solder ball or a device hole for an IC, although it is naturally advantageous to a connection method having inner leads. On the other hand, in the case of wire bonding and flip chip connection without an inner lead, not only a tape with an adhesive for TAB,
It is also possible to use a copper-clad laminate in which a copper foil has already been laminated and the adhesive has been cured by heating.

Further, components such as a reinforcing plate (stiffener) for imparting rigidity and flatness or a heat radiating plate (heat spreader) for radiating heat are also laminated on the semiconductor connecting substrate. Even glue is used.

[0007] With the progress of miniaturization and high-density of electronic equipment, adhesives used for these semiconductor connection substrates often ultimately remain in the package, so that insulation and heat resistance are increased. It is required to satisfy various characteristics such as adhesiveness and the like.

The pattern pitch (conductor width and width between conductors) of a substrate for semiconductor connection has become very narrow, and has high insulation reliability and copper foil adhesive strength (hereinafter referred to as adhesive strength) in a narrow conductor width. The need for adhesives is growing. Recently, especially as an accelerated test for insulation reliability, 130
℃, 85% RH high temperature and high humidity, or 125 ℃ ～ 150
Attention has been paid to the rate of decrease in insulation resistance in a state where a voltage is continuously applied at a high temperature of ° C. Further, the reliability of the semiconductor device may be reduced due to stress generated by changes in environmental conditions such as temperature and humidity, and the semiconductor device may be destroyed. Therefore, the function of relieving stress due to temperature and humidity, particularly thermal stress, is extremely important for adhesives for semiconductors.

As an example of such an adhesive, a conventional TA
The adhesive layer of the tape for B was mainly composed of a mixed composition of an epoxy resin and / or a phenol resin and a polyamide resin (JP-A-2-14347, JP-A-3-217035, etc.). On the other hand, there is also disclosed a method of adding an epoxy having a siloxane structure for the purpose of improving the adhesive strength and the heat resistance as described above (JP-A-5-259228).

[0010]

However, conventional semiconductor adhesive compositions are not always satisfactory in the above-described insulation reliability and adhesive strength. For example, because insulation decreases rapidly in the state of continuous voltage application at high temperature and high humidity,
Insulation reliability will be insufficient. In particular, when an integrated circuit or the like that operates at a high speed generates a large amount of heat, the reliability is reduced and the semiconductor device is broken.

In order to improve the insulation reliability, it is effective to enhance the crosslinking by the thermosetting resin and to suppress the molecular motion by increasing the glass transition temperature (Tg), and such a design of the conventional adhesive is usually used. Met. However, with such an adhesive having a high cross-linking density, the flexibility is reduced, and the reduction in adhesiveness and the occurrence of warpage cannot be avoided. In addition, the flexibility at low temperatures is low, and the effect of relaxing thermal stress is small, thereby lowering the reliability of the semiconductor. That is, it was impossible to simultaneously achieve excellent insulation and excellent adhesion, prevention of warpage, and thermal stress relaxation effect (temperature cycle durability).

The present invention solves the above problems and provides an adhesive composition for a semiconductor device capable of simultaneously achieving excellent adhesiveness, prevention of warpage, and temperature cycle durability while maintaining excellent insulating properties. An object of the present invention is to provide an adhesive sheet, a semiconductor connection substrate, and a semiconductor device using the same.

[0013]

That is, the present invention provides an adhesive composition for a semiconductor device comprising a polyesteramide having an ester group in a main chain as an essential component, and an adhesive sheet using the same. , A semiconductor connection substrate and a semiconductor device.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have conducted intensive studies on the relationship between the chemical structure of the adhesive component of the adhesive composition for semiconductors and the adhesiveness to metal and insulation to achieve the above object. The present inventors have found that an adhesive composition for a semiconductor device having excellent adhesion and improved warpage can be obtained while maintaining insulation reliability, and the present invention has been accomplished.

The adhesive composition for a semiconductor of the present invention may be any one containing a copolymer containing an amide bond and an ester bond as essential components, and its structure is not particularly limited. Having an ester bond is preferable because the advantages of polyester having low water absorption and excellent solvent resistance can be effectively used in addition to polyamide having good adhesiveness, flexibility, and insulating properties.

The structure of the monomer is not particularly limited, and it may be a polyesteramide formed by any combination of a dicarboxylic acid compound, a diamine compound, a hydroxyamine compound, a hydroxycarboxylic acid compound, a dihydroxy compound, a lactam compound, and a lactone compound. The skeletal structure is
From the viewpoint of flexibility and low water absorption, preferably it has 2 to 6 carbon atoms.
It is preferable to use 0, more preferably a monomer containing 6 to 36 aliphatic hydrocarbon groups or ether chains, or a monomer containing 6 to 36 aliphatic hydrocarbon groups or ether chains. In particular, a polyesteramide resin containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) as an essential component, which has flexibility in the adhesive layer and has excellent insulating properties due to low water absorption, is suitable. . Carbon number 6
If it exceeds 0, the properties of the polyolefin are approached, so that the adhesiveness decreases, which is not preferable. Since the ether chain has excellent flexibility at low temperatures, it is effective for improving the temperature cycle durability of the semiconductor device. The ether chain has 2 to 1 carbon atoms
Two are preferred. If the number of carbon atoms exceeds 12, the properties of the ether structure are not exhibited and the effect of imparting flexibility is low, so that the temperature cycle durability is ultimately poor.

On the other hand, for controlling the softening point, a cyclic aliphatic skeleton is also preferably used. Examples of such a substance include isophoronediamine, cyclohexanediamine, piperazine, and cyclohexanedicarboxylic acid.

It is also effective to use a monomer having an aromatic skeleton for imparting heat resistance. For example,
A benzene ring, a naphthalene ring, an anthracene ring having a hydrocarbon group having 1 to 12 carbon atoms or a halogenated hydrocarbon group, and a covalent bond thereof (such as biphenyl), a hydrocarbon group having 1 to 12 carbon atoms, and a halogenated hydrocarbon; A skeleton structure in which a plurality of groups are bonded by a group, a sulfide group, a sulfone group, a phosphate group, an imino group, or the like is exemplified.

Bonding group equivalent of polyesteramide (molecular weight per binding group (sum of amide group and ester group))
Is 100 to 800, preferably 200 to 700, and more preferably 250 to 600. If it is less than 100, the number of bonding groups is large, so that the water absorption increases or the solubility decreases, which makes processing difficult, which is not preferable. On the other hand, 700
Exceeding the range is not preferred because the adhesive strength to a copper foil, a metal plate, an insulating film or the like is reduced.

The number of ester groups in the polyesteramide may be one or more in all the bonding groups. For example, the polyesteramide of the present invention also includes a case where the bonding portion of the hetero-chain is an ester bond in a block or graft copolymer as described later. When it has an ether chain, its content is from 1 to
The content is 50% by weight, preferably 2 to 30% by weight, and more preferably 5 to 20% by weight. If it is less than 1% by weight, flexibility is not exhibited, and if it exceeds 50% by weight, heat resistance is inferior.

The polyester amide in the present invention includes an amide chain (A) in which monomer units are bonded only by an amide bond, an ester chain (B) also bonded only by an ester bond, and an ether chain bonded only by an ether bond. A copolymer containing at least two kinds of the chains (C) may be used. Further, the copolymer may be either a block copolymer or a graft copolymer, and is preferably used because the properties of polyamide, polyester and polyether are more easily exhibited and the range of applicable monomers is widened.

Any of the above monomers can be used for the amide chain (A), ester chain (B) and ether chain (C). Therefore, any combination of AB type, ABA type, ABC type, etc. may be used. For example, a block or graft in which an amide chain (A) has a carboxylic acid at the terminal or main chain and an ester chain (B) or an ether chain (C) having a hydroxyl group at the terminal is bonded to the carboxylic acid by an ester bond. Copolymers are included in this range as AB or AC block (or graft) copolymers.

The polyesteramide of the present invention is usually used as a thermoplastic resin having flexibility. By introducing a self-crosslinkable functional group such as an epoxy group, a methylol group or a thiol group, the polyesteramide can be used as a crosslinkable resin. It is also possible. Further, it may have a functional group capable of reacting with a thermosetting resin such as a phenol resin (D) and an epoxy resin (E) described below. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. Since the bond with the thermosetting resin is strengthened by these functional groups and the heat resistance is improved, the amount of the polyesteramide added to the adhesive composition of the present invention is preferably 2 to 80% by weight, more preferably 5 to 60% by weight, more preferably 10 to 60% by weight
50% by weight. If it is less than 2% by weight, flexibility cannot be obtained, and if it exceeds 80% by weight, heat resistance is lacking.

The inclusion of a thermoplastic resin other than polyesteramide in the adhesive layer of the present invention is not limited at all. The thermoplastic resin has functions such as adhesive strength, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. The addition amount of the thermoplastic resin other than the polyesteramide is 1 to 30% by weight, preferably 5 to 20% by weight.

As the thermoplastic resin used in the present invention, acrylonitrile-butadiene copolymer (NB)
R), acrylonitrile-butadiene rubber-styrene resin (ABS), styrene-butadiene-ethylene resin (SEBS), acryl, polyvinyl butyral, polyamide, polyester, polyimide, polyamideimide, polyurethane and the like.

In the present invention, by adding a phenol resin (D) to the adhesive composition, insulation reliability, chemical resistance, and strength of the adhesive composition can be further improved.

As the phenol resin (D), any known phenol resin such as a novolak phenol resin and a resol phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, and p-phenylphenol; cyclic alkyl-modified phenols such as terpene and dicyclopentadiene; and heterocycles such as nitro, halogen, cyano, and amino groups. Examples thereof include those having a functional group containing an atom, those having a skeleton such as naphthalene and anthracene, and resins made of polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol. Among them, a resol type phenol resin is more preferable because it has an effect of improving the insulation resistance reduction time.

The amount of the phenol resin added is preferably 5 to 80% by weight of the adhesive composition, more preferably 10 to 70% by weight.
%, More preferably more than 35% and less than 60% by weight. If it is less than 5% by weight, the insulating property is lowered, so that it is not preferable. If it is more than 80% by weight, the adhesive strength is lowered, and neither is preferable. In particular, the adhesive composition may contain more than 35% by weight of the resole type phenolic resin and more than 60% by weight.
It is preferable to contain the following.

It is preferable to add a known epoxy resin (E) to the adhesive layer of the present invention because the adhesive strength can be improved. The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but bisphenol F, bisphenol A, bisphenol S, dihydroxynaphthalene, dicyclopentadiene diphenol,
Examples thereof include diglycidyl ethers such as dicyclopentadiene dixylenol, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, and alicyclic epoxy.

The amount of the epoxy resin added is preferably 2 to 50% by weight, more preferably 5 to 30% by weight of the adhesive composition.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive composition of the present invention is not limited at all. For example, aromatic polyamines, amine complexes of boron trifluoride such as boron trifluoride triethylamine complex, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, phthalic anhydride, trianhydride Organic acids such as melitic acid, dicyandiamide, triphenylphosphine, diazabicycloundecene and the like can be used. The added amount is preferably 0.05 to 10% by weight, more preferably 0.1 to 5% by weight.

Examples of the finely divided inorganic components include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, and calcium aluminate hydrate, silica, alumina, zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, and the like. Metal oxides such as magnesium oxide, titanium oxide, iron oxide, cobalt oxide, chromium oxide, and talc; inorganic salts such as calcium carbonate; aluminum, gold, silver, nickel, iron, and other metal fine particles; or carbon black;
Glass is exemplified, and styrene and NBR are used as organic components.
Examples include crosslinked polymers such as rubber, acrylic rubber, polyamide, polyimide, and silicone. These may be used alone or in combination of two or more. The average particle diameter of the fine particle component is preferably 0.2 to 5 μ in consideration of dispersion stability. Also, the compounding amount is suitably 2 to 50 parts by weight of the whole adhesive composition.

In addition to the above components, addition of organic and inorganic components such as antioxidants and ion scavengers is not limited as long as the properties of the adhesive are not impaired.

Next, a method for producing an adhesive sheet using the semiconductor adhesive composition of the present invention will be described.

A coating obtained by dissolving the adhesive composition in a solvent is applied to the protective film and dried. The thickness of the adhesive layer is 5
It is preferable to apply so that the thickness becomes 200 μm. Drying conditions are 100 to 200 ° C. for 1 to 5 minutes. The solvent is not particularly limited, but a mixture of an aromatic compound such as toluene, xylene, and chlorobenzene and an alcohol compound such as methanol, ethanol, and propanol is preferable. The film thus obtained is wound as it is or a protective film is further laminated. Slit to an arbitrary width according to the usage form.

The term "protective film layer" as used herein means that the adhesive sheet can be peeled from the adhesive surface without damaging the form of the adhesive sheet before laminating the adhesive sheet to an adherend such as a copper foil, a metal plate, or an insulating film. Although not particularly limited, examples thereof include a polyester film, a polyolefin film coated with a silicone or a fluorine compound, and paper laminated with these.

Next, a method for manufacturing a semiconductor device using the adhesive sheet of the present invention will be described by way of example. (1) An example in which an adhesive sheet is applied to a tape with an adhesive for TAB and bonding of a semiconductor connecting substrate to a semiconductor Insulating film of polyimide or the like (width: 35 to 70 mm)
The width narrower than the insulating film (29.7 to 60.6)
mm) of the adhesive sheet of the present invention at 100 to 160 ° C.,
Hot roll lamination is performed under the conditions of 0 N / cm and 5 m / min to prepare a tape with an adhesive for TAB. Next, 18 μm of electrolytic copper foil is laminated on the TAB adhesive tape sample under the conditions of 110 to 180 ° C., 30 N / cm, and 1 m / min. Then, in an air oven,
C., 3 hours, 100.degree. C., 5 hours, 150.degree. C., and 5 hours are sequentially performed to prepare a tape with an adhesive for semiconductors with a copper foil.

A photoresist film formation, etching, resist peeling, electrolytic gold plating, and solder resist film formation are performed on the copper foil surface of the TAB adhesive tape with copper foil thus obtained, and the semiconductor connection substrate (pattern) Processing T
AB tape) (FIG. 1).

On the patterned TAB tape, a semiconductor integrated circuit (IC) is die-bonded at 110 to 250 ° C. for 3 seconds using an adhesive sheet of the present invention having a thickness of 50 μm, and further connected by wire bonding. Wire bonding conditions are 110-200 ° C, 60-110
kHz is preferred. Finally, an FP-BGA type semiconductor device is obtained through a sealing process using an epoxy-based sealing resin and a solder ball connection process (FIG. 2).

(2) Example in which an adhesive sheet is used for bonding a semiconductor connecting substrate and a reinforcing plate to a nickel-plated copper plate having a thickness of 0.25 mm and a thickness of 100
μm adhesive sheet of the present invention at 100-200 ° C., 3
Hot roll lamination is performed under the conditions of 0 N / cm and 1 m / min, and a reinforcing plate with an adhesive punched into a 30 to 50 mm square is prepared.

On the other hand, a semiconductor integrated circuit (IC) having gold bumps formed on a TAB tape for gang bonding pattern processing prepared in the same manner as in (1) except that finger lead formation and electroless tin plating were performed, was performed at 500 ° C. for 1 hour. The inner leads are connected by a gang bonding method in seconds, and sealing with a liquid sealing resin is performed. The above-mentioned reinforcing plate with an adhesive is press-attached to the patterned TAB tape to which the semiconductor is connected at 100 to 200 ° C., 30 MPa, and 5 seconds, and is bonded at 160 ° C. for 2 hours after 100 ° C. for 1 hour. The agent is heated and cured, and further through a solder ball connection process, a tape BGA type semiconductor device is obtained (FIG. 3).

[0042]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

Evaluation method (1) Method of preparing sample for evaluation (a) Preparation of adhesive sheet The adhesive compositions of the examples and comparative examples were dissolved in a solvent having a monochlorobenzene / ethanol ratio of 2/1 by weight and a concentration of 25% by weight. The mixture was stirred and mixed at 30 ° C. so as to obtain an adhesive solution. The adhesive solution is coated with a bar coater on a polyethylene terephthalate (PET) protective film (25 μm) having release properties by silicone treatment so as to form an adhesive layer having a thickness of 12 μm after drying.
And dried at 160 ° C. for 5 minutes.

(B) Preparation of tape with adhesive for TAB The adhesive sheet of (a) was converted to a 75 μm-thick polyimide film (“UPILEX” 75S, manufactured by Ube Industries, Ltd.).
Then, hot roll lamination was performed under the conditions of 130 ° C., 10 N / cm, and 5 m / min to prepare a tape with a TAB adhesive having a width of 35 mm.

(C) Preparation of Patterned TAB Tape An electrolytic copper foil of 18 μm was laminated on the tape sample with a TAB adhesive of (b) at 140 ° C., 30 N / cm, 1 m / min. Then, in an air oven,
C., 3 hours, 100.degree. C., 5 hours, 150.degree. C., and 5 hours were sequentially performed to prepare a tape with a copper foil and an adhesive for a semiconductor. A photoresist film was formed, etched, stripped of resist, and electrolytically gold-plated on the copper foil surface of the obtained tape with adhesive for semiconductors with copper foil by a conventional method to prepare an evaluation sample and a semiconductor device connection substrate. Nickel plating thickness is 3μm, gold plating thickness is 1μm
And

(D) Preparation of an adhesive sheet for connecting a semiconductor substrate and an IC An adhesive sheet having an adhesive layer having a thickness of 50 μm was prepared in the same manner as in (a).

(2) Preparation of Evaluation Semiconductor Device (1) The TAB adhesive tape obtained in (b) was
(1) The adhesive sheet obtained in (d) is thermocompression-bonded, and a 20 mm square IC is thermocompression-bonded to the opposite surface of the adhesive sheet. In this state, heat curing is performed at 170 ° C. for 2 hours. Next, the IC and the wiring board were heated at 150 ° C. and 110 kHz.
After wire bonding connection under the conditions described above, resin sealing is performed. Finally, solder balls were mounted by reflow to obtain a semiconductor device for evaluation.

(3) Peel strength The conductor was peeled at a rate of 10 mm / min in the direction of 90 ° using the sample for evaluation of the conductor width of 50 μ obtained by the above method (1), and the peel force at that time was measured. did.

(4) High-Temperature, High-Humidity Insulation Reliability The conductor width 25 μ and the inter-conductor distance 25 obtained by the method (1) are used.
μ, using a comb-shaped evaluation sample having a counter electrode length of 40 mm, a thermo-hygrostat (Tabayespec Co., Ltd., T
130 ° C, 85% RH, DC1 in PC-211D)
In a state where a voltage of 00 V was continuously applied, the insulation resistance drop time at which the resistance value became 10 ⁷ Ω or less was measured.

(5) Evaluation of warpage (1) The tape with the TAB adhesive of (b) was applied to a tape having a width of 35 m.
mx 6mm in length, after removing the protective film, 8
Heat-curing treatment was sequentially performed at 0 ° C., 3 hours, 100 ° C., 5 hours, 150 ° C., and 5 hours to cure. After humidifying this sample for 24 hours at 23 ° C. and 55% RH,
The maximum warp height of the sample was measured with a micrometer of 1/1000 mm.

(6) Reflow Resistance A 20 mm square sample of the semiconductor device for evaluation prepared by the method of (2) above was subjected to a test under an atmosphere of 85 ° C. and 85% RH.
After humidifying for 68 hours, the maximum temperature immediately reaches 230 ° C, 1
After passing through an infrared reflow furnace for 0 seconds, swelling and peeling were confirmed. (7) Temperature cycle test A 20 mm square sample of the semiconductor device for evaluation prepared by the method of the above (4) was subjected to a heat cycle tester (Tabayspeck).
(PL-3 type), at -20 ° C. to 100 ° C., at minimum and maximum temperatures for 1 hour each for 600 cycles, and the occurrence of peeling was evaluated.

Example 1 (1) Preparation of Adhesive Sheet Polyetheresteramide which is a block copolymer composed of a polyamide chain (A) containing dimer acid and a chain having an ether group and an ester group Resin (TPAE-12, manufactured by Fuji Kasei Kogyo Co., Ltd.), Epoxy resin ("Epototo" YDDP-, manufactured by Toto Kasei Co., Ltd.)
100, epoxy equivalent 260), cresol type phenol resole resin (PL2407, manufactured by Gunei Chemical Co., Ltd.),
pt-Bu / bisphenol A mixed type phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM935), spherical silica (manufactured by Admatex, SO-C5), 2-
Ethyl imidazole was blended so as to have the composition ratio shown in Table 1, and an adhesive sheet was prepared according to the conditions of evaluation methods (1), (a) and (d).

(2) Preparation of TAB Adhesive Tape Using the obtained adhesive sheet, a TAB adhesive tape was prepared according to evaluation methods (1) and (b). (3) Preparation of Substrate for Connecting Semiconductor Using the tape with TAB adhesive obtained in the above procedure, a conductor circuit for connecting a semiconductor integrated circuit was formed in the same manner as in the above evaluation methods (1) and (c). Thus, a substrate (pattern tape) for semiconductor connection was obtained. Table 2 shows the characteristics. (4) Production of Semiconductor Device An evaluation semiconductor device was produced using the semiconductor connection substrate of the above (3) according to the evaluation method of (2). FIG. 3 shows a cross section of the obtained semiconductor device. Table 2 shows the characteristics
Shown in

Example 2 Polyetheresteramide resin (Fuji Kasei Kogyo Co., Ltd.)
TPAE-12), dimer acid polyamide resin (manufactured by Henkel Japan K.K., "Macromelt" 690)
0), epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd.)
"Epicoat" 1032, epoxy equivalent 260 and "
Epicoat “828, epoxy equivalent 186), pt-
Bu / straight mixed type phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM1282) and 2-ethylimidazole were blended so as to have the composition ratios shown in Table 1, respectively, and evaluation methods (1) (a) and (d) An adhesive sheet was prepared according to the conditions described in (1).

Using the obtained adhesive sheet, a tape with a TAB adhesive, a substrate for semiconductor connection (pattern tape) and a semiconductor device for evaluation were prepared in the same manner as in Example 1. Table 2 shows the characteristics.

Example 3 A polyetheresteramide resin (a block copolymer composed of a polyamide chain (A) and a chain having an ether group and an ester group) (manufactured by Elf Atochem Co., Ltd.)
PEBAX2533), dimer acid polyamide resin (manufactured by Henkel Japan K.K., “Macromelt” 690)
0), epoxy resin (manufactured by Toto Kasei Co., Ltd., "Epototo" YDDP-100, epoxy equivalent: 260), phenol novolak type epoxy resin (manufactured by Yuka Shell Epoxy, "Epicoat" 152, epoxy equivalent: 175), straight type phenol Resole resin (PR50087, manufactured by Sumitomo Durez Co., Ltd.), pt-Bu type phenol resole resin (CKM163, manufactured by Showa Polymer Co., Ltd.)
4), high-purity spherical silica (Admatex Co., Ltd., S
OE1) and 2-ethylimidazole were blended so as to have the composition ratios shown in Table 1, respectively, and adhesive sheets were prepared according to the conditions of the evaluation methods (1), (a) and (d).

Using the obtained adhesive sheet, a tape with an adhesive for TAB, a substrate for connecting a semiconductor (pattern tape) and a semiconductor device for evaluation were prepared in the same manner as in Example 1. Table 2 shows the characteristics.

Example 4 (1) Synthesis of Polyesteramide Resin Dimer acid (PRIPOL1009, manufactured by Unichema) as an acid component, hexamethylenediamine (manufactured by Wako Pure Chemical Industries, Ltd.) as an amine component, and neopentyl glycol as a glycol component (Manufactured by Wako Pure Chemical Industries, Ltd.), the ratio of carboxyl group / amino group / hydroxyl group was 1 / 0.8 / 0.2, acid / amine / glycol reactant, defoamer and 1
% Or less of antimony trioxide, a monobutyl monohydroxytin oxide catalyst, and phosphoric acid were added to prepare a polyesteramide reactant. This polyesteramide reactant is
After stirring and heating at 40 ° C. for 1 hour, the temperature was raised to 205 ° C., and the mixture was stirred for about 1.5 hours. Under a vacuum of about 15 mmHg,
Hold for 5 hours to reduce temperature. Finally, an antioxidant was added, and the polyesteramide resin was taken out.

(2) Preparation of Adhesive Composition The obtained polyesteramide resin and dimer acid polyamide resin (manufactured by Henkel Japan K.K., "Macromelt")
6900), bisphenol A novolak epoxy resin (“Epicoat” 15 manufactured by Yuka Shell Epoxy Co., Ltd.)
7S70, epoxy equivalent 210), phenol novolak resin (PSM4326, manufactured by Gunei Chemical Co., Ltd.), pt
-Bu / straight mixed type phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM1282), high-purity spherical silica (manufactured by Admatechs, Inc., SO-E1), and triphenylphosphine have the composition ratios shown in Table 1, respectively. And an adhesive sheet was prepared according to the conditions of evaluation methods (1), (a) and (d).

Using the obtained adhesive sheet, a tape with an adhesive for TAB, a substrate for connecting semiconductors (pattern tape) and a semiconductor device for evaluation were prepared in the same manner as in Example 1. Table 2 shows the characteristics.

Comparative Example 1 Soluble polyamide ("PLATABOND" M127, manufactured by Nippon Rilsan Co., Ltd.) was used instead of polyetheresteramide.
A tape with an adhesive for a semiconductor device was obtained in the same manner as in Example 1 except that 6) was used, and using the raw materials and the adhesive prepared at the composition ratios shown in Table 1, respectively. Table 2 shows the characteristics.

Comparative Example 2 Soluble polyester ("Elitel" UE3690, manufactured by Unitika Ltd.) in place of polyetheresteramide
In the same manner as in Example 1 except that methyl ethyl ketone was used as a solvent, a tape with an adhesive for a semiconductor device was obtained using the raw materials and adhesives prepared at the composition ratios shown in Table 1. Table 2 shows the characteristics.

[0063]

[Table 1]

[0064]

[Table 2]

From the results of the examples and comparative examples, the adhesive composition for semiconductors obtained according to the present invention was excellent not only in insulation reliability but also in adhesive strength and warpage.

[0066]

According to the present invention, an adhesive composition for a semiconductor which can simultaneously achieve excellent adhesiveness, prevention of warpage and durability against temperature cycling while maintaining excellent insulating properties, and bonding using the same. An agent sheet and a semiconductor device can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view of one embodiment of a substrate (pattern tape) for semiconductor connection before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for a semiconductor device of the present invention.

FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for a semiconductor device of the present invention.

[Explanation of symbols]

 1, 13, 17 Flexible insulating film 2, 7, 22 Adhesive for bonding conductor of semiconductor connection board 3 Sprocket hole 4 Device hole 5 Conductor for connecting semiconductor integrated circuit 6, 16 Land for connecting solder ball 8, 20 Semiconductor integrated circuit 9, 25 Sealing resin 10 Pad for wire bonding 11 Gold wire 12 Die bonding material 14, 23 Solder ball 15, 26 Solder resist 18 Reinforcing plate 19 Adhesive for bonding reinforcing plate 21 Gold bump 24 Inner -Do

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H01L 21/60 311 H01L 21/60 311W 5F067 23/14 23/50 Y 23/373 23/14 Z 23/50 23 / 36 MF term (reference) 4J004 AA12 AA13 AA16 CA04 CA06 CA08 CB03 FA05 FA08 4J040 EB051 EB052 EC001 EC002 EC061 EC062 EC071 EC072 EC161 EC162 EC261 EC262 EG041 EG042 GA08 NA20 5F036 BC05 BD21 5F044A11 MM11

Claims (9)

[Claims] 1. An adhesive composition for a semiconductor device, comprising a polyesteramide having an ester group in a main chain as an essential component. 2. The adhesive composition for a semiconductor device according to claim 1, wherein the polyesteramide is a polyetheresteramide containing an ether bond. 3. The polyesteramide is an amide linkage (A),
The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition is a copolymer containing at least two types of each of an ester chain (B) and an ether chain (C). 4. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains a phenol resin (D). 5. The adhesive composition for a semiconductor device according to claim 1, wherein the adhesive composition contains an epoxy resin (E). 6. The polyesteramide according to claim 1, wherein the polyesteramide contains a dicarboxylic acid having 36 carbon atoms as an essential component.
The adhesive composition for a semiconductor device according to the above. 7. An adhesive sheet comprising an adhesive layer comprising the adhesive composition for a semiconductor device according to claim 1 and at least one protective film layer. 8. A substrate for semiconductor connection using the adhesive composition for a semiconductor device according to claim 1. 9. A semiconductor device using the substrate for semiconductor connection according to claim 8.