JPH11260864A - Tape with adhesive for tab and substrate for connecting semiconductor integrated circuit and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a tape with an adhesive for a semiconductor device, having superior high adhesiveness and high insulation, and a substrate for connecting a semiconductor using this tape, and a semiconductor device. SOLUTION: This tape with an adhesive for TAB is composed of a laminated product, having an adhesive layer and a protecting film layer on an organic insulating film with flexibility, and this adhesive layer contains polyamide resin and phenol derivative shown by at least one kind of formula as an indispensable component. Here, X and Y indicate at least one kind of group selected from among OH, COOH, NH2 , CN, and SO3 H groups, and those X and Y may be made either the same or different. Also (m) indicates an integer which is 0<=m<=2, and (n) indicates an integer which is 1<=n<=3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape automated bonding (T)
AB) Tape with adhesive (hereinafter referred to as TA)
B) and a substrate for connecting a semiconductor integrated circuit and a semiconductor device using the same.

[0002]

2. Description of the Related Art An ordinary TAB tape has a three-layer structure in which a flexible organic insulating film such as a polyimide film is laminated with a releasing polyester film or the like as an adhesive layer and a protective film layer. It is composed of

[0003] TAB tapes include (1) perforation of sprocket and device holes, (2) thermal lamination with copper foil,
It is processed into a TAB tape (pattern tape) through processing steps such as (3) pattern formation (resist coating, etching, resist removal) and (4) tin or gold-plating. FIG. 1 shows the shape of the pattern tape. An adhesive 2 and a conductor pattern 5 are provided on the organic insulating film 1, a sprocket hole 3 for feeding the film, and a device hole 4 for installing a device. FIG. 2 is a cross-sectional view of one embodiment of the semiconductor device of the present invention. The inner lead portion 6 of the pattern tape is thermocompression-bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 having the protective film 11, and the semiconductor integrated circuit is mounted. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin 9. In addition, there is also adopted a method in which a conductor of a pattern tape and a gold bump of a semiconductor integrated circuit are connected by wire bonding without having an inner lead portion. Such a semiconductor device is called a tape carrier package (TCP) type semiconductor device. Finally, the TCP type semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7 (outer lead bonding), and is mounted on an electronic device.

On the other hand, as electronic devices have become smaller and lighter in recent years, a semiconductor package has a QFP (quad flat flat) in which conventional connection terminals (outer leads) are arranged on the side of the package for the purpose of high-density mounting. Package), S
Instead of an OP (Small Outline Package), a BGA (Ball Grid Array) in which connection terminals are arranged on the back surface of the package and a CSP (Chip Scale Package) have been used in part.
The BGA and CSP are structurally most different from QFP and SOP in that the former requires a substrate called an interposer, while the latter requires a metal lead frame to use a substrate. And not. As the interposer referred to here, one obtained by bonding a copper foil to an organic insulating film such as a glass epoxy substrate or polyimide is generally used. Therefore, the tape with an adhesive for TAB of the present invention can also be used for semiconductor devices such as BGA and CSP.
A and CSP are also included in the semiconductor device of the present invention. 3 and 4 are cross-sectional views of one embodiment of the semiconductor device (BGA, CSP) of the present invention. In the figure, 12 and 20 are organic insulating films, 13 and 21 are adhesives, 14 and 22 are conductor patterns,
15 and 23 are semiconductor integrated circuits, 16 and 24 are sealing resins,
17 and 25 are gold bumps, 18 and 26 are solder balls, 1
9 indicates a stiffener, and 27 indicates a solder resist.

[0005] In any of the above package forms, the adhesive layer of the adhesive tape for semiconductor devices ultimately remains in the package, so that it is required to satisfy various properties such as insulation, heat resistance and adhesiveness. Is done. As electronic devices have become smaller and more dense, the pattern pitch (conductor width and conductor width) of semiconductor connection substrates has become extremely narrow, and copper foil with high insulation reliability and a narrow conductor width has been developed. There is an increasing need for an adhesive having an adhesive force (hereinafter, referred to as an adhesive force). Recently, particularly as an accelerated test for insulation reliability, a high temperature and high humidity of 130 ° C. and 85% RH or 125
Attention has been paid to the rate of decrease in insulation resistance in a state where a voltage is continuously applied at a high temperature of 150 ° C. to 150 ° C.

On the other hand, high-density mounting and automation have also been advanced in mounting components on a printed circuit board. Instead of the conventional "insertion mounting method" in which lead pins are inserted into holes in the board,
The “surface mounting method” in which components are soldered to the substrate surface has become mainstream. With the shift to the surface mounting method, packages have been required to have solder heat resistance.

That is, in the conventional pin insertion mounting method,
In the soldering process, the lead portion of the package is only partially heated, but in the surface mounting method, the entire package is immersed in a heating medium and heated. As a soldering method in this surface mounting method, a solder bath immersion, a saturated vapor of an inert gas (a vapor phase method), an infrared reflow method, or the like is used. In any method, the entire package is heated to a high temperature of 210 to 270 ° C. Therefore, in a package using a conventional connection substrate as an interposer, there is a problem that swelling occurs at the time of soldering and mounting failure occurs.

[0008] It is said that the defective mounting at the time of soldering is caused by the moisture absorbed by the package up to the mounting process explosively turning into steam and expanding at the time of heating by soldering. A method is used in which the product is shipped in a dry and sealed container.

However, the method of enclosing the dry package in a container has disadvantages that the manufacturing process and the handling of the product are complicated, and the product price is high.

[0010] Based on the present situation, various improvements of the connection board have been studied. For example, it has been proposed that a fine hole having a diameter of 0.1 mm or less is made in the connection board in order to easily remove the absorbed moisture. Have been. However,
The method of forming a fine hole for moisture in the connection substrate has not only insufficient solder heat resistance of the package, but also has problems such as an increase in cost due to an increase in the number of processing steps and a limitation in routing of wiring on the substrate.

In any of the above package forms, the adhesive layer of the TAB tape ultimately remains in the package, so that it is required to have insulation, heat resistance and adhesion. In recent years, as electronic devices have been miniaturized and densified, the conductor width in the TAB method has become extremely narrow, and the need for an adhesive having high adhesive strength and insulating properties has increased.

From such a viewpoint, a mixed composition of an epoxy resin and / or a phenol resin and a polyamide resin has been mainly used for the adhesive layer of the conventional TAB tape. (Japanese Unexamined Patent Publication (Kokai) No. 2-143447,
No. -217035).

[0013]

However, it is difficult to balance the adhesiveness and the insulating property among the above-mentioned properties, and the conventional TAB tape improves either the adhesiveness or the insulating property. On the other hand, the other decreases, and it cannot be said that the overall characteristics are necessarily sufficient. As for the adhesiveness, as the conductor width becomes narrower, the adhesive strength is reduced, and the conductor may be peeled off in a post-process such as bonding, so that it may not be possible to connect to an integrated circuit or a circuit board. This is mainly due to a shortage of the absolute value of the adhesive strength and a decrease in the effective adhesive area due to the penetration of the plating solution between the conductor and the adhesive.

In general, it is possible to increase the breaking energy by lowering the elastic modulus of the adhesive, thereby improving the adhesive strength.
There is a problem that the adhesive is softened under high humidity and the insulation property is reduced. On the other hand, when the degree of crosslinking of the adhesive is increased in order to improve the insulating property, the adhesive is liable to be brittlely fractured, and the internal stress is increased due to curing shrinkage, and the adhesive strength is reduced.

An object of the present invention is to solve such a problem and to provide a novel TAB tape excellent in adhesiveness and a semiconductor device using the same.

[0016]

Means for Solving the Problems In order to achieve the above object, the present inventors have conducted intensive studies on the relationship between the chemical structure of the adhesive component of the TAB tape and the adhesiveness to metal, and as a result, have found that TA with excellent adhesion and insulation properties by skillfully combining with polyamide resin
It has been found that a tape for B can be obtained, which has led to the present invention.

That is, the present invention comprises a laminate having an adhesive layer and a protective film layer on a flexible organic insulating film, wherein the adhesive layer comprises a polyamide resin and at least one kind of general resin. A tape with an adhesive for TAB, comprising a phenol derivative having a substituent represented by the formula (1) as an essential component, a substrate for connecting a semiconductor integrated circuit, and a semiconductor device using the same.

[0018]

Embedded image (X and Y are OH, COOH, NH ₂ , CN, SO ₃ H
A group containing at least one member selected from the group consisting of X and Y
May be the same or different. M represents an integer satisfying 0 ≦ m ≦ 2, and n represents an integer satisfying 1 ≦ n ≦ 3. )

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The phenol derivative used in the present invention contains at least one or more functional groups in the phenol nucleus as in the general formula (1). The functional groups are represented by X and Y in the general formula (1), and specifically include an OH group, COOH
A group containing at least one selected from a group, an NH ₂ group, a CN group, and an SO ₃ H group, and X and Y may be the same or different. The position of the substituent is not particularly limited.

For example, 3-aminophenol, resorcinol, catechol, hydroquinone, pyrogallol, 3-hydroxybenzoic acid, 3-cyanophenol,
2,3-diaminophenol, 2-amino-3-hydroxybenzoic acid, 3-hydroxyphenylacetamide,
3-hydroxyisophthalic acid, 3-hydroxyphenylacetic acid and 3-phenolsulfonic acid.

In general, a phenol resin is a suitable blend material having good compatibility with polyamide and imparting appropriate heat resistance and breaking strength to polyamide by thermosetting. Such heat resistance and breaking strength are ultimately important for the balance between insulation and adhesion. However, in the case of a conventional phenolic resin, it is not always easy to obtain an appropriate crosslink density after blending with a polyamide because the equivalent of methylol groups in the entire phenolic resin is limited. As a result, it is difficult to control the balance between the insulating property and the adhesive property.

On the other hand, in the present invention, since the equivalent of the functional group other than the phenolic hydroxyl group is smaller than the equivalent of the methylol group of the phenolic resin by using the phenol derivative, the phenol derivative is used as a reaction point to obtain an appropriate crosslinking density. This is considered to be that the insulation and the adhesion were improved.

Specifically, OH groups, COOH groups, NH ₂ groups and SO ₃ H groups are known to react with epoxy resins, and by adjusting the quantitative ratio of the phenol derivative having the functional groups, A cured product having an appropriate crosslinking density can be obtained. Further, the CN group has excellent adhesion to the metal and the organic insulating film, and it is considered that the phenol derivative having the functional group itself contributed to the improvement of the adhesion. Specific compounds include resorcinol having an OH group, 2-amino-3-hydroxybenzoic acid having an NH ₂ group and a COOH group, 3-phenolsulfonic acid having SO ₃ H, and 3-cyanophenol having a CN group. It is not limited to this.

As the polyamide resin used in the present invention, various known resins can be used. In particular, a material containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) as an essential component, which has flexibility in the adhesive layer and has excellent insulating properties due to a low water absorption, is preferable. Polyamide resin containing dimer acid is obtained by polycondensation of dimer acid and diamine according to a conventional method.In this case, adipic acid other than dimer acid, azelaic acid, dicarboxylic acid such as sebacic acid is contained as a copolymer component. Is also good. Diamines are ethylenediamine, hexamethylenediamine, piperazine,
And so on. From the viewpoint of hygroscopicity and solubility, 2
A mixture of more than one species may be used.

The mixing ratio of the phenol derivative to the polyamide resin is usually 5 to 60 parts by weight, preferably 10 to 100 parts by weight of the polyamide resin.
４０40 parts by weight. If the amount of the phenolic resin is less than 5 parts by weight, the effect of improving the adhesiveness and the insulating property is not sufficient. Also,
Exceeding 60 parts by weight is not preferred because the insulating property is reduced.

In the present invention, by adding a known epoxy resin to the adhesive layer, the adhesiveness and insulation can be further improved. The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but diglycidyl ethers such as bisphenol F, bisphenol A, bisphenol S, dihydroxynaphthalene, epoxidized phenol novolak, and epoxidized cresol novolak. Epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, and the like. The amount of the epoxy resin to be added is 5 to 100 parts by weight, preferably 20 to 70 parts by weight, based on 100 parts by weight of the polyamide resin.

Further, the adhesive layer may contain a known phenol resin such as a novolak type phenol resin or a resol type phenol resin, which is effective in improving insulation properties and heat resistance such as thermal deformation. The addition amount of the phenol resin is 5 to 100 parts by weight, preferably 20 to 70 parts by weight based on 100 parts by weight of the polyamide resin.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited at all. For example, aromatic polyamines, amine complexes of boron trifluoride such as boron trifluoride triethylamine complex, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, phthalic anhydride, trianhydride Organic acids such as melitic acid, dicyandiamide, and known compounds such as triphenylphosphine can be used. The addition amount is preferably 0.1 to 10 parts by weight based on 100 parts by weight of the polyamide resin.

In addition to the above components, addition of organic and inorganic components such as an antioxidant and an ion scavenger is not limited as long as the properties of the adhesive are not impaired.

The flexible insulating film referred to in the present invention is a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or glass cloth impregnated with epoxy resin. Of the composite material having a thickness of 25 to 125 μm, and a plurality of films selected from these may be laminated and used. If necessary, a surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical surface roughening, and easy adhesion coating treatment can be performed.

The protective film layer in the present invention is not particularly limited as long as it can be peeled from the adhesive surface without damaging the form of the TAB tape before the copper foil is thermally laminated.
For example, a polyester film or a polyolefin film coated with a silicone or fluorine compound, and a paper obtained by laminating the same.

Next, a method for producing a tape with an adhesive for TAB will be described. To a flexible insulating film,
A paint obtained by dissolving the adhesive composition in a solvent is applied and dried. It is preferable to apply the adhesive layer so that the film thickness is 10 to 25 μm. Drying conditions are 100-200 ° C,
1 to 5 minutes. The solvent is not particularly limited, but a mixture of an aromatic compound such as toluene, xylene, and chlorobenzene and an alcohol compound such as methanol, ethanol, and propanol is preferable. A protective film is laminated on the film thus obtained, and finally slit into a width of about 35 to 158 mm.

Using the adhesive tape for a semiconductor device thus obtained, a substrate for semiconductor connection can be manufactured. Further, a semiconductor device can be manufactured using the semiconductor connection substrate.

[0034]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

Evaluation method (1) Method of preparing sample for evaluation An electrolytic copper foil of 18 µm was laminated on a tape sample with an adhesive for TAB at 140 ° C and 0.1 MPa. Then, in an air oven at 80 ° C for 3 hours, 100
C., 5 hours, 150.degree. C., 5 hours in order to prepare a TAB tape with copper foil. Photoresist film formation, etching, and resist peeling were performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, and samples for evaluation of adhesive strength and insulating property were prepared.

(2) Tin plating treatment The sample obtained by the above method (1) was immersed in a borofluoric acid-based electroless tin plating solution at 70 ° C. for 5 minutes.
5 μm thick plating was applied.

(3) Peeling Strength Using the evaluation sample having a conductor width of 50 μm obtained by the above methods (1) and (2), the conductor was moved 50 mm in the 90 ° direction.
/ Min, and the peeling force at that time was measured.

(4) Insulation Reliability A conductor width of 200 μm obtained by the methods (1) and (2).
m, 130 ° C. in an unsaturated pressure cooker using a sample for evaluation of a comb shape having a distance between conductors of 50 μm.
In a state in which a voltage of 85% RH and 100 V were continuously applied, the time when the resistance value was 1/10 or less of the initial value was measured.

(5) Calculation of Adhesion Retention Rate The change in adhesive force of the TAB tape due to plating was calculated by the following equation.

Adhesion retention = (adhesion after plating / adhesion before plating) × 100.

Reference Example 1 (Synthesis of Polyamide Resin) Dimer acid PRIPOL1009 (manufactured by Unichema) and adipic acid were used as the acid, and the acid / amine ratio was almost equal, and the acid / amine reactant, defoaming agent and 1% or less of a phosphoric acid catalyst was added to prepare a reactant. This reactant is
After stirring and heating at 140 ° C. for 1 hour, the temperature was raised to 205 ° C., and the mixture was stirred for about 1.5 hours. It was kept under vacuum of about 2 kPa for 0.5 hour to lower the temperature. Finally, an antioxidant was added, and a polyamide resin having a weight average molecular weight of 20,000 and an acid value of 10 was taken out.

Example 1 (a) Preparation of Tape with Adhesive for Semiconductor The polyamide resin, epoxy resin ("Epicoat" 828, epoxy equivalent 186, manufactured by Yuka Shell Epoxy Co., Ltd.) obtained in Reference Example, phenol resin ( CKM1282 (Showa Polymer Co., Ltd.) and the phenol derivatives shown in Table 1 were blended so as to have the composition ratios shown in Table 2, and 0.5% by weight of dicyandiamide based on the solid content was added as a curing accelerator. The mixture was stirred and mixed with a mixed solvent of methanol / monochlorobenzene at 30 ° C. so as to have a concentration of 20% by weight to prepare an adhesive solution.
A 25 μm-thick polyethylene terephthalate film (“Lumilar” manufactured by Toray Industries, Inc.) is applied to a dry thickness of about 18 μm, and dried at 100 ° C., 1 minute, and 160 ° C. for 5 minutes to prepare an adhesive sheet. did. Further, the obtained adhesive sheet was coated on a 75 μm-thick polyimide film (“UPILEX” 75 manufactured by Ube Industries, Ltd.).
S) was laminated under the conditions of 120 ° C. and 0.1 MPa to prepare a tape with an adhesive for TAB. Table 2 shows the characteristics.

(B) Preparation of Substrate for Connecting Semiconductor Using the adhesive tape for TAB obtained by the above procedure, the same method as in the above-mentioned evaluation methods (1) and (2) was used to connect the semiconductor integrated circuit. Was formed, and the pattern tape shown in FIG. 1 was obtained.

(C) Preparation of Semiconductor Device Using the pattern tape of (2) above, inner lead bonding was performed at 450 ° C. for 1 minute to connect a semiconductor integrated circuit. Thereafter, an epoxy-based liquid sealant (“Chipcoat” 1320- manufactured by Namics Corporation)
In 617), resin sealing was performed to obtain a semiconductor device. FIG.
Shows a cross section of the obtained semiconductor device.

Examples 2 to 4 and Comparative Example 1 In the same manner as in Example 1, a tape with an adhesive for TAB was obtained by using the raw materials and adhesives prepared according to the composition ratios shown in Tables 1 and 2, respectively. . Table 2 shows the characteristics.

[0046]

[Table 1]

[0047]

[Table 2]

From the examples and comparative examples in Table 2, it can be seen that the TAB adhesive tape obtained by the present invention greatly contributes to the improvement of the adhesiveness while maintaining good insulation reliability.

[0049]

Industrial Applicability The present invention is to provide a novel TAB adhesive tape excellent in adhesiveness and a semiconductor device using the same industrially. The reliability and economy of the semiconductor device for mounting can be improved.

[Brief description of the drawings]

FIG. 1 is a perspective view of one embodiment of a pattern tape before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for TAB of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device using the tape with an adhesive for TAB of the present invention.

FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for a semiconductor device of the present invention;

FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for a semiconductor device of the present invention;

[Explanation of symbols]

 1, 12, 20 Flexible insulating film 2, 13, 21 Adhesive 3 Sprocket hole 4 Device hole 5, 14, 22 Conductor for connecting a semiconductor integrated circuit 6 Inner lead part 7 Outer lead part 8, 15, Reference Signs List 23 semiconductor integrated circuit 9, 16, 24 sealing resin 10, 17, 25 gold bump 11 protective film 18, 26 solder ball 19 reinforcing plate 27 solder resist

Claims (6)

[Claims] 1. An organic insulating film having flexibility,
TAB comprising a laminate having an adhesive layer and a protective film layer, wherein the adhesive layer contains a polyamide resin and at least one or more phenol derivatives represented by the general formula (1) as essential components. Tape with adhesive. Embedded image (X and Y are OH, COOH, NH ₂ , CN, SO ₃ H
A group containing at least one member selected from the group consisting of X and Y
May be the same or different. M represents an integer satisfying 0 ≦ m ≦ 2, and n represents an integer satisfying 1 ≦ n ≦ 3. ) 2. The tape with an adhesive for TAB according to claim 1, wherein the adhesive layer contains an epoxy resin. 3. The tape with an adhesive for TAB according to claim 1, wherein the polyamide resin contains a dicarboxylic acid having 36 carbon atoms as an essential component. 4. The T according to claim 1, wherein the adhesive layer contains at least one phenolic resin.
Tape with adhesive for AB. 5. A substrate for connecting a semiconductor integrated circuit using the tape with an adhesive for TAB according to claim 1. 6. A semiconductor device using the substrate for connecting a semiconductor integrated circuit according to claim 5.