JPH0964111A - Tape with adhesive for tab and semiconductor device - Google Patents

Tape with adhesive for tab and semiconductor device

Info

Publication number
JPH0964111A
JPH0964111A JP7212055A JP21205595A JPH0964111A JP H0964111 A JPH0964111 A JP H0964111A JP 7212055 A JP7212055 A JP 7212055A JP 21205595 A JP21205595 A JP 21205595A JP H0964111 A JPH0964111 A JP H0964111A
Authority
JP
Japan
Prior art keywords
adhesive
tape
tab
organometallic compound
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7212055A
Other languages
Japanese (ja)
Inventor
Shoji Kigoshi
将次 木越
Yukitsuna Konishi
幸綱 小西
Seiya Sugiura
靖也 杉浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP7212055A priority Critical patent/JPH0964111A/en
Publication of JPH0964111A publication Critical patent/JPH0964111A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Abstract

PROBLEM TO BE SOLVED: To enable a novel tape for a TAB having excellent adhesive properties and insulating properties by investigating the relationship of the chemical structure of the adhesive component of the tape for the TAB and the adhesive properties and insulating properties to a metal and skillfully combining an organometallic compound and a polyamide resin. SOLUTION: A layer, particularly, an adhesive layer composed of a laminate with an adhesive layer and a protective film layer on an organic insulating film having flexibility contains at least one kind or more of organometallic compounds selected from a polyamid resin and an organometallic compound shown by the formula of M(O-R')n(O-CO-R<2> )m or a metallic chelate compound constituted of the organometallic compound and a chelate aegent as essential ingredients. Where M in formula represents a metallic element, (n) and (m) naural numbers and R<1> and R<2> substitutional or non-substitutional monovalent hydrocarbon groups. Accordingly, a novel tape for a TAB having excellent adhesive properties and insulating properties is acquired.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体集積回路の実
装方法であるテープオートメーテッドボンディング(T
AB)方式に用いられる接着剤付きテープ(以下、TA
B用テープと称する)およびそれを用いた半導体装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape automated bonding (T)
Tape with adhesive used in the AB method (hereinafter, TA
B) and a semiconductor device using the same.

【0002】[0002]

【従来の技術】通常のTAB用テープは、ポリイミドフ
ィルム等の可撓性を有する有機絶縁性フィルム上に、接
着剤層および保護フィルム層として離型性を有するポリ
エステルフィルム等を積層した3層構造より構成されて
いる。
2. Description of the Related Art An ordinary TAB tape has a three-layer structure in which a flexible organic insulating film such as a polyimide film is laminated with a releasing polyester film or the like as an adhesive layer and a protective film layer. It is composed of

【0003】TAB用テープは、スプロケットおよび
デバイス孔の穿孔、銅箔との熱ラミネート、パター
ン形成(レジスト塗布、エッチング、レジスト除去)、
スズまたは金−メッキ処理などの加工工程を経てTA
Bテープ(パターンテープ)に加工される。図1にパタ
ーンテープの形状を示す。図2に本発明の半導体装置の
一態様の断面図を示す。パターンテープのインナーリー
ド部6を、半導体集積回路8の金バンプ10に熱圧着
(インナーリードボンディング)し、半導体集積回路を
搭載する。次いで、封止樹脂9による樹脂封止工程を経
て半導体装置が作成される。このような半導体装置をテ
ープキャリアパッケージ(TCP)型半導体装置と称す
る。TCP型半導体装置は、他の部品を搭載した回路基
板等とアウターリード7を介して接続(アウターリード
ボンディング)され、電子機器への実装がなされる。
[0003] TAB tapes include sprockets and device holes, thermal lamination with copper foil, pattern formation (resist coating, etching, resist removal),
TA through processing process such as tin or gold-plating
Processed into B tape (pattern tape). FIG. 1 shows the shape of the pattern tape. FIG. 2 is a cross-sectional view of one embodiment of the semiconductor device of the present invention. The inner lead portion 6 of the pattern tape is thermocompression-bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 to mount the semiconductor integrated circuit. Next, a semiconductor device is created through a resin sealing process using the sealing resin 9. Such a semiconductor device is called a tape carrier package (TCP) type semiconductor device. The TCP type semiconductor device is connected (outer lead bonding) to a circuit board or the like on which other components are mounted via outer leads 7 and mounted on an electronic device.

【0004】最終的にTAB用テープの接着剤層は、パ
ッケージ内に残留するため、絶縁性、耐熱性、接着性が
要求される。近年電子機器の小型化、高密度化が進行す
るに伴い、TAB方式における導体幅が非常に狭くなっ
てきており、高い接着強度および絶縁性を有する接着剤
の必要性が高まっている。また、最近は特に、絶縁信頼
性の加速試験として、125℃〜150℃の高温で連続
した電圧印加状態における絶縁の低下速度が重要視され
るようになった。
Finally, since the adhesive layer of the TAB tape remains in the package, it is required to have insulation, heat resistance and adhesiveness. In recent years, as electronic devices have been miniaturized and densified, the conductor width in the TAB method has become extremely narrow, and the need for an adhesive having high adhesive strength and insulating properties has increased. In addition, in recent years, particularly as an insulation reliability acceleration test, the reduction rate of insulation under a continuous voltage application state at a high temperature of 125 ° C. to 150 ° C. has become important.

【0005】このような観点から、従来のTAB用テー
プの接着剤層にはエポキシ樹脂および/またはフェノー
ル樹脂とポリアミド樹脂の混合組成物が主として用いら
れてきた。(特開平2−143447号公報、特開平3
−217035号公報等)。
From such a viewpoint, a mixed composition of an epoxy resin and / or a phenol resin and a polyamide resin has been mainly used for the adhesive layer of the conventional TAB tape. (JP-A-2-143447, JP-A-3
-217035).

【0006】[0006]

【発明が解決しようとする課題】しかし、上述の接着性
および絶縁性において、従来のTAB用テープは必ずし
も十分とはいえない。たとえば、導体幅が細くなるに従
い、接着強度が低下し、ボンディング等の後工程で導体
の剥離を生じ、集積回路、回路基板と接続できないこと
がある。これは接着強度の絶対値の不足と、導体と接着
剤の間へのメッキ液の侵入による実効の接着面積の減少
が主な原因である。また、高温での連続した電圧印加状
態における絶縁低下が遅いので、今後実装密度が増加
し、導体間距離が短くなると絶縁耐久性の点で不安があ
る。
However, conventional TAB tapes are not always satisfactory in the above-mentioned adhesiveness and insulating properties. For example, as the conductor width becomes narrower, the adhesive strength decreases, the conductor may peel off in a later step such as bonding, and it may not be possible to connect to an integrated circuit or a circuit board. This is mainly due to a shortage of the absolute value of the adhesive strength and a decrease in the effective adhesive area due to the penetration of the plating solution between the conductor and the adhesive. In addition, since the insulation deterioration is slow under the continuous voltage application condition at high temperature, if the mounting density increases and the distance between the conductors decreases in the future, there is concern about the insulation durability.

【0007】本発明はこのような問題点を解決し、接着
性および絶縁性に優れた新規なTAB用テープおよびそ
れを用いた半導体装置を提供することを目的とする。
It is an object of the present invention to solve the above problems and provide a novel TAB tape having excellent adhesiveness and insulation and a semiconductor device using the same.

【0008】[0008]

【課題を解決するための手段】本発明者らは、上記の目
的を達成するためにTAB用テープの接着剤成分の化学
構造と金属に対する接着性および絶縁性との関係を鋭意
検討した結果、有機金属化合物とポリアミド樹脂とを巧
みに組み合わせることにより、接着性および絶縁性に優
れたTAB用テープが得られることを見い出し、本発明
に至ったものである。
Means for Solving the Problems In order to achieve the above-mentioned object, the present inventors have made earnest studies on the relationship between the chemical structure of the adhesive component of the TAB tape and the adhesiveness and insulating property to metal. It was found that a TAB tape having excellent adhesiveness and insulating properties can be obtained by skillfully combining an organometallic compound and a polyamide resin, and the present invention has been completed.

【0009】すなわち、本発明は可撓性を有する絶縁性
フィルム上に、接着剤層および保護フィルム層を有する
積層体より構成され、該接着剤層が、ポリアミド樹脂お
よび下記(1)〜(2)から選択される少なくとも1種
以上の有機金属化合物を必須成分として含むことを特徴
とするTAB用接着剤付きテープおよびそれを用いた半
導体装置である。 (1)次の一般式(I)で示される有機金属化合物 M(O−R)n(O−CO−R)m ……(I) (ただし、Mは金属元素、n,mは自然数、R,R
は置換または非置換の一価炭化水素基を表わす。) (2)前記(1)の有機金属化合物とキレート剤から構
成される金属キレート化合物。
That is, the present invention comprises a laminate having an adhesive layer and a protective film layer on a flexible insulating film, the adhesive layer comprising a polyamide resin and the following (1) to (2). (1) An adhesive tape for TAB, which comprises at least one or more organometallic compounds selected from the above as an essential component, and a semiconductor device using the same. (1) Organometallic compound represented by the following general formula (I) M (O-R 1 ) n (O-CO-R 2 ) m (I) (where M is a metal element and n and m are Natural number, R 1 , R 2
Represents a substituted or unsubstituted monovalent hydrocarbon group. (2) A metal chelate compound composed of the organometallic compound of (1) and a chelating agent.

【0010】[0010]

【発明の実施の形態】本発明で使用される有機金属化合
物を構成する金属元素は、好ましくはMg,Al,S
i,Ti,Zr,Fe,Co,Cr,Mn,Ni,P
d,Rh,V,Znから選ばれる1種以上のものであ
る。
BEST MODE FOR CARRYING OUT THE INVENTION The metal elements constituting the organometallic compound used in the present invention are preferably Mg, Al and S.
i, Ti, Zr, Fe, Co, Cr, Mn, Ni, P
It is one or more selected from d, Rh, V and Zn.

【0011】上記一般式(I)に示される有機金属化合
物の有機基RおよびRとしては、置換または非置換
の一価炭化水素基であれば特に限定されないが、たとえ
ばメチル基、エチル基、n−およびi−プロピル基、n
−ブチル基、n−アミル基、ステアリル基等のアルキル
基、フェニル基、あるいはこれらの基の水素原子が一部
ハロゲン元素で置換されたものが挙げられる。
The organic groups R 1 and R 2 of the organometallic compound represented by the above general formula (I) are not particularly limited as long as they are substituted or unsubstituted monovalent hydrocarbon groups, and examples thereof include a methyl group and an ethyl group. , N- and i-propyl groups, n
-Butyl group, n-amyl group, stearyl group, and other alkyl groups, phenyl group, or those groups in which some of the hydrogen atoms are replaced with halogen elements.

【0012】上記一般式(I)に示される有機金属化合
物とキレート剤から構成される金属キレート化合物を、
構成するキレート剤としては、アセチルアセトン、トリ
フルオロアセチルアセトン、ペンタフルオロアセチルア
セトン、エチルアセトアセテート、サリチルアルデヒ
ド、ジエチルマロネート、トリエタノールアミン等が挙
げられる。
A metal chelate compound composed of an organometallic compound represented by the general formula (I) and a chelating agent is
Examples of the chelating agent that can be used include acetylacetone, trifluoroacetylacetone, pentafluoroacetylacetone, ethylacetoacetate, salicylaldehyde, diethyl malonate, triethanolamine, and the like.

【0013】また、本発明における有機金属化合物は上
記の金属元素および有機基が1種以上含まれたものであ
ってもよい。
The organometallic compound in the present invention may contain one or more of the above metal elements and organic groups.

【0014】また、本発明における有機金属化合物とキ
レート剤から構成される金属キレート化合物は通常は有
機金属化合物とキレートを反応させて得られる。
The metal chelate compound composed of the organometallic compound and the chelating agent in the present invention is usually obtained by reacting an organometallic compound with a chelate.

【0015】本発明で使用されるポリアミド樹脂は、公
知の種々のものが使用できる。特に、接着剤層に可撓性
を持たせ、かつ低吸水率のため絶縁性にすぐれる、炭素
数が36であるジカルボン酸(いわゆるダイマー酸)を
含むものが好適である。ダイマー酸を含むポリアミド樹
脂は、常法によるダイマー酸とジアミンの重縮合により
得られるが、この際にダイマー酸以外のアジピン酸、ア
ゼライン酸、セバシン酸等のジカルボン酸を共重合成分
として含有してもよい。ジアミンはエチレンジアミン、
ヘキサメチレンジアミン、ピペラジン、等の公知のもの
が使用でき、吸湿性、溶解性の点から2種以上の混合で
もよい。
Various well-known polyamide resins can be used in the present invention. In particular, those containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid), which has flexibility in the adhesive layer and has excellent insulating property due to low water absorption, are preferable. Polyamide resin containing dimer acid is obtained by polycondensation of dimer acid and diamine by a conventional method, at this time adipic acid other than dimer acid, azelaic acid, containing dicarboxylic acid such as sebacic acid as a copolymerization component. Good. Diamine is ethylenediamine,
Known materials such as hexamethylenediamine and piperazine can be used, and two or more kinds may be mixed in view of hygroscopicity and solubility.

【0016】上記の有機金属化合物とポリアミド樹脂と
の配合割合は、通常ポリアミド樹脂100重量部に対し
て有機金属化合物0.05〜20.0重量部、好ましく
は0.5〜10.0重量部である。有機金属化合物が
0.05重量部未満では接着性および絶縁性が十分でな
い。また、20.0重量部を越えると接着性が低下する
ので好ましくない。
The mixing ratio of the organometallic compound to the polyamide resin is usually 0.05 to 20.0 parts by weight, preferably 0.5 to 10.0 parts by weight, based on 100 parts by weight of the polyamide resin. Is. If the amount of the organometallic compound is less than 0.05 parts by weight, the adhesiveness and insulating property will be insufficient. Further, when it exceeds 20.0 parts by weight, the adhesiveness is deteriorated, which is not preferable.

【0017】本発明において、接着剤層に公知のエポキ
シ樹脂を添加することにより、一層接着性および絶縁性
を向上させることができる。エポキシ樹脂は1分子内に
2個以上のエポキシ基を有するものであれば特に制限さ
れないが、ビスフェノールF、ビスフェノールA、ビス
フェノールS、ジヒドロキシナフタレン等のジグリシジ
ルエーテル、エポキシ化フェノールノボラック、エポキ
シ化クレゾールノボラック、エポキシ化トリスフェニロ
ールメタン、エポキシ化テトラフェニロールエタン、エ
ポキシ化メタキシレンジアミン、等が挙げられる。エポ
キシ樹脂の添加量はポリアミド樹脂100重量部に対し
て5〜100重量部、好ましくは20〜70重量部であ
る。
In the present invention, by adding a known epoxy resin to the adhesive layer, the adhesiveness and insulating property can be further improved. The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but diglycidyl ethers such as bisphenol F, bisphenol A, bisphenol S, and dihydroxynaphthalene, epoxidized phenol novolac, epoxidized cresol novolac. , Epoxidized trisphenylol methane, epoxidized tetraphenylol ethane, epoxidized meta-xylene diamine, and the like. The addition amount of the epoxy resin is 5 to 100 parts by weight, preferably 20 to 70 parts by weight, based on 100 parts by weight of the polyamide resin.

【0018】さらに、接着剤層にノボラック型フェノー
ル樹脂、レゾール型フェノール樹脂等の公知のフェノー
ル樹脂を含有してもよく、絶縁性および熱変形等の耐熱
性の向上に効果がある。フェノール樹脂の添加量はポリ
アミド樹脂100重量部に対して5〜100重量部であ
ると好ましい。
Further, the adhesive layer may contain a known phenol resin such as a novolac type phenol resin or a resol type phenol resin, which is effective in improving insulation and heat resistance such as thermal deformation. The added amount of the phenol resin is preferably 5 to 100 parts by weight based on 100 parts by weight of the polyamide resin.

【0019】本発明の接着剤層にエポキシ樹脂およびフ
ェノール樹脂の硬化剤および硬化促進剤を添加すること
は何等制限されない。たとえば、芳香族ポリアミン、三
フッ化ホウ素トリエチルアミン錯体等の三フッ化ホウ素
のアミン錯体、2−アルキル−4−メチルイミダゾー
ル、2−フェニル−4−アルキルイミダゾール等のイミ
ダゾール誘導体、無水フタル酸、無水トリメリット酸等
の有機酸、ジシアンジアミド、トリフェニルフォスフィ
ン等公知のものが使用できる。添加量はポリアミド樹脂
100重量部に対して0.1〜10重量部であると好ま
しい。
Addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited in any way. For example, aromatic polyamines, amine complexes of boron trifluoride such as boron trifluoride triethylamine complex, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, phthalic anhydride, trianhydride Organic acids such as melitic acid, dicyandiamide, and known compounds such as triphenylphosphine can be used. The addition amount is preferably 0.1 to 10 parts by weight based on 100 parts by weight of the polyamide resin.

【0020】以上の成分以外に、接着剤の特性を損なわ
ない範囲で酸化防止剤、イオン捕捉剤などの有機、無機
成分を添加することは何ら制限されるものではない。
In addition to the above components, addition of organic or inorganic components such as an antioxidant and an ion scavenger is not limited to the extent that the characteristics of the adhesive are not impaired.

【0021】本発明でいう可撓性を有する絶縁性フィル
ムとはポリイミド、ポリエステル、ポリフェニレンスル
フィド、ポリエーテルスルホン、ポリエーテルエーテル
ケトン、アラミド、ポリカーボネート、ポリアリレー
ト、等のプラスチックあるいはエポキシ樹脂含浸ガラス
クロス等の複合材料からなる厚さ25〜125μのフィ
ルムであり、これらから選ばれる複数のフィルムを積層
して用いても良い。また必要に応じて、加水分解、コロ
ナ放電、低温プラズマ、物理的粗面化、易接着コーティ
ング処理等の表面処理を施すことができる。
The flexible insulating film referred to in the present invention means plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or epoxy resin-impregnated glass cloth. A film having a thickness of 25 to 125 μm, which is made of the composite material, and a plurality of films selected from these may be laminated and used. If necessary, surface treatment such as hydrolysis, corona discharge, low temperature plasma, physical surface roughening, and easy adhesion coating treatment can be applied.

【0022】本発明でいう保護フィルム層とは、銅箔を
熱ラミネートする前に接着剤面からTAB用テープの形
態を損なうことなく剥離できれば特に限定されないが、
たとえばシリコーンあるいはフッ素化合物のコーティン
グ処理を施したポリエステルフィルム、ポリオレフィン
フィルム、およびこれらをラミネートした紙が挙げられ
る。
The protective film layer referred to in the present invention is not particularly limited as long as it can be peeled off from the adhesive surface without impairing the form of the TAB tape before heat-laminating the copper foil,
For example, a polyester film or a polyolefin film coated with a silicone or fluorine compound, and a paper obtained by laminating the same.

【0023】次にTAB用接着剤付きテープの製造方法
について説明する。
Next, a method of manufacturing the adhesive tape for TAB will be described.

【0024】可撓性を有する絶縁性フィルムに、上記接
着剤組成物を溶剤に溶解した塗料を塗布、乾燥する。接
着剤層の膜厚は10〜25μとなるように塗布すること
が好ましい。乾燥条件は、100〜200℃、1〜5分
である。溶剤は特に限定されないが、トルエン、キシレ
ン、クロルベンゼン等の芳香族系とメタノール、エタノ
ール、プロパノール等のアルコール系の混合が好適であ
る。このようにして得られたフィルムに保護フィルムを
ラミネートし、最後に35〜158mm程度にスリット
する。
A coating material prepared by dissolving the above adhesive composition in a solvent is applied to a flexible insulating film and dried. It is preferable to apply the adhesive layer so that the thickness thereof is 10 to 25 μm. The drying conditions are 100 to 200 ° C. and 1 to 5 minutes. The solvent is not particularly limited, but a mixture of an aromatic solvent such as toluene, xylene and chlorobenzene and an alcohol solvent such as methanol, ethanol and propanol is preferable. A protective film is laminated on the film thus obtained, and finally slit to about 35 to 158 mm.

【0025】[0025]

【実施例】以下に実施例を挙げて本発明を説明するが、
本発明はこれらの実施例に限定されるものではない。実
施例の説明に入る前に評価方法について述べる。
The present invention will be described below with reference to examples.
The present invention is not limited to these examples. The evaluation method will be described before the description of the examples.

【0026】評価方法 (1)評価用サンプル作成方法 TAB用接着剤付きテープサンプルに18μの電解銅箔
を、140℃、1kg/cm2の条件でラミネートし
た。続いてエアオーブン中で、80℃、3時間、100
℃、5時間、150℃、5時間の順次加熱処理を行な
い、銅箔付きTAB用テープを作成した。得られた銅箔
付きTAB用テープの銅箔面に常法によりフォトレジス
ト膜形成、エッチング、レジスト剥離を行ない、接着強
度および絶縁性の評価用サンプルをそれぞれ作成した。
Evaluation method (1) Preparation method for evaluation sample A tape sample with an adhesive for TAB was laminated with an electrolytic copper foil of 18 μ under the conditions of 140 ° C. and 1 kg / cm 2. Then, in an air oven at 80 ° C for 3 hours, 100
C., 5 hours, 150.degree. C., 5 hours in order to prepare a TAB tape with copper foil. Photoresist film formation, etching, and resist peeling were performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, and samples for evaluation of adhesive strength and insulating property were prepared.

【0027】(2)スズメッキ処理 上記(1)の方法で得られたサンプルを、ホウフッ酸系
の無電解スズメッキ液に70℃、5分浸漬処理し、0.
5μ厚のメッキを施した。
(2) Tin Plating Treatment The sample obtained by the method of (1) above was immersed in a borofluoric acid-based electroless tin plating solution at 70 ° C. for 5 minutes, and then subjected to a 0.
5 μm thick plating was applied.

【0028】(3)剥離強度 上記(1)および(2)の方法で得た導体幅50μの評
価用サンプルを用いて、導体を90°方向に50mm/
min の速度で剥離し、その際の剥離力を測定した。
(3) Peel strength Using the evaluation sample having a conductor width of 50 μ obtained by the above methods (1) and (2), the conductor was 50 mm / 90 mm in the direction.
The film was peeled at a speed of min and the peeling force at that time was measured.

【0029】(4)絶縁性 上記(1)および(2)の方法で得た導体幅200μ、
導体間距離50μのくし型形状の評価用サンプルを用い
て、エアオーブン中で150℃,100Vの電圧を連続
的に印加した状態において、抵抗値が初期値の1/10
以下となる時間を測定した。
(4) Insulating property Conductor width 200 μ obtained by the above method (1) and (2),
Using a comb-shaped evaluation sample having a conductor-to-conductor distance of 50 μ, the resistance value was 1/10 of the initial value in a state in which a voltage of 150 ° C. and 100 V was continuously applied in an air oven.
The following times were measured.

【0030】比較例(ポリアミド樹脂の合成) 酸/アミン比を1.1〜0.9の範囲で表1に示すよう
に変えて、酸/アミン反応物、消泡剤および1%以下の
リン酸触媒を加え、反応体を調製した。この反応体を、
140℃,1時間撹拌加熱後、205℃まで昇温し、約
1.5時間撹拌した。約15mmHgの真空下で、0.
5時間保持し、温度を低下させた。最後に、酸化防止剤
を添加し、ポリアミド樹脂を取り出した。
Comparative Example (Synthesis of Polyamide Resin) The acid / amine ratio was changed in the range of 1.1 to 0.9 as shown in Table 1, and the acid / amine reactant, antifoaming agent and phosphorus of 1% or less were used. An acid catalyst was added to prepare a reactant. This reactant
After stirring and heating at 140 ° C. for 1 hour, the temperature was raised to 205 ° C. and the mixture was stirred for about 1.5 hours. Under vacuum of about 15 mmHg,
Hold for 5 hours to reduce temperature. Finally, an antioxidant was added and the polyamide resin was taken out.

【0031】実施例1 参考例で得た表1に示したポリアミド樹脂A(酸価3
9.5)、エポキシ樹脂(油化シェルエポキシ(株)
製、“エピコート”828、エポキシ当量186)、フ
ェノール樹脂(昭和高分子(株)製、CKM128
2)、表2に示した有機金属化合物Aをそれぞれ表3の
組成比となるように配合し、濃度20重量%となるよう
にメタノール/モノクロルベンゼン混合溶媒に30℃で
撹拌、混合して接着剤溶液を作成した。この接着剤をバ
ーコータで、厚さ25μのポリエチレンテレフタレート
フィルム(東レ(株)製”ルミラー”)に約18μの乾
燥厚さとなるように塗布し,100℃、1分および16
0℃で5分間の乾燥を行ない、接着剤シートを作成し
た。さらに、得られた接着剤シートを厚さ75μのポリ
イミドフィルム(宇部興産(株)製“ユーピレックス”
75S)に120℃、1kg/cm2 の条件でラミネー
トしてTAB用接着剤付きテープを作成した。特性を表
3に示す。
Example 1 Polyamide resin A shown in Table 1 (acid value 3
9.5), epoxy resin (Okaka Shell Epoxy Co., Ltd.)
"Epicoat" 828, epoxy equivalent 186), phenol resin (Showa Polymer Co., Ltd., CKM128)
2), the organometallic compounds A shown in Table 2 were blended so as to have the composition ratios shown in Table 3, respectively, and the mixture was stirred and mixed at 30 ° C. in a methanol / monochlorobenzene mixed solvent so as to have a concentration of 20% by weight and bonded. An agent solution was prepared. This adhesive was applied with a bar coater to a polyethylene terephthalate film (“Lumirror” manufactured by Toray Industries, Inc.) having a thickness of 25 μm so that the dry thickness was about 18 μm, and the temperature was 100 ° C. for 1 minute and 16
An adhesive sheet was prepared by drying at 0 ° C for 5 minutes. Furthermore, the obtained adhesive sheet was formed into a polyimide film having a thickness of 75 μ (“UPILEX” manufactured by Ube Industries, Ltd.).
75S) was laminated under the conditions of 120 ° C. and 1 kg / cm 2 to prepare an adhesive tape for TAB. Table 3 shows the characteristics.

【0032】上記の手順で得られたTAB用接着剤付き
テープを用いて、前述の評価方法(1)および(2)と
同一の方法で半導体集積回路接続用の導体回路を形成
し、図1に示すパターンテープを得た。
Using the TAB adhesive tape obtained by the above procedure, a conductor circuit for connecting a semiconductor integrated circuit was formed in the same manner as in the above evaluation methods (1) and (2). Was obtained.

【0033】さらにこのパターンテープを用いて、45
0℃,1分の条件でインナーリードボンディングを行な
い、半導体集積回路を接続した。しかるのちに、エポキ
シ系液状封止剤(北陸塗料(株)製“チップコート”1
320−617)で樹脂封止を行ない、半導体装置を得
た。図2は得られた半導体装置の断面を示したものであ
る。
Further, using this pattern tape, 45
Inner lead bonding was performed at 0 ° C. for 1 minute to connect a semiconductor integrated circuit. After that, an epoxy-based liquid sealant ("Hitariku Paint Co., Ltd." Chipcoat "1
320-617), resin sealing was performed to obtain a semiconductor device. FIG. 2 shows a cross section of the obtained semiconductor device.

【0034】実施例2〜4および比較例1 実施例1と同様の方法で、それぞれ表1〜3に示した原
料および組成比で調合した接着剤を用いてTAB用接着
剤付きテープを得た。特性を表3に示す。
Examples 2 to 4 and Comparative Example 1 In the same manner as in Example 1, tapes with an adhesive for TAB were obtained by using the adhesives prepared with the raw materials and the composition ratios shown in Tables 1 to 3, respectively. . Table 3 shows the characteristics.

【0035】[0035]

【表1】 [Table 1]

【0036】[0036]

【表2】 [Table 2]

【0037】[0037]

【表3】 [Table 3]

【0038】表3の実施例および比較例から本発明によ
り得られるTAB用接着剤付きテープは、接着性および
絶縁性に優れることがわかる。
From the examples and comparative examples in Table 3, it can be seen that the tapes with an adhesive for TAB obtained according to the present invention are excellent in adhesiveness and insulation.

【0039】[0039]

【発明の効果】本発明は接着性および絶縁性に優れた新
規なTAB用接着剤付きテープおよびそれを用いた半導
体装置を工業的に提供するものであり、本発明のTAB
用接着剤付きテープによって高密度実装用の半導体装置
の信頼性および経済性を向上させることができる。
The present invention is to industrially provide a novel TAB adhesive tape having excellent adhesiveness and insulating properties and a semiconductor device using the same.
The reliability and economy of the semiconductor device for high-density mounting can be improved by the adhesive tape.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のTAB用接着剤付きテープを加工して
得られた、半導体集積回路搭載前のパターンテープの一
態様の斜視図。
FIG. 1 is a perspective view of one embodiment of a pattern tape before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for TAB of the present invention.

【図2】本発明のTAB用接着剤付きテープを用いた半
導体装置の一態様の断面図。
FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device using the tape with an adhesive for TAB of the present invention.

【符号の説明】[Explanation of symbols]

1 可撓性を有する絶縁性フィルム 2 接着剤 3 スプロケット孔 4 デバイス孔 5 半導体集積回路接続用の導体 6 インナーリード部 7 アウターリード部 8 半導体集積回路 9 封止樹脂 10金バンプ 11保護膜 1 Flexible Insulating Film 2 Adhesive 3 Sprocket Hole 4 Device Hole 5 Conductor for Connecting Semiconductor Integrated Circuit 6 Inner Lead Part 7 Outer Lead Part 8 Semiconductor Integrated Circuit 9 Sealing Resin 10 Gold Bump 11 Protective Film

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】可撓性を有する有機絶縁性フィルム上に、
接着剤層および保護フィルム層を有する積層体より構成
され、該接着剤層が、ポリアミド樹脂および下記(1)
〜(2)から選択される少なくとも1種以上の有機金属
化合物を必須成分として含むことを特徴とするTAB用
接着剤付きテープ。 (1)次の一般式(I)で示される有機金属化合物 M(O−R)n(O−CO−R)m ……(I) (ただし、Mは金属元素、n,mは自然数、R,R
は置換または非置換の一価炭化水素基を表わす。) (2)前記(1)の有機金属化合物とキレート剤から構
成される金属キレート化合物。
1. An organic insulating film having flexibility,
It is composed of a laminate having an adhesive layer and a protective film layer, and the adhesive layer comprises a polyamide resin and the following (1):
A tape with an adhesive for TAB, which contains at least one or more organometallic compounds selected from (2) as an essential component. (1) Organometallic compound represented by the following general formula (I) M (O-R 1 ) n (O-CO-R 2 ) m (I) (where M is a metal element and n and m are Natural number, R 1 , R 2
Represents a substituted or unsubstituted monovalent hydrocarbon group. (2) A metal chelate compound composed of the organometallic compound of (1) and a chelating agent.
【請求項2】接着剤層がエポキシ樹脂を含有することを
特徴とする請求項1記載のTAB用接着剤付きテープ。
2. The adhesive tape for TAB according to claim 1, wherein the adhesive layer contains an epoxy resin.
【請求項3】有機金属化合物が、Mg,Al,Si,T
i,Zr,Fe,Co,Cr,Mn,Ni,Pd,R
h,V,Znから選ばれる1種以上の金属元素から構成
されることを特徴とする請求項1記載のTAB用接着剤
付きテープ。
3. The organometallic compound is Mg, Al, Si, T
i, Zr, Fe, Co, Cr, Mn, Ni, Pd, R
The tape with an adhesive for TAB according to claim 1, which is composed of one or more metal elements selected from h, V, and Zn.
【請求項4】有機金属化合物の含有量が、ポリアミド樹
脂100重量部に対し、0.05〜20重量部であるこ
とを特徴とする請求項1記載のTAB用接着剤付きテー
プ。
4. The adhesive tape for TAB according to claim 1, wherein the content of the organometallic compound is 0.05 to 20 parts by weight with respect to 100 parts by weight of the polyamide resin.
【請求項5】ポリアミド樹脂が炭素数36のジカルボン
酸を必須成分として含むことを特徴とする請求項1記載
のTAB用接着剤付きテープ。
5. The adhesive tape for TAB according to claim 1, wherein the polyamide resin contains a dicarboxylic acid having 36 carbon atoms as an essential component.
【請求項6】接着剤層がフェノール樹脂を含有すること
を特徴とする請求項1記載のTAB用接着剤付きテー
プ。
6. The adhesive tape for TAB according to claim 1, wherein the adhesive layer contains a phenol resin.
【請求項7】請求項1〜6記載のTAB用接着剤付きテ
ープを用いた半導体装置。
7. A semiconductor device using the tape with an adhesive for TAB according to claim 1.
JP7212055A 1995-08-21 1995-08-21 Tape with adhesive for tab and semiconductor device Pending JPH0964111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7212055A JPH0964111A (en) 1995-08-21 1995-08-21 Tape with adhesive for tab and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7212055A JPH0964111A (en) 1995-08-21 1995-08-21 Tape with adhesive for tab and semiconductor device

Publications (1)

Publication Number Publication Date
JPH0964111A true JPH0964111A (en) 1997-03-07

Family

ID=16616124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7212055A Pending JPH0964111A (en) 1995-08-21 1995-08-21 Tape with adhesive for tab and semiconductor device

Country Status (1)

Country Link
JP (1) JPH0964111A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6517662B2 (en) 1997-04-22 2003-02-11 International Business Machines Corporation Process for making semiconductor chip assembly
JP2017031301A (en) * 2015-07-31 2017-02-09 東洋インキScホールディングス株式会社 Thermosetting adhesive sheet and application thereof
KR20180090739A (en) 2017-02-03 2018-08-13 토요잉크Sc홀딩스주식회사 Printed wiring board with protective sheet, thermosetting adhesive sheet with sheet-like substrate, manufacturing methods thereof and thermosetting adhesive sheet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6517662B2 (en) 1997-04-22 2003-02-11 International Business Machines Corporation Process for making semiconductor chip assembly
JP2017031301A (en) * 2015-07-31 2017-02-09 東洋インキScホールディングス株式会社 Thermosetting adhesive sheet and application thereof
KR20180090739A (en) 2017-02-03 2018-08-13 토요잉크Sc홀딩스주식회사 Printed wiring board with protective sheet, thermosetting adhesive sheet with sheet-like substrate, manufacturing methods thereof and thermosetting adhesive sheet

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