JP3596237B2 - Tape with adhesive for TAB, semiconductor connection substrate, and semiconductor device - Google Patents

Description

（ただし、Ｒ３〜Ｒ１０は、同一でも異なっていてもよく、水素原子、Ｃ１〜Ｃ４の低級アルキル基またはハロゲン原子を示す。）
【化７】

（ただし、Ｒ１１〜Ｒ１８のうち２つは２，３−エポキシプロポキシ基であり、残りは、同一でも異なっていてもよく、水素原子、Ｃ１〜Ｃ４の低級アルキル基またはハロゲン原子を示す。）
【化８】

（ただし、Ｒ１９〜Ｒ２２は、同一でも異なっていてもよく、水素原子、Ｃ１〜Ｃ４の低級アルキル基またはハロゲン原子を示す。）
【化９】

（ただし、Ｒ２３〜Ｒ２４は、同一でも異なっていてもよく、水素原子、Ｃ１〜Ｃ４の低級アルキル基またはハロゲン原子を示す。）
線状脂肪族エポキシ樹脂、脂環式エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂およびハロゲン化エポキシ樹脂などが挙げられる。
【００１８】
これらのエポキシ樹脂（Ｂ）の中で特に本発明において好ましく使用されるものは、耐薬品性、絶縁性が優れる点で、上記式（ＩＩ）、（ＩＩＩ）、（ＩＶ）または（Ｖ）で表されるエポキシ樹脂のうち少なくとも１種類を必須成分として含有するものである。
【００１９】
そして、エポキシ樹脂（Ｂ）は、上記式（ＩＩ）、（ＩＩＩ）、（ＩＶ）または（Ｖ）で表される骨格を有するエポキシ樹脂の少なくとも１つを２０重量％以上、特に５０重量％以上含有することが好ましい。
【００２０】
上記式（ＩＩ）において、Ｒ３〜Ｒ１０の好ましい具体例としては、水素原子、メチル基、エチル基、ｓｅｃ−ブチル基、ｔ−ブチル基、塩素原子、臭素原子などが挙げられる上記式（ＩＩ）で表されるエポキシ樹脂の好ましい具体例としては、４，４’ービス（２，３−エポキシプロポキシ）ビフェニル、４，４’−ビス（２，３−エポキシプロポキシ）−３，３’，５，５’−テトラメチルビフェニル、４，４’−ビス（２，３−エポキシプロポキシ）−３，３’，５，５’−テトラメチル−２−クロロビフェニル、４，４’−ビス（２，３−エポキシプロポキシ）−３，３’，５，５’−テトラメチル−２−ブロモビフェニル、４，４’−ビス（２，３−エポキシプロポキシ）−３，３’，５，５’−テトラエチルビフェニル、４，４’−ビス（２，３−エポキシプロポキシ）−３，３’，５，５’−テトラブチルビフェニルなどが挙げられる。
【００２１】
上記式（ＩＩＩ）で表されるエポキシ樹脂の好ましい具体例としては、１，５−ビス（２，３−エポキシプロポキシ）ナフタレン、１，５−ビス（２，３−エポキシプロポキシ）−７−メチルナフタレン、１，６−（２，３−エポキシプロポキシ）−２−メチルナフタレン、１，６−（２，３−エポキシプロポキシ）−８−メチルナフタレン、１，６−（２，３−エポキシプロポキシ）−４，８−ジメチルナフタレン、１，６−（２，３−エポキシプロポキシ）−２−ブロモナフタレン、１，６−（２，３−エポキシプロポキシ）−８−ブロモナフタレンなどが挙げられる。
【００２２】
上記式（ＩＶ）で表されるエポキシ樹脂の好ましい具体例としては、ＥＸＡ−７２００（大日本インキ化学工業（株）製）、ＺＸ−１２５７（東都化成（株）製）などが挙げられる。
【００２３】
上記式（Ｖ）において、Ｒ２３〜Ｒ２４の好ましい具体例としては、水素原子、メチル基、エチル基、ｓｅｃ−ブチル基、ｔ−ブチル基、塩素原子、臭素原子などが挙げられる。上記式（Ｖ）で表されるエポキシ樹脂の好ましい具体例としては、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、臭素化ビスフェノールＡ型エポキシ樹脂、臭素化ビスフェノールＦ型エポキシ樹脂などが挙げられる。
【００２４】
本発明におけるエポキシ樹脂（Ｂ）の配合量は、ポリアミド樹脂１００重量部に対して２〜１００重量部、好ましくは５〜７０重量部である。
【００２５】
本発明におけるシリカ粉末（Ｃ）は、結晶性、形状等特に限定されないが、平均粒径１０μｍ以下、最大粒径２０μｍ以下であることが好ましい。より好ましくは絶縁性、接着性、加工性の点で平均粒径２μｍ以下、最大粒径１０μｍである。本発明におけるシリカ粉末（Ｃ）としては、結晶性、形状等特に限定されないが、なかでも熱膨張係数の低下効果が大きく、低応力化に有効な溶融シリカ（ｃ´）が好ましく用いられる。ここでいう溶融シリカとは、真比重２．３以下の非晶性シリカを意味し、この溶融シリカの製造は必ずしも溶融状態を経る必要はなく、任意の製造方法を用いることができる。例えば結晶性シリカを溶融する方法および各種原料から合成する方法などが挙げられる。本発明においては、さらには溶融シリカ（ｃ´）が球状溶融シリカ（ｃ”）であることが好ましい。
【００２６】
シリカ粉末（Ｃ）の配合割合は、得られる接着剤の絶縁性、低応力性を考慮して、接着剤層全体の５〜７０重量％、さらには１０〜５０重量％が好ましい。
【００２７】
本発明のシリカ粉末（Ｃ）はその表面を予めシランカップリング剤（Ｄ）で処理することが好ましい。
【００２８】
本発明で使用するシランカップリング剤（Ｄ）としては、アルコキシル基、ハロゲン原子などの加水分解性基および有機基がケイ素原子に直結したもの、およびその部分加水分解縮合物が一般に用いられる。加水分解性基としてはアルコキシ基、なかでも、メトキシ基、エトキシ基が好ましく用いられる。有機基としては、炭化水素基や窒素原子、酸素原子、ハロゲン原子、硫黄原子などによって置換された炭化水素基のものが使用される。なかでも、下記式（Ｉ）で表されるシランカップリング剤（ｄ）が好ましい。
【００２９】
【化１０】

（Ｘは、水素原子、フェニル基、グリシジル基、アミノ基、ビニル基、アクリロイル基またはメルカプト基を示し、Ｒ^１ 、Ｒ^２ は同一でも異なっていてもよく炭素数１〜４のアルキル基を示す。また、ｎは１以上の整数を、ｍは０〜３の整数を示す。）
上記式（Ｉ）で表されるシランカップリング剤（ｄ）の好ましい具体例としては、Ｎ−β−（アミノエチル）−γ−アミノプロピルトリメトキシシラン、Ｎ−β−（アミノエチル）−γ−アミノプロピルトリエチルシラン、Ｎ−β−（アミノエチル）−γ−アミノプロピルエチルジメトキシシラン、Ｎ−β−（アミノエチル）−γ−アミノプロピルエチルジエトキシシラン、γ−アミノプロピルトリメトキシシラン、γ−アミノプロピルトリエトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルマチルジメトキシシラン、γ−（２，３−エポキシシクロヘキシル）プロピルトリメトキシシラン、γ−Ｎ−フェニルアミノプロピルトリメトキシシラン、γ−Ｎ−フェニルアミノプロピルメチルジメトキシシラン、γ−Ｎ−メチルアミノプロピルトリメトキシシラン、γ−Ｎ−メチルアミノプロピルメチルジメトキシシラン、γ−Ｎエチルアミノプロピルトリメトキシシラン、γ−Ｎ−エチルアミノプロピルメチルジメトキシシラン、γ−メタクリロイロキシプロピルトリメトキシシラン、γ−メタクリロイロキシプロピルメチルジメトキシシラン、γ−メルカプトプロピルトリメトキシシラン、γ−メルカプトプロピルメチルジメトキシシランなどが挙げられる。これらのなかでも、絶縁性、接着性の点から、Ｎ−フェニルアミノプロピルトリメトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−アミノプロピルトリメトキシシランが好ましい。
【００３０】
これらのシランカップリング剤（ｄ）は単独でも、２種類以上を併用してもよく、その添加量は、シリカ粉末（Ｃ）１００重量部に対して０．５〜１０重量部である。
【００３１】
本発明でいう保護フィルム層は、銅箔をラミネートする前に接着剤面からＴＡＢ用テープの形態を損なうことなく剥離できれば特に限定されないが、たとえばシリコーンあるいはフッ素化合物コーティング処理したポリエステルフィルム、ポリオレフィンフィルムおよびこれらをラミネートした紙などが挙げられる。
【００３２】
本発明において、接着剤層にフェノール樹脂（Ｅ）を添加することにより、一層の接着性および絶縁性を向上させることができる。フェノール樹脂（Ｅ）の具体例としては、たとえばフェノールノボラック樹脂、クレゾールノボラック樹脂、ビスフェノールＡ型樹脂や各種レゾール樹脂などが挙げられる。
【００３３】
フェノール樹脂の配合割合は、通常エポキシ樹脂１当量に対してフェノール性水酸基０．５〜１０．０当量、好ましくは０．７〜７．０当量となる範囲であることが望ましい。
【００３４】
本発明の接着剤層にエポキシ樹脂（Ｂ）の単独反応、エポキシ樹脂（Ｂ）とポリアミド樹脂（Ａ）やフェノール樹脂（Ｅ）との反応を促進させる硬化促進剤を含有することができる。硬化促進剤は硬化反応を促進するものならば特に限定されず、その具体例としては、たとえば、２−メチルイミダゾール、２，４−ジメチルイミダゾール、２−エチル−４−メチルイミダゾール、２−フェニルイミダゾール、２−フェニル−４−メチルイミダゾールおよび２−ヘプタデシルイミダゾールなどのイミダゾール化合物、トリエチルアミン、ベンジルジメチルアミン、α−メチルベンジルジメチルアミン、２−（ジメチルアミノメチル）フェノール、２，４，６−トリス（ジメチルアミノメチル）フェノールおよび１，８−ジアザビシクロ（５，４，０）ウンデセン−７などの３級アミン化合物、ジルコニウムテトラメトキシド、ジルコニウムテトラプロポキシド、テトラキス（アセチルアセトナト）ジルコニウムおよびトリ（アセチルアセトナト）アルミニウムなどの有機金属化合物、およびトリフェニルホスフィン、トリメチルホスフィン、トリエチルホスフィン、トリブチルホスフィン、トリ（ｐ−メチルフェニル）ホスフィンおよびトリ（ノニルフェニル）ホスフィンなどの有機ホスフィン化合物が挙げられる。
【００３５】
なお、これらの硬化促進剤は、用途によって２種類以上を併用してもよく、その添加量は、エポキシ樹脂（Ｂ）１００重量部に対して０．１〜１０重量部の範囲が好ましい。
【００３６】
次に、ＴＡＢ用接着剤付きテープの製造方法について説明する。可撓性を有する有機絶縁フィルムに、接着剤組成物を溶剤に溶解した塗料を塗布、乾燥する。接着剤層の膜圧は１０〜２５μｍとなるように塗布することが好ましい。乾燥条件は、通常１００〜２００℃、１〜５分である。溶剤は特に限定されないが、トルエン、キシレン、クロルベンゼン等の芳香族系とメタノール、エタノール、プロパノール等のアルコール系の混合溶媒が好適である。このようにして得られたフィルムに保護フィルムをラミネートし、最後に３５〜１５８ｍｍ程度にスリットする。
【００３７】
かくして得られた本発明のＴＡＢ用接着剤付きテープから、例えば実施例に示すように半導体装置を製造でき、また半導体用インターポーザーを製造できる。
【００３８】
【実施例】
以下、実施例により本発明をさらに具体的に説明する。
【００３９】
実施例１〜３、比較例１
下記の熱可塑性樹脂、エポキシ樹脂、フェノール樹脂、シリカ粉末、シランカップリング剤およびその他添加剤を、それぞれ表１に示した組成比となるように配合し、濃度３０重量％となるようにメタノール／モノクロルベンゼン混合溶媒に４０℃で撹拌、溶解して接着剤溶液を作製した。
【００４０】
Ａ．熱可塑性樹脂：ポリアミド樹脂（酸成分：ダイマー酸、アミン成分：ヘキサメチレンジアミン、酸価１．０、アミン価２．０）
Ｂ．エポキシ樹脂：Ｉ．４，４’−ビス（２，３−エポキシプロポキシ）ー３，３’，５，５’−テトラメチルビフェニル（エポキシ当量：１９５）
ＩＩ．１，６−ビス（２，３−エポキシプロポキシ）ナフタレン（エポキシ当量：１４９）
Ｃ．シリカ粉末：平均粒径：１μｍ、最大粒径：５μｍの球状溶融シリカ
Ｄ．シランカップリング剤：
Ｉ．γーグリシドキシプロピルトリメトキシシラン
ＩＩ．Ｎーフェニルアミノプロピルトリメトキシシラン
Ｅ．フェノール樹脂：レゾールフェノール”ＣＫＭ−１２８２”（昭和高分子（株）製）
Ｆ．添加剤：２−ヘプタデシルイミダゾール。
【００４１】
これらの接着剤溶液をバーコータで、厚さ７５μｍのポリイミドフィルム（宇部興産（株）製”ユーピレックス”７５Ｓ）に約２０μｍの乾燥厚さとなるように塗布し、１００℃、１分および１６０℃で５分間の乾燥を行いＴＡＢ用接着剤付きテープを作成した。次に、これらのＴＡＢ用接着剤付きテープに１８μｍ厚の電解銅箔を１４０℃、１ＭＰａの条件でラミネートした後、エアオーブン中で、８０℃、３時間、１００℃、５時間、１５０℃、５時間の順次加熱処理を行い、銅箔付きＴＡＢ用テープを得た。得られた銅箔付きＴＡＢ用テープの銅箔面に常法によりフォトレジスト膜形成、エッチング、レジスト剥離を行い、接着強度および耐スズメッキ処理の評価用サンプルをそれぞれ作成し、次の測定方法により各接着剤の特性を評価した。結果を表１に示す。
【００４２】
評価方法
（１）スズメッキ処理：評価用サンプルを、ホウフッ酸系の無電解スズメッキ液に７０℃、５分浸漬処理し、０．５μｍ厚のメッキを施した
（２）剥離強度：導体幅５０μｍの評価用サンプルを用いて、導体を９０°方向に５０ｍｍ／ｍｉｎの速度で剥離し、常温と１５０℃での剥離力を測定した
（３）高温高湿バイアス絶縁性：導体幅２００μｍ、導体間距離５０μｍの櫛型形状の測定用パターンを用いて、１３０℃、８５％ＲＨの環境下で１００Ｖの電圧を印加し、絶縁抵抗値が初期値の１／１０以下に低下する時間を測定した。
【００４３】
【表１】

【００４４】
表１の結果から明らかなように、本発明により得られたＴＡＢテープは、耐薬品性に優れ高い接着性と耐湿絶縁性を有することが分かる。一方、シランカップリング剤を用いていない比較例１は接着性が低いばかりか耐薬品性、耐湿絶縁性においても劣っている。
【００４５】
【発明の効果】
本発明によれば、高温高湿下での絶縁性、レジスト剥離やメッキ処理後の接着性、高温での接着性および耐薬品性に優れた新規なＴＡＢ用テープおよびそれを用いた半導体装置を工業的に提供でき、本発明のＴＡＢ用接着剤付きテープを用いることによって高密度実装用の半導体装置の信頼性を向上させることができる。
【図面の簡単な説明】
【図１】本発明のＴＡＢ用接着剤付きテープを加工して得られた、半導体集積回路搭載前のパターンテープの一態様の斜視図。
【図２】本発明のＴＡＢ用接着剤付きテープを用いた半導体装置の一態様の断面図。
【図３】本発明のＴＡＢ用接着剤付きテープを用いた半導体装置（ＢＧＡ）の一態様の断面図。
【図４】本発明のＴＡＢ用接着剤付きテープを用いた半導体装置（ＣＳＰ）の一態様の断面図。
【符号の説明】
１，１２，２０ 可撓性を有する絶縁性フィルム
２，１３，２１ 接着剤
３ スプロケット孔
４ デバイス孔
５，１４，２２ 半導体集積回路接続用の導体
６ インナーリード部
７ アウターリード部
８，１５，２３ 半導体集積回路
９，１６，２４ 封止樹脂
１０，１７，２５ 金バンプ
１１ 保護膜
１８，２６ ハンダボール
１９ 補強板
２７ ソルダーレジスト[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a tape with an adhesive (hereinafter, referred to as TAB tape) used in a tape automated bonding (TAB) system, which is a mounting method of a semiconductor integrated circuit. More specifically, TAB tapes that not only have excellent insulation properties under high temperature and high humidity and adhesiveness after resist stripping and plating, but also have high adhesiveness at high temperatures and excellent mountability such as bonding Semiconductor device.
[0002]
[Prior art]
In general, a TAB tape has a three-layer structure in which a polyester film or the like having a release property is laminated as an adhesive layer and a protective film layer on a flexible organic insulating film such as a polyimide film. .
[0003]
TAB tapes include (1) perforation of sprocket and device holes, (2) thermal lamination with copper foil, (3) pattern formation (resist coating, etching, resist removal), and (4) processing such as tin or gold plating. Through a process, it is processed into a TAB tape (pattern tape). FIG. 1 shows the shape of the pattern tape. FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device. The inner lead portion 6 of the pattern tape is thermocompression-bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 to mount the semiconductor integrated circuit. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin 9. Such a semiconductor device is called a tape carrier package (TCP) type semiconductor device. The TCP type semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7 (outer lead bonding), and is mounted on an electronic device.
[0004]
On the other hand, with the miniaturization and weight reduction of electronic devices in recent years, the conventional connection terminals (outer leads) are arranged on the side surface of the package for QFP (quad flat package) and SOP for the purpose of high density mounting of the semiconductor package. Instead of (small outline package), BGA (ball grid array) and CSP (chip scale package), in which connection terminals are arranged on the back surface of the package, have been used in part. BGA and CSP are structurally most different from QFP and SOP in that the former does not necessarily require a lead frame by using a substrate called an interposer. As the interposer referred to here, one obtained by bonding a copper foil to an organic insulating film such as a glass epoxy substrate or polyimide is generally used. Therefore, the tape with an adhesive for TAB of the present invention can also be used for these semiconductor devices such as BGA and CSP, and the obtained BGA and CSP are also included in the semiconductor device of the present invention. 3 and 4 are cross-sectional views of one embodiment of the semiconductor device (BGA, CSP) of the present invention.
[0005]
In any of the above-described package forms, the adhesive layer of the TAB tape is ultimately left inside the package, and thus requires insulation, heat resistance, and adhesion.
[0006]
In recent years, due to the high density accompanying the miniaturization of electronic devices, the conductor width and the distance between pitches in the TAB tape system tend to be narrow. For this reason, adhesives have been required to have higher insulating properties, adhesive properties and chemical resistance. The chemical resistance is a characteristic required for exposure to various chemicals in the above-described many steps, and has become particularly important as the width of the conductive wire decreases. Among the many steps described above, the chemical properties to resist stripping, alkali and etching in gold plating, and acid in tin plating are particularly important.
[0007]
Further, the fineness of the conductor width and the distance between the pitches has become a major problem in mounting such as outer lead bonding. Outer lead bonding to a liquid crystal panel is generally performed by thermocompression bonding at a high temperature of 100 to 170 ° C. via an anisotropic conductive film (ACF). In this step, if the high-temperature adhesive force of the adhesive is low, there is a problem that the fine outer leads are peeled off, resulting in defective mounting.
[0008]
Various improvements in adhesives have been studied. For example, a method of adding an inorganic filler for the purpose of improving adhesive strength (Japanese Patent Laid-Open No. 5-29398), a method of using a bis-A type epoxy resin and a polyamide resin having an amine value of 3 or more for the purpose of improving chemical resistance. (JP-A-5-29399), a method of adding an epoxy resin having a siloxane structure (JP-A-5-259228), a method of adding a maleimide resin (JP-A-5-291356), and the like. For the purpose of improving insulation properties, a method of purifying the chlorine ion content of an epoxy resin to 200 ppm or less (JP-A-7-74213) has been proposed.
[0009]
[Problems to be solved by the invention]
However, although the adhesives improved by various methods have been gradually improving their effects, they have not been enough to meet the more severe demands associated with the reduction of the wiring width.
[0010]
An object of the present invention is to solve the above problems and to provide a TAB tape having excellent adhesiveness, particularly excellent adhesiveness at high temperatures, chemical resistance and insulation, and a semiconductor device using the same.
[0011]
[Means for Solving the Problems]
That is, the present invention relates to a TAB adhesive tape comprising a laminate having a flexible organic insulating film, an adhesive layer and a protective film layer, wherein the adhesive layer is a thermoplastic resin (A); The present invention relates to a tape with an adhesive for TAB, a semiconductor connection substrate, and a semiconductor device, which contain an epoxy resin (B), a silica powder (C) and a silane coupling agent (D) as essential components.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the configuration of the present invention will be described in detail.
[0013]
The flexible insulating film referred to in the present invention is, for example, a composite of a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate or an epoxy resin impregnated glass cloth. Usually, it is a film having a thickness of 25 to 125 μm made of a material, and a plurality of films selected therefrom may be laminated and used. Preferably, a polyimide film, an epoxy resin impregnated glass cloth, or the like is used. Among them, a polyimide film having a small coefficient of thermal expansion is preferably used. These films are desirably subjected to surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical surface roughening, and easy adhesion coating as required.
[0014]
The adhesive layer used in the present invention contains a thermoplastic resin (A), an epoxy resin (B), a silica powder (C) and a silane coupling agent (D) as essential components.
[0015]
The thermoplastic resin (A) in the present invention is not particularly limited as long as it gives flexibility to the adhesive layer, and specific examples thereof include polyethylene, polyester, SBR, NBR, polyamide resin, SEBS and the like. Can be Among them, a polyamide resin (a) containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) having low water absorption and excellent insulating properties as an essential component is preferable. The polyamide resin (a) containing dimer acid is obtained by polycondensation of dimer acid and diamine according to a conventional method. As the diamine, known diamines such as ethylenediamine, hexamethylenediamine, and piperazine can be used, and two or more kinds may be mixed from the viewpoint of water absorption and solubility. Furthermore, for the purpose of improving the compatibility with the epoxy resin (B) and obtaining good adhesiveness, an excess of a diamine component was added in an equivalent ratio at the time of polycondensation to leave unreacted amine at the polyamide terminal. Polyamide resin (a ') is preferred. The preferred range of the amine value is 1 or more and less than 3, and if the amine value is less than 1, the effect of improving the adhesiveness is hardly exhibited, and if it is 3 or more, the preservability of the adhesive itself is reduced.
[0016]
The term "amine value" as used herein indicates the number of mg of KOH equivalent to chlorinated acid for neutralizing basic nitrogen contained in 1 g of polyamide.
[0017]
In the present invention, the epoxy resin (B) is not particularly limited as long as it has two or more epoxy groups in one molecule, and specific examples thereof include, for example, a cresol novolak epoxy resin, a phenol novolak epoxy resin, Bisphenol A epoxy resin, bisphenol F epoxy resin, epoxy resin represented by the following general formula (II), (III), (IV) or (V);
Embedded image

(However, R3 to R10 may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)
Embedded image

(However, two of R11 to R18 are 2,3-epoxypropoxy groups, and the rest may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)
Embedded image

(However, R19 to R22 may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)
Embedded image

(However, R23 and R24 may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)
Examples thereof include a linear aliphatic epoxy resin, an alicyclic epoxy resin, a heterocyclic epoxy resin, a spiro ring-containing epoxy resin, and a halogenated epoxy resin.
[0018]
Among these epoxy resins (B), those which are particularly preferably used in the present invention are those having the above-mentioned formula (II), (III), (IV) or (V) because of their excellent chemical resistance and insulation properties. It contains at least one of the epoxy resins represented as an essential component.
[0019]
The epoxy resin (B) contains at least one of the epoxy resins having a skeleton represented by the above formula (II), (III), (IV) or (V) in an amount of 20% by weight or more, particularly 50% by weight or more. It is preferred to contain.
[0020]
In the above formula (II), preferred specific examples of R3 to R10 include a hydrogen atom, a methyl group, an ethyl group, a sec-butyl group, a t-butyl group, a chlorine atom and a bromine atom. Preferred specific examples of the epoxy resin represented by are 4,4'-bis (2,3-epoxypropoxy) biphenyl and 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5. 5′-tetramethylbiphenyl, 4,4′-bis (2,3-epoxypropoxy) -3,3 ′, 5,5′-tetramethyl-2-chlorobiphenyl, 4,4′-bis (2,3 -Epoxypropoxy) -3,3 ', 5,5'-tetramethyl-2-bromobiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3', 5,5'-tetraethylbiphenyl , 4,4'-bis (2,3- Pokishipuropokishi) -3,3 ', 5,5'-tetrabutyl biphenyl.
[0021]
Preferred specific examples of the epoxy resin represented by the above formula (III) include 1,5-bis (2,3-epoxypropoxy) naphthalene and 1,5-bis (2,3-epoxypropoxy) -7-methyl Naphthalene, 1,6- (2,3-epoxypropoxy) -2-methylnaphthalene, 1,6- (2,3-epoxypropoxy) -8-methylnaphthalene, 1,6- (2,3-epoxypropoxy) -4,8-dimethylnaphthalene, 1,6- (2,3-epoxypropoxy) -2-bromonaphthalene, 1,6- (2,3-epoxypropoxy) -8-bromonaphthalene, and the like.
[0022]
Preferable specific examples of the epoxy resin represented by the above formula (IV) include EXA-7200 (manufactured by Dainippon Ink and Chemicals, Inc.) and ZX-1257 (manufactured by Toto Kasei Co., Ltd.).
[0023]
In the above formula (V), preferred specific examples of R23 to R24 include a hydrogen atom, a methyl group, an ethyl group, a sec-butyl group, a t-butyl group, a chlorine atom, and a bromine atom. Preferred specific examples of the epoxy resin represented by the above formula (V) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, brominated bisphenol A type epoxy resin, and brominated bisphenol F type epoxy resin.
[0024]
The compounding amount of the epoxy resin (B) in the present invention is 2 to 100 parts by weight, preferably 5 to 70 parts by weight based on 100 parts by weight of the polyamide resin.
[0025]
The silica powder (C) in the present invention is not particularly limited in crystallinity, shape and the like, but preferably has an average particle diameter of 10 μm or less and a maximum particle diameter of 20 μm or less. More preferably, the average particle size is 2 μm or less, and the maximum particle size is 10 μm in terms of insulation, adhesion, and workability. The silica powder (C) in the present invention is not particularly limited in terms of crystallinity, shape and the like, but among them, fused silica (c '), which has a large effect of lowering the coefficient of thermal expansion and is effective in reducing stress, is preferably used. The fused silica as used herein means amorphous silica having a true specific gravity of 2.3 or less, and the production of this fused silica does not necessarily have to go through a molten state, and any production method can be used. For example, there are a method of melting crystalline silica and a method of synthesizing from various raw materials. In the present invention, the fused silica (c ′) is more preferably spherical fused silica (c ″).
[0026]
The mixing ratio of the silica powder (C) is preferably 5 to 70% by weight, more preferably 10 to 50% by weight of the entire adhesive layer in consideration of the insulating property and low stress property of the obtained adhesive.
[0027]
Silica powder (C) of the present invention is preferably treated in advance with a silane coupling agent (D) the surface.
[0028]
As the silane coupling agent (D) used in the present invention, those in which a hydrolyzable group such as an alkoxyl group and a halogen atom and an organic group are directly bonded to a silicon atom, and a partially hydrolyzed condensate thereof are generally used. As the hydrolyzable group, an alkoxy group, in particular, a methoxy group and an ethoxy group are preferably used. As the organic group, a hydrocarbon group or a hydrocarbon group substituted by a nitrogen atom, an oxygen atom, a halogen atom, a sulfur atom, or the like is used. Among them, a silane coupling agent (d) represented by the following formula (I) is preferable.
[0029]
Embedded image

(X represents a hydrogen atom, a phenyl group, a glycidyl group, an amino group, a vinyl group, an acryloyl group or a mercapto group, and R ¹ and R ² may be the same or different and represent an alkyl group having 1 to 4 carbon atoms. And n represents an integer of 1 or more, and m represents an integer of 0 to 3.)
Preferred specific examples of the silane coupling agent (d) represented by the above formula (I) include N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane and N-β- (aminoethyl) -γ -Aminopropyltriethylsilane, N-β- (aminoethyl) -γ-aminopropylethyldimethoxysilane, N-β- (aminoethyl) -γ-aminopropylethyldiethoxysilane, γ-aminopropyltrimethoxysilane, γ -Aminopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ- (2,3-epoxycyclohexyl) propyltrimethoxysilane, γ-N-phenylaminopropyltri Methoxysilane, γ-N-phenylaminopropylmethyldimethoxysilane, γ N-methylaminopropyltrimethoxysilane, γ-N-methylaminopropylmethyldimethoxysilane, γ-Nethylaminopropyltrimethoxysilane, γ-N-ethylaminopropylmethyldimethoxysilane, γ-methacryloyloxypropyltrimethoxysilane , Γ-methacryloyloxypropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, and the like. Among them, N-phenylaminopropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-aminopropyltrimethoxysilane are preferable from the viewpoint of insulation and adhesiveness.
[0030]
These silane coupling agents (d) may be used alone or in combination of two or more, and the amount of addition is 0.5 to 10 parts by weight based on 100 parts by weight of the silica powder (C).
[0031]
The protective film layer referred to in the present invention is not particularly limited as long as it can be peeled from the adhesive surface without damaging the form of the TAB tape before laminating the copper foil. Papers obtained by laminating these are cited.
[0032]
In the present invention, by adding the phenol resin (E) to the adhesive layer, it is possible to further improve the adhesiveness and the insulating property. Specific examples of the phenol resin (E) include, for example, a phenol novolak resin, a cresol novolak resin, a bisphenol A type resin, various resole resins, and the like.
[0033]
The compounding ratio of the phenolic resin is usually in the range of 0.5 to 10.0 equivalents, preferably 0.7 to 7.0 equivalents, of the phenolic hydroxyl group relative to 1 equivalent of the epoxy resin.
[0034]
The adhesive layer of the present invention may contain a curing accelerator that promotes a single reaction of the epoxy resin (B) or a reaction between the epoxy resin (B) and the polyamide resin (A) or the phenol resin (E). The curing accelerator is not particularly limited as long as it accelerates the curing reaction, and specific examples thereof include, for example, 2-methylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole , Imidazole compounds such as 2-phenyl-4-methylimidazole and 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol, 2,4,6-tris ( Tertiary amine compounds such as dimethylaminomethyl) phenol and 1,8-diazabicyclo (5,4,0) undecene-7, zirconium tetramethoxide, zirconium tetrapropoxide, tetrakis (acetylacetonato) zirconium and tri (A) Chiruasetonato) organometallic compounds such as aluminum, and triphenyl phosphine, trimethyl phosphine, triethyl phosphine, tributyl phosphine, an organic phosphine compound such as tri (p- methylphenyl) phosphine and tri (nonylphenyl) phosphine.
[0035]
Two or more of these curing accelerators may be used in combination depending on the application, and the amount added is preferably in the range of 0.1 to 10 parts by weight based on 100 parts by weight of the epoxy resin (B).
[0036]
Next, a method for producing a tape with an adhesive for TAB will be described. A paint obtained by dissolving the adhesive composition in a solvent is applied to a flexible organic insulating film and dried. It is preferable to apply the adhesive so that the film thickness of the adhesive layer is 10 to 25 μm. Drying conditions are usually 100 to 200 ° C. for 1 to 5 minutes. The solvent is not particularly limited, but a mixed solvent of an aromatic solvent such as toluene, xylene and chlorobenzene and an alcohol solvent such as methanol, ethanol and propanol is preferable. A protective film is laminated on the film thus obtained, and finally, the film is slit to about 35 to 158 mm.
[0037]
From the thus obtained tape with an adhesive for TAB of the present invention, a semiconductor device can be manufactured, for example, as shown in Examples, and an interposer for semiconductor can be manufactured.
[0038]
【Example】
Hereinafter, the present invention will be described more specifically with reference to examples.
[0039]
Examples 1 to 3, Comparative Example 1
The following thermoplastic resin, epoxy resin, phenol resin, silica powder, silane coupling agent and other additives were blended so as to have the composition ratios shown in Table 1, respectively. The mixture was stirred and dissolved in a mixed solvent of monochlorobenzene at 40 ° C. to prepare an adhesive solution.
[0040]
A. Thermoplastic resin: polyamide resin (acid component: dimer acid, amine component: hexamethylenediamine, acid value 1.0, amine value 2.0)
B. Epoxy resin: I. 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenyl (epoxy equivalent: 195)
II. 1,6-bis (2,3-epoxypropoxy) naphthalene (epoxy equivalent: 149)
C. Silica powder: spherical fused silica having an average particle size of 1 μm and a maximum particle size of 5 μm Silane coupling agent:
I. γ-glycidoxypropyltrimethoxysilane II. N-phenylaminopropyltrimethoxysilane Phenol resin: resol phenol "CKM-1282" (manufactured by Showa High Polymer Co., Ltd.)
F. Additive: 2-heptadecyl imidazole.
[0041]
These adhesive solutions were applied to a 75 μm-thick polyimide film (“UPILEX” 75S manufactured by Ube Industries, Ltd.) with a bar coater to a dry thickness of about 20 μm. After drying for minutes, a tape with an adhesive for TAB was prepared. Next, after laminating 18 μm thick electrolytic copper foil on these TAB adhesive tapes at 140 ° C. and 1 MPa, 80 ° C., 3 hours, 100 ° C., 5 hours, 150 ° C. in an air oven. Heat treatment was performed sequentially for 5 hours to obtain a TAB tape with a copper foil. Photoresist film formation, etching, and resist peeling were performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, and samples for evaluation of adhesion strength and tin plating resistance were prepared. The properties of the adhesive were evaluated. Table 1 shows the results.
[0042]
Evaluation method (1) Tin plating treatment: A sample for evaluation was immersed in a borofluoric acid-based electroless tin plating solution at 70 ° C. for 5 minutes, and plated with 0.5 μm thickness. (2) Peel strength: Conductor width of 50 μm Using the sample for evaluation, the conductor was peeled in the direction of 90 ° at a speed of 50 mm / min, and the peeling force was measured at normal temperature and 150 ° C. (3) High temperature and high humidity bias insulation: conductor width 200 μm, distance between conductors Using a 50-μm comb-shaped measurement pattern, a voltage of 100 V was applied under an environment of 130 ° C. and 85% RH, and the time required for the insulation resistance value to fall to 1/10 or less of the initial value was measured.
[0043]
[Table 1]

[0044]
As is clear from the results in Table 1, the TAB tape obtained according to the present invention is excellent in chemical resistance and has high adhesiveness and moisture-resistant insulation. On the other hand, Comparative Example 1, in which no silane coupling agent was used, was not only low in adhesiveness but also inferior in chemical resistance and moisture resistance.
[0045]
【The invention's effect】
According to the present invention, a novel TAB tape having excellent insulating properties under high temperature and high humidity, adhesiveness after resist peeling or plating treatment, adhesiveness at high temperature and chemical resistance, and a semiconductor device using the same are provided. It can be provided industrially, and the reliability of a semiconductor device for high-density mounting can be improved by using the tape with an adhesive for TAB of the present invention.
[Brief description of the drawings]
FIG. 1 is a perspective view of one embodiment of a pattern tape before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for TAB of the present invention.
FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device using the TAB adhesive tape of the present invention.
FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for TAB of the present invention.
FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for TAB of the present invention.
[Explanation of symbols]
1,12,20 Flexible insulating film 2,13,21 Adhesive 3 Sprocket hole 4 Device hole 5,14,22 Conductor 6 for connecting semiconductor integrated circuit 6 Inner lead portion 7 Outer lead portion 8,15, Reference Signs List 23 semiconductor integrated circuits 9, 16, 24 sealing resin 10, 17, 25 gold bump 11 protective film 18, 26 solder ball 19 reinforcing plate 27 solder resist

Claims (13)

In a TAB adhesive tape comprising a laminate having a flexible organic insulating film, an adhesive layer and a protective film layer, the adhesive layer is a thermoplastic resin (A) or an epoxy resin (B). And a silica powder (C) and a silane coupling agent (D) as essential components. The tape with an adhesive for TAB according to claim 1, wherein the surface of the silica powder (C) is treated in advance with a silane coupling agent (D). The adhesive tape for TAB according to claim 1, wherein the blending ratio of the silane coupling agent (D) is 0.5 to 10 parts by weight based on 100 parts by weight of the silica powder (C). The adhesive tape for TAB according to claim 1, wherein the silane coupling agent (D) is a silane coupling agent (d) represented by the following formula (I).

(X represents a hydrogen atom, a phenyl group, a glycidyl group, an amino group, a vinyl group, an acryloyl group or a mercapto group, and R ¹ and R ² may be the same or different and represent an alkyl group having 1 to 4 carbon atoms. And n represents an integer of 1 or more, and m represents an integer of 0 to 3.) 2. The silica powder (C) has an average particle size of 10 [mu] m or less and a maximum particle size of 20 [mu] m or less, and the compounding ratio of the silica powder (C) is 5 to 70% by weight of the whole adhesive layer. TAB tape with adhesive. The tape with an adhesive for TAB according to claim 1, wherein the silica powder (C) has an average particle size of 2 µm or less and a maximum particle size of 10 µm or less. The tape with an adhesive for TAB according to claim 1, wherein the silica powder (C) is a fused silica powder (c '). The adhesive tape for TAB according to claim 1, wherein the silica powder (C) is a fused silica powder (c ') and a spherical fused silica powder (c "). The tape with an adhesive for TAB according to claim 1, wherein the epoxy resin (B) contains at least one kind of epoxy resin represented by the following formula (II), (III), (IV) or (V). .

(However, R3 to R10 may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)

(However, two of R11 to R18 are 2,3-epoxypropoxy groups, and the rest may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)

(However, R19 to R22 may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.)

(However, R23 to R24 may be the same or different and represent a hydrogen atom, a C1 to C4 lower alkyl group or a halogen atom.) The tape with an adhesive for TAB according to claim 1, wherein the organic insulating film is a film made of polyimide. Claim 1 TAB adhesive tape with a wherein the organic insulating film is a film made of an epoxy resin containing immersion glass cloth. Semiconductor connecting substrate using TAB adhesive with tape according to any one of claims 1 to 11. A semiconductor device using the TAB adhesive with tape according to any one of claims 1 to 11.

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