JPH10107093A - Tape with bonding agent for semiconductor device use, copper-clad laminated board using that, substrate for semiconductor connection use and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To contrive the enhancement of the adhesiveness of a tape with a bonding agent for semiconductor use while the superior insulation properties of the tape are held by a method wherein a bonding agent layer subsequent to hot setting is provided with a microphase isolated structure comprising two phases or more to a plurality of continuous phases. SOLUTION: A laminated structure tape is constituted of an organic insulating film 1 having a flexibility, a bonding agent layer 2 formed on the film 1 and a protective film layer. After the layer 2 is subjected to hot setting, it has a microphase isolated structure, which is constituted of at least two continuous phases or more. Moreover, the components of the continuous phases are coupled with each other and are substantially in a state that they are mutually mixed into an indeterminate form or a layer type as a matrix component. In such a way, the two components or more of different characteristics are made to mix as microcontinuous phases, whereby characteristics higher than those of a simple mixture are revealed in the layer 2 and a tape with bonding agent for semiconductor device use, which can achieve simultaneously a superior adheveness while the tape holds superior insulation properties, can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for semiconductor connection, such as a tape automated bonding (TAB) type pattern processing tape, a ball grid array (BGA) package interposer, and the like, which are used when mounting a semiconductor integrated circuit. TECHNICAL FIELD The present invention relates to a tape with an adhesive for a semiconductor device, a copper-clad laminate using the same, a substrate for semiconductor connection, and a semiconductor device, which are suitable for producing a semiconductor device.

[0002]

2. Description of the Related Art For mounting a semiconductor integrated circuit (IC), a method using a metal lead frame is most often used. In recent years, however, IC connection on an organic insulating film such as glass epoxy or polyimide is performed. Systems via a connection substrate in which a conductor pattern for connection is formed are increasing. A typical example is a tape carrier package (T) using a tape automated bonding (TAB) method.
CP).

In general, a tape with a TAB adhesive (hereinafter referred to as a TAB tape) is used as a TCP connection substrate (pattern tape). An ordinary TAB tape has a three-layer structure in which an uncured adhesive layer and a polyester film having a release property are laminated as a protective film layer on a flexible organic insulating film such as a polyimide film. It is configured.

[0004] TAB tapes include: (1) perforation of sprocket and device holes, (2) heat lamination with copper foil and heat curing of an adhesive, (3) pattern formation (resist coating,
(Etching, resist removal), (4) TAB which is a connection substrate through processing steps such as tin or gold-plating
Processed into tape (pattern tape). FIG. 1 shows the shape of the pattern tape. FIG. 2 is a cross-sectional view of one embodiment of the TCP semiconductor device of the present invention. The inner lead portion 6 of the pattern tape is thermocompression-bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 to mount the semiconductor integrated circuit. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin 9. Finally, the TCP type semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7, and is mounted on an electronic device.

On the other hand, as electronic devices have become smaller and lighter in recent years, semiconductor packages have also been designed for high-density packaging, and BGAs (ball grid arrays) and CSPs (chip scale packages) having connection terminals arranged on the back surface of the packages. Has come to be used.

In BGA and CSP, a connection substrate called an interposer is indispensable, like TCP. However, in the connection method of the IC, most of the conventional TCP uses TAB gang bonding,
GA and CSP use either TAB method or wire bonding method for each package specification, application,
The difference is that they are selected depending on the design policy. FIG.
FIG. 4 is a cross-sectional view of one embodiment of the semiconductor device (BGA, CSP) of the present invention.

The interposer referred to here is the T
Since it has the same function as the CP pattern tape, the tape with an adhesive for semiconductors of the present invention can be used. Of course, it is advantageous to a connection method having inner leads, but it is particularly suitable for a process of laminating copper foil after mechanically punching holes for solder balls and device holes for ICs. On the other hand, since the connection is made by wire bonding, inner leads are not required, and in the process of opening holes for solder balls and device holes for ICs together with the copper foil, the copper foil that has already been laminated and the adhesive is heated and cured A laminated board may be used.

In any of the above package forms, the adhesive layer of the adhesive tape for semiconductors is finally left in the package, so that it is required to satisfy various properties such as insulation, heat resistance and adhesiveness. You. As electronic devices have become smaller and more dense, the pattern pitch (conductor width and conductor width) of semiconductor connection substrates has become extremely narrow, and copper foil with high insulation reliability and a narrow conductor width has been developed. There is an increasing need for an adhesive having an adhesive force (hereinafter, referred to as an adhesive force). Recently, in particular, as an accelerated test of insulation reliability, a temperature of 130 ° C., 85% R.C. H high temperature and high humidity or 12
Attention has been paid to the rate of decrease in insulation resistance in a state where a voltage is continuously applied at a high temperature of 5 ° C. to 150 ° C.

Conventionally, the adhesive layer of a TAB tape which has been used as a tape with an adhesive for semiconductors has been mainly composed of a mixed composition of an epoxy resin and / or a phenol resin and a polyamide resin (Japanese Patent Laid-Open Publication No. HEI 9 (1994)). 2-1434
No. 47, JP-A-3-217035, etc.).

[0010]

However, the conventional adhesive tape for semiconductors (TAB tape) is not always sufficient in the above-mentioned insulation reliability and adhesive strength. For example, insulation reliability is insufficient because insulation decreases rapidly in a state of continuous voltage application at high temperature and high humidity. In particular, when an integrated circuit or the like that operates at a high speed generates a large amount of heat, a serious situation may occur. However, it is difficult to balance the adhesiveness and the insulating property, and if one of the adhesiveness and the insulating property is improved, the other is reduced, and it cannot be said that the overall properties are necessarily sufficient. As for the adhesiveness, as the conductor width becomes narrower, the adhesive strength is reduced, and the conductor may be peeled off in a post-process such as bonding, so that it may not be possible to connect to the integrated circuit and the circuit board. This is mainly due to a shortage of the absolute value of the adhesive strength and a decrease in the effective adhesive area due to the penetration of the plating solution between the conductor and the adhesive. Insulation and heat resistance are reduced by the polyamide resin softening under heating. These problems are basically caused by insufficient control of the adhesive structure as a composite material of a thermoplastic resin and a thermosetting resin.

The present invention solves the above problems, and a tape with an adhesive for a semiconductor device capable of simultaneously achieving excellent adhesiveness while maintaining excellent insulating properties, and a copper-clad laminate using the same. It is an object to provide a semiconductor connection substrate and a semiconductor device.

[0012]

Means for Solving the Problems To achieve the above object, the present inventors have developed a tape with an adhesive for a semiconductor, which has a microphase-separated structure of an adhesive component at an electron microscope level and an adhesion to metal. As a result of intensive studies on the relationship with the insulating property, it was found that a tape with an adhesive for semiconductor devices having excellent adhesiveness and insulating properties can be obtained by skillfully controlling the microphase-separated structure of the adhesive. It has been reached.

That is, the present invention is a laminated tape having an adhesive layer and a protective film layer on a flexible organic insulating film, and the adhesive layers after heat curing are individually connected to phases. Characterized in that it has a microphase-separated structure including at least two or more continuous phases.
The present invention relates to a tape with an adhesive for a semiconductor device, a copper-clad laminate using the same, a substrate for semiconductor connection, and a semiconductor device. ◎

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The microphase-separated structure has been conventionally used for polymer blends or block and graft copolymers in transmission electron microscopy (TEM), differential scanning calorimetry.
(DSC), light scattering, small-angle X-ray scattering, infrared absorption spectrum (I
R), it is a fine heterogeneous structure confirmed by various methods such as, etc., the micro phase separation structure of the adhesive layer in the present invention, especially, a method of dyeing ultrathin sections with a metal compound And those confirmed by a transmission electron microscope.

The adhesive layer in the present invention has a microphase-separated structure composed of at least two or more continuous phases after heat curing. The continuous phase here is not particularly limited as long as the components are connected and are substantially mixed with each other in an indefinite or layered manner as matrix components. For example, in the case of a two-phase system composed of an A phase and a B phase, one of the A phase and the B phase forms a rod-shaped domain, and the structure dispersed in the other phase or the A phase and the B phase have a lamellar structure. Is exemplified. On the other hand, a so-called sea-island structure in which spherical or amorphous isolated domains are dispersed in the matrix of the other phase does not correspond to this.

In the adhesive layer of the present invention, it is presumed that by mixing two or more components having different properties as a micro continuous phase, properties more than a mere mixture are exhibited.

Therefore, in the adhesive layer of the present invention, the average width of the continuous phase is preferably 5 to 1000 nm, more preferably 10 to 700 nm, and more preferably 2 to 1000 nm.
More preferably, it is 0 to 500 nm. If it is 5 nm or less, the adhesive properties, insulating properties and the like approach the average properties of a mere mixture, and if it is 1000 nm or more, it is too uneven and only one property of each component is expressed. This is not preferred.

As long as the adhesive layer of the present invention has the above-mentioned microphase-separated structure, the components constituting it are not particularly limited, but the compatibility of each component constituting the continuous layer is important.
If the compatibility is too good or bad, the desired structure cannot be obtained. In view of the required properties of the adhesive tape for a semiconductor device, examples of preferable components include a system in which a thermoplastic resin and a thermosetting resin are each used as a continuous phase.

There are various characteristic values indicating the compatibility. For example, it is preferable that the haze measured by the following method is 7 to 50 for any combination of the components forming the continuous phase. . If it is less than 7, the compatibility is too good,
If it is more than 50, the compatibility is poor.

Haze is defined as two of the components forming the continuous phase.
The components are selected and mixed in equal amounts to prepare a sample having a thickness of 12 μm, which is measured by a method according to JIS-K7105.

It is more preferable to add a substance having a compatibilizing effect (a so-called compatibilizer) for compatibilizing the components constituting the continuous layer, in addition to the effect of the compatibility of the components constituting the continuous layer. .

In this case, the compatibilizer reacts with the non-reactive type, which is effective by being compatible with each of the components forming the continuous layer, and reacts with the components forming the continuous layer. There is a reaction type that exhibits a compatibilizing effect by a covalent bond. In any case, the addition of a small amount is effective, and a large amount is not preferable because it forms a spherical domain by itself.

Examples of the non-reactive type include a block polymer and a graft polymer having each component in a segment. Examples of the reaction type include substances having two or more functional groups such as an epoxy group, an isocyanate group, and a vinyl group. In particular, the reaction type is preferably one having a small functional group equivalent and a high reaction rate with the functional group of the continuous phase component so that the effect can be exerted even with a small amount of addition.

Examples of the thermoplastic resin include known resins such as polyamide, polyester, polyimide, polyamideimide, polyurethane, NBR rubber, acrylic, and polyvinyl butyral. Polyamide is particularly preferable from the viewpoint of adhesiveness and insulating properties with copper foil, and various known ones can be used.However, the adhesive layer has flexibility, and has excellent insulating properties due to low water absorption. Those containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) are preferred.
Polyamide resin containing dimer acid can be obtained by polycondensation of dimer acid and diamine according to a conventional method. Is also good.
Diamines such as ethylenediamine, hexamethylenediamine, piperazine, etc. can be used, and hygroscopicity,
Two or more kinds may be mixed from the viewpoint of solubility.

Examples of the thermosetting resin include known resins such as an epoxy resin, a phenol resin, a melamine resin, a xylene resin, a furan resin, and a cyanate ester resin. Particularly, epoxy resin and phenol resin are preferable because of their excellent insulating properties.

For example, phenolic resins include alkyl-substituted phenols such as phenol, cresol, pt-butylphenol and nonylphenol; cyclic alkyl-modified phenols such as p-phenylphenol, terpene and dicyclopentadiene; skeletons such as naphthalene and anthracene. May be provided.

The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but is not limited to bisphenol F, bisphenol A, bisphenol S,
Diglycidyl ethers such as dihydroxynaphthalene, dimer acid, resorcinol, dicyclopentadiene diphenol, dicyclopentadiene dixylenol, terpene diphenol, biphenyl, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylol methane, epoxy Tetraphenylolethane, epoxidized metaxylenediamine, and the like.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited at all. For example, aromatic polyamines, amine complexes of boron trifluoride such as boron trifluoride triethylamine complex, imidazole derivatives such as 2-alkyl-4-methylimidazole and 2-phenyl-4-alkylimidazole, phthalic anhydride, trianhydride Organic acids such as melitic acid, dicyandiamide, triphenylphosphine, diazabicycloundecene and the like can be used. The addition amount is epoxy resin and phenol resin 10
It is preferably 0.1 to 10 parts by weight based on 0 part by weight.

In addition to the above components, addition of organic and inorganic components such as an antioxidant and an ion scavenger is not limited as long as the properties of the adhesive are not impaired.

The flexible insulating film referred to in the present invention is a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or glass cloth impregnated with epoxy resin. Of the composite material having a thickness of 25 to 125 μm, and a plurality of films selected from these may be laminated and used. If necessary, a surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical surface roughening, and easy adhesion coating treatment can be performed.

The protective film layer in the present invention is not particularly limited as long as it can be peeled from the adhesive surface without damaging the form of the TAB tape before the copper foil is thermally laminated.
For example, a polyester film or a polyolefin film coated with a silicone or fluorine compound, and a paper obtained by laminating the same.

In order to form a microphase-separated structure in the adhesive layer of the present invention, the following method can be specifically exemplified, but it is not limited to this method.

First, as a component for forming a continuous layer, a polyamide resin soluble in an organic solvent is selected from a thermoplastic resin, and a phenol resole resin is selected from a thermosetting resin. Next, these are mixed in substantially the same amount, and further, an appropriate amount of an epoxy resin and a curing accelerator are added. After dissolving in a solvent, the mixture is applied to an insulating film and dried by heating to form an adhesive layer.

It is necessary that the polyamide resin and the phenol resole resin have an appropriate mutual compatibility.
In this case, it is presumed that the epoxy resin reacts with the polyamide resin and the phenol resole resin at the time of forming a coating film during heating and drying, and acts as a reaction type compatibilizer. To promote. Therefore, in this case, it is effective to add a small amount of these to the polyamide resin and the phenol resole resin, and if the amount is large, they themselves form spherical domains, which is not preferable. As a preferred example, the amount of addition is such that the epoxy group is contained in an amount of 0.5 to 5.0 times the functional group (carboxyl group and / or amino group) of the polyamide resin. It is more preferable that the epoxy resin is appropriately mixed so as to have properties compatible with both the polyamide and the phenol resin. As such an example, a combination of a diglycidyl ether dimer acid epoxy resin having a good compatibility with polyamide and a naphthalene type epoxy resin having a bad compatibility with polyamide can be given.

The solvent is not limited, but is preferably a good solvent for both the polyamide resin and the phenol resole resin.

More specifically, an example satisfying the above conditions is a combination of a dimer acid polyamide resin having a weight average molecular weight of 20,000 to 200,000 and a straight type and / or bisphenol A type resole phenol resin. I do. Examples of the epoxy resin and the curing accelerator include a bisphenol A type epoxy resin and a tertiary amine.

Next, a method of manufacturing a tape with an adhesive for TAB will be described.

A coating material in which an adhesive composition is dissolved in a solvent is applied to a flexible insulating film and dried. It is preferable to apply the adhesive layer so that the film thickness is 10 to 25 μm. Drying conditions are 100 to 200 ° C. for 1 to 5 minutes. The solvent is not particularly limited, but a mixture of an aromatic system such as toluene, xylene, and chlorobenzene and an alcohol system such as methanol, ethanol, and propanol, or a system in which chloroform is added thereto is preferable. A protective film is laminated on the thus-obtained film with an adhesive and finally slit into a width of about 35 to 158 mm.

[0039]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

Evaluation Method (1) Preparation Method of Evaluation Sample An 18 μm electrolytic copper foil was laminated on a tape sample with an adhesive for a semiconductor device at 140 ° C. and 1 kg / cm ² . Then, in an air oven, 80 ° C, 3 hours, 10
A heat curing treatment was sequentially performed at 0 ° C. for 5 hours, at 150 ° C. for 5 hours, and a tape with an adhesive for a semiconductor device with a copper foil was prepared. A photoresist film was formed on the copper foil surface of the adhesive tape for a semiconductor device with the copper foil, etched, and the resist was peeled off by a conventional method to prepare samples for evaluating the adhesive strength and the insulating property, respectively. (2) Tin plating treatment The sample obtained by the method (1) was immersed in a borofluoric acid-based electroless tin plating solution at 70 ° C for 5 minutes.
5 μm thick plating was applied. (3) Peel strength Using a sample for evaluation of a conductor width of 50 μ obtained by the above methods (1) and (2), the conductor was moved 10 mm /
The film was peeled at a speed of min and the peeling force at that time was measured. (4) High-Temperature High-Humidity Insulation Reliability Using a sample for evaluating a comb shape having a conductor width of 25 μm and a conductor-to-conductor distance of 25 μm shown in FIG. 5 and obtained by the methods (1) and (2), Tank (Tabayespec Co., Ltd.)
130 ° C., 85% R.C.
H, in a state where a DC voltage of 100 V was continuously applied, the insulation resistance drop time at which the resistance value became 10 ⁷ Ω or less was measured. (5) High-Temperature Insulation Reliability Using an evaluation sample having the same shape as in the above (4), the sample was placed in an air oven (ID-21 type, manufactured by Yamato Kagaku Co., Ltd.).
In a state where a voltage of 0 ° C. and a direct current of 100 V were continuously applied, the insulation resistance drop time at which the resistance value became 10 ⁹ Ω or less was measured. (6) Observation by Transmission Electron Microscope The sample was prepared by forming an ultra-thin section of the adhesive layer from the pattern tape after the thermosetting reaction at 80 ° C. for 4 hours and at 160 ° C. for 4 hours. And obtained.

The observation was performed using a transmission electron microscope (H-7100FA, manufactured by Hitachi, Ltd.) at an accelerating voltage of 75
Performed at kV. The width of the continuous phase was determined as an average value obtained by measuring 20 points appropriately sampled from the photograph. (7) Measurement of haze A thermoplastic resin and a thermosetting resin are mixed in 1/1 by weight, dissolved in a common solvent of both so as to have a concentration of about 10% by weight, and dried by a casting method. The film is formed so as to have a thickness of about 12 μm. Using the obtained sample, haze was measured by a method according to JIS-K7105. Reference Example (Synthesis of Polyamide Resin) The dimer acid / hexamethylenediamine ratio was 1.1 to 0.1.
The reaction mass was adjusted to 9 and the acid / amine reactant, defoamer and 1% or less phosphoric acid catalyst were added to prepare the reactants. The reactants were stirred and heated at 140 ° C. for 1 hour, then heated to 205 ° C. and stirred for about 1.5 hours. Under a vacuum of about 2 kPa,
Hold for 0.5 hour to lower the temperature. Finally, an antioxidant was added, and a polyamide resin having a weight average molecular weight of 20,000 and an acid value of 10 was taken out. Example 1 (1) Preparation of Tape with Adhesive for Semiconductor 45% by weight of polyamide resin obtained in Reference Example, 27% by weight of bisphenol A / cresol cocondensation type phenol resole resin (CKS394, manufactured by Showa Polymer Co., Ltd.) Pt-Bu / straight cocondensation type phenol resole resin (manufactured by Showa Polymer Co., Ltd., CKM128)
2) 10% by weight, straight type phenol resole resin (manufactured by Sumitomo Bakelite Co., Ltd., PR11078) 10% by weight, 2,6 dihydroxynaphthalene type epoxy resin (manufactured by Dainippon Ink and Chemicals, Inc., "Epiclon" HP40)
32D, epoxy equivalent 140) 5% by weight, dimer acid diglycidyl ether type epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd., "Epicoat" 871, epoxy equivalent 42)
0) 3% by weight of a curing accelerator (San Apro Co., Ltd.)
Manufactured by UCAT SA831) in a mixture of methanol / monochlorobenzene / chloroform at 30 ° C. so as to have a solid content of 20% by weight. Then, the mixture was stirred and mixed to prepare an adhesive solution.

This adhesive was applied with a bar coater to a thickness of 75 μm.
Was applied to a polyimide film ("UPILEX" 75S, manufactured by Ube Industries, Ltd.) to a dry thickness of about 18 μm, and dried at 160 ° C. for 8 minutes to prepare a sheet with an adhesive. Furthermore, as a protective film, a thickness of 25
A μm polyethylene terephthalate film (“Lumirror” manufactured by Toray Industries, Inc.) was laminated at 80 ° C. and 0.1 MPa to prepare a tape with an adhesive for TAB.

FIG. 6 shows a transmission electron micrograph of the adhesive layer of the TAB adhesive tape. Also, in FIG.
In order to clarify the phase separation structure of the portion surrounded by A1, B1, C1, and D1 in FIG. 6, the photograph of FIG. 6 is traced and schematically shown. In FIG. 6, the darkly dyed portion is a phase containing a polyamide resin, and the lightly dyed portion is a component composed of a phenol resin and an epoxy resin. The characteristics are shown in Table 1. It turns out that it is excellent in adhesiveness and insulation.

(2) Preparation of a copper-clad laminate The above adhesive solution was coated with an organic insulating film having a thickness of 25 μm.
Is applied to a polyimide film (“Kapton” 100V, manufactured by Toray Dupont Co., Ltd.) so as to have a dry thickness of about 10 μ, dried at 100 ° C. for 1 minute and at 160 ° C. for 5 minutes, and further coated with an 18 μm electrolytic copper foil. At 140 ° C., 0.1 M
Lamination was performed under the condition of Pa to prepare an uncured copper-clad laminate. Subsequently, in an air oven, at 80 ° C. for 3 hours, 1
Heat-curing treatment was sequentially performed at 00 ° C. for 5 hours, 150 ° C. for 5 hours, and a copper-clad laminate was obtained. (3) Preparation of substrate for semiconductor connection Using the adhesive tape for a semiconductor device obtained by the above procedure, a conductor for connecting a semiconductor integrated circuit in the same manner as in the above evaluation methods (1) and (2). A circuit was formed to obtain a semiconductor connection substrate (pattern tape) shown in FIG. (4) Fabrication of Semiconductor Device Using the pattern tape of (3), inner lead bonding was performed at 450 ° C. for 1 minute to connect a semiconductor integrated circuit. Thereafter, an epoxy-based liquid sealant (“Hitariku Paint Co., Ltd.“ Chipcoat ”1320-6)
In 17), resin sealing was performed to obtain a semiconductor device. FIG. 2 shows a cross section of the obtained semiconductor device. Examples 2 to 3 In the same manner as in Example 1, tapes with an adhesive for semiconductor devices were obtained by using the raw materials and the adhesives prepared at the composition ratios shown in Table 1, respectively. The characteristics are also shown in Table 1. FIGS. 8 and 10 and FIGS. 9 and 11 show transmission electron micrographs and schematic diagrams of the phase separation structure, respectively. Comparative Example 50% by weight of the same polyamide resin as in the example and a phenol novolak resin (PSM4324, manufactured by Gunei Chemical Co., Ltd.)
20% by weight of 40% by weight of a bisphenol A epoxy resin ("Epicoat" 828, epoxy equivalent: 186, manufactured by Yuka Shell Epoxy Co., Ltd.), and a curing accelerator (UCAT SA831 manufactured by San Apro Co., Ltd.) The total amount of the resin components was adjusted to 0.5 when the total was 100, and TAB was prepared using an adhesive prepared in the same manner as in the Example.
A tape with an adhesive was obtained.

FIG. 12 shows a transmission electron micrograph of the adhesive layer of the obtained tape with adhesive for semiconductor devices, and Table 1 shows its characteristics. In FIG. 12, the portions that are deeply dyed are the polyamide resin and the phenol resin and have good compatibility, and thus do not have a clear phase-separated structure. The lightly dyed portion is a component composed of an epoxy resin and has a spherical domain structure. Therefore, the adhesive layer has a sea-island structure. As shown in Table 1, the adhesive strength, particularly the decrease due to tin plating, is remarkable, and the insulating property is low.

[0046]

[Table 1] ★ ● Examples and Comparative Examples show that the adhesive tape for semiconductor devices obtained by the present invention is excellent in adhesiveness and insulation reliability.

[0047]

Industrial Applicability The present invention provides a novel adhesive tape for a semiconductor device having excellent adhesiveness, a copper-clad laminate using the same, a substrate for semiconductor connection, and a semiconductor device industrially. The reliability of a semiconductor device for high-density mounting can be improved by the tape with an adhesive for a semiconductor device of the present invention.

[Brief description of the drawings]

FIG. 1 is a perspective view of one embodiment of a pattern tape before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device (TCP) using the adhesive tape for a semiconductor device of the present invention.

FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for a semiconductor device of the present invention;

FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for a semiconductor device of the present invention;

FIG. 5 is a schematic view of a sample for evaluating a comb shape for measuring insulation resistance.

FIG. 6 is a transmission electron micrograph of the adhesive layer of Example 1.

FIG. 7 is a schematic diagram of a phase separation structure obtained by tracing a transmission electron micrograph of the adhesive layer of Example 1.

FIG. 8 is a transmission electron micrograph of the adhesive layer of Example 2.

FIG. 9 is a schematic diagram of a phase separation structure obtained by tracing a transmission electron micrograph of the adhesive layer of Example 2.

FIG. 10 is a transmission electron micrograph of the adhesive layer of Example 3.

FIG. 11 is a schematic diagram of a phase separation structure obtained by tracing a transmission electron micrograph of the adhesive layer of Example 3.

FIG. 12 is a transmission electron micrograph of an adhesive layer of a comparative example.

DESCRIPTION OF SYMBOLS 1,18 Flexible insulating film 2,12,17 Adhesive 3 Sprocket hole 4 Device hole 5 Conductor for connecting semiconductor integrated circuit 6 Inner lead part 7 Outer lead part 8 Semiconductor integrated circuit 9 Sealing resin 10 Gold bump 11 Protective film 13 Reinforcement plate 14 Solder ball 19 Reinforcement plate 15 Solder resist 16 Conductor part of insulation resistance measurement pattern

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI C09J 177/00 C09J 177/00 201/00 201/00

Claims (12)

[Claims] 1. An organic insulating film having flexibility,
A laminated structure tape having an adhesive layer and a protective film layer, wherein the adhesive layer after heat curing has a microphase-separated structure including at least two or more continuous phases in which phases are individually connected. An adhesive tape for a semiconductor device, comprising: 2. The average width of each continuous phase is 5-100.
2. The tape with an adhesive for a semiconductor device according to claim 1, wherein the tape has a thickness of 0 nm. 3. A method according to claim 2, wherein at least one of the plurality of continuous phases is one.
2. The adhesive for a semiconductor device according to claim 1, wherein the adhesive contains at least one kind of thermoplastic resin and at least one of the other continuous phases contains at least one kind of thermosetting resin. tape. 4. The tape with an adhesive for a semiconductor device according to claim 1, wherein the adhesive layer contains a polyamide resin. 5. The tape with an adhesive for a semiconductor device according to claim 1, wherein the adhesive layer contains a phenol resin. 6. The tape with an adhesive for a semiconductor device according to claim 1, wherein the adhesive layer contains an epoxy resin. 7. The method according to claim 1, wherein the polyamide resin contains a dicarboxylic acid having 36 carbon atoms as an essential component.
The tape with an adhesive for semiconductor devices according to the above. 8. A copper-clad laminate using the tape with adhesive for a semiconductor device according to claim 1. 9. A semiconductor connection substrate using the adhesive tape for a semiconductor device according to claim 1. 10. A semiconductor device using the substrate for semiconductor connection according to claim 9. 11. A semiconductor connection substrate using the copper-clad laminate according to claim 8. 12. A semiconductor device using the semiconductor connection substrate according to claim 11.