JPH10125927A5 - - Google Patents
Info
- Publication number
- JPH10125927A5 JPH10125927A5 JP1996294419A JP29441996A JPH10125927A5 JP H10125927 A5 JPH10125927 A5 JP H10125927A5 JP 1996294419 A JP1996294419 A JP 1996294419A JP 29441996 A JP29441996 A JP 29441996A JP H10125927 A5 JPH10125927 A5 JP H10125927A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- semiconductor device
- insulating film
- active layer
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29441996A JPH10125927A (ja) | 1996-10-15 | 1996-10-15 | 半導体装置およびその作製方法 |
| TW086114475A TW451284B (en) | 1996-10-15 | 1997-10-03 | Semiconductor device and method of manufacturing the same |
| US08/951,819 US6365933B1 (en) | 1996-10-15 | 1997-10-14 | Semiconductor device and method of manufacturing the same |
| CNB991248570A CN1178270C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| CNB2006100025945A CN100550394C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| CNB97122885XA CN1163974C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| KR1019970052690A KR100483302B1 (ko) | 1996-10-15 | 1997-10-15 | 반도체장치 |
| CNB991248562A CN1277312C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| US10/024,850 US7023052B2 (en) | 1996-10-15 | 2001-12-19 | Semiconductor device having crystalline semiconductor layer |
| KR1020020061395A KR100488311B1 (ko) | 1996-10-15 | 2002-10-09 | 반도체장치 |
| US11/081,564 US7138658B2 (en) | 1996-10-15 | 2005-03-17 | Semiconductor device and method of manufacturing the same |
| US11/533,212 US8368142B2 (en) | 1996-10-15 | 2006-09-19 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29441996A JPH10125927A (ja) | 1996-10-15 | 1996-10-15 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005088626A Division JP4515302B2 (ja) | 2005-03-25 | 2005-03-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10125927A JPH10125927A (ja) | 1998-05-15 |
| JPH10125927A5 true JPH10125927A5 (enrdf_load_stackoverflow) | 2004-10-14 |
Family
ID=17807520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29441996A Withdrawn JPH10125927A (ja) | 1996-10-15 | 1996-10-15 | 半導体装置およびその作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH10125927A (enrdf_load_stackoverflow) |
| CN (1) | CN100550394C (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7153729B1 (en) * | 1998-07-15 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7294535B1 (en) | 1998-07-15 | 2007-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7084016B1 (en) | 1998-07-17 | 2006-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7282398B2 (en) | 1998-07-17 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same |
| US6559036B1 (en) | 1998-08-07 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000208771A (ja) | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
| JP4481355B2 (ja) * | 2009-07-23 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4481354B2 (ja) * | 2009-07-23 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4481359B2 (ja) * | 2009-08-20 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4481358B2 (ja) * | 2009-08-20 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101976212B1 (ko) * | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| CN110010058B (zh) * | 2019-05-20 | 2021-01-29 | 京东方科技集团股份有限公司 | 阵列基板及显示面板 |
-
1996
- 1996-10-15 JP JP29441996A patent/JPH10125927A/ja not_active Withdrawn
-
1997
- 1997-10-15 CN CNB2006100025945A patent/CN100550394C/zh not_active Expired - Fee Related
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