JPH10125927A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法Info
- Publication number
- JPH10125927A JPH10125927A JP29441996A JP29441996A JPH10125927A JP H10125927 A JPH10125927 A JP H10125927A JP 29441996 A JP29441996 A JP 29441996A JP 29441996 A JP29441996 A JP 29441996A JP H10125927 A JPH10125927 A JP H10125927A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon film
- semiconductor device
- active layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 121
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 62
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000002425 crystallisation Methods 0.000 claims abstract description 36
- 230000008025 crystallization Effects 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000012298 atmosphere Substances 0.000 claims abstract description 28
- 238000005247 gettering Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 317
- 239000013078 crystal Substances 0.000 claims description 145
- 238000000034 method Methods 0.000 claims description 66
- 238000010438 heat treatment Methods 0.000 claims description 55
- 229910052759 nickel Inorganic materials 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 229910052736 halogen Inorganic materials 0.000 claims description 28
- 150000002367 halogens Chemical class 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 9
- 230000001737 promoting effect Effects 0.000 claims description 7
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 7
- 230000001131 transforming effect Effects 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims 3
- 229910052801 chlorine Inorganic materials 0.000 claims 3
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 31
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 84
- 239000012535 impurity Substances 0.000 description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 150000002500 ions Chemical group 0.000 description 33
- 239000010407 anodic oxide Substances 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 25
- 229910052782 aluminium Inorganic materials 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 125000004429 atom Chemical group 0.000 description 21
- 239000000969 carrier Substances 0.000 description 19
- 230000006870 function Effects 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 230000001976 improved effect Effects 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 230000003211 malignant effect Effects 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000002040 relaxant effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000005535 acoustic phonon Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29441996A JPH10125927A (ja) | 1996-10-15 | 1996-10-15 | 半導体装置およびその作製方法 |
| TW086114475A TW451284B (en) | 1996-10-15 | 1997-10-03 | Semiconductor device and method of manufacturing the same |
| US08/951,819 US6365933B1 (en) | 1996-10-15 | 1997-10-14 | Semiconductor device and method of manufacturing the same |
| CNB991248570A CN1178270C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| CNB2006100025945A CN100550394C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| CNB97122885XA CN1163974C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| KR1019970052690A KR100483302B1 (ko) | 1996-10-15 | 1997-10-15 | 반도체장치 |
| CNB991248562A CN1277312C (zh) | 1996-10-15 | 1997-10-15 | 半导体器件及其制造方法 |
| US10/024,850 US7023052B2 (en) | 1996-10-15 | 2001-12-19 | Semiconductor device having crystalline semiconductor layer |
| KR1020020061395A KR100488311B1 (ko) | 1996-10-15 | 2002-10-09 | 반도체장치 |
| US11/081,564 US7138658B2 (en) | 1996-10-15 | 2005-03-17 | Semiconductor device and method of manufacturing the same |
| US11/533,212 US8368142B2 (en) | 1996-10-15 | 2006-09-19 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29441996A JPH10125927A (ja) | 1996-10-15 | 1996-10-15 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005088626A Division JP4515302B2 (ja) | 2005-03-25 | 2005-03-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10125927A true JPH10125927A (ja) | 1998-05-15 |
| JPH10125927A5 JPH10125927A5 (enrdf_load_stackoverflow) | 2004-10-14 |
Family
ID=17807520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29441996A Withdrawn JPH10125927A (ja) | 1996-10-15 | 1996-10-15 | 半導体装置およびその作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH10125927A (enrdf_load_stackoverflow) |
| CN (1) | CN100550394C (enrdf_load_stackoverflow) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6274888B1 (en) | 1999-01-11 | 2001-08-14 | Hitachi, Ltd | Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
| US6911698B2 (en) | 1998-07-17 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7153729B1 (en) * | 1998-07-15 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7186600B2 (en) | 1998-08-07 | 2007-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7282398B2 (en) | 1998-07-17 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same |
| US7294535B1 (en) | 1998-07-15 | 2007-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| JP2009246389A (ja) * | 2009-07-23 | 2009-10-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2009260369A (ja) * | 2009-07-23 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009283974A (ja) * | 2009-08-20 | 2009-12-03 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US7638805B2 (en) | 1998-09-04 | 2009-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| JP2010016391A (ja) * | 2009-08-20 | 2010-01-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101976212B1 (ko) * | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| CN110010058B (zh) * | 2019-05-20 | 2021-01-29 | 京东方科技集团股份有限公司 | 阵列基板及显示面板 |
-
1996
- 1996-10-15 JP JP29441996A patent/JPH10125927A/ja not_active Withdrawn
-
1997
- 1997-10-15 CN CNB2006100025945A patent/CN100550394C/zh not_active Expired - Fee Related
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294535B1 (en) | 1998-07-15 | 2007-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7153729B1 (en) * | 1998-07-15 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7282398B2 (en) | 1998-07-17 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same |
| US7619253B2 (en) | 1998-07-17 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US6911698B2 (en) | 1998-07-17 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7084016B1 (en) | 1998-07-17 | 2006-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7192813B2 (en) | 1998-07-17 | 2007-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US7186600B2 (en) | 1998-08-07 | 2007-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7638805B2 (en) | 1998-09-04 | 2009-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| US7642598B2 (en) | 1998-09-04 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| US9070604B2 (en) | 1998-09-04 | 2015-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| USRE42241E1 (en) | 1998-09-04 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| USRE42139E1 (en) | 1998-09-04 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| USRE42097E1 (en) | 1998-09-04 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device |
| US6274888B1 (en) | 1999-01-11 | 2001-08-14 | Hitachi, Ltd | Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
| US6965122B2 (en) | 1999-01-11 | 2005-11-15 | Hitachi, Ltd. | Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
| US6512247B1 (en) | 1999-01-11 | 2003-01-28 | Hitachi, Ltd. | Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
| US7297982B2 (en) | 1999-01-11 | 2007-11-20 | Hitachi, Ltd. | Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
| JP2009260369A (ja) * | 2009-07-23 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009246389A (ja) * | 2009-07-23 | 2009-10-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2009283974A (ja) * | 2009-08-20 | 2009-12-03 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2010016391A (ja) * | 2009-08-20 | 2010-01-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
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| CN100550394C (zh) | 2009-10-14 |
| CN1825598A (zh) | 2006-08-30 |
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