JP2004022900A5 - - Google Patents
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- Publication number
- JP2004022900A5 JP2004022900A5 JP2002177450A JP2002177450A JP2004022900A5 JP 2004022900 A5 JP2004022900 A5 JP 2004022900A5 JP 2002177450 A JP2002177450 A JP 2002177450A JP 2002177450 A JP2002177450 A JP 2002177450A JP 2004022900 A5 JP2004022900 A5 JP 2004022900A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- compound
- barrier layer
- metal element
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 27
- 230000004888 barrier function Effects 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 229910052736 halogen Inorganic materials 0.000 claims 4
- 150000002367 halogens Chemical class 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 3
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 3
- 150000002830 nitrogen compounds Chemical class 0.000 claims 3
- 150000001722 carbon compounds Chemical class 0.000 claims 2
- 150000002222 fluorine compounds Chemical class 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 150000002927 oxygen compounds Chemical class 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002177450A JP2004022900A (ja) | 2002-06-18 | 2002-06-18 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002177450A JP2004022900A (ja) | 2002-06-18 | 2002-06-18 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004022900A JP2004022900A (ja) | 2004-01-22 |
| JP2004022900A5 true JP2004022900A5 (enrdf_load_stackoverflow) | 2005-10-06 |
Family
ID=31175482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002177450A Withdrawn JP2004022900A (ja) | 2002-06-18 | 2002-06-18 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004022900A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4700317B2 (ja) * | 2004-09-30 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4884735B2 (ja) * | 2005-09-16 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7602454B2 (en) * | 2006-06-30 | 2009-10-13 | Lg Display Co., Ltd | Liquid crystal display and method for fabricating the same |
| KR101236726B1 (ko) | 2006-06-30 | 2013-02-25 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| KR101901361B1 (ko) * | 2011-12-02 | 2018-09-27 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
| US10141190B2 (en) | 2016-09-19 | 2018-11-27 | Toshiba Memory Corporation | Manufacturing method of a semiconductor device |
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2002
- 2002-06-18 JP JP2002177450A patent/JP2004022900A/ja not_active Withdrawn