JP2004022900A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2004022900A JP2004022900A JP2002177450A JP2002177450A JP2004022900A JP 2004022900 A JP2004022900 A JP 2004022900A JP 2002177450 A JP2002177450 A JP 2002177450A JP 2002177450 A JP2002177450 A JP 2002177450A JP 2004022900 A JP2004022900 A JP 2004022900A
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- 239000010703 silicon Substances 0.000 claims description 29
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002177450A JP2004022900A (ja) | 2002-06-18 | 2002-06-18 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002177450A JP2004022900A (ja) | 2002-06-18 | 2002-06-18 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004022900A true JP2004022900A (ja) | 2004-01-22 |
| JP2004022900A5 JP2004022900A5 (enrdf_load_stackoverflow) | 2005-10-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002177450A Withdrawn JP2004022900A (ja) | 2002-06-18 | 2002-06-18 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004022900A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006106110A (ja) * | 2004-09-30 | 2006-04-20 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法、並びにテレビジョン装置 |
| JP2007081327A (ja) * | 2005-09-16 | 2007-03-29 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2008015460A (ja) * | 2006-06-30 | 2008-01-24 | Lg Philips Lcd Co Ltd | 液晶表示装置の製造方法及び液晶表示装置 |
| JP2008015455A (ja) * | 2006-06-30 | 2008-01-24 | Lg Phillips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| KR20130062102A (ko) * | 2011-12-02 | 2013-06-12 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
| US10141190B2 (en) | 2016-09-19 | 2018-11-27 | Toshiba Memory Corporation | Manufacturing method of a semiconductor device |
-
2002
- 2002-06-18 JP JP2002177450A patent/JP2004022900A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006106110A (ja) * | 2004-09-30 | 2006-04-20 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法、並びにテレビジョン装置 |
| JP2007081327A (ja) * | 2005-09-16 | 2007-03-29 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2008015460A (ja) * | 2006-06-30 | 2008-01-24 | Lg Philips Lcd Co Ltd | 液晶表示装置の製造方法及び液晶表示装置 |
| JP2008015455A (ja) * | 2006-06-30 | 2008-01-24 | Lg Phillips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| KR101236726B1 (ko) | 2006-06-30 | 2013-02-25 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| KR20130062102A (ko) * | 2011-12-02 | 2013-06-12 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
| US8841194B2 (en) | 2011-12-02 | 2014-09-23 | Samsung Display Co., Ltd. | Method of forming polysilicon layer and method of manufacturing thin film transistor using the polysilicon layer |
| KR101901361B1 (ko) | 2011-12-02 | 2018-09-27 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
| US10141190B2 (en) | 2016-09-19 | 2018-11-27 | Toshiba Memory Corporation | Manufacturing method of a semiconductor device |
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