CN100550394C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN100550394C
CN100550394C CNB2006100025945A CN200610002594A CN100550394C CN 100550394 C CN100550394 C CN 100550394C CN B2006100025945 A CNB2006100025945 A CN B2006100025945A CN 200610002594 A CN200610002594 A CN 200610002594A CN 100550394 C CN100550394 C CN 100550394C
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CN
China
Prior art keywords
film
active layer
film transistor
region
channel
Prior art date
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Expired - Fee Related
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CNB2006100025945A
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English (en)
Chinese (zh)
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CN1825598A (zh
Inventor
山崎舜平
大谷久
小山润
福永健司
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN1825598A publication Critical patent/CN1825598A/zh
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Publication of CN100550394C publication Critical patent/CN100550394C/zh
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CNB2006100025945A 1996-10-15 1997-10-15 半导体器件及其制造方法 Expired - Fee Related CN100550394C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP294419/96 1996-10-15
JP29441996A JPH10125927A (ja) 1996-10-15 1996-10-15 半導体装置およびその作製方法
JP301250/96 1996-10-24

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB991248562A Division CN1277312C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法

Publications (2)

Publication Number Publication Date
CN1825598A CN1825598A (zh) 2006-08-30
CN100550394C true CN100550394C (zh) 2009-10-14

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ID=17807520

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100025945A Expired - Fee Related CN100550394C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法

Country Status (2)

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JP (1) JPH10125927A (enrdf_load_stackoverflow)
CN (1) CN100550394C (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000208771A (ja) 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP4481355B2 (ja) * 2009-07-23 2010-06-16 株式会社半導体エネルギー研究所 半導体装置
JP4481354B2 (ja) * 2009-07-23 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4481359B2 (ja) * 2009-08-20 2010-06-16 株式会社半導体エネルギー研究所 半導体装置
JP4481358B2 (ja) * 2009-08-20 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101976212B1 (ko) * 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN110010058B (zh) * 2019-05-20 2021-01-29 京东方科技集团股份有限公司 阵列基板及显示面板

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Publication number Publication date
CN1825598A (zh) 2006-08-30
JPH10125927A (ja) 1998-05-15

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