JPH09503351A - イメージ検出器 - Google Patents
イメージ検出器Info
- Publication number
- JPH09503351A JPH09503351A JP8504853A JP50485396A JPH09503351A JP H09503351 A JPH09503351 A JP H09503351A JP 8504853 A JP8504853 A JP 8504853A JP 50485396 A JP50485396 A JP 50485396A JP H09503351 A JPH09503351 A JP H09503351A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- insulating layer
- image detector
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims abstract description 23
- 239000002800 charge carrier Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 230000004044 response Effects 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GVGLGOZIDCSQPN-PVHGPHFFSA-N Heroin Chemical compound O([C@H]1[C@H](C=C[C@H]23)OC(C)=O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4OC(C)=O GVGLGOZIDCSQPN-PVHGPHFFSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 101100268333 Solanum lycopersicum TFT8 gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000035418 detection of UV Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- -1 thium Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14672—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.基板上に設けられ、入射放射線に応答して電荷キャリアを発生する放射線変 換層によってバイアス電極から分離された材料層から形成されたセンサアレイを 具えて成る放射線を感知するイメージ検出器において、各センサは放射線変換層 に発生した電荷キャリアを捕捉する捕捉電極と、電荷を蓄積するコンデンサと、 少なくとも第1および第2電極を有するスイッチング素子とを具え、これら第1 および第2電極の一方を前記捕捉電極に結合してセンサに蓄積された電荷を読取 り得るようにし、各捕捉電極は関連するスイッチング素子を越えてスイッチング 素子上に設けられた絶縁層上に横方向に延在させてこの絶縁層により前記捕捉電 極から分離された下側の基準電極と相俟って関連するコンデンサを形成するよう にしたことを特徴とするイメージ検出器。 2.前記基準電極を一方の電極と同一材料層から形成するようにしたことを特徴 とする請求項1に記載のイメージ検出器。 3.各センサに対し、前記基準電極は前記センサを形成する層と比較して厚く、 前記スイッチング層上に延在する他の絶縁層上に設け、この絶縁層を前記基準電 極上全体に亘って設けるようにしたことを特徴とする請求項1に記載のイメージ 検出器。 4.各捕捉電極は絶縁層上に設けるとともに1つの電極上の絶縁層を貫通して形 成された孔を経て関連する1つの電極に接触せしめるようにしたことを特徴とす る請求項1〜3の何れかの項に記載のイメージ検出器。 5.各スイッチング素子は1つの薄膜トランジスタを具えることを特徴とする請 求項1〜3の何れかの項に記載のイメージ検出器。 6.各薄膜トランジスタはそのゲート電極が基板に近接したジグザグ配置の薄膜 トランジスタを具えることを特徴とする請求項5に記載のイメージ検出器。 7.基準電極を相互結合して共通電位点に接続するようにしたことを特徴とする 請求項1〜6の何れかの項に記載のイメージ検出器。 8.前記スイッチング素子は2次元マトリックスアレイに配列するようにしたこ とを特徴とする請求項1〜7の何れかの項に記載のイメージ検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9414639A GB9414639D0 (en) | 1994-07-20 | 1994-07-20 | An image detector |
GB9414639.6 | 1994-07-20 | ||
PCT/IB1995/000551 WO1996002937A2 (en) | 1994-07-20 | 1995-07-11 | An image detector for sensing x-ray radiation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09503351A true JPH09503351A (ja) | 1997-03-31 |
JP4388139B2 JP4388139B2 (ja) | 2009-12-24 |
Family
ID=10758618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50485396A Expired - Lifetime JP4388139B2 (ja) | 1994-07-20 | 1995-07-11 | イメージ検出器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5598004A (ja) |
EP (2) | EP0720778B1 (ja) |
JP (1) | JP4388139B2 (ja) |
DE (2) | DE69508372T2 (ja) |
GB (1) | GB9414639D0 (ja) |
WO (1) | WO1996002937A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000035480A (ja) * | 1998-06-26 | 2000-02-02 | Ftni Inc | 放射線医学用間接x線画像検出器 |
JP2009231715A (ja) * | 2008-03-25 | 2009-10-08 | Toshiba Corp | X線検出器 |
JP2014241381A (ja) * | 2013-06-12 | 2014-12-25 | ソニー株式会社 | 放射線撮像装置および放射線撮像表示システム |
KR20180113618A (ko) * | 2016-03-31 | 2018-10-16 | 주식회사 뷰웍스 | 판독 동안 비례 전하 이득을 갖는 방사선 촬상 검출기 |
WO2019187729A1 (ja) * | 2018-03-27 | 2019-10-03 | 株式会社ジャパンディスプレイ | 指紋検出装置及び表示装置 |
Families Citing this family (56)
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DE69424805T2 (de) * | 1994-07-27 | 2000-12-07 | 1294339 Ontario Inc | Bildwandlersystem |
US5981931A (en) * | 1996-03-15 | 1999-11-09 | Kabushiki Kaisha Toshiba | Image pick-up device and radiation imaging apparatus using the device |
US5652430A (en) * | 1996-05-03 | 1997-07-29 | Sterling Diagnostic Imaging, Inc. | Direct radiographic imaging panel |
US5770871A (en) * | 1996-06-20 | 1998-06-23 | Xerox Corporation | Sensor array with anticoupling layer between data lines and charge collection electrodes |
US5827757A (en) * | 1996-07-16 | 1998-10-27 | Direct Radiography Corp. | Fabrication of large area x-ray image capturing element |
US6020590A (en) * | 1998-01-22 | 2000-02-01 | Ois Optical Imaging Systems, Inc. | Large area imager with UV blocking layer |
US5994157A (en) * | 1998-01-22 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | Method of making a large area imager with UV Blocking layer, and corresponding imager |
CA2242743C (en) | 1998-07-08 | 2002-12-17 | Ftni Inc. | Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging |
KR100463337B1 (ko) * | 1998-09-16 | 2005-06-08 | 엘지.필립스 엘시디 주식회사 | 엑스레이영상감지소자및그제조방법 |
KR100443902B1 (ko) * | 1999-03-25 | 2004-08-09 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
DE19926582A1 (de) * | 1999-06-11 | 2000-12-14 | Philips Corp Intellectual Pty | Sensor |
JP4087028B2 (ja) * | 1999-06-14 | 2008-05-14 | シャープ株式会社 | 外部回路実装方法および熱圧着装置 |
DE19927694C1 (de) * | 1999-06-17 | 2000-11-02 | Lutz Fink | Halbleitersensor mit einer Pixelstruktur |
US20020121605A1 (en) * | 1999-06-17 | 2002-09-05 | Lutz Fink | Semiconductor sensor and method for its wiring |
US6281507B1 (en) * | 1999-06-30 | 2001-08-28 | Siemens Medical Systems, Inc. | Interdigital photoconductor structure for direct X-ray detection in a radiography imaging system |
JP3910341B2 (ja) * | 1999-08-04 | 2007-04-25 | シャープ株式会社 | 二次元画像検出器 |
KR100630880B1 (ko) * | 1999-12-31 | 2006-10-02 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
KR100658978B1 (ko) * | 2000-02-21 | 2006-12-18 | 엘지.필립스 엘시디 주식회사 | 엑스레이 디텍터용 어레이기판 제조방법 |
JP2001284628A (ja) * | 2000-03-29 | 2001-10-12 | Shindengen Electric Mfg Co Ltd | X線検出装置 |
DE10129763A1 (de) * | 2001-06-20 | 2003-01-09 | Siemens Ag | Festkörperstrahlungsdetektor und medizinische Untersuchungs- und/oder Behandlungseinrichtung |
KR100448448B1 (ko) * | 2001-07-12 | 2004-09-13 | 주식회사 디알텍 | X선 센서용 스위칭소자 및 그 제조방법 |
KR100732877B1 (ko) * | 2001-08-21 | 2007-06-27 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그의 제조 방법 |
JP3718770B2 (ja) * | 2002-01-11 | 2005-11-24 | 株式会社日立製作所 | アクティブマトリックス型の表示装置 |
US7009663B2 (en) * | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
US7053967B2 (en) | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
US7023503B2 (en) * | 2002-02-20 | 2006-04-04 | Planar Systems, Inc. | Image sensor with photosensitive thin film transistors |
US7408598B2 (en) * | 2002-02-20 | 2008-08-05 | Planar Systems, Inc. | Light sensitive display with selected interval of light sensitive elements |
US7372510B2 (en) * | 2002-03-01 | 2008-05-13 | Planar Systems, Inc. | Reflection resistant touch screens |
US7217254B2 (en) | 2002-09-20 | 2007-05-15 | Genzyme Corporation | Multi-pressure biocompatible agent delivery device and method |
US20060034492A1 (en) * | 2002-10-30 | 2006-02-16 | Roy Siegel | Hand recognition system |
US20080084374A1 (en) * | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
US20080048995A1 (en) * | 2003-02-20 | 2008-02-28 | Planar Systems, Inc. | Light sensitive display |
US6970386B2 (en) * | 2003-03-03 | 2005-11-29 | Emosyn America, Inc. | Method and apparatus for detecting exposure of a semiconductor circuit to ultra-violet light |
US7196334B2 (en) * | 2003-04-24 | 2007-03-27 | Koninklijke Philips Electronics N.V. | X-ray detector element |
US7054410B2 (en) * | 2003-05-15 | 2006-05-30 | Varian Medical Systems, Inc. | Multi energy x-ray imager |
US20050134749A1 (en) * | 2003-12-19 | 2005-06-23 | Adiel Abileah | Reflection resistant display |
US7773139B2 (en) * | 2004-04-16 | 2010-08-10 | Apple Inc. | Image sensor with photosensitive thin film transistors |
US7092481B2 (en) * | 2004-05-19 | 2006-08-15 | General Electric Company | Direct conversion energy discriminating CT detector |
US7304308B2 (en) * | 2005-02-16 | 2007-12-04 | Hologic, Inc. | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
US7122803B2 (en) * | 2005-02-16 | 2006-10-17 | Hologic, Inc. | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
US7233005B2 (en) * | 2005-02-16 | 2007-06-19 | Hologic, Inc. | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
US20070109239A1 (en) * | 2005-11-14 | 2007-05-17 | Den Boer Willem | Integrated light sensitive liquid crystal display |
EP1978563A3 (en) * | 2007-03-23 | 2012-10-24 | FUJIFILM Corporation | Radiation detector and method for producing photoconductive layer for recording thereof |
JP5070130B2 (ja) * | 2008-05-26 | 2012-11-07 | 富士フイルム株式会社 | 放射線検出器 |
KR20100082631A (ko) * | 2009-01-09 | 2010-07-19 | 삼성전자주식회사 | 엑스레이 디텍터 및 그 제조 방법 |
US9310923B2 (en) | 2010-12-03 | 2016-04-12 | Apple Inc. | Input device for touch sensitive devices |
US8928635B2 (en) | 2011-06-22 | 2015-01-06 | Apple Inc. | Active stylus |
US9329703B2 (en) | 2011-06-22 | 2016-05-03 | Apple Inc. | Intelligent stylus |
US8638320B2 (en) | 2011-06-22 | 2014-01-28 | Apple Inc. | Stylus orientation detection |
US9176604B2 (en) | 2012-07-27 | 2015-11-03 | Apple Inc. | Stylus device |
US9652090B2 (en) | 2012-07-27 | 2017-05-16 | Apple Inc. | Device for digital communication through capacitive coupling |
US9557845B2 (en) | 2012-07-27 | 2017-01-31 | Apple Inc. | Input device for and method of communication with capacitive devices through frequency variation |
US10048775B2 (en) | 2013-03-14 | 2018-08-14 | Apple Inc. | Stylus detection and demodulation |
US10845901B2 (en) | 2013-07-31 | 2020-11-24 | Apple Inc. | Touch controller architecture |
US10067618B2 (en) | 2014-12-04 | 2018-09-04 | Apple Inc. | Coarse scan and targeted active mode scan for touch |
US10474277B2 (en) | 2016-05-31 | 2019-11-12 | Apple Inc. | Position-based stylus communication |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4621275A (en) * | 1983-04-30 | 1986-11-04 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device |
DE4002429A1 (de) * | 1990-01-27 | 1991-08-01 | Philips Patentverwaltung | Sensormatrix |
DE4227096A1 (de) * | 1992-08-17 | 1994-02-24 | Philips Patentverwaltung | Röntgenbilddetektor |
US5319206A (en) * | 1992-12-16 | 1994-06-07 | E. I. Du Pont De Nemours And Company | Method and apparatus for acquiring an X-ray image using a solid state device |
US5498880A (en) * | 1995-01-12 | 1996-03-12 | E. I. Du Pont De Nemours And Company | Image capture panel using a solid state device |
-
1994
- 1994-07-20 GB GB9414639A patent/GB9414639D0/en active Pending
-
1995
- 1995-07-11 EP EP95922699A patent/EP0720778B1/en not_active Expired - Lifetime
- 1995-07-11 EP EP98200682A patent/EP0855746B1/en not_active Expired - Lifetime
- 1995-07-11 WO PCT/IB1995/000551 patent/WO1996002937A2/en active IP Right Grant
- 1995-07-11 DE DE69508372T patent/DE69508372T2/de not_active Expired - Lifetime
- 1995-07-11 JP JP50485396A patent/JP4388139B2/ja not_active Expired - Lifetime
- 1995-07-11 DE DE69526457T patent/DE69526457T2/de not_active Expired - Lifetime
- 1995-07-19 US US08/504,195 patent/US5598004A/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000035480A (ja) * | 1998-06-26 | 2000-02-02 | Ftni Inc | 放射線医学用間接x線画像検出器 |
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KR20180113618A (ko) * | 2016-03-31 | 2018-10-16 | 주식회사 뷰웍스 | 판독 동안 비례 전하 이득을 갖는 방사선 촬상 검출기 |
WO2019187729A1 (ja) * | 2018-03-27 | 2019-10-03 | 株式会社ジャパンディスプレイ | 指紋検出装置及び表示装置 |
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Also Published As
Publication number | Publication date |
---|---|
WO1996002937A3 (en) | 1996-03-07 |
JP4388139B2 (ja) | 2009-12-24 |
DE69508372T2 (de) | 1999-10-07 |
DE69508372D1 (de) | 1999-04-22 |
DE69526457D1 (de) | 2002-05-23 |
EP0855746B1 (en) | 2002-04-17 |
EP0855746A1 (en) | 1998-07-29 |
EP0720778A1 (en) | 1996-07-10 |
WO1996002937A2 (en) | 1996-02-01 |
EP0720778B1 (en) | 1999-03-17 |
US5598004A (en) | 1997-01-28 |
DE69526457T2 (de) | 2002-10-31 |
GB9414639D0 (en) | 1994-09-07 |
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