DE69424805T2 - Bildwandlersystem - Google Patents

Bildwandlersystem

Info

Publication number
DE69424805T2
DE69424805T2 DE69424805T DE69424805T DE69424805T2 DE 69424805 T2 DE69424805 T2 DE 69424805T2 DE 69424805 T DE69424805 T DE 69424805T DE 69424805 T DE69424805 T DE 69424805T DE 69424805 T2 DE69424805 T2 DE 69424805T2
Authority
DE
Germany
Prior art keywords
converter system
image converter
image
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69424805T
Other languages
English (en)
Other versions
DE69424805D1 (de
Inventor
Zhong Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
iFire Technology Inc
Original Assignee
1294339 Ontario Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 1294339 Ontario Inc filed Critical 1294339 Ontario Inc
Publication of DE69424805D1 publication Critical patent/DE69424805D1/de
Application granted granted Critical
Publication of DE69424805T2 publication Critical patent/DE69424805T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
DE69424805T 1994-07-27 1994-07-27 Bildwandlersystem Expired - Fee Related DE69424805T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CA1994/000407 WO1996003773A1 (en) 1994-07-27 1994-07-27 Radiation imaging panel

Publications (2)

Publication Number Publication Date
DE69424805D1 DE69424805D1 (de) 2000-07-06
DE69424805T2 true DE69424805T2 (de) 2000-12-07

Family

ID=4173024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69424805T Expired - Fee Related DE69424805T2 (de) 1994-07-27 1994-07-27 Bildwandlersystem

Country Status (6)

Country Link
US (1) US5869837A (de)
EP (1) EP0778983B1 (de)
JP (1) JP3457676B2 (de)
CA (1) CA2193649C (de)
DE (1) DE69424805T2 (de)
WO (1) WO1996003773A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997042661A1 (en) * 1996-05-08 1997-11-13 1294339 Ontario Inc. High resolution flat panel for radiation imaging
JPH11307756A (ja) 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
US6466266B1 (en) * 1998-07-28 2002-10-15 Eastman Kodak Company Active pixel sensor with shared row timing signals
JP4059463B2 (ja) * 1998-12-10 2008-03-12 株式会社島津製作所 放射線検出装置
FR2787960B1 (fr) * 1998-12-23 2001-03-16 Thomson Tubes Electroniques Detecteur d'image a amplificateurs d'acquisition de donnees integres
US6859511B2 (en) * 1999-03-12 2005-02-22 Hitachi, Ltd. X-ray sensor signal processor and x-ray computed tomography system using the same
KR100443902B1 (ko) * 1999-03-25 2004-08-09 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
JP3838806B2 (ja) * 1999-03-26 2006-10-25 株式会社東芝 信号増倍ｘ線撮像装置
CA2373651A1 (en) 1999-05-10 2000-11-16 Francois Lippens Energy selective detection systems
US6259098B1 (en) * 1999-05-17 2001-07-10 General Electric Company Low cost, low resolution interconnect for a solid-state x-ray detector
WO2001042813A1 (fr) * 1999-12-07 2001-06-14 Matsushita Electric Industrial Co., Ltd. Detecteur de rayons x
US6404851B1 (en) 2000-03-30 2002-06-11 General Electric Company Method and apparatus for automatic exposure control using localized capacitive coupling in a matrix-addressed imaging panel
US6855935B2 (en) * 2000-03-31 2005-02-15 Canon Kabushiki Kaisha Electromagnetic wave detector
US6956216B2 (en) * 2000-06-15 2005-10-18 Canon Kabushiki Kaisha Semiconductor device, radiation detection device, and radiation detection system
US7142240B1 (en) * 2000-07-17 2006-11-28 Psion Teklogix Systems, Inc. Active pixel sensor array reset
US6847039B2 (en) 2001-03-28 2005-01-25 Canon Kabushiki Kaisha Photodetecting device, radiation detecting device, and radiation imaging system
US6489619B2 (en) * 2001-04-27 2002-12-03 Xerox Corporation Pixel circuit with selectable capacitor load for multi-mode X-ray imaging
US6791091B2 (en) 2001-06-19 2004-09-14 Brian Rodricks Wide dynamic range digital imaging system and method
JP2003153088A (ja) * 2001-08-31 2003-05-23 Fuji Photo Film Co Ltd 信号検出方法および装置
KR100520382B1 (ko) * 2001-11-16 2005-10-11 비오이 하이디스 테크놀로지 주식회사 엑스레이 디텍터 및 그 제조방법
US6953934B2 (en) * 2002-03-06 2005-10-11 Canon Kabushiki Kaisha Radiation detection apparatus and system
US6777685B2 (en) * 2002-04-03 2004-08-17 General Electric Company Imaging array and methods for fabricating same
US6559506B1 (en) 2002-04-03 2003-05-06 General Electric Company Imaging array and methods for fabricating same
US6740884B2 (en) * 2002-04-03 2004-05-25 General Electric Company Imaging array and methods for fabricating same
KR100886973B1 (ko) * 2002-08-01 2009-03-04 하이디스 테크놀로지 주식회사 디지털 엑스레이 디텍터 및 그 제조 방법
US20060138339A1 (en) * 2002-11-27 2006-06-29 Fang Guang Y Amorphous selenium detector for tomotherapy and other image-guided radiotherapy systems
JP4307138B2 (ja) * 2003-04-22 2009-08-05 キヤノン株式会社 光電変換装置、及び光電変換装置の制御方法
JP4307230B2 (ja) * 2003-12-05 2009-08-05 キヤノン株式会社 放射線撮像装置及び放射線撮像方法
US7557355B2 (en) * 2004-09-30 2009-07-07 Canon Kabushiki Kaisha Image pickup apparatus and radiation image pickup apparatus
US7233005B2 (en) * 2005-02-16 2007-06-19 Hologic, Inc. Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging
JP2007104219A (ja) 2005-10-03 2007-04-19 Canon Inc 放射線撮影装置及びその制御方法、放射線撮影システム
JP2008098390A (ja) * 2006-10-12 2008-04-24 Fujifilm Corp 放射線画像検出器およびその駆動方法
KR101218089B1 (ko) * 2007-12-07 2013-01-18 엘지디스플레이 주식회사 디지털 엑스레이 디텍터 및 그 제조방법
KR101095086B1 (ko) 2010-02-03 2011-12-20 주식회사 디알텍 Ｘ-선 검출기의 화소 회로
DE102010013115A1 (de) * 2010-03-26 2011-09-29 Jules Hendrix Auslesesystem für Flachbildschirme-Röntgendetektoren unter Vermeidung von Dünnfilmtransistoren
US9348038B2 (en) 2010-09-13 2016-05-24 Thunder Bay Regional Institute Systems and methods for resetting photoconductive x-ray imaging detectors
EP2962309B1 (de) 2013-02-26 2022-02-16 Accuray, Inc. Elektromagnetisch betätigter mehrblatt-kollimator
US10007009B2 (en) 2015-04-07 2018-06-26 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor X-ray detector
CN108271415B (zh) 2015-04-07 2019-03-05 深圳帧观德芯科技有限公司 半导体x射线检测器
CN109037249B (zh) * 2017-06-12 2021-11-02 上海耕岩智能科技有限公司 一种影像侦测显示装置、器件及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130274A (ja) * 1983-12-19 1985-07-11 Toshiba Corp 固体撮像装置
EP0296603A3 (de) * 1987-06-26 1989-02-08 Canon Kabushiki Kaisha Photoelektrischer Umwandler
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
US5017989A (en) * 1989-12-06 1991-05-21 Xerox Corporation Solid state radiation sensor array panel
GB9115259D0 (en) * 1991-07-15 1991-08-28 Philips Electronic Associated An image detector
US5198673A (en) * 1992-01-23 1993-03-30 General Electric Company Radiation image detector with optical gain selenium photosensors
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5245191A (en) * 1992-04-14 1993-09-14 The Board Of Regents Of The University Of Arizona Semiconductor sensor for gamma-ray tomographic imaging system
DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
GB9414639D0 (en) * 1994-07-20 1994-09-07 Philips Electronics Uk Ltd An image detector

Also Published As

Publication number Publication date
EP0778983B1 (de) 2000-05-31
WO1996003773A1 (en) 1996-02-08
CA2193649C (en) 2003-01-21
DE69424805D1 (de) 2000-07-06
EP0778983A1 (de) 1997-06-18
CA2193649A1 (en) 1996-02-08
JP3457676B2 (ja) 2003-10-20
JPH10506230A (ja) 1998-06-16
US5869837A (en) 1999-02-09

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: IFIRE TECHNOLOGY INC., FORT SASKATCHEWAN, ALBERTA,

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee