JPH0936367A5 - - Google Patents

Info

Publication number
JPH0936367A5
JPH0936367A5 JP1996191409A JP19140996A JPH0936367A5 JP H0936367 A5 JPH0936367 A5 JP H0936367A5 JP 1996191409 A JP1996191409 A JP 1996191409A JP 19140996 A JP19140996 A JP 19140996A JP H0936367 A5 JPH0936367 A5 JP H0936367A5
Authority
JP
Japan
Prior art keywords
region
implanted
conductivity type
implanted region
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996191409A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0936367A (ja
Filing date
Publication date
Priority claimed from US08/499,624 external-priority patent/US5675166A/en
Application filed filed Critical
Publication of JPH0936367A publication Critical patent/JPH0936367A/ja
Publication of JPH0936367A5 publication Critical patent/JPH0936367A5/ja
Pending legal-status Critical Current

Links

JP8191409A 1995-07-07 1996-07-01 安定なしきい値電圧を有するｆｅｔおよびその製造方法 Pending JPH0936367A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/499,624 US5675166A (en) 1995-07-07 1995-07-07 FET with stable threshold voltage and method of manufacturing the same
US08/499,624 1995-07-07

Publications (2)

Publication Number Publication Date
JPH0936367A JPH0936367A (ja) 1997-02-07
JPH0936367A5 true JPH0936367A5 (show.php) 2004-07-15

Family

ID=23986023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8191409A Pending JPH0936367A (ja) 1995-07-07 1996-07-01 安定なしきい値電圧を有するｆｅｔおよびその製造方法

Country Status (6)

Country Link
US (2) US5675166A (show.php)
EP (1) EP0752722B1 (show.php)
JP (1) JPH0936367A (show.php)
CN (1) CN1141509A (show.php)
DE (1) DE69624174T2 (show.php)
TW (1) TW303520B (show.php)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955499A (ja) * 1995-08-11 1997-02-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5668024A (en) * 1996-07-17 1997-09-16 Taiwan Semiconductor Manufacturing Company CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation process
JPH1050988A (ja) * 1996-07-31 1998-02-20 Sharp Corp 絶縁ゲート型電界効果トランジスタ及びその製造方法
US5834355A (en) * 1996-12-31 1998-11-10 Intel Corporation Method for implanting halo structures using removable spacer
KR100223846B1 (ko) * 1997-05-28 1999-10-15 구본준 반도체 소자 및 그의 제조방법
DE19812945A1 (de) * 1998-03-24 1999-09-30 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
US6774001B2 (en) * 1998-10-13 2004-08-10 Stmicroelectronics, Inc. Self-aligned gate and method
US6232166B1 (en) * 1998-11-06 2001-05-15 Advanced Micro Devices, Inc. CMOS processing employing zero degree halo implant for P-channel transistor
US6211023B1 (en) * 1998-11-12 2001-04-03 United Microelectronics Corp. Method for fabricating a metal-oxide semiconductor transistor
US6198131B1 (en) * 1998-12-07 2001-03-06 United Microelectronics Corp. High-voltage metal-oxide semiconductor
FR2794898B1 (fr) 1999-06-11 2001-09-14 France Telecom Dispositif semi-conducteur a tension de seuil compensee et procede de fabrication
FR2796204B1 (fr) * 1999-07-07 2003-08-08 St Microelectronics Sa Transistor mosfet a canal court
US6168999B1 (en) * 1999-09-07 2001-01-02 Advanced Micro Devices, Inc. Method for fabricating high-performance submicron mosfet with lateral asymmetric channel and a lightly doped drain
US6426278B1 (en) * 1999-10-07 2002-07-30 International Business Machines Corporation Projection gas immersion laser dopant process (PGILD) fabrication of diffusion halos
US7192836B1 (en) * 1999-11-29 2007-03-20 Advanced Micro Devices, Inc. Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance
US6624035B1 (en) * 2000-03-13 2003-09-23 Advanced Micro Devices, Inc. Method of forming a hard mask for halo implants
US6433372B1 (en) 2000-03-17 2002-08-13 International Business Machines Corporation Dense multi-gated device design
US6344405B1 (en) * 2000-04-11 2002-02-05 Philips Electronics North America Corp. Transistors having optimized source-drain structures and methods for making the same
JP3831598B2 (ja) * 2000-10-19 2006-10-11 三洋電機株式会社 半導体装置とその製造方法
US6509241B2 (en) 2000-12-12 2003-01-21 International Business Machines Corporation Process for fabricating an MOS device having highly-localized halo regions
DE10148794B4 (de) * 2001-10-02 2005-11-17 Infineon Technologies Ag Verfahren zum Herstellen eines MOS-Transistors und MOS-Transistor
US20030062571A1 (en) * 2001-10-03 2003-04-03 Franca-Neto Luiz M. Low noise microwave transistor based on low carrier velocity dispersion control
US6756276B1 (en) * 2002-09-30 2004-06-29 Advanced Micro Devices, Inc. Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication
KR100953332B1 (ko) * 2002-12-31 2010-04-20 동부일렉트로닉스 주식회사 반도체 장치의 제조 방법
KR100981674B1 (ko) * 2003-04-29 2010-09-13 매그나칩 반도체 유한회사 반도체 소자 및 그의 제조방법
KR100487927B1 (ko) * 2003-07-21 2005-05-09 주식회사 하이닉스반도체 마그네틱 램의 형성방법
US7071069B2 (en) * 2003-12-22 2006-07-04 Chartered Semiconductor Manufacturing, Ltd Shallow amorphizing implant for gettering of deep secondary end of range defects
KR100574172B1 (ko) * 2003-12-23 2006-04-27 동부일렉트로닉스 주식회사 반도체 소자의 제조방법
KR100552808B1 (ko) * 2003-12-24 2006-02-20 동부아남반도체 주식회사 확산 소스/드레인 구조를 갖는 반도체 소자 및 그 제조 방법
US7397081B2 (en) * 2004-12-13 2008-07-08 International Business Machines Corporation Sidewall semiconductor transistors
DE102005004355B4 (de) * 2005-01-31 2008-12-18 Infineon Technologies Ag Halbleitereinrichtung und Verfahren zu deren Herstellung
EP1717850A1 (en) * 2005-04-29 2006-11-02 STMicroelectronics S.r.l. Method of manufacturing a lateral power MOS transistor
US7282406B2 (en) * 2006-03-06 2007-10-16 Semiconductor Companents Industries, L.L.C. Method of forming an MOS transistor and structure therefor
SG136058A1 (en) * 2006-03-10 2007-10-29 Chartered Semiconductor Mfg Integrated circuit system with double doped drain transistor
US8354718B2 (en) * 2007-05-22 2013-01-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including an arrangement for suppressing short channel effects
US8163619B2 (en) * 2009-03-27 2012-04-24 National Semiconductor Corporation Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone
KR101700572B1 (ko) * 2010-10-20 2017-02-01 삼성전자주식회사 저농도 채널 불순물 영역을 갖는 반도체 소자
KR101714613B1 (ko) * 2010-10-28 2017-03-10 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
JP2014036082A (ja) * 2012-08-08 2014-02-24 Renesas Electronics Corp 半導体装置およびその製造方法
CN104078360B (zh) * 2013-03-28 2016-11-23 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
US11488871B2 (en) * 2013-09-24 2022-11-01 Samar K. Saha Transistor structure with multiple halo implants having epitaxial layer over semiconductor-on-insulator substrate
US9847233B2 (en) 2014-07-29 2017-12-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and formation thereof
US9484417B1 (en) * 2015-07-22 2016-11-01 Globalfoundries Inc. Methods of forming doped transition regions of transistor structures
CN113410139B (zh) * 2020-07-02 2025-06-03 台积电(中国)有限公司 半导体结构及其形成方法
CN113871451B (zh) * 2021-09-24 2024-06-18 华虹半导体(无锡)有限公司 Dmos器件及其形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736862A (en) * 1980-08-13 1982-02-27 Toshiba Corp Semiconductor device
US5171700A (en) * 1991-04-01 1992-12-15 Sgs-Thomson Microelectronics, Inc. Field effect transistor structure and method
US5894158A (en) * 1991-09-30 1999-04-13 Stmicroelectronics, Inc. Having halo regions integrated circuit device structure
US5583067A (en) * 1993-01-22 1996-12-10 Intel Corporation Inverse T-gate semiconductor device with self-aligned punchthrough stops and method of fabrication
JPH0799315A (ja) * 1993-06-22 1995-04-11 Motorola Inc 半導体デバイスの対向するドープ領域のインターフェースにおけるキャリア濃度を制御する方法
US5371394A (en) * 1993-11-15 1994-12-06 Motorola, Inc. Double implanted laterally diffused MOS device and method thereof
US5372960A (en) * 1994-01-04 1994-12-13 Motorola, Inc. Method of fabricating an insulated gate semiconductor device
US5668024A (en) * 1996-07-17 1997-09-16 Taiwan Semiconductor Manufacturing Company CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation process
KR100205320B1 (ko) * 1996-10-25 1999-07-01 구본준 모스펫 및 그 제조방법

Similar Documents

Publication Publication Date Title
JPH0936367A5 (show.php)
JPH104198A5 (show.php)
EP0768715A3 (en) Graded-channel semiconductor device and method of manufacturing the same
TW345736B (en) Field-effect transistor and manufacture thereof
JPH1117169A5 (show.php)
EP1253634A3 (en) Semiconductor device
EP2367205A3 (en) Vertical junction field effect transistors and methods of producing the same
EP1083607A3 (en) High voltage SOI semiconductor device
WO2003100865A3 (en) Microwave field effect transistor structure
EP1085577A3 (en) Power field-effect transistor having a trench gate electrode and method of making the same
WO2002043117A3 (en) Trench gate fermi-threshold field effect transistors and methods of fabricating the same
EP1094525A3 (en) Field-effect semiconductor device having a trench gate electrode and method of making the same
EP1367659A3 (en) Organic field effect transistor
WO2002037569A3 (en) Trench gate mos semiconductor device
JP2002198529A5 (show.php)
WO2004053939A3 (en) Integrated circuit structure with improved ldmos design
EP1111687A3 (en) FET and its manufacturing process
KR970013429A (ko) 높은 브리크다운 전압을 갖는 탄화실리콘 트랜지스터
TW200509374A (en) Semiconductor device and manufacturing method thereof
KR880005693A (ko) Mosfet 구조물 및 이의 제조 방법
EP1143526A3 (en) Field effect transistor and method of manufacturing the same
JP2000223714A5 (show.php)
EP1152470A3 (en) Semiconductor device with LDD structure and process of manufacturing the same
JPH11233769A5 (ja) 半導体装置の作製方法
KR960026960A (ko) 비대칭 저전력 모스(mos) 소자