JPH09180443A - 半導体メモリ回路 - Google Patents

半導体メモリ回路

Info

Publication number
JPH09180443A
JPH09180443A JP7337279A JP33727995A JPH09180443A JP H09180443 A JPH09180443 A JP H09180443A JP 7337279 A JP7337279 A JP 7337279A JP 33727995 A JP33727995 A JP 33727995A JP H09180443 A JPH09180443 A JP H09180443A
Authority
JP
Japan
Prior art keywords
address
signal
shift
shift register
memory circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7337279A
Other languages
English (en)
Japanese (ja)
Inventor
Kazuko Inuzuka
和子 犬塚
Katsushi Nagaba
勝志 長場
Shigeo Oshima
成夫 大島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7337279A priority Critical patent/JPH09180443A/ja
Priority to TW085115516A priority patent/TW312766B/zh
Priority to US08/770,404 priority patent/US5777946A/en
Priority to EP96120772A priority patent/EP0782143B1/en
Priority to DE69622138T priority patent/DE69622138T2/de
Priority to KR1019960071474A priority patent/KR100228455B1/ko
Publication of JPH09180443A publication Critical patent/JPH09180443A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP7337279A 1995-12-25 1995-12-25 半導体メモリ回路 Pending JPH09180443A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP7337279A JPH09180443A (ja) 1995-12-25 1995-12-25 半導体メモリ回路
TW085115516A TW312766B (enExample) 1995-12-25 1996-12-16
US08/770,404 US5777946A (en) 1995-12-25 1996-12-20 Semiconductor memory circuit equipped with a column addressing circuit having a shift register
EP96120772A EP0782143B1 (en) 1995-12-25 1996-12-23 A semiconductor memory circuit equipped with a column addressing circuit having a shift register
DE69622138T DE69622138T2 (de) 1995-12-25 1996-12-23 Mit einer Spaltenadressierungsschaltung ausgestattete Halbleiterspeicherschaltung mit Schieberegister
KR1019960071474A KR100228455B1 (ko) 1995-12-25 1996-12-24 반도체 메모리 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7337279A JPH09180443A (ja) 1995-12-25 1995-12-25 半導体メモリ回路

Publications (1)

Publication Number Publication Date
JPH09180443A true JPH09180443A (ja) 1997-07-11

Family

ID=18307121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7337279A Pending JPH09180443A (ja) 1995-12-25 1995-12-25 半導体メモリ回路

Country Status (6)

Country Link
US (1) US5777946A (enExample)
EP (1) EP0782143B1 (enExample)
JP (1) JPH09180443A (enExample)
KR (1) KR100228455B1 (enExample)
DE (1) DE69622138T2 (enExample)
TW (1) TW312766B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4612139B2 (ja) * 2000-02-08 2011-01-12 富士通セミコンダクター株式会社 入力回路及びその入力回路を利用する半導体装置
KR100368132B1 (ko) 2000-03-27 2003-01-15 한국과학기술원 메모리 어드레싱 방법
JP2002366428A (ja) * 2001-06-06 2002-12-20 Mitsubishi Electric Corp メモリコントローラ
US6980030B1 (en) * 2003-06-26 2005-12-27 Xilinx, Inc. Embedded function units with decoding
KR20050082055A (ko) * 2004-02-17 2005-08-22 삼성전자주식회사 메모리 제어 장치 및 방법
US10346244B2 (en) * 2017-08-10 2019-07-09 Micron Technology, Inc. Shared address counters for multiple modes of operation in a memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624006A (en) * 1985-05-10 1986-11-18 Linear Technology Corporation Bidirectional shift register using parallel inverters with adjustable transconductance
DE3742514A1 (de) * 1986-12-24 1988-07-07 Mitsubishi Electric Corp Variable verzoegerungsschaltung
US4985872A (en) * 1989-06-23 1991-01-15 Vlsi Technology, Inc. Sequencing column select circuit for a random access memory
JP3080520B2 (ja) * 1993-09-21 2000-08-28 富士通株式会社 シンクロナスｄｒａｍ
JP3185568B2 (ja) * 1994-11-22 2001-07-11 日本電気株式会社 半導体記憶装置
US5598376A (en) * 1994-12-23 1997-01-28 Micron Technology, Inc. Distributed write data drivers for burst access memories

Also Published As

Publication number Publication date
KR100228455B1 (ko) 1999-11-01
EP0782143B1 (en) 2002-07-03
DE69622138T2 (de) 2002-12-12
KR970051298A (ko) 1997-07-29
TW312766B (enExample) 1997-08-11
DE69622138D1 (de) 2002-08-08
EP0782143A3 (en) 1998-06-24
EP0782143A2 (en) 1997-07-02
US5777946A (en) 1998-07-07

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