TW312766B - - Google Patents

Download PDF

Info

Publication number
TW312766B
TW312766B TW085115516A TW85115516A TW312766B TW 312766 B TW312766 B TW 312766B TW 085115516 A TW085115516 A TW 085115516A TW 85115516 A TW85115516 A TW 85115516A TW 312766 B TW312766 B TW 312766B
Authority
TW
Taiwan
Prior art keywords
address
signal
shift register
circuit
selection mode
Prior art date
Application number
TW085115516A
Other languages
English (en)
Chinese (zh)
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW312766B publication Critical patent/TW312766B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/04Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW085115516A 1995-12-25 1996-12-16 TW312766B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7337279A JPH09180443A (ja) 1995-12-25 1995-12-25 半導体メモリ回路

Publications (1)

Publication Number Publication Date
TW312766B true TW312766B (enExample) 1997-08-11

Family

ID=18307121

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115516A TW312766B (enExample) 1995-12-25 1996-12-16

Country Status (6)

Country Link
US (1) US5777946A (enExample)
EP (1) EP0782143B1 (enExample)
JP (1) JPH09180443A (enExample)
KR (1) KR100228455B1 (enExample)
DE (1) DE69622138T2 (enExample)
TW (1) TW312766B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4612139B2 (ja) * 2000-02-08 2011-01-12 富士通セミコンダクター株式会社 入力回路及びその入力回路を利用する半導体装置
KR100368132B1 (ko) 2000-03-27 2003-01-15 한국과학기술원 메모리 어드레싱 방법
JP2002366428A (ja) * 2001-06-06 2002-12-20 Mitsubishi Electric Corp メモリコントローラ
US6980030B1 (en) * 2003-06-26 2005-12-27 Xilinx, Inc. Embedded function units with decoding
KR20050082055A (ko) * 2004-02-17 2005-08-22 삼성전자주식회사 메모리 제어 장치 및 방법
US10346244B2 (en) * 2017-08-10 2019-07-09 Micron Technology, Inc. Shared address counters for multiple modes of operation in a memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624006A (en) * 1985-05-10 1986-11-18 Linear Technology Corporation Bidirectional shift register using parallel inverters with adjustable transconductance
DE3742514A1 (de) * 1986-12-24 1988-07-07 Mitsubishi Electric Corp Variable verzoegerungsschaltung
US4985872A (en) * 1989-06-23 1991-01-15 Vlsi Technology, Inc. Sequencing column select circuit for a random access memory
JP3080520B2 (ja) * 1993-09-21 2000-08-28 富士通株式会社 シンクロナスdram
JP3185568B2 (ja) * 1994-11-22 2001-07-11 日本電気株式会社 半導体記憶装置
US5598376A (en) * 1994-12-23 1997-01-28 Micron Technology, Inc. Distributed write data drivers for burst access memories

Also Published As

Publication number Publication date
KR100228455B1 (ko) 1999-11-01
JPH09180443A (ja) 1997-07-11
EP0782143B1 (en) 2002-07-03
EP0782143A3 (en) 1998-06-24
KR970051298A (ko) 1997-07-29
US5777946A (en) 1998-07-07
DE69622138T2 (de) 2002-12-12
DE69622138D1 (de) 2002-08-08
EP0782143A2 (en) 1997-07-02

Similar Documents

Publication Publication Date Title
US6078546A (en) Synchronous semiconductor memory device with double data rate scheme
TW564437B (en) Semiconductor memory device having data masking pin and memory system including the same
US7404018B2 (en) Read latency control circuit
TW426857B (en) Semiconductor integrated circuit memory
US6061295A (en) Integrated circuit memory devices having time compensated column selection capability for improving write operation reliability
JP3535788B2 (ja) 半導体記憶装置
JP3177094B2 (ja) 半導体記憶装置
EP1040404A1 (en) Method and apparatus for coupling signals between two circuits operating in different clock domains
TW296434B (enExample)
TW312766B (enExample)
TW317635B (enExample)
TW308691B (enExample)
EP0521165A1 (en) Semiconductor storing device
TW378329B (en) Semiconductor device and semiconductor memory device
TW440863B (en) Data transmission circuitry of a synchronous semiconductor memory device
TW517460B (en) Synchronous circuit for generating internal signal synchronized to external signal
KR100572845B1 (ko) 반도체 집적 회로
TW425566B (en) A multi-bank testing apparatus for a synchronous dram
TW392172B (en) Synchronous semiconductor memory device
TW311278B (en) Semiconductor memory device
EP0325105B1 (en) Multiport memory
KR890010914A (ko) 시리얼 액세스 메모리로 이루어진 반도체 기억장치
TW461185B (en) Circuit of generating cycle for semiconductor test apparatus
JPS6220632B2 (enExample)
TW425574B (en) A semiconductor memory device having a plurality of memory blocks

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees