JPH09139437A5 - - Google Patents

Info

Publication number
JPH09139437A5
JPH09139437A5 JP1996298220A JP29822096A JPH09139437A5 JP H09139437 A5 JPH09139437 A5 JP H09139437A5 JP 1996298220 A JP1996298220 A JP 1996298220A JP 29822096 A JP29822096 A JP 29822096A JP H09139437 A5 JPH09139437 A5 JP H09139437A5
Authority
JP
Japan
Prior art keywords
layer
silicon dioxide
oxidizing
semiconductor substrate
nitrided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996298220A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09139437A (ja
JP4001960B2 (ja
Filing date
Publication date
Application filed filed Critical
Publication of JPH09139437A publication Critical patent/JPH09139437A/ja
Publication of JPH09139437A5 publication Critical patent/JPH09139437A5/ja
Application granted granted Critical
Publication of JP4001960B2 publication Critical patent/JP4001960B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP29822096A 1995-11-03 1996-10-21 窒化酸化物誘電体層を有する半導体素子の製造方法 Expired - Fee Related JP4001960B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55245195A 1995-11-03 1995-11-03
US552451 1995-11-03

Publications (3)

Publication Number Publication Date
JPH09139437A JPH09139437A (ja) 1997-05-27
JPH09139437A5 true JPH09139437A5 (enExample) 2004-10-14
JP4001960B2 JP4001960B2 (ja) 2007-10-31

Family

ID=24205400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29822096A Expired - Fee Related JP4001960B2 (ja) 1995-11-03 1996-10-21 窒化酸化物誘電体層を有する半導体素子の製造方法

Country Status (3)

Country Link
US (1) US5885870A (enExample)
JP (1) JP4001960B2 (enExample)
KR (1) KR970030859A (enExample)

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