JPH09139095A5 - - Google Patents

Info

Publication number
JPH09139095A5
JPH09139095A5 JP1996236900A JP23690096A JPH09139095A5 JP H09139095 A5 JPH09139095 A5 JP H09139095A5 JP 1996236900 A JP1996236900 A JP 1996236900A JP 23690096 A JP23690096 A JP 23690096A JP H09139095 A5 JPH09139095 A5 JP H09139095A5
Authority
JP
Japan
Prior art keywords
word line
data
circuit
register
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996236900A
Other languages
English (en)
Japanese (ja)
Other versions
JP3980094B2 (ja
JPH09139095A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP23690096A priority Critical patent/JP3980094B2/ja
Priority claimed from JP23690096A external-priority patent/JP3980094B2/ja
Publication of JPH09139095A publication Critical patent/JPH09139095A/ja
Publication of JPH09139095A5 publication Critical patent/JPH09139095A5/ja
Application granted granted Critical
Publication of JP3980094B2 publication Critical patent/JP3980094B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP23690096A 1995-09-13 1996-09-06 不揮発性半導体記憶装置 Expired - Fee Related JP3980094B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23690096A JP3980094B2 (ja) 1995-09-13 1996-09-06 不揮発性半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23484695 1995-09-13
JP7-234846 1995-09-13
JP23690096A JP3980094B2 (ja) 1995-09-13 1996-09-06 不揮発性半導体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006314520A Division JP4245629B2 (ja) 1995-09-13 2006-11-21 不揮発性半導体記憶装置の動作方法
JP2007103867A Division JP2007220291A (ja) 1995-09-13 2007-04-11 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH09139095A JPH09139095A (ja) 1997-05-27
JPH09139095A5 true JPH09139095A5 (enrdf_load_stackoverflow) 2004-09-16
JP3980094B2 JP3980094B2 (ja) 2007-09-19

Family

ID=26531795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23690096A Expired - Fee Related JP3980094B2 (ja) 1995-09-13 1996-09-06 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JP3980094B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100566465B1 (ko) * 1995-01-31 2006-03-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
JP2002260391A (ja) * 2001-03-02 2002-09-13 Hitachi Ltd 半導体記憶装置及びその読み出し方法
JP4357331B2 (ja) 2004-03-24 2009-11-04 東芝メモリシステムズ株式会社 マイクロプロセッサブートアップ制御装置、及び情報処理システム
JP4739940B2 (ja) * 2005-12-21 2011-08-03 ソリッド ステート ストレージ ソリューションズ エルエルシー 不揮発性メモリ
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
KR100816161B1 (ko) * 2007-01-23 2008-03-21 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
US7916536B2 (en) * 2007-07-26 2011-03-29 Micron Technology, Inc. Programming based on controller performance requirements
JP5086972B2 (ja) * 2008-11-06 2012-11-28 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置のためのページバッファ回路とその制御方法
JP4719290B2 (ja) * 2009-06-15 2011-07-06 東芝メモリシステムズ株式会社 情報処理システム
KR101634340B1 (ko) * 2009-11-03 2016-06-28 삼성전자주식회사 반도체 메모리 장치의 프로그램 방법
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system

Similar Documents

Publication Publication Date Title
TW389909B (en) Nonvolatile semiconductor memory device and its usage
KR100256616B1 (ko) 불휘발성 반도체 기억장치
US7215568B2 (en) Resistive memory arrangement
US5862099A (en) Non-volatile programmable memory having a buffering capability and method of operation thereof
KR100721295B1 (ko) 다중 비트 정보를 기록하는 불휘발성 메모리 회로
US5262984A (en) Non-volatile memory device capable of storing multi-state data
US6999365B2 (en) Semiconductor memory device and current mirror circuit
US6577530B2 (en) Semiconductor memory device having memory cells each capable of storing three or more values
US4367540A (en) Dynamic memory with an interchangeable pair of data lines and sense amplifiers
US4543647A (en) Electrically programmable non-volatile semiconductor memory device
JPS6161198B2 (enrdf_load_stackoverflow)
KR19990072706A (ko) 반도체기억장치
US6477092B2 (en) Level shifter of nonvolatile semiconductor memory
JPH09139095A5 (enrdf_load_stackoverflow)
US6137719A (en) Nonvolatile semiconductor memory device storing multi-bit data
JP2573380B2 (ja) 不揮発性半導体メモリ
KR100491912B1 (ko) 불휘발성 반도체 메모리
US7668011B2 (en) Serial flash memory device and precharging method thereof
EP0638906A2 (en) Non-volatile semiconductor memory
US20090003041A1 (en) Semiconductor memory device and read method thereof
JPH04315888A (ja) 半導体記憶装置
KR970051342A (ko) 불휘발성 반도체 메모리 장치
JP2004014052A (ja) 不揮発性半導体記憶装置
EP0278391A2 (en) Memory system
JP2590701B2 (ja) 半導体記憶装置