JPH0821239B2 - ダイナミック型半導体記憶装置およびそのテスト方法 - Google Patents

ダイナミック型半導体記憶装置およびそのテスト方法

Info

Publication number
JPH0821239B2
JPH0821239B2 JP63290705A JP29070588A JPH0821239B2 JP H0821239 B2 JPH0821239 B2 JP H0821239B2 JP 63290705 A JP63290705 A JP 63290705A JP 29070588 A JP29070588 A JP 29070588A JP H0821239 B2 JPH0821239 B2 JP H0821239B2
Authority
JP
Japan
Prior art keywords
data
memory cells
memory cell
bit line
data transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63290705A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02137185A (ja
Inventor
正樹 熊野谷
勝己 堂阪
康弘 小西
隆宏 小松
好永 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63290705A priority Critical patent/JPH0821239B2/ja
Priority to CN89108132A priority patent/CN1014659B/zh
Priority to KR1019890016243A priority patent/KR930003251B1/ko
Publication of JPH02137185A publication Critical patent/JPH02137185A/ja
Priority to US07/739,736 priority patent/US5208778A/en
Publication of JPH0821239B2 publication Critical patent/JPH0821239B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP63290705A 1988-11-16 1988-11-16 ダイナミック型半導体記憶装置およびそのテスト方法 Expired - Lifetime JPH0821239B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63290705A JPH0821239B2 (ja) 1988-11-16 1988-11-16 ダイナミック型半導体記憶装置およびそのテスト方法
CN89108132A CN1014659B (zh) 1988-11-16 1989-10-20 动态半导体存储装置
KR1019890016243A KR930003251B1 (ko) 1988-11-16 1989-11-09 다이나믹형 반도체기억장치와 그 기능 테스트장치 및 테스트방법
US07/739,736 US5208778A (en) 1988-11-16 1991-07-30 Dynamic-type semiconductor memory device operable in test mode and method of testing functions thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63290705A JPH0821239B2 (ja) 1988-11-16 1988-11-16 ダイナミック型半導体記憶装置およびそのテスト方法

Publications (2)

Publication Number Publication Date
JPH02137185A JPH02137185A (ja) 1990-05-25
JPH0821239B2 true JPH0821239B2 (ja) 1996-03-04

Family

ID=17759448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63290705A Expired - Lifetime JPH0821239B2 (ja) 1988-11-16 1988-11-16 ダイナミック型半導体記憶装置およびそのテスト方法

Country Status (3)

Country Link
JP (1) JPH0821239B2 (zh)
KR (1) KR930003251B1 (zh)
CN (1) CN1014659B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300033B1 (ko) * 1998-02-03 2001-10-19 김영환 반도체메모리회로
JP2003317499A (ja) * 2002-04-26 2003-11-07 Mitsubishi Electric Corp 半導体記憶装置およびそれを用いたメモリシステム
US7073100B2 (en) * 2002-11-11 2006-07-04 International Business Machines Corporation Method for testing embedded DRAM arrays
DE10358026B3 (de) * 2003-12-11 2005-05-19 Infineon Technologies Ag Verfahren zur Verbesserung des Lesesignals in einem Speicher mit passiven Speicherelementen
CN100401371C (zh) * 2004-02-10 2008-07-09 恩益禧电子股份有限公司 能够实现高速访问的图像存储器结构
CN102842344B (zh) * 2012-08-24 2015-04-01 湖北航天技术研究院计量测试技术研究所 Eeprom读写周期时间的测试方法
KR102166731B1 (ko) * 2013-05-31 2020-10-16 에스케이하이닉스 주식회사 데이터 전달회로 및 이를 포함하는 메모리
CN103839592B (zh) * 2014-03-05 2017-06-06 上海华虹宏力半导体制造有限公司 用于嵌入式快闪存储器的内建自测试方法及装置
CN115798562B (zh) * 2023-02-13 2023-04-28 长鑫存储技术有限公司 一种存储阵列故障检测方法、装置和存储介质
CN116564400B (zh) * 2023-07-07 2023-11-28 长鑫存储技术有限公司 半导体存储装置的可测试性电路和数据测试方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748317B2 (ja) * 1987-10-01 1995-05-24 日本電気株式会社 半導体メモリ検査方式

Also Published As

Publication number Publication date
JPH02137185A (ja) 1990-05-25
CN1042792A (zh) 1990-06-06
KR930003251B1 (ko) 1993-04-24
CN1014659B (zh) 1991-11-06
KR900008517A (ko) 1990-06-04

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