JPH08107092A - Soi基板の製造方法 - Google Patents
Soi基板の製造方法Info
- Publication number
- JPH08107092A JPH08107092A JP27417794A JP27417794A JPH08107092A JP H08107092 A JPH08107092 A JP H08107092A JP 27417794 A JP27417794 A JP 27417794A JP 27417794 A JP27417794 A JP 27417794A JP H08107092 A JPH08107092 A JP H08107092A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- active substrate
- grinding
- soi substrate
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000227 grinding Methods 0.000 claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000004575 stone Substances 0.000 claims 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 18
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27417794A JPH08107092A (ja) | 1994-09-30 | 1994-09-30 | Soi基板の製造方法 |
TW85100499A TW284893B (en, 2012) | 1994-09-30 | 1996-01-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27417794A JPH08107092A (ja) | 1994-09-30 | 1994-09-30 | Soi基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08107092A true JPH08107092A (ja) | 1996-04-23 |
Family
ID=17538114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27417794A Pending JPH08107092A (ja) | 1994-09-30 | 1994-09-30 | Soi基板の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH08107092A (en, 2012) |
TW (1) | TW284893B (en, 2012) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000173961A (ja) * | 1998-12-01 | 2000-06-23 | Sharp Corp | 半導体装置の製造方法および製造装置 |
JP2005116614A (ja) * | 2003-10-03 | 2005-04-28 | Disco Abrasive Syst Ltd | 積層ウェーハの加工方法 |
JP2010245254A (ja) * | 2009-04-06 | 2010-10-28 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2010245167A (ja) * | 2009-04-02 | 2010-10-28 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2011142201A (ja) * | 2010-01-07 | 2011-07-21 | Okamoto Machine Tool Works Ltd | 半導体基板の平坦化加工装置および平坦化加工方法 |
US8535117B2 (en) | 2009-12-03 | 2013-09-17 | Ebara Corporation | Method and apparatus for polishing a substrate having a grinded back surface |
JP2016058518A (ja) * | 2014-09-09 | 2016-04-21 | 株式会社ディスコ | 加工方法 |
JP2017170541A (ja) * | 2016-03-22 | 2017-09-28 | 株式会社東京精密 | 面取り装置及び面取り方法 |
JP2017177251A (ja) * | 2016-03-29 | 2017-10-05 | 株式会社東京精密 | 面取り装置及び面取り方法 |
JP2021049638A (ja) * | 2020-12-01 | 2021-04-01 | 株式会社東京精密 | 面取り装置及び面取り方法 |
JP2022066282A (ja) * | 2020-12-01 | 2022-04-28 | 株式会社東京精密 | 面取り装置及び面取り方法 |
-
1994
- 1994-09-30 JP JP27417794A patent/JPH08107092A/ja active Pending
-
1996
- 1996-01-16 TW TW85100499A patent/TW284893B/zh active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000173961A (ja) * | 1998-12-01 | 2000-06-23 | Sharp Corp | 半導体装置の製造方法および製造装置 |
JP2005116614A (ja) * | 2003-10-03 | 2005-04-28 | Disco Abrasive Syst Ltd | 積層ウェーハの加工方法 |
JP2010245167A (ja) * | 2009-04-02 | 2010-10-28 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2010245254A (ja) * | 2009-04-06 | 2010-10-28 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
US8535117B2 (en) | 2009-12-03 | 2013-09-17 | Ebara Corporation | Method and apparatus for polishing a substrate having a grinded back surface |
JP2011142201A (ja) * | 2010-01-07 | 2011-07-21 | Okamoto Machine Tool Works Ltd | 半導体基板の平坦化加工装置および平坦化加工方法 |
JP2016058518A (ja) * | 2014-09-09 | 2016-04-21 | 株式会社ディスコ | 加工方法 |
JP2017170541A (ja) * | 2016-03-22 | 2017-09-28 | 株式会社東京精密 | 面取り装置及び面取り方法 |
JP2017177251A (ja) * | 2016-03-29 | 2017-10-05 | 株式会社東京精密 | 面取り装置及び面取り方法 |
JP2021049638A (ja) * | 2020-12-01 | 2021-04-01 | 株式会社東京精密 | 面取り装置及び面取り方法 |
JP2022066282A (ja) * | 2020-12-01 | 2022-04-28 | 株式会社東京精密 | 面取り装置及び面取り方法 |
Also Published As
Publication number | Publication date |
---|---|
TW284893B (en, 2012) | 1996-09-01 |
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