JPH0799177A - Immersion treatment apparatus for substrate - Google Patents
Immersion treatment apparatus for substrateInfo
- Publication number
- JPH0799177A JPH0799177A JP14593994A JP14593994A JPH0799177A JP H0799177 A JPH0799177 A JP H0799177A JP 14593994 A JP14593994 A JP 14593994A JP 14593994 A JP14593994 A JP 14593994A JP H0799177 A JPH0799177 A JP H0799177A
- Authority
- JP
- Japan
- Prior art keywords
- treatment
- processing
- liquid
- substrate
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、基板処理装置の浸漬処
理部において半導体ウエハや液晶用ガラス基板等の薄板
状の基板(以下単に基板と称する)を表面処理するのに
用いられる基板の浸漬処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to immersion of a substrate used for surface-treating a thin substrate (hereinafter simply referred to as a substrate) such as a semiconductor wafer or a glass substrate for liquid crystal in an immersion treatment section of a substrate processing apparatus. Regarding a processing device.
【0002】[0002]
【従来の技術】上記基板処理装置としては、従来より例
えば図19に示すものがあり、その浸漬処理部165に
おいて用いられる基板の浸漬処理装置としては、図20
に示すもの(以下従来例1という)、あるいは、特開平
4−42531号公報に開示されたもので、図21に示
すもの(以下従来例2という)が知られている。ここで
図19は基板処理装置全体の平面図である。2. Description of the Related Art A conventional substrate processing apparatus shown in FIG. 19, for example, is shown in FIG. 20, and a substrate immersion processing apparatus used in the immersion processing section 165 is shown in FIG.
21 (hereinafter referred to as conventional example 1) or the one disclosed in Japanese Patent Laid-Open No. 4-42531 and shown in FIG. 21 (hereinafter referred to as conventional example 2) is known. Here, FIG. 19 is a plan view of the entire substrate processing apparatus.
【0003】この基板処理装置150は、図19に示す
ように、基板Wを収容したカセットCの搬入部151
と、カセットCから基板Wを取り出す基板取出部160
と、複数の基板Wを一括保持して搬送する基板搬送ロボ
ット175と、基板搬送ロボット175のチャックハン
ドを洗浄するチャック洗浄部163と、当該ロボット1
75で保持した複数の基板Wを浸漬して順次処理する複
数の浸漬処理部165と、浸漬処理部165の後側に配
置された乾燥部170と、カセットC内へ処理済みの基
板Wを収納する基板収納部180と、基板Wを収納した
カセットCを搬出する搬出部152とから構成されてい
る。As shown in FIG. 19, this substrate processing apparatus 150 has a loading section 151 for a cassette C containing a substrate W.
And a substrate take-out section 160 for taking out the substrate W from the cassette C
A substrate transfer robot 175 that collectively holds and transfers a plurality of substrates W, a chuck cleaning unit 163 that cleans a chuck hand of the substrate transfer robot 175, and the robot 1
A plurality of dipping processing units 165 that dip and sequentially process the plurality of substrates W held at 75, a drying unit 170 disposed on the rear side of the dipping processing unit 165, and the processed substrates W are stored in the cassette C. And a carry-out section 152 for carrying out the cassette C containing the substrate W.
【0004】そして上記浸漬処理部165には、例えば
図20(A)(B)に示すような浸漬処理装置が配置され、
各種の表面処理をなすように構成されている。図20
(A)は基板Wを複数種の処理液による表面処理(以下薬
液処理という)をするための基板の浸漬処理装置であ
り、図20(B)は当該基板Wを純水DW によるリンス処
理(以下純水処理という)をするための浸漬処理装置で
ある。これらの浸漬処理装置は、上記浸漬処理部165
(165a〜165f)のいずれかに適宜配置される。The dipping treatment unit 165 is provided with a dipping treatment device as shown in FIGS. 20 (A) and 20 (B), for example.
It is configured to perform various surface treatments. Figure 20
FIG. 20A shows a substrate dipping treatment apparatus for performing surface treatment (hereinafter referred to as chemical treatment) on a substrate W with a plurality of types of treatment liquids, and FIG. 20B shows a rinse treatment of the substrate W with pure water D W. This is an immersion treatment device for performing (hereinafter referred to as pure water treatment). These immersion treatment devices are the same as the immersion treatment unit 165.
It is appropriately arranged in any of (165a to 165f).
【0005】図20(A)の浸漬処理装置は、処理液中に
基板Wを浸漬して表面処理をするオーバーフロー型の基
板処理槽101aと、基板処理槽101aに連結した処
理液供給路107と、処理液供給路107に処理液導入
弁108、フィルタ110、及び圧送ポンプ115を順
に介して連通した処理液貯留容器106と、基板処理槽
101aよりオーバーフローした処理液を処理液貯留容
器106に回収する回収路142aと、処理液供給路1
07と回収路142aとを開閉可能に連通する給排切換
弁113aとを具備して成り、薬液処理に際して基板処
理槽101aからオーバーフローした処理液を処理液貯
留容器6に還流させるように構成されている。The immersion processing apparatus shown in FIG. 20A includes an overflow type substrate processing bath 101a for immersing a substrate W in a processing liquid for surface treatment, and a processing liquid supply path 107 connected to the substrate processing bath 101a. The processing liquid storage container 106 communicating with the processing liquid supply passage 107 through the processing liquid introduction valve 108, the filter 110, and the pressure feed pump 115 in order, and the processing liquid overflowing from the substrate processing bath 101a is collected in the processing liquid storage container 106. Recovery passage 142a and processing liquid supply passage 1
07 is provided with a supply / exhaust switching valve 113a that opens and closes the recovery passage 142a, and is configured to return the processing liquid overflowing from the substrate processing bath 101a to the processing liquid storage container 6 during the chemical liquid processing. There is.
【0006】また、図20(B)の浸漬処理装置は、オー
バーフロー型の基板洗浄槽101bと、基板洗浄槽10
1bに連結した純水供給路103と、純水供給路103
に設けた純水導入弁127と、基板洗浄槽101bより
オーバーフローした純水を排水ドレン143に導出する
排水路142bと、純水供給路103と排水路142b
とを開閉可能に連通する給排切換弁113bとを具備し
て成り、純水処理に際して基板洗浄槽101bからオー
バーフローした排水をドレン143に排出するように構
成されている。Further, the immersion treatment apparatus of FIG. 20 (B) has an overflow type substrate cleaning tank 101b and a substrate cleaning tank 10
Pure water supply path 103 connected to 1b and pure water supply path 103
A pure water introduction valve 127, a drain passage 142b for leading the pure water overflowing from the substrate cleaning tank 101b to a drain drain 143, a pure water supply passage 103 and a drain passage 142b.
And a supply / exhaust switching valve 113b that communicates with each other in an openable / closable manner, and is configured to discharge the drainage overflowing from the substrate cleaning tank 101b to the drain 143 during pure water treatment.
【0007】一方、従来例2は図21に示すように、単
一の基板処理槽101内に複数種の処理液102を順次
供給して基板Wの表面処理を行うようにしたものであ
る。即ち、処理液102中に複数の基板Wを浸漬して基
板Wの表面処理をなすオーバーフロー型の基板処理槽1
01と、基板処理槽101の下部より複数種の処理液1
02を供給する処理液供給路103と、処理液供給路1
03にそれぞれ処理液導入弁108A〜108C及び流量
調節器107A〜107Cを介して連通した複数個の処理
液貯留容器106A〜106Cと、純水導入弁108D及
び流量調節器107Dを介して連通した純水供給源10
6Dを備え、各導入弁108A〜108Dを選択的に開閉
制御して所定の処理液QA〜QCを基板処理槽101へ供
給するように構成されている。On the other hand, in the conventional example 2, as shown in FIG. 21, the surface treatment of the substrate W is performed by successively supplying a plurality of types of treatment liquids 102 into a single substrate treatment bath 101. That is, the overflow-type substrate processing bath 1 in which a plurality of substrates W are immersed in the processing liquid 102 for surface treatment of the substrates W
01 and a plurality of types of processing liquids 1 from the bottom of the substrate processing bath 101.
02, a processing liquid supply path 103, and a processing liquid supply path 1
Each 03 process liquid inlet valve 108 A -108 C and flow controllers 107 A to 107 and a plurality of the processing liquid storage container 106 A - 106 C which communicates via a C, pure water introducing valve 108 D and a flow regulator Pure water supply source 10 connected via 107 D
Includes a 6 D, and is configured with the inlet valve 108 A -108 D selectively open and close controlled to a predetermined processing liquid Q A to Q C to supply to the substrate processing chamber 101.
【0008】上記処理液貯留容器106A〜106Cのう
ち、例えば処理液貯留容器106Aには過酸化水素QA、
106Bには塩酸QB、106Cにはフッ化水素のような
エッチング剤QC などが貯溜されている。そして、基板
処理槽101はこれら複数種の表面処理毎に処理液10
2の置換が可能なオーバーフロー型の処理槽として構成
され、オーバーフローした処理液はドレン(図示省略)へ
排出される。[0008] Among the above-described processing liquid storage container 106 A - 106 C, for example, the processing liquid storage container 106 A hydrogen peroxide Q A,
The 106 B in hydrochloric Q B, 106 C such etchants Q C, such as hydrogen fluoride are reservoir. The substrate processing bath 101 is provided with the treatment liquid 10 for each of these plural types of surface treatments.
It is configured as an overflow type processing tank capable of replacing 2 and the overflowed processing solution is discharged to a drain (not shown).
【0009】[0009]
【発明が解決しようとする課題】上記基板処理装置15
0は、各浸漬処理部165a〜165fのそれぞれに図
20(A)(B)の浸漬処理装置が配置されることから、装
置全体が大型化するという難点がある。また、従来例2
は複数の処理液による薬液処理ごとに、基板処理槽10
1からオーバーフローした処理液をドレンに廃棄するの
で、処理液の消費量が多くなり、基板処理装置全体のラ
ンニングコストは高価になる。本発明は、このような事
情に鑑みてなされたもので、基板処理装置が大型化する
のを防止し、併せてランニングコストの低減を図ること
を技術的課題とする。The substrate processing apparatus 15 described above.
No. 0 has the drawback that the size of the entire apparatus increases because the immersion processing apparatuses of FIGS. 20 (A) and 20 (B) are arranged in each of the immersion processing units 165a to 165f. In addition, conventional example 2
Is a substrate processing bath 10 for each chemical treatment with a plurality of treatment liquids.
Since the processing liquid overflowing from No. 1 is discarded in the drain, the consumption amount of the processing liquid increases and the running cost of the entire substrate processing apparatus becomes expensive. The present invention has been made in view of such circumstances, and it is a technical object to prevent the substrate processing apparatus from increasing in size and reduce the running cost.
【0010】[0010]
【課題を解決するための手段】上記課題を解決するため
に、本発明は以下のように構成される。請求項1の発明
は、処理液中に基板を浸漬して基板の表面処理をなすオ
ーバーフロー型の基板処理槽と、上記基板処理槽に連結
した処理液供給路と、上記処理液供給路に処理液導入弁
及び圧送ポンプを順に介して連通した処理液貯留容器
と、上記処理液供給路に純水導入弁を介して連通した純
水供給路と、上記基板処理槽よりオーバーフローした排
液を排液ドレンに導出する排液路とを具備して成る基板
の浸漬処理装置において、上記排液路を分岐して一方は
排液弁を介して排液ドレンに連通するとともに、他方は
処理液回収路として処理液回収弁を介して上記処理液貯
留容器に連通し、薬液処理に際してオーバーフローした
処理液を回収して上記基板処理槽に還流させることを特
徴とするものである。In order to solve the above problems, the present invention is configured as follows. According to a first aspect of the present invention, an overflow type substrate processing bath for surface-treating a substrate by immersing the substrate in the processing liquid, a processing liquid supply passage connected to the substrate processing bath, and a processing liquid supply passage are processed. A treatment liquid storage container that communicates with the liquid introduction valve and the pressure pump in this order, a pure water supply passage that communicates with the treatment liquid supply passage through a pure water introduction valve, and a drainage liquid that overflows from the substrate treatment tank is discharged. In a substrate immersion processing apparatus comprising a drainage channel leading to a liquid drain, the drainage channel is branched so that one communicates with the drainage drain via a drain valve and the other recovers the treatment liquid. A passage is communicated with the treatment liquid storage container via a treatment liquid recovery valve, and the treatment liquid overflowed during the chemical treatment is recovered and returned to the substrate treatment tank.
【0011】請求項2の発明は、請求項1に記載の浸漬
処理装置において、処理液供給路の圧送ポンプと処理液
導入弁との間にフィルタを付設するとともに、処理液導
入弁よりも下流側に純水供給路を連通し、処理液供給路
の圧送ポンプと純水供給路接続部との間を処理液回収路
に接続し、純水処理に際して圧送ポンプで汲み上げた処
理液を処理液回収路を流通させて上記処理液貯留容器に
還流させるものである。According to a second aspect of the present invention, in the immersion treatment apparatus according to the first aspect, a filter is attached between the pressure feed pump and the treatment liquid introduction valve in the treatment liquid supply path, and the filter is provided downstream of the treatment liquid introduction valve. Side is connected to the deionized water supply path, the treatment liquid supply path is connected between the pressure feed pump and the deionized water supply path connection part to the treatment liquid recovery path, and the treatment liquid pumped up by the pressure feed pump during deionized water treatment is treated liquid. The liquid is circulated through the recovery passage and is returned to the treatment liquid storage container.
【0012】請求項3の発明は、請求項2に記載の浸漬
処理装置において、処理液供給路の圧送ポンプの上流側
と処理液回収路とを接続し、薬液処理に際して処理液を
処理液回収路から処理液供給路に流通させて上記基板処
理槽に還流させるものである。According to a third aspect of the present invention, in the immersion treatment apparatus according to the second aspect, the treatment liquid is recovered at the time of chemical treatment by connecting the treatment liquid supply passage upstream of the pressure feed pump and the treatment liquid recovery passage. The liquid is circulated from the channel to the processing liquid supply channel and is returned to the substrate processing bath.
【0013】請求項4の発明は、請求項2又は請求項3
に記載の浸漬処理装置において、純水処理に際して形成
される、処理液貯留容器を含む処理液循環経路の一部に
処理液を加熱する加熱手段を設けて構成したものであ
る。The invention of claim 4 is the invention of claim 2 or claim 3.
In the immersion treatment apparatus described in (1), a heating means for heating the treatment liquid is provided in a part of the treatment liquid circulation path including the treatment liquid storage container, which is formed during the pure water treatment.
【0014】請求項5の発明は、請求項1乃至請求項4
のいずれかに記載の浸漬処理装置において、処理液供給
路に処理液選択弁を介して複数の処理液貯留容器を切り
換え可能に接続し、処理液回収路に処理液戻選択弁を介
して上記複数の処理液貯留容器を切り換え可能に接続し
て構成したものである。なお、請求項5の発明は、複数
の基板処理槽に対して複数の処理液貯留容器を切り換え
可能に接続するものも含む。The invention of claim 5 is the invention of claims 1 to 4.
In the immersion treatment apparatus according to any one of the above, a plurality of treatment liquid storage containers are switchably connected to the treatment liquid supply passage via a treatment liquid selection valve, and the treatment liquid recovery passage is connected to the treatment liquid return passage via a treatment liquid return selection valve. A plurality of processing liquid storage containers are switchably connected. In addition, the invention of claim 5 includes one in which a plurality of processing liquid storage containers are switchably connected to a plurality of substrate processing baths.
【0015】[0015]
【作用】請求項1の発明では、基板処理槽への処理液供
給路に純水導入弁を介して純水供給路を連通したことか
ら、一つの基板処理槽により薬液処理と純水処理とが順
次実行されることになる。また、上記排液路を分岐して
一方は排液弁を介して排液ドレンに連通するとともに、
他方は処理液回収路として処理液回収弁を介して上記処
理液貯留容器に連通したことから、基板処理槽からオー
バーフローした処理液は、処理液回収路及び処理液回収
弁を介して回収され、再び基板処理槽に還流する。つま
り、処理液は廃棄されずに再利用される。According to the first aspect of the present invention, since the pure water supply passage is connected to the treatment liquid supply passage to the substrate treatment tank through the pure water introduction valve, the chemical treatment and the pure water treatment are performed by one substrate treatment tank. Will be sequentially executed. In addition, while branching the drainage path, one of them is connected to a drainage drain through a drainage valve,
Since the other one communicates with the processing liquid storage container via the processing liquid recovery valve as a processing liquid recovery path, the processing liquid overflowing from the substrate processing tank is recovered via the processing liquid recovery path and the processing liquid recovery valve, It is returned to the substrate processing tank again. That is, the processing liquid is reused without being discarded.
【0016】請求項2の発明では、請求項1の浸漬処理
装置において、処理液供給路の圧送ポンプと処理液導入
弁との間にフィルタを付設するとともに、処理液導入弁
よりも下流側に純水供給路を連通し、処理液供給路の圧
送ポンプと純水供給路接続部との間を処理液回収路に接
続したことから、薬液処理及び純水処理が行われている
間に、処理液はフィルタリングによりリフレッシュされ
る。即ち、薬液処理が行われる場合において、処理液は
処理液供給路のフィルタによりリフレッシュされる(以
下単にフィルタリングという)。また、純水処理が行わ
れる場合においても、圧送ポンプで処理液貯留容器から
汲み上げられた処理液は、フィルタリングされてから処
理液回収路を流下し、再び処理液貯留容器に還流する。According to a second aspect of the present invention, in the immersion treatment apparatus of the first aspect, a filter is attached between the pressure feed pump and the treatment liquid introduction valve in the treatment liquid supply path, and the filter is provided downstream of the treatment liquid introduction valve. Since the pure water supply path is communicated and the pressure feed pump of the processing solution supply path and the pure water supply path connecting portion are connected to the processing solution recovery path, during the chemical solution processing and the pure water processing, The processing liquid is refreshed by filtering. That is, when the chemical liquid treatment is performed, the treatment liquid is refreshed by the filter in the treatment liquid supply path (hereinafter simply referred to as filtering). Further, even in the case of performing pure water treatment, the treatment liquid pumped up from the treatment liquid storage container by the pressure feed pump flows down the treatment liquid recovery passage after being filtered and then flows back to the treatment liquid storage container again.
【0017】請求項3の発明では、請求項2の浸漬処理
装置において、処理液供給路の圧送ポンプの上流側と処
理液回収路とを接続したことから、以下のように作用す
る。薬液処理が行われる場合において、基板処理槽から
オーバーフローした処理液は、処理液回収路を流下した
後、処理液貯留容器を介さないで処理液供給路に流入
し、圧送ポンプで圧送されて再び基板処理槽に還流す
る。つまり、薬液処理が行われる際には、処理液は圧送
ポンプで吸引されて処理液回収路を流下することになる
ので、管径が同じ処理液回収路であっても単に落差で流
下するものに比較して流下する処理液の流量は格段に多
くなる。According to the third aspect of the invention, in the immersion treatment apparatus according to the second aspect, since the upstream side of the pressure feed pump of the treatment liquid supply passage and the treatment liquid recovery passage are connected to each other, the following operation is achieved. In the case where chemical treatment is performed, the treatment liquid overflowing from the substrate treatment tank flows down the treatment liquid recovery passage, then flows into the treatment liquid supply passage without passing through the treatment liquid storage container, is pumped by the pressure feed pump, and is again fed. Return to the substrate processing tank. In other words, when the chemical solution is processed, the processing solution is sucked by the pressure pump and flows down the processing solution recovery path. Therefore, even if the processing solution recovery path has the same pipe diameter, it simply flows down. The flow rate of the processing liquid flowing down is much higher than that of the above.
【0018】請求項4の発明では、請求項3の浸漬処理
装置において、純水処理に際して形成される、処理液貯
留容器を含む処理液循環経路の一部に処理液を加熱する
加熱手段を設けたことから、以下のように作用する。純
水処理が行われている待機時において、処理液貯留容器
から圧送ポンプで汲み上げられて再び処理液貯留容器に
還流する処理液は、加熱手段により加熱され所定の処理
温度に維持される。例えば高温による薬液処理をなす場
合において、処理液温度の上昇を待つ必要がないので、
純水処理から直ちに薬液処理に移行することが可能にな
る。According to a fourth aspect of the invention, in the immersion treatment apparatus of the third aspect, a heating means for heating the treatment liquid is provided in a part of the treatment liquid circulation path including the treatment liquid storage container, which is formed during the pure water treatment. Therefore, it works as follows. In the standby state where the pure water treatment is performed, the treatment liquid pumped up from the treatment liquid storage container by the pressure pump and returned to the treatment liquid storage container again is heated by the heating means and maintained at a predetermined treatment temperature. For example, when performing a chemical treatment at a high temperature, there is no need to wait for the temperature of the treatment liquid to rise,
It is possible to immediately shift from pure water treatment to chemical treatment.
【0019】請求項5の発明では、請求項1乃至請求項
4のいずれかに記載の浸漬処理装置において、処理液供
給路に処理液選択弁を介して複数の処理液貯留容器を切
り換え可能に接続し、処理液回収路に処理液戻選択弁を
介して上記複数の処理液貯留容器を切り換え可能に接続
して構成したことから、以下のように作用する。少なく
とも1つの基板処理槽に対して処理液選択弁を介して任
意の処理液貯留容器を選択して接続することにより、単
一の基板処理槽で複数の薬液処理が可能になる。その場
合には基板処理槽からオーバーフローした処理液は、選
択された処理液ごとにそれぞれの処理液貯留容器に回収
される。According to a fifth aspect of the invention, in the immersion treatment apparatus according to any one of the first to fourth aspects, a plurality of treatment liquid storage containers can be switched to the treatment liquid supply passage via a treatment liquid selection valve. Since the plurality of processing liquid storage containers are connected to the processing liquid recovery path via the processing liquid return selection valve so as to be switchable, the following operation is achieved. By selecting and connecting an arbitrary processing liquid storage container to at least one substrate processing tank via the processing liquid selection valve, a plurality of chemical solutions can be processed in a single substrate processing tank. In that case, the processing liquid overflowing from the substrate processing bath is collected in each processing liquid storage container for each selected processing liquid.
【0020】[0020]
【実施例】以下、本発明の実施例を図面に基づいて説明
する。先ず本発明が適用される基板洗浄用の基板処理装
置について説明する。図16は基板処理装置の概略斜視
図、図17は同装置の概略平面図、図18は同装置の概
略縦断面図である。本基板処理装置50は、後述する浸
漬処理部65において複数の基板処理槽1を並設して半
導体ウエハ(以下単にウエハという)の洗浄処理を行う
とともに、基板処理槽1からオーバーフローした洗浄液
(以下単に処理液という)を処理液貯留容器6に回収し
てリサイクル可能にしたものである。Embodiments of the present invention will be described below with reference to the drawings. First, a substrate processing apparatus for cleaning a substrate to which the present invention is applied will be described. 16 is a schematic perspective view of the substrate processing apparatus, FIG. 17 is a schematic plan view of the apparatus, and FIG. 18 is a schematic vertical sectional view of the apparatus. In the substrate processing apparatus 50, a plurality of substrate processing tanks 1 are arranged in parallel in a dipping processing unit 65 described later to clean semiconductor wafers (hereinafter simply referred to as wafers), and a cleaning liquid overflowing from the substrate processing tank 1 (hereinafter The treatment liquid is simply collected in the treatment liquid storage container 6 and can be recycled.
【0021】図16〜図18に示すように、この基板処
理装置50は、基板収容カセットCの搬入搬出部51
と、カセットCからウエハWを取り出し又はカセットC
内へウエハWを装填する基板移載部60と、カセットC
の搬入搬出部51と基板移載部60との間でカセットC
を移載するカセット移載ロボット55と、複数のウエハ
Wを一括して洗浄する浸漬処理部65と、ウエハWの液
切り基板乾燥部70と、基板移載部60でカセットCか
ら取り出した複数のウエハWを一括保持して上記浸漬処
理部65及び基板乾燥部70に搬送する基板搬送ロボッ
ト75とから構成される。As shown in FIGS. 16 to 18, this substrate processing apparatus 50 has a loading / unloading section 51 for a substrate accommodating cassette C.
And take out the wafer W from the cassette C or the cassette C
A substrate transfer section 60 for loading the wafer W therein and a cassette C
The cassette C is provided between the loading / unloading unit 51 and the substrate transfer unit 60.
A cassette transfer robot 55 for transferring a plurality of wafers W, an immersion processing unit 65 for cleaning a plurality of wafers W at a time, a liquid draining substrate drying unit 70 for the wafers W, and a plurality of substrates taken out of the cassette C by a substrate transfer unit 60. And a substrate transfer robot 75 that transfers the wafers W to the immersion processing section 65 and the substrate drying section 70.
【0022】上記カセット移載ロボット55は、図16
〜図18に示すように、昇降及び回転自在で、矢印A方
向に移動可能に構成され、搬入搬出部51に搬入されて
きたカセットCを基板移載部60のテーブル61上に移
載し、また、洗浄済みウエハWを収容したカセットCを
当該テーブル61から搬入搬出部51へ移載するように
構成される。また、上記基板搬送ロボット75は、図1
6〜図18に示すように、矢印B方向に移動可能に設け
られ、上記基板移載部60のリフター64から受け取っ
た複数のウエハWを基板搬送ロボット75の基板挟持ア
ーム76で保持し、移動部77に沿って浸漬処理部65
内及び基板乾燥部70内へ順次搬送するように構成され
る。The cassette transfer robot 55 is shown in FIG.
As shown in FIG. 18, the cassette C, which is configured to be movable up and down and rotatable and movable in the arrow A direction, is loaded into the loading / unloading unit 51 and transferred onto the table 61 of the substrate transfer unit 60. Further, the cassette C accommodating the cleaned wafer W is transferred from the table 61 to the loading / unloading section 51. In addition, the substrate transfer robot 75 is shown in FIG.
6 to 18, a plurality of wafers W, which are movably provided in the direction of arrow B and received from the lifter 64 of the substrate transfer unit 60, are held and moved by the substrate holding arm 76 of the substrate transfer robot 75. Immersion treatment unit 65 along the portion 77
It is configured to be sequentially transported into the inside and the substrate drying unit 70.
【0023】上記浸漬処理部65には、以下に述べるよ
うに、本発明に係る各種の浸漬処理装置が配設される。
ただし、図16〜図18においては、基板処理槽1を3
個並設したものが例示してある。即ち、上記浸漬処理部
65は、オーバーフロー型の基板処理槽1を3個並設し
て成り、各基板処理槽1に昇降可能に設けた基板保持具
66により、前記基板搬送ロボット75から受け取った
複数のウエハWを各基板処理槽1内に順次浸漬可能に構
成される。なお、本発明の実施例に係る浸漬処理装置の
具体的な内容については後述する。The immersion treatment section 65 is provided with various immersion treatment apparatuses according to the present invention as described below.
However, in FIG. 16 to FIG.
The ones arranged side by side are illustrated. That is, the immersion processing unit 65 is formed by arranging three overflow type substrate processing tanks 1 in parallel, and receives them from the substrate transfer robot 75 by the substrate holders 66 that can be moved up and down in each substrate processing tank 1. A plurality of wafers W can be sequentially dipped in each substrate processing bath 1. The specific contents of the immersion treatment apparatus according to the embodiment of the present invention will be described later.
【0024】上記基板乾燥部70は、例えば本出願人の
提案に係る特開平1−255227号公報に開示したよ
うに、ウエハWの主平面の中心近傍を回転中心として、
回転遠心力で液切り乾燥する乾燥処理槽71を具備して
成る。なお、この基板乾燥部70は、当該遠心式のもの
に替えて、有機溶剤等を使用した乾燥方式、又はこれに
加えて加熱蒸気や減圧による乾燥方式により乾燥を促進
するようにしても差し支えない。The substrate drying unit 70 has a rotation center near the center of the main plane of the wafer W as disclosed in, for example, Japanese Patent Laid-Open No. 1-255227 proposed by the present applicant.
It is provided with a drying treatment tank 71 for draining and drying with a rotating centrifugal force. It should be noted that the substrate drying unit 70 may accelerate the drying by using a drying method using an organic solvent or the like, or a heating steam or reduced pressure drying method in addition to the centrifugal type. .
【0025】上記基板処理装置50のレイアウトとして
は、図16〜図18に示すように、クリーンルーム作業
域30に臨む前方から保全用作業域31に臨む後方に向
かって前記カセットCの搬入搬出部51、基板移載部6
0、基板乾燥部70及び浸漬処理部65を順番に配置す
る。また、図16及び図18に示すように、上記浸漬処
理部65の3つの基板処理槽1の下部に処理液の給排用
配管室20を、また、この給排用配管室20の下部に洗
浄用の処理液貯留容器6を上下3段に配置する。さら
に、図16及び図17に示すように、上記基板移載部6
0・基板乾燥部70・浸漬処理部65の右側に基板搬送
ロボット75の移動部77を前後方向に形成し、これら
の左側の空間で、前記基板移載部60よりも後方の空間
をメンテナンス・スペース90として形成する。尚、メ
ンテナンス・スペース90の床部には複数の配管、バル
ブ等が敷設される。As for the layout of the substrate processing apparatus 50, as shown in FIGS. 16 to 18, the loading / unloading section 51 of the cassette C from the front facing the clean room work area 30 to the rear facing the maintenance work area 31. , Substrate transfer section 6
0, the substrate drying unit 70, and the immersion processing unit 65 are sequentially arranged. Further, as shown in FIGS. 16 and 18, the processing liquid supply / discharge piping chamber 20 is provided below the three substrate processing baths 1 of the immersion processing unit 65, and the processing liquid supply / discharge piping chamber 20 is provided at the lower portion. The processing liquid storage containers 6 for cleaning are arranged in upper and lower three stages. Further, as shown in FIGS. 16 and 17, the substrate transfer section 6 is
0, the substrate drying section 70, the moving section 77 of the substrate transfer robot 75 is formed in the front-back direction on the right side of the immersion processing section 65, and the space behind these substrate transfer sections 60 is maintained in these left spaces. The space 90 is formed. A plurality of pipes, valves, etc. are laid on the floor of the maintenance space 90.
【0026】即ち、上記基板処理装置50では、浸漬処
理部65の基板処理槽1と、給排用配管室20と、処理
液貯留容器6とを上下3段に積み上げ、縦方向にレイア
ウトするので、これらの積み上げ部の左側に臨んだエリ
アにメンテナンス・スペース90を確保できる。換言す
ると、図17に示すように、浸漬処理部65や基板移載
部60などの各種作業ブロックを平面視でL字状にまと
めることにより、基板処理装置50内の余剰空間をメン
テナンス・スぺース90として設定できる。また、主に
浸漬処理部65を縦向きに積み上げることにより、基板
処理装置50全体をコンパクトにまとめてクリーンルー
ム全体の省スペース化を効率良く図れるうえ、当該基板
処理装置50の設置数が増えるほど、クリーンルームに
おけるスペースの有効利用率を一層高められる。That is, in the substrate processing apparatus 50, the substrate processing tank 1 of the dipping processing unit 65, the supply / discharge piping chamber 20, and the processing liquid storage container 6 are stacked vertically in three stages and laid out vertically. The maintenance space 90 can be secured in the area facing the left side of these stacked parts. In other words, as shown in FIG. 17, various work blocks such as the immersion processing unit 65 and the substrate transfer unit 60 are put together in an L shape in a plan view, so that the excess space in the substrate processing apparatus 50 can be maintained and maintained. It can be set as a space 90. Further, by mainly stacking the dipping processing units 65 in the vertical direction, the whole substrate processing apparatus 50 can be compactly assembled to efficiently save space in the entire clean room, and as the number of the substrate processing apparatuses 50 installed increases, The effective utilization rate of the space in the clean room can be further increased.
【0027】また、上記浸漬処理部65の基板処理槽1
及び基板乾燥部70のレイアウトでは、図16〜図18
に示すように、保全用作業域31に臨む奥側からクリー
ンルーム作業域30に臨む前側に向かって、3つのオー
バーフロー型の基板処理槽1と、乾燥処理部70と前記
基板移載部60とを順番に配列する。即ち、上記基板乾
燥部70は浸漬処理部65と基板移載部60の間に配置
されるので、洗浄処理されたウエハWを可能な限り速く
乾燥させ、カセットCに戻して搬入搬出部51から効率
良く搬出できる。その反面、この基板乾燥工程はカセッ
トCへの戻しに対する時間的制約を強くは受けず、乾燥
処理の完了から基板移載部60への戻しの間に待機時間
を取れるので、作業工程の面で隣接状の基板移載部60
に対して乾燥処理部70にバッファ的な役割を担わせる
ことができる。Further, the substrate processing tank 1 of the dipping processing unit 65.
16 to FIG. 18 in the layout of the substrate drying unit 70.
As shown in FIG. 3, three overflow type substrate processing tanks 1, a drying processing unit 70, and the substrate transfer unit 60 are provided from the back side facing the maintenance work area 31 to the front side facing the clean room work area 30. Arrange in order. That is, since the substrate drying unit 70 is disposed between the immersion processing unit 65 and the substrate transfer unit 60, the cleaned wafer W is dried as quickly as possible, returned to the cassette C, and transferred from the carry-in / carry-out unit 51. It can be carried out efficiently. On the other hand, this substrate drying step is not strongly restricted by the time required for returning to the cassette C, and a waiting time can be taken between the completion of the drying process and the returning to the substrate transfer section 60. Adjacent substrate transfer section 60
On the other hand, the drying processing unit 70 can play a role of a buffer.
【0028】また、通常、酸洗浄処理においては昇温し
た酸を使用するので、酸の蒸気やミストが発生し易い
が、例えば、クリーンルーム作業域30から最も遠い奥
側の基板処理槽1でこの酸洗浄処理を実施する場合に
は、クリーンルーム作業域30への悪影響を防止して作
業の安全性を確保できる。以下、上記浸漬処理部65に
配設される各種浸漬処理装置の実施例について順次説明
する。In addition, since the temperature-increased acid is usually used in the acid cleaning process, acid vapor or mist is likely to be generated. For example, in the substrate processing tank 1 on the far side farthest from the clean room work area 30, When carrying out the acid cleaning treatment, it is possible to prevent the adverse effect on the clean room work area 30 and ensure the work safety. Hereinafter, examples of various immersion treatment devices arranged in the immersion treatment unit 65 will be sequentially described.
【0029】図1は本発明の実施例1に係る浸漬処理装
置の概略系統図である。この浸漬処理装置は、図1に示
すように、処理液中に複数の基板Wを一括して浸漬して
基板Wの表面洗浄をなす3つの基板処理槽1・1・1
と、各基板処理槽1の下部より処理液を供給する処理液
供給路7と、処理液供給路7に処理液導入弁8及び圧送
ポンプ15を順に介して連通した処理液貯留容器6と、
処理液供給路7に純水導入弁27を介して連通した純水
供給路3と、基板処理槽1よりオーバーフローした排液
を排液ドレン43に導出する排液路42とを具備して成
る。即ち、各基板処理槽1では夫々所定の処理液QA〜
QCにより後述する薬液処理が別々に行われる。FIG. 1 is a schematic system diagram of an immersion treatment apparatus according to the first embodiment of the present invention. As shown in FIG. 1, this immersion processing apparatus includes three substrate processing tanks 1.1.1.1 for collectively cleaning a surface of a substrate W by immersing a plurality of substrates W in a processing solution.
A processing liquid supply path 7 for supplying a processing liquid from the lower portion of each substrate processing tank 1, and a processing liquid storage container 6 communicating with the processing liquid supply path 7 through a processing liquid introduction valve 8 and a pressure pump 15 in order.
It is provided with a pure water supply passage 3 communicating with the treatment liquid supply passage 7 via a pure water introduction valve 27, and a drainage passage 42 for leading out the drainage overflowed from the substrate processing bath 1 to a drainage drain 43. . That is, in each substrate processing tank 1, a predetermined processing liquid Q A
Chemical process described later by Q C is performed separately.
【0030】上記基板処理槽1は、図1に示すように、
石英ガラス製で側面視略V字状・平面視略矩形状に形成
され、その下部に処理液供給路7を連結して成り、基板
処理槽1内に処理液の均一な上昇流を形成して基板Wを
表面処理するとともに、処理液を複数種の洗浄処理毎
に、迅速に置換し得るオーバーフロー槽として構成され
る。当該基板処理槽1は石英ガラス製に限らず、例え
ば、石英ガラスを腐食させてしまうHF等を洗浄液に用
いる場合には、耐食性を有する四フッ化エチレン樹脂等
の樹脂製材料で形成したものでも良い。また、浸漬処理
部65には4つ以上のオーバーフロー型基板処理槽1を
並設しても差し支えない。The substrate processing bath 1 is, as shown in FIG.
It is made of quartz glass and is formed into a substantially V shape in a side view and a substantially rectangular shape in a plan view, and a processing liquid supply path 7 is connected to the lower part thereof to form a uniform upward flow of the processing liquid in the substrate processing bath 1. The substrate W is subjected to the surface treatment by the surface treatment, and the treatment liquid is configured as an overflow tank capable of being rapidly replaced for each cleaning treatment of a plurality of types. The substrate processing tank 1 is not limited to quartz glass, and for example, when HF or the like that corrodes quartz glass is used as the cleaning liquid, it may be formed of a resin material such as tetrafluoroethylene resin having corrosion resistance. good. Further, four or more overflow type substrate processing baths 1 may be arranged in parallel in the immersion processing section 65.
【0031】処理液を供給するための構成は、図1に示
すように、各基板処理槽1の下部に並列状に連結した処
理液供給路7と、処理液供給路7に処理液導入弁8及び
圧送ポンプ15を介して連結した処理液貯留容器6と、
上記処理液供給路7に純水導入弁27を介して連通した
純水供給路3及び純水供給源(図示省略)とを具備して
成る。なお、上記純水供給路3は常温の又は所定温度に
加熱した純水DW を供給する純水の主要通路となるが、
純水DW は基板の表面酸化を防ぐうえで、脱酸素処理を
施したものを用いるのが好ましい。As shown in FIG. 1, the structure for supplying the processing liquid is a processing liquid supply passage 7 connected in parallel to the lower portion of each substrate processing tank 1 and a processing liquid introduction valve in the processing liquid supply passage 7. 8 and the processing liquid storage container 6 connected via the pressure feed pump 15,
The treatment liquid supply passage 7 is provided with a pure water supply passage 3 and a pure water supply source (not shown) which are connected to each other via a pure water introduction valve 27. The pure water supply passage 3 serves as a main passage of pure water for supplying the pure water D W that has been heated to room temperature or a predetermined temperature.
The pure water D W is preferably deoxidized in order to prevent surface oxidation of the substrate.
【0032】上記処理液導入弁8を開弁すると、処理液
貯留容器6内の処理液が圧送ポンプ15で基板処理槽1
に圧送され、基板処理槽1よりオーバーフローされ、薬
液処理が行われる。また、上記純水導入弁27を開弁す
ると、純水DW が純水供給路3から基板処理槽1に供給
され、オーバーフローして純水処理が行われる。即ち、
処理液導入弁8と純水導入弁27との切り換え操作で処
理液QA 〜QCと純水DW を処理液供給路7に選択的に
供給可能に構成される。なお、上記処理液貯留容器6に
は、処理液QA 〜QC が自動的に補充可能に構成されて
いる。When the processing liquid introduction valve 8 is opened, the processing liquid in the processing liquid storage container 6 is pumped by the pump 15 to the substrate processing tank 1.
And is overflowed from the substrate processing bath 1 to perform chemical treatment. Further, when the pure water introduction valve 27 is opened, pure water D W is supplied from the pure water supply path 3 to the substrate processing bath 1 and overflows to perform pure water processing. That is,
Treatment solution selectively suppliable configured with switching operation of the inlet valve 8 and pure water introducing valve 27 processing liquid Q A to Q C and pure water D W to the processing liquid supply path 7. Note that the processing liquid storage container 6, the process liquid Q A to Q C is configured to be automatically refilled.
【0033】処理液QA 〜QC を排出するための構成
は、図1に示すように、各基板処理槽1の上側部に付設
したオーバーフロー液回収部41と、オーバーフローし
た処理液を排出する排液路42と、基板処理槽1の底部
から当該排液路42に給排切換弁13を介して導出した
連通路4とを具備して成る。上記排液路42の流通下手
側を二股状に分岐して、その一方を排液弁47を介して
排液ドレン43に接続し、その他方を処理液回収路22
として処理液回収弁44を介して前記処理液貯留容器6
に接続する。なお、上記給排切換弁13は、必要に応じ
て基板処理槽1内の各処理液QA 〜QC を排液路42へ
導出するためのものである。The configuration for discharging the processing liquid Q A to Q C, as shown in FIG. 1, an overflow liquid recovery section 41 which is attached to the upper portion of each substrate treatment tank 1, to discharge the processing liquid overflowing It is provided with a drainage passage 42 and a communication passage 4 leading from the bottom portion of the substrate processing tank 1 to the drainage passage 42 via the supply / discharge switching valve 13. The lower flow side of the drainage passage 42 is branched into a bifurcated shape, one of which is connected to the drainage drain 43 via a drainage valve 47, and the other is connected to the treatment liquid recovery passage 22.
Via the treatment liquid recovery valve 44 as the treatment liquid storage container 6
Connect to. Note that the supply and discharge switching valve 13 is used to derive the respective processing solution Q A to Q C of the substrate processing bath 1 to the drains 42 if required.
【0034】本実施例1では、図1に示すように、各基
板処理槽1の下部には、各処理液貯留容器6から導出し
た処理液供給路7が処理液導入弁8を介して接続されて
おり、所定の処理液QA 〜QC が各処理液貯留容器6か
ら各基板処理槽1に夫々供給される。また、各基板処理
槽1の下部には純水供給路3が純水導入弁27を介して
接続されており、純水DW が各基板処理槽1に夫々供給
可能になっている。そして、基板処理槽1の上部から導
出した排液路42の下流側は、処理液回収弁44を介し
て連通された処理液貯留容器6の側と、排液弁47を介
して連通された排液ドレン43の側との2方向に分岐さ
れている。このため、図1の処理液QA について述べる
と、処理液貯留容器6内の処理液QA は、処理液供給路
7から各基板処理槽1にオーバーフローしてウエハWを
洗浄した後、排液路42から処理液回収弁44を介して
処理液貯留容器6に回収され、基板処理槽1にリサイク
ルされる。In the first embodiment, as shown in FIG. 1, a processing liquid supply passage 7 led out from each processing liquid storage container 6 is connected to a lower portion of each substrate processing tank 1 through a processing liquid introduction valve 8. are, predetermined processing solution Q a to Q C are respectively supplied from the process liquid storing container 6 to each substrate treatment tank 1. Further, a pure water supply passage 3 is connected to a lower portion of each substrate processing tank 1 via a pure water introduction valve 27, and pure water D W can be supplied to each substrate processing tank 1. Then, the downstream side of the drainage path 42 led out from the upper part of the substrate processing tank 1 is communicated with the side of the treatment liquid storage container 6 which is communicated with via the treatment liquid recovery valve 44 via a drainage valve 47. It is branched in two directions with respect to the drainage drain 43 side. Therefore, when the described processing solution Q A in FIG. 1, the processing solution Q A of the processing liquid storage container 6, after cleaning the wafer W by overflow from the processing liquid supply channel 7 in each of the substrate treatment tank 1, waste The liquid is collected from the liquid path 42 to the processing liquid storage container 6 via the processing liquid recovery valve 44 and recycled to the substrate processing bath 1.
【0035】一方、薬液処理の後で行われる純水処理で
は、純水DW が純水供給路3から基板処理槽1に供給さ
れてオーバーフローされ、排液路42から排液弁47を
介して排液ドレン43に廃棄される。なお、処理液QB
及びQC についても同様に基板処理槽1から回収可能に
構成される。従って、基板処理槽1からオーバーフロー
した各処理液QA 〜QC は処理液回収弁44を介して処
理液貯留容器6に回収されて再利用されるので、複数種
の薬液処理毎に処理液を廃棄する従来例2に比べて処理
液の消費量を効果的に抑制して、基板処理装置全体のラ
ンニングコストを低減できる。On the other hand, in the pure water treatment performed after the chemical liquid treatment, pure water D W is supplied from the pure water supply passage 3 to the substrate processing tank 1 and overflows, and the drainage passage 42 passes through the drainage valve 47. It is discarded in the drainage drain 43. The processing liquid Q B
Similarly, Q C can be collected from the substrate processing bath 1. Accordingly, since each processing solution Q A to Q C overflowed from the substrate processing chamber 1 is recycled are collected in the processing liquid storage container 6 through the treatment liquid recovery valve 44, the treatment liquid for each of a plurality of types of chemical treatment It is possible to effectively suppress the consumption of the processing liquid and reduce the running cost of the entire substrate processing apparatus, as compared with the conventional example 2 in which the substrate is discarded.
【0036】また、この浸漬処理装置では、図1に示す
ように、並設した3つの基板処理槽1にウエハWを順次
浸漬して複数種の処理液QA 〜QC で並行処理するので
スループットが向上する。しかも、この浸漬処理装置で
は処理液を基板処理槽1の上部からオーバーフローさせ
るので、薬液処理から純水処理に移行する際には、基板
処理槽1内の洗浄液を全部排出せずとも薬液を純水に置
換することが可能であり、薬液処理及び純水処理が完了
するまでウエハWは空気に触れない。このため、ウエハ
表面に酸化皮膜が形成されたり、空気中の不純物が付着
したりする虞れはない。また、基板処理槽1内の洗浄液
を全部排出せずともウエハWの装填や取り出しができ
る。Further, in the immersion treatment device, as shown in FIG. 1, since the parallel processing of multiple types of processing solution Q A to Q C by the wafer W sequentially immersed into three substrate processing tank 1 which is arranged Throughput is improved. Moreover, in this immersion processing apparatus, since the processing liquid overflows from the upper portion of the substrate processing tank 1, when the chemical liquid processing is transferred to the pure water processing, the cleaning liquid in the substrate processing tank 1 is not completely discharged and the chemical liquid is pure. It can be replaced with water, and the wafer W does not come into contact with air until the chemical solution treatment and the pure water treatment are completed. Therefore, there is no risk that an oxide film will be formed on the wafer surface or that impurities in the air will adhere. Further, the wafer W can be loaded and unloaded without discharging all the cleaning liquid in the substrate processing bath 1.
【0037】次に上記実施例1における薬液処理の内容
について一例を挙げて説明する。第1番目の基板処理槽
1ではSC1 処理を行う。処理液QA としては調製した
アンモニア(NH4OH)と過酸化水素水(H2O2)と
純水DW との混合液を使用する。処理液QA による薬液
処理の後で純水処理を実施し、ウエハWの表面に付着し
たフォトレジスト等の有機物を除去する。なお、SC1
処理に代えてCARO処理を行う場合もある。この場合
の処理液QA としては硫酸過水を用いる。Next, the contents of the chemical liquid treatment in the above-mentioned first embodiment will be described by way of an example. SC 1 processing is performed in the first substrate processing tank 1. As the treatment liquid Q A , a prepared mixed liquid of ammonia (NH 4 OH), hydrogen peroxide solution (H 2 O 2 ) and pure water D W is used. Pure water treatment is performed after the chemical treatment with the treatment liquid Q A to remove organic substances such as photoresist adhering to the surface of the wafer W. In addition, SC 1
CARO processing may be performed instead of processing. Sulfuric acid / hydrogen peroxide is used as the treatment liquid Q A in this case.
【0038】また、第2番目の基板処理槽1ではSC2
処理を行う。処理液QB としては調製した塩酸(HC
l)と過酸化水素水(H2O2)と純水の混合液を使用す
る。同様に処理液QB による薬液処理の後で純水処理を
実施し、ウエハWの表面に付着した金属イオンを除去す
る。さらに、第3番目の基板処理槽1ではHF処理を行
う。処理液QC としてはフッ化水素の50%水溶液を使
用し、ウエハWの表面の未露光部分等をエッチングす
る。なお、上記フッ化水素に代えてリン酸過水を用いる
場合もある。In the second substrate processing bath 1, SC 2
Perform processing. As the treatment liquid Q B , prepared hydrochloric acid (HC
l), a hydrogen peroxide solution (H 2 O 2 ) and pure water are used. Similarly, pure water treatment is performed after the chemical treatment with the treatment liquid Q B to remove metal ions attached to the surface of the wafer W. Further, HF processing is performed in the third substrate processing tank 1. The processing solution Q C using a 50% aqueous solution of hydrogen fluoride to etch unexposed portion of the surface of the wafer W. In some cases, phosphoric acid / hydrogen peroxide may be used instead of the hydrogen fluoride.
【0039】ウエハの洗浄処理をふくむ表面処理は、そ
の製造工程により一様ではなく、第1番目〜第3番目の
基板処理槽1に順次浸漬するとは限らない。ちなみに、
その類型として例えば下記(1)〜(4)のような種々
の表面処理が可能である。 (1)SC1 処理→HF処理→SC2 処理 (2)HF処理→SC1 処理→SC2 処理 (3)SC1 処理→SC2 処理 (4)その他、HF処理のみ、又はSC1 処理のみ。 上記薬液処理の類型は、後述する実施例においても同様
に適用できるものであり、重複する説明は省略する。The surface treatment including the wafer cleaning treatment is not uniform depending on the manufacturing process and is not always sequentially dipped in the first to third substrate processing tanks 1. By the way,
As its type, various surface treatments such as the following (1) to (4) are possible. (1) SC 1 treatment → HF treatment → SC 2 treatment (2) HF treatment → SC 1 treatment → SC 2 treatment (3) SC 1 treatment → SC 2 treatment (4) Others, HF treatment only or SC 1 treatment only . The above-mentioned type of chemical solution treatment can be similarly applied to the examples described later, and the duplicated description will be omitted.
【0040】なお、いずれかの薬液処理においてHF処
理が含まれる場合には、HF処理した後にウエハWを空
気に接触させると、HF、O2 とSiとが反応し、ウエ
ハWの表面に不純化合物が生じてパーティクルとなる。
このため、HFを基板処理槽1に供給して循環した後、
HFの供給を停止し、続いて、基板処理槽1にHFを入
れた状態で純水を供給し、オーバーフローさせることに
よりHFを純水に置き換えていく。これにより、ウエハ
Wは常に液中にとどまり、純水の連続供給によりHF成
分はパーティクルを発生することなく除去される。When any of the chemical liquid treatments includes HF treatment, when the wafer W is brought into contact with air after the HF treatment, HF, O 2 and Si react with each other, and the surface of the wafer W is impure. A compound is generated and becomes a particle.
Therefore, after supplying HF to the substrate processing bath 1 and circulating it,
The supply of HF is stopped, and then pure water is supplied in a state where HF is placed in the substrate processing bath 1 and overflowed to replace HF with pure water. As a result, the wafer W always stays in the liquid, and the continuous supply of pure water removes the HF component without generating particles.
【0041】上記薬液処理において、HF液以外の処理
液を回収する場合、ウエハWが空気に触れてもよいとき
には、基板処理槽1の底部から洗浄液を抜いてから純水
DWを供給するが、弊害がある場合には、やはり、処理
液を純水で置換しながらウエハWが空気に触れないよう
にする。なお、上記純水による最終リンス処理では、純
水の比抵抗値を検出したり、一定時間の経過により、純
水処理が完了するように構成される。また、最終リンス
が完了した後に基板処理槽1からウエハWを引き上げる
場合には、浮遊したパーティクルがウエハWに付着する
のを防止するため、純水をオーバーフローさせながら行
う。In the above-mentioned chemical liquid processing, when the processing liquid other than the HF liquid is to be recovered, when the wafer W may be exposed to the air, the cleaning liquid is drained from the bottom of the substrate processing bath 1, and the pure water D W is supplied. When there is an adverse effect, the processing liquid is replaced with pure water so that the wafer W is not exposed to the air. In the final rinse treatment with pure water, the pure water treatment is completed when the specific resistance value of the pure water is detected or when a fixed time elapses. Further, when the wafer W is pulled up from the substrate processing bath 1 after the final rinse, in order to prevent the floating particles from adhering to the wafer W, the deionized water is overflowed.
【0042】なお、上記実施例1における利点として、
単一の基板処理槽1を用いて薬液処理と純水処理とを実
施することにより基板処理槽1の個数を減らして基板処
理装置の大型化を防止できる点、各処理液QA 〜QC を
処理液貯留容器6に回収して再利用することによりラン
ニングコストを低減できる点、薬液処理から純水処理に
移行する際に基板処理槽1内の処理液を全部排出しない
で処理液を純水に置換することによりウエハ表面に酸化
皮膜が形成されるのを防止できる点が挙げられるが、こ
れらの利点は、後述する実施例2〜実施例11において
も同様であり、重複する説明は省略する。As an advantage of the first embodiment,
That it can prevent an increase in the size of the substrate processing apparatus by reducing the number of the substrate processing chamber 1 by performing the chemical treatment and pure water treatment using a single substrate processing chamber 1, the processing solution Q A to Q C The running cost can be reduced by collecting and reusing the processing liquid in the processing liquid storage container 6, and the processing liquid is not completely discharged from the substrate processing tank 1 when the chemical liquid processing is changed to the pure water processing. Although it is possible to prevent the formation of an oxide film on the surface of the wafer by substituting with water, these advantages are the same in Examples 2 to 11 described later, and redundant description will be omitted. To do.
【0043】図2は本発明の実施例2に係る浸漬処理装
置の概略系統図である。この浸漬処理装置は、図2に示
すように、前記浸漬処理部65に配設される3つの基板
処理槽1のうちの1槽を、純水処理専用の基板処理槽に
設定したものである。即ち、リンス専用槽1の下部から
純水供給路3を導出し、純水供給路3に純水導入弁27
を介して純水供給源(図示せず)を接続するとともに、
リンス専用槽1の上部から排液路42を導出し、排液路
42に排液弁47を介して排液ドレン43を接続して、
純水DW がリンス専用槽1に供給され、オーバーフロー
してウエハWを純水処理するとともに、排液路42から
排液弁47を介して排液ドレン43に廃棄されるように
構成されている。FIG. 2 is a schematic system diagram of an immersion treatment apparatus according to the second embodiment of the present invention. As shown in FIG. 2, this immersion treatment apparatus is one in which one of the three substrate treatment tanks 1 disposed in the immersion treatment section 65 is set as a substrate treatment tank dedicated to pure water treatment. . That is, the pure water supply path 3 is led out from the lower part of the rinse tank 1, and the pure water supply valve 27 is introduced into the pure water supply path 3.
A pure water supply source (not shown) is connected via
A drainage channel 42 is led out from the upper part of the rinse tank 1, and a drainage drain 43 is connected to the drainage channel 42 via a drainage valve 47.
Pure water D W is supplied to the rinsing bath 1, overflows, and the wafer W is treated with pure water, and is discarded from the drainage channel 42 to the drainage drain 43 via the drainage valve 47. There is.
【0044】本実施例2では、2個の基板洗浄槽1の夫
々で処理液QA 又はQB による薬液処理が施された後、
引き続いて軽く純水処理が行なわれるが、さらに別途に
上記リンス専用槽1で純水DW による純水処理が行われ
る。このため、実施例1のように各基板処理槽1で薬液
処理と純水処理とを行う場合に比べて、強力にウエハW
をリンスでき、純水処理の所要時間が短縮されてスルー
プットが向上する。In the second embodiment, after the chemical treatment with the treatment liquid Q A or Q B is performed in each of the two substrate cleaning tanks 1,
Subsequently, the pure water treatment is carried out lightly, and separately, the pure water treatment with the pure water D W is carried out in the rinse tank 1. Therefore, the wafer W is stronger than the case where the chemical liquid treatment and the pure water treatment are performed in each substrate processing tank 1 as in the first embodiment.
Can be rinsed, the time required for pure water treatment can be shortened, and the throughput can be improved.
【0045】図3は本発明の実施例3に係る浸漬処理装
置の概略系統図である。この浸漬処理装置は、基板洗浄
装置50の浸漬処理部65に単槽の基板処理槽1を配設
したもので、前記実施例1又は実施例2と同様に、基板
処理槽1に供給されてオーバーフローする処理液を処理
液回収路22と処理液回収弁44を介して処理液貯留容
器6に回収して再利用可能に構成するとともに、基板処
理槽1よりオーバーフローした純水DW を排液ドレン4
3に廃棄するように構成する。この実施例3において
も、処理液の消費量を抑制するとともに、基板処理槽1
の単槽化で基板処理装置50全体をコンパクトにまとめ
られる。FIG. 3 is a schematic system diagram of an immersion treatment apparatus according to the third embodiment of the present invention. In this immersion treatment apparatus, the single substrate treatment tank 1 is arranged in the immersion treatment section 65 of the substrate cleaning apparatus 50, and is supplied to the substrate treatment tank 1 in the same manner as in the first or second embodiment. The overflowing processing liquid is collected in the processing liquid storage container 6 via the processing liquid recovery passage 22 and the processing liquid recovery valve 44 so that it can be reused, and the pure water D W overflowing from the substrate processing tank 1 is drained. Drain 4
It is configured to be discarded in 3. Also in this third embodiment, the consumption of the processing liquid is suppressed and the substrate processing bath 1 is used.
The substrate processing apparatus 50 as a whole can be compactly formed by using the above single tank.
【0046】図4は本発明の実施例4に係る浸漬処理装
置の概略系統図である。この実施例4は、複数の処理液
貯留容器6を切り換え可能に接続したものである。この
浸漬処理装置は、処理液を基板処理槽1から処理液貯留
容器6に循環させて再利用可能にした点は前記実施例1
〜3と同様であるが、前記実施例1が3つの基板処理槽
1で3種類の薬液処理を別々に行うのに対して、本実施
例4は1つの基板処理槽1内で3種類の薬液処理を順番
に行うようにして、複数種の薬液処理に対して基板処理
槽1を共用化した点に特徴がある。FIG. 4 is a schematic system diagram of an immersion treatment apparatus according to the fourth embodiment of the present invention. In the fourth embodiment, a plurality of processing liquid storage containers 6 are switchably connected. In this immersion processing apparatus, the processing liquid is circulated from the substrate processing tank 1 to the processing liquid storage container 6 so that it can be reused.
3 to 3, but the above-mentioned Example 1 performs three kinds of chemical liquid treatments separately in the three substrate processing baths 1, whereas the present Example 4 uses three types of chemical solutions in one substrate processing bath 1. It is characterized in that the substrate processing bath 1 is shared for a plurality of types of chemical liquid treatments by sequentially performing chemical liquid treatments.
【0047】即ち、図4(A)に示すように、3種類の処
理液QA・QB・QCの各処理液貯留容器6から各処理液導
入弁8A・8B・8Cを介して処理液供給路7を1個の基板
処理槽1の下部に連結する。ここで、上記処理液導入弁
8A・8B・8Cは、請求項5における処理液選択弁82に
相当する。また、図4(B)はこの処理液の供給側におい
て、各処理液を供・断する処理液導入弁8A・8B・8C及
び純水導入弁27が集合した導入弁連結路16を示し、
当該連結路16の一端16aには純水供給路3が接続さ
れ、その他端16bには処理液供給路7が接続される。That is, as shown in FIG. 4A, the treatment liquid storage valves 6 of the three kinds of treatment liquids Q A , Q B, and Q C are connected to the treatment liquid introduction valves 8 A , 8 B, and 8 C , respectively. The processing liquid supply path 7 is connected to the lower part of one substrate processing bath 1 via the above. Here, the processing liquid introduction valves 8 A , 8 B, and 8 C correspond to the processing liquid selection valve 82 in claim 5. Further, FIG. 4 (B) shows an introduction valve connecting path 16 where the treatment liquid introduction valves 8 A , 8 B , 8 C and the pure water introduction valve 27, which supply and cut off each treatment liquid, are gathered on the treatment liquid supply side. Indicates
The pure water supply passage 3 is connected to one end 16a of the connection passage 16, and the treatment liquid supply passage 7 is connected to the other end 16b.
【0048】上記基板処理31の排液路42の下流側を
夫々4本に分岐し、これらの一方を排液ドレン43に対
して接続し、他方を処理液回収路22(具体的には22
a・22b・22c)として上記3種類の処理液QA・Q
B・QCの処理液貯留容器6に対して接続する。オーバー
フローした各種の処理液を処理液貯留容器6に回収する
とともに、必要に応じて排液ドレン43に廃棄できるよ
うに構成する。図4(C)はこの処理液の排出側におい
て、各処理液を供・断する処理液回収弁44A・44B・4
4C及び排液弁47の集合した排液路42の要部を示
し、排液路42の下流側の最奥部42aには純水用の上
記排液弁47が設けられる。ここで、上記処理液回収弁
44A・44B・44Cは、請求項5における処理液戻選択
弁83に相当する。The downstream side of the drainage path 42 of the substrate processing 31 is branched into four lines, one of these is connected to the drainage drain 43, and the other is connected to the processing liquid recovery path 22 (specifically, 22).
a · 22b · 22c) as the three types of processing solution Q A · Q
Connecting the processing liquid storage container 6 for B · Q C. Various processing liquids that have overflowed are collected in the processing liquid storage container 6 and can be disposed of in the drainage drain 43 as needed. FIG. 4 (C) shows processing liquid recovery valves 44 A , 44 B , 4 for supplying / disconnecting each processing liquid on the discharge side of this processing liquid.
4 C and shows an essential part of the drainage passage 42 a set of drain valve 47, the drain valve 47 for pure water is provided in the innermost portion 42a of the downstream side of the drain path 42. Here, the processing liquid recovery valves 44 A , 44 B , 44 C correspond to the processing liquid return selection valve 83 in claim 5.
【0049】一方、上記基板処理槽1への各処理液QA
〜QCの圧送手段25は、図4(A)に示すように、各処
理液貯留容器6(具体的には6A〜6C)から導出した処理
液供給路7(具体的には7A〜7C)に設けた1個の圧送ポ
ンプ15と、圧送ポンプ15を駆動するモータ19と、
圧送ポンプ15の吐出側に設けた圧力検出器26(具体
的には、圧力計)と、圧力検出器26からの検出信号に
基づいて圧送ポンプ15の回転数を増減制御する制御手
段12とから構成される。当該圧送手段25では、設定
圧に対する過不足を圧力検出器26で検出し、当該制御
手段12が圧送ポンプ15の駆動モータ19を駆動制御
して、基板処理槽1に所定の設定圧力で処理液が圧送さ
れる。On the other hand, each processing liquid Q A to the substrate processing bath 1
To Q C pumping means 25, FIG. 4 (A), the respective processing liquid storage container 6 (specifically 6 A to 6 C) processing liquid supply passage 7 derived from (specifically 7 A pressure pump 15 provided at A to 7 C ), a motor 19 for driving the pressure pump 15,
From the pressure detector 26 (specifically, a pressure gauge) provided on the discharge side of the pressure feed pump 15, and the control means 12 that controls the rotation speed of the pressure feed pump 15 based on the detection signal from the pressure detector 26. Composed. In the pressure feeding means 25, the pressure detector 26 detects an excess or deficiency with respect to the set pressure, and the control means 12 drives and controls the drive motor 19 of the pressure feeding pump 15 to set the processing liquid in the substrate processing tank 1 at a predetermined set pressure. Is pumped.
【0050】ウエハWを洗浄する場合には、まず処理液
QAを処理液導入弁8Aを介して基板処理槽1に循環させ
てオーバーフローさせつつウエハWを薬液処理する。引
き続きその後で処理液QAを給排液切換弁13及び排液
路42の処理液回収弁44Aを介して処理液貯留容器6
に回収する。そして空になった基板処理槽1に純水導入
弁27を介して純水DWを供給して純水処理に移行す
る。純水をオーバーフローさせながらウエハWをリンス
した後、純水を排出する。処理液QB・QCについても、
処理液QA の場合と同様に循環させて薬液処理した後、
ウエハWを基板処理槽1から引き上げる。In the case of cleaning the wafer W, first, the processing liquid Q A is circulated into the substrate processing bath 1 through the processing liquid introduction valve 8 A to overflow the wafer W, and the wafer W is chemically processed. Subsequently, after that, the treatment liquid Q A is supplied to the treatment liquid storage container 6 via the supply / discharge liquid switching valve 13 and the treatment liquid recovery valve 44 A of the discharge passage 42.
To collect. Then, pure water D W is supplied to the emptied substrate processing tank 1 through the pure water introducing valve 27 to shift to pure water processing. After rinsing the wafer W while overflowing the pure water, the pure water is discharged. For even the processing solution Q B · Q C,
After circulating and treating the chemical liquid as in the case of the treatment liquid Q A ,
The wafer W is pulled up from the substrate processing bath 1.
【0051】上記純水処理では、基板処理槽1からオー
バーフローした純水排液を排液弁47を介して排液ドレ
ン43に廃棄する。その際、純水廃液は排液路42の最
奥部42aから排出されるので、排液路42の内壁に残
留する処理液は有効に洗い流される。また、基板処理槽
1の底部の排出口45及び給排液切換弁13はクイック
ドレン可能に構成され、急速排出によりスループットを
高めている。なお、いずれかの薬液処理においてHF処
理が含まれる場合には、前記のように基板処理槽1にH
Fを入れた状態で純水を供給し、オーバーフローさせる
ことによりHFを純水に置換するとともに、最終リンス
が完了した後に基板処理槽1から基板Wを引き上げる場
合には、純水をオーバーフローさせながら行う。In the above pure water treatment, the pure water drainage liquid overflowing from the substrate processing tank 1 is discarded into the drainage drain 43 through the drainage valve 47. At this time, since the pure water waste liquid is discharged from the innermost portion 42a of the drainage passage 42, the processing liquid remaining on the inner wall of the drainage passage 42 is effectively washed away. Further, the discharge port 45 at the bottom of the substrate processing tank 1 and the supply / discharge liquid switching valve 13 are configured to be capable of quick draining, and the throughput is increased by rapid discharge. In addition, when HF treatment is included in any one of the chemical liquid treatments, the substrate treatment tank 1 is subjected to H treatment as described above.
When pure water is supplied in a state of being filled with F and HF is replaced with pure water by overflow, and when the substrate W is pulled up from the substrate processing bath 1 after the final rinse is completed, while pure water overflows, To do.
【0052】図5は本発明の実施例5に係る浸漬処理装
置の概略系統図を示し、同図(A)中の太線は薬液処理の
場合の処理液経路を、同図(B)中の太線は純水処理の場
合の純水経路及び処理液経路を示す。この浸漬処理装置
は、前記浸漬処理部65に単一の基板処理槽1を配設す
るとともに、薬液処理及び純水処理が行われる間に処理
液の循環フィルタリングと温度調整とを実行するための
ものである。即ち、図5(A)(B)に示すように、処理液
供給路7の処理液導入弁8と排液路42の排液弁47と
を、それぞれ切換可能な三方弁で構成する。FIG. 5 is a schematic system diagram of an immersion treatment apparatus according to the fifth embodiment of the present invention. The thick line in FIG. 5 (A) indicates the treatment liquid path in the case of chemical treatment, and the thick line in FIG. Thick lines indicate pure water paths and processing liquid paths in the case of pure water processing. In this immersion processing apparatus, a single substrate processing tank 1 is provided in the immersion processing section 65, and the processing solution is circulated and filtered and the temperature is adjusted while the chemical solution processing and the pure water processing are performed. It is a thing. That is, as shown in FIGS. 5A and 5B, the treatment liquid introduction valve 8 of the treatment liquid supply passage 7 and the drainage valve 47 of the drainage passage 42 are constituted by switchable three-way valves.
【0053】上記排液路42の流通下手側を二股状に分
岐して、一方の管路21を排液ドレン43に接続し、他
方を処理液回収路22として処理液貯留容器6に接続す
る。そして処理液導入弁8よりも下流側に純水供給路3
を連通するとともに、圧送ポンプ15と処理液導入弁8
との間にフィルタ10とインライン型のヒータ(以下
「インラインヒータ」という)81とを付設し、処理液
供給路7と処理液回収路22とを切換可能な処理液導入
弁8を介して接続する。The lower flow side of the drainage passage 42 is branched into two branches, one of the pipe passages 21 is connected to the drainage drain 43, and the other is connected to the treatment liquid storage container 6 as the treatment liquid recovery passage 22. . The pure water supply passage 3 is provided downstream of the treatment liquid introduction valve 8.
And the pressure feed pump 15 and the treatment liquid introduction valve 8
A filter 10 and an in-line type heater (hereinafter referred to as “in-line heater”) 81 are attached between the filter 10 and the filter 10, and the treatment liquid supply passage 7 and the treatment liquid recovery passage 22 are connected via a treatment liquid introduction valve 8 which can be switched. To do.
【0054】薬液処理が行われる場合には、図5(A)に
示すように、基板処理槽1からオーバーフロー液回収部
41へオーバーフローした洗浄液は、処理液回収路22
を経て処理液貯留容器6に回収され、再び圧送ポンプ1
5により吸い上げられ、フィルタ10により濾過されて
リフレッシュされた後、基板処理槽1に還流する。ま
た、純水処理が行われる場合には、図5(B)に示すよう
に、オーバーフローした純水は切換可能な排液弁47及
び排液路21を介して排液ドレン43に排出される。When the chemical treatment is performed, as shown in FIG. 5A, the cleaning liquid overflowed from the substrate treatment tank 1 to the overflow recovery portion 41 is treated by the treatment liquid recovery passage 22.
After that, it is collected in the processing liquid storage container 6 and is again fed by the pressure pump 1.
After being sucked up by the filter 5, filtered by the filter 10 and refreshed, it is returned to the substrate processing bath 1. When the pure water treatment is performed, the overflowed pure water is discharged to the drain drain 43 through the switchable drain valve 47 and the drain passage 21, as shown in FIG. 5 (B). .
【0055】この純水処理中において、圧送ポンプ15
で汲み上げられた処理液は、フィルタ10により濾過さ
れてリフレッシュされた後、切換可能な処理液導入弁8
を介して処理液回収路22に流入し、再び処理液貯留容
器6に還流する。上記構成により単一の基板処理槽1を
用いる場合でも、薬液処理及び純水処理が行われる間に
処理液の循環フィルタリングが行われ、処理液をリフレ
ッシュさせることができる。また、前記インラインヒー
タ81は、例えば管路の外周にヒータを配設した構成を
具備し、管路を通過する処理液を加熱する。このため、
上述した純水処理中においても循環する処理液を均一な
温度に調整しておくことができ、特に高温薬液処理を行
う場合に、所定温度の処理液を基板処理槽内に供給して
直ちに洗浄処理に移行することが可能になる。During this pure water treatment, the pressure pump 15
The treatment liquid pumped up by is filtered by the filter 10 and refreshed, and then the treatment liquid introduction valve 8 which can be switched.
Flow into the processing liquid recovery path 22 via the flow path and return to the processing liquid storage container 6 again. Even when a single substrate processing tank 1 is used with the above configuration, the processing solution is circulated and filtered during the chemical solution processing and the pure water processing, so that the processing solution can be refreshed. The in-line heater 81 has, for example, a structure in which a heater is arranged on the outer periphery of the pipeline, and heats the processing liquid passing through the pipeline. For this reason,
The circulating treatment liquid can be adjusted to a uniform temperature even during the pure water treatment described above, and particularly when performing high-temperature chemical treatment, the treatment liquid having a predetermined temperature is supplied into the substrate treatment tank to immediately wash it. It becomes possible to shift to processing.
【0056】図6は本発明の実施例6に係る浸漬処理装
置の概略系統図を示し、同図(A)中の太線は薬液処理の
場合の処理液循環経路を、同図(B)中の太線は純水処理
の場合の純水経路及び処理液循環経路を示す。この浸漬
処理装置も実施例5(図5)と同様に処理液の循環フィル
タリングと温度調整とを実行するものである。即ち、図
6(A)(B)に示すように、実施例5(図5)の浸漬処理
装置において、上記処理液回収路22に切換可能な処理
液回収弁44を付設するとともに、処理液供給路7の圧
送ポンプ上流側と処理液回収路22とを上記処理液回収
弁44を介して接続する。FIG. 6 is a schematic system diagram of an immersion treatment apparatus according to a sixth embodiment of the present invention. The thick line in FIG. 6 (A) indicates the treatment liquid circulation path in the case of chemical treatment, and in FIG. The thick line indicates the pure water path and the processing solution circulation path in the case of pure water processing. This immersion treatment apparatus also performs circulation filtering and temperature adjustment of the treatment liquid as in the fifth embodiment (FIG. 5). That is, as shown in FIGS. 6A and 6B, in the immersion treatment apparatus of the fifth embodiment (FIG. 5), a switchable treatment liquid recovery valve 44 is attached to the treatment liquid recovery passage 22 and the treatment liquid is also added. The upstream side of the pressure feed pump of the supply passage 7 and the treatment liquid recovery passage 22 are connected via the treatment liquid recovery valve 44.
【0057】薬液処理が行われる場合には、図6(A)に
示すように、基板処理槽1のオーバーフロー液回収部4
1から、処理液は排液弁47を介して処理液回収路22
を流下し、処理液貯留容器6を介さず上記処理液回収弁
44を介して処理液供給路7に流入し、フィルタ10に
より濾過されてリフレッシュされるとともに、温度調整
された後、再び基板処理槽1に還流する。一方、純水処
理が行われる場合には、図6(B)に示すように、圧送ポ
ンプ15で汲み上げられた処理液は、フィルタ10によ
りリフレッシュされるとともに、温度調整された後、処
理液回収路22を流下し、上記処理液回収弁44を介し
て処理液貯留容器6に還流する。When the chemical liquid processing is performed, as shown in FIG. 6 (A), the overflow liquid recovery unit 4 of the substrate processing bath 1 is used.
From 1, the processing liquid is supplied to the processing liquid recovery path 22 via the drain valve 47.
Flown into the processing liquid supply passage 7 via the processing liquid recovery valve 44 without passing through the processing liquid storage container 6, filtered by the filter 10 to be refreshed, and after the temperature is adjusted, the substrate is processed again. Reflux to tank 1. On the other hand, when the pure water treatment is performed, as shown in FIG. 6B, the treatment liquid pumped up by the pressure pump 15 is refreshed by the filter 10 and after the temperature is adjusted, the treatment liquid is recovered. It flows down the path 22 and returns to the treatment liquid storage container 6 via the treatment liquid recovery valve 44.
【0058】上記実施例6においては、薬液処理が行わ
れる際には、処理液は圧送ポンプ15で吸引されて処理
液回収路22を流下することになるので、処理液回収路
22の管径が細くても単に落差で流下する実施例5と比
較して流下する処理液の流量は格段に多くなる。つま
り、処理液回収路22は管径の細いもので足りるという
利点がある。In the sixth embodiment, when the chemical liquid treatment is performed, the treatment liquid is sucked by the pressure pump 15 and flows down the treatment liquid recovery passage 22. Therefore, the diameter of the treatment liquid recovery passage 22 is reduced. Even if the thickness is small, the flow rate of the processing liquid flowing down is remarkably increased as compared with the case of Example 5 in which the flow rate is simply dropped. That is, there is an advantage that the treatment liquid recovery passage 22 need only have a small pipe diameter.
【0059】図7は本発明の実施例7に係る浸漬処理装
置の概略系統図を示す。この実施例7は、実施例6(図
6)と同様の浸漬処理装置を3組並設して構成したもの
である。この実施例7では、図7に示すように、各基板
処理槽1においてそれぞれ所定の処理液QA〜QCにより
前記類型の薬液処理が別々に行われ、ウエハWを表面処
理した各処理液QA〜QCは、各処理液貯留容器6に回収
されて再利用される。また、循環フィルタリングにより
各処理液QA〜QCをリフレッシュさせることやインライ
ンヒータ81により各処理液QA〜QCの温度調整を行う
こともできる。FIG. 7 is a schematic system diagram of an immersion treatment apparatus according to the seventh embodiment of the present invention. The seventh embodiment is configured by arranging three sets of dipping treatment devices similar to those of the sixth embodiment (FIG. 6) in parallel. In Example 7, as shown in FIG. 7, each respectively, in the substrate processing chamber 1 the chemical treatment of the type with a predetermined processing solution Q A to Q C is carried out separately, each processing solution and the wafer W surface-treated Q a to Q C is recycled is collected in the processing liquid storage container 6. It is also possible to adjust the temperature of each processing solution Q A to Q C by or in-line heater 81 to refresh each processing solution Q A to Q C by the circulation filtering.
【0060】図8は本発明の実施例8に係る浸漬処理装
置の概略系統図を示す。この浸漬処理装置は、実施例7
(図7)において基板処理槽1のうちの1槽を、純水処理
用のリンス専用槽に設定したものであり、他の2組にお
いて、薬液処理及び純水処理が行われる間に処理液の循
環フィルタリングや温度調整を実行する点は実施例6
(図6)と同様である。この実施例8では、2個の基板
処理槽1の夫々で処理液QA 又はQB による薬液処理が
施された後、引き続き軽く純水処理が行なわれ、さらに
リンス専用槽1で純水DW による純水処理が行われる。
これにより、各基板処理槽1で薬液処理と純水処理を順
次行う場合に比べて、強力にウエハWをリンスでき、純
水処理の所要時間が短縮されてスループットが向上す
る。FIG. 8 is a schematic system diagram of an immersion treatment apparatus according to the eighth embodiment of the present invention. This immersion treatment apparatus is used in Example 7
In FIG. 7, one of the substrate processing baths 1 is set as a rinse-only bath for pure water treatment, and in the other two sets, the treatment liquid is used while the chemical liquid treatment and the pure water treatment are performed. Example 6 is the point where the circulation filtering and the temperature adjustment are performed.
(FIG. 6). In the eighth embodiment, after the chemical treatment with the treatment liquid Q A or Q B is performed in each of the two substrate treatment tanks 1, light pure water treatment is continuously performed, and pure water D is further used in the rinse dedicated tank 1. Pure water treatment with W is performed.
As a result, the wafer W can be rinsed more strongly than in the case where the chemical solution treatment and the pure water treatment are sequentially performed in each substrate treatment tank 1, the time required for the pure water treatment is shortened, and the throughput is improved.
【0061】図9及び図10は本発明の実施例9に係る
浸漬処理装置の概略系統図を示し、図9中の太線は薬液
処理の場合の処理液循環経路を、図10中の太線は純水
処理の場合の純水経路及び処理液循環経路を示す。この
実施例9は、単一の基板処理槽1を用いる点で、また、
薬液処理及び純水処理が行われる間に処理液の循環フィ
ルタリングや温度調整を実行する点で実施例6(図6)と
共通する。9 and 10 are schematic system diagrams of an immersion treatment apparatus according to the ninth embodiment of the present invention. The thick line in FIG. 9 indicates the treatment liquid circulation path in the case of chemical treatment, and the thick line in FIG. The pure water path and the processing solution circulation path in the case of pure water processing are shown. This Example 9 uses a single substrate processing bath 1, and
This embodiment is common to the sixth embodiment (FIG. 6) in that the circulation filtering and the temperature adjustment of the processing liquid are executed during the chemical liquid processing and the pure water processing.
【0062】この実施例9では、図9及び図10中の処
理液供給路7のうち、そのポンプ上流側の開閉弁9と処
理液導入弁8との間は、処理液回収時において処理液回
収路22をも兼ねる。図9において、薬液処理が行われ
る場合には、処理液供給路7の上記開閉弁9と処理液導
入弁8と、排液路42の切り換え可能な排液弁47aが
閉弁され、その他の弁は閉弁される。処理液Qは基板処
理槽1内に満たされて十分にオーバーフローするまで圧
送ポンプ15より汲み上げられる。In the ninth embodiment, between the processing liquid supply passage 7 shown in FIGS. 9 and 10, between the opening / closing valve 9 on the upstream side of the pump and the processing liquid introducing valve 8, the processing liquid is collected at the time of collecting the processing liquid. It also serves as the recovery path 22. In FIG. 9, when the chemical liquid treatment is performed, the open / close valve 9 and the treatment liquid introduction valve 8 of the treatment liquid supply passage 7 and the switchable drainage valve 47a of the drainage passage 42 are closed, and other The valve is closed. The processing liquid Q is pumped up by the pressure pump 15 until the substrate processing tank 1 is filled with the processing liquid Q and sufficiently overflows.
【0063】その後処理液供給路7のポンプ上流側の開
閉弁9は閉止される。基板処理槽1からオーバーフロー
した処理液Qは、オーバーフロー回収部41から排液路
42及び排液弁47aを介して処理液回収路22を流下
し、処理液貯留容器6を介さないで処理液供給路7のポ
ンプ上流側に流入し、再び圧送ポンプ15で汲み上げら
れ、フィルタ10により濾過されてリフレッシュされた
後、基板処理槽1に還流する。つまり、基板の薬液処理
が行われる間に処理液の循環フィルタリングが行われ
る。After that, the on-off valve 9 on the upstream side of the pump in the processing liquid supply passage 7 is closed. The processing liquid Q overflowing from the substrate processing bath 1 flows down from the overflow recovery unit 41 through the processing liquid recovery path 22 through the drainage path 42 and the drainage valve 47a, and the processing solution is supplied without passing through the processing solution storage container 6. After flowing into the upstream side of the pump of the path 7, pumped by the pressure pump 15 again, filtered by the filter 10 and refreshed, it is returned to the substrate processing bath 1. That is, the processing solution is circulated and filtered while the substrate is processed with the chemical solution.
【0064】薬液処理が終了すると、処理液供給路7の
上記開閉弁9と処理液導入弁8は閉弁され、排液路42
の排液弁47a及び処理液供給路7と処理液回収路22
とを連通する給排液切換弁13が開弁される。さらに、
圧送ポンプ15と処理液導入弁8との間において導出さ
れた後段の処理液回収路22aが処理液回収弁44を介
して処理液貯溜容器6に連通され、その他の弁は閉弁さ
れる。そして基板処理槽1内の処理液Qは、処理液回収
路22→処理液供給路7の上流側→圧送ポンプ15→後
段の処理液回収路22a→処理液回収弁44を経て処理
液貯留容器6内に回収される。When the chemical liquid treatment is completed, the open / close valve 9 and the treatment liquid introduction valve 8 in the treatment liquid supply passage 7 are closed, and the drainage passage 42.
Drain valve 47a, processing liquid supply path 7 and processing liquid recovery path 22
The supply / drainage liquid switching valve 13 that communicates with and is opened. further,
The treatment liquid recovery passage 22a at the latter stage, which is led out between the pressure pump 15 and the treatment liquid introduction valve 8, communicates with the treatment liquid storage container 6 via the treatment liquid recovery valve 44, and the other valves are closed. Then, the processing liquid Q in the substrate processing tank 1 passes through the processing liquid recovery path 22 → the upstream side of the processing liquid supply path 7 → the pressure pump 15 → the subsequent processing liquid recovery path 22a → the processing liquid recovery valve 44 and the processing liquid storage container. Recovered within 6.
【0065】図10において、処理液の回収を終えて純
水処理に移行する場合には、上記開閉弁9が開弁され、
給排液切換弁13は閉弁され、排液路42の排液弁47
aは排液ドレン43a側に切り換えられる。処理液貯留
容器6内に回収された処理液Qは、圧送ポンプ15で汲
み上げられ、フィルタ10→上記処理液回収路22a→
処理液回収弁44を介して循環フィルタリングが行われ
る。In FIG. 10, when the treatment liquid is recovered and the treatment proceeds to pure water treatment, the open / close valve 9 is opened,
The supply / drainage liquid switching valve 13 is closed, and the drainage valve 47 in the drainage passage 42 is provided.
a is switched to the drain 43a side. The treatment liquid Q collected in the treatment liquid storage container 6 is pumped up by the pressure feed pump 15, and the filter 10 → the treatment liquid recovery passage 22a →
Circulation filtering is performed via the treatment liquid recovery valve 44.
【0066】次いで、給排液切換弁13は閉弁され、排
液路42の第1排液弁47aは排水用のドレン43a側
に切り換えられ、純水供給路3aの純水導入弁27が開
弁される。純水DW は基板処理槽1内に満たされてオー
バーフローしつつ、ウエハをリンスする。基板処理槽1
からオーバーフローした純水DW は、オーバーフロー回
収部41→排液路42→第1の排液弁47a→第2の排
液弁47b→排水用排液路21aを経て排水用ドレン4
3aに排出される。そしてウエハの純水処理の間も処理
液の循環フィルタリングが行われる。Next, the supply / drainage liquid switching valve 13 is closed, the first drainage valve 47a of the drainage passage 42 is switched to the drain 43a side for drainage, and the pure water introduction valve 27 of the pure water supply passage 3a is opened. The valve is opened. The pure water D W fills the substrate processing tank 1 and overflows, rinsing the wafer. Substrate processing tank 1
The pure water D W that has overflowed from the drainage drain 4 passes through the overflow recovery unit 41 → the drainage passage 42 → the first drainage valve 47a → the second drainage valve 47b → the drainage drainage passage 21a.
It is discharged to 3a. Then, the circulating filtering of the processing liquid is performed during the pure water processing of the wafer.
【0067】この実施例9は、上述した循環フィルタリ
ングの他に、下記のような豊富な機能を備えている。図
9及び図10に示すように、上記基板処理槽1は排液槽
2内の超音波洗浄部34の上側に設置されており、超音
波発振器35により超音波洗浄部34を介してウエハを
強力に洗浄しすることができる(以下、超音波洗浄機能
という)。上記純水供給路3は、処理液供給路7に接続
される純水導入路3aとシャワーパイプ17に接続され
るシャワー導入路3bとに分岐され、純水導入路3aに
は純水導入弁を構成するユニット弁27が付設され、シ
ャワー導入路3bには同様のユニット弁28が付設され
る。この純水シャワーは、薬液処理をする前にウエハを
純水で軽く洗浄する場合に用いられる(以下純水シャワ
ー機能という)。なお、ユニット弁27・28からの余剰
の純水は後述する純水回収用ドレン43bに分離排出さ
れる。The ninth embodiment has various functions as described below, in addition to the above-mentioned circular filtering. As shown in FIGS. 9 and 10, the substrate processing tank 1 is installed above the ultrasonic cleaning unit 34 in the drainage tank 2, and an ultrasonic oscillator 35 is used to clean the wafer through the ultrasonic cleaning unit 34. It can be strongly cleaned (hereinafter referred to as ultrasonic cleaning function). The pure water supply passage 3 is branched into a pure water introduction passage 3a connected to the treatment liquid supply passage 7 and a shower introduction passage 3b connected to the shower pipe 17, and a pure water introduction valve is provided in the pure water introduction passage 3a. A unit valve 27 constituting the above is attached, and a similar unit valve 28 is attached to the shower introduction passage 3b. This pure water shower is used when the wafer is lightly washed with pure water before chemical treatment (hereinafter referred to as pure water shower function). Excess pure water from the unit valves 27 and 28 is separated and discharged to a pure water recovery drain 43b described later.
【0068】上記排液路42は、切り替え可能な第1排
液弁47aを介して排水路21と処理液回収路22とに
分岐される。上記排水路21は第2排液弁47bを介し
て排水用排液路21aと回収用排液路21bに分岐され
る。排水用排液路21aは排水用ドレン43aに、回収
用排液路21bは純水回収用ドレン43bに接続され
る。上記基板処理槽1には急速排水用のクイックドレン
弁32が付設されており、純水排液を基板処理槽1から
排出する際には、クイックドレン弁32を開けて純水排
液を排液槽2内に流下させ、第1排液弁47aと第2排
液弁47bを適宜切り換え操作して排水用ドレン43a
又は純水回収用ドレン43bに分離排出させる(以下排
水の分離排出機能という)。The drainage passage 42 is branched into the drainage passage 21 and the treatment liquid recovery passage 22 via a switchable first drainage valve 47a. The drainage passage 21 is branched into a drainage drainage passage 21a and a recovery drainage passage 21b via a second drainage valve 47b. The drainage drainage channel 21a is connected to the drainage drain 43a, and the recovery drainage channel 21b is connected to the pure water recovery drain 43b. The substrate processing bath 1 is provided with a quick drain valve 32 for rapid drainage. When the pure water drainage liquid is drained from the substrate processing bath 1, the quick drain valve 32 is opened to drain the pure water drainage liquid. It is made to flow down into the liquid tank 2, and the first drain valve 47a and the second drain valve 47b are appropriately switched and operated to drain the drain 43a.
Alternatively, it is separated and discharged to the pure water recovery drain 43b (hereinafter referred to as a drainage separate discharge function).
【0069】上記処理液供給路7は、純水導入路3aの
接続部と処理液導入弁8との間において、給排切換弁1
3を介して処理液回収路22に連通され、処理液回収路
22の下端は処理液供給路7に付設された開閉弁9と圧
送ポンプ15との間に連通される。さらに、圧送ポンプ
15と処理液導入弁8との間において、後段の処理液回
収路22aと処理液排液路21cとが導出される。後段
の処理液回収路22aは処理液回収弁44を介して処理
液貯溜容器6に連通され、処理液排液路21cは第3排
液弁47cを介して処理液回収用ドレン43bに接続さ
れる。The treatment liquid supply passage 7 is provided between the connection portion of the pure water introduction passage 3a and the treatment liquid introduction valve 8 and the supply / discharge switching valve 1 is provided.
3, the lower end of the processing liquid recovery passage 22 is connected between the opening / closing valve 9 attached to the processing liquid supply passage 7 and the pressure feed pump 15. Further, between the pressure pump 15 and the treatment liquid introduction valve 8, a treatment liquid recovery passage 22a and a treatment liquid drain passage 21c in the latter stage are led out. The processing liquid recovery passage 22a in the latter stage is connected to the processing liquid storage container 6 via the processing liquid recovery valve 44, and the processing liquid drainage passage 21c is connected to the processing liquid recovery drain 43b via the third drainage valve 47c. It
【0070】処理液Qを処理液貯溜容器6に回収する場
合には、前記のように、基板処理槽1→処理液供給路7
→給排液切換弁13→処理液回収路22→圧送ポンプ1
5→フィルタ10→第2の処理液回収路22a(処理液
回収弁44)を経て処理液Qを処理液貯溜容器6に回収
する。また、用尽した処理液Qを廃棄する場合には、上
記処理液回収路22aの処理液回収弁44を閉弁すると
ともに第3排液弁47cを開き、圧送ポンプ15により
処理液Qを処理液回収用ドレン43cに排出する。これ
により、処理液Qは処理液貯溜容器6と処理液回収用ド
レン43cとに分離排出される(以下処理液の分離排出
機能という)。When the processing liquid Q is collected in the processing liquid storage container 6, as described above, the substrate processing tank 1 → the processing liquid supply path 7
→ Supply / Drainage liquid switching valve 13 → Treatment liquid recovery path 22 → Pressure pump 1
The treatment liquid Q is collected in the treatment liquid storage container 6 through 5 → filter 10 → the second treatment liquid recovery passage 22a (treatment liquid recovery valve 44). When the used processing liquid Q is exhausted, the processing liquid recovery valve 44 of the processing liquid recovery passage 22a is closed and the third drain valve 47c is opened, and the processing liquid Q is processed by the pressure pump 15. The liquid is discharged to the liquid collecting drain 43c. As a result, the treatment liquid Q is separated and discharged into the treatment liquid storage container 6 and the treatment liquid recovery drain 43c (hereinafter referred to as a treatment liquid separation and discharge function).
【0071】上記基板処理槽1及び処理液貯留容器6内
には恒温ヒータ5が浸漬配置され、上述した循環フィル
タリングと相俟って処理液を均一な温度に調節できる
(以下処理液の恒温維持機能という)。これにより、特
に高温薬液処理においては、所定温度の処理液Qを基板
処理槽1内に供給して直ちに洗浄処理をすることが可能
になり、スループットが向上する。また、上記基板処理
槽1内にはバブリング手段24が浸漬配置され、基板の
洗浄処理に際して、ガス供給路23よりN2 ガスを供給
して均一な処理液Qの均一な上昇流を形成するととも
に、洗浄処理を促進するように構成されている(以下処
理液のバブリング機能という)。このガス供給路23に
は、ガス導入弁37、ユニット弁38及びガスフィルタ
39が付設されている。A constant temperature heater 5 is immersed in the substrate processing bath 1 and the processing liquid storage container 6 so that the processing liquid can be adjusted to a uniform temperature in combination with the circulation filtering described above (hereinafter, the processing liquid is kept at a constant temperature). Function). As a result, particularly in the high temperature chemical liquid processing, the processing liquid Q having a predetermined temperature can be supplied into the substrate processing bath 1 to immediately perform the cleaning processing, and the throughput is improved. Further, the bubbling means 24 is immersed in the substrate processing bath 1, and N 2 gas is supplied from the gas supply passage 23 to form a uniform upward flow of the processing liquid Q during the cleaning process of the substrate. , Is configured to accelerate the cleaning process (hereinafter referred to as a bubbling function of the processing liquid). A gas introduction valve 37, a unit valve 38, and a gas filter 39 are attached to the gas supply path 23.
【0072】上記処理液貯溜容器6には、複数の薬液導
入弁48a・48b・48cを介してそれぞれ薬液q1
・q2・q3 を注入し得るように構成されており、これ
らの薬液q1・q2・q3 を調合して所要の処理液を作る
ことができる(以下処理液の調合機能という)。なお、
上記基板処理槽1及び処理液貯溜容器6には、処理液Q
の液面レベルや残量、温度等を検出する各種の検知器1
8が設けられている。The treatment liquid storage container 6 is supplied with the chemical liquid q 1 through a plurality of chemical liquid introduction valves 48a, 48b and 48c, respectively.
It is configured so that q 2 · q 3 can be injected, and these chemicals q 1 · q 2 · q 3 can be mixed to form a required processing liquid (hereinafter referred to as a processing liquid mixing function) . In addition,
In the substrate processing tank 1 and the processing liquid storage container 6, the processing liquid Q
Detectors for detecting liquid level, remaining amount, temperature, etc. 1
8 are provided.
【0073】図11、図12及び図13は、それぞれ本
発明の実施例10に係る浸漬処理装置の概略系統図を示
し、図11中の太線は薬液処理の場合の処理液循環経路
を、図12及び図13中の太線はそれぞれ純水処理の場
合の純水経路及び処理液循環経路を示す。この浸漬処理
装置は、単一の基板処理槽1に対して処理液の異なる複
数の処理液貯溜容器6A・6Bを設け、処理液供給路7A
・7B及び処理液回収路22a・22bを各処理液貯溜
容器6A・6Bに対して切り換え可能に構成した点が上記
実施例9と基本的に異なる。FIG. 11, FIG. 12 and FIG. 13 each show a schematic system diagram of an immersion treatment apparatus according to the tenth embodiment of the present invention. The thick line in FIG. 11 shows the treatment solution circulation route in the case of chemical treatment. 12 and 13 indicate the pure water path and the processing solution circulation path in the case of the pure water processing, respectively. In this immersion processing apparatus, a plurality of processing liquid storage containers 6 A and 6 B having different processing liquids are provided for a single substrate processing tank 1, and a processing liquid supply path 7 A is provided.
Points to switchably configured for · 7 B and the treatment liquid recovery passage 22a · 22b of each processing solution reservoir vessel 6 A · 6 B are different in the above Example 9 basically.
【0074】この実施例10では、実施例9と同様に処
理液供給路7の一部分(開閉弁9aと処理液導入弁8と
の間)が、処理液回収中における処理液回収路22をも
兼ねる。また、上記処理液供給路7に複数の処理液貯溜
容器6A ・6B を切り換え可能に接続する開閉弁9a・
9bは、請求項5における処理液選択弁82に相当す
る。さらに、処理液回収路22を兼ねる処理液供給路7
の一部分(開閉弁9aと処理液導入弁8との間)に複数
の処理液貯溜容器6A ・6B を切り換え可能に接続する
処理液回収弁44a・44bは請求項5における処理液
戻選択弁83に相当する。In the tenth embodiment, as in the ninth embodiment, a part of the treatment liquid supply passage 7 (between the on-off valve 9a and the treatment liquid introduction valve 8) also includes the treatment liquid recovery passage 22 during the treatment liquid recovery. Also serve. The on-off valve 9a · connecting the switchable plurality of processing liquid reservoir chamber 6 A · 6 B to the treatment liquid supply channel 7
9b corresponds to the processing liquid selection valve 82 in claim 5. Further, the processing liquid supply path 7 that also serves as the processing liquid recovery path 22.
Selection process liquid recovery valve 44a · 44b for connecting the portion to be switched a plurality of processing liquid reservoir chamber 6 A · 6 B (between the on-off valve 9a and the treatment liquid inlet valve 8) back treatment liquid in Claim 5 It corresponds to the valve 83.
【0075】上記基板処理槽1及びオーバーフロー回収
部41にそれぞれ急速排水用のクイックドレン弁32、
33が付設されており、基板処理槽1及びオーバーフロ
ー回収部41を空にする場合には迅速に排液し得るよう
に構成されている。また、フィルタ10の一次室と上記
オーバーフロー回収部41とが、連通路85により逆止
弁86を介して連通されており、フィルタ10の目詰ま
りが生じた場合には、処理液をオーバーフロー回収部4
1に圧送し得るように構成されている。A quick drain valve 32 for rapid drainage is provided in each of the substrate processing tank 1 and the overflow recovery section 41, respectively.
33 is attached, and when the substrate processing tank 1 and the overflow recovery unit 41 are emptied, liquid can be quickly drained. Further, the primary chamber of the filter 10 and the overflow recovery unit 41 are communicated with each other by the communication passage 85 via the check valve 86, and when the filter 10 is clogged, the processing liquid is overflow recovered. Four
It is configured so that it can be pumped to unit 1.
【0076】図11において、処理液QA による薬液処
理が行われる場合には、処理液供給路7上流側の第1の
開閉弁9aと、処理液導入弁8と、その下流側の開閉弁
14と、切り換え可能な第1排液弁47aが閉弁され、
その他の弁は閉弁される。処理液QA は基板処理槽1内
に満たされて十分にオーバーフローするまで圧送ポンプ
15より汲み上げられ、その後開閉弁9aは閉弁され、
第1排液弁47aは開弁される。基板処理槽1からオー
バーフローした処理液QA は、オーバーフロー回収部4
1→排液路42→第1排液弁47a→処理液回収路22
→処理液供給路7のポンプ上流側→圧送ポンプ15→フ
ィルタ10→処理液導入弁8→開閉弁14を経て基板処
理槽1還流する。つまり、処理液の循環フィルタリング
を実行しつつウエハの薬液処理が行われる。In FIG. 11, when the chemical treatment with the treatment liquid Q A is performed, the first on-off valve 9a on the upstream side of the treatment liquid supply path 7, the treatment liquid introducing valve 8 and the on-off valve on the downstream side thereof. 14 and the switchable first drain valve 47a are closed,
The other valves are closed. The treatment liquid Q A is pumped up from the pressure feed pump 15 until the substrate treatment tank 1 is filled and overflows sufficiently, and then the on-off valve 9a is closed.
The first drain valve 47a is opened. The processing solution Q A that overflows from the substrate processing tank 1 is collected in the overflow recovery unit 4
1 → drainage path 42 → first drainage valve 47a → processing liquid recovery path 22
→ Pump upstream side of the processing liquid supply path 7 → Pressurizing pump 15 → Filter 10 → Processing liquid introducing valve 8 → Returning to the substrate processing bath 1 through the on-off valve 14. That is, the chemical treatment of the wafer is performed while the circulation filtering of the treatment liquid is performed.
【0077】薬液処理が終了すると、処理液供給路7上
流側の開閉弁9a9bと処理液導入弁8は閉弁され、排
液路42の第1排液弁47aと、処理液供給路7と処理
液回収路22とを連通する給排液切換弁13が開弁され
る。さらに、圧送ポンプ15と処理液導入弁8との間に
おいて導出された別の処理液回収路22aが処理液回収
弁44を介して処理液貯溜容器6に連通される。その他
の弁は閉弁され、基板処理槽1内の処理液Qは処理液貯
留容器6内に回収される。When the chemical liquid treatment is completed, the open / close valves 9a9b and the treatment liquid introduction valve 8 on the upstream side of the treatment liquid supply passage 7 are closed, and the first drainage valve 47a of the drainage passage 42 and the treatment liquid supply passage 7 are connected. The supply / discharge liquid switching valve 13 that communicates with the processing liquid recovery passage 22 is opened. Further, another processing liquid recovery path 22 a led out between the pressure feed pump 15 and the processing liquid introduction valve 8 is connected to the processing liquid storage container 6 via the processing liquid recovery valve 44. The other valves are closed, and the processing liquid Q in the substrate processing tank 1 is collected in the processing liquid storage container 6.
【0078】処理液の回収を終えて純水処理に移行する
場合には、図12に示すように、開閉弁9aが開弁さ
れ、給排液切換弁13は閉弁され、排液路42の第1排
液弁47aは排水用ドレン43a側に切り換えられる。
処理液貯留容器6A 内に回収された処理液QA は、圧送
ポンプ15で汲み上げられてフィルタ10、第2の処理
液回収路22aを介して循環フィルタリングが行われ
る。次いで給排液切換弁13は閉弁され、排液路42の
第1排液弁47aは排水用のドレン43a側に切り換え
られ、純水供給路3aの純水導入弁27が開弁され、純
水DW は基板処理槽1内に満たされてオーバーフローし
つつ、基板Wをリンスする。基板処理槽1からオーバー
フローした純水DW は、オーバーフロー回収部41→排
液路42→第1の排液弁47a→第2排液弁47bを経
て排水用ドレン43aに排出される。そして基板の純水
処理の間も処理液QA の循環フィルタリングが行われ
る。When the process liquid is recovered and the process proceeds to the pure water process, as shown in FIG. 12, the open / close valve 9a is opened, the supply / discharge liquid switching valve 13 is closed, and the discharge passage 42 is opened. The first drain valve 47a is switched to the drain 43a side for drainage.
The treatment liquid Q A recovered in the treatment liquid storage container 6 A is pumped up by the pressure pump 15 and circulated and filtered through the filter 10 and the second treatment liquid recovery passage 22a. Then, the supply / drainage liquid switching valve 13 is closed, the first drainage valve 47a of the drainage passage 42 is switched to the drain 43a side for drainage, and the pure water introduction valve 27 of the pure water supply passage 3a is opened. The pure water D W rinses the substrate W while being filled and overflowing in the substrate processing bath 1. The pure water D W overflowing from the substrate processing tank 1 is discharged to the drain 43a via the overflow recovery unit 41 → the drainage passage 42 → the first drainage valve 47a → the second drainage valve 47b. The circulating filtering of the processing liquid Q A is performed during the pure water processing of the substrate.
【0079】図13において、処理液QB による薬液処
理が行われる場合には、上記基板処理槽1に連通する後
段の処理液供給路7b対して別の開閉弁19b(処理液
選択弁82)を介して処理液貯溜容器6B が接続され、
この処理液貯溜容器6B に対して別の処理液回収弁44
b(処理液選択弁83)を介して処理液回収路22bが
接続される。つまり、ウエハの薬液処理が行われる時に
は、図11に示すのと同様に、処理液の循環フィルタリ
ングが実行され、ウエハの純水処理が行われる時には、
図13において処理液QB の循環フィルタリングが実行
される。なお、この実施例10においても、実施例9
(図9)と同様に超音波洗浄機能、純水シャワー機能、
純水の分離排出機能、処理液の分離排出機能、及び処理
液恒温機能を発揮するように構成されている。In FIG. 13, in the case where the chemical liquid treatment is performed by the treatment liquid Q B , another on-off valve 19b (treatment liquid selection valve 82) is provided for the treatment liquid supply passage 7b in the latter stage communicating with the substrate treatment tank 1. The processing liquid storage container 6 B is connected via
Another process liquid recovery valve for this treatment liquid reservoir chamber 6 B 44
The treatment liquid recovery passage 22b is connected via b (treatment liquid selection valve 83). In other words, when the wafer is subjected to the chemical treatment, the circulation filtering of the treatment liquid is executed as in the case shown in FIG. 11, and when the wafer is subjected to the pure water treatment,
In FIG. 13, the circulation filtering of the processing liquid Q B is executed. In addition, also in this tenth embodiment, the ninth embodiment
As in (Fig. 9), ultrasonic cleaning function, pure water shower function,
It is configured to exhibit a pure water separation / discharge function, a processing liquid separation / discharge function, and a processing liquid constant temperature function.
【0080】図14及び図15は、それぞれ本発明の実
施例11に係る浸漬処理装置の概略系統図を示し、図1
4中の太線は薬液処理の場合の処理液循環経路を、図1
5中の太線は純水処理の場合の純水経路及び処理液循環
経路を示す。この浸漬処理装置は、複数の基板処理槽1
A・1B に対して処理液の異なる複数の処理液貯溜容器
6A・6Bを設け、処理液供給路7A・7B及び処理液回収
路22a・22bを各基板処理槽1A・1B 及び処理液
貯溜容器6A・6Bに対して切り換え可能に構成した点が
上記実施例10と異なり、その他の点は実施例10と同
様に構成されている。なお、既述の部材については同一
の符号を付して重複する説明を省略する。14 and 15 are schematic system diagrams of an immersion treatment apparatus according to Embodiment 11 of the present invention.
The thick line in 4 indicates the processing solution circulation route in the case of chemical processing,
Thick lines in 5 indicate a pure water path and a processing solution circulation path in the case of pure water processing. This immersion processing apparatus is provided with a plurality of substrate processing tanks 1.
Treatment liquid differs a plurality of processing liquid reservoir chamber 6 A · 6 B of provided for A · 1 B, the processing liquid the substrate supply path 7 A · 7 B and the treatment liquid recovery passage 22a · 22b treatment tank 1 A · 1 B and the treatment liquid storage containers 6 A and 6 B are different from the tenth embodiment in that they are switchable, and other points are the same as in the tenth embodiment. The same members as those described above are designated by the same reference numerals, and redundant description will be omitted.
【0081】この浸漬処理装置では、図14に示すよう
に、各基板処理槽1においてそれぞれ処理液QA 及び処
理液QB による薬液処理と純水処理が適宜選択的に並行
して行われる。その場合の薬液処理や純水処理は、実施
例10に準じて行われる。即ち、薬液処理が行われる場
合には、図14に示すように、各処理液QA・QBはそれ
ぞれの基板処理槽1内に満たされ、オーバーフローした
処理液QA ・QBは、オーバーフロー回収部41→排液路
42→第1排液弁47a→処理液回収路22→処理液供
給路7のポンプ上流側→圧送ポンプ15→フィルタ10
→処理液導入弁8→開閉弁14を経て基板処理槽1還流
する。つまり、処理液の循環フィルタリングを実行しつ
つウエハの薬液処理が行われる。In this dipping treatment apparatus, as shown in FIG. 14, the chemical treatment with the treatment liquid Q A and the treatment liquid Q B and the pure water treatment are appropriately selectively performed in parallel in each substrate treatment tank 1. In that case, the chemical solution treatment and the pure water treatment are performed according to the tenth embodiment. That is, when the chemical treatment is performed, as shown in FIG. 14, the treatment liquids Q A and Q B are filled in the respective substrate treatment tanks 1 and the overflowed treatment liquids Q A and Q B are overflowed. Recovery part 41 → drainage path 42 → first drainage valve 47a → processing liquid recovery path 22 → pump upstream side of processing liquid supply path 7 → pressure pump 15 → filter 10
→ Treatment liquid introduction valve 8 → Return to the substrate treatment bath 1 through the on-off valve 14. That is, the chemical treatment of the wafer is performed while the circulation filtering of the treatment liquid is performed.
【0082】処理液の回収を終えて純水処理に移行する
場合には、図15に示すように、各基板処理槽1内の処
理液QA ・QB はそれぞれ処理液貯留容器6A ・6B 内
に回収される。処理液貯留容器6A ・6B 内に回収され
た処理液QA ・QB は、それぞれ圧送ポンプ15で汲み
上げられてフィルタ10、後段の処理液回収路22aを
介して循環フィルタリングが行われる。純水DW はそれ
ぞれの基板処理槽1内に満たされてオーバーフローしつ
つ、ウエハをリンスする。各基板処理槽1からオーバー
フローした純水DW は、それぞれオーバーフロー回収部
41→排液路42→第1の排液弁47a→第2排液弁4
7bを介して排水用ドレン43aに排出される。そして
ウエハの純水処理の間も処理液QA ・6B の循環フィル
タリングが行われる。When the treatment liquid is recovered and the process proceeds to the pure water treatment, as shown in FIG. 15, the treatment liquids Q A and Q B in the respective substrate treatment tanks 1 are treated in the treatment liquid storage containers 6 A and 6 A , respectively. Recovered in 6 B. The treatment liquids Q A and Q B recovered in the treatment liquid storage containers 6 A and 6 B are respectively pumped up by the pressure pump 15 and circulated and filtered through the filter 10 and the treatment liquid recovery passage 22 a in the subsequent stage. The pure water D W rinses the wafer while filling and overflowing the respective substrate processing baths 1. The deionized water D W overflowing from each substrate processing tank 1 is overflow recovery unit 41 → drainage channel 42 → first drainage valve 47a → second drainage valve 4 respectively.
It is discharged to the drain 43a via 7b. The circulating filtering of the treatment liquid Q A , 6 B is performed during the pure water treatment of the wafer.
【0083】上記実施例11では、2つの基板処理槽と
2つの処理液貯溜容器とを選択的に接続するものについ
て例示したが、それらの基板処理槽と処理液貯溜容器と
をさらに増やすこともできる。その場合には各基板処理
槽により複数の薬液処理を並行して実行できるので、一
層スループットが向上するまた、各基板処理槽において
処理液QA 及び処理液QB による薬液処理と純水処理が
適宜選択的に並行して行われるものとして説明したが、
各基板処理槽毎にそれぞれ専用の薬液処理を行うように
してもよい。In the eleventh embodiment, the example in which the two substrate processing baths and the two processing liquid storage containers are selectively connected has been described, but the substrate processing baths and the processing liquid storage containers may be further increased. it can. In that case, since a plurality of chemical liquid treatments can be executed in parallel by the respective substrate treatment baths, the throughput is further improved, and the chemical liquid treatment and the pure water treatment by the treatment liquids Q A and Q B are performed in each substrate treatment bath. Although it has been explained that it is performed selectively in parallel as appropriate,
You may make it perform a chemical | medical solution processing for each each substrate processing tank.
【0084】[0084]
【発明の効果】請求項1の発明では、前記のように構成
され作用することから、基板処理槽からオーバーフロー
した処理液は、処理液回収弁及び処理液回収路を介して
処理液貯留容器に回収され、再び基板処理槽に循環して
再利用できるので、処理液の消費量が大幅に減らすこと
ができる。また、単一の基板処理槽で薬液処理と純水処
理とを実行できるので、基板処理装置の大型化を防止す
ることができる。請求項2の発明では、前記のように構
成され作用することから、薬液処理及び純水処理が行わ
れる間に処理液はフィルタリングによりリフレッシュさ
れる。According to the first aspect of the present invention, the processing liquid overflowing from the substrate processing tank is stored in the processing liquid storage container via the processing liquid recovery valve and the processing liquid recovery passage because it is constructed and operates as described above. Since the recovered liquid is recycled to the substrate processing tank and can be reused, the consumption of the processing liquid can be significantly reduced. Further, since the chemical solution treatment and the pure water treatment can be performed in a single substrate processing tank, it is possible to prevent the substrate processing apparatus from becoming large. According to the second aspect of the present invention, since it is configured and operates as described above, the processing liquid is refreshed by filtering while the chemical liquid processing and the pure water processing are performed.
【0085】請求項3の発明では、薬液処理が行われる
際には、処理液は圧送ポンプで吸引されて処理液回収路
を流下することになるので、管径が同じ処理液回収路で
あっても単に落差で流下するものに比較して流下する処
理液の流量は格段に多くなるので、処理液回収路は管径
の細いもので足りる。請求項4の発明では、処理液貯溜
容器を含む処理液循環経路の一部に処理液を加熱する加
熱手段を設けたことから、例えば高温による薬液処理を
なす場合において、処理液温度の上昇を待つ必要がな
く、純水による洗浄処理から直ちに薬液処理に移行する
ことが可能になる。According to the third aspect of the present invention, when the chemical treatment is performed, the treatment liquid is sucked by the pressure feed pump and flows down the treatment liquid recovery passage. Therefore, the treatment liquid recovery passage has the same pipe diameter. However, since the flow rate of the processing liquid flowing down is much larger than that of the processing liquid flowing down simply by a drop, it is sufficient for the processing liquid recovery passage to have a small pipe diameter. In the invention of claim 4, since the heating means for heating the treatment liquid is provided in a part of the treatment liquid circulation path including the treatment liquid storage container, the temperature of the treatment liquid is increased when the chemical treatment is performed at a high temperature. There is no need to wait, and it is possible to immediately shift from the cleaning treatment with pure water to the chemical treatment.
【0086】請求項5の発明では、少なくとも1つの基
板処理槽で複数の薬液処理が可能であるから、基板処理
装置の大型化を防止することができる。また、それぞれ
の処理液の消費量も大幅に減らせる。According to the fifth aspect of the present invention, since at least one substrate processing bath can process a plurality of chemicals, it is possible to prevent the substrate processing apparatus from becoming large. In addition, the consumption of each processing liquid can be greatly reduced.
【図1】実施例1に係る浸漬処理装置の概略系統図を示
す。FIG. 1 shows a schematic system diagram of an immersion treatment apparatus according to a first embodiment.
【図2】実施例2に係る浸漬処理装置の概略系統図を示
す。FIG. 2 shows a schematic system diagram of an immersion treatment apparatus according to a second embodiment.
【図3】実施例3に係る浸漬処理装置の概略系統図を示
す。FIG. 3 shows a schematic system diagram of an immersion treatment apparatus according to a third embodiment.
【図4】図4(A)は実施例4を示す浸漬処理装置の概略
系統図であり、図4(B)は図4(A)のB部を、図4(C)
は図4(A)のC部を夫々示す液通路の要部縦断面図であ
る。FIG. 4 (A) is a schematic system diagram of an immersion treatment apparatus showing Example 4, and FIG. 4 (B) shows a portion B of FIG. 4 (A) and FIG.
FIG. 4 is a vertical cross-sectional view of a main part of a liquid passage showing a part C of FIG. 4 (A).
【図5】実施例5に係る浸漬処理装置の概略系統図を示
す。FIG. 5 shows a schematic system diagram of an immersion treatment apparatus according to a fifth embodiment.
【図6】実施例6に係る浸漬処理装置の概略系統図を示
す。FIG. 6 shows a schematic system diagram of an immersion treatment apparatus according to a sixth embodiment.
【図7】実施例7に係る浸漬処理装置の概略系統図を示
す。FIG. 7 shows a schematic system diagram of an immersion treatment apparatus according to a seventh embodiment.
【図8】実施例8に係る浸漬処理装置の概略系統図を示
す。FIG. 8 shows a schematic system diagram of an immersion treatment apparatus according to an eighth embodiment.
【図9】実施例9に係る浸漬処理装置の概略系統図を示
す。FIG. 9 shows a schematic system diagram of an immersion treatment apparatus according to a ninth embodiment.
【図10】実施例9に係る浸漬処理装置の概略系統図を
示す。FIG. 10 shows a schematic system diagram of an immersion treatment apparatus according to a ninth embodiment.
【図11】実施例10に係る浸漬処理装置の概略系統図
を示す。FIG. 11 shows a schematic system diagram of the immersion treatment apparatus according to the tenth embodiment.
【図12】実施例10に係る浸漬処理装置の概略系統図
を示す。FIG. 12 is a schematic system diagram of an immersion treatment apparatus according to Example 10.
【図13】実施例10に係る浸漬処理装置の概略系統図
を示す。FIG. 13 is a schematic system diagram of an immersion treatment apparatus according to Example 10.
【図14】実施例11に係る浸漬処理装置の概略系統図
を示す。FIG. 14 shows a schematic system diagram of an immersion treatment apparatus according to an eleventh embodiment.
【図15】実施例11に係る浸漬処理装置の概略系統図
を示す。FIG. 15 shows a schematic system diagram of an immersion treatment apparatus according to an eleventh embodiment.
【図16】本発明の浸漬処理装置を適用した基板処理装
置の概略斜視図である。FIG. 16 is a schematic perspective view of a substrate processing apparatus to which the immersion processing apparatus of the present invention is applied.
【図17】同基板処理装置の概略平面図である。FIG. 17 is a schematic plan view of the substrate processing apparatus.
【図18】同基板処理装置の概略縦断面図である。FIG. 18 is a schematic vertical sectional view of the substrate processing apparatus.
【図19】従来技術に属する基板処理装置の概略平面図
である。FIG. 19 is a schematic plan view of a substrate processing apparatus according to a conventional technique.
【図20】従来例1に係る浸漬処理装置を示し、同図
(A)は薬液処理の概略系統図、同図(B)は純水処理の概
略系統図である。FIG. 20 is a diagram showing an immersion treatment apparatus according to Conventional Example 1;
(A) is a schematic system diagram of chemical liquid treatment, and (B) is a schematic system diagram of pure water treatment.
【図21】従来例2を示す浸漬処理装置の概略説明図で
ある。FIG. 21 is a schematic explanatory view of an immersion treatment apparatus showing Conventional Example 2.
1…基板処理槽、3…純水供給路、6…処理液貯留容
器、7…処理液供給路、8…処理液導入弁、10…フィ
ルタ、15…圧送ポンプ、22…処理液回収路、27…
純水導入弁、42…排液路、43…排液ドレン、44…
処理液回収弁、47…排液弁、81…インラインヒー
タ、82…処理液選択弁、83…処理液選択戻弁、DW
…純水、QA 〜QE …処理液、W…基板。DESCRIPTION OF SYMBOLS 1 ... Substrate processing tank, 3 ... Pure water supply path, 6 ... Processing solution storage container, 7 ... Processing solution supply path, 8 ... Processing solution introduction valve, 10 ... Filter, 15 ... Pressure pump, 22 ... Processing solution recovery path, 27 ...
Pure water inlet valve, 42 ... Drainage channel, 43 ... Drainage drain, 44 ...
Treatment liquid recovery valve, 47 ... Drainage valve, 81 ... In-line heater, 82 ... Treatment liquid selection valve, 83 ... Treatment liquid selection return valve, D W
... pure water, Q A ~Q E ... processing solution, W ... substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 杉本 賢司 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番1 大日本スクリーン製造株式会社 野洲事業所内 (72)発明者 前川 直嗣 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番1 大日本スクリーン製造株式会社 野洲事業所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenji Sugimoto Inventor Kenji Sugimoto 2426-1 Kuchinogawara, Mikami, Yasu-cho, Yasu-gun, Shiga Prefecture Inside the Yasu Plant of Dainippon Screen Mfg. Co., Ltd. (72) Naoji Maekawa Yasu-gun, Shiga Prefecture 2426-1 Kuchinogawara, Misu, Yasu-machi, Daiji Screen Manufacturing Co., Ltd., Yasu Plant
Claims (5)
理をなすオーバーフロー型の基板処理槽と、上記基板処
理槽に連結した処理液供給路と、上記処理液供給路に処
理液導入弁及び圧送ポンプを順に介して連通した処理液
貯留容器と、上記処理液供給路に純水導入弁を介して連
通した純水供給路と、上記基板処理槽よりオーバーフロ
ーした排液を排液ドレンに導出する排液路とを具備して
成る基板の浸漬処理装置において、 上記排液路を分岐して一方は排液弁を介して排液ドレン
に連通するとともに、他方は処理液回収路として処理液
回収弁を介して上記処理液貯留容器に連通し、薬液処理
に際してオーバーフローした処理液を回収して上記基板
処理槽に還流させることを特徴とする基板の浸漬処理装
置。1. An overflow type substrate processing bath for immersing a substrate in a processing liquid for surface treatment of the substrate, a processing liquid supply passage connected to the substrate processing bath, and a processing liquid introduction into the processing liquid supply passage. A treatment liquid storage container that communicates with each other through a valve and a pressure pump, a pure water supply passage that communicates with the treatment liquid supply passage through a pure water introduction valve, and a drainage that drains the overflowed liquid from the substrate treatment tank. In a substrate immersion treatment apparatus comprising a drainage path leading to a drainage path, one of the drainage paths is branched and one is connected to a drainage drain through a drainage valve, and the other is used as a treatment solution recovery path. An immersion treatment apparatus for a substrate, which communicates with the treatment liquid storage container through a treatment liquid recovery valve, collects the treatment liquid overflowed during the chemical treatment, and returns the treatment liquid to the substrate treatment tank.
弁との間にフィルタを付設するとともに、処理液導入弁
よりも下流側に純水供給路を連通し、 処理液供給路の圧送ポンプと純水供給路接続部との間に
処理液回収路を接続し、純水処理に際して圧送ポンプで
汲み上げた処理液を処理液回収路に流通させて上記処理
液貯留容器に還流させる請求項1に記載の基板の浸漬処
理装置。2. A pump is provided between the pressure feed pump of the treatment liquid supply passage and the treatment liquid introduction valve, and a pure water supply passage is connected to the downstream side of the treatment liquid introduction valve so that the treatment liquid supply passage is pressure fed. A treatment liquid recovery passage is connected between the pump and the pure water supply passage connecting portion, and the treatment liquid pumped up by a pressure pump during the treatment of pure water is circulated in the treatment liquid recovery passage to be returned to the treatment liquid storage container. 1. The substrate immersion treatment apparatus according to 1.
理液回収路とを接続し、薬液処理に際して処理液を処理
液回収路から処理液供給路に流通させて上記基板処理槽
に還流させる請求項2に記載の基板の浸漬処理装置。3. A processing liquid supply path is connected to an upstream side of a pressure-feeding pump and a processing liquid recovery path so that the processing liquid is circulated from the processing liquid recovery path to the processing liquid supply path and returned to the substrate processing bath during chemical liquid processing. The substrate immersion treatment apparatus according to claim 2.
留容器を含む処理液循環経路の一部に処理液を加熱する
加熱手段を設けて構成した請求項2又は請求項3に記載
の基板の浸漬処理装置。4. The substrate according to claim 2 or 3, wherein a heating means for heating the processing liquid is provided in a part of the processing liquid circulation path including the processing liquid storage container, which is formed during the pure water processing. Immersion treatment equipment.
数の処理液貯留容器を切り換え可能に接続し、処理液回
収路に処理液戻選択弁を介して上記複数の処理液貯留容
器を切り換え可能に接続して構成した請求項1乃至請求
項4のいずれかに記載の基板の浸漬処理装置。5. A plurality of processing liquid storage containers are switchably connected to a processing liquid supply passage via a processing liquid selection valve, and the plurality of processing liquid storage containers are connected to a processing liquid recovery passage via a processing liquid return selection valve. 5. The substrate immersion treatment apparatus according to claim 1, wherein the substrate immersion treatment apparatus is configured to be switchably connected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06145939A JP3138901B2 (en) | 1993-08-06 | 1994-06-28 | Substrate immersion processing equipment |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5-215129 | 1993-08-06 | ||
JP21512993 | 1993-08-06 | ||
JP06145939A JP3138901B2 (en) | 1993-08-06 | 1994-06-28 | Substrate immersion processing equipment |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23372399A Division JP3530426B2 (en) | 1993-08-06 | 1999-08-20 | Substrate immersion processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0799177A true JPH0799177A (en) | 1995-04-11 |
JP3138901B2 JP3138901B2 (en) | 2001-02-26 |
Family
ID=26476917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP06145939A Expired - Lifetime JP3138901B2 (en) | 1993-08-06 | 1994-06-28 | Substrate immersion processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3138901B2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0969509A (en) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | Cleaning/etching/drying system for semiconductor wafer and using method thereof |
JP2002198348A (en) * | 2000-12-25 | 2002-07-12 | Tokyo Electron Ltd | Solution processing apparatus |
JP2003297795A (en) * | 2002-02-28 | 2003-10-17 | A-Tech Ltd | Cleaner and dryer, and cleaning and drying method of semiconductor wafer |
JP2007283166A (en) * | 2006-04-13 | 2007-11-01 | Rinnai Seiki Kk | Washing apparatus |
JP2009135519A (en) * | 2009-02-23 | 2009-06-18 | Seiko Epson Corp | Semiconductor manufacturing system, control device, method for controlling semiconductor manufacturing system, and treated liquid recovery method |
WO2014133128A1 (en) * | 2013-03-01 | 2014-09-04 | ライオンハイジーン株式会社 | Cleaning apparatus and dolly cleaning device |
JP5597314B1 (en) * | 2014-03-12 | 2014-10-01 | ヤマテック株式会社 | Processing equipment |
CN109300800A (en) * | 2017-07-24 | 2019-02-01 | 长鑫存储技术有限公司 | Substrate processing apparatus and substrate processing method |
JP2019220518A (en) * | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | Substrate processing apparatus and processing solution reuse method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5994687B2 (en) * | 2013-03-12 | 2016-09-21 | 信越半導体株式会社 | Cleaning tank treatment method |
-
1994
- 1994-06-28 JP JP06145939A patent/JP3138901B2/en not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0969509A (en) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | Cleaning/etching/drying system for semiconductor wafer and using method thereof |
JP2002198348A (en) * | 2000-12-25 | 2002-07-12 | Tokyo Electron Ltd | Solution processing apparatus |
JP2003297795A (en) * | 2002-02-28 | 2003-10-17 | A-Tech Ltd | Cleaner and dryer, and cleaning and drying method of semiconductor wafer |
JP2007283166A (en) * | 2006-04-13 | 2007-11-01 | Rinnai Seiki Kk | Washing apparatus |
JP4492813B2 (en) * | 2006-04-13 | 2010-06-30 | リンナイ精機株式会社 | Cleaning device |
JP2009135519A (en) * | 2009-02-23 | 2009-06-18 | Seiko Epson Corp | Semiconductor manufacturing system, control device, method for controlling semiconductor manufacturing system, and treated liquid recovery method |
WO2014133128A1 (en) * | 2013-03-01 | 2014-09-04 | ライオンハイジーン株式会社 | Cleaning apparatus and dolly cleaning device |
JP2014193453A (en) * | 2013-03-01 | 2014-10-09 | Lion Hygiene Kk | Washing apparatus and dolly washing apparatus |
CN105008056A (en) * | 2013-03-01 | 2015-10-28 | 狮王卫生综合服务株式会社 | Cleaning apparatus and dolly cleaning device |
JP5597314B1 (en) * | 2014-03-12 | 2014-10-01 | ヤマテック株式会社 | Processing equipment |
JP2015171694A (en) * | 2014-03-12 | 2015-10-01 | ヤマテック株式会社 | Processing device |
CN109300800A (en) * | 2017-07-24 | 2019-02-01 | 长鑫存储技术有限公司 | Substrate processing apparatus and substrate processing method |
JP2019220518A (en) * | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | Substrate processing apparatus and processing solution reuse method |
Also Published As
Publication number | Publication date |
---|---|
JP3138901B2 (en) | 2001-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI690979B (en) | Substrate processing device and cleaning method of substrate processing device | |
US6641675B2 (en) | Method and apparatus for immersion treatment of semiconductor and other devices | |
TWI503910B (en) | Substrate treatment apparatus and substrate treatment method | |
US6146468A (en) | Semiconductor wafer treatment | |
JPH0799177A (en) | Immersion treatment apparatus for substrate | |
JP2739419B2 (en) | Substrate processing equipment | |
JP4884999B2 (en) | Substrate processing equipment | |
JP3254520B2 (en) | Cleaning treatment method and cleaning treatment system | |
JP3530426B2 (en) | Substrate immersion processing equipment | |
JP3243708B2 (en) | Processing method and processing apparatus | |
JP3254518B2 (en) | Cleaning treatment method and cleaning treatment system | |
JP2000183024A (en) | Substrate-processing apparatus | |
JP2003142448A (en) | Operating method of substrate-washing apparatus | |
JP3254519B2 (en) | Cleaning treatment method and cleaning treatment system | |
JPH10321577A (en) | Cleaning apparatus for semiconductor substrate | |
KR100873939B1 (en) | Substrate cleaning unit and method for treating exhaust of the substrate cleaning unit, and apparatus for treating substrate with the controll unit | |
JP2920584B2 (en) | Substrate cleaning device | |
JP3701811B2 (en) | Substrate processing method and substrate processing apparatus | |
JP3517134B2 (en) | Substrate processing equipment | |
JP3035451B2 (en) | Substrate surface treatment equipment | |
JPH08195374A (en) | Cleaning device and its method | |
JPH11283947A (en) | Substrate processing device and method | |
JPH05217988A (en) | Washing device | |
JPH10163158A (en) | Cleaning apparatus for sheetlike body | |
JPH0480924A (en) | Cleaning device and method of semiconductor wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071215 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081215 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20081215 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091215 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091215 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20091215 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101215 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101215 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111215 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20111215 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20121215 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20121215 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121215 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131215 Year of fee payment: 13 |
|
EXPY | Cancellation because of completion of term |