KR100873939B1 - Substrate cleaning unit and method for treating exhaust of the substrate cleaning unit, and apparatus for treating substrate with the controll unit - Google Patents

Abstract

The substrate cleaning unit and the exhaust-processing method of the substrate cleaning unit the apparatus processing apparatus are provided to improve the efficiency of the substrate processing process. The substrate cleaning unit comprises the transport unit(100), the first cleaning part(200), the second cleaning unit(300), the controller(400). The transport unit has the robot arm transferring the substrate. The first cleaning part is arranged in one side of the transport unit, and has a plurality of the process baths. The second cleaning unit is arranged in the other side of the transport unit, and has a plurality of the process baths. The controller controls the transport unit, and the exhaust process of the second cleaning unit and the first cleaning part. The controller controls independently the transport unit, and the external air influx quantity to the first cleaning part and the second cleaning unit.

Description

SUBSTRATE CLEANING UNIT AND METHOD FOR TREATING EXHAUST OF THE SUBSTRATE CLEANING UNIT, AND APPARATUS FOR TREATING SUBSTRATE WITH THE CONTROLL UNIT}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate cleaning unit and a substrate processing apparatus having the same, and more particularly, a unit for cleaning a substrate using a processing liquid, and an apparatus for treating a substrate with the unit. It is about.

Among the apparatuses for processing semiconductor substrates, a wet station is an apparatus for cleaning a wafer using various kinds of processing liquids. A general wet station includes a cassette processing unit and a wafer cleaning unit. The cassette processing unit processes a cassette for accommodating a plurality of wafers. As a cassette processing unit, a so-called stocker apparatus is used. The wafer cleaning unit has a plurality of treating baths. Each processing tank has a space in which the processing liquid is filled, and the wafers are immersed in the processing liquid filled in the process and cleaned.

In the substrate processing apparatus described above, a phenomenon in which process efficiency is lowered due to foreign substances in the apparatus such as fumes and particles generated from a processing tank is generated. That is, fumes and other particles in the apparatus generated from the treatment liquids in the treatment tank may cause malfunctions of components for performing the process in the apparatus. In addition, the fumes and foreign substances in the apparatus generated from the treatment liquids in the treatment tank affect the internal processing environment of the apparatus, thereby reducing the cleaning efficiency of the wafer. Therefore, the exhaust treatment of the apparatus for preventing the degradation of the process efficiency by such a fume and other foreign matter is required.

In addition, the substrate processing apparatus described above has a low efficiency of separating and exhausting the alkaline fume and the acidic fume. In other words, when the alkaline fume and the acidic fume come into contact with the inside of the device, the components in the device are corroded and contaminated to reduce the process efficiency. Therefore, when one apparatus is provided with treatment tanks using an alkaline treatment liquid and treatment tanks using an acidic treatment liquid, the alkaline fume and the acidic fume generated from the respective treatment tanks are separated and exhausted. shall. However, the general substrate processing apparatus has low efficiency of separating and exhausting alkaline fume and acidic fume.

The problem to be solved by the present invention is to provide a substrate cleaning unit for effectively performing the exhaust treatment of the apparatus, an exhaust treatment method of the substrate cleaning unit, and a substrate processing apparatus having the same.

An object of the present invention is to provide a substrate cleaning unit which prevents contamination of equipment by fumes generated during a substrate cleaning process, an exhaust treatment method of the substrate cleaning unit, and a substrate processing apparatus having the same.

In accordance with another aspect of the present invention, a substrate cleaning unit includes a transfer part having a robot arm for transferring a substrate and a plurality of processing tanks disposed on one side of the transfer part and having a space in which a processing liquid is filled. A second cleaning part having a plurality of processing tanks disposed at the other side of the cleaning part, and having a space filled with the processing liquid therein, and exhausting the transfer part, the first cleaning part, and the second cleaning part; It includes a control unit for controlling, wherein the control unit independently controls the flow rate of the outside air to the transfer unit, the first cleaning unit, and the second cleaning unit.

According to an embodiment of the present invention, the substrate cleaning unit may include a first inflow fan rotatably installed on an upper wall of the transfer part, a second inflow fan rotatably installed on an upper wall of the first cleaning part, and the And a third inflow fan rotatably installed on an upper wall of the second cleaning unit, wherein the controller independently controls the inflow of external air of each of the first inflow fan, the second inflow fan, and the third inflow fan. To control.

According to an exemplary embodiment of the present invention, when the substrate cleaning of the first cleaning unit is performed, the control unit may have an external air inflow to the first cleaning unit greater than an external air inflow to the transfer unit and the second cleaning unit. The first inflow fan, the second inflow fan, and the third inflow are controlled, and when the substrate cleaning of the second cleaning part is performed, the amount of external air flowing into the second cleaning part is increased. The first inflow fan, the second inflow fan, and the third inflow are controlled to be greater than the amount of external air inflow to the first cleaning unit.

According to an embodiment of the present invention, the treatment tank provided in the first cleaning unit cleans the substrate using an acidic solution, and the treatment tank provided in the second cleaning unit cleans the substrate using an alkaline solution.

The substrate processing apparatus according to the present invention for solving the above problems has a substrate cleaning unit having a space for storing the processing liquid therein and having a processing tank for cleaning by immersing the wafer in the processing liquid stored in the process, and the stocker unit and And a wafer transfer unit configured to transfer wafers between the substrate cleaning units, wherein the substrate cleaning unit includes a transfer unit having a robot arm for transferring a substrate and a space disposed at one side of the transfer unit and filled with a processing liquid therein. A first cleaning unit having processing tanks of the first cleaning unit, a second cleaning unit having a plurality of processing tanks disposed on the other side of the transfer unit, and having a space in which the processing liquid is filled, and the transfer unit and the first cleaning unit, and And a control unit for controlling the exhaust treatment of the second cleaning unit, wherein the substrate cleaning unit has an upper wall of the transfer unit. A first inflow fan rotatably installed, a second inflow fan rotatably installed on an upper wall of the first cleaning unit, and a third inflow fan rotatably installed on an upper wall of the second cleaning unit; The control unit independently controls the external air inflow amount of each of the first inflow fan, the second inflow fan, and the third inflow fan.

According to an exemplary embodiment of the present invention, when the substrate cleaning of the first cleaning unit is performed, the control unit may have an external air inflow to the first cleaning unit greater than an external air inflow to the transfer unit and the second cleaning unit. The first inflow fan, the second inflow fan, and the third inflow are controlled, and when the substrate cleaning of the second cleaning part is performed, the amount of external air flowing into the second cleaning part is increased. The first inflow fan, the second inflow fan, and the third inflow are controlled to be greater than the amount of external air inflow to the first cleaning unit.

According to an embodiment of the present invention, the treatment tank provided in the first cleaning unit cleans the substrate using an acidic solution, and the treatment tank provided in the second cleaning unit cleans the substrate using an alkaline solution.

Exhaust treatment method of a substrate cleaning unit according to the present invention for solving the above problems is a first having a transfer part having a robot arm, a treatment tank provided on one side of the transfer portion and storing a processing liquid therein to clean the substrate An exhaust treatment method of a substrate cleaning unit having a cleaning unit and a second cleaning unit provided on the other side of the transfer unit and storing a processing liquid therein to clean the substrate, the exhaust processing method of the substrate cleaning unit being exhausted. Is independently performed to exhaust the transfer unit, the first cleaning unit, and the second cleaning unit, and the exhaust of the substrate cleaning unit is performed when the substrate cleaning of the first cleaning unit is performed. The exhaust pressure of the conveying part and the second cleaning part is increased so that the exhaust pressure in the conveying part and the second cleaning part is higher than the exhaust pressure, When the plate cleaning is in progress, the exhaust pressure in the conveying part and the first cleaning part is increased so that the exhaust pressures in the conveying part and the first cleaning part are higher than the exhaust pressure of the second cleaning part.

According to an embodiment of the present invention, the increase in the exhaust pressure in the conveying part and the first cleaning part is such that the amount of external air flowing into the conveying part and the first cleaning part is greater than the amount of external air flowing into the second cleaning part. The exhaust pressure in the conveying part and the second cleaning part is increased so that the amount of external air flowing into the conveying part and the second cleaning part is greater than the amount of external air flowing into the first cleaning part.

According to an embodiment of the present invention, the exhaust of the substrate cleaning unit is controlled such that the exhaust pressure in the transfer part and the second cleaning part is the same when the substrate cleaning of the first cleaning part proceeds, and the second cleaning part When the cleaning of the substrate is in progress, the exhaust pressure in the transfer section and the first cleaning section is adjusted to be the same.

The present invention effectively performs the exhaust treatment in the apparatus during the process to improve the efficiency of the substrate treatment process.

The present invention improves the efficiency of the substrate processing process by effectively separating and exhausting the alkaline fume and the acidic fume.

The present invention improves the efficiency of the substrate processing process by preventing the fume generated from one cleaning unit from flowing into the other cleaning unit.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the present invention to those skilled in the art will fully convey. Portions denoted by like reference numerals denote like elements throughout the specification.

In addition, although the embodiment according to the present invention has been described using a wet station, which is an apparatus for cleaning a semiconductor wafer, as an example, the present invention may be applicable to any apparatus for processing various kinds of substrates.

(Example)

1 is a plan view of a substrate processing apparatus according to the present invention, and FIG. 2 is a view showing a cut shape along the line AA ′ of FIG. 1.

Referring to FIG. 1, an apparatus for treating substrate 1 according to the present invention according to the present invention performs a process of processing a semiconductor substrate (hereinafter, referred to as a “wafer”). The substrate processing apparatus 1 includes a cassette treating unit, a first wafer transfering unit 30, a wafer cleaning unit 40, and a second wafer transfer unit ( second wafer transfering unit) 50.

The cassette processing unit (hereinafter referred to as a "stocker unit") processes the member (hereinafter referred to as "cassette") C for accommodating a plurality of wafers. The stocker unit includes a cassette storage unit 10 and a cassette transfer unit 20. The cassette accommodating part 10 receives the plurality of cassettes C and stores them. The cassette housing section 10 has an import section 12 for carrying the cassettes C into the cassette storage section 10 and a carrying section 14 for carrying out the cassettes C from the cassette storage section 10. . The cassette accommodating part 10 arranges and holds the cassettes C in up, down, left and right directions.

The cassette transfer unit 20 transfers the cassettes C stored in the cassette storage unit 10 to the first wafer transfer unit 30. The cassette transfer section 20 has at least one transfer arm 22. The transfer arm 22 moves the cassettes C placed on the plate 16 of the cassette accommodating part 10 so that the robot arms 32 and 34 of the first wafer transfer unit 30 to be described later are cassettes C. ) To position to process the wafers W). The transfer arm 22 is moved along a guide rail 24. Accordingly, the transfer arm 22 is linearly reciprocated along the guide rails 24, thereby holding or releasing the cassettes C required by the process among the cassettes C placed on the cassette housing 10. It is moved to the position to release.

The wafer transfer unit 30 transfers the wafers W between the cassette processing unit and the wafer cleaning unit 40. The first wafer transfer unit 30 has a first robot arm 32 and a second robot arm 34. The first robot arm 32 transfers the wafer W from the cassette C accommodated in the cassette accommodating part 10 to the wafer cleaning unit 40, and the second robot arm 34 is the wafer cleaning unit 40. ), The cleaning process is completed, and the wafer W is transferred to the cassette accommodating portion 10.

The wafer cleaning unit 40 performs a process of cleaning the wafer (W). In one embodiment, the wafer cleaning unit 40 may include a transfer member 100, a first cleaning member 200, a second cleaning member 300, and a controller ( control member) (400 in FIG. 2). The first and second cleaning parts 200 and 300 are disposed at both sides of the transfer part 100. That is, the first cleaning unit 200 is disposed on one side of the transfer unit 100, and the second cleaning unit 200 is disposed on the other side of the transfer unit 100. The first cleaning unit 200 and the second cleaning unit 300 are disposed substantially parallel along the longitudinal direction of the apparatus 1. The transfer unit 100 transfers the wafer W between the first cleaning unit 200 and the second cleaning unit 300 to the first cleaning unit 200 and the second cleaning unit 300.

Referring to FIG. 2, the transfer unit 100 may include a first robot arm 110, a second robot arm 120, a first infow member 130, And a first outflow member 140. The first robot arm 110 transfers the wafer W to the first cleaning unit 200. The first robot arm 110 includes a first transfer arm 112 and a guide rail 114. The first transfer arm 112 is moved along the guide rail 114 to immerse the wafers W in the treatment tanks 210 of the first cleaning unit 200 to be described later. The first inflow member 130 introduces external air into the transport unit 100 through the upper wall of the transport unit 100. The first inflow member 130 has at least one inflow fan 132 rotatably installed on the upper wall of the transfer part 100. The first outlet member 140 discharges the air in the transfer unit 100 from the transfer unit 100 through the lower wall of the transfer unit 100. The first outlet member 140 includes at least one outflow fan 142 rotatably installed under the transfer unit 100.

The first cleaning unit 200 performs a process of cleaning the wafer (W). In one embodiment, the first cleaning unit 200 comprises four treating baths 210 and a second inflow member 220 arranged in a line along the longitudinal direction of the apparatus 1. And a second outlet member (not shown). Each treatment tank 210 has a space in which a treatment liquid is filled. The treatment liquid is a chemical liquid for removing foreign matter adhering to the wafer W surface. The second inflow member 220 introduces external air into the first cleaning unit 200. The second inflow member 220 has at least one inflow fan 222 rotatably installed on the upper wall of the first cleaning part 200. In addition, the second outlet member allows air in the first cleaning unit 200 to flow out of the first cleaning unit 200. The second outlet member may be an exhaust line provided at a lower portion of the first cleaner 200 so that air in the first cleaner 200 is discharged through the lower wall of the first cleaner 200. have. Alternatively, the second outlet member may include at least one fan installed on the lower wall of the first cleaning unit 200.

The second cleaning unit 300 performs a process of cleaning the wafer (W). In one embodiment, the second cleaning unit 300 includes four treating baths 310 and a third inflow member 320 arranged in a line along the longitudinal direction of the apparatus 1. And a third outlet member (not shown). Each treatment tank 310 has a space in which the treatment liquid is filled. The treatment liquid is a chemical liquid for removing foreign matter adhering to the wafer W surface. The third inflow member 320 introduces external air into the second cleaning unit 300. The third inflow member 320 has at least one inflow fan 322 rotatably installed on the upper wall of the second cleaning unit 300. In addition, the third outlet member allows air in the second cleaning unit 300 to flow out of the second cleaning unit 300. The third outlet member may be an exhaust line provided at a lower portion of the second cleaner 300 so that air in the second cleaner 300 is discharged through the lower wall of the second cleaner 300. Alternatively, at least one fan installed below the second cleaning unit 300 may be used as the third outlet member.

Here, the first cleaning unit 200 and the second cleaning unit 300 performs a wafer (W) cleaning process with a different type of chemical liquid. For example, the treatment liquids filled in the treatment tanks 210 of the first cleaning unit 200 are acidic chemical liquids, and the treatment liquids filled in the treatment tanks 310 of the second cleaning unit 300 are It may be alkaline chemicals. In this case, the acidic fume generated from the first washing unit 200 and the alkaline fume generated from the second washing unit 300 are treated to be exhausted independently of each other. That is, acidic fumes generated from the first cleaning unit 200 flow into the second cleaning unit 300, or alkaline fumes generated from the second cleaning unit 300 flow into the first cleaning unit 200. When the acidic fume and the alkaline fume react, the components of the wafer cleaning unit 40 are corroded and the processing environment in the wafer cleaning unit 40 is affected to reduce the wafer W cleaning efficiency. Therefore, each of the first cleaning unit 200 and the second cleaning unit 300 is controlled so that the mutual exhaust environment is not affected by each other.

The controller 400 controls the exhaust treatment of the wafer cleaning unit 40. That is, the controller 400 may include the first inflow member 130 and the first outflow member 140, the second inflow member 220 and the second outflow member of the first cleaning part 200. Shown), and the third inflow member 320 and the third outflow member (not shown) of the second cleaning part 300 to control the transfer part 100, the first cleaning part 200, and the second cleaning part 300. The exhaust treatment of the cleaning unit 300 is controlled. A detailed process of controlling the exhaust treatment of the wafer cleaning unit 40 by the controller 400 will be described later.

The second wafer transfer unit 50 transfers the wafer W from the first cleaning unit 200 to the second cleaning unit 300. The second wafer transfer unit 50 includes a third robot arm 52 and a guide rail 54. The third robot arm 52 is moved along the guide rail 54. The third robot arm 52 is linearly reciprocated along the guide rails 54 during the process, and receives the wafers W that have been cleaned by the first cleaning unit 200 and transfers them to the second cleaning unit 300. do.

Hereinafter, the process of the substrate processing apparatus 1 according to the present invention will be described in detail. Figure 3 is a flow chart showing a substrate processing method according to the present invention, the fourth is a flow chart showing a method of exhaust processing of the wafer cleaning unit according to the present invention. 5A to 5D are views for explaining an exhaust treatment process of the control unit according to the present invention.

Referring to FIG. 3, when the process of the substrate processing apparatus 1 is started, the cassettes C are loaded into the stocker unit (S110). That is, the cassette C containing the wafers W to be cleaned may be loaded into the cassette storage unit 10 through the carry-in unit 12 of the cassette storage unit 10. The cassette C carried into the carrying-in part 12 is accommodated vertically, left, right, and right in a predetermined position of the cassette accommodating part 10 by the transfer arm 22 of the cassette carrying part 20.

The first wafer transfer unit 30 carries out the wafer W in the cassette C transferred from the transfer arm 22 of the cassette transfer unit 20 and transfers the wafer W to the wafer cleaning unit 40 (S120). That is, the first robot arm 32 sequentially ejects the wafers W in the cassette C transferred from the transfer arm 22 and transfers them to the wafer cleaning unit 40.

The wafer cleaning unit 40 cleans the transferred wafers W (S130). That is, the first robot arm 110 of the transfer unit 100 immerses the wafer W in the respective treatment tanks 210 of the first cleaning unit 200, thereby removing foreign substances on the surface of the wafer W. . In addition, the second robot arm 120 of the transfer unit 100 removes foreign substances on the surface of the wafer W by immersing the wafer W in the respective treatment tanks 310 of the second cleaning unit 300. . In the process in which the above-described cleaning process is performed, the control unit 400 has a fume generated from the first cleaning unit 200 flowing into the second cleaning unit 300 or generated from the second cleaning unit 300. The exhaust treatment of the wafer cleaning unit 40 is controlled to prevent the fume from flowing into the first cleaning unit 200. A detailed description of the wafer cleaning unit 40 exhaust treatment will be given later.

After the cleaning process is completed, the wafers W are transferred to the cassette C in the cassette processing unit (S140). In other words, the wafers W having been cleaned by the wafer cleaning unit 40 have a cassette C positioned in the cassette transfer unit 20 by the second robot arm 34 of the first wafer transfer unit 30. Imported into (S140). Then, the cassette C containing the wafers W having the cleaning process completed is taken out from the apparatus 1 through the carrying out portion 14 of the stocker unit and then transferred to a facility in which a subsequent process is performed (S150).

In the process of performing the above-described wafer cleaning process, the exhaust treatment process of the wafer cleaning unit 40 of the controller 400 proceeds as follows. Referring to FIG. 4, before the wafer cleaning of the wafer cleaning unit 40 is started, the controller 400 controls the exhaust pressure of the internal space of the wafer cleaning unit 40 to be the same. That is, referring to FIG. 5A, the controller 400 includes the first to third inflow members 130, 220, and 320, the first outflow member 140, and the second and third outflow members (not shown). The exhaust pressure P1 in the transfer part 100, the exhaust pressure P2 in the first cleaning part 200, and the exhaust pressure P3 in the second cleaning part 300 are controlled to be the same.

If the wafer cleaning process of the first cleaning unit 200 is started (S131), the control unit 400 determines that the exhaust pressures P1 and P3 of the transfer unit 100 and the second cleaning unit 300 are the first cleaning unit. It is controlled to be larger than the exhaust pressure of (200) (P2) (S132). That is, referring to FIG. 5B, when the wafer cleaning process of the first cleaning unit 200 is started, the first robot arm 110 sequentially immerses the wafers W in the processing tanks 210 to form a wafer ( W) Remove foreign substances remaining on the surface. In addition, the controller 400 increases the external air inflow amount of the first inflow member 130 and the third inflow member 320, and exhaust pressures P1 and P3 in the transfer part 100 and the second cleaning part 300. To increase. Therefore, the exhaust pressures P1 and P3 in the transfer part 100 and the second cleaning part 300 are adjusted higher than the exhaust pressure P2 in the first cleaning part 200. Therefore, the fume generated from the treatment tanks 210 of the first cleaning unit 200 is prevented from flowing into the second cleaning unit 300. In this case, the exhaust pressure P1 of the transfer part 100 and the exhaust pressure P3 of the second cleaning part 300 are preferably adjusted to be the same. If the exhaust pressure P1 of the transfer part 100 and the exhaust pressure P3 of the second cleaning part 300 are different from each other, the fume generated from the first cleaning part 200 flows into the transfer part 100. Afterwards, the fume generated from the second cleaning unit 300 or the second cleaning unit 300 may flow into the transfer unit 100 and then move to the first cleaning unit 200.

If the wafer cleaning process of the second cleaning unit 300 is started (S133), the control unit 400 determines that the exhaust pressures P1 and P2 of the transfer unit 100 and the first cleaning unit 200 are the second cleaning unit. It is controlled to be larger than the exhaust pressure P3 of 300 (S134). That is, as shown in FIG. 5C, the controller 400 increases the external air inflow amount of the first inflow member 130 and the second inflow member 220, thereby transferring the transfer part 100 and the first cleaning part 200. The exhaust pressures P1 and P2 are increased. Therefore, the exhaust pressures P1 and P2 in the transfer part 100 and the first cleaning part 200 are adjusted higher than the exhaust pressure P3 in the second cleaning part 300. Therefore, the fume generated from the treatment tanks 310 of the second cleaning unit 300 is prevented from flowing into the first cleaning unit 200. At this time, it is preferable that the exhaust pressures P1 and P2 in the transfer unit 100 and the first cleaning unit 200 are adjusted to be the same.

If the wafer cleaning process of the first cleaning unit 200 and the second cleaning unit 300 is started at the same time (S135), the control unit 400 determines that the exhaust pressure P1 of the transfer unit 100 is the first and second. Control to be larger than the exhaust pressure (P2, P3) of the cleaning unit (200, 300) (S136). That is, as shown in FIG. 5D, the controller 400 increases the external air inflow amount of the first inflow member 130, thereby increasing the exhaust pressure P1 of the transfer part 100. Therefore, the exhaust pressure P1 in the transfer part 100 is adjusted to be higher than the exhaust pressures P2 and P3 in the first and second cleaning parts 200 and 300. Therefore, the fume generated from the treatment tanks 210 of the first cleaning unit 200 is prevented from moving to the second cleaning unit 300, and the treatment tank 310 of the second cleaning unit 300 is prevented. The fumes generated from the cavities are prevented from being transferred to the second cleaning unit 200.

As described above, the present invention independently controls the exhaust treatment in the wafer cleaning unit 40 at each time during the process, thereby preventing the fume generated from one cleaning unit from flowing into the other cleaning unit. That is, the present invention independently controls the exhaust treatment of the transfer unit 100, the first cleaning unit 200, and the second cleaning unit 300, the first cleaning unit 200 or the second cleaning unit 300 The fumes generated from each other are prevented from entering the other cleaning part, thereby improving the efficiency of the wafer processing process. In particular, when one washing portion uses an alkaline treatment liquid and the other washing portion uses an acidic treatment liquid, by preventing the fumes generated from each washing portion from flowing into the other washing portion, Alkaline and acid fumes are mixed to prevent contamination of components in the installation.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

1 is a plan view of a substrate processing apparatus according to the present invention.

FIG. 2 is a view showing a cut shape along the line AA ′ shown in FIG. 1.

3 is a flowchart showing a substrate processing method according to the present invention.

4 is a flowchart showing an exhaust treatment method of a wafer cleaning unit according to the present invention.

5a to 5d are views for explaining the exhaust treatment process of the control unit according to the present invention.

* Description of symbols on the main parts of the drawings *

1: substrate processing apparatus

10: cassette compartment

20: cassette transfer unit

30: first wafer transfer unit

40: wafer cleaning unit

50: second wafer transfer unit

100: transfer unit

200: first cleaning unit

300: second cleaning unit

400: control unit

Claims (10)

In the unit for cleaning the substrate, A transfer part having a robot arm for transferring a substrate, A first cleaning unit disposed at one side of the transfer unit and having a plurality of processing tanks having a space in which a processing liquid is filled; A second cleaning unit disposed on the other side of the transfer unit and having a plurality of processing tanks having a space in which a processing liquid is filled; and A control unit for controlling the exhaust treatment of the transfer unit, the first cleaning unit, and the second cleaning unit, The control unit, The substrate cleaning unit, characterized in that for controlling the flow rate of the outside air to the transfer unit, the first cleaning unit, and the second cleaning unit independently. The method of claim 1, The substrate cleaning unit, A first inflow fan rotatably installed on an upper wall of the transfer part, a second inflow fan rotatably installed on an upper wall of the first cleaning part, and rotatably installed on an upper wall of the second cleaning part Further comprising a third inflow fan, The control unit, Substrate cleaning unit, characterized in that for controlling the external air inflow amount of each of the first inlet fan, the second inlet fan, and the third inlet fan. The method of claim 2, The control unit, When the substrate cleaning of the first cleaning unit is performed, the first inlet fan, the second inlet fan, and the exhaust pressure of the first cleaning unit are lower than the exhaust pressure of the transfer unit and the second cleaning unit. To control the third inlet fan, When the substrate cleaning of the second cleaning unit is performed, the first inlet fan, the second inlet fan, and the inner pressure of the second cleaning unit are lower than the exhaust pressure of the transfer unit and the first cleaning unit. A substrate cleaning unit, characterized in that for controlling the third inlet fan. The method according to any one of claims 1 to 3, The treatment tank provided in the said 1st washing part, The substrate is cleaned using an acidic solution, The treatment tank provided in the said 2nd washing part, A substrate cleaning unit, wherein the substrate is cleaned using an alkaline solution. In the apparatus for processing a substrate, A cassette processing unit arranged to load and unload a cassette containing a plurality of wafers; A substrate cleaning unit having a space for storing a processing liquid therein, and having a processing tank for immersing and cleaning the wafer in the processing liquid stored in the process; It includes a wafer transfer unit for transferring a wafer between the cassette processing unit and the substrate cleaning unit, The substrate cleaning unit, A transfer part having a robot arm for transferring a substrate, A first cleaning unit disposed on one side of the transfer unit and having a plurality of processing tanks having a space in which a processing liquid is filled; A second cleaning unit disposed on the other side of the transfer unit and having a plurality of processing tanks having a space in which a processing liquid is filled; and A control unit for controlling the exhaust treatment of the transfer unit, the first cleaning unit, and the second cleaning unit, The substrate cleaning unit, A first inflow fan rotatably installed on an upper wall of the transfer part, a second inflow fan rotatably installed on an upper wall of the first cleaning part, and rotatably installed on an upper wall of the second cleaning part Further comprising a third inflow fan, The control unit, And independently controlling external air inflows of the first inflow fan, the second inflow fan, and the third inflow fan. The method of claim 5, wherein The control unit, When the substrate cleaning of the first cleaning unit is performed, the first inlet fan, the second inlet fan, and the exhaust pressure of the first cleaning unit are lower than the exhaust pressure of the transfer unit and the second cleaning unit. To control the third inlet fan, When the substrate cleaning of the second cleaning unit is performed, the first inlet fan, the second inlet fan, and the exhaust pressure of the second cleaning unit are lower than the exhaust pressure of the transfer unit and the first cleaning unit. And a third inlet fan. The method according to claim 5 or 6, The treatment tank provided in the said 1st washing part, The substrate is cleaned using an acidic solution, The treatment tank provided in the said 2nd washing part, The substrate processing apparatus characterized by washing a board | substrate using alkaline solution. A first cleaning unit for cleaning a substrate having a transfer unit having a robot arm, provided on one side of the transfer unit and storing a processing liquid therein, and a process provided on the other side of the transfer unit and storing the processing liquid therein In the exhaust treatment method of the substrate cleaning unit which has a 2nd cleaning part which comprises a tank and wash | cleans a board | substrate, The exhaust of the substrate cleaning unit, The evacuation of the transfer unit, the first cleaning unit, and the second cleaning unit independently, The exhaust of the substrate cleaning unit, When the substrate cleaning of the first cleaning unit is performed, the exhaust pressure of the transfer unit and the second cleaning unit is increased so that the exhaust pressures in the transfer unit and the second cleaning unit are higher than the exhaust pressure of the first cleaning unit. Let's When the substrate cleaning of the second cleaning unit proceeds, the exhaust pressure in the transfer unit and the first cleaning unit is increased so that the exhaust pressure in the transfer unit and the first cleaning unit is higher than the exhaust pressure of the second cleaning unit. Exhaust treatment method characterized by increasing. The method of claim 8, The increase in the exhaust pressure in the transfer section and the first cleaning section, The external air inflow into the transfer section and the first cleaning section is greater than the external air inflow into the second cleaning section, The increase in the exhaust pressure in the conveying part and the second cleaning part, And an external air inflow amount into said transfer section and said second cleaning section is larger than an external air inflow rate into said first cleaning section. The method according to claim 8 or 9, The exhaust of the substrate cleaning unit, When cleaning the substrate of the first cleaning unit, the exhaust pressure in the transfer unit and the second cleaning unit is adjusted to be the same, And when the substrate cleaning of the second cleaning unit proceeds, the exhaust pressure in the transfer unit and the first cleaning unit is adjusted to be the same.

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