JP3530426B2 - Substrate immersion processing equipment - Google Patents
Substrate immersion processing equipmentInfo
- Publication number
- JP3530426B2 JP3530426B2 JP23372399A JP23372399A JP3530426B2 JP 3530426 B2 JP3530426 B2 JP 3530426B2 JP 23372399 A JP23372399 A JP 23372399A JP 23372399 A JP23372399 A JP 23372399A JP 3530426 B2 JP3530426 B2 JP 3530426B2
- Authority
- JP
- Japan
- Prior art keywords
- treatment
- processing
- substrate
- liquid
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板処理装置の浸
漬処理部において半導体ウエハや液晶用ガラス基板等の
薄板状の基板（以下単に基板と称する）を表面処理する
のに用いられる基板の浸漬処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to immersion of a substrate used for surface-treating a thin substrate (hereinafter simply referred to as a substrate) such as a semiconductor wafer or a glass substrate for liquid crystal in an immersion treatment section of a substrate processing apparatus. Regarding a processing device.
【０００２】[0002]
【従来の技術】上記基板処理装置としては、従来より例
えば図７に示すものがあり、その浸漬処理部１６５にお
いて用いられる基板の浸漬処理装置としては、図８に示
すもの（以下従来例１という）、あるいは、特開平４−
４２５３１号公報に開示されたもので、図９に示すもの
（以下従来例２という）が知られている。ここで図７は
基板処理装置全体の平面図である。2. Description of the Related Art The substrate processing apparatus described above is conventionally shown in FIG. 7 , for example, and the substrate immersion processing apparatus used in the immersion processing section 165 is shown in FIG. 8 (hereinafter referred to as conventional example 1). ), Or JP-A-4-
The one disclosed in Japanese Patent No. 42531 and shown in FIG. 9 (hereinafter referred to as Conventional Example 2) is known. Here, FIG. 7 is a plan view of the entire substrate processing apparatus.
【０００３】この基板処理装置１５０は、図７に示すよ
うに、基板Ｗを収容したカセットＣの搬入部１５１と、
カセットＣから基板Ｗを取り出す基板取出部１６０と、
複数の基板Ｗを一括保持して搬送する基板搬送ロボット
１７５と、基板搬送ロボット１７５のチャックハンドを
洗浄するチャック洗浄部１６３と、当該ロボット１７５
で保持した複数の基板Ｗを浸漬して順次処理する複数の
浸漬処理部１６５と、浸漬処理部１６５の後側に配置さ
れた乾燥部１７０と、カセットＣ内へ処理済みの基板Ｗ
を収納する基板収納部１８０と、基板Ｗを収納したカセ
ットＣを搬出する搬出部１５２とから構成されている。As shown in FIG. 7 , the substrate processing apparatus 150 includes a loading section 151 for a cassette C containing a substrate W,
A substrate take-out section 160 for taking out the substrate W from the cassette C;
A substrate transfer robot 175 that collectively holds and transfers a plurality of substrates W, a chuck cleaning unit 163 that cleans a chuck hand of the substrate transfer robot 175, and the robot 175.
The plurality of immersion treatment units 165 that sequentially immerse and process the plurality of substrates W held in the above, the drying unit 170 disposed on the rear side of the immersion treatment unit 165, and the processed substrate W in the cassette C.
And a unloading section 152 for unloading the cassette C containing the substrate W.
【０００４】そして上記浸漬処理部１６５には、例えば
図８（Ａ）（Ｂ）に示すような浸漬処理装置が配置さ
れ、各種の表面処理をなすように構成されている。図８
（Ａ）は基板Ｗを複数種の処理液による表面処理（以下
薬液処理という）をするための基板の浸漬処理装置であ
り、図８（Ｂ）は当該基板Ｗを純水ＤＷによるリンス処
理（以下純水処理という）をするための浸漬処理装置で
ある。これらの浸漬処理装置は、上記浸漬処理部１６５
（１６５ａ〜１６５ｆ）のいずれかに適宜配置される。In the immersion processing section 165, for example,
An immersion treatment apparatus as shown in FIGS. 8A and 8B is arranged and is configured to perform various surface treatments. Figure 8
FIG. 8A shows a substrate dipping treatment apparatus for performing surface treatment (hereinafter referred to as chemical treatment) on the substrate W with a plurality of types of treatment liquids, and FIG. 8B shows a rinse treatment of the substrate W with pure water D W. This is an immersion treatment device for performing (hereinafter referred to as pure water treatment). These immersion treatment devices are the same as the immersion treatment unit 165.
It is appropriately arranged in any of (165a to 165f).
【０００５】図８（Ａ）の浸漬処理装置は、処理液中に
基板Ｗを浸漬して表面処理をするオーバーフロー型の基
板処理槽１０１ａと、基板処理槽１０１ａに連結した処
理液供給路１０７と、処理液供給路１０７に処理液導入
弁１０８、フィルタ１１０、及び圧送ポンプ１１５を順
に介して連結した処理液貯留容器１０６と、基板処理槽
１０１ａよりオーバーフローした処理液を処理液貯留容
器１０６に回収する回収路１４２ａと、処理液供給路１
０７と回収路１４２ａとを開閉可能に連通する給排切換
弁１１３ａとを具備して成り、薬液処理に際して基板処
理槽１０１ａからオーバーフローした処理液を処理液貯
留容器６に還流させるように構成されている。The immersion processing apparatus shown in FIG . 8A has an overflow type substrate processing bath 101a for immersing a substrate W in a processing liquid for surface treatment, and a processing liquid supply path 107 connected to the substrate processing bath 101a. A processing liquid storage container 106 that is connected to the processing liquid supply path 107 via a processing liquid introduction valve 108, a filter 110, and a pressure pump 115 in order, and a substrate processing tank.
A recovery passage 142a for recovering the treatment liquid overflowing from 101a into the treatment liquid storage container 106, and the treatment liquid supply passage 1
07 is provided with a supply / exhaust switching valve 113a that opens and closes the recovery passage 142a, and is configured to return the processing liquid overflowing from the substrate processing bath 101a to the processing liquid storage container 6 during the chemical liquid processing. There is.
【０００６】また、図８（Ｂ）の浸漬処理装置は、オー
バーフロー型の基板洗浄槽１０１ｂと、基板洗浄槽１０
１ｂに連結した純水供給路１０３と、純水供給路１０３
に設けた純水導入弁１２７と、基板洗浄槽１０１ｂより
オーバーフローした純水を排水ドレン１４３に導出する
排水路１４２ｂと、純水供給路１０３と排水路１４２ｂ
とを開閉可能に連通する給排切換弁１１３ｂとを具備し
て成り、純水処理に際して基板洗浄槽１０１ｂからオー
バーフローした排水をドレン１４３に排出するように構
成されている。Further, the immersion treatment apparatus of FIG. 8B is provided with an overflow type substrate cleaning tank 101b and a substrate cleaning tank 10.
Pure water supply path 103 connected to 1b and pure water supply path 103
A pure water introduction valve 127, a drain passage 142b for leading the pure water overflowing from the substrate cleaning tank 101b to a drain drain 143, a pure water supply passage 103 and a drain passage 142b.
And a supply / exhaust switching valve 113b that communicates with each other in an openable / closable manner, and is configured to discharge the drainage overflowing from the substrate cleaning tank 101b to the drain 143 during pure water treatment.
【０００７】一方、従来例２は、図９に示すように、単
一の基板処理槽１０１内に複数種の処理液１０２を順次
供給して基板Ｗの表面処理を行うようにしたものであ
る。即ち、処理液１０２中に複数の基板Ｗを浸漬して基
板Ｗの表面処理をなすオーバーフロー型の基板処理槽１
０１と、基板処理槽１０１の下部より複数種の処理液１
０２を供給する処理液供給路１０３と、処理液供給路１
０３にそれぞれ処理液導入弁１０８Ａ〜１０８Ｃ及び流
量調節器１０７Ａ〜１０７Ｃを介して連通した複数個の
処理液貯留容器１０６Ａ〜１０６Ｃと、純水導入弁１０
８Ｄ及び流量調節器１０７Ｄを介して連通した純水供給
源１０６Ｄを備え、各導入弁１０８Ａ〜１０８Ｄを選択
的に開閉制御して所定の処理液ＱＡ〜ＱＣを基板処理槽
１０１へ供給するように構成されている。On the other hand, in the conventional example 2, as shown in FIG. 9 , the surface treatment of the substrate W is performed by successively supplying a plurality of types of treatment liquids 102 into a single substrate treatment bath 101. . That is, the overflow-type substrate processing bath 1 in which a plurality of substrates W are immersed in the processing liquid 102 for surface treatment of the substrates W
01 and a plurality of types of processing liquids 1 from the bottom of the substrate processing bath 101.
02, a processing liquid supply path 103, and a processing liquid supply path 1
A plurality of processing liquid storage container 106 A - 106 C which communicates via a respective processing solution introduction valve 108 A -108 C and flow controllers 107 A to 107 C to 03, the pure water inlet valve 10
Includes a pure water supply source 106 D which communicates via the 8 D and flow regulator 107 D, the substrate processing a predetermined processing liquid Q A to Q C each inlet valve 108 A -108 D selectively open and close control to It is configured to supply to the tank 101.
【０００８】上記処理液貯留容器１０６Ａ〜１０６Ｃの
うち、例えば処理液貯留容器１０６Ａには過酸化水素水
ＱＡ、１０６Ｂには塩酸ＱＢ、１０６Ｃにはフッ化水素
のようなエッチング剤ＱＣなどが貯留されている。そし
て、基板処理槽１０１はこれら複数種の表面処理毎に処
理液１０２の置換が可能なオーバーフロー型の処理槽と
して構成され、オーバーフローした処理液はドレン（図
示省略）へ排出される。[0008] Among the above-described processing liquid storage container 106 A - 106 C, the hydrogen peroxide solution Q A, 106 B are for example the treatment liquid storage container 106 A, such as hydrogen fluoride to hydrochloric Q B, 106 C such etchants Q C is stored. The substrate processing bath 101 is configured as an overflow type processing bath in which the processing liquid 102 can be replaced for each of these plural types of surface treatments, and the overflowed processing liquid is discharged to a drain (not shown).
【０００９】[0009]
【発明が解決しようとする課題】上記基板処理装置１５
０は、各浸漬処理部１６５ａ〜１６５ｆのそれぞれに図
８（Ａ）（Ｂ）の浸漬処理装置が配置されることから、
装置全体が大型化するという難点がある。また、従来例
２は複数の処理液による薬液処理ごとに、基板処理槽１
０１からオーバーフローした処理液をドレンに廃棄する
ので、処理液の消費量が多くなり、基板処理装置全体の
ランニングコストは高価になる。本発明は、このような
事情に鑑みてなされたもので、基板処理装置が大型化す
るのを防止し、併せてランニングコストの低減を図るこ
とを技術的課題とする。The substrate processing apparatus 15 described above.
0 indicates the respective dipping treatment units 165a to 165f .
Since 8 (A) and (B) immersion treatment devices are arranged,
There is a drawback that the entire device becomes large. In addition, in the conventional example 2, the substrate processing bath 1 is used for each chemical treatment with a plurality of treatment liquids.
Since the processing liquid overflowing from 01 is discarded in the drain, the consumption amount of the processing liquid increases and the running cost of the entire substrate processing apparatus becomes expensive. The present invention has been made in view of such circumstances, and it is a technical object to prevent the substrate processing apparatus from increasing in size and reduce the running cost.
【００１０】[0010]
【課題を解決するための手段】請求項１に記載の発明
は、前記課題を解決するために以下の構成を備える。即
ち、処理液中に基板を浸漬して基板の表面処理をなすオ
ーバーフロー型の基板処理槽と、上記基板処理槽に連結
した処理液供給路と、上記処理液供給路に処理液導入弁
及び圧送ポンプを順に介して連通した処理液貯留容器
と、上記処理液供給路に純水導入弁を介して連通した純
水供給路と、上記基板処理槽よりオーバーフローした排
液を排液ドレンに導出する排液路とを具備して成る基板
の浸漬処理装置において、上記排液路を分岐して一方は
上記排液ドレンに連通するとともに、他方は上記処理液
回収路として処理液回収弁を介して上記処理液貯留容器
に連通し、上記排液路から上記排液ドレンへの接続と上
記排液路から上記処理液貯留容器への接続とを切り換え
る排液弁を設け、上記処理液供給路の圧送ポンプと上記
処理液導入弁との間にフィルタを付設するとともに、上
記処理液導入弁よりも下流側に上記純水供給路を連通
し、上記処理液供給路を、上記フィルタと純水供給路接
続部との間で分岐させて上記処理液回収路に連通させ、
上記処理液導入弁により上記基板処理槽への接続と上記
処理液回収路への接続とを切換可能とするとともに、上
記処理液回収路を、上記処理液供給路との連通部よりも
下流側で分岐させて、上記処理液供給路の、上記圧送ポ
ンプよりも上流側に連通させ、上記処理液回収弁により
上記処理液貯留容器への接続と上記処理液供給路への接
続とを切換可能とし、薬液処理では、上記処理液貯留容
器内の処理液を上記処理液供給路から上記基板処理槽に
供給してオーバーフローさせ、上記排液路から上記処理
液回収弁を介して上記処理液供給路に流通させて上記基
板処理槽に還流させ、上記薬液処理の後で行われる純水
処理では、純水を上記純水供給路から上記基板処理槽に
供給してオーバーフローさせ、上記排液路から上記排液
弁を介して上記排液ドレンに廃棄し、この純水処理で
は、圧送ポンプで汲み上げた処理液を、上記処理液導入
弁を介して上記処理液回収路に流通させて上記処理液貯
留容器に還流させ、上記薬液処理から純水処理への移行
に際しては、上記処理液供給路から上記基板処理槽への
処理液の供給を停止し、続いて、上記基板処理槽に処理
液を入れた状態で、上記純水供給路から上記基板処理槽
に純水を供給して処理液をオーバーフローさせることに
より、上記基板処理槽内の処理液を純水に置き換える、
ことを特徴とするものである。The invention according to claim 1 has the following constitution in order to solve the problems. That is, an overflow type substrate processing tank for dipping a substrate in a processing liquid for surface treatment of the substrate, a processing liquid supply path connected to the substrate processing tank, a processing liquid introduction valve and pressure feed to the processing liquid supply path. A processing liquid storage container that communicates via a pump in order, a pure water supply passage that communicates with the processing liquid supply passage through a pure water introduction valve, and a drainage liquid that overflows from the substrate processing bath is led to a drainage drain. in the immersion treatment device substrate formed by comprising a drainage channel, one branches to the drainage path
Communicates with the upper Symbol drainage drain, the upper other communicates with the processing liquid storage container via the treatment liquid recovery valve as the process liquid recovery path, and a connection from the drains to the drainage drain
Switching from the drainage channel to the connection to the processing liquid storage container
A drain valve is provided, and a filter is attached between the pressure feed pump and the treatment liquid introduction valve in the treatment liquid supply passage, and the pure water supply passage is connected to the downstream side of the treatment liquid introduction valve. The treatment liquid supply passage is branched between the filter and the pure water supply passage connection portion to communicate with the treatment liquid recovery passage ,
Connection to the substrate processing tank by the processing liquid introduction valve and
The connection to the processing liquid recovery path can be switched and
The processing liquid recovery path is located farther than the communication part with the processing liquid supply path.
Branch on the downstream side, and use the pressure feed port of the processing liquid supply path.
Pump upstream of the pump, and by the processing liquid recovery valve above
Connection to the processing liquid storage container and connection to the processing liquid supply path
In the chemical liquid treatment, the treatment liquid in the treatment liquid storage container is supplied to the substrate treatment tank from the treatment liquid supply passage to cause overflow, and the treatment liquid recovery valve is passed from the drainage passage through the treatment liquid recovery valve. Flow through the treatment liquid supply path
In the pure water treatment performed after refluxing to the plate treatment tank and after the chemical solution treatment, pure water is supplied to the substrate treatment tank from the pure water supply passage to cause it to overflow, and the drain valve from the drain passage to the drain valve. In this pure water treatment, the treatment liquid pumped up by a pressure feed pump is introduced into the above-mentioned treatment liquid through the drainage drain.
It is circulated to the treatment liquid recovery passage through a valve and is returned to the treatment liquid storage container, and when the treatment liquid is transferred to the pure water treatment, the treatment liquid from the treatment liquid supply passage to the substrate treatment tank is treated. The supply of the substrate is stopped by continuously supplying the deionized water from the deionized water supply path to the substrate processing bath while the processing liquid is being supplied to the substrate processing bath. Replace the processing liquid inside with pure water,
It is characterized by that.
【００１１】また、請求項２に記載の発明は、ＨＦ中に
基板を浸漬して基板の表面処理をなすオーバーフロー型
の基板処理槽と、上記基板処理槽に連結した処理液供給
路と、上記処理液供給路に処理液導入弁及び圧送ポンプ
を順に介して連通した処理液貯留容器と、上記処理液供
給路に純水導入弁を介して連通した純水供給路と、上記
基板処理槽よりオーバーフローした排液を排液ドレンに
導出する排液路とを具備して成る基板の浸漬処理装置に
おいて、上記排液路を分岐して一方は上記排液ドレンに
連通するとともに、他方は上記処理液回収路として処理
液回収弁を介して上記処理液貯留容器に連通し、上記排
液路から上記排液ドレンへの接続と上記排液路から上記
処理液貯留容器への接続とを切り換える排液弁を設け、
上記処理液供給路の圧送ポンプと上記処理液導入弁との
間にフィルタを付設するとともに、上記処理液導入弁よ
りも下流側に上記純水供給路を連通し、上記処理液供給
路を、上記フィルタと純水供給路接続部との間で分岐さ
せて上記処理液回収路に連通させ、上記処理液導入弁に
より上記基板処理槽への接続と上記処理液回収路への接
続とを切換可能とするとともに、上記処理液回収路を、
上記処理液供給路との連通部よりも下流側で分岐させ
て、上記処理液供給路の、上記圧送ポンプよりも上流側
に連通させ、上記処理液回収弁により上記処理液貯留容
器への接続と上記処理液供給路への接続とを切換可能と
し、ＨＦ処理では、上記処理液貯留容器内のＨＦを上記
処理液供給路から上記基板処理槽に供給してオーバーフ
ローさせ、上記排液路から上記処理液回収弁を介して上
記処理液供給路に流通させて上記基板処理槽に還流さ
せ、上記ＨＦ処理の後で行われる純水処理では、純水を
上記純水供給路から上記基板処理槽に供給してオーバー
フローさせ、上記排液路から上記排液弁を介して上記排
液ドレンに廃棄し、この純水処理では、圧送ポンプで汲
み上げたＨＦを、上記処理液導入弁を介して上記処理液
回収路に流通させて上記処理液貯留容器に還流させ、上
記ＨＦ処理から純水処理への移行に際しては、上記処理
液供給路から上記基板処理槽へのＨＦの供給を停止し、
続いて、上記基板処理槽にＨＦを入れた状態で、上記純
水供給路から上記基板処理槽に純水を供給してＨＦをオ
ーバーフローさせることにより、上記基板処理槽内のＨ
Ｆを純水に置き換える、ことを特徴とするものである。The invention according to claim 2 is the overflow type substrate processing bath for dipping the substrate in HF for surface treatment of the substrate, the processing liquid supply path connected to the substrate processing bath, From the substrate processing tank, a treatment liquid storage container that communicates with the treatment liquid supply path through a treatment liquid introduction valve and a pressure feed pump in order, a pure water supply passage that communicates with the treatment liquid supply passage through a pure water introduction valve, in the immersion treatment device substrate formed by and a drainage path for deriving the drainage overflowed the drainage drain, with one hand branched to the drains communicating with the upper Symbol drainage drain and the other the communicates with the processing liquid storage container via the treatment liquid recovery valve as the processing liquid recovery path, the discharge
Connection from the drain to the drain drain and from the drain to the drain
Provided with a drain valve that switches between connection to the processing liquid storage container,
While attaching a filter between the treatment liquid supply passage pressure pump and the treatment liquid inlet valve communicates the pure water supply passage downstream of the treatment liquid introduction valve, the treatment liquid supply channel, There is a branch between the filter and the pure water supply path connection.
To communicate with the processing liquid recovery passage , and to the processing liquid introduction valve.
Connection to the substrate processing bath and contact to the processing liquid recovery path
It is possible to switch between continuation and
Branch at the downstream side of the communication part with the processing liquid supply path
The upstream side of the pressure feed pump in the processing liquid supply path
Through the processing liquid recovery valve,
It is possible to switch between the connection to the vessel and the connection to the processing liquid supply path.
Above and, in HF treatment, the HF of the processing liquid storage container to overflow and supplied to the substrate processing chamber from the treatment liquid supply passage, through the treatment liquid recovery valve from the drains
It is circulated in the processing liquid supply path and returned to the substrate processing tank.
In the pure water treatment performed after the HF treatment, pure water is supplied from the pure water supply passage to the substrate processing tank to cause overflow, and the drainage passage is passed through the drainage valve to drain the drainage fluid. In this pure water treatment, the HF pumped up by a pressure pump is circulated to the treatment liquid recovery passage through the treatment liquid introduction valve and is returned to the treatment liquid storage container in the pure water treatment. When transitioning to the water treatment, the supply of HF from the treatment liquid supply passage to the substrate treatment tank is stopped,
Subsequently, in a state where HF is put in the substrate processing tank, pure water is supplied from the pure water supply path to the substrate processing tank to cause HF to overflow, thereby removing H in the substrate processing tank.
It is characterized in that F is replaced with pure water.
【００１２】[0012]
【作用】請求項１の発明では、基板処理槽への処理液供
給路に純水導入弁を介して純水供給路を連通したことか
ら、一つの基板処理槽により薬液処理と純水処理とが順
次実行されることになる。また、上記排液路を分岐して
一方は排液ドレンに連通するとともに、他方は処理液回
収路として処理液回収弁を介して上記処理液貯留容器に
連通し、また、上記処理液回収路を分岐させて、処理液
回収路が上記処理液回収弁を介して処理液供給路の、圧
送ポンプよりも上流側に連通し、薬液処理では、処理液
貯留容器内の処理液が処理液供給路から基板処理槽に供
給されてオーバーフローし、上記排液路から処理液回収
弁を介して上記処理液供給路に流通し、再び基板処理槽
に還流する。つまり、処理液は廃棄されずに再利用され
る。他方、上記薬液処理の後で行われる純水処理では、
純水は純水供給路から基板処理槽に供給されてオーバー
フローし、上記排液路から排液弁を介して排液ドレンに
廃棄される。そして上記薬液処理から純水処理への移行
に際しては、処理液の供給が停止され、引き続き、上記
基板処理槽に処理液を入れた状態で純水が供給されてオ
ーバーフローすることにより、上記基板処理槽内の処理
液が純水に置き換えられる。つまり、基板処理槽内で
は、基板は空気に触れることなく、薬液処理から純水処
理へ移行する。また、前記処理液供給路の圧送ポンプと
前記処理液導入弁との間にフィルタを付設するととも
に、処理液導入弁よりも下流側に純水供給路を連通し、
上記処理液供給路を、上記フィルタと純水供給路接続部
との間で分岐させて、上記処理液導入弁を介して上記処
理液回収路に連通させたことから、薬液処理が行われて
いる間に、処理液はフィルタリングによりリフレッシュ
され（以下単に「フィルタリング」という）、また、純
水処理が行われる場合においても、圧送ポンプで汲み上
げられた処理液は、フィルタリングされてから処理液回
収路を流下し、再び処理液貯留容器に還流する。According to the first aspect of the present invention, since the pure water supply passage is connected to the treatment liquid supply passage to the substrate treatment tank through the pure water introduction valve, the chemical treatment and the pure water treatment are performed by one substrate treatment tank. Will be sequentially executed. Further, the one branched the drainage passage communicating with the drainage drain, the other is in communication with the processing liquid storage container via the treatment liquid recovery valve as the processing liquid recovery path, also the treatment liquid recovery path Processing solution
The recovery path is the pressure of the processing solution supply path through the processing solution recovery valve.
Communicating to the upstream side of the feed pump, in the chemical liquid processing, the processing liquid in the processing liquid storage container is supplied from the processing liquid supply passage to the substrate processing tank and overflows, and the processing liquid recovery valve is passed from the drainage passage through the processing liquid recovery valve. It circulates in the above-mentioned processing liquid supply path, and then returns to the substrate processing bath again. That is, the processing liquid is reused without being discarded. On the other hand, in the pure water treatment performed after the chemical liquid treatment,
Pure water is supplied from the pure water supply path to the substrate processing tank and overflows, and is discarded from the drainage path to a drainage drain via a drainage valve. When the chemical solution treatment is transferred to the pure water treatment, the supply of the treatment liquid is stopped, and then the pure water is supplied and overflows while the treatment liquid is contained in the substrate treatment tank, whereby the substrate treatment is performed. The treatment liquid in the bath is replaced with pure water. That is, in the substrate processing tank, the substrate is transferred from the chemical liquid treatment to the pure water treatment without contact with air. Further, a filter is attached between the pressure feed pump of the treatment liquid supply passage and the treatment liquid introduction valve, and the pure water supply passage is connected to the downstream side of the treatment liquid introduction valve,
Connect the processing liquid supply path to the filter and pure water supply path connection part
And the above processing liquid through the processing liquid introduction valve.
From what has communicated sense liquid recovery path, while the chemical solution processing is being performed, the processing solution is refreshed <br/> by filtering (hereinafter referred to simply as "filtering"), also pure water treatment line In the case where the processing liquid is pumped, the processing liquid pumped up by the pressure pump is filtered, then flows down through the processing liquid recovery passage, and then flows back to the processing liquid storage container.
【００１３】請求項２の発明においても、基板処理槽へ
の処理液供給路に純水導入弁を介して純水供給路を連通
したことから、一つの基板処理槽によりＨＦ処理と純水
処理とが順次実行される。また、上記排液路を分岐して
一方は排液ドレンに連通するとともに、他方は処理液回
収路として処理液回収弁を介して上記処理液貯留容器に
連通し、また、上記処理液回収路を分岐させて、処理液
回収路が上記処理液回収弁を介して処理液供給路の、圧
送ポンプよりも上流側に連通し、ＨＦ処理では、処理液
貯留容器内のＨＦが処理液供給路から基板処理槽に供給
されてオーバーフローし、上記排液路から処理液回収弁
を介して上記処理液供給路に流通し、再び基板処理槽に
還流して、ＨＦは廃棄されずに再利用される。他方、上
記ＨＦ処理の後で行われる純水処理では、純水は純水供
給路から基板処理槽に供給されてオーバーフローし、上
記排液路から排液弁を介して排液ドレンに廃棄される。
そして上記ＨＦ処理から純水処理への移行に際しては、
ＨＦの供給が停止され、引き続き、上記基板処理槽にＨ
Ｆを入れた状態で純水が供給されてオーバーフローする
ことにより、上記基板処理槽内のＨＦが純水に置き換え
られる。つまり、基板処理槽内では、基板は空気に触れ
ることなく、ＨＦ処理から純水処理へ移行する。また、
前記処理液供給路の圧送ポンプと前記処理液導入弁との
間にフィルタを付設するとともに、処理液導入弁よりも
下流側に純水供給路を連通し、上記処理液供給路を、上
記フィルタと純水供給路接続部との間で分岐させて、上
記処理液導入弁を介して上記処理液回収路に連通させた
ことから、ＨＦ処理が行われている間に、ＨＦはフィル
タリングされ、また、純水処理が行われる場合において
も、圧送ポンプで汲み上げられたＨＦは、フィルタリン
グされてから処理液回収路を流下し、再び処理液貯留容
器に還流する。Also in the second aspect of the invention, since the pure water supply passage is connected to the treatment liquid supply passage to the substrate treatment tank through the pure water introduction valve, the HF treatment and the pure water treatment are performed by one substrate treatment tank. And are sequentially executed. Further, the one branched the drainage passage communicating with the drainage drain, the other is in communication with the processing liquid storage container via the treatment liquid recovery valve as the processing liquid recovery path, also the treatment liquid recovery path Processing solution
The recovery path is the pressure of the processing solution supply path through the processing solution recovery valve.
Communicates with the upstream of the feed pump, with HF process, HF treatment liquid storage container is supplied from the processing liquid supply passage to the substrate processing chamber to overflow through the treatment liquid recovery valve from the drains above Circulates to the processing liquid supply path and returns to the substrate processing tank
Upon reflux , HF is reused without being discarded. On the other hand, in the pure water treatment performed after the HF treatment, pure water is supplied from the pure water supply path to the substrate processing tank and overflows, and is discarded from the drainage path to the drainage drain via the drainage valve. It
Then, when shifting from the HF treatment to the pure water treatment,
The supply of HF was stopped, and the H
Pure water is supplied in the state of containing F and overflows, so that HF in the substrate processing bath is replaced with pure water. That is, in the substrate processing tank, the substrate is transferred from the HF process to the pure water process without contact with air. Also,
While attaching a filter between the pressure pump of the treatment liquid supply channel treatment fluid introduction valve communicates the pure water supply passage downstream from the process liquid inlet valve, the processing liquid supply passage, upper
Branch between the filter and the pure water supply path connection to
Through the serial treatment liquid introduction valve since <br/> which communicated with the above-described processing liquid recovery path, while the HF processing is being performed, HF is filtered, and in the case where pure water treatment is carried out Also, the HF pumped up by the pressure pump is filtered, then flows down through the processing liquid recovery passage, and then is returned to the processing liquid storage container again.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。先ず、本発明が適用される基板洗
浄用の基板処理装置について説明する。図４は基板処理
装置の概略斜視図、図５は同装置の概略平面図、図６は
同装置の概略縦断面図である。本基板処理装置５０は、
後述する浸漬処理部６５において複数の基板処理槽１を
並設して半導体ウエハ（以下単にウエハという）の洗浄
処理を行うとともに、基板処理槽１からオーバーフロー
した洗浄液（以下単に処理液という）を処理液貯留容器
に６に回収してリサイクル可能にしたものである。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. First, a substrate processing apparatus for cleaning a substrate to which the present invention is applied will be described. 4 is a schematic perspective view of the substrate processing apparatus, FIG. 5 is a schematic plan view of the apparatus, and FIG. 6 is a schematic vertical sectional view of the apparatus. The substrate processing apparatus 50 is
A plurality of substrate processing baths 1 are arranged in parallel in a dipping processing unit 65 to be described later to perform a cleaning process on semiconductor wafers (hereinafter simply referred to as wafers), and a cleaning liquid overflowed from the substrate processing bath 1 (hereinafter simply referred to as a processing liquid) is processed. The liquid is stored in a liquid storage container and can be recycled.
【００１５】図４〜図６に示すように、この基板処理装
置５０は、基板収容カセットＣの搬入搬出部５１と、カ
セットＣからウエハＷを取り出し又はカセットＣ内へウ
エハＷを装填する基板移載部６０と、カセットＣの搬入
搬出部５１と基板移載部６０との間でカセットＣを移載
するカセット移載ロボット５５と、複数のウエハＷを一
括して洗浄する浸漬処理部６５と、ウエハＷの液切り基
板乾燥部７０と、基板移載部６０でカセットＣから取り
出した複数のウエハＷを一括保持して上記浸漬処理部６
５及び基板乾燥部７０に搬送する基板搬送ロボット７５
とから構成される。As shown in FIGS. 4 to 6 , the substrate processing apparatus 50 includes a loading / unloading section 51 of a substrate accommodating cassette C and a substrate transfer for taking out a wafer W from the cassette C or loading the wafer W into the cassette C. A loading unit 60, a cassette transfer robot 55 that transfers the cassette C between the loading / unloading unit 51 of the cassette C and the substrate transfer unit 60, and an immersion processing unit 65 that collectively cleans a plurality of wafers W. The liquid-drained substrate drying unit 70 for the wafers W and the plurality of wafers W taken out of the cassette C by the substrate transfer unit 60 are collectively held, and the immersion processing unit 6 is operated.
5 and the substrate transport robot 75 for transporting to the substrate drying unit 70
Composed of and.
【００１６】上記カセット移載ロボット５５は、図４〜
図６に示すように、昇降及び回転自在で、矢印Ａ方向に
移動可能に構成され、搬入搬出部５１に搬入されてきた
カセットＣを基板移載部６０のテーブル６１上に移載
し、また、洗浄済みウエハＷを収容したカセットＣを当
該テーブル６１から搬入搬出部５１へ移載するように構
成される。また、上記基板搬送ロボット７５は、図４〜
図６に示すように、矢印Ｂ方向に移動可能に設けられ、
上記基板移載部６０のリフター６４から受け取った複数
のウエハＷを基板搬送ロボット７５の基板挾持アーム７
６で保持し、移動部７７に沿って浸漬処理部６５内及び
基板乾燥部７０内へ順次搬送するように構成される。The cassette transfer robot 55 is shown in FIGS.
As shown in FIG. 6 , the cassette C is configured to be movable up and down and rotatable and movable in the direction of arrow A, and the cassette C carried into the carry-in / carry-out section 51 is transferred onto the table 61 of the substrate transfer section 60. The cassette C containing the cleaned wafer W is transferred from the table 61 to the loading / unloading section 51. Further, the substrate transfer robot 75 is shown in FIG.
As shown in FIG. 6 , provided so as to be movable in the direction of arrow B,
The plurality of wafers W received from the lifter 64 of the substrate transfer unit 60 are transferred to the substrate holding arm 7 of the substrate transfer robot 75.
It is configured to be held in No. 6 and sequentially conveyed along the moving unit 77 into the immersion treatment unit 65 and the substrate drying unit 70.
【００１７】上記浸漬処理部６５には、以下に述べるよ
うに、本発明に係る各種の浸漬処理装置が配設される。
ただし、図４〜図６においては、基板処理槽１を３個並
設したものが例示してある。即ち、上記浸漬処理部６５
は、オーバーフロー型の基板処理槽１を３個並設して成
り、各基板処理槽１に昇降可能に設けた基板保持具６６
により、前記基板搬送ロボット７５から受け取った複数
のウエハＷを各基板処理槽１内に順次浸漬可能に構成さ
れる。なお、本発明の実施形態に係る浸漬処理装置の具
体的な内容については後述する。The immersion treatment section 65 is provided with various immersion treatment devices according to the present invention as described below.
However, in FIGS. 4 to 6 , three substrate processing baths 1 arranged side by side are illustrated. That is, the immersion treatment unit 65
Is formed by arranging three overflow type substrate processing baths 1 in parallel, and a substrate holder 66 is provided in each substrate processing bath 1 so as to be able to move up and down.
Thus, the plurality of wafers W received from the substrate transfer robot 75 can be sequentially dipped in each substrate processing tank 1. The specific contents of the immersion treatment apparatus according to the embodiment of the present invention will be described later.
【００１８】上記基板乾燥部７０は、例えば本出願人の
提案に係る特開平１−２５５２２７号公報に開示したよ
うに、ウエハＷの主平面の中心近傍を回転中心として、
回転遠心力で液切り乾燥する乾燥処理槽７１を具備して
成る。なお、この基板乾燥部７０は、当該遠心式のもの
に代えて、有機溶剤等を使用した乾燥方式、又はこれに
加えて加熱蒸気や減圧による乾燥方式により乾燥を促進
するようにしても差し支えない。The substrate drying unit 70 has a rotation center near the center of the main plane of the wafer W, as disclosed in, for example, Japanese Patent Application Laid-Open No. 1-255227 proposed by the present applicant.
It is provided with a drying treatment tank 71 for draining and drying with a rotating centrifugal force. It should be noted that the substrate drying unit 70 may accelerate the drying by a drying method using an organic solvent or the like instead of the centrifugal type, or by a heating steam or reduced pressure drying method in addition to this. .
【００１９】上記基板処理装置５０のレイアウトとして
は、図４〜図６に示すように、クリーンルーム作業域３
０に臨む前方から保全用作業域３１に臨む後方に向かっ
て前記カセットＣの搬入搬出部５１、基板移載部６０、
基板乾燥部７０及び浸漬処理部６５を順番に配置する。
また、図４〜図６に示すように、上記浸漬処理部６５の
３つの基板処理槽１の下部に処理液の給排用配管室２０
を、また、この給排用配管室２０の下部に洗浄用の処理
液貯留容器６を上下３段に配置する。さらに、図４及び
図５に示すように、上記基板移載部６０・基板乾燥部７
０・浸漬処理部６５の右側に基板搬送ロボット７５の移
動部７７を前後方向に形成し、これらの左側の空間で、
前記基板移載部６０よりも後方の空間をメンテナンス・
スペース９０として形成する。なお、メンテナンス・ス
ペース９０の床部には複数の配管、バルブ等が敷設され
る。As the layout of the substrate processing apparatus 50, as shown in FIGS.
The loading / unloading section 51 of the cassette C, the substrate transfer section 60, from the front facing 0 to the rear facing the maintenance work area 31,
The substrate drying unit 70 and the immersion processing unit 65 are arranged in order.
Further, as shown in FIGS. 4 to 6 , the processing liquid supply / discharge piping chamber 20 is provided below the three substrate processing tanks 1 of the immersion processing unit 65.
Further, the processing liquid storage containers 6 for cleaning are arranged in the upper and lower three stages below the supply / discharge pipe chamber 20. Furthermore, FIG.
As shown in FIG. 5 , the substrate transfer section 60 and the substrate drying section 7 are provided.
The moving section 77 of the substrate transfer robot 75 is formed in the front-rear direction on the right side of the 0 / immersion processing section 65, and in the space on the left side of these,
Maintenance of the space behind the substrate transfer section 60
The space 90 is formed. A plurality of pipes, valves, etc. are laid on the floor of the maintenance space 90.
【００２０】即ち、上記基板処理装置５０では、浸漬処
理部６５の基板処理槽１と、給排用配管室２０と、処理
液貯留容器６とを上下３段に積み上げ、縦方向にレイア
ウトするので、これらの積み上げ部の左側に臨んだエリ
アにメンテナンス・スペース９０を確保できる。換言す
ると、図５に示すように、浸漬処理部６５や基板移載部
６０などの各種作業ブロックを平面視でＬ字状にまとめ
ることにより、基板処理装置５０内の余剰空間をメンテ
ナンス・スペース９０として設定できる。また、主に浸
漬処理部６５を縦向きに積み上げることにより、基板処
理装置５０全体をコンパクトにまとめてクリーンルーム
全体の省スペース化を効率良く図れるうえ、当該基板Ｗ
処理装置５０の設置数が増えるほど、クリーンルームに
おけるスペースの有効利用率を一層高められる。That is, in the substrate processing apparatus 50, the substrate processing tank 1 of the immersion processing unit 65, the supply / discharge piping chamber 20, and the processing liquid storage container 6 are stacked vertically and laid out vertically. The maintenance space 90 can be secured in the area facing the left side of these stacked parts. In other words, as shown in FIG. 5 , various working blocks such as the immersion processing unit 65 and the substrate transfer unit 60 are put together in an L shape in a plan view, so that the surplus space in the substrate processing apparatus 50 is maintained as a maintenance space 90. Can be set as Further, by mainly stacking the dipping processing unit 65 vertically, the entire substrate processing apparatus 50 can be compactly assembled to efficiently save space in the clean room, and the substrate W
As the number of the processing devices 50 installed increases, the effective utilization rate of the space in the clean room can be further increased.
【００２１】また、上記浸漬処理部６５の基板処理槽１
及び基板乾燥部７０のレイアウトでは、図４〜図６に示
すように、保全用作業域３１に臨む奥側からクリーンル
ーム作業域３０に臨む前側に向かって、３つのオーバー
フロー型の基板処理槽１と乾燥処理部７０と前記基板移
載部６０とを順番に配列する。即ち、上記基板乾燥部７
０は浸漬処理部６５と基板移載部６０の間に配置される
ので、洗浄処理されたウエハＷを可能な限り早く乾燥さ
せ、カセットＣに戻して搬入搬出部５１から効率良く搬
出できる。その反面、この基板乾燥工程はカセットＣへ
の戻しに対する時間的制約を強くは受けず、乾燥処理の
完了から基板移載部６０への戻しの間に待機時間を取れ
るので、作業工程の面で隣接状の基板移載部６０に対し
て乾燥処理部７０にバッファ的な役割を担わせることが
できる。Further, the substrate processing tank 1 of the dipping processing unit 65.
In the layout of the substrate drying unit 70, as shown in FIGS. 4 to 6 , three overflow type substrate processing tanks 1 are provided from the back side facing the maintenance work area 31 to the front side facing the clean room work area 30. The drying processing unit 70 and the substrate transfer unit 60 are arranged in order. That is, the substrate drying unit 7
Since 0 is arranged between the immersion processing unit 65 and the substrate transfer unit 60, the cleaned wafer W can be dried as soon as possible, returned to the cassette C, and efficiently carried out from the carry-in / carry-out unit 51. On the other hand, this substrate drying step is not strongly restricted by the time required for returning to the cassette C, and a waiting time can be taken between the completion of the drying process and the returning to the substrate transfer section 60. The drying processing section 70 can play a role of a buffer with respect to the adjacent substrate transfer section 60.
【００２２】また、通常、酸洗浄処理においては昇温し
た酸を使用するので、酸の蒸気やミストが発生し易い
が、例えば、クリーンルーム作業域３０から最も遠い奥
側の基板処理槽１でこの酸洗浄処理を実施する場合に
は、クリーンルーム作業域３０への悪影響を防止して作
業の安全性を確保できる。以下、上記浸漬処理部６５に
配設される各種浸漬処理装置の実施形態について順次説
明する。Further, since the temperature-raised acid is usually used in the acid cleaning process, acid vapor or mist is apt to be generated. For example, in the substrate processing tank 1 on the far side farthest from the clean room work area 30, When carrying out the acid cleaning treatment, it is possible to prevent the adverse effect on the clean room work area 30 and ensure the work safety. Hereinafter, embodiments of various immersion treatment devices arranged in the immersion treatment unit 65 will be sequentially described.
【００２３】図１は本発明の実施形態１に係る浸漬処理
装置の概略系統図を示し、同図（Ａ）中の太線は薬液処
理の場合の処理液循環経路を、同図（Ｂ）中の太線は純
水処理の場合の純水経路及び処理液循環経路を示す。こ
の浸漬処理装置は、前記浸漬処理部６５に単一の基板処
理槽１を配設するとともに、薬液処理及び純水処理が行
われる間に処理液の循環フィルタリングと温度調整とを
実行するためのものである。この浸漬処理装置は、図１
に示すように、処理液、例えばフッ化水素（以下ＨＦと
いう）中に複数の基板Ｗを一括して浸漬して基板Ｗの表
面洗浄をなす基板処理槽１と、基板処理槽１の下部より
処理液を供給する処理液供給路７と、処理液供給路７に
処理液導入弁（三方弁）８及び圧送ポンプ１５を順に介
して連通した処理液貯留容器６と、処理液供給路７に純
水導入弁２７を介して連通した純水供給路３と、基板処
理槽１よりオーバーフローした排液をドレン４３に導出
する排液路４２とを具備して成る。FIG. 1 is a schematic system diagram of an immersion treatment apparatus according to the first embodiment of the present invention. The thick line in FIG. 1 (A) shows the treatment liquid circulation path in the case of chemical treatment, and in FIG. 1 (B). The thick line indicates the pure water path and the processing solution circulation path in the case of pure water processing. In this immersion processing apparatus, a single substrate processing tank 1 is provided in the immersion processing section 65, and the processing solution is circulated and filtered and the temperature is adjusted while the chemical solution processing and the pure water processing are performed. It is a thing. This immersion treatment device is shown in FIG.
As shown in FIG. 1, a substrate processing bath 1 for cleaning the surface of the substrates W by immersing a plurality of substrates W in a processing liquid, for example, hydrogen fluoride (hereinafter referred to as HF) all at once, The processing liquid supply path 7 for supplying the processing liquid, the processing liquid storage container 6 communicating with the processing liquid supply path 7 through the processing liquid introduction valve (three-way valve) 8 and the pressure feed pump 15 in order, and the processing liquid supply path 7. It is provided with a pure water supply passage 3 communicating with the pure water introduction valve 27, and a drain passage 42 for leading the drainage overflowed from the substrate processing bath 1 to the drain 43.
【００２４】上記基板処理槽１は、図１に示すように、
石英ガラス製で側面視略Ｖ字状・平面視略矩形状に形成
され、その下部に処理液供給路７を連結して成り、基板
処理槽１内に処理液の均一な上昇流を形成して基板Ｗを
表面処理するとともに、処理液を複数種の洗浄処理毎
に、迅速に置換し得るオーバーフロー槽として形成され
る。当該基板処理槽１は石英ガラス製に限らず、例え
ば、石英ガラスを腐蝕させてしまうＨＦ等を洗浄液に用
いる場合には、耐食性を有する四フッ化エチレン樹脂等
の樹脂製材料で形成したものでも良い。The substrate processing bath 1 is, as shown in FIG.
It is made of quartz glass and is formed into a substantially V shape in a side view and a substantially rectangular shape in a plan view, and a processing liquid supply path 7 is connected to the lower part thereof to form a uniform upward flow of the processing liquid in the substrate processing bath 1. The surface treatment of the substrate W is performed, and the treatment liquid is formed as an overflow tank that can be rapidly replaced for each cleaning treatment of a plurality of types. The substrate processing tank 1 is not limited to quartz glass, and for example, when HF or the like that corrodes quartz glass is used as a cleaning liquid, it may be formed of a resin material such as tetrafluoroethylene resin having corrosion resistance. good.
【００２５】処理液を供給するための構成は、図１に示
すように、基板処理槽１の下部に連結した処理液供給路
７と、処理液供給路７に処理液導入弁８及び圧送ポンプ
１５を介して連結した処理液貯留容器６と、上記処理液
供給路７に純水導入弁２７を介して連通した純水供給路
３及び純水供給源（図示省略）とを具備して成る。そし
て、処理液導入弁８よりも下流側に純水供給路３を連通
するとともに、圧送ポンプ１５と処理液導入弁８との間
にフィルタ１０とインライン型のヒータ（「インライン
ヒータ」という）８１とを付設する。なお、純水供給路
３は常温の又は所定温度に加熱した純水ＤＷを供給する
純水の主要通路となるが、純水ＤＷは、基板の表面酸化
を防ぐ上で、脱酸素処理を施したものを用いるのが好ま
しい。As shown in FIG. 1, the structure for supplying the processing liquid is a processing liquid supply path 7 connected to the lower portion of the substrate processing bath 1, a processing liquid introduction valve 8 and a pressure pump for the processing liquid supply path 7. A treatment liquid storage container 6 connected via 15 and a pure water supply passage 3 and a pure water supply source (not shown) connected to the treatment liquid supply passage 7 via a pure water introduction valve 27. . Then, the pure water supply path 3 is connected to the downstream side of the treatment liquid introduction valve 8, and the filter 10 and the in-line heater (referred to as “in-line heater”) 81 are provided between the pressure feed pump 15 and the treatment liquid introduction valve 8. And are attached. The pure water supply passage 3 serves as a main passage for the pure water for supplying the pure water D W that has been heated to room temperature or a predetermined temperature. The pure water D W is used for deoxidation treatment in order to prevent surface oxidation of the substrate. It is preferable to use a product that has been subjected to.
【００２６】上記処理液導入弁８を、処理液供給路７を
導通させるように切り換えると、処理液貯留容器６内の
処理液が圧送ポンプ１５で基板処理槽１に圧送され、基
板処理槽１よりオーバーフローされ、薬液処理が行われ
る。また、上記純水導入弁２７を開弁すると、純水ＤＷ
が純水供給路３から基板処理槽１に供給され、オーバー
フローして純水処理が行われる。即ち、処理液導入弁８
と純水導入弁２７との切り換え操作で処理液と純水ＤＷ
を処理液供給路７に選択的に供給可能に構成される。な
お、上記処理液貯留容器６には、処理液が自動的に補充
可能に構成されている。When the processing liquid introducing valve 8 is switched so that the processing liquid supply passage 7 is made conductive, the processing liquid in the processing liquid storage container 6 is pressure-fed by the pressure feed pump 15 to the substrate processing tank 1 and the substrate processing tank 1 Further overflow, chemical treatment is performed. When the pure water introduction valve 27 is opened, the pure water D W
Is supplied to the substrate processing bath 1 from the pure water supply path 3 and overflows to perform pure water processing. That is, the processing liquid introduction valve 8
And the pure water introduction valve 27 are switched between the processing liquid and the pure water D W
Is selectively supplied to the processing liquid supply path 7. The processing liquid storage container 6 can be automatically replenished with the processing liquid.
【００２７】処理液を排出するための構成は、図１に示
すように、基板処理槽１の上側部に付設したオーバーフ
ロー液回収部４１と、オーバーフローした処理液を排出
する排液路４２とを具備して成る。上記排液路４２の流
通下手側を二股状に分岐して、その一方の管路２１を排
液ドレン４３に接続し、その他方を処理液回収路２２と
して前記処理液貯留容器６に接続する。排液路４２の分
岐部には、切換可能な三方弁で構成された排液弁４７を
介設する。そして、処理液供給路７と処理液回収路２２
とを切換可能な処理液導入弁８を介して接続する。ま
た、処理液回収路２２に切換可能な処理液回収弁４４を
付設するとともに、処理液供給路７の圧送ポンプ上流側
と処理液回収路２２とを上記処理液回収弁４４を介して
接続する。 As shown in FIG. 1, the structure for discharging the processing liquid comprises an overflow liquid recovery section 41 attached to the upper part of the substrate processing tank 1 and a drainage channel 42 for discharging the overflowing processing liquid. It is equipped with. The lower flow side of the drainage path 42 is branched into a bifurcated shape, one of the conduits 21 is connected to the drainage drain 43, and the other is connected to the processing solution storage container 6 as a processing solution recovery path 22. . A drain valve 47 formed of a switchable three-way valve is provided at a branch portion of the drain path 42. Then, the processing liquid supply path 7 and the processing liquid recovery path 22
Are connected via a process liquid introduction valve 8 which can be switched. Well
In addition, a treatment liquid recovery valve 44 that can be switched to the treatment liquid recovery passage 22 is provided.
Attached and upstream of the pressure feed pump in the processing liquid supply path 7.
And the treatment liquid recovery passage 22 via the treatment liquid recovery valve 44.
Connecting.
【００２８】本実施形態１では、図１に示すように、基
板処理槽１の下部には、処理液貯留容器６から導出した
処理液供給路７が処理液導入弁８を介して接続されてお
り、所定の処理液が処理液貯留容器６から基板処理槽１
に供給される。また、基板処理槽１の下部には純水供給
路３が純水導入弁２７を介して接続されており、純水Ｄ
Ｗが基板処理槽１に供給可能になっている。そして、基
板処理槽１の上部から導出した排液路４２の下流側は、
切換可能な排液弁４７及び処理液回収路２２を介して連
通された処理液貯留容器６の側と、切換可能な排液弁４
７及び管路２１を介して連通された排液ドレン４３の側
との２方向に分岐されている。薬液処理が行われる場合
には、図１（Ａ）に示すように、基板処理槽１からオー
バーフロー液回収部４１へオーバーフローした処理液
は、排液弁４７を介して処理液回収路２２を流下し、処
理液貯留容器６を介さず上記処理液回収弁４４を介して
処理液供給路７に流入し、フィルタ１０により濾過され
てリフレッシュされた後、再び基板処理槽１に還流す
る。従って、基板処理槽１からオーバーフローした処理
液は、処理液回収路２２を経て処理液供給路７に流入し
て再利用されるので、複数種の薬液処理毎に処理液を廃
棄する従来例２に比べて処理液の消費量を効果的に抑制
して、基板処理装置全体のランニングコストを低減でき
る。In the first embodiment, as shown in FIG. 1, a processing liquid supply path 7 led out from the processing liquid storage container 6 is connected to a lower portion of the substrate processing tank 1 through a processing liquid introduction valve 8. And a predetermined processing liquid is transferred from the processing liquid storage container 6 to the substrate processing tank 1
Is supplied to. Further, a pure water supply path 3 is connected to a lower portion of the substrate processing tank 1 through a pure water introduction valve 27, and the pure water D
W can be supplied to the substrate processing bath 1. Then, the downstream side of the drainage path 42 led out from the upper part of the substrate processing tank 1 is
The switchable drain valve 4 and the switchable drain valve 47 and the process liquid storage container 6 side which are communicated via the process liquid recovery path 22.
7 and the side of the drainage drain 43 which is communicated via the pipe 21 are branched in two directions. When chemical treatment is performed, as shown in FIG. 1 (A), the treatment liquid overflowed from the substrate treatment tank 1 to the overflow liquid recovery part 41 flows down the treatment liquid recovery passage 22 via the drain valve 47. Then
Through the processing liquid recovery valve 44 without passing through the physical liquid storage container 6
After flowing into the processing liquid supply path 7 and being filtered by the filter 10 to be refreshed, it is returned to the substrate processing bath 1 again . Therefore, the processing liquid overflowing from the substrate processing bath 1 flows into the processing liquid supply passage 7 through the processing liquid recovery passage 22.
Since it is reused as described above, it is possible to effectively suppress the consumption amount of the processing liquid and reduce the running cost of the entire substrate processing apparatus, as compared with the conventional example 2 in which the processing liquid is discarded for each of a plurality of types of chemical liquid processing.
【００２９】また、純水処理が行われる場合には、図１
（Ｂ）に示すように、オーバーフローした純水は、切換
可能な排液弁４７及び管路２１を介して排液ドレン４３
に排出される。この純水処理中において、圧送ポンプ１
５で汲み上げられた処理液は、フィルタ１０により濾過
されてリフレッシュされた後、切換可能な処理液導入弁
８を介して処理液回収路２２に流入し、処理液回収路２
２を流下して、上記処理液回収弁４４を介して再び処理
液貯留容器６に還流する。上記構成により単一の基板処
理槽１を用いる場合でも、薬液処理及び純水処理が行わ
れる間に処理液の循環フィルタリングが行われ、処理液
をリフレッシュさせることができる。また、前記インラ
インヒータ８１は、例えば管路の外周にヒータを配設し
た構成を具備し、管路を通過する処理液を加熱する。こ
のため、上述した純水処理中においても、循環する処理
液を均一な温度に調整しておくことができ、特に高温薬
液処理を行う場合に、所定温度の処理液を基板処理槽内
に供給して直ちに洗浄処理に移行することが可能にな
る。When pure water treatment is performed, the process shown in FIG.
As shown in (B), the pure water that has overflowed is drained drain 43 through the switchable drain valve 47 and the conduit 21.
Is discharged to. During this pure water treatment, the pressure pump 1
The processing liquid pumped up in 5 is filtered by the filter 10 and refreshed, and then flows into the processing liquid recovery passage 22 through the switchable processing liquid introduction valve 8 and the processing liquid recovery passage 2
2 is flowed down, and is returned to the processing liquid storage container 6 again via the processing liquid recovery valve 44 . Even when a single substrate processing tank 1 is used with the above configuration, the processing solution is circulated and filtered during the chemical solution processing and the pure water processing, so that the processing solution can be refreshed. The in-line heater 81 has, for example, a structure in which a heater is arranged on the outer periphery of the pipeline, and heats the processing liquid passing through the pipeline. Therefore, the circulating treatment liquid can be adjusted to a uniform temperature even during the pure water treatment described above, and a treatment liquid having a predetermined temperature can be supplied into the substrate treatment tank especially when performing high-temperature chemical treatment. Then, the cleaning process can be immediately started.
【００３０】また、この浸漬処理装置では、処理液を基
板処理槽１の上部からオーバーフローさせるので、薬液
処理から純水処理に移行する際には、基板処理槽１内の
処理液を全部排出せずとも処理液を純水に置換すること
が可能であり、薬液処理及び純水処理が完了するまでウ
エハＷは空気に触れない。このため、ウエハ表面に酸化
皮膜が形成されたり、空気中の不純物が付着したりする
虞れはない。すなわち、例えばＨＦ処理の場合には、Ｈ
Ｆ処理した後にウエハＷを空気に接触させると、ＨＦ、
Ｏ２、とＳｉとが反応し、ウエハＷの表面に不純化合物
が生じてパーティクルとなる。このため、ＨＦを基板処
理槽１に供給して循環した後、ＨＦの供給を停止し、続
いて、基板処理槽１にＨＦを入れた状態で純水を供給
し、オーバーフローさせることによりＨＦを純水に置き
換えていく。これにより、ウエハＷは常に液中に留ま
り、純水の連続供給によりＨＦ成分はパーティクルを発
生することなく除去される。また、基板処理槽１内の処
理液を全部排出せずともウエハＷの装填や取り出しがで
きる。Further, in this immersion processing apparatus, since the processing liquid overflows from the upper portion of the substrate processing tank 1, when the chemical liquid processing is transferred to the pure water processing, all the processing liquid in the substrate processing tank 1 is discharged. It is possible to replace the processing liquid with pure water, and the wafer W does not come into contact with air until the chemical liquid processing and the pure water processing are completed. Therefore, there is no risk that an oxide film will be formed on the wafer surface or that impurities in the air will adhere. That is, for example, in the case of HF processing, H
When the wafer W is brought into contact with air after the F processing, HF,
O 2 and Si react with each other, and an impure compound is generated on the surface of the wafer W to form particles. Therefore, after HF is supplied to the substrate processing tank 1 and circulated, the supply of HF is stopped, and subsequently, pure water is supplied in a state where HF is placed in the substrate processing tank 1 to cause overflow, thereby Replace with pure water. As a result, the wafer W always stays in the liquid, and the continuous supply of pure water removes the HF component without generating particles. Further, the wafer W can be loaded and unloaded without discharging all the processing liquid in the substrate processing bath 1.
【００３１】上記純水による最終リンス処理では、純水
の比抵抗値を検出したり、一定時間の経過により、純水
処理が完了するように構成される。また、最終リンスが
完了した後に基板処理槽１からウエハＷを引き上げる場
合には、浮遊したパーティクルがウエハＷに付着するの
を防止するため、純水をオーバーフローさせながら行
う。In the final rinse treatment with pure water, the pure water treatment is completed when the specific resistance value of the pure water is detected or when a fixed time elapses. Further, when the wafer W is pulled up from the substrate processing bath 1 after the final rinse, in order to prevent the floating particles from adhering to the wafer W, the deionized water is overflowed.
【００３２】なお、上記実施形態１における利点とし
て、単一の基板処理槽１を用いて薬液処理と純水処理と
を実施することにより基板処理槽１の個数を減らして基
板処理装置の大型化を防止できる点、処理液を再利用す
ることによりランニングコストを低減できる点、薬液処
理から純水処理に移行する際に基板処理槽１内の処理液
を全部排出しないで処理液を純水に置換することにより
ウエハ表面に酸化皮膜が形成されるのを防止できる点が
挙げられるが、これらの利点は、後述する実施形態２及
び実施形態３においても同様であり、重複する説明は省
略する。As an advantage of the first embodiment, the chemical treatment and the pure water treatment are carried out using a single substrate processing bath 1 to reduce the number of substrate processing baths 1 and increase the size of the substrate processing apparatus. Can be prevented, the running cost can be reduced by reusing the processing liquid, and the processing liquid can be converted into pure water without draining all the processing liquid in the substrate processing bath 1 when shifting from the chemical liquid processing to the pure water processing. Although substitution can prevent the formation of an oxide film on the wafer surface, these advantages are described in Embodiment 2 and later.
The same applies to the third embodiment and the third embodiment , and duplicate description will be omitted.
【００３３】[0033]
【００３４】[0034]
【００３５】また、上記実施形態１においては、薬液処
理が行われる際には、処理液は圧送ポンプ１５で吸引さ
れて処理液回収路２２を流下することになるので、処理
液回収路２２の管径が細くても、流下する処理液の流量
は多くなる。つまり、処理液回収路２２は管径の細いも
ので足りるという利点がある。 Further, in the above embodiment 1, when the chemical treatment is performed, the treatment liquid means flowing down processing liquid recovery path 22 is sucked by the pressure pump 15, of the processing liquid recovery path 22 Even if the pipe diameter is small , the flow rate of the processing liquid flowing down
Multi Kunar. That is, there is an advantage that the treatment liquid recovery passage 22 need only have a small pipe diameter.
【００３６】図２は本発明の実施形態２に係る浸漬処理
装置の概略系統図を示す。この実施形態２は、実施形態
１（図１）と同様の浸漬処理装置を３組並設して構成し
たものである。この実施形態２では、図２に示すよう
に、各基板処理槽１においてそれぞれ所定の処理液ＱＡ
〜ＱＣにより前記類型の薬液処理が別々に行われ、ウエ
ハＷを表面処理した各処理液ＱＡ〜ＱＣは、各処理液貯
留容器６に回収されて再利用される。また、循環フィル
タリングにより各処理液ＱＡ〜ＱＣをリフレッシュさせ
ることやインラインヒータ８１により各処理液ＱＡ〜Ｑ
Ｃの温度調整を行うこともできる。FIG . 2 is a schematic system diagram of an immersion treatment apparatus according to the second embodiment of the present invention. This Embodiment 2 is an embodiment
1 ( FIG. 1 ) and three dipping treatment devices similar to each other. In Embodiment 2, as shown in FIG. 2, each predetermined processing solution Q A in each substrate processing tank 1
Chemical treatment of the type by to Q C is carried out separately, each processing solution Q A to Q C where the wafer W surface treatment is recycled is collected in the processing liquid storage container 6. Further, each processing solution Q A to Q by each processing solution Q be refreshed A to Q C and in-line heater 81 by a circulation filtering
The temperature of C can also be adjusted.
【００３７】図３は本発明の実施形態３に係る浸漬処理
装置の概略系統図を示す。この浸漬処理装置は、実施形
態２（図２）において基板処理槽１のうちの１槽を、純
水処理用のリンス専用槽に設定したものであり、他の２
組において、薬液処理及び純水処理が行われる間に処理
液の循環フィルタリングや温度調整を実行する点は実施
形態１（図１）と同様である。この実施形態３では、２
個の基板処理槽１のそれぞれで処理液ＱＡ又はＱＢによ
る薬液処理が施された後、引き続き軽く純水処理が行わ
れ、さらにリンス専用槽１で純水ＤＷによる純水処理が
行われる。これにより、各基板処理槽１で薬液処理と純
水処理を順次行う場合に比べて、強力にウエハＷをリン
スでき、純水処理の所要時間が短縮されてスループット
が向上する。FIG . 3 is a schematic system diagram of an immersion treatment apparatus according to the third embodiment of the present invention. This immersion processing apparatus is one in which one of the substrate processing tanks 1 in Embodiment 2 ( FIG. 2 ) is set as a rinse-only tank for pure water processing.
In combination, a point to execute the circulation filtering and temperature control of the processing liquid between the chemical treatment and the pure water process is performed the same as in Embodiment 1 (FIG. 1). In the third embodiment, 2
After the chemical solution treatment with the treatment solution Q A or Q B is performed in each of the individual substrate treatment tanks 1, light pure water treatment is continuously performed, and further pure water treatment with pure water D W is performed in the rinse dedicated tank 1. Be seen. As a result, the wafer W can be rinsed more strongly than in the case where the chemical solution treatment and the pure water treatment are sequentially performed in each substrate treatment tank 1, the time required for the pure water treatment is shortened, and the throughput is improved.
【００３８】[0038]
【発明の効果】請求項１及び請求項２の発明では、前記
のように構成され作用することから、基板処理槽からオ
ーバーフローした処理液（ＨＦの場合を含む。以下、同
じ）は、処理液回収弁及び処理液回収路を介して処理液
供給路に流入し、再び基板処理槽に循環して再利用でき
るので、処理液の消費量を大幅に減らすことができる。
また、単一の基板処理槽で薬液処理（ＨＦ処理を含む。
以下、同じ）と純水処理とを実行できるので、基板処理
装置の大型化を防止することができる。さらに、薬液処
理から純水処理への移行に際して、基板処理槽内に処理
液が入った状態で純水を供給してオーバーフローさせる
ことにより、処理液を純水に置き換えるので、基板は空
気に触れることなく、薬液処理から純水処理へ移行する
ことができる。これにより、基板表面に酸化皮膜が形成
されるのを防止できる。また、薬液処理及び純水処理が
行われる間に処理液はフィルタリングにより効果的にリ
フレッシュされる。According to the first and second aspects of the present invention, since the processing liquid overflowing from the substrate processing bath (including the case of HF; the same applies hereinafter) is the processing liquid because it is constructed and operates as described above. treatment liquid via the recovery valve and the treatment liquid recovery path
Since it flows into the supply path and is recycled to the substrate processing bath for reuse, the consumption of the processing liquid can be greatly reduced.
Further, chemical treatment (HF treatment is included in a single substrate treatment tank.
The same applies hereinafter) and deionized water treatment can be performed, so that it is possible to prevent the substrate processing apparatus from increasing in size. Further, when the chemical solution treatment is transferred to the pure water treatment, the treatment liquid is replaced with pure water by supplying the pure water with the treatment liquid contained in the substrate treatment tank to cause the substrate to come into contact with air. It is possible to shift from the chemical treatment to the pure water treatment. This can prevent the oxide film from being formed on the surface of the substrate. Further, the treatment liquid is effectively refreshed by filtering while the chemical liquid treatment and the pure water treatment are performed.
【図１】実施形態１に係る浸漬処理装置の概略系統図を
示す。FIG. 1 shows a schematic system diagram of an immersion treatment apparatus according to a first embodiment.
【図２】実施形態２に係る浸漬処理装置の概略系統図を
示す。FIG. 2 shows a schematic system diagram of an immersion treatment apparatus according to a second embodiment.
【図３】実施形態３に係る浸漬処理装置の概略系統図を
示す。FIG. 3 shows a schematic system diagram of an immersion treatment apparatus according to a third embodiment.
【図４】本発明の浸漬処理装置を適用した基板処理装置
の概略斜視図である。FIG. 4 is a substrate processing apparatus to which the immersion processing apparatus of the present invention is applied.
2 is a schematic perspective view of FIG .
【図５】同基板処理装置の概略平面図である。FIG. 5 is a schematic plan view of the substrate processing apparatus.
【図６】同基板処理装置の概略縦断面図である。FIG. 6 is a schematic vertical sectional view of the substrate processing apparatus.
【図７】従来技術に属する基板処理装置の概略平面図で
ある。FIG. 7 is a schematic plan view of a substrate processing apparatus according to a conventional technique .
【図８】従来例１に係る浸漬処理装置を示し、同図
（Ａ）は薬液処理の概略系統図、同図（Ｂ）は純水処理
の概略系統図である。FIG. 8 is a diagram showing an immersion treatment apparatus according to Conventional Example 1.
(A) is a schematic system diagram of chemical treatment, and (B) is pure water treatment.
2 is a schematic system diagram of FIG.
【図９】従来例２を示す浸漬処理装置の概略説明図であ
る。FIG. 9 is a schematic explanatory view of an immersion treatment apparatus showing Conventional Example 2 .
１…基板処理槽、３…純水供給路、６…処理液貯留容
器、７…処理液供給路、８…処理液導入弁、１５…圧送
ポンプ、２２…処理液回収路、２７…純水導入弁、４２
…排液路、４３…排液ドレン、４４…処理液回収弁、４
７…排液弁、ＤＷ…純水、ＱＡ〜ＱＣ…処理液、Ｗ…基
板。DESCRIPTION OF SYMBOLS 1 ... Substrate processing tank, 3 ... Pure water supply path, 6 ... Processing solution storage container, 7 ... Processing solution supply path, 8 ... Processing solution introduction valve, 15 ... Pressure pump, 22 ... Processing solution recovery path, 27 ... Pure water Introductory valve, 42
... Drainage channel, 43 ... Drainage drain, 44 ... Treatment liquid recovery valve, 4
7 ... drain valve, D W ... pure water, Q A to Q C ... treatment liquid, W ... substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大▲崎▼ 敏行 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番１ 大日本スクリーン製造株式会 社 野洲事業所内 (72)発明者 杉本 賢司 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番１ 大日本スクリーン製造株式会 社 野洲事業所内 (72)発明者 前川 直嗣 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番１ 大日本スクリーン製造株式会 社 野洲事業所内 (56)参考文献 特開 平５−21415（ＪＰ，Ａ) 特開 平５−190526（ＪＰ，Ａ) 特開 平７−22366（ＪＰ，Ａ) 特開 昭63−289819（ＪＰ，Ａ) 特開 昭62−281335（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Ousaki Toshiyuki Shiga Prefecture Yasu-gun Yasu-machi Oita Mikami Kuchinogawara 2426-1 Dainippon Screen Manufacturing Stock Association Company Yasu Works (72) Inventor Kenji Sugimoto Shiga Prefecture Yasu-gun Yasu-machi Oita Mikami Kuchinogawara 2426-1 Dainippon Screen Manufacturing Stock Association Company Yasu Works (72) Inventor Naoji Maekawa Shiga Prefecture Yasu-gun Yasu-machi Oita Mikami Kuchinogawara 2426-1 Dainippon Screen Manufacturing Stock Association Company Yasu Works (56) References JP-A-5-21415 (JP, A) JP-A-5-190526 (JP, A) JP 7-22366 (JP, A) JP 63-289819 (JP, A) JP 62-281335 (JP, A)
Claims (2)
理をなすオーバーフロー型の基板処理槽と、上記基板処
理槽に連結した処理液供給路と、上記処理液供給路に処
理液導入弁及び圧送ポンプを順に介して連通した処理液
貯留容器と、上記処理液供給路に純水導入弁を介して連
通した純水供給路と、上記基板処理槽よりオーバーフロ
ーした排液を排液ドレンに導出する排液路とを具備して
成る基板の浸漬処理装置において、 上記排液路を分岐して一方は上記排液ドレンに連通する
とともに、他方は上記処理液回収路として処理液回収弁
を介して上記処理液貯留容器に連通し、上記排液路から
上記排液ドレンへの接続と上記排液路から上記処理液貯
留容器への接続とを切り換える排液弁を設け、 上記処理液供給路の圧送ポンプと上記処理液導入弁との
間にフィルタを付設するとともに、上記処理液導入弁よ
りも下流側に上記純水供給路を連通し、 上記処理液供給路を、上記フィルタと純水供給路接続部
との間で分岐させて上記処理液回収路に連通させ、上記
処理液導入弁により上記基板処理槽への接続と上記処理
液回収路への接続とを切換可能とするとともに、 上記処理液回収路を、上記処理液供給路との連通部より
も下流側で分岐させて、上記処理液供給路の、上記圧送
ポンプよりも上流側に連通させ、上記処理液回収弁によ
り上記処理液貯留容器への接続と上記処理液供給路への
接続とを切換可能とし、 薬液処理では、上記処理液貯留容器内の処理液を上記処
理液供給路から上記基板処理槽に供給してオーバーフロ
ーさせ、上記排液路から上記処理液回収弁を介して上記
処理液供給路に流通させて上記基板処理槽に還流させ、 上記薬液処理の後で行われる純水処理では、純水を上記
純水供給路から上記基板処理槽に供給してオーバーフロ
ーさせ、上記排液路から上記排液弁を介して上記排液ド
レンに廃棄し、この純水処理では、圧送ポンプで汲み上
げた処理液を、上記処理液導入弁を介して上記処理液回
収路に流通させて上記処理液貯留容器に還流させ、 上記薬液処理から純水処理への移行に際しては、上記処
理液供給路から上記基板処理槽への処理液の供給を停止
し、続いて、上記基板処理槽に処理液を入れた状態で、
上記純水供給路から上記基板処理槽に純水を供給して処
理液をオーバーフローさせることにより、上記基板処理
槽内の処理液を純水に置き換える、ことを特徴とする基
板の浸漬処理装置。1. An overflow type substrate processing bath for immersing a substrate in a processing liquid for surface treatment of the substrate, a processing liquid supply passage connected to the substrate processing bath, and a processing liquid introduction into the processing liquid supply passage. A treatment liquid storage container that communicates with each other through a valve and a pressure pump, a pure water supply passage that communicates with the treatment liquid supply passage through a pure water introduction valve, and a drainage liquid that overflows the substrate treatment tank. in the immersion treatment device substrate formed by and a drainage path for deriving the, with one hand branched to the drains communicating with the upper Symbol drainage drain, while the treatment liquid recovered as the process liquid recovery path via a valve communicating with the processing liquid storage container, from the drains
Connection to the drainage drain and storage of the processing liquid from the drainage path.
A drain valve for switching between connection to the distilling container is provided, and a filter is attached between the pressure feed pump of the treatment liquid supply path and the treatment liquid introduction valve, and the pure liquid is provided downstream of the treatment liquid introduction valve. the water supply path communicated with the treatment liquid supply channel, is branched between the filter and the purified water supply channel connection portion is communicated with the above-described processing liquid recovery path, the
Connection to the above substrate processing bath by the processing liquid introduction valve and the above processing
The connection to the liquid recovery passage can be switched, and the processing liquid recovery passage is connected to the processing liquid supply passage through a communicating portion.
Is also branched on the downstream side, and the pressure feed of the processing liquid supply path is performed.
It should be connected to the upstream side of the pump and
Connection to the processing solution storage container and connection to the processing solution supply path
The connection can be switched, and in the chemical treatment, the treatment liquid in the treatment liquid storage container is supplied to the substrate treatment tank from the treatment liquid supply passage to overflow, and the treatment liquid recovery valve is passed from the drainage passage to the treatment liquid recovery valve. Above
In the pure water treatment which is circulated in the treatment liquid supply path and returned to the substrate treatment tank, and after the chemical solution treatment, pure water is supplied from the pure water supply passage to the substrate treatment tank to cause overflow, The waste liquid is discarded from the drainage passage through the drainage valve to the drainage drain, and in this pure water treatment, the treatment liquid pumped up by a pressure pump is circulated to the treatment liquid recovery passage through the treatment liquid introduction valve. To the processing liquid storage container, and during the transition from the chemical liquid processing to the pure water processing, the supply of the processing liquid from the processing liquid supply path to the substrate processing tank is stopped, and then the substrate processing tank With the treatment liquid in,
An apparatus for dipping a substrate, wherein pure water is supplied from the pure water supply path to the substrate processing tank to cause the processing liquid to overflow, thereby replacing the processing liquid in the substrate processing tank with pure water.
をなすオーバーフロー型の基板処理槽と、上記基板処理
槽に連結した処理液供給路と、上記処理液供給路に処理
液導入弁及び圧送ポンプを順に介して連通した処理液貯
留容器と、上記処理液供給路に純水導入弁を介して連通
した純水供給路と、上記基板処理槽よりオーバーフロー
した排液を排液ドレンに導出する排液路とを具備して成
る基板の浸漬処理装置において、 上記排液路を分岐して一方は上記排液ドレンに連通する
とともに、他方は上記処理液回収路として処理液回収弁
を介して上記処理液貯留容器に連通し、上記排液路から
上記排液ドレンへの接続と上記排液路から上記処理液貯
留容器への接続とを切り換える排液弁を設け、 上記処理液供給路の圧送ポンプと上記処理液導入弁との
間にフィルタを付設するとともに、上記処理液導入弁よ
りも下流側に上記純水供給路を連通し、 上記処理液供給路を、上記フィルタと純水供給路接続部
との間で分岐させて上記処理液回収路に連通させ、上記
処理液導入弁により上記基板処理槽への接続と上記処理
液回収路への接続とを切換可能とするとともに、 上記処理液回収路を、上記処理液供給路との連通部より
も下流側で分岐させて、上記処理液供給路の、上記圧送
ポンプよりも上流側に連通させ、上記処理液回収弁によ
り上記処理液貯留容器への接続と上記処理液供給路への
接続とを切換可能とし、 ＨＦ処理では、上記処理液貯留容器内のＨＦを上記処理
液供給路から上記基板処理槽に供給してオーバーフロー
させ、上記排液路から上記処理液回収弁を介して上記処
理液供給 路に流通させて上記基板処理槽に還流させ、 上記ＨＦ処理の後で行われる純水処理では、純水を上記
純水供給路から上記基板処理槽に供給してオーバーフロ
ーさせ、上記排液路から上記排液弁を介して上記排液ド
レンに廃棄し、この純水処理では、圧送ポンプで汲み上
げたＨＦを、上記処理液導入弁を介して上記処理液回収
路に流通させて上記処理液貯留容器に還流させ、 上記ＨＦ処理から純水処理への移行に際しては、上記処
理液供給路から上記基板処理槽へのＨＦの供給を停止
し、続いて、上記基板処理槽にＨＦを入れた状態で、上
記純水供給路から上記基板処理槽に純水を供給してＨＦ
をオーバーフローさせることにより、上記基板処理槽内
のＨＦを純水に置き換える、ことを特徴とする基板の浸
漬処理装置。2. An overflow type substrate processing bath for surface-treating a substrate by immersing the substrate in HF , a processing liquid supply passage connected to the substrate processing bath, and a processing liquid introduction valve in the processing liquid supply passage. And a treatment liquid storage container that communicates with each other through a pressure pump, a pure water supply passage that communicates with the treatment liquid supply passage through a pure water introduction valve, and a drainage liquid that overflows from the substrate treatment tank into a drainage drain. in the immersion treatment device substrate formed by and a drainage path for deriving, with one hand branched to the drains communicating with the upper Symbol drainage drain, the other is the process liquid recovery path as the processing liquid recovery valve Through the processing liquid storage container through the drainage path
Connection to the drainage drain and storage of the processing liquid from the drainage path.
A drain valve for switching between connection to the distilling container is provided, and a filter is attached between the pressure feed pump of the treatment liquid supply path and the treatment liquid introduction valve, and the pure liquid is provided downstream of the treatment liquid introduction valve. the water supply path communicated with the treatment liquid supply channel, is branched between the filter and the purified water supply channel connection portion is communicated with the above-described processing liquid recovery path, the
Connection to the above substrate processing bath by the processing liquid introduction valve and the above processing
The connection to the liquid recovery passage can be switched, and the processing liquid recovery passage is connected to the processing liquid supply passage through a communicating portion.
Is also branched on the downstream side, and the pressure feed of the processing liquid supply path is performed.
It should be connected to the upstream side of the pump and
Connection to the processing solution storage container and connection to the processing solution supply path
The connection can be switched, and in the HF processing , HF in the processing liquid storage container is supplied from the processing liquid supply passage to the substrate processing tank to cause overflow, and the drainage passage is passed through the processing liquid recovery valve. Above
Is circulated sense liquid supply path refluxed to the substrate treatment tank, pure water process performed after the HF treatment, pure water to overflow and supplied to the substrate processing tank from the pure water supply passage, the From the drainage passage, the waste water is discarded through the drainage valve to the drainage drain, and in this pure water treatment, HF pumped up by a pressure pump is circulated to the treatment liquid recovery passage through the treatment liquid introduction valve. When the HF treatment is returned to the treatment liquid storage container and the HF treatment is changed to the pure water treatment, the supply of HF from the treatment liquid supply passage to the substrate treatment tank is stopped, and then the HF treatment is performed in the substrate treatment tank. With pure water being supplied, pure water is supplied from the pure water supply path to the substrate processing bath to supply HF.
The substrate dipping processing apparatus is characterized in that HF in the substrate processing tank is replaced with pure water by overflowing the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23372399A JP3530426B2 (en) | 1993-08-06 | 1999-08-20 | Substrate immersion processing equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-215129 | 1993-08-06 | ||
| JP21512993 | 1993-08-06 | ||
| JP23372399A JP3530426B2 (en) | 1993-08-06 | 1999-08-20 | Substrate immersion processing equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06145939A Division JP3138901B2 (en) | 1993-08-06 | 1994-06-28 | Substrate immersion processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000058492A JP2000058492A (en) | 2000-02-25 |
| JP3530426B2 true JP3530426B2 (en) | 2004-05-24 |
Family
ID=26520692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23372399A Expired - Fee Related JP3530426B2 (en) | 1993-08-06 | 1999-08-20 | Substrate immersion processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3530426B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1130555B1 (en) | 2000-03-03 | 2009-11-18 | Konami Digital Entertainment Co., Ltd. | Remote, central monitoring system for game machines |
| JP2002278473A (en) * | 2001-03-21 | 2002-09-27 | Sony Corp | Method for manufacturing display panel |
| JP4248903B2 (en) | 2003-03-19 | 2009-04-02 | 大日本スクリーン製造株式会社 | High pressure processing apparatus and high pressure processing method |
| JP4248989B2 (en) * | 2003-10-10 | 2009-04-02 | 大日本スクリーン製造株式会社 | High pressure processing apparatus and high pressure processing method |
| JP4630881B2 (en) * | 2007-03-05 | 2011-02-09 | シャープ株式会社 | Substrate cleaning device |
| JP4940123B2 (en) | 2007-12-21 | 2012-05-30 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP5318670B2 (en) * | 2009-06-09 | 2013-10-16 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, program, and storage medium |
-
1999
- 1999-08-20 JP JP23372399A patent/JP3530426B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000058492A (en) | 2000-02-25 |
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