JPH08195374A - Cleaning device and its method - Google Patents

Abstract

PURPOSE: To enable a work such as a semiconductor wafer to be subjected to a surface treatment high in uniformity when the semiconductor wafer is chemically treated and rinsed in the same treating tank. CONSTITUTION: A chemicals discharge pipe 61 large in pipe diameter is connected to the base of a treating tank through the intermediary of a valve 62, a chemicals recovering vessel 63 is connected to the lower end of the chemicals discharge pipe 61 so as to reuse chemicals. On the other hand, a rinsings vessel 51 is provided above the processing tank, and feed pipes 52 large in pipe diameter are connected to the base of the rinsing liquid vessel 51 through the intermediary of a valve 53 each. Chemicals is quickly discharged out of the treating tank 3 through the chemicals discharge pipe 61 after a chemical treatment is finished, and then, for instance, pure water in the rinsing liquid vessel 5 is quickly fed into the treating tank 3 by opening the valves 53, whereby wafers W are reduced in exposure time to, for instance, 10 seconds or less so as to prevent their upper parts from being dried up.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device and a cleaning method.

[0002]

2. Description of the Related Art In the process of manufacturing semiconductor devices, particles on the surface of a semiconductor wafer (hereinafter referred to as "wafer"),
Cleaning equipment is used to remove contaminants such as organic contaminants and metallic impurities. Among them, the wet cleaning equipment can effectively remove the contamination, and batch processing is also possible with good throughput. Therefore, it is widely used.

In this type of cleaning apparatus, a wafer is subjected to a chemical treatment with ammonia, hydrofluoric acid, hydrochloric acid or the like in a chemical bath, and then rinsed in the rinse bath with, for example, pure water. With respect to the apparatus configuration, a set of a chemical solution tank and a rinse tank is arranged in series for each chemical solution, and a transfer system for sequentially transferring, for example, 50 wafers collectively to each tank is provided.

Recently, in order to reduce the size of the apparatus, a one-bath type cleaning apparatus in which the chemical solution tank and the rinse tank are made common and the treatment with the chemical solution and the rinsing are performed in the same tank is being studied. A conventional example of such a one-bath type cleaning device will be described with reference to FIG. 7. In the figure, reference numeral 1 is a processing tank, and a rectifying plate 11 is provided in the processing tank 1. First, a chemical solution such as a hydrofluoric acid solution is supplied into the processing tank 1,
It is circulated by the circulation path 13, and holding rods 14a to 14c
For example, 50 wafers W are held in parallel in the holder 14 having the above and are immersed in the chemical solution. Then, the circulation of the chemical liquid is stopped, the rinse liquid, for example, pure water is supplied from the rinse liquid supply path 15 into the processing bath 1, and the inside of the processing bath 1 is replaced with pure water while discharging the liquid from the drain pipe 16. I try to rinse. Va, Vb, Vc, and Vd are valves, P is a pump, and F is a filter.

[0005]

However, in the above method, since the chemical solution is replaced with pure water and discharged, the consumption amount of the chemical solution is large and the cost is increased. That is, it takes a long time for the specific resistance of the liquid to recover to the value of pure water, which hinders the improvement of throughput.

On the other hand, a method of discharging the chemical solution from the inside of the processing tank 1 and filling the pure water into the processing tank 1 through the rinse supply passage 15 after the treatment with the chemical solution has been studied, but in this case, the pure water is processed. Since it is supplied into the treatment tank 1 from the bottom of the tank 1 through a PFA (tetrafluoroeletylen-perfluoroalkyl vinyl ether copolymer) tube having an outer diameter of 3/4 inch, the amount of pure water supplied is at most 5
The limit is 0 liters / minute, and therefore, the pure water cannot be rapidly supplied. Therefore, the time from the start of discharging the chemical solution in the processing tank to the filling with the pure water is, for example, in the case of the processing tank for the 8-inch wafer W. Even at the shortest, it will take 20 to 25 seconds or more. As a result, the lower part of the wafer W is in contact with the hydrofluoric acid solution because it is wet, but the upper part is dried and the hydrofluoric acid solution is deficient, so that there is a wet part and a dry part. Therefore, there arises a problem that the etching process becomes uneven and the uniformity of the etching process becomes low. Such unevenness of the surface treatment occurs not only in the etching treatment with the hydrofluoric acid solution but also in other cleaning treatments.

The present invention has been made under such circumstances, and an object thereof is to provide a cleaning apparatus and a cleaning method capable of performing uniform surface treatment.

[0008]

According to a first aspect of the present invention, a plurality of substrates to be processed are vertically arranged in parallel in a processing tank, and are treated with a chemical solution in the processing tank, and then rinsed. In a cleaning device for rinsing with a liquid, after the treatment with the chemical liquid, a chemical liquid discharge portion for rapidly discharging the chemical liquid from the bottom of the processing tank, and after discharging the chemical liquid in the processing tank by the chemical liquid discharge portion, A first rinse liquid supply unit for rapidly supplying the rinse liquid from above the treatment tank, and after the rinse liquid is supplied into the treatment tank by the first rinse liquid supply unit, And a second rinse solution supply unit for replacing the rinse solution with a new rinse solution.

According to a second aspect of the present invention, a plurality of substrates to be processed are arranged vertically in parallel in a processing tank, and the substrates are processed with a chemical solution and then rinsed with a rinse solution. In the apparatus, a chemical liquid discharge part for rapidly discharging the chemical liquid from the bottom of the treatment tank, a recovery container for collecting the chemical liquid discharged from the chemical liquid discharge part, and a chemical liquid in the recovery container are circulated and filtered. A circulation filtration unit for
After discharging the chemical liquid in the processing tank by the chemical liquid replenishing unit and the chemical liquid discharging unit for making the concentration of the chemical liquid in the recovery container a predetermined concentration, for rapidly supplying the rinse liquid from above the processing bath. A first rinse liquid supply unit and a second rinse liquid supply unit for replacing the rinse liquid in the processing tank with a new rinse liquid after the rinse liquid is supplied into the processing tank by the first rinse liquid supply unit. A rinse liquid supply unit, a rinse liquid discharge unit for discharging the rinse liquid in the processing tank, and a chemical liquid for returning the chemical liquid in the recovery container to the processing tank after discharging the rinse liquid from the processing tank. And a return means.

According to a third aspect of the present invention, in the first or second aspect of the invention, the first rinse liquid supply unit is provided from the time when the chemical liquid is discharged from the processing tank by the chemical liquid discharge unit and a part of the substrate to be processed is exposed. Thus, the time until the rinsing liquid is supplied into the processing tank and the entire substrate to be processed is immersed is within 10 seconds.

The invention of claim 4 is the invention of claim 1, 2 or 3.
In the invention, the first rinse liquid supply section includes a rinse liquid container provided at a position higher than the treatment tank, and a rinse liquid for discharging the rinse liquid from a lower portion of the rinse liquid container and supplying the rinse liquid to the treatment tank. A liquid flow path and a valve for opening and closing the rinse liquid flow path are provided.

According to a fifth aspect of the present invention, a plurality of substrates to be processed are arranged vertically in parallel in a processing tank, and the substrates are processed with a chemical solution and then rinsed with a rinse solution. In the method, after the treatment with the chemical liquid, a step of rapidly discharging the chemical liquid from the bottom of the treatment tank to recover the chemical liquid, a step of rapidly supplying a rinse liquid into the treatment tank, and then a treatment tank A step of supplying a new rinse liquid to replace the liquid in the treatment tank with a new rinse liquid, a step of discharging the rinse liquid in the treatment tank next, and after that, the chemical liquid already collected and circulated and filtered is removed. The process of returning the rinse liquid to the processing tank is performed, and the rinse liquid is supplied into the processing tank from the time when the rinse liquid is discharged from the processing tank and a part of the substrate to be processed is exposed, and the entire substrate to be processed is immersed. It is characterized in that it takes less than 10 seconds

[0013]

After the substrate to be processed is treated with the chemical liquid in the treatment tank, the chemical liquid in the treatment tank is rapidly discharged by the chemical liquid discharge unit, and then from the first rinse liquid supply unit, for example, from the rinse liquid container above the treatment tank. The rinse liquid is rapidly supplied into the processing tank, and after a part of the substrate to be processed begins to be exposed due to the discharge of the chemical liquid,
The time until the entire substrate to be processed is immersed in the rinse liquid is suppressed to within 10 seconds, for example. Then, the rinse liquid is supplied from the first rinse liquid supply unit into the processing tank to rinse the substrate to be processed. Therefore, since the chemical solution is replaced with the rinse solution in a short time, it is possible to prevent the upper part of the substrate to be processed from being dried and to perform a uniform surface treatment. Then, the chemical liquid discharged from the processing tank is temporarily stored in the recovery container and reused for the next cleaning process of the substrate to be processed, whereby the consumption amount of the chemical liquid can be reduced. Also, compared with the conventional method in which the chemical solution in the processing tank is gradually replaced with pure water, the chemical efficiency and pure water are exchanged all at once, so the rinse efficiency is dramatically increased, the processing time is shortened, and the amount of pure water used is reduced. Will be possible.

[0014]

EXAMPLE A cleaning apparatus according to an example of the present invention will be described. First, regarding the entire cleaning device including the transport system, etc.
Briefly referring to FIG. 1, the entire apparatus is configured such that a substrate A for receiving a substrate to be processed before cleaning processing, for example, a wafer in a cassette unit, a cleaning processing unit B for cleaning the wafer, and a cleaning processing unit B after the cleaning processing. It is composed of three zones including a carry-out section C for taking out wafers in cassette units.

In the carrying-in section A, a cassette C containing, for example, 25 wafers is once carried into the standby section 21 from the outside by the cassette carrying means 20, and then carried to the loader section 22, which is not visible in the figure. The wafer chuck transfers the wafers in the cassette C to a dedicated wafer holder. In the cleaning processing section B, for example, three wafer transfer mechanisms R1 to R3 are provided along a line connecting the carry-in section A and the carry-out section C.
The wafer transfer mechanisms R1 to R3 are provided with a holder transfer means for transferring a wafer holder holding a wafer into the apparatus. Further, in order from the loading section A side, a cleaning / drying tank T1 for cleaning and drying the holder transporting means 23 of the wafer transporting mechanism R1, three processing tanks T2 to T4, and a holder transporting means 24 of the wafer transporting mechanism R3 are provided. Cleaning / drying tank T5 for cleaning and drying, and wafer drying tank T for steam-drying wafers
6 is provided.

The processing tanks T2 to T4 are configured to be cleaned with a cleaning processing solution and rinsed with, for example, pure water. For example, 50 wafers are collectively held by a dedicated holder described later and the wafers are held. A cleaning process is sequentially performed in the processing tanks T2 to T4 by the transport mechanisms R1 to R3. A cleaning / drying line 25 for cleaning and drying the empty cassette C after the wafer is taken out by the wafer chuck is provided above the cleaning processing section B. The cassette C to the cleaning / drying line is provided. Is supplied by the loader unit 22 and the elevating mechanism 26.

FIG. 2 shows an overview of the above-mentioned wafer holder and processing tank. The wafer holder 3 has a pair of end plates 30.
It has the 1st holding rod 31, the 2nd holding rod 32, and the 3rd holding rod 33 which were passed between a and 30b, and hold | maintains the peripheral part of the wafer W to these holding rods 31-33. Holding groove 3
For example, 50 4 are formed in parallel. End plate 30a,
Each of the upper end portions of 30b has a supported portion 35 that is horizontally bent.
a and 35b are formed. The holder transporting means has a pair of arms 27a and 27b, for example, as shown in FIG. 2, and supports the lower surfaces of the supported portions 34a and 34b of the wafer holder 3 in the above-described apparatuses T2 to T4. It is configured to be transported to.

On the other hand, the three processing tanks T2 to T4 may have the same structure, and the respective processing tanks 4 (T2 to T4) and the apparatus configuration relating thereto will be described with reference to FIGS. 2 to 4. The processing tank 4 is formed, for example, in a rectangular shape whose bottom edge is inclined, and a triangular notch 41 for overflow is formed in the upper edge portion, and outside the upper edge portion of the processing tank 4. A receiving tank 42 for receiving the overflowed liquid is provided. A first rinse liquid supply unit 5 for rapidly supplying a rinse liquid, for example, pure water, into the processing bath 3 is provided above the processing bath 4, and the first rinse liquid supply unit 5 is, for example, The elevating means 50a such as a ball screw can be elevated between an upper position which does not interfere with the transportation of the wafer holder 3 and a position immediately above the processing bath 4 (position in FIG. 2). 50b is a guide rod.

The first rinse liquid supply section 5 includes a rinse liquid container 51 for storing the rinse liquid, and the rinse liquid container 51.
Multiple on the bottom of the box, for example, 2 in front and 2 in total, 4 in total
The rinsing liquid container 51 has a supply pipe 52 and a valve 53 that opens and closes the rinsing liquid supply path. The rinsing liquid container 51 is filled with rinsing liquid from a rinsing liquid supply source (not shown). Has become. Further, as shown in FIG. 4, a chemical liquid supply unit 60 is provided above the processing tank 4 at a position where it does not interfere with the holding and conveying means.

On the other hand, at the bottom of the processing tank 4, there is provided a chemical solution discharging section 6 for rapidly discharging the chemical solution in the processing tank 4, and the chemical solution discharging section 6 is connected to the front and rear two locations at the bottom of the processing tank 4. And a valve 62 provided near the upper end opening of the discharge pipe 61.
The lower end side of the discharge pipe 61 is connected to a chemical liquid recovery container 63. The chemical solution discharge unit 6 and the first rinse solution supply unit 5 rapidly discharge the chemical solution in the processing tank 4 and rapidly supply the rinse solution to shorten the exposure time of the wafer W. Also, the number and the diameter of the discharge pipes 61 are set so that the exposure time of the wafer W is within 10 seconds, for example, as described later in detail according to the size of the wafer W, the number of processed wafers, and the like.

Between the bottom of the processing tank 4 and the receiving tank 42, a valve V1, a pump P, a filter F, a temperature controller T, valves V2 and V3 are inserted in this order from the receiving tank 42 side. A first chemical liquid circulation passage 71 forming a filtration portion is provided, and a valve 4 forming a second rinse liquid supply portion is interposed between the valve V3 of the chemical liquid circulation passage 71 and the bottom portion of the processing tank 4. The mounted rinse liquid supply path 72 is branched.
Therefore, a part of the chemical liquid circulation passage 71 also serves as the rinse liquid supply passage 72.

A drain pipe 73, in which a valve V5 is interposed, for discharging the rinse liquid in the processing tank 4 after the rinse is completed is branched from between the valves V2 and V3 in the chemical liquid circulation path 71. . Further, in the liquid circulation path 71, the receiving tank 42 side of the pump P, the temperature controller H and the valve V
The branch passages 74a and 74b in which the valves V6 and V7 are respectively inserted from between 2 and 2, and these branch passages 74
a and 74b are connected to the bottom and the upper part of the recovery container 63, respectively, and a second chemical liquid circulation path 74 for circulating the chemical liquid in the recovery container 63 is provided by the branch paths 74a and 74b and a part of the chemical liquid circulation path 71. Is configured.

At the bottom of the receiving tank 42, a drain pipe 75 having a valve V8 for discharging the rinse liquid overflowing from the processing tank 4 is connected. The rinse liquid supply path 7
2. The chemical liquid circulation paths 71 and 74 are made of, for example, PFA (tetrafluoroeletylen-perfluoroalkyl vinyl ether copolymer) tubes having an outer diameter of 3/4 inch. In addition, in the recovery container 63, a chemical solution replenishing unit 64 for supplementing the chemical solution to bring the concentration of the recovered chemical solution to a predetermined value
Is connected.

Between the bottom of the processing tank and the wafer holder 3, a straightening plate 44 having a slit 43 extending in the front-rear direction is provided and faces the supply port of the rinse liquid supply passage 72. At the position, a diffusion plate 4 having a diameter substantially the same as that of the supply port is provided.
5 (see FIG. 3) are provided. Note that the connection positions of the chemical liquid circulation path 71 and the drain pipe 75 to the processing tank 4 and the receiving tank 42 in FIG. 4 are shown for convenience, although they are not shown in FIG. 3, and the chemical liquid circulation path 71 is actually shown in FIG. It is connected to the center of the bottom of the processing tank 4 in the left-right direction.

Next, the operation of the above embodiment will be described. First, in the loader unit 22 shown in FIG. 1, the wafer chuck described above takes out, for example, 25 wafers from each of the two cassettes, and transfers 50 wafers to the wafer holder 3. On the other hand, a chemical solution, such as a hydrofluoric acid solution, is supplied from the chemical solution supply unit 60 into the processing tank 4, the valves V1, V2, V3 are opened and the other valves are closed, and the chemical solution is circulated by the pump P. At this time, the chemical liquid is adjusted to a predetermined temperature by the temperature controller H. Then, the wafer holder 3 is transferred into the processing bath 4 by the arms 27a and 27b of the holder transfer means, and as shown in FIGS. 3 and 4, for example, 50 wafers W are immersed in the chemical solution,
For example, the oxide film on the surface of the wafer W is etched with the hydrofluoric acid solution. When the wafer holder 3 is transferred, the first rinse liquid supply unit 5 is in the raised position and then descends.

Thereafter, the valve 62 of the chemical liquid discharge section 6 is opened to rapidly discharge the chemical liquid in the processing tank 4 through the discharge pipe 61. In this example, the discharged chemical liquid is collected in the recovery container 63. Subsequently, the valves V1 to V3 and 62 are closed, and the valve 53 of the first rinse liquid supply section is opened to open the rinse liquid container 51.
The rinsing liquid therein is naturally dropped through the supply pipe 52 and rapidly supplied into the processing tank 4 until it becomes full. In this case, the time from when the liquid surface level of the chemical liquid is lowered and a part of the wafer W is exposed to when the rinse liquid is supplied and the liquid surface level is raised and the entire wafer W is immersed is, for example, 10 times. Within 10 seconds (including 10 seconds).

After that, the valve V4 is opened, and a rinse liquid such as pure water is supplied from the bottom of the processing tank 4 through a rinse liquid supply passage 72 from a rinse liquid supply source (not shown). The rinse liquid is straightened by the straightening plate 43 and rises, and the rinse liquid overflowing from the processing tank 4 is discharged from the drain pipe 75. Here, in the previous step, the rinse liquid is rapidly filled in the processing tank 4,
At this time, the chemical liquid adhering to the inner surface of the processing tank 4, the wafer W, the holder 3, or the like is mixed. Therefore, when pure water is newly supplied from the bottom of the treatment tank 4, pure water of low purity is replaced by new pure water, and the specific resistance of the pure water in the treatment tank 4 is restored to the original value of pure water. To do.

On the other hand, while this rinse is being performed, the valve V
6 and V7 are opened, the chemical solution in the recovery container 63 is circulated through the circulation path 74 and kept at a predetermined temperature by the temperature controller H, and the chemical solution is replenished from the chemical solution replenishing section 64 to have a predetermined chemical solution concentration. Keep at the value. For replenishment of this chemical,
For example, the concentration of the chemical liquid in the recovery container 63 is measured, and the replenishment amount is calculated. Then, after the specific resistance of the liquid in the processing bath 4 is restored to the value of pure water, the valve V4 is closed and the valves V3 and V5 are opened to discharge the rinse liquid in the processing bath 4 from the drain pipe 73. After the cleaning process of the wafer W is completed in this way,
The first rinse liquid supply unit 5 is raised and the wafer holder 3 in the processing tank 4 is taken out by the holder transfer means.

Subsequently, the valves V5 and V7 are closed and the valve V2 is closed.
Is opened and the chemical in the recovery container 63 is sent from the branch pipe 74a through the pump P through the circulation path 71, and is supplied into the processing tank 4 from the bottom of the processing tank 4. Thereafter, the valve V6 is closed and the valve V1 is opened to circulate the chemical liquid in the processing bath 3 through the chemical liquid circulation path 71, and the next chemical treatment of the wafer W is performed. When the chemical solution from the recovery container 63 is insufficient or the chemical concentration is insufficient, the shortage is replenished from the chemical solution supply unit 60.

According to the above-described embodiment, since the rinse liquid container 51 is provided above the processing bath 4 so that the rinse liquid, for example, pure water, can be dropped therein, the pure water is rapidly supplied into the processing bath 4. can do. Therefore, after the processing of the wafer W with the chemical liquid is completed, the chemical liquid is rapidly discharged from the bottom portion of the processing tank 4 through the chemical liquid discharge portion 6, and then the rinse liquid container 5
By rapidly supplying pure water from No. 1, the chemical solution in the processing tank 4 can be replaced with the rinse solution in a short time, for example, the exposure time of the wafer W described above is within 10 seconds. Therefore, if the dry area of the wafer W is completely eliminated or if there is, it is not so wide,
Moreover, since the existence time of the dry area is short, the wafer W
The uniformity of the surface treatment, for example, etching, in the plane of is increased. Then, the chemical liquid discharged from the processing tank 4 is once stored in the recovery container 63 and used again for the treatment of the chemical liquid, so that the consumption amount of the chemical liquid can be reduced, the rinsing efficiency can be further increased, and the pure water consumption can be reduced. And the throughput is improved.

Here, the present inventor uses a test apparatus similar to that of the above-described embodiment to provide a flow rate adjusting valve in the rinse solution supply pipe 52 of the first rinse solution supply section, and to set the exposure time of the wafer W as described above. Was set to 8 seconds, 10 seconds, and 20 seconds (rounded to the nearest whole number), and a 5% hydrofluoric acid solution was used as the chemical, and the state of the surface of 50 wafers was observed. The uniform surface treatment was performed on all the wafers W in 10 seconds or less, but in the case of 20 seconds, a slightly lower etching amount was confirmed in the upper portion of each wafer W. Therefore, it is preferable that the exposure time of the wafer W, that is, the time from the time when a part of the wafer W is exposed by discharging the chemical liquid to the time when the entire wafer W is immersed by supplying the rinse liquid is preferably 10 seconds or less.

If the first rinse liquid supply unit 5 can be moved up and down, the rinse liquid can be dropped from a position close to the processing tank 4 so that the rinse liquid is less likely to splash, which is preferable.
It may be fixed above the processing tank 4 by securing a space necessary for the transportation. And again, the first rinse liquid supply unit 5
As shown in FIGS. 5 and 6, the wafer holder 3 is provided at an upper position where it does not interfere with the wafer holder 3 when it is conveyed, and the rinse liquid is configured to drop into the receiving tank 42 so as not to directly contact the wafer W. Good. Further, in order to hold the wafer in the processing tank 4, instead of holding the wafer in the wafer holder and transporting the wafer together with the wafer holder, the wafer is transferred to a holding means provided in advance in the processing tank 4. You may

In the above, the present invention is not limited to the case of etching an oxide film with a hydrofluoric acid solution, but for example, the case of etching a nitride film with a phosphoric acid solution or the case of etching aluminum with a mixed solution of phosphoric acid, acetic acid and nitric acid. Can also be applied to. In addition, as other cleaning processing,
When removing particles with APM solution (ammonia + hydrogen peroxide solution + pure water), when cleaning metal contamination with HPM solution (hydrochloric acid + hydrogen peroxide solution + pure water), or with SPM solution (sulfuric acid + peroxide) For example, the organic matter of the resist film may be removed with (hydrogen water). The substrate to be processed may be a liquid crystal substrate or a printed circuit board.

[0034]

As described above, according to the present invention, when the treatment with the chemical liquid and the rinse with the rinse liquid are performed in the common treatment tank, the chemical liquid is rapidly discharged from the treatment tank after the treatment with the chemical liquid, and then rinsed. The liquid is rapidly supplied into the processing tank,
Since the exposure time of the substrate to be processed is shortened in this manner, the surface treatment can be performed on the substrate to be processed with high uniformity. Further, the consumption amount of the chemical liquid can be reduced by once collecting the chemical liquid discharged from the processing tank in the recovery container and then reusing it. Further, since the rinse efficiency is increased, the pure water consumption is reduced and the throughput is improved.

[Brief description of drawings]

FIG. 1 is a perspective view showing an overall configuration of a cleaning device according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a wafer holder, a rinse liquid container, and a processing tank used in an embodiment of the present invention.

FIG. 3 is a vertical sectional side view showing a main part of the embodiment of the present invention.

FIG. 4 is a vertical sectional front view showing a main part of an embodiment of the present invention.

FIG. 5 is a vertical cross-sectional side view showing a main part of another embodiment of the present invention.

FIG. 6 is a vertical sectional front view showing a main part of another embodiment of the present invention.

FIG. 7 is a vertical sectional front view showing a conventional cleaning device.

[Explanation of symbols]

3 Wafer Holder 4 Processing Tank 42 Receiving Tank 5 First Rinse Liquid Supply Section 51 Rinse Solution Container 52 Rinse Solution Supply Path 53 Valve 6 Chemical Solution Discharge Section 61 Chemical Solution Discharge Pipe 62 Valve 63 Recovery Container 71, 74 Chemical Solution Circulation Path 72 Second Rinse solution supply pipe W wafer that forms the rinse solution supply section of No. 2

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takayuki Tojima 1 2381 Kitashitajo Kitashitajo, Fujii-cho, Nirasaki-shi, Yamanashi Tokyo Electron Kyushu Co., Ltd. Yamanashi Office

Claims (5)

[Claims] 1. A cleaning apparatus in which a plurality of substrates to be processed are vertically arranged in parallel in a processing tank, treated with a chemical solution in the processing tank, and then rinsed with a rinse solution, After the treatment with the chemical solution, the chemical solution discharging section for rapidly discharging the chemical solution from the bottom of the processing tank, and the chemical solution in the processing tank is discharged by the chemical solution discharging section, and then the rinse solution is rapidly discharged from above the processing tank. A first rinse liquid supply part for supplying the liquid, and a first rinse liquid supply part for replacing the rinse liquid in the processing bath with a new rinse liquid after the rinse liquid is supplied into the processing bath. And a second rinse liquid supply part of the cleaning device. 2. A cleaning apparatus in which a plurality of substrates to be processed are vertically arranged in parallel in a processing tank, treated with a chemical solution in the processing vessel, and then rinsed with a rinse solution. A chemical liquid discharge part for rapidly discharging the chemical liquid from the bottom of the tank, a collection container for collecting the chemical liquid discharged from the chemical liquid discharge part, and a circulation filtration part for filtering the chemical liquid in the collection container while circulating it. A chemical solution replenishing unit for adjusting the concentration of the chemical solution in the recovery container to a predetermined concentration; and after the chemical solution in the processing tank is discharged by the chemical solution discharging section, a rinse solution is rapidly supplied from above the processing tank. And a first rinse liquid supply unit for replacing the rinse liquid in the processing bath with a new rinse liquid after the rinse liquid is supplied into the processing bath by the first rinse liquid supply unit. 2 rinse liquid supply section, A rinse liquid discharge part for discharging the rinse liquid in the treatment tank; and a chemical liquid returning means for returning the chemical liquid in the recovery container to the treatment tank after discharging the rinse liquid from the treatment tank. A cleaning device characterized by the above. 3. The substrate to be processed by supplying the rinse liquid into the processing tank by the first rinse liquid supply unit from the point in time when the chemical liquid is discharged from the processing tank by the chemical liquid discharging unit and a part of the substrate to be processed is exposed. The cleaning apparatus according to claim 1 or 2, wherein the time until the time when the whole is immersed is within 10 seconds. 4. The first rinse liquid supply part is for rinsing liquid container provided at a position higher than the processing tank, and for discharging the rinse liquid from the lower part of the rinse liquid container and supplying it to the processing tank. The rinse liquid flow path and a valve for opening and closing the rinse liquid flow path are provided.
The cleaning device described. 5. A cleaning method in which a plurality of substrates to be processed are vertically arranged in parallel in a processing tank, treated with a chemical solution in the processing tank, and then rinsed with a rinse liquid, After the treatment by, the step of rapidly discharging the chemical solution from the bottom of the treatment tank to recover the chemical solution, the step of rapidly supplying the rinse solution into the treatment tank, and then the new rinse solution in the treatment tank. A step of supplying and replacing the liquid in the processing tank with a new rinse liquid, a step of discharging the rinse liquid in the processing tank next, and then returning the chemical liquid already collected and circulated and filtered to the processing tank. Including the process, the time from when the rinse liquid is discharged from the processing tank and a part of the substrate to be processed is exposed to when the rinse liquid is supplied to the processing tank and the entire substrate to be processed is immersed. A cleaning method characterized by being within 10 seconds.