JP5994687B2 - Cleaning tank treatment method - Google Patents
Cleaning tank treatment method Download PDFInfo
- Publication number
- JP5994687B2 JP5994687B2 JP2013048758A JP2013048758A JP5994687B2 JP 5994687 B2 JP5994687 B2 JP 5994687B2 JP 2013048758 A JP2013048758 A JP 2013048758A JP 2013048758 A JP2013048758 A JP 2013048758A JP 5994687 B2 JP5994687 B2 JP 5994687B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- water
- tank
- cleaning tank
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004140 cleaning Methods 0.000 title claims description 153
- 238000000034 method Methods 0.000 title claims description 27
- 239000007788 liquid Substances 0.000 claims description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 239000002253 acid Substances 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 21
- 238000005406 washing Methods 0.000 claims description 13
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- 238000003672 processing method Methods 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 35
- 239000002245 particle Substances 0.000 description 27
- 238000011109 contamination Methods 0.000 description 15
- 238000005498 polishing Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
本発明は、半導体ウェーハ洗浄工程に使用されるウェーハ洗浄槽の処理方法に関するものであり、さらに詳しくは酸系洗浄液を用いる洗浄工程で使用されるウェーハ洗浄槽の処理方法に関するものである。 The present invention relates to a processing method for a wafer cleaning tank used in a semiconductor wafer cleaning process, and more particularly to a processing method for a wafer cleaning tank used in a cleaning process using an acid-based cleaning liquid.
半導体ウェーハの製造工程は、主に、単結晶インゴットを円板状にスライスしウェーハの原型を作るスライス工程と、このウェーハを平坦化するためのラッピング工程、加工歪を除去するためのエッチング工程、更には鏡面化のためのポリッシング工程という手順を経て、少なくともその片面(主面)が鏡面仕上げされたウェーハに加工されるウェーハ加工プロセスと、その後、前記ウェーハの鏡面に微細な電気回路を形成するデバイス製造プロセスに分かれている。 The manufacturing process of a semiconductor wafer mainly includes a slicing process for slicing a single crystal ingot into a disk shape to make a prototype of the wafer, a lapping process for flattening the wafer, an etching process for removing processing distortion, Furthermore, a wafer processing process in which at least one surface (main surface) is processed into a mirror-finished wafer through a procedure called a polishing process for mirroring, and then a fine electric circuit is formed on the mirror surface of the wafer. Divided into device manufacturing process.
上記の単結晶インゴットから半導体デバイスを製造するまでの工程において、酸化膜耐圧等の半導体素子の電気特性を劣化させる欠陥の存在や、有機物及び重金属等による汚染は極力抑える必要があり、ウェーハ加工プロセスでは、このような欠陥や汚染を確認するための検査手段や、汚染された金属を除去するための洗浄工程などが行われている(特許文献1)。 In the process from manufacturing a single crystal ingot to a semiconductor device, it is necessary to minimize the presence of defects that degrade the electrical characteristics of semiconductor elements such as oxide film breakdown voltage, and contamination by organic substances and heavy metals. Then, an inspection means for confirming such defects and contamination, a cleaning process for removing the contaminated metal, and the like are performed (Patent Document 1).
半導体ウェーハの洗浄工程では、アンモニア水、過酸化水素水、及び超純水の混合洗浄液(以下、SC1(Standard Cleaning 1))によって有機物等の不純物の汚染除去洗浄を行い、塩酸、過酸化水素水、及び超純水の混合洗浄液(以下、SC2(Standard Cleaning 2))又はフッ化水素水(以下、HF)によって金属不純物の除去洗浄を行うRCA洗浄といわれる洗浄プロセスが多く用いられている。また、HFによる洗浄で酸化膜の除去、重金属の除去を行った場合、汚染によるパーティクルの再付着防止のためHF洗浄後に通常はオゾン水による酸化を行っている。 In the semiconductor wafer cleaning process, impurities such as organic substances are decontaminated and cleaned using a mixed cleaning solution of ammonia water, hydrogen peroxide water, and ultrapure water (hereinafter referred to as SC1 (Standard Cleaning 1)), and hydrochloric acid and hydrogen peroxide water. In addition, a cleaning process called RCA cleaning in which metal impurities are removed and cleaned with ultra pure water mixed cleaning liquid (hereinafter referred to as SC2 (Standard Cleaning 2)) or hydrogen fluoride water (hereinafter referred to as HF) is often used. Further, when the oxide film and heavy metal are removed by cleaning with HF, oxidation with ozone water is usually performed after HF cleaning to prevent reattachment of particles due to contamination.
通常、RCA洗浄では、SC1による汚染除去洗浄を行った後に、SC2やHFによる洗浄槽を用いた酸洗浄で金属不純物の除去を行っているが、長期間ウェーハ洗浄を実施していると、SC1による洗浄で除去しきれなかった汚染が酸洗浄用の洗浄槽、即ち、SC2槽やHF槽に持ち込まれて蓄積していく。 Normally, in RCA cleaning, metal impurities are removed by acid cleaning using a cleaning tank with SC2 or HF after decontamination cleaning with SC1, but when wafer cleaning is performed for a long time, SC1 Contamination that could not be removed by the cleaning by is brought into an acid cleaning cleaning tank, that is, an SC2 tank or an HF tank, and accumulated.
しかし、酸洗浄はSC1等のアルカリでないと溶解しにくい汚染の除去能力が低いため、洗浄槽に汚染が蓄積していき、結果としてパーティクルレベルが増加してくる。このような中で、現状ではパーティクルレベルの回復のため、洗浄槽の純水フラッシングや酸系洗浄液による共洗い、ダミーランニングを実施しているが、パーティクルレベルが回復するまでにはかなりの時間を要していた。 However, since acid cleaning has a low ability to remove contamination that is difficult to dissolve unless it is an alkali such as SC1, contamination accumulates in the cleaning tank, resulting in an increase in particle level. Under these circumstances, in order to recover the particle level, flushing with pure water in the washing tank, co-washing with an acid-based cleaning solution, and dummy running are implemented. However, a considerable amount of time is required until the particle level recovers. It was necessary.
本発明は、上記事情に鑑みなされたものであって、酸系洗浄液を用いる洗浄工程で使用する洗浄槽の有機物等による汚染をすばやく除去し、安定したパーティクルレベルでウェーハの洗浄を実施できる洗浄槽を得ることができる洗浄槽の処理方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and is a cleaning tank that can quickly remove contamination by organic substances, etc., in a cleaning tank used in a cleaning process using an acid-based cleaning liquid and can perform wafer cleaning at a stable particle level. It is an object of the present invention to provide a treatment method for a cleaning tank that can obtain the above.
上記課題を解決するために、本発明は、
半導体ウェーハ製造工程の中の酸系洗浄液を用いる洗浄工程で使用される洗浄槽の処理方法であって、前記洗浄槽の使用前にアルカリ系洗浄液によって前記洗浄槽の洗浄を行う洗浄槽の処理方法を提供する。
In order to solve the above problems, the present invention provides:
A processing method of a cleaning tank used in a cleaning process using an acid cleaning liquid in a semiconductor wafer manufacturing process, wherein the cleaning tank is cleaned with an alkaline cleaning liquid before use of the cleaning tank I will provide a.
このような洗浄槽の処理方法であれば、酸系洗浄液を用いる洗浄工程で使用する洗浄槽の有機物等による汚染をすばやく除去し、安定したパーティクルレベルでウェーハの洗浄を実施できる洗浄槽を得ることができる。 With such a cleaning tank processing method, it is possible to quickly remove contamination by organic matter, etc. in a cleaning tank used in a cleaning process using an acid-based cleaning solution and obtain a cleaning tank capable of cleaning a wafer at a stable particle level. Can do.
このとき、前記酸系洗浄液として、塩酸、過酸化水素水、及び水からなる水溶液又はフッ化水素水を用いることが好ましい。 At this time, it is preferable to use an aqueous solution or hydrogen fluoride water composed of hydrochloric acid, hydrogen peroxide solution, and water as the acid cleaning solution.
本発明は、このような汎用的に用いられている酸系洗浄液を用いる洗浄工程で使用する洗浄槽に適用することができる。 The present invention can be applied to a cleaning tank used in a cleaning process using such a general-purpose acid cleaning solution.
このとき、前記アルカリ系洗浄液として、アンモニア水、過酸化水素水、及び水からなる水溶液を用いることが好ましい。 At this time, it is preferable to use an aqueous solution composed of ammonia water, hydrogen peroxide water, and water as the alkaline cleaning liquid.
このようなアルカリ系洗浄液であれば、洗浄槽の有機物等による汚染を効率良く除去することができる。 With such an alkaline cleaning liquid, contamination due to organic substances or the like in the cleaning tank can be efficiently removed.
本発明の洗浄槽の処理方法であれば、酸系洗浄液を用いる洗浄工程で使用する洗浄槽のダミーランニング等を行うことなく有機物等による汚染をすばやく除去し、安定したパーティクルレベルでウェーハの洗浄を実施できる洗浄槽を得ることができる。 If it is the processing method of the cleaning tank of the present invention, it is possible to quickly remove contamination by organic substances without performing dummy running of the cleaning tank used in the cleaning process using the acid-based cleaning liquid, and to clean the wafer at a stable particle level. A washing tank that can be carried out can be obtained.
酸系洗浄液を扱う洗浄槽では、アルカリに接する機会が少ないため、アルカリでないと溶解しにくい有機物等による汚染は除去することができず蓄積していってしまう。このように、汚染が蓄積することでパーティクルレベルが増加し、洗浄槽としての使用が困難になる。本発明者らは、鋭意検討したところ、使用前の洗浄槽をアルカリ系洗浄液で処理することで有機物等の汚染をすばやく除去し、パーティクルレベルを低下させ、安定したパーティクルレベルでウェーハの洗浄を行うことができることを見出し、本発明を完成させた。 In a washing tank that handles an acid-based cleaning solution, there are few opportunities to come into contact with alkali, and therefore contamination by organic substances that are difficult to dissolve without alkali cannot be removed and accumulated. Thus, the accumulation of contamination increases the particle level, making it difficult to use as a cleaning tank. As a result of diligent investigation, the inventors of the present invention quickly remove contamination such as organic matter by treating the cleaning tank before use with an alkaline cleaning solution, lower the particle level, and clean the wafer at a stable particle level. The present invention has been completed.
即ち、本発明は、
半導体ウェーハ製造工程の中の酸系洗浄液を用いる洗浄工程で使用される洗浄槽の処理方法であって、前記洗浄槽の使用前にアルカリ系洗浄液によって前記洗浄槽の洗浄を行う洗浄槽の処理方法を提供する。
That is, the present invention
A processing method of a cleaning tank used in a cleaning process using an acid cleaning liquid in a semiconductor wafer manufacturing process, wherein the cleaning tank is cleaned with an alkaline cleaning liquid before use of the cleaning tank I will provide a.
本発明では使用前の洗浄槽をアルカリ系洗浄液で洗浄処理をする。このうち、使用前とは、即ち、酸系洗浄液を使用する前、例えば新しい洗浄槽を使う場合や、洗浄液を交換するごと、または一定期間洗浄槽を使用した後に次の新しい洗浄液を使用する前を意味する。 In the present invention, the cleaning tank before use is cleaned with an alkaline cleaning solution. Among these, before using, that is, before using an acid cleaning liquid, for example, when using a new cleaning tank, every time the cleaning liquid is replaced, or after using a cleaning tank for a certain period of time, before using the next new cleaning liquid. Means.
酸系洗浄液としては、特に限定されるものではないが、一般的に半導体ウェーハの洗浄に使用されている塩酸、過酸化水素水、及び水からなる水溶液(SC2)又はフッ化水素水(HF)を用いることができる。また、必要に応じて、酸系洗浄液を用いた後の洗浄槽を水等によりリンスしてもよい。酸系洗浄液の温度や洗浄時間及び洗浄後のリンス時間等は、用いる酸系洗浄液の濃度や組成により適宜決定する。 Although it does not specifically limit as an acid system cleaning liquid, The aqueous solution (SC2) or hydrogen fluoride water (HF) which consists of hydrochloric acid, hydrogen peroxide water, and water generally used for the cleaning of a semiconductor wafer Can be used. Moreover, you may rinse the washing tank after using an acid type washing | cleaning liquid with water etc. as needed. The temperature of the acid cleaning solution, the cleaning time, the rinsing time after cleaning, and the like are appropriately determined according to the concentration and composition of the acid cleaning solution used.
洗浄槽の材質としては、特に限定されるものではなく、酸系洗浄液の種類に応じて適宜選択することができ、例えば、酸系洗浄液としてHFを用いる場合は、PTFE製のものを使用することができ、酸系洗浄液としてSC2を用いる場合は、石英製のものを使用することができる。 The material of the cleaning tank is not particularly limited, and can be appropriately selected according to the type of the acid cleaning liquid. For example, when HF is used as the acid cleaning liquid, a PTFE material should be used. When SC2 is used as the acid-based cleaning solution, a quartz product can be used.
また、使用前の洗浄槽の処理に用いるアルカリ系洗浄液としては、特に限定されるものではないが、アンモニア水、過酸化水素水、及び水からなる水溶液(SC1)、NaOH、KOHの水溶液等が使用でき、このうち、半導体ウェーハの洗浄に一般的に用いられている点及び洗浄槽の洗浄効率等の観点からSC1を使用することが好ましい。また、必要に応じて、アルカリ系洗浄液で処理した後の洗浄槽を水等によりリンスしてもよい。アルカリ系洗浄液の温度や洗浄時間及び処理後のリンス時間等は、用いるアルカリ系洗浄液の濃度や組成により適宜決定する。 Further, the alkaline cleaning liquid used for the treatment of the cleaning tank before use is not particularly limited, but an aqueous solution (SC1) composed of ammonia water, hydrogen peroxide water and water, an aqueous solution of NaOH, KOH, and the like. Among these, it is preferable to use SC1 from the viewpoint of the point generally used for cleaning the semiconductor wafer and the cleaning efficiency of the cleaning tank. Moreover, you may rinse the washing tank after processing with an alkaline cleaning liquid with water etc. as needed. The temperature of the alkaline cleaning liquid, the cleaning time, the rinsing time after the treatment, and the like are appropriately determined depending on the concentration and composition of the alkaline cleaning liquid used.
アルカリ系洗浄液として、SC1を用いる場合、混合比としては、特に限定されるものではなく、例えば、アンモニア水(28wt%):過酸化水素水(30wt%):水が1:1:10となる混合比を例示できる。また、アンモニア水:過酸化水素水:水の混合比は1:1:5〜20の範囲であることが好ましい。 When SC1 is used as the alkaline cleaning liquid, the mixing ratio is not particularly limited. For example, ammonia water (28 wt%): hydrogen peroxide water (30 wt%): water is 1: 1: 10. A mixing ratio can be illustrated. The mixing ratio of aqueous ammonia: hydrogen peroxide: water is preferably in the range of 1: 1: 5-20.
このような洗浄槽の処理方法であれば、ダミーランニング等の工程を行うことなく、酸系洗浄液を用いる洗浄工程で使用する洗浄槽の有機物等による汚染をすばやくかつ効率的に除去し、安定したパーティクルレベルでウェーハの洗浄を実施できる洗浄槽を得ることができる。従って、半導体ウェーハ、特にシリコンウェーハの品質を向上できるとともに、洗浄槽のスループットを向上し、生産性を上げることができる。 With such a treatment method of the washing tank, without performing a process such as dummy running, the contamination by the organic matter in the washing tank used in the washing process using the acid-based washing liquid is quickly and efficiently removed, and is stable. A cleaning tank capable of cleaning wafers at the particle level can be obtained. Therefore, the quality of the semiconductor wafer, particularly the silicon wafer can be improved, the throughput of the cleaning tank can be improved, and the productivity can be increased.
以下、実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれらに限定されるものではない。
尚、洗浄は鏡面研磨後の300mmシリコンウェーハ4枚を1バッチとして処理し、10バッチごとに洗浄後のウェーハのパーティクル(LPD(Light Point Defect))数(≧41nm)をパーティクルカウンター(日立ハイテク製LS−6800)で測定した。
EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
For cleaning, four 300 mm silicon wafers after mirror polishing are processed as one batch, and the number of wafer particles (LPD (Light Point Defect)) (≧ 41 nm) after cleaning is counted as a particle counter (manufactured by Hitachi High-Tech). LS-6800).
(比較例1)
鏡面研磨後の研磨剤等を除去する洗浄において、まずSC1による洗浄を行い、超純水でリンスを行った後、HF洗浄、オゾン水による洗浄を連続して行い、その後洗浄が完了したシリコンウェーハを乾燥させる。使用したSC1洗浄液はアンモニア水(28wt%):過酸化水素水(30wt%):水の混合比を1:1:10、洗浄液の温度を70℃とした。HF濃度は1.5wt%、オゾン水の濃度は10ppmとした。また、HF槽にはPTFE製の洗浄槽を用いた。結果を図3に示す。
70バッチまではパーティクルレベルは15個前後で推移したが、80バッチを過ぎるとパーティクルレベルが増加し、100バッチでは36.5個となった。ここで、HF洗浄液を廃棄し純水でフラッシッグを行った後に新しいHF洗浄液を作製して、研磨工程を通っていないきれいなウェーハでダミーランニングを10バッチ行った後に鏡面研磨後のウェーハを洗浄してパーティクルレベルの確認を行ったところ29.5個であった。その後さらにきれいなウェーハでダミーランニングを行うことによって、パーティクルレベルは改善していき、60バッチを過ぎたところで、ようやく洗浄開始と同等レベルの15.0個となった。
(Comparative Example 1)
In the cleaning to remove the polishing agent after mirror polishing, first cleaning with SC1, rinsing with ultrapure water, then HF cleaning, cleaning with ozone water successively, and then the cleaning completed silicon wafer Dry. The SC1 cleaning liquid used was a mixture ratio of ammonia water (28 wt%): hydrogen peroxide water (30 wt%): water of 1: 1: 10, and the temperature of the cleaning liquid was 70 ° C. The HF concentration was 1.5 wt% and the ozone water concentration was 10 ppm. Moreover, the washing tank made from PTFE was used for the HF tank. The results are shown in FIG.
Up to 70 batches, the particle level changed at around 15. However, after 80 batches, the particle level increased, and in 100 batches, it reached 36.5. Here, after discarding the HF cleaning solution and flushing with pure water, a new HF cleaning solution is prepared, and after 10 batches of dummy running with a clean wafer that has not passed the polishing process, the mirror-polished wafer is cleaned. The particle level was confirmed to be 29.5. After that, by performing dummy running with a clean wafer, the particle level improved, and after 60 batches, it finally reached 15.0, the same level as the start of cleaning.
(実施例1)
比較例1と同様に鏡面研磨後の300mmシリコンウェーハを100バッチ洗浄してパーティクルが39.0個になった後に、HF洗浄液を廃棄して純水でフラッシングを行った後にアルカリ系洗浄液(アンモニア水(28wt%):過酸化水素水(30wt%):水=1:1:10、80℃)で30分処理した後、廃棄して純水でフラッシングして新しいHF洗浄液を作製して鏡面研磨後のウェーハ洗浄を続けた。結果を図1に示す。
この結果、パーティクルレベルは洗浄槽の洗浄後1バッチ目で17.0個と洗浄開始と同等レベルまで改善し、その後も研磨後のウェーハの洗浄を続けたところ、15個前後で推移した。
Example 1
As in Comparative Example 1, 100 batches of mirror-polished 300 mm silicon wafers were cleaned to reach 39.0 particles, then the HF cleaning solution was discarded and flushed with pure water, followed by alkaline cleaning solution (ammonia water). (28 wt%): Hydrogen peroxide solution (30 wt%): Water = 1: 1: 10, 80 ° C.) for 30 minutes, then discarded and flushed with pure water to prepare a new HF cleaning solution and mirror polishing The subsequent wafer cleaning was continued. The results are shown in FIG.
As a result, the particle level improved to 17.0 in the first batch after the cleaning of the cleaning tank to the same level as the start of cleaning. After that, the wafer after polishing was continuously cleaned.
(実施例2)
鏡面研磨後の研磨剤等を除去する洗浄において、まずSC1による洗浄を行い、超純水でリンスを行った後、SC2による洗浄を連続して行い、最後に洗浄が完了したシリコンウェーハを乾燥させる。使用したSC1洗浄液はアンモニア水:過酸化水素水:水の混合比を1:1:10、洗浄液の温度を70℃とした。SC2洗浄液は塩酸:過酸化水素水:水の混合比を1:1:100、洗浄液の温度を80℃とした。また、SC2槽には石英製の洗浄槽を用いた。結果を図2に示す。
洗浄開始から70バッチまではパーティクルレベルは12個前後で推移したが、80バッチを過ぎるとパーティクルレベルが増加し、100バッチでは34.0個となった。SC2薬液を廃棄して純水でフラッシングを行った後にアルカリ水溶液(アンモニア水(28wt%):過酸化水素水(30wt%):水=1:1:10、80℃)で30分処理した後、廃棄して純水でフラッシングして新しいSC2洗浄液を作製して研磨後のウェーハ洗浄を続けた。この結果、パーティクルレベルは洗浄槽の洗浄後1バッチ目で13.5個と洗浄開始と同等レベルまで改善し、その後も鏡面研磨後のウェーハの洗浄を続けたところ、13個前後で推移した。
(Example 2)
In the cleaning for removing the polishing agent after mirror polishing, the cleaning is first performed by SC1, rinsed with ultrapure water, then continuously cleaned by SC2, and finally the silicon wafer that has been cleaned is dried. . The SC1 cleaning solution used had a mixing ratio of ammonia water: hydrogen peroxide solution: water of 1: 1: 10, and the cleaning solution temperature was 70.degree. In the SC2 cleaning liquid, the mixing ratio of hydrochloric acid: hydrogen peroxide: water was 1: 1: 100, and the temperature of the cleaning liquid was 80.degree. A quartz cleaning tank was used as the SC2 tank. The results are shown in FIG.
From the start of cleaning up to 70 batches, the particle level changed at around 12, but after 80 batches the particle level increased and in 100 batches it reached 34.0. After the SC2 chemical solution was discarded and flushed with pure water, it was treated with an alkaline aqueous solution (ammonia water (28 wt%): hydrogen peroxide water (30 wt%): water = 1: 1: 10, 80 ° C.) for 30 minutes. Then, it was discarded and flushed with pure water to prepare a new SC2 cleaning solution, followed by wafer cleaning after polishing. As a result, the particle level improved to 13.5 in the first batch after cleaning in the cleaning tank to the same level as the start of cleaning, and after that, the wafer after mirror polishing continued to be cleaned, and remained around 13.
実施例1及び実施例2では、酸系洗浄液を扱う洗浄槽をアルカリ系洗浄液で処理することで、パーティクルレベルが30個以上となった洗浄槽であっても、1回のアルカリ系洗浄によってすぐに洗浄工程開始時と同等のパーティクルレベルまで低下させることができ、その後も安定したウェーハの洗浄を行うことができた。しかし、比較例1では、パーティクルレベルが30個以上となった洗浄槽を、洗浄工程開始時と同等のパーティクルレベルまで戻すのに、ダミーランニングを60バッチ分必要とした。 In Example 1 and Example 2, the cleaning tank that handles the acid-based cleaning liquid is treated with the alkaline cleaning liquid, so that even if the cleaning tank has a particle level of 30 or more, it is immediately performed by one alkaline cleaning. In addition, the particle level could be reduced to the same level as at the start of the cleaning process, and the wafer could be cleaned stably thereafter. However, in Comparative Example 1, 60 batches of dummy running were required to return the cleaning tank having the particle level of 30 or more to a particle level equivalent to that at the start of the cleaning process.
このように、本発明の洗浄槽の処理方法で酸系洗浄液を用いる洗浄槽を処理すれば、ダミーランニング等の工程を行うことなく、洗浄槽についた有機物等による汚染をすばやく除去することができ、安定したパーティクルレベルの洗浄を実施できる洗浄槽を得ることが明らかになった。 As described above, if the cleaning tank using the acid cleaning liquid is processed by the processing method of the cleaning tank of the present invention, it is possible to quickly remove the contamination due to the organic matter or the like attached to the cleaning tank without performing a process such as dummy running. It was revealed that a cleaning tank capable of performing stable particle level cleaning was obtained.
尚、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
Claims (3)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013048758A JP5994687B2 (en) | 2013-03-12 | 2013-03-12 | Cleaning tank treatment method |
PCT/JP2014/000621 WO2014141580A1 (en) | 2013-03-12 | 2014-02-06 | Method for treating washing tank |
TW103105485A TW201440907A (en) | 2013-03-12 | 2014-02-19 | Method for treating washing tank |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013048758A JP5994687B2 (en) | 2013-03-12 | 2013-03-12 | Cleaning tank treatment method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014175574A JP2014175574A (en) | 2014-09-22 |
JP5994687B2 true JP5994687B2 (en) | 2016-09-21 |
Family
ID=51536265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013048758A Active JP5994687B2 (en) | 2013-03-12 | 2013-03-12 | Cleaning tank treatment method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5994687B2 (en) |
TW (1) | TW201440907A (en) |
WO (1) | WO2014141580A1 (en) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0645305A (en) * | 1992-07-22 | 1994-02-18 | Toshiba Corp | Semiconductor substrate surface processing apparatus |
JP2739419B2 (en) * | 1992-09-25 | 1998-04-15 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
JP3138901B2 (en) * | 1993-08-06 | 2001-02-26 | 大日本スクリーン製造株式会社 | Substrate immersion processing equipment |
JP3623284B2 (en) * | 1994-08-01 | 2005-02-23 | 東京エレクトロン株式会社 | Cleaning apparatus and control method thereof |
JPH09199468A (en) * | 1996-01-12 | 1997-07-31 | Tokyo Electron Ltd | Processing method and device |
JP3473662B2 (en) * | 1996-10-09 | 2003-12-08 | 三菱住友シリコン株式会社 | Wet cleaning equipment |
JP2000091294A (en) * | 1998-09-09 | 2000-03-31 | Dainippon Screen Mfg Co Ltd | Wafer treatment device |
JP3620577B2 (en) * | 1999-05-14 | 2005-02-16 | 栗田工業株式会社 | Cleaning method for ultrapure water production system |
JP3846838B2 (en) * | 2000-03-17 | 2006-11-15 | 株式会社トクヤマ | Cleaning method for high purity alkaline chemical handling equipment |
JP2003282520A (en) * | 2002-03-22 | 2003-10-03 | Sanyo Electric Co Ltd | Cleaning method of vessel and method for manufacturing solar battery |
US9370802B2 (en) * | 2007-03-30 | 2016-06-21 | Kurita Water Industries Ltd. | Cleaning and sterilizing method for ultrapure water manufacturing system |
JP5076164B2 (en) * | 2007-09-20 | 2012-11-21 | 富士通セミコンダクター株式会社 | Cleaning method for semiconductor manufacturing equipment |
JP5318670B2 (en) * | 2009-06-09 | 2013-10-16 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, program, and storage medium |
JP5768513B2 (en) * | 2011-06-07 | 2015-08-26 | 富士通セミコンダクター株式会社 | Substrate processing method and semiconductor device manufacturing method |
-
2013
- 2013-03-12 JP JP2013048758A patent/JP5994687B2/en active Active
-
2014
- 2014-02-06 WO PCT/JP2014/000621 patent/WO2014141580A1/en active Application Filing
- 2014-02-19 TW TW103105485A patent/TW201440907A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW201440907A (en) | 2014-11-01 |
WO2014141580A1 (en) | 2014-09-18 |
JP2014175574A (en) | 2014-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101774843B1 (en) | Method for cleaning semiconductor wafer | |
JP4613744B2 (en) | Cleaning method of silicon wafer | |
JP2008166795A (en) | Method for cleaning silicon wafer | |
TWI520197B (en) | Method of cleaning semiconductor wafers | |
JP2006080501A (en) | Cleaning solution and method of cleaning semiconductor substrate | |
CN112928017A (en) | Cleaning method for effectively removing metal on surface of silicon wafer | |
WO2013179569A1 (en) | Method for cleaning semiconductor wafer | |
JP6729632B2 (en) | Silicon wafer cleaning method | |
JPH10256211A (en) | Cleaning method for semiconductor substrate | |
KR20080075508A (en) | Method for grinding surface of semiconductor wafer and method for manufacturing semiconductor wafer | |
JP4857738B2 (en) | Semiconductor wafer cleaning method and manufacturing method | |
JP5994687B2 (en) | Cleaning tank treatment method | |
TWI615896B (en) | 矽 Wafer manufacturing method | |
JPH09321009A (en) | Method for manufacturing semiconductor device | |
JP6206173B2 (en) | Semiconductor wafer cleaning method | |
JP2002100599A (en) | Washing method for silicon wafer | |
JP2007123383A (en) | Method of manufacturing and cleaning semiconductor wafer | |
KR100914606B1 (en) | Method for manufacturing gate oxide film on semiconductor wafer by wet process | |
JP4351497B2 (en) | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | |
KR102109893B1 (en) | Bonded wafer manufacturing method | |
JP2013243219A (en) | Method for cleaning semiconductor wafer | |
KR20140091327A (en) | Method for cleaning wafer | |
JP6024216B2 (en) | Cleaning method for sapphire material | |
JP2001284309A (en) | Treatment method of container | |
JP2005210075A (en) | Cleaning method of semiconductor wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150223 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160726 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160808 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5994687 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |