JPH0750713B2 - 半導体ウェーハの熱処理方法 - Google Patents

半導体ウェーハの熱処理方法

Info

Publication number
JPH0750713B2
JPH0750713B2 JP2250226A JP25022690A JPH0750713B2 JP H0750713 B2 JPH0750713 B2 JP H0750713B2 JP 2250226 A JP2250226 A JP 2250226A JP 25022690 A JP25022690 A JP 25022690A JP H0750713 B2 JPH0750713 B2 JP H0750713B2
Authority
JP
Japan
Prior art keywords
heat treatment
oxygen
δoi
thermal donor
donor concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2250226A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04130732A (ja
Inventor
純輔 冨岡
哲郎 赤城
史朗 芳野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP2250226A priority Critical patent/JPH0750713B2/ja
Priority to PCT/JP1991/001259 priority patent/WO1992005579A1/ja
Priority to DE69131252T priority patent/DE69131252T2/de
Priority to US08/030,356 priority patent/US5385115A/en
Priority to EP91916605A priority patent/EP0550750B1/en
Publication of JPH04130732A publication Critical patent/JPH04130732A/ja
Publication of JPH0750713B2 publication Critical patent/JPH0750713B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2250226A 1990-09-21 1990-09-21 半導体ウェーハの熱処理方法 Expired - Lifetime JPH0750713B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2250226A JPH0750713B2 (ja) 1990-09-21 1990-09-21 半導体ウェーハの熱処理方法
PCT/JP1991/001259 WO1992005579A1 (fr) 1990-09-21 1991-09-20 Procede de traitement thermique de tranches de semi-conducteurs
DE69131252T DE69131252T2 (de) 1990-09-21 1991-09-20 Thermische behandlungsmethode für halbleiterscheiben
US08/030,356 US5385115A (en) 1990-09-21 1991-09-20 Semiconductor wafer heat treatment method
EP91916605A EP0550750B1 (en) 1990-09-21 1991-09-20 Semiconductor wafer heat treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2250226A JPH0750713B2 (ja) 1990-09-21 1990-09-21 半導体ウェーハの熱処理方法

Publications (2)

Publication Number Publication Date
JPH04130732A JPH04130732A (ja) 1992-05-01
JPH0750713B2 true JPH0750713B2 (ja) 1995-05-31

Family

ID=17204718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2250226A Expired - Lifetime JPH0750713B2 (ja) 1990-09-21 1990-09-21 半導体ウェーハの熱処理方法

Country Status (5)

Country Link
US (1) US5385115A (ref)
EP (1) EP0550750B1 (ref)
JP (1) JPH0750713B2 (ref)
DE (1) DE69131252T2 (ref)
WO (1) WO1992005579A1 (ref)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3011982B2 (ja) * 1990-09-14 2000-02-21 コマツ電子金属株式会社 半導体装置の製造方法
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
JP3232168B2 (ja) * 1993-07-02 2001-11-26 三菱電機株式会社 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
KR100240023B1 (ko) * 1996-11-29 2000-01-15 윤종용 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼
DE69908965T2 (de) * 1998-10-14 2004-05-13 Memc Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
TWI290182B (en) 2004-01-27 2007-11-21 Sumco Techxiv Corp Method for predicting precipitation behavior of oxygen in silicon single crystal, determining production parameter thereof, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal
CN101228301A (zh) * 2005-05-19 2008-07-23 Memc电子材料有限公司 高电阻率硅结构和用于制备该结构的方法
FR2964459B1 (fr) * 2010-09-02 2012-09-28 Commissariat Energie Atomique Procede de cartographie de la concentration en oxygene
US20150294868A1 (en) * 2014-04-15 2015-10-15 Infineon Technologies Ag Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms
JP6716344B2 (ja) * 2016-06-01 2020-07-01 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
JP6878188B2 (ja) * 2017-07-26 2021-05-26 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの抵抗率測定方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
JPS583374B2 (ja) * 1977-06-15 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶の処理方法
FR2435818A1 (fr) * 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs
FR2460479A1 (fr) * 1979-06-29 1981-01-23 Ibm France Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski
JPS5680139A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5830137A (ja) * 1981-08-18 1983-02-22 Toshiba Corp ウエ−ハの製造方法
JPS6066827A (ja) * 1983-09-24 1985-04-17 Mitsubishi Metal Corp シリコンウエハ−中への結晶欠陥導入制御法
DE3473971D1 (en) * 1984-06-20 1988-10-13 Ibm Method of standardization and stabilization of semiconductor wafers
US4622082A (en) * 1984-06-25 1986-11-11 Monsanto Company Conditioned semiconductor substrates
US5066599A (en) * 1989-07-27 1991-11-19 Fujitsu Limited Silicon crystal oxygen evaluation method using fourier transform infrared spectroscopy (ftir) and semiconductor device fabrication method using the same
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration

Also Published As

Publication number Publication date
US5385115A (en) 1995-01-31
EP0550750B1 (en) 1999-05-19
EP0550750A1 (en) 1993-07-14
DE69131252T2 (de) 2000-02-24
DE69131252D1 (de) 1999-06-24
EP0550750A4 (ref) 1994-01-19
WO1992005579A1 (fr) 1992-04-02
JPH04130732A (ja) 1992-05-01

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