JPH07193141A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH07193141A
JPH07193141A JP5348543A JP34854393A JPH07193141A JP H07193141 A JPH07193141 A JP H07193141A JP 5348543 A JP5348543 A JP 5348543A JP 34854393 A JP34854393 A JP 34854393A JP H07193141 A JPH07193141 A JP H07193141A
Authority
JP
Japan
Prior art keywords
memory cell
type
layer
trenches
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5348543A
Other languages
English (en)
Japanese (ja)
Inventor
Hisatoku Misawa
久徳 三澤
Hiroaki Tsunoda
弘昭 角田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5348543A priority Critical patent/JPH07193141A/ja
Priority to KR1019940036226A priority patent/KR950021603A/ko
Publication of JPH07193141A publication Critical patent/JPH07193141A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP5348543A 1993-12-27 1993-12-27 半導体記憶装置 Pending JPH07193141A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5348543A JPH07193141A (ja) 1993-12-27 1993-12-27 半導体記憶装置
KR1019940036226A KR950021603A (ko) 1993-12-27 1994-12-23 반도체 기억장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5348543A JPH07193141A (ja) 1993-12-27 1993-12-27 半導体記憶装置

Publications (1)

Publication Number Publication Date
JPH07193141A true JPH07193141A (ja) 1995-07-28

Family

ID=18397723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5348543A Pending JPH07193141A (ja) 1993-12-27 1993-12-27 半導体記憶装置

Country Status (2)

Country Link
JP (1) JPH07193141A (ko)
KR (1) KR950021603A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998015007A1 (de) * 1996-09-30 1998-04-09 Siemens Aktiengesellschaft Integrierte halbleiterspeicheranordnung mit 'buried-plate-elektrode'
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
KR100499395B1 (ko) * 2001-02-06 2005-07-07 매그나칩 반도체 유한회사 반도체 장치의 캐패시터 구조 및 그 제조방법
CN103021956A (zh) * 2012-12-24 2013-04-03 上海宏力半导体制造有限公司 分栅式快闪存储器的pip电容及制备方法
KR20180115999A (ko) * 2017-04-14 2018-10-24 포항공과대학교 산학협력단 다중 레벨의 전하 저장이 가능한 반도체 소자

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998015007A1 (de) * 1996-09-30 1998-04-09 Siemens Aktiengesellschaft Integrierte halbleiterspeicheranordnung mit 'buried-plate-elektrode'
KR100499395B1 (ko) * 2001-02-06 2005-07-07 매그나칩 반도체 유한회사 반도체 장치의 캐패시터 구조 및 그 제조방법
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
CN103021956A (zh) * 2012-12-24 2013-04-03 上海宏力半导体制造有限公司 分栅式快闪存储器的pip电容及制备方法
KR20180115999A (ko) * 2017-04-14 2018-10-24 포항공과대학교 산학협력단 다중 레벨의 전하 저장이 가능한 반도체 소자

Also Published As

Publication number Publication date
KR950021603A (ko) 1995-07-26

Similar Documents

Publication Publication Date Title
JP3431734B2 (ja) Ｓｏｉ形電界効果トランジスタおよびその製造方法
US5376814A (en) Method of constructing reduced size highly integrated static random access memory with double vertical channel structure
US20020096702A1 (en) Semiconductor memory device
KR0133921B1 (ko) 반도체 장치
US8618600B2 (en) Integrated circuit including a buried wiring line
JP3272979B2 (ja) 半導体装置
US11935828B2 (en) Integrated filler capacitor cell device and corresponding manufacturing method
JP2528794B2 (ja) ラツチアツプ保護回路付き集積回路
JPH07193141A (ja) 半導体記憶装置
KR100517219B1 (ko) 동적이득메모리셀을갖는dram셀장치및그의제조방법
JPH0277155A (ja) 半導体装置及びその製造方法
JPH065713B2 (ja) 半導体集積回路装置
US5300800A (en) Low leakage substrate plate DRAM cell
JPS62248248A (ja) 半導体記憶装置
KR19990011235A (ko) 반도체 기억 소자
EP0194682A2 (en) Semiconductor memory device
JPH05243281A (ja) 半導体装置及びその製造方法
JPS6351667A (ja) 半導体記憶装置
JP2941327B2 (ja) Ｍｏｓ型半導体装置
JPS58182863A (ja) 半導体装置
KR900007233B1 (ko) 반도체장치
JP2705146B2 (ja) Ｍｏｓ型半導体装置
JPS61231753A (ja) Ｍｉｓ型ダイナミツクランダムアクセスメモリ装置
JP2666335B2 (ja) 半導体メモリ装置の製造方法
JPH0740592B2 (ja) 半導体メモリ