JPH06326051A - オーミック電極及びその形成方法 - Google Patents

オーミック電極及びその形成方法

Info

Publication number
JPH06326051A
JPH06326051A JP5136708A JP13670893A JPH06326051A JP H06326051 A JPH06326051 A JP H06326051A JP 5136708 A JP5136708 A JP 5136708A JP 13670893 A JP13670893 A JP 13670893A JP H06326051 A JPH06326051 A JP H06326051A
Authority
JP
Japan
Prior art keywords
metal layer
layer
compound semiconductor
ohmic electrode
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5136708A
Other languages
English (en)
Japanese (ja)
Inventor
Toshimasa Kobayashi
俊雅 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5136708A priority Critical patent/JPH06326051A/ja
Priority to DE69415210T priority patent/DE69415210T2/de
Priority to EP94106991A priority patent/EP0625801B1/en
Priority to TW083104224A priority patent/TW281779B/zh
Priority to MYPI94001183A priority patent/MY111096A/en
Priority to US08/242,430 priority patent/US5387549A/en
Publication of JPH06326051A publication Critical patent/JPH06326051A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP5136708A 1993-05-14 1993-05-14 オーミック電極及びその形成方法 Pending JPH06326051A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP5136708A JPH06326051A (ja) 1993-05-14 1993-05-14 オーミック電極及びその形成方法
DE69415210T DE69415210T2 (de) 1993-05-14 1994-05-04 Verfahren zur Herstellung einer ohmschen Elektrode
EP94106991A EP0625801B1 (en) 1993-05-14 1994-05-04 Process for fabricating an ohmic electrode
TW083104224A TW281779B (enExample) 1993-05-14 1994-05-10
MYPI94001183A MY111096A (en) 1993-05-14 1994-05-11 Ohmic electrode and process for fabricating the same
US08/242,430 US5387549A (en) 1993-05-14 1994-05-13 Process for fabricating ohmic contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5136708A JPH06326051A (ja) 1993-05-14 1993-05-14 オーミック電極及びその形成方法

Publications (1)

Publication Number Publication Date
JPH06326051A true JPH06326051A (ja) 1994-11-25

Family

ID=15181636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5136708A Pending JPH06326051A (ja) 1993-05-14 1993-05-14 オーミック電極及びその形成方法

Country Status (6)

Country Link
US (1) US5387549A (enExample)
EP (1) EP0625801B1 (enExample)
JP (1) JPH06326051A (enExample)
DE (1) DE69415210T2 (enExample)
MY (1) MY111096A (enExample)
TW (1) TW281779B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode
US5646069A (en) * 1995-06-07 1997-07-08 Hughes Aircraft Company Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
JPH11274468A (ja) * 1998-03-25 1999-10-08 Sony Corp オーミック電極およびその形成方法ならびにオーミック電極形成用積層体
JP6206159B2 (ja) 2013-12-17 2017-10-04 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624928A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method of semiconductor
DE3011952C2 (de) * 1980-03-27 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
US4662060A (en) * 1985-12-13 1987-05-05 Allied Corporation Method of fabricating semiconductor device having low resistance non-alloyed contact layer
US4794444A (en) * 1986-04-10 1988-12-27 General Electric Company Ohmic contact and method for making same

Also Published As

Publication number Publication date
MY111096A (en) 1999-08-30
DE69415210T2 (de) 1999-06-24
EP0625801B1 (en) 1998-12-16
US5387549A (en) 1995-02-07
EP0625801A1 (en) 1994-11-23
DE69415210D1 (de) 1999-01-28
TW281779B (enExample) 1996-07-21

Similar Documents

Publication Publication Date Title
JP2786952B2 (ja) 窒化ガリウム系化合物半導体発光素子およびその製造方法
US4186410A (en) Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
JP2967743B2 (ja) ｎ型窒化ガリウム系半導体のコンタクト電極及びその形成方法
US4188710A (en) Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
US6821875B2 (en) Low area metal contacts for photovoltaic devices
JP2002057321A (ja) 化合物半導体装置及びその製造方法
US4593307A (en) High temperature stable ohmic contact to gallium arsenide
TW565933B (en) Method of forming ohmic electrode
JP4494567B2 (ja) ｎ型窒化ガリウム系化合物半導体層への電極形成方法
EP0272303A1 (en) Method for fabricating devices in iii-v semiconductor substrates and devices formed thereby
JP2565655B2 (ja) 低抵抗化合物
JP3812366B2 (ja) Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JPH06326051A (ja) オーミック電極及びその形成方法
US20040262621A1 (en) Bonding pad for gallium nitride-based light-emitting devices
JPH06188524A (ja) オーミック電極及びその形成方法並びに発光素子
JP2000299479A (ja) ショットキーダイオードおよびその製造方法
JP2000277455A (ja) オーミック電極およびその製造方法
JPH0831767A (ja) 電極構造の製造方法
JPH0945635A (ja) 半導体装置の製造方法，及び半導体装置
JP2000150417A (ja) 炭化珪素半導体の熱処理方法及び炭化珪素半導体装置の製造方法
Berthoud Aluminum alloying in silicon integrated circuits
JPH01166556A (ja) ｎ型ＧａＡｓオーム性電極およびその形成方法
JP2929084B2 (ja) 化合物半導体低接触抵抗電極の形成方法
JPS5845832B2 (ja) キンゾク−ハンドウタイセイリユウセイセツゴウノ セイホウ
JPH11220119A (ja) オーミック電極およびその製造方法