TW281779B - - Google Patents
Info
- Publication number
- TW281779B TW281779B TW083104224A TW83104224A TW281779B TW 281779 B TW281779 B TW 281779B TW 083104224 A TW083104224 A TW 083104224A TW 83104224 A TW83104224 A TW 83104224A TW 281779 B TW281779 B TW 281779B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5136708A JPH06326051A (ja) | 1993-05-14 | 1993-05-14 | オーミック電極及びその形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW281779B true TW281779B (enExample) | 1996-07-21 |
Family
ID=15181636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083104224A TW281779B (enExample) | 1993-05-14 | 1994-05-10 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5387549A (enExample) |
| EP (1) | EP0625801B1 (enExample) |
| JP (1) | JPH06326051A (enExample) |
| DE (1) | DE69415210T2 (enExample) |
| MY (1) | MY111096A (enExample) |
| TW (1) | TW281779B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5924002A (en) * | 1994-12-22 | 1999-07-13 | Sony Corporation | Method of manufacturing a semiconductor device having ohmic electrode |
| US5646069A (en) * | 1995-06-07 | 1997-07-08 | Hughes Aircraft Company | Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts |
| JPH11274468A (ja) * | 1998-03-25 | 1999-10-08 | Sony Corp | オーミック電極およびその形成方法ならびにオーミック電極形成用積層体 |
| JP6206159B2 (ja) | 2013-12-17 | 2017-10-04 | 三菱電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5624928A (en) * | 1979-08-09 | 1981-03-10 | Nippon Telegr & Teleph Corp <Ntt> | Electrode forming method of semiconductor |
| DE3011952C2 (de) * | 1980-03-27 | 1982-06-09 | Siemens AG, 1000 Berlin und 8000 München | Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial |
| JPS5932902B2 (ja) * | 1980-06-12 | 1984-08-11 | インターナシヨナルビジネス マシーンズ コーポレーシヨン | 半導体オ−ミツク接点 |
| US4662060A (en) * | 1985-12-13 | 1987-05-05 | Allied Corporation | Method of fabricating semiconductor device having low resistance non-alloyed contact layer |
| US4794444A (en) * | 1986-04-10 | 1988-12-27 | General Electric Company | Ohmic contact and method for making same |
-
1993
- 1993-05-14 JP JP5136708A patent/JPH06326051A/ja active Pending
-
1994
- 1994-05-04 DE DE69415210T patent/DE69415210T2/de not_active Expired - Fee Related
- 1994-05-04 EP EP94106991A patent/EP0625801B1/en not_active Expired - Lifetime
- 1994-05-10 TW TW083104224A patent/TW281779B/zh active
- 1994-05-11 MY MYPI94001183A patent/MY111096A/en unknown
- 1994-05-13 US US08/242,430 patent/US5387549A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| MY111096A (en) | 1999-08-30 |
| DE69415210T2 (de) | 1999-06-24 |
| EP0625801B1 (en) | 1998-12-16 |
| JPH06326051A (ja) | 1994-11-25 |
| US5387549A (en) | 1995-02-07 |
| EP0625801A1 (en) | 1994-11-23 |
| DE69415210D1 (de) | 1999-01-28 |