TW281779B - - Google Patents

Info

Publication number
TW281779B
TW281779B TW083104224A TW83104224A TW281779B TW 281779 B TW281779 B TW 281779B TW 083104224 A TW083104224 A TW 083104224A TW 83104224 A TW83104224 A TW 83104224A TW 281779 B TW281779 B TW 281779B
Authority
TW
Taiwan
Application number
TW083104224A
Other languages
Chinese (zh)
Original Assignee
Sony Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Co Ltd filed Critical Sony Co Ltd
Application granted granted Critical
Publication of TW281779B publication Critical patent/TW281779B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
TW083104224A 1993-05-14 1994-05-10 TW281779B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5136708A JPH06326051A (ja) 1993-05-14 1993-05-14 オーミック電極及びその形成方法

Publications (1)

Publication Number Publication Date
TW281779B true TW281779B (enExample) 1996-07-21

Family

ID=15181636

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104224A TW281779B (enExample) 1993-05-14 1994-05-10

Country Status (6)

Country Link
US (1) US5387549A (enExample)
EP (1) EP0625801B1 (enExample)
JP (1) JPH06326051A (enExample)
DE (1) DE69415210T2 (enExample)
MY (1) MY111096A (enExample)
TW (1) TW281779B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode
US5646069A (en) * 1995-06-07 1997-07-08 Hughes Aircraft Company Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
JPH11274468A (ja) * 1998-03-25 1999-10-08 Sony Corp オーミック電極およびその形成方法ならびにオーミック電極形成用積層体
JP6206159B2 (ja) 2013-12-17 2017-10-04 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624928A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method of semiconductor
DE3011952C2 (de) * 1980-03-27 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
US4662060A (en) * 1985-12-13 1987-05-05 Allied Corporation Method of fabricating semiconductor device having low resistance non-alloyed contact layer
US4794444A (en) * 1986-04-10 1988-12-27 General Electric Company Ohmic contact and method for making same

Also Published As

Publication number Publication date
MY111096A (en) 1999-08-30
DE69415210T2 (de) 1999-06-24
EP0625801B1 (en) 1998-12-16
JPH06326051A (ja) 1994-11-25
US5387549A (en) 1995-02-07
EP0625801A1 (en) 1994-11-23
DE69415210D1 (de) 1999-01-28

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