DE69415210T2 - Verfahren zur Herstellung einer ohmschen Elektrode - Google Patents

Verfahren zur Herstellung einer ohmschen Elektrode

Info

Publication number
DE69415210T2
DE69415210T2 DE69415210T DE69415210T DE69415210T2 DE 69415210 T2 DE69415210 T2 DE 69415210T2 DE 69415210 T DE69415210 T DE 69415210T DE 69415210 T DE69415210 T DE 69415210T DE 69415210 T2 DE69415210 T2 DE 69415210T2
Authority
DE
Germany
Prior art keywords
layer
compound semiconductor
metallic layer
metallic
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69415210T
Other languages
German (de)
English (en)
Other versions
DE69415210D1 (de
Inventor
Toshimasa C/O Sony Corporation Shinagawa-Ku Tokyo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69415210D1 publication Critical patent/DE69415210D1/de
Publication of DE69415210T2 publication Critical patent/DE69415210T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69415210T 1993-05-14 1994-05-04 Verfahren zur Herstellung einer ohmschen Elektrode Expired - Fee Related DE69415210T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5136708A JPH06326051A (ja) 1993-05-14 1993-05-14 オーミック電極及びその形成方法

Publications (2)

Publication Number Publication Date
DE69415210D1 DE69415210D1 (de) 1999-01-28
DE69415210T2 true DE69415210T2 (de) 1999-06-24

Family

ID=15181636

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69415210T Expired - Fee Related DE69415210T2 (de) 1993-05-14 1994-05-04 Verfahren zur Herstellung einer ohmschen Elektrode

Country Status (6)

Country Link
US (1) US5387549A (enExample)
EP (1) EP0625801B1 (enExample)
JP (1) JPH06326051A (enExample)
DE (1) DE69415210T2 (enExample)
MY (1) MY111096A (enExample)
TW (1) TW281779B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode
US5646069A (en) * 1995-06-07 1997-07-08 Hughes Aircraft Company Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
JPH11274468A (ja) * 1998-03-25 1999-10-08 Sony Corp オーミック電極およびその形成方法ならびにオーミック電極形成用積層体
JP6206159B2 (ja) 2013-12-17 2017-10-04 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624928A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method of semiconductor
DE3011952C2 (de) * 1980-03-27 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
US4662060A (en) * 1985-12-13 1987-05-05 Allied Corporation Method of fabricating semiconductor device having low resistance non-alloyed contact layer
US4794444A (en) * 1986-04-10 1988-12-27 General Electric Company Ohmic contact and method for making same

Also Published As

Publication number Publication date
MY111096A (en) 1999-08-30
EP0625801B1 (en) 1998-12-16
JPH06326051A (ja) 1994-11-25
US5387549A (en) 1995-02-07
EP0625801A1 (en) 1994-11-23
DE69415210D1 (de) 1999-01-28
TW281779B (enExample) 1996-07-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee