MY111096A - Ohmic electrode and process for fabricating the same - Google Patents

Ohmic electrode and process for fabricating the same

Info

Publication number
MY111096A
MY111096A MYPI94001183A MYPI19941183A MY111096A MY 111096 A MY111096 A MY 111096A MY PI94001183 A MYPI94001183 A MY PI94001183A MY PI19941183 A MYPI19941183 A MY PI19941183A MY 111096 A MY111096 A MY 111096A
Authority
MY
Malaysia
Prior art keywords
metallic layer
fabricating
same
ohmic electrode
forming
Prior art date
Application number
MYPI94001183A
Other languages
English (en)
Inventor
Kobayashi Toshimasa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of MY111096A publication Critical patent/MY111096A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
MYPI94001183A 1993-05-14 1994-05-11 Ohmic electrode and process for fabricating the same MY111096A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5136708A JPH06326051A (ja) 1993-05-14 1993-05-14 オーミック電極及びその形成方法

Publications (1)

Publication Number Publication Date
MY111096A true MY111096A (en) 1999-08-30

Family

ID=15181636

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI94001183A MY111096A (en) 1993-05-14 1994-05-11 Ohmic electrode and process for fabricating the same

Country Status (6)

Country Link
US (1) US5387549A (enExample)
EP (1) EP0625801B1 (enExample)
JP (1) JPH06326051A (enExample)
DE (1) DE69415210T2 (enExample)
MY (1) MY111096A (enExample)
TW (1) TW281779B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode
US5646069A (en) * 1995-06-07 1997-07-08 Hughes Aircraft Company Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
JPH11274468A (ja) * 1998-03-25 1999-10-08 Sony Corp オーミック電極およびその形成方法ならびにオーミック電極形成用積層体
JP6206159B2 (ja) 2013-12-17 2017-10-04 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624928A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method of semiconductor
DE3011952C2 (de) * 1980-03-27 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
US4662060A (en) * 1985-12-13 1987-05-05 Allied Corporation Method of fabricating semiconductor device having low resistance non-alloyed contact layer
US4794444A (en) * 1986-04-10 1988-12-27 General Electric Company Ohmic contact and method for making same

Also Published As

Publication number Publication date
DE69415210T2 (de) 1999-06-24
EP0625801B1 (en) 1998-12-16
JPH06326051A (ja) 1994-11-25
US5387549A (en) 1995-02-07
EP0625801A1 (en) 1994-11-23
DE69415210D1 (de) 1999-01-28
TW281779B (enExample) 1996-07-21

Similar Documents

Publication Publication Date Title
EP0337064A3 (en) Alloy layer and metallurgy structure for establishing electrical contact
EP0085332A3 (de) Metallisierte Halbleiter und Verfahren zu ihrer Herstellung
EP1450415A3 (en) Gallium nitride-based III-V group compound semiconductor device
TW344892B (en) Method of forming a semiconductor metallization system and structure therefor
AU4399297A (en) Reconstituted human anti-hm1.24 antibody
CA2051556A1 (en) Gas sensor
EP0834929A3 (en) Ohmic contact to n-GaN related compound semiconductor and its manufacturing method
DE3681112D1 (de) Plasmaaetzverfahren zur herstellung von metall-halbleiter-kontakte des ohmischen typs.
CA2215338A1 (en) Lean, high conductivity, relaxation-resistant beryllium-nickel-copper alloys
MY111096A (en) Ohmic electrode and process for fabricating the same
DE3872373D1 (de) Metall extraktion verfahren.
ES2174067T3 (es) Procedimiento de fabricacion de componentes a base de una pelicula metalica.
EP0376730A3 (en) Method of fabricating titanium-aluminum shapes
JPS51126050A (en) Semi-conductor equipment
JPS52100979A (en) Production and drive of dual gate schottky barrier gate type fieled ef fect transistor
EP0793016A3 (en) Electrode for preventing noise electric wave and method thereof
TW375809B (en) Method to produce a conductive connection between at least two areas of a first conductive type
IT1175541B (it) Procedimento per la connessione a terra di dispositivi planari e circuiti integrati e prodotti cosi&#39; ottenuti
JPS6489527A (en) Schottky diode
AU565081B2 (en) Semiconductor device producing or amplifying radiation
EP0396276A3 (en) Method of manufacturing semiconductor device
JPS5323270A (en) Formation method of schottky diode electrodes
JPS5394873A (en) Manufacture of ohmic contact electrode
JPS56103466A (en) Thyristor
TW274632B (en) A method to avoid the resistance of complex-crystalline silicon variable on fabricating